Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400761
V. Banu, P. Godignon, X. Jordà, M. Alexandru, J. Millán
This work presents thermal analysis results of surge current test performed on pressed-pack encapsulated SiC Schottky Diodes. An original method for temperature evaluation during high current pulses, based on behavioural SPICE models, was used to approach the analysis. Silicon Carbide (SiC) is one of the most adequate wide bandgap (WBG) material for manufacturing high temperature and high power electronics. However, the actual generation of commercially available SiC power diodes (Schottky and JBS) shows a maximum junction temperature of only 175°C. This important derating of the SiC devices, which theoretically are capable to sustain much higher temperatures, is due to the packaging limitation. The aim of our investigations is to overcome the actual limitations of SiC device packaging and to obtain reliable SiC devices able to operate at temperatures over 300°C.
{"title":"SiC Schottky Diode surge current analysis and application design using behavioral SPICE models","authors":"V. Banu, P. Godignon, X. Jordà, M. Alexandru, J. Millán","doi":"10.1109/SMICND.2012.6400761","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400761","url":null,"abstract":"This work presents thermal analysis results of surge current test performed on pressed-pack encapsulated SiC Schottky Diodes. An original method for temperature evaluation during high current pulses, based on behavioural SPICE models, was used to approach the analysis. Silicon Carbide (SiC) is one of the most adequate wide bandgap (WBG) material for manufacturing high temperature and high power electronics. However, the actual generation of commercially available SiC power diodes (Schottky and JBS) shows a maximum junction temperature of only 175°C. This important derating of the SiC devices, which theoretically are capable to sustain much higher temperatures, is due to the packaging limitation. The aim of our investigations is to overcome the actual limitations of SiC device packaging and to obtain reliable SiC devices able to operate at temperatures over 300°C.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"128 1","pages":"359-362"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91052425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400689
C. Palade, A. Lepadatu, I. Stavarache, A. Maraloiu, V. Teodorescu, M. Ciurea
This paper reports on the conduction mechanisms in amorphous SiO2 films with embedded Ge nanoparticles. For this, measurements of current-temperature and current-voltage were employed and correlated with the microstructure results obtained from transmission electron microscopy (TEM). TEM images reveal that our films contain big Ge nanoparticles with low density and small Ge nanoparticles with high density, the last ones being the only responsible for the electrical transport. Two transport mechanisms were found at low and high temperature respectively, namely hopping on localized states in a band near Fermi level and charge excitation to the extended states at mobility edge.
{"title":"Transport mechanisms in SiO2 films with embedded Germanium nanoparticles","authors":"C. Palade, A. Lepadatu, I. Stavarache, A. Maraloiu, V. Teodorescu, M. Ciurea","doi":"10.1109/SMICND.2012.6400689","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400689","url":null,"abstract":"This paper reports on the conduction mechanisms in amorphous SiO2 films with embedded Ge nanoparticles. For this, measurements of current-temperature and current-voltage were employed and correlated with the microstructure results obtained from transmission electron microscopy (TEM). TEM images reveal that our films contain big Ge nanoparticles with low density and small Ge nanoparticles with high density, the last ones being the only responsible for the electrical transport. Two transport mechanisms were found at low and high temperature respectively, namely hopping on localized states in a band near Fermi level and charge excitation to the extended states at mobility edge.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"4 1","pages":"91-94"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73052138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400756
C. Stănescu
The paper presents a new circuit technique intended to improve the transient load regulation in dual-OTA CMOS LDOs, especially for low input and output voltages. The duration of overshoot that appears during fast transient load regulation is made quite small, improving the recovery of the output voltage when the output current is swept from maximum to minimum within 100ns. The presented technique is simple and needs a small number of additional components. The additional bias current is only few μA.
{"title":"A new circuit technique for improving transient load regulation in low-voltage CMOS LDOs","authors":"C. Stănescu","doi":"10.1109/SMICND.2012.6400756","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400756","url":null,"abstract":"The paper presents a new circuit technique intended to improve the transient load regulation in dual-OTA CMOS LDOs, especially for low input and output voltages. The duration of overshoot that appears during fast transient load regulation is made quite small, improving the recovery of the output voltage when the output current is swept from maximum to minimum within 100ns. The presented technique is simple and needs a small number of additional components. The additional bias current is only few μA.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"54 1","pages":"373-376"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77360766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400653
R. Malmqvist, C. Samuelsson, D. Dancila, S. Reyaz, M. Kaynak, A. Rydberg
This paper presents the circuit designs and results of a wideband power detector and an on-chip slot antenna fabricated in a 0.25 μm SiGe BiCMOS process. The W-band SiGe detector has close to 20 GHz of operational bandwidth (s11≤-10 dB at 75-92 GHz) and a responsivity of 3-5kV/W (NEP = 10-16 pW/Hz1/2) at 83-94 GHz. The SiGe on-chip slot antenna design covers a wide bandwidth (70-110 GHz) with 2 dBi of simulated gain at 94 GHz. The realised wideband SiGe BiCMOS power detector and on-chip antenna are targeting highly integrated single-chip RF front-ends for broadband sensing applications up to 110GHz.
{"title":"Design and test results of a wideband sige detector and on-chip slot antenna for W-band sensing applications","authors":"R. Malmqvist, C. Samuelsson, D. Dancila, S. Reyaz, M. Kaynak, A. Rydberg","doi":"10.1109/SMICND.2012.6400653","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400653","url":null,"abstract":"This paper presents the circuit designs and results of a wideband power detector and an on-chip slot antenna fabricated in a 0.25 μm SiGe BiCMOS process. The W-band SiGe detector has close to 20 GHz of operational bandwidth (s11≤-10 dB at 75-92 GHz) and a responsivity of 3-5kV/W (NEP = 10-16 pW/Hz1/2) at 83-94 GHz. The SiGe on-chip slot antenna design covers a wide bandwidth (70-110 GHz) with 2 dBi of simulated gain at 94 GHz. The realised wideband SiGe BiCMOS power detector and on-chip antenna are targeting highly integrated single-chip RF front-ends for broadband sensing applications up to 110GHz.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"205-208"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84085845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400743
G. Pristavu, C. Bartholomeusz, V. Anghel, G. Brezeanu
A solution for obtaining an exponential variation of time versus input voltage of a time-modulating circuit is investigated, implemented and its performances are measured. Most time-modulating circuits produce a delay that is linearly dependent on the input voltage. This paper proposes a new method of controlling the time delay output by making it vary exponentially with the input voltage. This solution is especially useful in aplications where the time-delay is constantly modulated by a prior error amplifier.
{"title":"Time modulation — The exponential way","authors":"G. Pristavu, C. Bartholomeusz, V. Anghel, G. Brezeanu","doi":"10.1109/SMICND.2012.6400743","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400743","url":null,"abstract":"A solution for obtaining an exponential variation of time versus input voltage of a time-modulating circuit is investigated, implemented and its performances are measured. Most time-modulating circuits produce a delay that is linearly dependent on the input voltage. This paper proposes a new method of controlling the time delay output by making it vary exponentially with the input voltage. This solution is especially useful in aplications where the time-delay is constantly modulated by a prior error amplifier.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"56 1","pages":"419-422"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84151196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400744
T. Sandu, V. Buiculescu
The near-field enhancement of rod-like nanoantenna is studied in two variants: in the electrostatic approximation and in a fully retarded approach. A boundary integral equation (BIE) method has been used in the electrostatic approximation. The BIE method allows a transparent eigenmode decomposition of both the far-field and near-field, which are valid as long as the size of the nanoantenna is much smaller than every representative light wavelength. Our near-field calculations show that for a rod-like nanoantenna with a length below 100 nm the electrostatic and the fully retarded results are in good agreement with each other.
{"title":"Near-field enhancement of a rod-like nanoantenna: Elctrostatic versus fully retarded results","authors":"T. Sandu, V. Buiculescu","doi":"10.1109/SMICND.2012.6400744","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400744","url":null,"abstract":"The near-field enhancement of rod-like nanoantenna is studied in two variants: in the electrostatic approximation and in a fully retarded approach. A boundary integral equation (BIE) method has been used in the electrostatic approximation. The BIE method allows a transparent eigenmode decomposition of both the far-field and near-field, which are valid as long as the size of the nanoantenna is much smaller than every representative light wavelength. Our near-field calculations show that for a rod-like nanoantenna with a length below 100 nm the electrostatic and the fully retarded results are in good agreement with each other.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"113 1","pages":"415-418"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79828673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400641
C. Bălan, C. Marculescu, C. Iliescu
The application presented in this paper is based on a non-invasive method for velocity measurement in microchannels. The investigation focuses on the separation phenomena and the manifestations of vortical structures in a Y-bifurcation with a square cross-section. A micro-PIV measurement system is used to obtain velocity profiles distributions in the primary flow domain and in the secondary ones (vortex zones). The experimental data is compared to numerical simulations performed with FLUENT™ code in 3D geometries. Calculated flow patterns are found to be consistent with experiment manifestations, offering useful insights on the vortical structures in the analysed applications.
{"title":"Micro-PIV measurements for hydrodynamic characterizations of microfluidic flows","authors":"C. Bălan, C. Marculescu, C. Iliescu","doi":"10.1109/SMICND.2012.6400641","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400641","url":null,"abstract":"The application presented in this paper is based on a non-invasive method for velocity measurement in microchannels. The investigation focuses on the separation phenomena and the manifestations of vortical structures in a Y-bifurcation with a square cross-section. A micro-PIV measurement system is used to obtain velocity profiles distributions in the primary flow domain and in the secondary ones (vortex zones). The experimental data is compared to numerical simulations performed with FLUENT™ code in 3D geometries. Calculated flow patterns are found to be consistent with experiment manifestations, offering useful insights on the vortical structures in the analysed applications.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"274-250"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77314253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400669
M. Brezeanu, V. Dumitru, S. Costea, S. Z. Ali, F. Udrea, M. Gologanu, C. Bostan, I. Georgescu, V. Avramescu, O. Buiu
This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar).
{"title":"SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration","authors":"M. Brezeanu, V. Dumitru, S. Costea, S. Z. Ali, F. Udrea, M. Gologanu, C. Bostan, I. Georgescu, V. Avramescu, O. Buiu","doi":"10.1109/SMICND.2012.6400669","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400669","url":null,"abstract":"This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"6 2 1","pages":"153-156"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78342454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400790
T. Potlog
The dark alternating current (ac) parameters of ZnSe/ZnTe/CdTe thin films heterostructures are measured at different temperatures using the impedance spectroscopy. The real and imaginary parts of the complex impedance are changed with the frequency and temperature. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the heterostructure was analyzed by the Cole-Cole plots. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.
{"title":"Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions","authors":"T. Potlog","doi":"10.1109/SMICND.2012.6400790","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400790","url":null,"abstract":"The dark alternating current (ac) parameters of ZnSe/ZnTe/CdTe thin films heterostructures are measured at different temperatures using the impedance spectroscopy. The real and imaginary parts of the complex impedance are changed with the frequency and temperature. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the heterostructure was analyzed by the Cole-Cole plots. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"28 1","pages":"261-264"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82034581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400655
A. Bunea, D. Neculoiu, P. Calmon, A. Takacs
In this paper we present the electromagnetic modeling, fabrication and experimental results of a on-chip 2×1 folded slot dipole antenna array manufactured through silicon micromachining, working in the 60 GHz band. The measurements are in very good agreement with the simulations and demonstrate a large working band of ~20% (54-65 GHz) for a return loss better than 10 dB.
{"title":"Micromachined front-end for 60 GHz applications","authors":"A. Bunea, D. Neculoiu, P. Calmon, A. Takacs","doi":"10.1109/SMICND.2012.6400655","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400655","url":null,"abstract":"In this paper we present the electromagnetic modeling, fabrication and experimental results of a on-chip 2×1 folded slot dipole antenna array manufactured through silicon micromachining, working in the 60 GHz band. The measurements are in very good agreement with the simulations and demonstrate a large working band of ~20% (54-65 GHz) for a return loss better than 10 dB.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"3 1","pages":"197-200"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82046599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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