Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583139
H. Ji, Minggang Li, Mingyu Li
The wide band-gap semiconductor devices, such as SiC, GaAs power devices, provide great opportunities to develop power electronic systems with increased power densities, high reliability in extreme environments and higher integration density. High-temperature resistance is needed for the thermal interface materials. In this work, the intermetallic joints consisted of nearly sole Ni3Sn4 during die bonding for high temperature applications were achieved with Sn-24 wt.%Ni by pressureless ultrasonic-assisted soldering in air for 10 s. This high re-melting temperature joint possessed high shear strength of 43.4 MPa and good microstructural stability as isothermally aged at 300 °C for 72 h in air. After aging, the IMCs phase did not change and the shear strength dropped (33.4 MPa) due to the Ni3Sn4 grains coarsening. These results demonstrate that the less time-consuming ultrasonic-assisted soldering has shown its potential for high temperature power electronic packaging.
{"title":"Ultrasonic-assisted soldering of Sn/Ni composite solder during die bonding for high-temperature application","authors":"H. Ji, Minggang Li, Mingyu Li","doi":"10.1109/ICEPT.2016.7583139","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583139","url":null,"abstract":"The wide band-gap semiconductor devices, such as SiC, GaAs power devices, provide great opportunities to develop power electronic systems with increased power densities, high reliability in extreme environments and higher integration density. High-temperature resistance is needed for the thermal interface materials. In this work, the intermetallic joints consisted of nearly sole Ni3Sn4 during die bonding for high temperature applications were achieved with Sn-24 wt.%Ni by pressureless ultrasonic-assisted soldering in air for 10 s. This high re-melting temperature joint possessed high shear strength of 43.4 MPa and good microstructural stability as isothermally aged at 300 °C for 72 h in air. After aging, the IMCs phase did not change and the shear strength dropped (33.4 MPa) due to the Ni3Sn4 grains coarsening. These results demonstrate that the less time-consuming ultrasonic-assisted soldering has shown its potential for high temperature power electronic packaging.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"40 1","pages":"295-300"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82277846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583304
Li Peng, Y. Ni, Ziqi Li
The EU ErP Directive set up the framework requirements for entire life cycle of ecological design of energy-related products. This paper studied the ecological evaluation technology of air conditioning, considered environmental impact on each stage of life cycle of the product from design, manufacturing, transportation, disposal. Ecological design special software was used for quantitative analysis of air conditioning products. The study draws a conclusion: the use stage of air conditioning is the core stage of environmental impact, environmental impact in manufacturing stage, sales stage, and the end of life (EOL) stage is very small; in the main components of the product, two assembly (evaporator assembly and the condenser assembly) cause the strongest effect on the environment. The product energy efficiency significantly improved after technical improvement.
{"title":"Research and analysis on ecological evaluation technology of air conditioner","authors":"Li Peng, Y. Ni, Ziqi Li","doi":"10.1109/ICEPT.2016.7583304","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583304","url":null,"abstract":"The EU ErP Directive set up the framework requirements for entire life cycle of ecological design of energy-related products. This paper studied the ecological evaluation technology of air conditioning, considered environmental impact on each stage of life cycle of the product from design, manufacturing, transportation, disposal. Ecological design special software was used for quantitative analysis of air conditioning products. The study draws a conclusion: the use stage of air conditioning is the core stage of environmental impact, environmental impact in manufacturing stage, sales stage, and the end of life (EOL) stage is very small; in the main components of the product, two assembly (evaporator assembly and the condenser assembly) cause the strongest effect on the environment. The product energy efficiency significantly improved after technical improvement.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"13 1","pages":"1037-1040"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84090368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583185
W. Feng, Fanny Zhao, Brian Shieh, S. W. R. Lee
A novel method for the evaluation of thermal conductivity of paste materials is proposed in this paper. The principle is based on the measurement of the thermal conductivity of composite materials together with finite element modeling (FEM). In the present study, the FEM based on the structure and working principle of an apparatus (THISYS) used for measuring the thermal conductivity of thin and solid samples was developed. Three types of paste materials were investigated. From detailed comparisons, it could be concluded that the accuracy of this method is more than 95%. Consequently, the proposed method was validated.
{"title":"A method for measuring thermal conductivity of paste materials","authors":"W. Feng, Fanny Zhao, Brian Shieh, S. W. R. Lee","doi":"10.1109/ICEPT.2016.7583185","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583185","url":null,"abstract":"A novel method for the evaluation of thermal conductivity of paste materials is proposed in this paper. The principle is based on the measurement of the thermal conductivity of composite materials together with finite element modeling (FEM). In the present study, the FEM based on the structure and working principle of an apparatus (THISYS) used for measuring the thermal conductivity of thin and solid samples was developed. Three types of paste materials were investigated. From detailed comparisons, it could be concluded that the accuracy of this method is more than 95%. Consequently, the proposed method was validated.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"45 1","pages":"510-513"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80174939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583398
Xueke Wang, S. Bao, Yongda Hu, Qiang Li, Libo Ai
X-ray fluorescence analyze, the milliohm meter and X-ray energy dispersive spectrometer were used to investigate the impurities and electric resistance of the copper wire. By the polishing and corrosion testing, the different grain sizes were observed by scanning electron microscopy. The impurities can effect on the hardness and electrical conductivity of the copper wire. The grain size also affects the hardness and plasticity. Consequently, the difference in impurities and grain sizes lead to the different welding performance.
{"title":"Effects of impurities and grain size on welding performance of T3 copper","authors":"Xueke Wang, S. Bao, Yongda Hu, Qiang Li, Libo Ai","doi":"10.1109/ICEPT.2016.7583398","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583398","url":null,"abstract":"X-ray fluorescence analyze, the milliohm meter and X-ray energy dispersive spectrometer were used to investigate the impurities and electric resistance of the copper wire. By the polishing and corrosion testing, the different grain sizes were observed by scanning electron microscopy. The impurities can effect on the hardness and electrical conductivity of the copper wire. The grain size also affects the hardness and plasticity. Consequently, the difference in impurities and grain sizes lead to the different welding performance.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"25 1","pages":"1454-1460"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80507326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583283
Qiang Li, S. Bao, Yingli Liu, Yongda Hu, Y. Jing, Jie Li, Libo Ai, Xueke Wang
Bi1-xLixFeO3 (x=0, 0.05, 0.10, 0.15) ceramics were synthesized by conventional solid-sate reaction method. The effect of Li1+ doping on phase structure, morphological and impedance properties of Bi1-xLixFeO3 ceramics was performed. DSC studied the synthesis process of pure BiFeO3 sample and confirmed synthesis temperature was about 825 °C. X-ray diffraction dates showed that Bi1-xLixFeO3 were stabilized in perovskite structure. The SEM images of all the samples showed grains with almost spherical morphology. The effects of Li1+ doping on magnetic and dielectric permeability of Bi1-xLixFeO3 ceramics was studied over the frequency range of 1 MHz-3.0 GHz. Li1+ ions doping improved magnetic and dielectric properties due to the cycloid spins were distorted by adding Li instead of Bi ions. With Li1+ ions increasing, dielectric constant kept a stable value, while dielectric loss kept a low value for all the samples.
{"title":"Influence of Li-doping on phase structure and magneto-dielectric behaviors in BiFeO3","authors":"Qiang Li, S. Bao, Yingli Liu, Yongda Hu, Y. Jing, Jie Li, Libo Ai, Xueke Wang","doi":"10.1109/ICEPT.2016.7583283","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583283","url":null,"abstract":"Bi<sub>1-x</sub>Li<sub>x</sub>FeO<sub>3</sub> (x=0, 0.05, 0.10, 0.15) ceramics were synthesized by conventional solid-sate reaction method. The effect of Li<sup>1+</sup> doping on phase structure, morphological and impedance properties of Bi<sub>1-x</sub>Li<sub>x</sub>FeO<sub>3</sub> ceramics was performed. DSC studied the synthesis process of pure BiFeO<sub>3</sub> sample and confirmed synthesis temperature was about 825 °C. X-ray diffraction dates showed that Bi<sub>1-x</sub>Li<sub>x</sub>FeO<sub>3</sub> were stabilized in perovskite structure. The SEM images of all the samples showed grains with almost spherical morphology. The effects of Li<sup>1+</sup> doping on magnetic and dielectric permeability of Bi<sub>1-x</sub>Li<sub>x</sub>FeO<sub>3</sub> ceramics was studied over the frequency range of 1 MHz-3.0 GHz. Li<sup>1+</sup> ions doping improved magnetic and dielectric properties due to the cycloid spins were distorted by adding Li instead of Bi ions. With Li<sup>1+</sup> ions increasing, dielectric constant kept a stable value, while dielectric loss kept a low value for all the samples.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"60 1","pages":"938-942"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80569377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583100
Zhiqiang Nie, Yao Lu, Dihai Wu, Shuna Wang, Pu Zhang, Lingling Xiong, Xiaoning Li, Zenan Shen, Dihai Wu
The reliability is the important performance of high power semiconductor laser. Thermally accelerated ageing test is an important technology of lifetime evaluation and reliability analysis. In this study, three groups of thermally accelerated ageing tests of conduction-cooled-packaged 60W 808nm high power diode laser arrays packaged by Indium solder at constant current have been carried out. Analysis of ageing data suggest the extrapolated lifetime under room temperature to value device reliability. We also analyze and discuss the degradation modes. This work can provide guidance for optimizing the chip and package structure, is helpful for improving performance and enhancing reliability of high power semiconductor lasers.
{"title":"Thermally accelerated ageing test of 808nm high power diode laser arrays in CW mode","authors":"Zhiqiang Nie, Yao Lu, Dihai Wu, Shuna Wang, Pu Zhang, Lingling Xiong, Xiaoning Li, Zenan Shen, Dihai Wu","doi":"10.1109/ICEPT.2016.7583100","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583100","url":null,"abstract":"The reliability is the important performance of high power semiconductor laser. Thermally accelerated ageing test is an important technology of lifetime evaluation and reliability analysis. In this study, three groups of thermally accelerated ageing tests of conduction-cooled-packaged 60W 808nm high power diode laser arrays packaged by Indium solder at constant current have been carried out. Analysis of ageing data suggest the extrapolated lifetime under room temperature to value device reliability. We also analyze and discuss the degradation modes. This work can provide guidance for optimizing the chip and package structure, is helpful for improving performance and enhancing reliability of high power semiconductor lasers.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"50 1","pages":"111-115"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83275301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583312
Pei Chen, Tian Pan, Jinglong Sun, F. Qin
Backside grinding is the most commonly used technique in silicon wafer thinning. The grinding damage may cause degradation of mechanical property and induce residual stress. In this paper, bugle test is proposed to apply to ground wafer. Before the experimental work starts, the theoretical model needs to be built. A numerical model is also adopted to verify the applicability of the theoretical model, and the results turns out the theoretical model only works for films with thickness to radius (t/r) larger than 1/20. With the existence of residual stress, the accuracy needs to be improved by modifying the theoretical model or introducing new iterative algorism.
{"title":"Theoretical and numerical study on bulge testing of ground wafer to characterize mechanical properties and residual stress","authors":"Pei Chen, Tian Pan, Jinglong Sun, F. Qin","doi":"10.1109/ICEPT.2016.7583312","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583312","url":null,"abstract":"Backside grinding is the most commonly used technique in silicon wafer thinning. The grinding damage may cause degradation of mechanical property and induce residual stress. In this paper, bugle test is proposed to apply to ground wafer. Before the experimental work starts, the theoretical model needs to be built. A numerical model is also adopted to verify the applicability of the theoretical model, and the results turns out the theoretical model only works for films with thickness to radius (t/r) larger than 1/20. With the existence of residual stress, the accuracy needs to be improved by modifying the theoretical model or introducing new iterative algorism.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"86 1","pages":"1075-1078"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81197458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583086
Yang Liu, Yanhong Tian, Baolei Liu, Jikai Xu, Jiayun Feng, Chenxi Wang
Because of the complicated configuration in MEMS devices, significant technical challenges are presented for the interconnection of dissimilar materials. Since tin soldering is an effective method for joining dissimilar materials, there are still some reliability problems in later service process, such as remelting of Sn solder, excessive microstructure evolution. In the present work, a parallel gap resistance microwelding method was developed for forming reliable Cu wire/Au plating interconnection. In an attempt to avoid fragile electronic components, an ohmic contact tip onto the electrodes was utilized. Experimental results revealed that solid state welding was obtained with a relatively electric current intensity within 20 ms. No weld nugget was generated at the Cu/Au interface. The joule heat-induced temperature affected microstructures as well as mechanical properties of the joints, mainly depending on three parameters (welding voltage, welding time and electrode force). The maximum joint breaking force was 24 g with the welding voltage of 0.5 V for 16 ms and under the pressure of 0.56 N. The ANSYS simulation results indicated that the weld geometry changed with welding time.
{"title":"Interconnection of Cu wire/Au plating pads using parallel gap resistance microwelding process","authors":"Yang Liu, Yanhong Tian, Baolei Liu, Jikai Xu, Jiayun Feng, Chenxi Wang","doi":"10.1109/ICEPT.2016.7583086","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583086","url":null,"abstract":"Because of the complicated configuration in MEMS devices, significant technical challenges are presented for the interconnection of dissimilar materials. Since tin soldering is an effective method for joining dissimilar materials, there are still some reliability problems in later service process, such as remelting of Sn solder, excessive microstructure evolution. In the present work, a parallel gap resistance microwelding method was developed for forming reliable Cu wire/Au plating interconnection. In an attempt to avoid fragile electronic components, an ohmic contact tip onto the electrodes was utilized. Experimental results revealed that solid state welding was obtained with a relatively electric current intensity within 20 ms. No weld nugget was generated at the Cu/Au interface. The joule heat-induced temperature affected microstructures as well as mechanical properties of the joints, mainly depending on three parameters (welding voltage, welding time and electrode force). The maximum joint breaking force was 24 g with the welding voltage of 0.5 V for 16 ms and under the pressure of 0.56 N. The ANSYS simulation results indicated that the weld geometry changed with welding time.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"15 1","pages":"43-46"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82228164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583166
Xinxin Lin, F. Zhu, Liping He, Yongjun Pan, Jiaquan Tao, K. Duan
Three-dimensional integrated circuit as an extension of the conventional two dimensional processes is viewed as the best choice to continue Moore's law. The extreme miniaturization of size and the complication combination of structure of 3-D integrated circuit make a higher request to the relevant technologies including wafer thinning. Be living in the process of finding the new principle of wafer thinning, a deeper understanding of the existing theory is absolutely necessary.
{"title":"Subsurface damage mechanism of wafer thinning process revealed by molecular dynamics simulation","authors":"Xinxin Lin, F. Zhu, Liping He, Yongjun Pan, Jiaquan Tao, K. Duan","doi":"10.1109/ICEPT.2016.7583166","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583166","url":null,"abstract":"Three-dimensional integrated circuit as an extension of the conventional two dimensional processes is viewed as the best choice to continue Moore's law. The extreme miniaturization of size and the complication combination of structure of 3-D integrated circuit make a higher request to the relevant technologies including wafer thinning. Be living in the process of finding the new principle of wafer thinning, a deeper understanding of the existing theory is absolutely necessary.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"35 1","pages":"417-420"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89326117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583162
Bingfeng Guo, Chengrong Jiang, Anil Kunwar, N. Zhao, Haitao Ma
The morphology evolution of Cu6Sn5 intermetallic Compound (IMC) in cooling stage were studied. The IMC morphology is scallop-like with small plane observated by synchrotron radiation real-time imaging and high pressure air removing excess liquid solder cooling. But, the IMC morphology observated is prismatic with facet of interior portion and at exterior portion is scallop-like with small plane under air cooling and the cooling stage of synchrotron radiation real-time imaging condition. From that, it can be noted that the morphology evolution of IMC in the solder joint was greatly affected by the cooling phase of interfacial reaction, and IMC morphology partition phenomenon was found. With rise of the solder temperature, the thickness of IMC grows rapidly. At the same time, the thickness of the IMC in the inner region of the spherical solder joint reaches to 7.7245 μm, while the thickness of the IMC at the edge only reaches to 4.556 μm. In the analysis, the growth behavior of interface IMC in cooling stage is affected by copper precipitation in the solder. The precipitation of copper in the solder provides the necessary elements for the rapid growth of IMC in the cooling stage, resulting the IMC morphology transition during the cooling phase.
{"title":"In situ study of real-time growth behavior of IMC morphology evolution during the Sn/Cu soldering cooling stage","authors":"Bingfeng Guo, Chengrong Jiang, Anil Kunwar, N. Zhao, Haitao Ma","doi":"10.1109/ICEPT.2016.7583162","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583162","url":null,"abstract":"The morphology evolution of Cu6Sn5 intermetallic Compound (IMC) in cooling stage were studied. The IMC morphology is scallop-like with small plane observated by synchrotron radiation real-time imaging and high pressure air removing excess liquid solder cooling. But, the IMC morphology observated is prismatic with facet of interior portion and at exterior portion is scallop-like with small plane under air cooling and the cooling stage of synchrotron radiation real-time imaging condition. From that, it can be noted that the morphology evolution of IMC in the solder joint was greatly affected by the cooling phase of interfacial reaction, and IMC morphology partition phenomenon was found. With rise of the solder temperature, the thickness of IMC grows rapidly. At the same time, the thickness of the IMC in the inner region of the spherical solder joint reaches to 7.7245 μm, while the thickness of the IMC at the edge only reaches to 4.556 μm. In the analysis, the growth behavior of interface IMC in cooling stage is affected by copper precipitation in the solder. The precipitation of copper in the solder provides the necessary elements for the rapid growth of IMC in the cooling stage, resulting the IMC morphology transition during the cooling phase.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"395-399"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86706998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：