Hediyeh Dabbaghi, M. Nematollahi, K. S. Baghbaderani, Parisa Bayatimalayeri, M. Elahinia
NiTi-based high-temperature shape memory alloys (HTSMAs) such as NiTiHf have been utilized in a broad range of applications due to their high strength and work output, as well as, their ability to increase the transformation temperatures (TTs). Recently, additive manufacturing techniques (AM) have been widely used to fabricate complex shape memory alloy components without any major modifications or tooling and has paved the way to tailor the manufacturing and fabrications of microstructure and critical properties of their final parts. NiTi alloys properties such as transformation temperatures can be significantly altered due to oxidation, which can occur during the manufacturing process or post-processing. In this work, the oxidation behavior of Ni-rich NiTi20Hf shape memory alloys, which was fabricated by the selective laser melting (SLM) method, is evaluated. Thermogravimetric analysis (TGA) is used to assess the kinetic behavior of the oxidation at different temperature ranges of 500, 700, and 900 C for 20 hours in the air. After oxidation, to evaluate the microstructure and chemical composition X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS) was conducted. The isothermal oxidation kinetics of conventional NiTi20Hf alloys were studied, and the results were compared to AM samples. Results show a two-stage oxidation rate at which oxidation increased with the high rate at the initial stage. As the oxidation time increased, the oxidation rate gradually decreased. The oxidation behavior of NiTiHf alloys initially obeyed logarithmic rate law and then followed by parabolic rate law. SEM results showed the formation of a multi-layered oxide scale, including TiO2, NiTiO3, and Hf oxide.
{"title":"High-Temperature Oxidation Kinetics of Additively Manufactured NiTiHf","authors":"Hediyeh Dabbaghi, M. Nematollahi, K. S. Baghbaderani, Parisa Bayatimalayeri, M. Elahinia","doi":"10.1115/MSEC2020-8449","DOIUrl":"https://doi.org/10.1115/MSEC2020-8449","url":null,"abstract":"NiTi-based high-temperature shape memory alloys (HTSMAs) such as NiTiHf have been utilized in a broad range of applications due to their high strength and work output, as well as, their ability to increase the transformation temperatures (TTs). Recently, additive manufacturing techniques (AM) have been widely used to fabricate complex shape memory alloy components without any major modifications or tooling and has paved the way to tailor the manufacturing and fabrications of microstructure and critical properties of their final parts. NiTi alloys properties such as transformation temperatures can be significantly altered due to oxidation, which can occur during the manufacturing process or post-processing. In this work, the oxidation behavior of Ni-rich NiTi20Hf shape memory alloys, which was fabricated by the selective laser melting (SLM) method, is evaluated. Thermogravimetric analysis (TGA) is used to assess the kinetic behavior of the oxidation at different temperature ranges of 500, 700, and 900 C for 20 hours in the air. After oxidation, to evaluate the microstructure and chemical composition X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS) was conducted. The isothermal oxidation kinetics of conventional NiTi20Hf alloys were studied, and the results were compared to AM samples. Results show a two-stage oxidation rate at which oxidation increased with the high rate at the initial stage. As the oxidation time increased, the oxidation rate gradually decreased. The oxidation behavior of NiTiHf alloys initially obeyed logarithmic rate law and then followed by parabolic rate law. SEM results showed the formation of a multi-layered oxide scale, including TiO2, NiTiO3, and Hf oxide.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"223 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85937469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Power-conversion efficiency is a critical factor for the wider adoption of solar-cell modules. Thin-film solar cells are cheap and easy to manufacture, but their efficiencies are low compared to crystalline-silicon solar cells and need to be improved. A thin-film solar cell with two absorber layers (instead of only one), with bandgap energy graded in both, can capture solar photons in a wider spectral range. With a 300-nm-thick CIGS~absorber layer and an 870-nm-thick CZTSSe~absorber layer, an efficiency of $34.45%$ is predicted by a detailed optoelectronic model, provided that the grading of bandgap energy is optimal in both absorber layers.
{"title":"Double-absorber thin-film solar cell with 34% efficiency","authors":"Faiz Ahmad, A. Lakhtakia, P. Monk","doi":"10.1063/5.0017916","DOIUrl":"https://doi.org/10.1063/5.0017916","url":null,"abstract":"Power-conversion efficiency is a critical factor for the wider adoption of solar-cell modules. Thin-film solar cells are cheap and easy to manufacture, but their efficiencies are low compared to crystalline-silicon solar cells and need to be improved. A thin-film solar cell with two absorber layers (instead of only one), with bandgap energy graded in both, can capture solar photons in a wider spectral range. With a 300-nm-thick CIGS~absorber layer and an 870-nm-thick CZTSSe~absorber layer, an efficiency of $34.45%$ is predicted by a detailed optoelectronic model, provided that the grading of bandgap energy is optimal in both absorber layers.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86141336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-09DOI: 10.1103/PHYSREVMATERIALS.4.104605
A. Healey, Alastair Stacey, Alastair Stacey, Brett C. Johnson, D. A. Broadway, T. Teraji, David A. Simpson, J. Tetienne, L. Hollenberg
Thin layers of near-surface nitrogen-vacancy (NV) defects in diamond substrates are the workhorse of NV-based widefield magnetic microscopy, which has applications in physics, geology and biology. Several methods exist to create such NV layers, which generally involve incorporating nitrogen atoms (N) and vacancies (V) into the diamond through growth and/or irradiation. While there have been detailed studies of individual methods, a direct side-by-side experimental comparison of the resulting magnetic sensitivities is still missing. Here we characterise, at room and cryogenic temperatures, $approx100$ nm thick NV layers fabricated via three different methods: 1) low-energy carbon irradiation of N-rich high-pressure high-temperature (HPHT) diamond, 2) carbon irradiation of $delta$-doped chemical vapour deposition (CVD) diamond, 3) low-energy N$^+$ or CN$^-$ implantation into N-free CVD diamond. Despite significant variability within each method, we find that the best HPHT samples yield similar magnetic sensitivities (within a factor 2 on average) to our $delta$-doped samples, of $<2$~$mu$T Hz$^{-1/2}$ for DC magnetic fields and $<100$~nT Hz$^{-1/2}$ for AC fields (for a $400$~nm~$times~400$~nm pixel), while the N$^+$ and CN$^-$ implanted samples exhibit an inferior sensitivity by a factor 2-5, at both room and low temperature. We also examine the crystal lattice strain caused by the respective methods and discuss the implications this has for widefield NV imaging. The pros and cons of each method, and potential future improvements, are discussed. This study highlights that low-energy irradiation of HPHT diamond, despite its relative simplicity and low cost, is a competitive method to create thin NV layers for widefield magnetic imaging.
金刚石衬底近表面氮空位(NV)缺陷的薄层是基于NV的宽视场磁显微镜的主要工作，在物理、地质和生物等领域都有应用。有几种方法可以制造这种NV层，通常是通过生长和/或辐照将氮原子(N)和空位(V)结合到金刚石中。虽然已经对个别方法进行了详细的研究，但对所得到的磁灵敏度进行直接的并排实验比较仍然缺失。在室温和低温下，我们通过三种不同的方法制备了$approx100$ nm厚的NV层:1)低能碳辐照富N高压高温(HPHT)金刚石，2)碳辐照$delta$掺杂化学气相沉积(CVD)金刚石，3)低能N $^+$或CN $^-$注入无N CVD金刚石。尽管每种方法都有显著的差异，但我们发现最好的HPHT样品与我们的$delta$掺杂样品产生相似的磁灵敏度(平均在2因子内)，直流磁场为$<2$$mu$ T Hz $^{-1/2}$，交流磁场为$<100$ nT Hz $^{-1/2}$(对于$400$ nm $times~400$ nm像素)。而N $^+$和CN $^-$植入样品在室温和低温下的灵敏度都差2-5倍。我们还研究了由各自方法引起的晶格应变，并讨论了这对宽视场NV成像的影响。讨论了每种方法的优缺点以及未来可能的改进。这项研究强调，尽管HPHT金刚石的低能量辐照相对简单且成本低，但它是一种有竞争力的方法，可以为宽场磁成像创建薄的NV层。
{"title":"Comparison of different methods of nitrogen-vacancy layer formation in diamond for wide-field quantum microscopy","authors":"A. Healey, Alastair Stacey, Alastair Stacey, Brett C. Johnson, D. A. Broadway, T. Teraji, David A. Simpson, J. Tetienne, L. Hollenberg","doi":"10.1103/PHYSREVMATERIALS.4.104605","DOIUrl":"https://doi.org/10.1103/PHYSREVMATERIALS.4.104605","url":null,"abstract":"Thin layers of near-surface nitrogen-vacancy (NV) defects in diamond substrates are the workhorse of NV-based widefield magnetic microscopy, which has applications in physics, geology and biology. Several methods exist to create such NV layers, which generally involve incorporating nitrogen atoms (N) and vacancies (V) into the diamond through growth and/or irradiation. While there have been detailed studies of individual methods, a direct side-by-side experimental comparison of the resulting magnetic sensitivities is still missing. Here we characterise, at room and cryogenic temperatures, $approx100$ nm thick NV layers fabricated via three different methods: 1) low-energy carbon irradiation of N-rich high-pressure high-temperature (HPHT) diamond, 2) carbon irradiation of $delta$-doped chemical vapour deposition (CVD) diamond, 3) low-energy N$^+$ or CN$^-$ implantation into N-free CVD diamond. Despite significant variability within each method, we find that the best HPHT samples yield similar magnetic sensitivities (within a factor 2 on average) to our $delta$-doped samples, of $<2$~$mu$T Hz$^{-1/2}$ for DC magnetic fields and $<100$~nT Hz$^{-1/2}$ for AC fields (for a $400$~nm~$times~400$~nm pixel), while the N$^+$ and CN$^-$ implanted samples exhibit an inferior sensitivity by a factor 2-5, at both room and low temperature. We also examine the crystal lattice strain caused by the respective methods and discuss the implications this has for widefield NV imaging. The pros and cons of each method, and potential future improvements, are discussed. This study highlights that low-energy irradiation of HPHT diamond, despite its relative simplicity and low cost, is a competitive method to create thin NV layers for widefield magnetic imaging.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"43 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85128204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-08DOI: 10.1016/J.OPTMAT.2021.110924
Jose Araujo, A. Monte, R. Lora-Serrano, W. Iwamoto, A. Antunes, O. Brener, M. Foschini
{"title":"On the quantitative optical properties of Au nanoparticles embedded in biological tissue phantoms","authors":"Jose Araujo, A. Monte, R. Lora-Serrano, W. Iwamoto, A. Antunes, O. Brener, M. Foschini","doi":"10.1016/J.OPTMAT.2021.110924","DOIUrl":"https://doi.org/10.1016/J.OPTMAT.2021.110924","url":null,"abstract":"","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78003141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-05DOI: 10.1103/PhysRevApplied.15.054013
Meiyin Yang, Yanru Li, Jun Luo, Yongcheng Deng, N. Zhang, Xueying Zhang, Shaoxin Li, Yan Cui, Peiyue Yu, Tengzhi Yang, Y. Sheng, Sumei Wang, Jing Xu, Chao Zhao, Kaiyou Wang
We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (constants of Dzyaloshinskii-Moriya interaction over exchange interaction). To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting the D/A of Ta/Pt/Co/Ta multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed area, which is due to the current induced Neel wall motion and a strong exchange coupling at this interface.
{"title":"All-Linear Multistate Magnetic Switching Induced by Electrical Current","authors":"Meiyin Yang, Yanru Li, Jun Luo, Yongcheng Deng, N. Zhang, Xueying Zhang, Shaoxin Li, Yan Cui, Peiyue Yu, Tengzhi Yang, Y. Sheng, Sumei Wang, Jing Xu, Chao Zhao, Kaiyou Wang","doi":"10.1103/PhysRevApplied.15.054013","DOIUrl":"https://doi.org/10.1103/PhysRevApplied.15.054013","url":null,"abstract":"We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (constants of Dzyaloshinskii-Moriya interaction over exchange interaction). To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting the D/A of Ta/Pt/Co/Ta multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed area, which is due to the current induced Neel wall motion and a strong exchange coupling at this interface.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"42 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79318690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Kudra, J. Biznárová, F. Roudsari, Jonathan Burnett, D. Niepce, Simone Gasparinetti, Björn Wickman, P. Delsing
We present a comprehensive study of internal quality factors in superconducting stub-geometry 3-dimensional cavities made of aluminum. We use wet etching, annealing and electrochemichal polishing to improve the as machined quality factor. We find that the dominant loss channel is split between two-level system loss and an unknown source with 60:40 proportion. A total of 17 cavities of different purity, resonance frequency and size were studied. Our treatment results in reproducible cavities, with ten of them showing internal quality factors above 80 million at a power corresponding to an average of a single photon in the cavity. The best cavity has an internal quality factor of 115 million at single photon level.
{"title":"High quality three-dimensional aluminum microwave cavities","authors":"M. Kudra, J. Biznárová, F. Roudsari, Jonathan Burnett, D. Niepce, Simone Gasparinetti, Björn Wickman, P. Delsing","doi":"10.1063/5.0016463","DOIUrl":"https://doi.org/10.1063/5.0016463","url":null,"abstract":"We present a comprehensive study of internal quality factors in superconducting stub-geometry 3-dimensional cavities made of aluminum. We use wet etching, annealing and electrochemichal polishing to improve the as machined quality factor. We find that the dominant loss channel is split between two-level system loss and an unknown source with 60:40 proportion. A total of 17 cavities of different purity, resonance frequency and size were studied. Our treatment results in reproducible cavities, with ten of them showing internal quality factors above 80 million at a power corresponding to an average of a single photon in the cavity. The best cavity has an internal quality factor of 115 million at single photon level.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"47 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77943704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present the theoretical basis for a new photoemission regime, transient work function gating (TWFG), that temporally and energetically gates photoemission and produces near-threshold photoelectrons with thermally limited emittance, percent-level quantum efficiency, and control over temporal coherence. The technique consists of actively gating the work function of a generalized photocathode using non-ionizing long-wavelength optical field to produce an adiabatic modulation of the carrier density at their surface. We examine TWFG as a means to circumvent the long-standing trade-off between low emittance and high quantum efficiency, untethered to particle source or photocathode specifics. TWFG promises new opportunities in photoemission physics for next generation electron and accelerator-based x-ray photon sources.
{"title":"Transient work function gating: A new photoemission regime","authors":"S. Carbajo","doi":"10.1063/5.0011737","DOIUrl":"https://doi.org/10.1063/5.0011737","url":null,"abstract":"We present the theoretical basis for a new photoemission regime, transient work function gating (TWFG), that temporally and energetically gates photoemission and produces near-threshold photoelectrons with thermally limited emittance, percent-level quantum efficiency, and control over temporal coherence. The technique consists of actively gating the work function of a generalized photocathode using non-ionizing long-wavelength optical field to produce an adiabatic modulation of the carrier density at their surface. We examine TWFG as a means to circumvent the long-standing trade-off between low emittance and high quantum efficiency, untethered to particle source or photocathode specifics. TWFG promises new opportunities in photoemission physics for next generation electron and accelerator-based x-ray photon sources.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"90 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80398161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-02DOI: 10.1016/j.mtadv.2020.100101
Y. Liu, L. Pu, Y. Yang, Q. He, Z. Zhou, C. Tan, X. Zhao, Q. Zhang, K. Tu
{"title":"A high-entropy alloy as very low melting point solder for advanced electronic packaging","authors":"Y. Liu, L. Pu, Y. Yang, Q. He, Z. Zhou, C. Tan, X. Zhao, Q. Zhang, K. Tu","doi":"10.1016/j.mtadv.2020.100101","DOIUrl":"https://doi.org/10.1016/j.mtadv.2020.100101","url":null,"abstract":"","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"91 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86243404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-02DOI: 10.1103/physrevapplied.14.024017
G. Carlse, K. Borsos, H. Beica, T. Vacheresse, A. Pouliot, J. Pérez-García, A. Vorozcovs, B. Barron, S. Jackson, L. Marmet, A. Kumarakrishnan
We describe a new method for the rapid determination of the mass of particles confined in a free-space optical dipole-force trap. The technique relies on direct imaging of drop-and-restore experiments without the need for a vacuum environment. In these experiments, the trapping light is rapidly shuttered with an acousto-optic modulator causing the particle to be released from and subsequently recaptured by the trapping force. The trajectories of both the falls and restorations, imaged using a high-speed CMOS sensor, are combined to determine the particle mass. We corroborate these measurements using an analysis of position autocorrelation functions of the trapped particles. We report a statistical uncertainty of less than 2% for masses on the order of $5times10^{-14}$ kg using a data acquisition time of approximately 90 seconds.
{"title":"Technique for Rapid Mass Determination of Airborne Microparticles Based on Release and Recapture from an Optical Dipole Force Trap","authors":"G. Carlse, K. Borsos, H. Beica, T. Vacheresse, A. Pouliot, J. Pérez-García, A. Vorozcovs, B. Barron, S. Jackson, L. Marmet, A. Kumarakrishnan","doi":"10.1103/physrevapplied.14.024017","DOIUrl":"https://doi.org/10.1103/physrevapplied.14.024017","url":null,"abstract":"We describe a new method for the rapid determination of the mass of particles confined in a free-space optical dipole-force trap. The technique relies on direct imaging of drop-and-restore experiments without the need for a vacuum environment. In these experiments, the trapping light is rapidly shuttered with an acousto-optic modulator causing the particle to be released from and subsequently recaptured by the trapping force. The trajectories of both the falls and restorations, imaged using a high-speed CMOS sensor, are combined to determine the particle mass. We corroborate these measurements using an analysis of position autocorrelation functions of the trapped particles. We report a statistical uncertainty of less than 2% for masses on the order of $5times10^{-14}$ kg using a data acquisition time of approximately 90 seconds.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75243428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The ability to achieve strong-coupling has made cavity-magnon systems an exciting platform for the development of hybrid quantum systems and the investigation of fundamental problems in physics. Unfortunately, current experimental realizations are constrained to operate at a single frequency, defined by the geometry of the microwave cavity. In this article we realize a highly-tunable, cryogenic, microwave cavity strongly coupled to magnetic spins. The cavity can be tuned in situ by up to 1.5 GHz, approximately 15% of its original 10 GHz resonance frequency. Moreover, this system remains within the strong-coupling regime at all frequencies with a cooperativity of approximately 800.
{"title":"Strong magnon–photon coupling within a tunable cryogenic microwave cavity","authors":"C. Potts, J. Davis","doi":"10.1063/5.0015660","DOIUrl":"https://doi.org/10.1063/5.0015660","url":null,"abstract":"The ability to achieve strong-coupling has made cavity-magnon systems an exciting platform for the development of hybrid quantum systems and the investigation of fundamental problems in physics. Unfortunately, current experimental realizations are constrained to operate at a single frequency, defined by the geometry of the microwave cavity. In this article we realize a highly-tunable, cryogenic, microwave cavity strongly coupled to magnetic spins. The cavity can be tuned in situ by up to 1.5 GHz, approximately 15% of its original 10 GHz resonance frequency. Moreover, this system remains within the strong-coupling regime at all frequencies with a cooperativity of approximately 800.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78539252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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