Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400761
V. Banu, P. Godignon, X. Jordà, M. Alexandru, J. Millán
This work presents thermal analysis results of surge current test performed on pressed-pack encapsulated SiC Schottky Diodes. An original method for temperature evaluation during high current pulses, based on behavioural SPICE models, was used to approach the analysis. Silicon Carbide (SiC) is one of the most adequate wide bandgap (WBG) material for manufacturing high temperature and high power electronics. However, the actual generation of commercially available SiC power diodes (Schottky and JBS) shows a maximum junction temperature of only 175°C. This important derating of the SiC devices, which theoretically are capable to sustain much higher temperatures, is due to the packaging limitation. The aim of our investigations is to overcome the actual limitations of SiC device packaging and to obtain reliable SiC devices able to operate at temperatures over 300°C.
{"title":"SiC Schottky Diode surge current analysis and application design using behavioral SPICE models","authors":"V. Banu, P. Godignon, X. Jordà, M. Alexandru, J. Millán","doi":"10.1109/SMICND.2012.6400761","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400761","url":null,"abstract":"This work presents thermal analysis results of surge current test performed on pressed-pack encapsulated SiC Schottky Diodes. An original method for temperature evaluation during high current pulses, based on behavioural SPICE models, was used to approach the analysis. Silicon Carbide (SiC) is one of the most adequate wide bandgap (WBG) material for manufacturing high temperature and high power electronics. However, the actual generation of commercially available SiC power diodes (Schottky and JBS) shows a maximum junction temperature of only 175°C. This important derating of the SiC devices, which theoretically are capable to sustain much higher temperatures, is due to the packaging limitation. The aim of our investigations is to overcome the actual limitations of SiC device packaging and to obtain reliable SiC devices able to operate at temperatures over 300°C.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"128 1","pages":"359-362"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91052425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400752
L. Radoias, C. Zegheru, G. Brezeanu
This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm2. A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).
{"title":"Substrate leakage current influence on bandgap voltage references in automotive applications","authors":"L. Radoias, C. Zegheru, G. Brezeanu","doi":"10.1109/SMICND.2012.6400752","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400752","url":null,"abstract":"This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm2. A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"78 1","pages":"389-392"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91098312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400754
V. Anghel, C. Bartholomeusz, G. Pristavu, G. Brezeanu
Initial control loop conditions are essential in switching circuits where fault detection blocks are present, in order to avoid permanent fault triggers. Furthermore, multi-channel switching interference may affect circuit functionality and cause additional fault triggers. Error amplifiers aquire the difference between sensed and reference signals and output a correction voltage. We propose a solution which ensures that the initial correction voltage does not determine a perpetual fault condition. The proposed solution is implemented in a current mode buck control loop, which delivers constant current through a load.
{"title":"Overcoming leakage current by output precharging in error amplifiers","authors":"V. Anghel, C. Bartholomeusz, G. Pristavu, G. Brezeanu","doi":"10.1109/SMICND.2012.6400754","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400754","url":null,"abstract":"Initial control loop conditions are essential in switching circuits where fault detection blocks are present, in order to avoid permanent fault triggers. Furthermore, multi-channel switching interference may affect circuit functionality and cause additional fault triggers. Error amplifiers aquire the difference between sensed and reference signals and output a correction voltage. We propose a solution which ensures that the initial correction voltage does not determine a perpetual fault condition. The proposed solution is implemented in a current mode buck control loop, which delivers constant current through a load.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"5 1","pages":"381-384"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83725396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400740
M. Mocanu, M. Gurzun, L. Goras
In this paper several formulas for cycle-to-cycle jitter in a simple comparator based relaxation oscillator are derived. The main contribution consists in the fact that the jitter produced by the white noise sources is evaluated by taking into consideration the slew-rate of the comparator.
{"title":"Aspects concerning cycle-to-cycle jitter in a comparator based relaxation oscillator","authors":"M. Mocanu, M. Gurzun, L. Goras","doi":"10.1109/SMICND.2012.6400740","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400740","url":null,"abstract":"In this paper several formulas for cycle-to-cycle jitter in a simple comparator based relaxation oscillator are derived. The main contribution consists in the fact that the jitter produced by the white noise sources is evaluated by taking into consideration the slew-rate of the comparator.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"131 1","pages":"425-428"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89032861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400768
S. Somacescu, A. Dinescu, P. Osiceanu
Nanostructured Fe doped ZnO: TiO2 with crystalline framework and porous structure were successfully synthesized by hydrothermal route, using ionic and non-ionic surfactants as templates. The structure morphology, surface chemistry and sensing properties were investigated. The results highlighted that ZnO: TiO2 materials show a wurtzite type structure with TiO2 anatase phase in higher proportion, while a minor phase TiO2 rutile was observed for the materials containing Fe. Surface chemistry revealed the elements quantitatively detected on the surface and their chemical environment. Nanostructured Fe doped ZnO: TiO2 materials were sensitive to toxic gases as CO and NO2 at 300 oC and to a small gas concentration in the range of ~3ppm.
{"title":"Nanostructured Fe doped ZnO: TiO2 for gas sensors applications","authors":"S. Somacescu, A. Dinescu, P. Osiceanu","doi":"10.1109/SMICND.2012.6400768","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400768","url":null,"abstract":"Nanostructured Fe doped ZnO: TiO2 with crystalline framework and porous structure were successfully synthesized by hydrothermal route, using ionic and non-ionic surfactants as templates. The structure morphology, surface chemistry and sensing properties were investigated. The results highlighted that ZnO: TiO2 materials show a wurtzite type structure with TiO2 anatase phase in higher proportion, while a minor phase TiO2 rutile was observed for the materials containing Fe. Surface chemistry revealed the elements quantitatively detected on the surface and their chemical environment. Nanostructured Fe doped ZnO: TiO2 materials were sensitive to toxic gases as CO and NO2 at 300 oC and to a small gas concentration in the range of ~3ppm.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"337-340"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84731378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400687
A. Zubarev, D. Dragoman
We investigate the transmission of divergent electron beams through a succession of barriers in graphene, in order to search for possible applications of these structures in nanoelectronics. We show that the periodically gated structures are very sensitive to the variation of the external electric field, such that they can be used to modulate the transmission coefficient of electrons at oblique incidence by a slight change in the potential energy of the barriers and to steer electron beams.
{"title":"Applications of devices with multi-barrier structures in graphene","authors":"A. Zubarev, D. Dragoman","doi":"10.1109/SMICND.2012.6400687","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400687","url":null,"abstract":"We investigate the transmission of divergent electron beams through a succession of barriers in graphene, in order to search for possible applications of these structures in nanoelectronics. We show that the periodically gated structures are very sensitive to the variation of the external electric field, such that they can be used to modulate the transmission coefficient of electrons at oblique incidence by a slight change in the potential energy of the barriers and to steer electron beams.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"22 1","pages":"99-102"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86722384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400747
A. Rusu, L. Dobrescu, M. Enachescu, C. Burileanu
In this paper we present a voltage amplifier using a gated diode in breakdown regime. The diode is biased with a constant current and is in common anode configuration. The measured diode was obtained from a commercial nMOS transistor that has the substrate pin available. The circuit will be analyzed in this paper and the theory is in good agreement with the measurements.
{"title":"Common anode amplifier of a commercial MOS transistor in avalanche gated diode configuration","authors":"A. Rusu, L. Dobrescu, M. Enachescu, C. Burileanu","doi":"10.1109/SMICND.2012.6400747","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400747","url":null,"abstract":"In this paper we present a voltage amplifier using a gated diode in breakdown regime. The diode is biased with a constant current and is in common anode configuration. The measured diode was obtained from a commercial nMOS transistor that has the substrate pin available. The circuit will be analyzed in this paper and the theory is in good agreement with the measurements.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"40 1","pages":"403-406"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81600473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400667
C. Cobianu, B. Șerban, V. Avramescu, B. Hobbs, K. Pratt, M. Willett
Within this paper we present a thermodynamic methodology for the selection of non-toxic metals which could be used as lead-free consumable anodes in electrochemical galvanic oxygen sensors. Starting from thermodynamic nobility theory, metals like copper, bismuth or antimony are proposed to replace lead in future galvanic O2 sensors. The thermodynamic theory provides voltage windows which increase from copper (0.7 V), to bismuth (0.857 V) and antimony (1.076 V). The experimental voltage windows are smaller than the theoretical ones, but these experimental values increase in the same order from Cu, to Bi and Sb, as predicted by our methodology.
{"title":"Lead-free galvanic oxygen sensors — A conceptual approach","authors":"C. Cobianu, B. Șerban, V. Avramescu, B. Hobbs, K. Pratt, M. Willett","doi":"10.1109/SMICND.2012.6400667","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400667","url":null,"abstract":"Within this paper we present a thermodynamic methodology for the selection of non-toxic metals which could be used as lead-free consumable anodes in electrochemical galvanic oxygen sensors. Starting from thermodynamic nobility theory, metals like copper, bismuth or antimony are proposed to replace lead in future galvanic O2 sensors. The thermodynamic theory provides voltage windows which increase from copper (0.7 V), to bismuth (0.857 V) and antimony (1.076 V). The experimental voltage windows are smaller than the theoretical ones, but these experimental values increase in the same order from Cu, to Bi and Sb, as predicted by our methodology.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"68 1","pages":"161-164"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85306189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400770
E. Vasile, S. Mihaiu, R. Plugaru
High spatial and analytical resolution HR SEM-EDX and STEM-EDX microscopy techniques were applied for characterization of thin films transistors (TFT) with ZnO: Al active channel layer. The structure and chemical composition of thin films and their interfaces were investigated at the nanometer scale using cross section samples from TFT devices. We evidenced that cross sectional chemical elements spectra and elemental mapping are very powerful tools for analysis of chemical elements distribution in the films and at the interfaces.
{"title":"Nanoscale analysis of the cross-sectional structure and composition of ZnO: Al active channel layer in thin film transistors","authors":"E. Vasile, S. Mihaiu, R. Plugaru","doi":"10.1109/SMICND.2012.6400770","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400770","url":null,"abstract":"High spatial and analytical resolution HR SEM-EDX and STEM-EDX microscopy techniques were applied for characterization of thin films transistors (TFT) with ZnO: Al active channel layer. The structure and chemical composition of thin films and their interfaces were investigated at the nanometer scale using cross section samples from TFT devices. We evidenced that cross sectional chemical elements spectra and elemental mapping are very powerful tools for analysis of chemical elements distribution in the films and at the interfaces.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"27 1","pages":"329-332"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76799205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400689
C. Palade, A. Lepadatu, I. Stavarache, A. Maraloiu, V. Teodorescu, M. Ciurea
This paper reports on the conduction mechanisms in amorphous SiO2 films with embedded Ge nanoparticles. For this, measurements of current-temperature and current-voltage were employed and correlated with the microstructure results obtained from transmission electron microscopy (TEM). TEM images reveal that our films contain big Ge nanoparticles with low density and small Ge nanoparticles with high density, the last ones being the only responsible for the electrical transport. Two transport mechanisms were found at low and high temperature respectively, namely hopping on localized states in a band near Fermi level and charge excitation to the extended states at mobility edge.
{"title":"Transport mechanisms in SiO2 films with embedded Germanium nanoparticles","authors":"C. Palade, A. Lepadatu, I. Stavarache, A. Maraloiu, V. Teodorescu, M. Ciurea","doi":"10.1109/SMICND.2012.6400689","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400689","url":null,"abstract":"This paper reports on the conduction mechanisms in amorphous SiO2 films with embedded Ge nanoparticles. For this, measurements of current-temperature and current-voltage were employed and correlated with the microstructure results obtained from transmission electron microscopy (TEM). TEM images reveal that our films contain big Ge nanoparticles with low density and small Ge nanoparticles with high density, the last ones being the only responsible for the electrical transport. Two transport mechanisms were found at low and high temperature respectively, namely hopping on localized states in a band near Fermi level and charge excitation to the extended states at mobility edge.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"4 1","pages":"91-94"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73052138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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