Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583216
Yuezhu Mo, D. Yang, M. Cai, Dongjing Liu, Y. Nie
From the perspective of the irreversible energy loss of the second law of thermodynamics, that is entropy generation, theoretical analysis on the influence of delamination appeared at the die attach (DA) layer on the chip junction temperature of high power LED-COB package is carried out. First, thermal simulation of chip-on-board LED package with different position of interface delamination is investigated. The results show that delamination occurs at the edge position is more harmful for blocking heat transfer in the overall LED package than that of the center position. Second, entropy generation of edge position and center position in die attach layer with non-delamination is calculated. In the same conditions, the entropy generation value of the edge position is larger than that of the center position, that is, compared to center position, the larger irreversible heat flux loss in the edge position of die attach in the heat conduction process is higher.
{"title":"Thermal transfer influence of delamination in the die attach layer of chip-on-board LED package base on entropy generation analysis","authors":"Yuezhu Mo, D. Yang, M. Cai, Dongjing Liu, Y. Nie","doi":"10.1109/ICEPT.2016.7583216","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583216","url":null,"abstract":"From the perspective of the irreversible energy loss of the second law of thermodynamics, that is entropy generation, theoretical analysis on the influence of delamination appeared at the die attach (DA) layer on the chip junction temperature of high power LED-COB package is carried out. First, thermal simulation of chip-on-board LED package with different position of interface delamination is investigated. The results show that delamination occurs at the edge position is more harmful for blocking heat transfer in the overall LED package than that of the center position. Second, entropy generation of edge position and center position in die attach layer with non-delamination is calculated. In the same conditions, the entropy generation value of the edge position is larger than that of the center position, that is, compared to center position, the larger irreversible heat flux loss in the edge position of die attach in the heat conduction process is higher.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"13 1","pages":"646-651"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75937991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583103
Bo Wang, Q. Ma, Liang Tang, Taoming Chen
In this paper, the potential influencing factors of BGA, such as shape, center distance and misalignment, were investigated and analyzed in the bands from DC to 20GHz by HFSS. In the model, two coplanar waveguide (CW) lines were connected by a half coaxial configuration which formed by five BGA balls. After the simulation, it was found that the transmission performance is significantly influenced by the BGA shape and the center distance between RF BGA and GND BGA. A cylinder-type BGA leads to the best transmission performance. Meanwhile, the simulation result also shows that the decentralization of RF BGA and the height of drum-type BGA are weak influencing factors.
{"title":"Simulation research of the BGA configuration on the RF transmission performance","authors":"Bo Wang, Q. Ma, Liang Tang, Taoming Chen","doi":"10.1109/ICEPT.2016.7583103","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583103","url":null,"abstract":"In this paper, the potential influencing factors of BGA, such as shape, center distance and misalignment, were investigated and analyzed in the bands from DC to 20GHz by HFSS. In the model, two coplanar waveguide (CW) lines were connected by a half coaxial configuration which formed by five BGA balls. After the simulation, it was found that the transmission performance is significantly influenced by the BGA shape and the center distance between RF BGA and GND BGA. A cylinder-type BGA leads to the best transmission performance. Meanwhile, the simulation result also shows that the decentralization of RF BGA and the height of drum-type BGA are weak influencing factors.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"32 1","pages":"125-127"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73157176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583259
Ye Lezhi, W. Zhiyue, Wang Jiapeng, Zhou Qizhou
The flip chip package is an advanced chip interconnection technology, which has become a main technology of high density package. This paper mainly studies the influence of bumps deformation in the flip chip bonding process on connection reliability, which provides theoretical reference for the flip bonding process. Bumps deformation is a key factor for the chip reliable connection in the flip chip bonding. Bonding force directly determines the bumps deformation. The quality of the bumps will affect the reliability of reflow soldering and under-fill processes. This paper builds a three-dimensional model of flip chip bonding. By the FEM simulation analysis, the relationship between bonding force and bumps deformation is studied. The process parameters are optimized by comparing the experimental data with simulation result. Finally, the reliability evaluation method of flip chip bonding is obtained, which can be used to guide the research and development of the bonding equipment.
{"title":"Study on bumps deformation of flip chip bonding process","authors":"Ye Lezhi, W. Zhiyue, Wang Jiapeng, Zhou Qizhou","doi":"10.1109/ICEPT.2016.7583259","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583259","url":null,"abstract":"The flip chip package is an advanced chip interconnection technology, which has become a main technology of high density package. This paper mainly studies the influence of bumps deformation in the flip chip bonding process on connection reliability, which provides theoretical reference for the flip bonding process. Bumps deformation is a key factor for the chip reliable connection in the flip chip bonding. Bonding force directly determines the bumps deformation. The quality of the bumps will affect the reliability of reflow soldering and under-fill processes. This paper builds a three-dimensional model of flip chip bonding. By the FEM simulation analysis, the relationship between bonding force and bumps deformation is studied. The process parameters are optimized by comparing the experimental data with simulation result. Finally, the reliability evaluation method of flip chip bonding is obtained, which can be used to guide the research and development of the bonding equipment.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"27 1","pages":"832-835"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73592013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583188
Yan Qiu, Mingliang L. Huang, A. Wu
The L-S electromigration (EM)-induced failure mechanism of Sn-3.0Ag-0.5Cu (SAC305) BGA solder balls was investigated. It is confirmed that temperature was becoming the most crucial factor to dominate the EM behavior. The high operation temperature caused the melting of the BGA solder balls in both the Cu/SAC305/Cu interconnects on PCB side and the Cu/SAC305/Ni interconnects on chip side. For the Cu/SAC305/Cu interconnects, an significant EM flux was induced under which the cathode Cu was excessively dissolved and a thick Cu-Sn IMC layer formed on the anode interface. For the Cu/SAC305/Ni interconnects, both Cu and Ni atoms could arrive to the opposite interface under concentration gradient and EM, resulting in the formation of Cu-Ni-Sn IMCs at both interfaces. However, the Ni UBM effectively inhibited the cathode consumption compared with the Cu UBM. The EM resistance of the Cu/SAC305/Ni interconnects is superior to that of the Cu/SAC305/Cu interconnects.
研究了Sn-3.0Ag-0.5Cu (SAC305) BGA焊料球的L-S电迁移失效机理。结果表明，温度正逐渐成为决定电磁行为的最关键因素。高工作温度导致PCB侧Cu/SAC305/Cu互连和芯片侧Cu/SAC305/Ni互连中的BGA焊点球熔化。在Cu/SAC305/Cu互连中，阴极Cu被过度溶解，阳极界面形成较厚的Cu- sn IMC层。对于Cu/SAC305/Ni互连，在浓度梯度和EM作用下，Cu和Ni原子都可以到达相反的界面，在两个界面上形成Cu-Ni- sn IMCs。然而，与Cu复合材料相比，Ni复合材料有效地抑制了阴极消耗。Cu/SAC305/Ni复合材料的耐电磁性能优于Cu/SAC305/Cu复合材料。
{"title":"Study on the electromigration-induced failure mechanism of Sn-3.0Ag-0.5Cu BGA solder balls","authors":"Yan Qiu, Mingliang L. Huang, A. Wu","doi":"10.1109/ICEPT.2016.7583188","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583188","url":null,"abstract":"The L-S electromigration (EM)-induced failure mechanism of Sn-3.0Ag-0.5Cu (SAC305) BGA solder balls was investigated. It is confirmed that temperature was becoming the most crucial factor to dominate the EM behavior. The high operation temperature caused the melting of the BGA solder balls in both the Cu/SAC305/Cu interconnects on PCB side and the Cu/SAC305/Ni interconnects on chip side. For the Cu/SAC305/Cu interconnects, an significant EM flux was induced under which the cathode Cu was excessively dissolved and a thick Cu-Sn IMC layer formed on the anode interface. For the Cu/SAC305/Ni interconnects, both Cu and Ni atoms could arrive to the opposite interface under concentration gradient and EM, resulting in the formation of Cu-Ni-Sn IMCs at both interfaces. However, the Ni UBM effectively inhibited the cathode consumption compared with the Cu UBM. The EM resistance of the Cu/SAC305/Ni interconnects is superior to that of the Cu/SAC305/Cu interconnects.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"44 1","pages":"524-527"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74007223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583303
Yanming Xia, Kuili Ren, Shengli Ma, Y. Guan, Han Cai, Rongfeng Luo, Jun Yan, J. Chen, Yufeng Jin
In this paper, a novel petaloid hollow Cu interconnection for interposer is presented, its stress can be released by free ends face to hollow Cu interconnection center, and its fabrication process for Si substrate and glass substrate are also presented. Stress distribution and Max. stress of interposer with petaloid hollow Cu interconnection comparison with normal TSV is simulated and analyzed by thermal-mechanical model. Typical electrical path composed of petaloid hollow Cu interconnection is modeled, coupling influences of structure changing and thermal vibration on its electrical property is analyzed.
{"title":"Design and characterization of petaloid hollow Cu interconnection for interposer","authors":"Yanming Xia, Kuili Ren, Shengli Ma, Y. Guan, Han Cai, Rongfeng Luo, Jun Yan, J. Chen, Yufeng Jin","doi":"10.1109/ICEPT.2016.7583303","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583303","url":null,"abstract":"In this paper, a novel petaloid hollow Cu interconnection for interposer is presented, its stress can be released by free ends face to hollow Cu interconnection center, and its fabrication process for Si substrate and glass substrate are also presented. Stress distribution and Max. stress of interposer with petaloid hollow Cu interconnection comparison with normal TSV is simulated and analyzed by thermal-mechanical model. Typical electrical path composed of petaloid hollow Cu interconnection is modeled, coupling influences of structure changing and thermal vibration on its electrical property is analyzed.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"52 1","pages":"1033-1036"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85329314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583306
Li Rao, Fengtian Hu, Penghui Xu, A. Hu, Liming Gao, Ming Li, Wen Zhao
Copper pillar bump interconnect technology, with its good electrical properties and electromigration resistance, is becoming the next key technology for fine pitch interconnection of chips. The study of the effect of copper pillar bump size on the interfacial diffusion reaction has directive significance to the application of copper pillar bump. This paper focuses on the effect of size on the reliability of copper pillar bump. We use the multi-layer electroplating method to prepare Cu/Sn/Ni copper pillar bump sandwich structure with different diameters of Φ20μm and Φ100μm. We find that the reduction of bump size will promote the growth of interfacial intermetallic compound (IMC). A void growth model in the copper pillar bump is explored by investigating Kirkendall voids and the growth of IMC in Φ20μm Cu/20μmSn/Ni copper pillar bumps.
{"title":"Research on the interfacial reaction and mechanism of Cu/Sn/Ni copper pillar bump","authors":"Li Rao, Fengtian Hu, Penghui Xu, A. Hu, Liming Gao, Ming Li, Wen Zhao","doi":"10.1109/ICEPT.2016.7583306","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583306","url":null,"abstract":"Copper pillar bump interconnect technology, with its good electrical properties and electromigration resistance, is becoming the next key technology for fine pitch interconnection of chips. The study of the effect of copper pillar bump size on the interfacial diffusion reaction has directive significance to the application of copper pillar bump. This paper focuses on the effect of size on the reliability of copper pillar bump. We use the multi-layer electroplating method to prepare Cu/Sn/Ni copper pillar bump sandwich structure with different diameters of Φ20μm and Φ100μm. We find that the reduction of bump size will promote the growth of interfacial intermetallic compound (IMC). A void growth model in the copper pillar bump is explored by investigating Kirkendall voids and the growth of IMC in Φ20μm Cu/20μmSn/Ni copper pillar bumps.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"9 1","pages":"1045-1050"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81932974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583159
Chuan Luo, Yongda Hu, S. Bao, Yongqiang Cui
In order to finding the reason why there is no output signal when the voltage signals inputted during the voltage stabilizing circuit module works, Scanning electron microscope and energy disperse spectroscopy were used to detecting the surface morphology and the internal composition. The analysis results show that it is the cold solder in the wire bonding caused by the inappropriate mounting depression that lead to the failure of this product, besides, Solder balls can be easily found in this circuit, Which would potential threat to it's stability. we could decrease the amount of the solder ball from the quality of solder and the condition of reflow.
{"title":"One failure analysis of voltage stabilizing circuit","authors":"Chuan Luo, Yongda Hu, S. Bao, Yongqiang Cui","doi":"10.1109/ICEPT.2016.7583159","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583159","url":null,"abstract":"In order to finding the reason why there is no output signal when the voltage signals inputted during the voltage stabilizing circuit module works, Scanning electron microscope and energy disperse spectroscopy were used to detecting the surface morphology and the internal composition. The analysis results show that it is the cold solder in the wire bonding caused by the inappropriate mounting depression that lead to the failure of this product, besides, Solder balls can be easily found in this circuit, Which would potential threat to it's stability. we could decrease the amount of the solder ball from the quality of solder and the condition of reflow.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"29 1","pages":"384-386"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84375549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583299
Zhou Wei, Z. Zhen, Chunqing Wang
Silver nano-particles (Ag NPs) Pastes has been attracted attention in recent years, and had achieved great success, such as sintered at low temperature and got high shear strength. However, few people pay attention to the substrate nanocrystallization, herein, with the method of wet etching, we got nanostructure substrate of single crystal copper. Following, measured the wetting angle (H2O) and sintered with Ag NPs. The nanostructure and sintered result were observed by Atomic Force Microscope (AFM), scanning electron microscope (SEM) and EDX respectively. The results show that the wetting angle of Cu nanostructure substrate become larger which caused by the higher surface energy of the nanostructure. Besides, at 250°C, the Cu substrate diffused into the silver layer, much lower than the traditional diffusion temperature, which also may be explained by the nano-effect. All the result show that the nanostructure substrate make contribution to the nano-joining.
{"title":"Single crystal copper nanocrystallization and sintered with silver nanoparticles","authors":"Zhou Wei, Z. Zhen, Chunqing Wang","doi":"10.1109/ICEPT.2016.7583299","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583299","url":null,"abstract":"Silver nano-particles (Ag NPs) Pastes has been attracted attention in recent years, and had achieved great success, such as sintered at low temperature and got high shear strength. However, few people pay attention to the substrate nanocrystallization, herein, with the method of wet etching, we got nanostructure substrate of single crystal copper. Following, measured the wetting angle (H2O) and sintered with Ag NPs. The nanostructure and sintered result were observed by Atomic Force Microscope (AFM), scanning electron microscope (SEM) and EDX respectively. The results show that the wetting angle of Cu nanostructure substrate become larger which caused by the higher surface energy of the nanostructure. Besides, at 250°C, the Cu substrate diffused into the silver layer, much lower than the traditional diffusion temperature, which also may be explained by the nano-effect. All the result show that the nanostructure substrate make contribution to the nano-joining.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"42 1","pages":"1015-1017"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84522782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583383
C. H. Chu, Y. T. Lin, W. Hsu, C. T. Chang, P. S. Kuo, Y. Hsieh
Recently, lots R&D efforts are put on the 2.5D and 3D IC to make package smaller, thinner and with enhanced performance and functions. The complexity of the packaging structure makes the failure analysis a difficulty. When chip function is recovered back after decapsulation of the package. Technique and tools are required to catch the failure site before opening the package. In order to detailed investigate the root cause at packaging level, new tools with higher resolution and penetration capability are required to non-destructively tackle the failure. By utilizing TDR, 3D X-ray microscope and lock-in thermal emission microscope, failure site resulted from package process can be clearly revealed and the root cause can be identified by following physical failure analysis such as cross sectional FIB, SEM and TEM. Examples of failure cases will be discussed in this paper.
{"title":"Applying novel non-destructive failure analysis techniques on the package related failures","authors":"C. H. Chu, Y. T. Lin, W. Hsu, C. T. Chang, P. S. Kuo, Y. Hsieh","doi":"10.1109/ICEPT.2016.7583383","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583383","url":null,"abstract":"Recently, lots R&D efforts are put on the 2.5D and 3D IC to make package smaller, thinner and with enhanced performance and functions. The complexity of the packaging structure makes the failure analysis a difficulty. When chip function is recovered back after decapsulation of the package. Technique and tools are required to catch the failure site before opening the package. In order to detailed investigate the root cause at packaging level, new tools with higher resolution and penetration capability are required to non-destructively tackle the failure. By utilizing TDR, 3D X-ray microscope and lock-in thermal emission microscope, failure site resulted from package process can be clearly revealed and the root cause can be identified by following physical failure analysis such as cross sectional FIB, SEM and TEM. Examples of failure cases will be discussed in this paper.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"10 1","pages":"1391-1395"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85254363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583099
Paul Wang, David He, Goterry Mai, D. Chung, Don Kearns
This article is Part 2 of a series of studies on new generation of electronic challenges and interconnect process technologies for networking computer products. These products include core routers for service providers, edge and branch routers for enterprise networking companies, small switch and wireless router for commercial and SOHO (small and home office), as well as server and data storage for cloud computing applications at the data center. All these cloud computing products require high data speed in terabytes per second and high reliability for the new generation of mobile users, whenever and wherever they are. Super mobility and high reliability are the backbone for this big dream of internet anywhere.
{"title":"The realization of big networking and cloud computing dream from contact interconnect methodology to process technology (Part 2)","authors":"Paul Wang, David He, Goterry Mai, D. Chung, Don Kearns","doi":"10.1109/ICEPT.2016.7583099","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583099","url":null,"abstract":"This article is Part 2 of a series of studies on new generation of electronic challenges and interconnect process technologies for networking computer products. These products include core routers for service providers, edge and branch routers for enterprise networking companies, small switch and wireless router for commercial and SOHO (small and home office), as well as server and data storage for cloud computing applications at the data center. All these cloud computing products require high data speed in terabytes per second and high reliability for the new generation of mobile users, whenever and wherever they are. Super mobility and high reliability are the backbone for this big dream of internet anywhere.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"26 1","pages":"105-110"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81757802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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