Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583123
H. Su, Pengli Zhu, F. Zhou, Yankang Han, X. Shuai, Yougen Hu, Tingxi Li, R. Sun, C. Wong
We report a facile and highly-effective method to synthesize W-RGO (water dispersible reduced graphene oxide), and fabricate a textile cloth based flexible electrode using the obtained W-RGO as ink materials via the simple dipping and coating method. FTIR (Fourier transform infrared spectroscopy), XPS (X-ray photoelectron spectroscopy) and Raman spectroscopy were used to analyze the morphology and structure of the W-RGO samples. The results showed that the GO (graphene oxide) sheets had been successfully modified and reduced with ABS (3-Aminobenzene sulfonic acid) and Ascorbic Acid. In addition, the CV (cyclic voltammetry) was used to investigate the electrochemical performance with a two-electrode cell measurement, and the electrochemical data exhibited that the electrode displayed high areal capacitance of 70 mF cm-2 at the current density of 5 mA cm-2, and retained 94.3 % of the initial capacitance after 2000 cycles, which provide another new ways to fabricate the flexible and wearable energy storage devices.
本文报道了一种简便高效的制备水分散性还原氧化石墨烯(W-RGO)的方法，并将得到的W-RGO作为油墨材料，通过简单的浸涂法制备纺织布基柔性电极。利用FTIR(傅里叶变换红外光谱)、XPS (x射线光电子能谱)和拉曼光谱分析了W-RGO样品的形貌和结构。结果表明，ABS(3-氨基苯磺酸)和抗坏血酸对氧化石墨烯薄膜进行了成功的改性和还原。此外，利用循环伏安法(CV)研究了双电极电池的电化学性能，电化学数据表明，在电流密度为5 mA cm-2时，电极的面电容高达70 mF cm-2，循环2000次后仍保持初始电容的94.3%，为柔性可穿戴储能器件的制造提供了新的途径。
{"title":"Preparation water dispersible reduced graphene oxide as ink materials for the flexible and wearable energy storage devices","authors":"H. Su, Pengli Zhu, F. Zhou, Yankang Han, X. Shuai, Yougen Hu, Tingxi Li, R. Sun, C. Wong","doi":"10.1109/ICEPT.2016.7583123","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583123","url":null,"abstract":"We report a facile and highly-effective method to synthesize W-RGO (water dispersible reduced graphene oxide), and fabricate a textile cloth based flexible electrode using the obtained W-RGO as ink materials via the simple dipping and coating method. FTIR (Fourier transform infrared spectroscopy), XPS (X-ray photoelectron spectroscopy) and Raman spectroscopy were used to analyze the morphology and structure of the W-RGO samples. The results showed that the GO (graphene oxide) sheets had been successfully modified and reduced with ABS (3-Aminobenzene sulfonic acid) and Ascorbic Acid. In addition, the CV (cyclic voltammetry) was used to investigate the electrochemical performance with a two-electrode cell measurement, and the electrochemical data exhibited that the electrode displayed high areal capacitance of 70 mF cm-2 at the current density of 5 mA cm-2, and retained 94.3 % of the initial capacitance after 2000 cycles, which provide another new ways to fabricate the flexible and wearable energy storage devices.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"22 1","pages":"218-221"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75041678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583274
Cheng Li, H. Guo, Xuesong Zhang, Qian Wang, Jian Cai
The design, assembly and testing of a multi-sensor platform that could be used to detect specific parameters of ambient environment is presented in this paper. This platform will be packaged using System-Level integration and could be used as one of the nodes in a sensor network. It is composed of commercial off-the-shelf components, which allows low cost and flexible component selection. The sensors including an air pressure sensor, an ambient light sensor, and a motion tracking device. A FLASH memory which could be used for storing the measured data is also included. A MCU block is the core device for controlling and communicating with other blocks. A four-layered PCB is carefully designed and simulated to ensure a smaller shape and a reliable electrical environment. All components are assembled on this PCB to constitute a SiP with 16 IOs in Quad Flat No-lead format, thereafter, a prototype is implemented and a testing procedure is taken to verify the functionality of this platform.
{"title":"A design of a multi-sensor platform by System-Level integration in the package","authors":"Cheng Li, H. Guo, Xuesong Zhang, Qian Wang, Jian Cai","doi":"10.1109/ICEPT.2016.7583274","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583274","url":null,"abstract":"The design, assembly and testing of a multi-sensor platform that could be used to detect specific parameters of ambient environment is presented in this paper. This platform will be packaged using System-Level integration and could be used as one of the nodes in a sensor network. It is composed of commercial off-the-shelf components, which allows low cost and flexible component selection. The sensors including an air pressure sensor, an ambient light sensor, and a motion tracking device. A FLASH memory which could be used for storing the measured data is also included. A MCU block is the core device for controlling and communicating with other blocks. A four-layered PCB is carefully designed and simulated to ensure a smaller shape and a reliable electrical environment. All components are assembled on this PCB to constitute a SiP with 16 IOs in Quad Flat No-lead format, thereafter, a prototype is implemented and a testing procedure is taken to verify the functionality of this platform.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"53 1","pages":"897-900"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74785693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583148
Mengni Zhang, Jiajie Fan, C. Qian, Xuejun Fan, Aimin Ji, Guoqi Zhang
In order to prepare phosphor-converted white LEDs with high color rendering index (CRI) and high luminous efficiency, the multicolor phosphor film by mixing more than two monochromatic phosphor powders in a silicone matrix is widely used. But usually its photoluminescence mechanism can't be explained by a simple superposition of each spectra emitted by individual monochromatic phosphors. Additionally, as being close to LED chips, the phosphor film is always suffered under high temperature when LED operates. Therefore, this study analyzes the thermal quenching effects of multicolor phosphor films prepared by mixing the Garnets, Silicates and Nitrides based phosphors in silicone. And their photoluminescence mechanisms are investigated by modeling of spectral power distributions (SPDs) for the prepared white LED chip scale packages (CSPs) through optical simulations with LightTools software. Through analyzing the features of emission spectra (e.g. emission peak, peak wavelength and full widths at half maximum (FWHMs)) from prepared multicolor phosphor films, the results show that the heat treatment leads to a significant decrease of luminous intensity, all peak wavelengths shift to the short-wavelength range and all FWHMs become narrow. However, these results are not simply the superposition of each thermal quenching effect of monochromatic phosphors and this nonlinearity is supposed to be caused by the reabsorption of luminescence between phosphor particles and multiple conversions among them.
{"title":"Analysis of photoluminescence mechanisms and thermal quenching effects for multicolor phosphor films used in high color rendering white LEDs","authors":"Mengni Zhang, Jiajie Fan, C. Qian, Xuejun Fan, Aimin Ji, Guoqi Zhang","doi":"10.1109/ICEPT.2016.7583148","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583148","url":null,"abstract":"In order to prepare phosphor-converted white LEDs with high color rendering index (CRI) and high luminous efficiency, the multicolor phosphor film by mixing more than two monochromatic phosphor powders in a silicone matrix is widely used. But usually its photoluminescence mechanism can't be explained by a simple superposition of each spectra emitted by individual monochromatic phosphors. Additionally, as being close to LED chips, the phosphor film is always suffered under high temperature when LED operates. Therefore, this study analyzes the thermal quenching effects of multicolor phosphor films prepared by mixing the Garnets, Silicates and Nitrides based phosphors in silicone. And their photoluminescence mechanisms are investigated by modeling of spectral power distributions (SPDs) for the prepared white LED chip scale packages (CSPs) through optical simulations with LightTools software. Through analyzing the features of emission spectra (e.g. emission peak, peak wavelength and full widths at half maximum (FWHMs)) from prepared multicolor phosphor films, the results show that the heat treatment leads to a significant decrease of luminous intensity, all peak wavelengths shift to the short-wavelength range and all FWHMs become narrow. However, these results are not simply the superposition of each thermal quenching effect of monochromatic phosphors and this nonlinearity is supposed to be caused by the reabsorption of luminescence between phosphor particles and multiple conversions among them.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"9 1","pages":"334-340"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72661835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583338
Bie Xiaorui, Q. Fei, Zhou Linfeng, Sun Jinglong, Chen Pei, Wang Zhongkang
In order to achieve the packages with much higher performance, more I/Os, lower profile and lighter weight, the thickness of silicon wafer has been decreased dramatically in recent years, but which degrades the strength of thinned wafer. In this paper, three-point bending test was adopted to evaluate the thinned wafer fracture strength, and the impacts of back-grinding process parameters on the wafer fracture strength were addressed. Results show the trend of an increase in wafer strength with an increase in grinding wheel rotational speed and a decrease in grinding wheel feed rate. Also, it is found that the strength decreases progressively from the center of wafer to the edge for most wafer samples.
{"title":"Impacts of back-grinding process parameters on the strength of thinned silicon wafer","authors":"Bie Xiaorui, Q. Fei, Zhou Linfeng, Sun Jinglong, Chen Pei, Wang Zhongkang","doi":"10.1109/ICEPT.2016.7583338","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583338","url":null,"abstract":"In order to achieve the packages with much higher performance, more I/Os, lower profile and lighter weight, the thickness of silicon wafer has been decreased dramatically in recent years, but which degrades the strength of thinned wafer. In this paper, three-point bending test was adopted to evaluate the thinned wafer fracture strength, and the impacts of back-grinding process parameters on the wafer fracture strength were addressed. Results show the trend of an increase in wafer strength with an increase in grinding wheel rotational speed and a decrease in grinding wheel feed rate. Also, it is found that the strength decreases progressively from the center of wafer to the edge for most wafer samples.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"141 1","pages":"1197-1200"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77540680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper focuses on the dynamic analysis of a novel piezo-based accelerometer with asymmetric gapped cantilever array. The accelerometer with asymmetric gapped cantilever, firstly published in Xu's work, exhibits significantly improved sensitivity. In this paper, in order to achieve wider dynamic response range, new structure of the accelerometer is proposed with asymmetric gapped cantilever array.
{"title":"Dynamic analysis of piezo-based accelerometer with asymmetric gapped cantilever array","authors":"Zhang Luo, Chaojun Liu, Shuai Yu, Sheng Liu, Yong Xu","doi":"10.1109/ICEPT.2016.7583346","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583346","url":null,"abstract":"This paper focuses on the dynamic analysis of a novel piezo-based accelerometer with asymmetric gapped cantilever array. The accelerometer with asymmetric gapped cantilever, firstly published in Xu's work, exhibits significantly improved sensitivity. In this paper, in order to achieve wider dynamic response range, new structure of the accelerometer is proposed with asymmetric gapped cantilever array.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"107 1","pages":"1230-1234"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77420189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583124
Weisong Li, Xiuyang Shan, Haining Zhang
Fluid viscosity varying with fluid temperature is a key factor in influencing the volume consistency of the fluid jet dispensing process. In this paper, the mechanism model of the transient temperature field in jet dispensing valve was developed by applying heat transfer equations and thermal boundary conditions. Discrete solution of the model was achieved based on the Method of Lines. The design of PID controller was efficiently integrated into the proposed model to address the problem that the fluid temperature cannot keep stable at the set value in the jet dispensing valve. Simulations and experiments demonstrate the feasibility and efficiency of the proposed model. This paper provides references for analyzing and controlling the temperature of fluid in fluid jet dispensing process.
{"title":"Modeling and control of the temperature field in jet dispensing valve","authors":"Weisong Li, Xiuyang Shan, Haining Zhang","doi":"10.1109/ICEPT.2016.7583124","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583124","url":null,"abstract":"Fluid viscosity varying with fluid temperature is a key factor in influencing the volume consistency of the fluid jet dispensing process. In this paper, the mechanism model of the transient temperature field in jet dispensing valve was developed by applying heat transfer equations and thermal boundary conditions. Discrete solution of the model was achieved based on the Method of Lines. The design of PID controller was efficiently integrated into the proposed model to address the problem that the fluid temperature cannot keep stable at the set value in the jet dispensing valve. Simulations and experiments demonstrate the feasibility and efficiency of the proposed model. This paper provides references for analyzing and controlling the temperature of fluid in fluid jet dispensing process.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"8 1","pages":"222-226"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76367349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583349
Dan Yang, Zhao-Jun Zhu, Peng Liu
A switched line microwave digital phase shifter and a hybrid coupler phase shifter using PIN diodes which are operated at center frequencies from 14GHz to 14.5GHz are presented. The former is able to realize 180 degree phase shift and the latter is able to realize 11.25 degree phase shift. The phase shifters are designed to implement on a microstrip circuit type. Both of the two phase shifters can achieve flat phase shift and low VSWR by adding open-end transmission lines to the circuit. The simulation result shows that the design is very effectual.
{"title":"Design of 14–14.5GHz semiconductor microwave digital phase shifters","authors":"Dan Yang, Zhao-Jun Zhu, Peng Liu","doi":"10.1109/ICEPT.2016.7583349","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583349","url":null,"abstract":"A switched line microwave digital phase shifter and a hybrid coupler phase shifter using PIN diodes which are operated at center frequencies from 14GHz to 14.5GHz are presented. The former is able to realize 180 degree phase shift and the latter is able to realize 11.25 degree phase shift. The phase shifters are designed to implement on a microstrip circuit type. Both of the two phase shifters can achieve flat phase shift and low VSWR by adding open-end transmission lines to the circuit. The simulation result shows that the design is very effectual.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"146 1","pages":"1244-1246"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77692817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583377
Guangjie Yuan, Ning Wang, Shirong Huang, Johan Liu
Atomic layer deposition (ALD) and atomic layer etching (ALE) are two important techniques in the semiconductor processing, which focus ultra-thin film deposition and etching, respectively. Both of them have the self-limiting surface behavior, and could realize the atomic-scale fidelity in the deposition and etching processes. Unlike traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD has good step coverage, atomic-scale thickness controllability, and composition uniformity at low growth temperature. Compared with traditional continuous-wave plasma etching, ALE has smooth surface, excellent depth uniformity and atomic-scale thickness controllability. In this review, their fundamental and applications have been discussed.
{"title":"A brief overview of atomic layer deposition and etching in the semiconductor processing","authors":"Guangjie Yuan, Ning Wang, Shirong Huang, Johan Liu","doi":"10.1109/ICEPT.2016.7583377","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583377","url":null,"abstract":"Atomic layer deposition (ALD) and atomic layer etching (ALE) are two important techniques in the semiconductor processing, which focus ultra-thin film deposition and etching, respectively. Both of them have the self-limiting surface behavior, and could realize the atomic-scale fidelity in the deposition and etching processes. Unlike traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD has good step coverage, atomic-scale thickness controllability, and composition uniformity at low growth temperature. Compared with traditional continuous-wave plasma etching, ALE has smooth surface, excellent depth uniformity and atomic-scale thickness controllability. In this review, their fundamental and applications have been discussed.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"27 1","pages":"1365-1368"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81004928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583240
G. Wang, L. Yin, Z. Yao, Jinzhao Wang
The effects of thermal aging and electromigration on the tensile strength and microstructure of SnAgCu micro-interconnection solder joints with different volume were discussed in this paper. The experimental results show that isothermal aging results in coarsening of the microstructure in the solder joint, and electromigration leads to micro-hole or micro-crack in the cathode interface, which bring about obvious degradation of tensile strength to the joints. The smaller volume of the micro-interconnection joint is, the less degradation of tensile strength for it, this is caused by the increasing mechanical constraint in the solder joints.
{"title":"Effects of thermal aging and electromigration on tensile strength of SnAgCu solder joints with different volume","authors":"G. Wang, L. Yin, Z. Yao, Jinzhao Wang","doi":"10.1109/ICEPT.2016.7583240","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583240","url":null,"abstract":"The effects of thermal aging and electromigration on the tensile strength and microstructure of SnAgCu micro-interconnection solder joints with different volume were discussed in this paper. The experimental results show that isothermal aging results in coarsening of the microstructure in the solder joint, and electromigration leads to micro-hole or micro-crack in the cathode interface, which bring about obvious degradation of tensile strength to the joints. The smaller volume of the micro-interconnection joint is, the less degradation of tensile strength for it, this is caused by the increasing mechanical constraint in the solder joints.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"11 1","pages":"753-756"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90012322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583203
Jian Gu, Y. Lei, Jian Lin, H. Fu, Zhong-wei Wu
the reliability of solder joint under drop impact is a crucial research area due to the smaller and higher density. The test standard for board level has been published by JEDEC in detail. Based on JEDEC board level drop test standard, the square board with four symmetry component is designed in this paper. The structure size of test board is 0.5mm×121mm×121mm. The distance of the center component to the center of test board is 15mm. The first six modal frequency is 23.56Hz, 136.37Hz, 138.53Hz, 165.98Hz, 346.35Hz and 394.56Hz respectively. This Design benefits for the board level drop life of solder joint statistics analysis. And the 0.5mm thickness design can be used as replacement test board to analyze the failure mechanism of solder joint under relative high drop impact level.
{"title":"Design of the printed circuit board for board level drop impact base on the JEDEC standard","authors":"Jian Gu, Y. Lei, Jian Lin, H. Fu, Zhong-wei Wu","doi":"10.1109/ICEPT.2016.7583203","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583203","url":null,"abstract":"the reliability of solder joint under drop impact is a crucial research area due to the smaller and higher density. The test standard for board level has been published by JEDEC in detail. Based on JEDEC board level drop test standard, the square board with four symmetry component is designed in this paper. The structure size of test board is 0.5mm×121mm×121mm. The distance of the center component to the center of test board is 15mm. The first six modal frequency is 23.56Hz, 136.37Hz, 138.53Hz, 165.98Hz, 346.35Hz and 394.56Hz respectively. This Design benefits for the board level drop life of solder joint statistics analysis. And the 0.5mm thickness design can be used as replacement test board to analyze the failure mechanism of solder joint under relative high drop impact level.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"64 1","pages":"588-591"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85279358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：