Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400734
L. Teodorescu, F. Draghici, G. Brezeanu, I. Rusu
In this paper it is described a design technique used to collect and analyse power devices characteristics in high temperatures domain. Following this technique, a complete hardware and software platform is built for thermal characterization of power devices.
{"title":"High temperature characterization system for silicon carbide devices","authors":"L. Teodorescu, F. Draghici, G. Brezeanu, I. Rusu","doi":"10.1109/SMICND.2012.6400734","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400734","url":null,"abstract":"In this paper it is described a design technique used to collect and analyse power devices characteristics in high temperatures domain. Following this technique, a complete hardware and software platform is built for thermal characterization of power devices.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"18 1","pages":"449-452"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91495546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400690
R. Buiculescu, N. Chaniotakis
In this paper, highly luminescent core/shell CdSe/ZnS quantum dots have been used in the construction of two sensing systems for the detection of oligonucleotide hybridization and enzymatic reaction by covalent binding the biomolecules directly to the surface of the quantum dots. It is shown that the oligonucleotide-modified quantum dots have proven to be able to detect large sequences of mismatched bases through the hybridization process, while the system based on biosilica encapsulated enzyme-modified quantum dots was found to be suitable for monitoring low substrate concentrations in solution and with a storage lifetime of more than 2 months.
{"title":"Semiconductor quantum dots as highly effective biosensing tools","authors":"R. Buiculescu, N. Chaniotakis","doi":"10.1109/SMICND.2012.6400690","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400690","url":null,"abstract":"In this paper, highly luminescent core/shell CdSe/ZnS quantum dots have been used in the construction of two sensing systems for the detection of oligonucleotide hybridization and enzymatic reaction by covalent binding the biomolecules directly to the surface of the quantum dots. It is shown that the oligonucleotide-modified quantum dots have proven to be able to detect large sequences of mismatched bases through the hybridization process, while the system based on biosilica encapsulated enzyme-modified quantum dots was found to be suitable for monitoring low substrate concentrations in solution and with a storage lifetime of more than 2 months.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"16 1","pages":"87-90"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87388109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400669
M. Brezeanu, V. Dumitru, S. Costea, S. Z. Ali, F. Udrea, M. Gologanu, C. Bostan, I. Georgescu, V. Avramescu, O. Buiu
This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar).
{"title":"SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration","authors":"M. Brezeanu, V. Dumitru, S. Costea, S. Z. Ali, F. Udrea, M. Gologanu, C. Bostan, I. Georgescu, V. Avramescu, O. Buiu","doi":"10.1109/SMICND.2012.6400669","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400669","url":null,"abstract":"This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"6 2 1","pages":"153-156"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78342454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400756
C. Stănescu
The paper presents a new circuit technique intended to improve the transient load regulation in dual-OTA CMOS LDOs, especially for low input and output voltages. The duration of overshoot that appears during fast transient load regulation is made quite small, improving the recovery of the output voltage when the output current is swept from maximum to minimum within 100ns. The presented technique is simple and needs a small number of additional components. The additional bias current is only few μA.
{"title":"A new circuit technique for improving transient load regulation in low-voltage CMOS LDOs","authors":"C. Stănescu","doi":"10.1109/SMICND.2012.6400756","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400756","url":null,"abstract":"The paper presents a new circuit technique intended to improve the transient load regulation in dual-OTA CMOS LDOs, especially for low input and output voltages. The duration of overshoot that appears during fast transient load regulation is made quite small, improving the recovery of the output voltage when the output current is swept from maximum to minimum within 100ns. The presented technique is simple and needs a small number of additional components. The additional bias current is only few μA.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"54 1","pages":"373-376"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77360766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400641
C. Bălan, C. Marculescu, C. Iliescu
The application presented in this paper is based on a non-invasive method for velocity measurement in microchannels. The investigation focuses on the separation phenomena and the manifestations of vortical structures in a Y-bifurcation with a square cross-section. A micro-PIV measurement system is used to obtain velocity profiles distributions in the primary flow domain and in the secondary ones (vortex zones). The experimental data is compared to numerical simulations performed with FLUENT™ code in 3D geometries. Calculated flow patterns are found to be consistent with experiment manifestations, offering useful insights on the vortical structures in the analysed applications.
{"title":"Micro-PIV measurements for hydrodynamic characterizations of microfluidic flows","authors":"C. Bălan, C. Marculescu, C. Iliescu","doi":"10.1109/SMICND.2012.6400641","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400641","url":null,"abstract":"The application presented in this paper is based on a non-invasive method for velocity measurement in microchannels. The investigation focuses on the separation phenomena and the manifestations of vortical structures in a Y-bifurcation with a square cross-section. A micro-PIV measurement system is used to obtain velocity profiles distributions in the primary flow domain and in the secondary ones (vortex zones). The experimental data is compared to numerical simulations performed with FLUENT™ code in 3D geometries. Calculated flow patterns are found to be consistent with experiment manifestations, offering useful insights on the vortical structures in the analysed applications.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"274-250"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77314253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400744
T. Sandu, V. Buiculescu
The near-field enhancement of rod-like nanoantenna is studied in two variants: in the electrostatic approximation and in a fully retarded approach. A boundary integral equation (BIE) method has been used in the electrostatic approximation. The BIE method allows a transparent eigenmode decomposition of both the far-field and near-field, which are valid as long as the size of the nanoantenna is much smaller than every representative light wavelength. Our near-field calculations show that for a rod-like nanoantenna with a length below 100 nm the electrostatic and the fully retarded results are in good agreement with each other.
{"title":"Near-field enhancement of a rod-like nanoantenna: Elctrostatic versus fully retarded results","authors":"T. Sandu, V. Buiculescu","doi":"10.1109/SMICND.2012.6400744","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400744","url":null,"abstract":"The near-field enhancement of rod-like nanoantenna is studied in two variants: in the electrostatic approximation and in a fully retarded approach. A boundary integral equation (BIE) method has been used in the electrostatic approximation. The BIE method allows a transparent eigenmode decomposition of both the far-field and near-field, which are valid as long as the size of the nanoantenna is much smaller than every representative light wavelength. Our near-field calculations show that for a rod-like nanoantenna with a length below 100 nm the electrostatic and the fully retarded results are in good agreement with each other.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"113 1","pages":"415-418"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79828673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400697
L. Nicu, T. Leichlé
Despite the fact that bio-nano-electromechanical systems (bioNEMS) are considered as the ultimate mechanical systems for complex biosensing, one still has to demonstrate that highly sensitive nanomechanical elements can be readily mass-produced in terms of both fabrication and biofunctionalization technologies. In this paper, we discuss a fundamental change of technological paradigm based on nanoprinting-techniques which implementation will successfully address all the bioNEMS-related issues at once. The choice of the nanoprinting-based techniques as a generic way to both fabricating (by transfer-printing) and functionalizing (by nano-contact printing) ultra-dense arrays of NEMS (thousands per cm2) could lead to easy-to implement, flexible recipes for front-end and back-end processing while avoiding a long series of technological steps which most of the times dramatically impacts the yield, and subsequently the cost of fabrication.
{"title":"Nanoelectromechanical systems for biology: Where to go from now?","authors":"L. Nicu, T. Leichlé","doi":"10.1109/SMICND.2012.6400697","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400697","url":null,"abstract":"Despite the fact that bio-nano-electromechanical systems (bioNEMS) are considered as the ultimate mechanical systems for complex biosensing, one still has to demonstrate that highly sensitive nanomechanical elements can be readily mass-produced in terms of both fabrication and biofunctionalization technologies. In this paper, we discuss a fundamental change of technological paradigm based on nanoprinting-techniques which implementation will successfully address all the bioNEMS-related issues at once. The choice of the nanoprinting-based techniques as a generic way to both fabricating (by transfer-printing) and functionalizing (by nano-contact printing) ultra-dense arrays of NEMS (thousands per cm2) could lead to easy-to implement, flexible recipes for front-end and back-end processing while avoiding a long series of technological steps which most of the times dramatically impacts the yield, and subsequently the cost of fabrication.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"126 1","pages":"51-56"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81331825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400681
A. Rădoi, M. Dragoman, A. Cismaru, G. Konstantinidis, D. Dragoman
Light-harvesting structures were developed using a coplanar waveguide microfabricated on high-resistivity n-Si, the central electrode consisting of an interdigitated configuration formed by two different metals. Each structure was drop casted using an aqueous dispersion of gold sputtered graphene and was thereafter subjected to I-V investigations under light excitation from UV up to IR domains. Also, the herein described device can act as a wideband photodetector with relatively good responsivity if biased.
{"title":"Light-harvesting using metallic interdigitated structures modified with Au sputtered graphene","authors":"A. Rădoi, M. Dragoman, A. Cismaru, G. Konstantinidis, D. Dragoman","doi":"10.1109/SMICND.2012.6400681","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400681","url":null,"abstract":"Light-harvesting structures were developed using a coplanar waveguide microfabricated on high-resistivity n-Si, the central electrode consisting of an interdigitated configuration formed by two different metals. Each structure was drop casted using an aqueous dispersion of gold sputtered graphene and was thereafter subjected to I-V investigations under light excitation from UV up to IR domains. Also, the herein described device can act as a wideband photodetector with relatively good responsivity if biased.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"24 1","pages":"117-120"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85847541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400653
R. Malmqvist, C. Samuelsson, D. Dancila, S. Reyaz, M. Kaynak, A. Rydberg
This paper presents the circuit designs and results of a wideband power detector and an on-chip slot antenna fabricated in a 0.25 μm SiGe BiCMOS process. The W-band SiGe detector has close to 20 GHz of operational bandwidth (s11≤-10 dB at 75-92 GHz) and a responsivity of 3-5kV/W (NEP = 10-16 pW/Hz1/2) at 83-94 GHz. The SiGe on-chip slot antenna design covers a wide bandwidth (70-110 GHz) with 2 dBi of simulated gain at 94 GHz. The realised wideband SiGe BiCMOS power detector and on-chip antenna are targeting highly integrated single-chip RF front-ends for broadband sensing applications up to 110GHz.
{"title":"Design and test results of a wideband sige detector and on-chip slot antenna for W-band sensing applications","authors":"R. Malmqvist, C. Samuelsson, D. Dancila, S. Reyaz, M. Kaynak, A. Rydberg","doi":"10.1109/SMICND.2012.6400653","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400653","url":null,"abstract":"This paper presents the circuit designs and results of a wideband power detector and an on-chip slot antenna fabricated in a 0.25 μm SiGe BiCMOS process. The W-band SiGe detector has close to 20 GHz of operational bandwidth (s11≤-10 dB at 75-92 GHz) and a responsivity of 3-5kV/W (NEP = 10-16 pW/Hz1/2) at 83-94 GHz. The SiGe on-chip slot antenna design covers a wide bandwidth (70-110 GHz) with 2 dBi of simulated gain at 94 GHz. The realised wideband SiGe BiCMOS power detector and on-chip antenna are targeting highly integrated single-chip RF front-ends for broadband sensing applications up to 110GHz.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"205-208"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84085845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400790
T. Potlog
The dark alternating current (ac) parameters of ZnSe/ZnTe/CdTe thin films heterostructures are measured at different temperatures using the impedance spectroscopy. The real and imaginary parts of the complex impedance are changed with the frequency and temperature. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the heterostructure was analyzed by the Cole-Cole plots. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.
{"title":"Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions","authors":"T. Potlog","doi":"10.1109/SMICND.2012.6400790","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400790","url":null,"abstract":"The dark alternating current (ac) parameters of ZnSe/ZnTe/CdTe thin films heterostructures are measured at different temperatures using the impedance spectroscopy. The real and imaginary parts of the complex impedance are changed with the frequency and temperature. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the heterostructure was analyzed by the Cole-Cole plots. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"28 1","pages":"261-264"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82034581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：