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On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters 具有收发器共存特性的片上弯曲三维InGaN/GaN量子阱二极管

Chip

Pub Date : 2024-12-01 DOI: 10.1016/j.chip.2024.100115

Feifei Qin , Xueyao Lu , Xiaoxuan Wang , Chunxiang Guo , Jiaqi Wu , Xuefeng Fan , Mingming Jiang , Peng Wan , Junfeng Lu , Yongjin Wang , Gangyi Zhu

Featured with light emission and detection coexistence phenomenon, nitride-based multiple-quantum-well (MQW) diodes integrated chip has been proven to be an attractive structure for application prospects in various fields such as lighting, sensing, optical communication, and other fields. However, most of the recent reports are based on planar structures. Three-dimensional (3D) structures are endowed with extra advantages in direction, polarization, and absorption modulation and may pioneer a new way to make the same thing over and over again with interesting properties. In this paper, we designed and fabricated a single-cantilever InGaN/GaN MQW diode with warped 3D microstructure via standard microfabrication technology. Experimental results indicate that the strain architecture of the multi-layer materials is the key principle for the self-warped device. The planar structure will bear greater compressive stress while the warped beam part has less stress, which results in differences in the optical and electrical performance. The strain-induced band bending highly influences the emission and detection properties, while the warped structure will introduce direction selectivity to the 3D device. As an emitter, 3D structures exhibit a directional emission with lower turn-on voltage, higher capacitance, increased luminous intensity, higher external quantum efficiency (EQE), high –3 dB bandwidth, and redshifted peak wavelength. Besides, it can serve as an emitter for directional-related optical communication. As a receiver, 3D structures have lower dark-current, higher photocurrent, and red-shifted response spectrum and also show directional dependence. These findings not only deepen the understanding of the working principle of the single-cantilever GaN devices but also provide important references for device performance optimization and new applications in visible light communication (VLC) technology.

氮基多量子阱（MQW）二极管集成芯片具有发光与探测共存的特点，在照明、传感、光通信等领域具有广阔的应用前景。然而，最近的报道大多是基于平面结构。三维（3D）结构在方向，偏振和吸收调制方面具有额外的优势，并且可能开创一种新的方法，可以反复制造具有有趣性质的相同事物。本文采用标准微加工技术，设计并制造了具有翘曲三维微结构的单悬臂InGaN/GaN MQW二极管。实验结果表明，多层材料的应变结构是自翘曲器件的关键原理。平面结构承受较大的压应力，而翘曲梁部分承受较小的应力，导致光学和电学性能的差异。应变诱导的能带弯曲严重影响器件的发射和探测性能，而翘曲的结构将给三维器件带来方向选择性。作为发射体，三维结构具有更低的导通电压、更高的电容、更高的发光强度、更高的外量子效率（EQE）、高-3 dB带宽和峰波长红移的定向发射特性。此外，它还可以作为方向相关光通信的发射器。作为接收器，三维结构具有较低的暗电流、较高的光电流和红移响应谱，并表现出方向依赖性。这些发现不仅加深了对单悬臂GaN器件工作原理的理解，而且为器件性能优化和在可见光通信（VLC）技术中的新应用提供了重要参考。

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引用次数: 0

Chip-scale metaphotonic singularities: topological, dynamical, and practical aspects 晶片规模的变态奇点：拓扑学、动力学与实务方面

Chip

Pub Date : 2024-12-01 DOI: 10.1016/j.chip.2024.100109

Tianyue Li , Mengjiao Liu , Jiahao Hou , Xing Yang , Shubo Wang , Shuming Wang , Shining Zhu , Din Ping Tsai , Zhenlin Wang

Research about singularities has been driving scientific advancements across mathematics and physics. Comprehending and harnessing the novel properties of singularities in photonics can facilitate the development of integrated micro-nano devices in diverse platforms. Herein, we provide a comprehensive overview of photonic singularities emerging in structured light fields and metamaterial structures. We classify them into several representative types: real-space singularities, momentum-space singularities, and parameter-space singularities, with discussions of their intriguing topological and dynamical properties. Moreover, we report on the latest applications of photonic singularities in broad areas, ranging from light routing, lasing, sensing, and optical manipulation to imaging and display. This review connects the singularity phenomena in different photonic systems, bridging the abstract concepts with emerging practical applications. It underscores the significance of photonic singularities in both fundamental science and various on-chip applications.

关于奇点的研究一直在推动数学和物理领域的科学进步。理解和利用光子学中奇点的新特性有助于在不同平台上集成微纳器件的发展。本文对结构光场和超材料结构中出现的光子奇点进行了全面的综述。我们将奇异点分为实空间奇异点、动量空间奇异点和参数空间奇异点，并讨论了它们有趣的拓扑和动力学性质。此外，我们报告了光子奇点在广泛领域的最新应用，从光路由，激光，传感，光学操作到成像和显示。本文将不同光子系统中的奇点现象联系起来，将抽象概念与新兴的实际应用联系起来。它强调了光子奇点在基础科学和各种片上应用中的重要性。

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引用次数: 0

III-nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring 基于氮化物mqw的多功能环境监测光电传感器

Chip

Pub Date : 2024-12-01 DOI: 10.1016/j.chip.2024.100113

Xumin Gao , Dongmei Wu , Tianlong Xie , Jialei Yuan , Mingyuan Xie , Yongjin Wang , Haitao Zhao , Gangyi Zhu , Zheng Shi

This work presents an integrated multi-quantum well (MQW) optoelectronic sensor leveraging III-nitride materials for multifunctionality on a monolithic chip. The sensor was fabricated using standard microfabrication techniques and adopted the identical InGaN/GaN MQWs, which enables simultaneous emission and detection. The sensor is featured with a double concentric circle structure which supports both on-chip and off-chip detection mechanisms, being capable of detecting environmental parameters like rotational speed, proximity, and sucrose concentration. It exhibits stable photocurrent response to rotational speed up to 8000 rpm, a 3 cm vertical detection range, and a linear response with 3.9 nA/% sensitivity to changes in sucrose concentration, which demonstrates the potential for diverse applications in industrial and biomedical fields.

这项工作提出了一种集成的多量子阱（MQW）光电传感器，利用iii -氮化物材料在单片芯片上实现多功能。该传感器采用标准微加工技术制造，采用相同的InGaN/GaN mqw，可以同时发射和检测。该传感器具有双同心圆结构，支持片内和片外检测机制，能够检测转速、接近度和蔗糖浓度等环境参数。它具有稳定的光电流响应，转速高达8000 rpm，垂直检测范围为3 cm，对蔗糖浓度变化的线性响应灵敏度为3.9 nA/%，这表明它在工业和生物医学领域具有广泛的应用潜力。

引用次数: 0

Silicon photonic integrated wideband radio frequency self-interference cancellation chip for over-the-air in-band full-duplex communication 用于空中带内全双工通信的硅光子集成宽带射频自干扰消除芯片

Chip

Pub Date : 2024-12-01 DOI: 10.1016/j.chip.2024.100114

Xinxin Su , Meng Chao , Xiuyou Han , Han Liang , Wenfu Zhang , Shuanglin Fu , Weiheng Wang , Mingshan Zhao

Compared with the traditional frequency division duplex and time division duplex, the in-band full-duplex (IBFD) technology can double the spectrum utilization efficiency and information transmission rate. However, radio frequency (RF) self-interference remains a key issue to be resolved for the application of IBFD. The photonic RF self-interference cancellation (SIC) scheme is endowed with the advantages of wide bandwidth, high amplitude and time delay tuning precision, and immunity to electromagnetic interference. To meet the requirements of the new generation of mobile terminals and satellite payloads, the photonic RF SIC system is desired to be miniaturized, integrated, and low power consumption. In this study, the integrated photonic RF SIC scheme was proposed and demonstrated on a silicon-based platform. By utilizing the opposite bias points of the on-chip dual Mach-Zehnder modulators, the phase inversion relationship for SIC was realized over a broad frequency band. The time delay structure combining the optically switched waveguide and compact spiral waveguide enables continuous tuning of time over a wide bandwidth. The optical amplitude adjuster provides efficient amplitude control with a large dynamic range. After being packaged with optical, direct current, and RF design, the photonic RF SIC chip exhibits the interference cancellation capabilities across L, S, C, X, Ku, K, and Ka bands. In the S and C bands, a cancellation depth exceeding 20 dB was measured across a bandwidth of 4.8 GHz. An impressive cancellation depth of over 40 dB was achieved within a bandwidth of 80 MHz at a central frequency of 2 GHz. For the application of over-the-air IBFD communication at the newly promulgated center frequency of 6 GHz for 5G communication, the cancellation depth of 21.7 dB was demonstrated in the bandwidth of 100 MHz, and the low-power signals of interest were recovered successfully.

与传统的分频双工和时分双工相比，带内全双工（IBFD）技术可以使频谱利用效率和信息传输速率提高一倍。然而，射频自干扰仍然是IBFD应用中需要解决的关键问题。光子射频自干扰抵消（SIC）方案具有带宽宽、振幅和时延调谐精度高、抗电磁干扰等优点。为满足新一代移动终端和卫星有效载荷的要求，光子射频SIC系统向着小型化、集成化、低功耗的方向发展。在本研究中，提出了集成光子射频SIC方案，并在硅基平台上进行了验证。利用片上双马赫-曾德尔调制器的反向偏置点，实现了SIC在宽频段内的相位反转关系。结合光开关波导和紧凑螺旋波导的时间延迟结构可以在宽带宽上连续调谐时间。光学调幅器提供了有效的幅度控制与大的动态范围。在采用光学、直流和射频设计封装后，光子RF SIC芯片在L、S、C、X、Ku、K和Ka波段显示出干扰消除能力。在S和C波段，在4.8 GHz的带宽上测量到超过20 dB的消去深度。在2 GHz的中心频率下，在80 MHz的带宽内实现了超过40 dB的令人印象深刻的消去深度。针对新颁布的5G通信中心频率为6ghz的无线IBFD通信应用，在100mhz带宽下演示了21.7 dB的对消深度，成功恢复了感兴趣的低功率信号。

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引用次数: 0

A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications 一种用于超灵敏负压传感应用的多功能光电器件

Chip

Pub Date : 2024-12-01 DOI: 10.1016/j.chip.2024.100116

Xiaoshuai An , Sizhe Gui , Yingxin Li , Zhiqin Chu , Kwai Hei Li

A versatile optoelectronic device with ultrasensitive negative-positive pressure sensing capabilities, which is integrated with a wireless monitoring system, was fabricated and demonstrated in the current work. The device comprises a monolithic GaN chip with a polydimethylsiloxane cavity and nanograting, which effectively transduces pressure stimuli into optical changes detected by the GaN chip. The developed device exhibits an ultra-low detection limit for a mass of 0.03 mg, a pressure of 2.94 Pa, and a water depth of 0.3 mm, with a detection range of −100 kPa to 30.5 kPa and high stability. The versatility of the device is demonstrated by its ability to monitor heart pulse, grip strength, and respiration. Its integration with a wireless data transmission system enables real-time monitoring of human activity and heart rate underwater, making it suitable for precise measurements in various practical applications.

制作并演示了一种具有超灵敏负压传感能力的多功能光电器件，该器件与无线监测系统集成在一起。该器件包括一个带有聚二甲基硅氧烷腔和纳米光栅的单片GaN芯片，该芯片有效地将压力刺激转换为GaN芯片检测到的光学变化。该装置在质量为0.03 mg、压力为2.94 Pa、水深为0.3 mm的条件下具有超低检出限，检测范围为- 100 kPa ~ 30.5 kPa，稳定性高。该设备的多功能性体现在其监测心脏脉搏、握力和呼吸的能力上。它与无线数据传输系统的集成可以实时监测水下的人类活动和心率，使其适用于各种实际应用中的精确测量。

引用次数: 0

All-optical combinational logical units featuring fifth-order cascade 具有五阶级联的全光组合逻辑单元

Chip

Pub Date : 2024-12-01 DOI: 10.1016/j.chip.2024.100112

Haiqi Gao , Yu Shao , Yipeng Chen , Junren Wen , Yuchuan Shao , Yueguang Zhang , Weidong Shen , Chenying Yang

Modern computational technologies are gradually encountering significant limitations, driving a shift toward alternative paradigms such as optical computing. In this study, novel all-optical combinational logic units based on diffractive neural networks (D²NNs) were introduced, which were designed to perform high-order logical operations efficiently and swiftly with the adoption of only two modulation layers. This innovative design exhibits increased processing speed, improved energy efficiency, robust environmental stability, and high error tolerance, making it exceptionally well-suited for a broad spectrum of applications in optical computing and communications. By leveraging the transfer learning, we successfully developed a fifth-order cascaded combinational logic circuit for a practical information transmission system. Furthermore, we revealed a pioneering application of the device in optical time division multiplexing (OTDM), demonstrating its capability to manage high-speed data transfer seamlessly without the need for electronic conversion. Extensive simulations and experimental validations demonstrate the potential of the model as a foundational technology for future optical computing architectures, which paves the way toward more sustainable and efficient optical data processing platforms.

现代计算技术正逐渐遇到重大的限制，推动了向替代范式（如光学计算）的转变。本文介绍了一种基于衍射神经网络（d2nn）的新型全光组合逻辑单元，该单元仅采用两层调制层，可以高效、快速地执行高阶逻辑运算。这种创新的设计表现出更高的处理速度，更高的能源效率，强大的环境稳定性和高容错性，使其非常适合于光计算和通信中的广泛应用。利用迁移学习，我们成功地开发了一种用于实际信息传输系统的五阶级联组合逻辑电路。此外，我们还展示了该器件在光时分多路复用（OTDM）中的开创性应用，展示了其无需电子转换即可无缝管理高速数据传输的能力。广泛的仿真和实验验证证明了该模型作为未来光学计算架构的基础技术的潜力，为更可持续和高效的光学数据处理平台铺平了道路。

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引用次数: 0

16-channel photonic solver for optimization problems on a silicon chip 硅芯片上优化问题的16通道光子求解器

Chip

Pub Date : 2024-11-08 DOI: 10.1016/j.chip.2024.100117

Jiayi Ouyang , Shengping Liu , Ziyue Yang , Wei Wang , Xue Feng , Yongzhuo Li , Yidong Huang

A programmable photonic solver for quadratic unconstrained binary optimization (QUBO) problems is demonstrated with a hybrid optoelectronic scheme, which consists of a photonic chip and an electronic driving board. The photonic chip is employed to perform the optical vector-matrix multiplication (OVMM) to calculate the cost function of the QUBO problem, while the electronic processor runs the heuristic algorithm to search for the optimal solution. Due to the parallel and low-latency propagation of lightwaves, the calculation of the cost function can be accelerated. The photonic chip was fabricated on the silicon on insulator (SOI) substrate and integrated 16 high-speed electro-optic modulators, 88 thermo-optic phase shifters, and 16 balanced photodetectors. The computing speed of the photonic chip is 1.66 TFLOP/s. As a proof of principle, two randomly generated 16-dimensional QUBO problems are solved with high successful probabilities. These results present the potential of fast-solving optimization problems with integrated photonic systems.

提出了一种由光子芯片和电子驱动板组成的光电混合方案，用于二次型无约束二元优化问题的可编程光子求解器。利用光子芯片进行光学向量矩阵乘法（OVMM）计算QUBO问题的代价函数，电子处理器运行启发式算法搜索最优解。由于光波的并行传播和低延迟传播，可以加快代价函数的计算速度。该光子芯片由16个高速电光调制器、88个热光移相器和16个平衡光电探测器组成。该光子芯片的计算速度为1.66 TFLOP/s。作为一个原理证明，两个随机生成的16维QUBO问题都有很高的成功概率。这些结果显示了集成光子系统快速解决优化问题的潜力。

引用次数: 0

Q-enhancement of piezoelectric micro-oven-controlled MEMS resonators using honeycomb lattice phononic crystals 利用蜂巢晶格声波晶体增强压电微炉控 MEMS 谐振器的 Q 值

Chip

Pub Date : 2024-09-19 DOI: 10.1016/j.chip.2024.100108

Yuhao Xiao , Kewen Zhu , Jinzhao Han , Sheng Liu , Guoqiang Wu

In this article, a two-dimensional (2D) honeycomb lattice phononic crystal (PnC) based micro-oven with large bandgap is introduced to be integrated with piezoelectric microelectromechanical systems (MEMS) resonator to reduce anchor loss for timing applications. Finite element method (FEM) analysis and experimental measurement were performed to verify that the proposed PnC micro-oven design gives advantage in quality factor (Q). The measurement results demonstrate that the resonator with 2D honeycomb lattice PnC micro-oven shows a repeatable 1.7 times improvement of average Q compared with the bare one. The resonator with micro-oven control was further measured for frequency stability. The proposed piezoelectric micro-oven-controlled MEMS resonator achieves a frequency stability of less than ±10 ppb in a stable environment, which indicates promising potential for application in high-end timing field.

本文介绍了一种基于二维（2D）蜂窝晶格声子晶体（PnC）的大带隙微匀炉，该微匀炉与压电微机电系统（MEMS）谐振器集成，可降低定时应用中的锚定损耗。通过有限元法（FEM）分析和实验测量，验证了所提出的 PnC 微炉设计在品质因数（Q）方面的优势。测量结果表明，与裸谐振器相比，带有二维蜂窝晶格 PnC 微凹槽的谐振器的平均 Q 值可重复提高 1.7 倍。我们还进一步测量了带有微凹槽控制的谐振器的频率稳定性。所提出的压电微凹槽控制 MEMS 谐振器在稳定环境下的频率稳定性小于 ±10 ppb，这表明它在高端计时领域的应用潜力巨大。

引用次数: 0

Suspended nanomembrane silicon photonic integrated circuits 悬浮纳米膜硅光子集成电路

Chip

Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100104

Rongxiang Guo , Qiyue Lang , Zunyue Zhang , Haofeng Hu , Tiegen Liu , Jiaqi Wang , Zhenzhou Cheng

Leveraging the low linear and nonlinear absorption loss of silicon at mid-infrared (mid-IR) wavelengths, silicon photonic integrated circuits (PICs) have attracted significant attention for mid-IR applications including optical sensing, spectroscopy, and nonlinear optics. However, mid-IR silicon PICs typically show moderate performance compared to state-of-the-art silicon photonic devices operating in the telecommunication band. Here, we proposed and demonstrated suspended nanomembrane silicon (SNS) PICs with light-guiding within deep-subwavelength waveguide thickness for operation in the short-wavelength mid-IR region. We demonstrated key building components, namely, grating couplers, waveguide arrays, micro-resonators, etc., which exhibit excellent performances in bandwidths, back reflections, quality factors, and fabrication tolerance. Moreover, the results show that the proposed SNS PICs have high compatibility with the multi-project wafer foundry services. Our study provides an unprecedented platform for mid-IR integrated photonics and applications.

利用硅在中红外波段的低线性和非线性吸收损耗，硅光子集成电路（PIC）在中红外应用（包括光学传感、光谱学和非线性光学）中备受关注。然而，与在电信波段工作的最先进硅光子器件相比，中红外硅光子集成电路通常性能一般。在此，我们提出并演示了悬浮纳米膜硅（SNS）集成电路，该集成电路在深亚波长波导厚度内具有光导功能，可在短波长中红外区域工作。我们展示了光栅耦合器、波导阵列、微谐振器等关键构建元件，这些元件在带宽、背反射、品质因数和制造容差等方面表现出色。此外，研究结果表明，所提出的 SNS PIC 与多项目晶圆代工服务具有很高的兼容性。我们的研究为中红外集成光子学和应用提供了一个前所未有的平台。

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引用次数: 0

Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination 具有双离子植入边缘终端的垂直 GaN 肖特基势垒二极管的电气性能和可靠性分析

Chip

Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100105

Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu

In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (V_BR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high I_on/I_off ratio of approximately 10⁹, and a low specific on-resistance of 1.93 mΩ cm². When the ion implantation edge was terminated, the maximum V_BR of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm^–2 and showed excellent reliability during pulse stress testing.

在这项研究中，采用氢化物气相外延（HVPE）技术完全生长了氮化镓（GaN）衬底及其 15 μm 外延层。为了提高垂直氮化镓-氮化镓肖特基势垒二极管（SBD）的击穿电压（VBR），采用了碳和氦的双离子共植入来创建边缘终端。由此产生的器件具有 0.55 V 的低导通电压、约 109 的高离子/关断比和 1.93 mΩ cm2 的低比导通电阻。当离子注入边缘终止时，器件的最大 VBR 达到 1575 V，平均提高了 126%。这些器件的优点系数（FOM）高达 1.28 GW cm-2，并在脉冲应力测试中表现出卓越的可靠性。

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