Two-dimensional (2D) material heterostructure technology has been widely applied in numerous photodetectors due to its efficient light–matter interaction and versatile device construction. However, less attention has been paid to the coordinated optimization of photogenerated carrier dynamics, spanning generation, separation, and transportation procedures, which requires comprehensive consideration from both optical and electrical aspects. Here, we designed and fabricated a six-electrode ZnTe/Bi2O2Se heterostructure photodetector, which enables a direct comparison of the performance of three material configurations (ZnTe, Bi2O2Se, and the heterostructure) within a single device. The ZnTe nanoribbon, with its direct-bandgap structure, exhibits efficient light absorption and photogenerated carrier production. When combined with the high carrier mobility of Bi2O2Se 2D nanosheets, the heterostructure region demonstrates superior photoresponse under weak light illumination compared to the individual material regions; the responsivity reaches 107.6 A/W, more than twice that of the Bi2O2Se region. The stable photoresponse of the heterostructure region under low light intensity and low bias voltage makes it suitable for optical imaging applications. This work highlights the importance of heterostructure technology and device architecture design, providing insights for achieving high-performance photodetectors.
{"title":"High-performance ZnTe/Bi2O2Se heterostructure photodetector for optical imaging applications","authors":"Hanrong Xie, Xiao Ma, Miao Liu, Yaopeng Ye, Yicheng Wang, Liang Ma, Manyan Xie, Rui Rong, Ziliang Fang, Chui Pian, Bingyu Chen, Tiefeng Yang, Heyuan Guan, Huihui Lu","doi":"10.1063/5.0315351","DOIUrl":"https://doi.org/10.1063/5.0315351","url":null,"abstract":"Two-dimensional (2D) material heterostructure technology has been widely applied in numerous photodetectors due to its efficient light–matter interaction and versatile device construction. However, less attention has been paid to the coordinated optimization of photogenerated carrier dynamics, spanning generation, separation, and transportation procedures, which requires comprehensive consideration from both optical and electrical aspects. Here, we designed and fabricated a six-electrode ZnTe/Bi2O2Se heterostructure photodetector, which enables a direct comparison of the performance of three material configurations (ZnTe, Bi2O2Se, and the heterostructure) within a single device. The ZnTe nanoribbon, with its direct-bandgap structure, exhibits efficient light absorption and photogenerated carrier production. When combined with the high carrier mobility of Bi2O2Se 2D nanosheets, the heterostructure region demonstrates superior photoresponse under weak light illumination compared to the individual material regions; the responsivity reaches 107.6 A/W, more than twice that of the Bi2O2Se region. The stable photoresponse of the heterostructure region under low light intensity and low bias voltage makes it suitable for optical imaging applications. This work highlights the importance of heterostructure technology and device architecture design, providing insights for achieving high-performance photodetectors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xuesong Zhang, Jikun Ma, Junlin Zhang, Yan Wang, Dongqiang Lei, Zhifeng Wang
The solar furnace enables the rapid sintering of ceramics, but the underlying mechanisms affecting optical absorption at elevated temperatures remain to be investigated. This study investigates the temperature-dependent band structure of ZnO crystals and its impact on the optical absorption of solar-sintered ZnO ceramics. The quasiparticle bandgap of ZnO is calculated using the G0W0 approximation. The renormalization effects due to electron–phonon interactions (EPIs) and lattice thermal expansion are evaluated using ab initio methods. The results demonstrate that the bandgap renormalization is primarily attributed to EPIs. The calculated reduction in the bandgap with increasing temperature agrees with that extracted from diffuse reflectance spectra of solar-sintered ZnO ceramics. Shifting the absorption edge toward longer wavelengths at higher temperatures enhances the ceramic absorption in the solar spectrum range. This study provides fundamental insights into the optical absorption properties relevant to photon-driven sintering technology.
{"title":"Temperature-dependent bandgap renormalization in ZnO ceramics sintered using concentrated solar energy","authors":"Xuesong Zhang, Jikun Ma, Junlin Zhang, Yan Wang, Dongqiang Lei, Zhifeng Wang","doi":"10.1063/5.0303766","DOIUrl":"https://doi.org/10.1063/5.0303766","url":null,"abstract":"The solar furnace enables the rapid sintering of ceramics, but the underlying mechanisms affecting optical absorption at elevated temperatures remain to be investigated. This study investigates the temperature-dependent band structure of ZnO crystals and its impact on the optical absorption of solar-sintered ZnO ceramics. The quasiparticle bandgap of ZnO is calculated using the G0W0 approximation. The renormalization effects due to electron–phonon interactions (EPIs) and lattice thermal expansion are evaluated using ab initio methods. The results demonstrate that the bandgap renormalization is primarily attributed to EPIs. The calculated reduction in the bandgap with increasing temperature agrees with that extracted from diffuse reflectance spectra of solar-sintered ZnO ceramics. Shifting the absorption edge toward longer wavelengths at higher temperatures enhances the ceramic absorption in the solar spectrum range. This study provides fundamental insights into the optical absorption properties relevant to photon-driven sintering technology.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"22 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Terahertz (THz) sensing of deep-subwavelength dielectric films remains a formidable challenge due to the stark mismatch between the long wavelengths of terahertz radiation and the nanoscale thicknesses of the analytes. Although high-quality-factor (Q) metallic resonators are widely used to enhance light–matter interaction, their performance is fundamentally constrained by intrinsic radiative and non-radiative losses. Overcoming these limitations is crucial to achieving strong local-field enhancement and detecting ultrathin films. Here, we present a planar metasurface sensor fabricated on an ultra-low-index, flexible cyclic olefin copolymer substrate, engineered to achieve strong electromagnetic field confinement within an effective mode volume of 7.52 μm3 [approximately 10−7(λ/n)3] at 0.94 THz. This design achieves a high Q/Veff ratio of ∼1.463, effectively overcoming the limitations of conventional high-Q resonance approaches. Using conventional THz time-domain spectroscopy, we experimentally detect an ultrathin 2 nm germanium (Ge) overlayer equivalent to λ/160 000, where λ is the resonant wavelength. To the best of our knowledge, this demonstrates the thinnest analyte layer ever detected at terahertz frequencies, achieved through exceptional sensitivity of micrometer-scale resonators that obviate the need for complex nanoscale fabrication. The sensor exhibits a refractive index sensitivity of 15.54 GHz/RIU for a 40 nm analyte layer, establishing a new paradigm for deep-subwavelength THz sensing and paving the way for compact, flexible, and high-performance THz photonic platforms.
{"title":"Deep-subwavelength (∼λ/160 000) terahertz sensing with an ultrathin flexible metasurface","authors":"Vanlal Rinfela, Bhawana Andola, Rajour Tanyi Ako, Naveen Periketi, Bhaswati Biswas, Madhu Bhaskaran, Chandrasekhar Murapaka, Anil Kumar Chaudhary, Sharath Sriram, Prem Pal, Yogesh Kumar Srivastava","doi":"10.1063/5.0312965","DOIUrl":"https://doi.org/10.1063/5.0312965","url":null,"abstract":"Terahertz (THz) sensing of deep-subwavelength dielectric films remains a formidable challenge due to the stark mismatch between the long wavelengths of terahertz radiation and the nanoscale thicknesses of the analytes. Although high-quality-factor (Q) metallic resonators are widely used to enhance light–matter interaction, their performance is fundamentally constrained by intrinsic radiative and non-radiative losses. Overcoming these limitations is crucial to achieving strong local-field enhancement and detecting ultrathin films. Here, we present a planar metasurface sensor fabricated on an ultra-low-index, flexible cyclic olefin copolymer substrate, engineered to achieve strong electromagnetic field confinement within an effective mode volume of 7.52 μm3 [approximately 10−7(λ/n)3] at 0.94 THz. This design achieves a high Q/Veff ratio of ∼1.463, effectively overcoming the limitations of conventional high-Q resonance approaches. Using conventional THz time-domain spectroscopy, we experimentally detect an ultrathin 2 nm germanium (Ge) overlayer equivalent to λ/160 000, where λ is the resonant wavelength. To the best of our knowledge, this demonstrates the thinnest analyte layer ever detected at terahertz frequencies, achieved through exceptional sensitivity of micrometer-scale resonators that obviate the need for complex nanoscale fabrication. The sensor exhibits a refractive index sensitivity of 15.54 GHz/RIU for a 40 nm analyte layer, establishing a new paradigm for deep-subwavelength THz sensing and paving the way for compact, flexible, and high-performance THz photonic platforms.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"54 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kagome materials exhibit unique electronic properties, such as the quantum anomalous Hall effect. The control of Chern numbers is critical for quantum device manipulation, but existing research has mainly focused on collinear magnetization while neglecting chiral spin textures. Through first-principles calculations and tight-binding modeling of monolayer Cr3Se4, this study reveals spin-chirality-dependent control of topological gaps, Chern numbers, and valley polarization in kagome materials. The results demonstrate that the azimuthal angle has no observable effect. For collinear magnetization (κ = 0) or spin-chirality κ = −1, the topological bandgap decreases as the spin orientation approaches the in-plane direction. Conversely, increasing the polar angle enhances the bandgap for κ = 1. In the breathing kagome lattice, the degeneracy between K and Kʹ valleys is lifted. As the gap undergoes sequential closure and reopening in the two valleys, the structural asymmetry and spin-chirality allow for controlled tuning of the topological gap, Chern number, and valley polarization. Moreover, the emergence of a topological Hall effect is also demonstrated. These findings provide strategies for controlling topological states and advancing applications in quantum devices and valleytronic systems.
{"title":"Spin-chirality-dependent modulation of topological gap, Chern number, and valley polarization in monolayer kagome lattice Cr3Se4","authors":"Wenzhe Zhou, Lu Liu, Guibo Zheng, Yating Li, Aolin Li, Fangping Ouyang","doi":"10.1063/5.0312318","DOIUrl":"https://doi.org/10.1063/5.0312318","url":null,"abstract":"Kagome materials exhibit unique electronic properties, such as the quantum anomalous Hall effect. The control of Chern numbers is critical for quantum device manipulation, but existing research has mainly focused on collinear magnetization while neglecting chiral spin textures. Through first-principles calculations and tight-binding modeling of monolayer Cr3Se4, this study reveals spin-chirality-dependent control of topological gaps, Chern numbers, and valley polarization in kagome materials. The results demonstrate that the azimuthal angle has no observable effect. For collinear magnetization (κ = 0) or spin-chirality κ = −1, the topological bandgap decreases as the spin orientation approaches the in-plane direction. Conversely, increasing the polar angle enhances the bandgap for κ = 1. In the breathing kagome lattice, the degeneracy between K and Kʹ valleys is lifted. As the gap undergoes sequential closure and reopening in the two valleys, the structural asymmetry and spin-chirality allow for controlled tuning of the topological gap, Chern number, and valley polarization. Moreover, the emergence of a topological Hall effect is also demonstrated. These findings provide strategies for controlling topological states and advancing applications in quantum devices and valleytronic systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"95 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kaiquan Fan, Simon Van Beek, Giacomo Talmelli, Vaishnavi Kateel, Domenico Giuliano, Bob Bert Vermeulen, Kaiming Cai, Bart Sorée, Jo De Boeck, Robert Carpenter, Siddharth Rao, Sebastien Couet, Van Dai Nguyen, Gouri Sankar Kar
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is detected via tunneling magnetoresistance (TMR). Simulations reveal that local modulation of perpendicular magnetic anisotropy in one SAF sublayer leads to distinct switching characteristics. The switching field varies linearly with the anisotropy field, indicating voltage-controlled magnetic anisotropy (VCMA)-dominated dynamics similar to single free-layer devices. We then experimentally study the magnetic switching field of MTJ devices with SAF free layers under applied gate voltage. By varying the MgO tunnel barrier thickness to systematically modulate the resistance-area (RA) product, we enable quantitative separation of spin-transfer torque (STT), VCMA, and Joule heating contributions. Our findings indicate that VCMA dominates in devices with a high-RA product, while low-RA devices exhibit nonlinear switching behavior due to enhanced contributions from STT and Joule heating. Furthermore, the effective fields derived from STT, VCMA, and Joule heating contributions under various gate voltages show minimal dependence on device critical dimensions, indicating favorable scaling behavior. This work presents a unified framework analyzing the roles of STT, VCMA, and Joule heating in SAF-based voltage-gated spin–orbit torque (SOT) magnetic random-access memory (MRAM), offering key insights for the optimization of performance, energy efficiency, and scalability in SOT-MRAM technologies.
{"title":"Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer","authors":"Kaiquan Fan, Simon Van Beek, Giacomo Talmelli, Vaishnavi Kateel, Domenico Giuliano, Bob Bert Vermeulen, Kaiming Cai, Bart Sorée, Jo De Boeck, Robert Carpenter, Siddharth Rao, Sebastien Couet, Van Dai Nguyen, Gouri Sankar Kar","doi":"10.1063/5.0289550","DOIUrl":"https://doi.org/10.1063/5.0289550","url":null,"abstract":"We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is detected via tunneling magnetoresistance (TMR). Simulations reveal that local modulation of perpendicular magnetic anisotropy in one SAF sublayer leads to distinct switching characteristics. The switching field varies linearly with the anisotropy field, indicating voltage-controlled magnetic anisotropy (VCMA)-dominated dynamics similar to single free-layer devices. We then experimentally study the magnetic switching field of MTJ devices with SAF free layers under applied gate voltage. By varying the MgO tunnel barrier thickness to systematically modulate the resistance-area (RA) product, we enable quantitative separation of spin-transfer torque (STT), VCMA, and Joule heating contributions. Our findings indicate that VCMA dominates in devices with a high-RA product, while low-RA devices exhibit nonlinear switching behavior due to enhanced contributions from STT and Joule heating. Furthermore, the effective fields derived from STT, VCMA, and Joule heating contributions under various gate voltages show minimal dependence on device critical dimensions, indicating favorable scaling behavior. This work presents a unified framework analyzing the roles of STT, VCMA, and Joule heating in SAF-based voltage-gated spin–orbit torque (SOT) magnetic random-access memory (MRAM), offering key insights for the optimization of performance, energy efficiency, and scalability in SOT-MRAM technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"345 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wenlu Shi, Gene D. Nelson, Han-Hsuan Wu, Yiwei Ju, Xiaoqing Pan, Wilson Ho, Ilya N. Krivorotov
Spintronic terahertz emitters (STEs) generate broadband THz radiation via ultrafast spin–charge conversion in magnetic multilayers, offering spectral coverage beyond that of photoconductive antennas and nonlinear optical crystals. Here, we demonstrate STEs based on a PtxAu100−x alloy that achieve significantly higher THz output power than widely used Pt-based devices. Alloy composition and layer thickness tuning yield Pt75Au25 as the optimal alloy, providing a 30% increase in THz power in CoFeB/Pt75Au25 bilayer STEs compared to the optimized CoFeB/Pt reference STE. In W/CoFeB/Pt75Au25 trilayer STEs, we observe a 10% higher THz power than in the optimized W/CoFeB/Pt trilayer. The STE efficiency is reduced upon annealing for both Pt75Au25- and Pt-based STEs due to the formation of interfacial alloys. Our results establish Pt75Au25 as a promising platform for high-performance STEs, where its giant spin Hall effect significantly enhances efficiency over conventional Pt-based devices.
{"title":"High-efficiency Pt75Au25-based spintronic terahertz emitters","authors":"Wenlu Shi, Gene D. Nelson, Han-Hsuan Wu, Yiwei Ju, Xiaoqing Pan, Wilson Ho, Ilya N. Krivorotov","doi":"10.1063/5.0304951","DOIUrl":"https://doi.org/10.1063/5.0304951","url":null,"abstract":"Spintronic terahertz emitters (STEs) generate broadband THz radiation via ultrafast spin–charge conversion in magnetic multilayers, offering spectral coverage beyond that of photoconductive antennas and nonlinear optical crystals. Here, we demonstrate STEs based on a PtxAu100−x alloy that achieve significantly higher THz output power than widely used Pt-based devices. Alloy composition and layer thickness tuning yield Pt75Au25 as the optimal alloy, providing a 30% increase in THz power in CoFeB/Pt75Au25 bilayer STEs compared to the optimized CoFeB/Pt reference STE. In W/CoFeB/Pt75Au25 trilayer STEs, we observe a 10% higher THz power than in the optimized W/CoFeB/Pt trilayer. The STE efficiency is reduced upon annealing for both Pt75Au25- and Pt-based STEs due to the formation of interfacial alloys. Our results establish Pt75Au25 as a promising platform for high-performance STEs, where its giant spin Hall effect significantly enhances efficiency over conventional Pt-based devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Broadband, high-efficiency, and low-power multifunctional integrated photodetectors are essential for advanced applications, including imaging, optical communication, and remote sensing. Photodetectors based solely on two-dimensional materials still encounter challenges such as limited out-of-plane charge transport, relatively low in-plane carrier mobility, and inadequate photocurrent generation. Here, we report a mixed-dimensional TiS3/WSe2 van der Waals heterojunction photodetector with type-II band alignment, enabling efficient carrier separation. The device achieves broadband detection from 405 to 1050 nm, with a responsivity of 1.61 A/W, an external quantum efficiency of 261.21%, and a specific detectivity of 2.31 × 1011 Jones under a bias voltage of 1 V. Under zero bias, the device exhibits a responsivity of 52 mA/W, a specific detectivity of 1.19 × 1011 Jones, and an open-circuit voltage of 145 mV. Furthermore, integrated with a convolutional neural network, the TiS3/WSe2 photodetector enables handwritten digit recognition accuracies of up to 97.0% under biased operation and 88.7% under self-powered sensing conditions. These results establish the TiS3/WSe2 heterojunction as a promising platform for broadband, low-power, and self-powered intelligent optoelectronics.
{"title":"Self-powered broadband photodetector with intelligent sensing based on a mixed-dimensional TiS3/WSe2 van der Waals heterojunction","authors":"Jinpeng Zhao, Cheng Qi, Yu Jiang, Liming Zhang, Weidong Dai, Mengyu Zhang, Shangqing Xu, Weichang Zhou, Honglai Li, Tiefeng Yang, Yipeng Zhao, Yicheng Wang, Xing Xu, Liang Ma","doi":"10.1063/5.0318627","DOIUrl":"https://doi.org/10.1063/5.0318627","url":null,"abstract":"Broadband, high-efficiency, and low-power multifunctional integrated photodetectors are essential for advanced applications, including imaging, optical communication, and remote sensing. Photodetectors based solely on two-dimensional materials still encounter challenges such as limited out-of-plane charge transport, relatively low in-plane carrier mobility, and inadequate photocurrent generation. Here, we report a mixed-dimensional TiS3/WSe2 van der Waals heterojunction photodetector with type-II band alignment, enabling efficient carrier separation. The device achieves broadband detection from 405 to 1050 nm, with a responsivity of 1.61 A/W, an external quantum efficiency of 261.21%, and a specific detectivity of 2.31 × 1011 Jones under a bias voltage of 1 V. Under zero bias, the device exhibits a responsivity of 52 mA/W, a specific detectivity of 1.19 × 1011 Jones, and an open-circuit voltage of 145 mV. Furthermore, integrated with a convolutional neural network, the TiS3/WSe2 photodetector enables handwritten digit recognition accuracies of up to 97.0% under biased operation and 88.7% under self-powered sensing conditions. These results establish the TiS3/WSe2 heterojunction as a promising platform for broadband, low-power, and self-powered intelligent optoelectronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"6 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The time domain is a one-dimensional space, and hence the diffraction–interference in three dimensions is absent. However, ghost diffraction–interference (GD) building on a two-particle-enabled Young's experiment is still relevant. This is because fixed-timing detection can emulate pinhole detection at the core of GD. Here is demonstrated a different class of GD free of pinhole detection in the time domain. The bucket detection in ghost imaging enables it, which is best paraphrased as “ghost diffraction–interference via ghost imaging.”
{"title":"Ghost diffraction–interference fringes of bosons via ghost imaging","authors":"Yoshiki O-oka, Hiroka Otomo, Ryota Keyaki, Susumu Fukatsu","doi":"10.1063/5.0312208","DOIUrl":"https://doi.org/10.1063/5.0312208","url":null,"abstract":"The time domain is a one-dimensional space, and hence the diffraction–interference in three dimensions is absent. However, ghost diffraction–interference (GD) building on a two-particle-enabled Young's experiment is still relevant. This is because fixed-timing detection can emulate pinhole detection at the core of GD. Here is demonstrated a different class of GD free of pinhole detection in the time domain. The bucket detection in ghost imaging enables it, which is best paraphrased as “ghost diffraction–interference via ghost imaging.”","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhen Yue, Feiyang Hou, Yuchen Yin, Yujie Wang, Yang Liao, Wendong Lu, Bing Gu, Chunxiang Xu, Qiannan Cui
Utilizing a femtosecond laser pump–probe system, we perform a failure test of laser damage with a 55-nm-thick MoS2 as an ultrafast photoacoustic transducer. By increasing pump laser fluence until the laser damage occurs, the longitudinal coherent acoustic phonon oscillation of MoS2 layers and the emitted picosecond acoustic pulse have been simultaneously measured and analyzed. Laser excitation and damage thresholds of 27.58 and 579.18 μJ/cm2 have been measured, respectively. Dramatic photothermal effects are further observed with increasing pump fluences, which lead to MoS2 lattice softening and MoS2/glass interface annealing. When the pump fluence is increased to 579.18 μJ/cm2, the laser damage suddenly occurred and created a nanohole on MoS2, indicating a damage mechanism of the plasma explosion facilitated by photothermal effects. Our results provide insight into the rational design and thermal management of next-generation ultrafast photoacoustic transducers with 2D layered semiconductors.
{"title":"Observing femtosecond laser damage failure of a MoS2 thin film as an ultrafast photoacoustic transducer","authors":"Zhen Yue, Feiyang Hou, Yuchen Yin, Yujie Wang, Yang Liao, Wendong Lu, Bing Gu, Chunxiang Xu, Qiannan Cui","doi":"10.1063/5.0307003","DOIUrl":"https://doi.org/10.1063/5.0307003","url":null,"abstract":"Utilizing a femtosecond laser pump–probe system, we perform a failure test of laser damage with a 55-nm-thick MoS2 as an ultrafast photoacoustic transducer. By increasing pump laser fluence until the laser damage occurs, the longitudinal coherent acoustic phonon oscillation of MoS2 layers and the emitted picosecond acoustic pulse have been simultaneously measured and analyzed. Laser excitation and damage thresholds of 27.58 and 579.18 μJ/cm2 have been measured, respectively. Dramatic photothermal effects are further observed with increasing pump fluences, which lead to MoS2 lattice softening and MoS2/glass interface annealing. When the pump fluence is increased to 579.18 μJ/cm2, the laser damage suddenly occurred and created a nanohole on MoS2, indicating a damage mechanism of the plasma explosion facilitated by photothermal effects. Our results provide insight into the rational design and thermal management of next-generation ultrafast photoacoustic transducers with 2D layered semiconductors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"71 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Coptis chinensis (cc) was widely used in traditional Chinese medicine for the treatment of various diseases, and its quality evaluation directly influenced clinical efficacy and safety. Traditional analytical methods, such as chromatographic or mass spectrometric techniques, were limited by high equipment costs and complex operational procedures. Here, a gelatin (Gel) side-gated double-layer field-effect transistor (GGDL-FET) was designed for highly sensitive detection of cc. The electric double-layer (EDL) capacitance of GGDL-FET reached 12.2 μF with 2 wt. % Gel. The superposition effect of electric fields 1 and 2 (E1 and E2) enhanced the gate control capability, thus contributed to a significant increase in channel current (∼374.4%). Furthermore, berberine (BBR) as the main components of cc was first quantified, and the incorporation of BBR increased the ion concentration of Gel electrolyte as well as the EDL capacitance since the quaternary ammonium salt group in its structure produced more positive charges, which enhanced the gate controllability and led to an obvious increase in the channel current. Subsequently, cc samples with varying concentration gradients were introduced into Gel. The resulting changes of the channel current exhibited consistent behavior with BBR alone, demonstrating a concentration-dependent response. The device detected cc with concentrations of 1, 2, and 3 wt. %. Thus, the concentration of BBR in cc could be evaluated by analyzing the changing trend of channel current, which provided a reference for the quality assessment of cc.
{"title":"Gelatin electric double-layer side-gated FETs: Capacitive coupling mechanism for label-free detection of coptis alkaloids","authors":"Yaodong Liu, Junqing Wei, Linqing Zhou, Xingyu Du, Yuankai Yang, Zhehang Wang, Kuibo Lan, Guoxuan Qin","doi":"10.1063/5.0309839","DOIUrl":"https://doi.org/10.1063/5.0309839","url":null,"abstract":"Coptis chinensis (cc) was widely used in traditional Chinese medicine for the treatment of various diseases, and its quality evaluation directly influenced clinical efficacy and safety. Traditional analytical methods, such as chromatographic or mass spectrometric techniques, were limited by high equipment costs and complex operational procedures. Here, a gelatin (Gel) side-gated double-layer field-effect transistor (GGDL-FET) was designed for highly sensitive detection of cc. The electric double-layer (EDL) capacitance of GGDL-FET reached 12.2 μF with 2 wt. % Gel. The superposition effect of electric fields 1 and 2 (E1 and E2) enhanced the gate control capability, thus contributed to a significant increase in channel current (∼374.4%). Furthermore, berberine (BBR) as the main components of cc was first quantified, and the incorporation of BBR increased the ion concentration of Gel electrolyte as well as the EDL capacitance since the quaternary ammonium salt group in its structure produced more positive charges, which enhanced the gate controllability and led to an obvious increase in the channel current. Subsequently, cc samples with varying concentration gradients were introduced into Gel. The resulting changes of the channel current exhibited consistent behavior with BBR alone, demonstrating a concentration-dependent response. The device detected cc with concentrations of 1, 2, and 3 wt. %. Thus, the concentration of BBR in cc could be evaluated by analyzing the changing trend of channel current, which provided a reference for the quality assessment of cc.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"96 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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