Nano-Micro Letters最新文献

Two-step-processed (TSP) inverted p-i-n perovskite solar cells (PSCs) have demonstrated significant promise in tandem applications. However, the power conversion efficiency (PCE) of TSP p-i-n PSCs rarely exceeds 24%. Here, we demonstrate that TSP perovskite films exhibit a vertically gradient distribution of residual PbI₂ clusters, which form Schottky heterojunctions with the perovskite, leading to substantial interfacial energy-level mismatches within NiO_x-based TSP p-i-n PSCs. These limitations were effectively addressed via a vertical interfacial engineering enabled by dual-interface modification incorporating tin trifluoromethanesulfonate (Sn(OTF)₂) and 4-Fluorophenylethylamine chloride (F-PEA) at the NiO_x/perovskite and perovskite/C60 interfaces, respectively. The functional Sn(OTF)₂ not only enhances the conductivity of NiO_x films but also suppresses ion migration, while inducing the formation of a Pb-Sn mixed perovskite interlayer that precisely regulates the energy level at the NiO_x/perovskite interface. Complementally, F-PEA post-treatment effectively converts surface residual PbI₂ clusters into a 2D perovskite capping layer, which simultaneously passivates surface defects and enhances energy-level alignment at the perovskite/C60 interface. Consequently, the optimized NiO_x-based TSP p-i-n PSCs achieve a notable PCE of 25.6% with superior operational stability. This study elucidates the underlying mechanisms limiting the efficiency of TSP p-i-n PSCs, while establishing design principles for these devices targeting 26% efficiency.

Oxide semiconductors (OSs), introduced by the Hosono group in the early 2000s, have evolved from display backplane materials to promising candidates for advanced memory and logic devices. The exceptionally low leakage current of OSs and compatibility with three-dimensional (3D) architectures have recently sparked renewed interest in their use in semiconductor applications. This review begins by exploring the unique material properties of OSs, which fundamentally originate from their distinct electronic band structure. Subsequently, we focus on atomic layer deposition (ALD), a core technique for growing excellent OS films, covering both basic and advanced processes compatible with 3D scaling. The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced. Furthermore, material design strategies, such as cation selection, crystallinity control, anion doping, and heterostructure engineering, are discussed. We also highlight challenges in memory applications, including contact resistance, hydrogen instability, and lack of p-type materials, and discuss the feasibility of ALD-grown OSs as potential solutions. Lastly, we provide an outlook on the role of ALD-grown OSs in memory technologies. This review bridges material fundamentals and device-level requirements, offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.

Highlights

Highlights

Highlights

The development of multifunctional electromagnetic wave-absorbing materials is essential for next-generation flexible electronics and intelligent protection systems. Herein, a novel three-dimensional porous MXene-based film integrated with metallic nickel nanoparticles (Ni-PMF) is designed and synthesized with the potential to address the urgent need for multifunctional electromagnetic wave-absorbing materials in next-generation intelligent systems. By using polystyrene spheres as sacrificial templates, a hierarchical porous architecture is constructed to prevent MXene nanosheet restacking, extend electromagnetic wave propagation paths, and optimize impedance matching. Simultaneously, uniformly distributed Ni nanoparticles introduce abundant heterogeneous interfaces, enhancing interfacial polarization and magnetic loss, which significantly improve electromagnetic wave attenuation. The Ni-PMF film achieves a minimum reflection loss of –64.7 dB and a broad effective absorption bandwidth of 7.2 GHz, covering the full Ku-band and outperforming most reported MXene thin film absorbers. In addition to superior electromagnetic wave absorption, the film demonstrates excellent electrothermal conversion and flexible strain-sensing capabilities, enabling integrated protection and real-time sensing functions. This multifunctional material offers promising potential for next-generation smart flexible electronic systems.

Sustainability and scalability remain critical hurdles for the commercialization of organic solar cells (OSCs). However, addressing both poses challenge. Herein, we introduce a simple yet effective strategy utilizing 3,5-dichloropyridine (PDCC) as a solid additive to fine-tune the self-assembly behavior of Y-series non-fullerene acceptors (NFAs) to tackle the upscaling limitations in green-solvent-processed OSCs. PDCC predominantly interacts with Y-series NFAs, facilitating molecular crystallization and thereby driving the self-assembly of Y-series NFAs during film-forming dynamics, leading to more uniform active layers with improved molecular packing and reduced charge recombination. As a result, PDCC-driven self-assembly strategy enables high-performance OSCs with a power conversion efficiency (PCE) of 20.47%. When translated to sustainable fabrication, this strategy significantly boosts the PCE of large-area green-solvent-processed OSC modules (19.3 cm²) from 13.87% to 15.79%, ranking it among the best-performing green-solvent-processed large-area OSC modules (> 18 cm²). Beyond its impact on PCE enhancement, PDCC serves as a multifunctional additive to improve long-term stability and exhibits strong universality across multiple material systems. This work establishes a promising approach for advancing sustainable and scalable OSCs, paving the way for their commercialization.

Highlights

Highlights