Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931633
L. Filipovic, F. Rudolf, E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, A. Singulani, R. Minixhofer, S. Selberherr
The electrical performance and reliability of a through-silicon via is investigated through two-dimensional and three-dimensional simulations. Due to the large differences in material thicknesses present in the structures, a 3D simulation is often not feasible. The thermo-mechanical stress, the electrical parameters including TSV resistance and capacitance, as well as the electromigration-induced stress are investigated. A comparison between the results obtained through 2D and 3D simulations is used to suggest which types of simulations require a 3D modelling approach. It is found that an appropriate analysis of the current density through the structure requires 3D simulation, meaning that electromigration phenomena must be studied with 3D simulation or at least a combination of 2D and 3D analysis. However, a 2D simulation with assumed rotational symmetry is sufficient to estimate the thermo-mechanical stress distribution through the structure as well as the parasitic capacitance and signal loss of the TSV.
{"title":"Three-dimensional simulation for the reliability and electrical performance of through-silicon vias","authors":"L. Filipovic, F. Rudolf, E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, A. Singulani, R. Minixhofer, S. Selberherr","doi":"10.1109/SISPAD.2014.6931633","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931633","url":null,"abstract":"The electrical performance and reliability of a through-silicon via is investigated through two-dimensional and three-dimensional simulations. Due to the large differences in material thicknesses present in the structures, a 3D simulation is often not feasible. The thermo-mechanical stress, the electrical parameters including TSV resistance and capacitance, as well as the electromigration-induced stress are investigated. A comparison between the results obtained through 2D and 3D simulations is used to suggest which types of simulations require a 3D modelling approach. It is found that an appropriate analysis of the current density through the structure requires 3D simulation, meaning that electromigration phenomena must be studied with 3D simulation or at least a combination of 2D and 3D analysis. However, a 2D simulation with assumed rotational symmetry is sufficient to estimate the thermo-mechanical stress distribution through the structure as well as the parasitic capacitance and signal loss of the TSV.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134637878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931629
H. Ryu, Jongseob Kim, K. Hong
Sensitivity of Phosphorus dopant placement to the channel size of highly doped silicon nanowires is studied using a 10-band sp3 d5 s* tight-binding approach coupled to self-consistent simulations. Extending the simulation scope to realistically sized nanowires, we observed that uniform doping does not necessarily reduce the channel energy compared to surface-oriented doping when the diameter of a nanowire cross-section is smaller than 20 nm, whilst uniform doping lowers the energy, making the channel more stable at larger cross-sections. This size-dependency, firmly connected to the recent experiment, is understood well in detail by investigating channel electrostatics.
{"title":"Channel-size dependent dopant placement in silicon nanowires","authors":"H. Ryu, Jongseob Kim, K. Hong","doi":"10.1109/SISPAD.2014.6931629","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931629","url":null,"abstract":"Sensitivity of Phosphorus dopant placement to the channel size of highly doped silicon nanowires is studied using a 10-band sp3 d5 s* tight-binding approach coupled to self-consistent simulations. Extending the simulation scope to realistically sized nanowires, we observed that uniform doping does not necessarily reduce the channel energy compared to surface-oriented doping when the diameter of a nanowire cross-section is smaller than 20 nm, whilst uniform doping lowers the energy, making the channel more stable at larger cross-sections. This size-dependency, firmly connected to the recent experiment, is understood well in detail by investigating channel electrostatics.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128833617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931554
E. Bazizi, A. Zaka, T. Herrmann, F. Benistant, J. H. Tin, J. P. Goh, L. Jiang, M. Joshi, H. van Meer, K. Korablev
The impacts of FinFET channel and extension S/D region implantations on relevant device parameters such as electrostatic control and Vth mismatch (MM) are investigated. We used 3D TCAD process and device simulations to gain physical understanding and to optimize the performance/variability of bulk-FinFETs. For the first time, the full FinFET process flow simulation was performed using diffusion, activation and segregation models identical to those used in planar nodes. In this work a wide range of implantation and anneal splits is used to demonstrate the 3D simulation accuracy. After achieving good agreement with experiments in terms of Vth and Ion/Ioff, considering lateral dopant diffusion and activation, the simulation was used to investigate SRAM random doping fluctuation RDF.
{"title":"USJ engineering impacts on FinFETs and RDF investigation using full 3D process/device simulation","authors":"E. Bazizi, A. Zaka, T. Herrmann, F. Benistant, J. H. Tin, J. P. Goh, L. Jiang, M. Joshi, H. van Meer, K. Korablev","doi":"10.1109/SISPAD.2014.6931554","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931554","url":null,"abstract":"The impacts of FinFET channel and extension S/D region implantations on relevant device parameters such as electrostatic control and Vth mismatch (MM) are investigated. We used 3D TCAD process and device simulations to gain physical understanding and to optimize the performance/variability of bulk-FinFETs. For the first time, the full FinFET process flow simulation was performed using diffusion, activation and segregation models identical to those used in planar nodes. In this work a wide range of implantation and anneal splits is used to demonstrate the 3D simulation accuracy. After achieving good agreement with experiments in terms of Vth and Ion/Ioff, considering lateral dopant diffusion and activation, the simulation was used to investigate SRAM random doping fluctuation RDF.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"230 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132286697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931578
M. Ancona
A consistent thermoelectroelastic description of piezoelectric semiconductors with finite deformation is presented. By including both kinematic and constitutive nonlinearities as well as a proper treatment of the electrostatic conditions at free surfaces, the theory allows situations with large strains to be modeled more accurately. In addition, the theory is rotationally invariant unlike the linear theory, and can therefore be applied to semiconducting MEMS structures that involve large mechanical displacements. These points are illustrated using numerical simulations of several different III-N devices of technological interest.
{"title":"Nonlinear thermoelectroelastic simulation of III-N devices","authors":"M. Ancona","doi":"10.1109/SISPAD.2014.6931578","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931578","url":null,"abstract":"A consistent thermoelectroelastic description of piezoelectric semiconductors with finite deformation is presented. By including both kinematic and constitutive nonlinearities as well as a proper treatment of the electrostatic conditions at free surfaces, the theory allows situations with large strains to be modeled more accurately. In addition, the theory is rotationally invariant unlike the linear theory, and can therefore be applied to semiconducting MEMS structures that involve large mechanical displacements. These points are illustrated using numerical simulations of several different III-N devices of technological interest.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129999763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931555
Kyeungkeun Choe, TaeYoon An, Soyoung Kim
In this paper, analytical gate fringe capacitance model of FinFETs including metal contact and raised source and drain (RSD) are developed. Each cross capacitance models are derived using conformal mapping and field integration. The proposed models are verified with a three-dimensional field solver, Raphael. By including the additional fringe capacitance from RSD and metal contact in BSIM-CMG platform, realistic transition frequency (fT) and propagation delay of 9-stage ring oscillators are predicted and compared with those predicted by default BSIM-CMG capacitance models.
{"title":"Accurate fringe capacitance model considering RSD and metal contact for realistic FinFETs and circuit performance simulation","authors":"Kyeungkeun Choe, TaeYoon An, Soyoung Kim","doi":"10.1109/SISPAD.2014.6931555","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931555","url":null,"abstract":"In this paper, analytical gate fringe capacitance model of FinFETs including metal contact and raised source and drain (RSD) are developed. Each cross capacitance models are derived using conformal mapping and field integration. The proposed models are verified with a three-dimensional field solver, Raphael. By including the additional fringe capacitance from RSD and metal contact in BSIM-CMG platform, realistic transition frequency (fT) and propagation delay of 9-stage ring oscillators are predicted and compared with those predicted by default BSIM-CMG capacitance models.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121440648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931575
Dax M. Crum, A. Valsaraj, L. F. Register, S. Banerjee
We present a three-dimensional semi-classical ensemble Monte Carlo device simulator with novel quantum corrections. The simulator includes a beyond-Fermi treatment of Pauli-Exclusion-blocked scattering, and a valley-dependent treatment of various quantum confinement effects. Quantum corrections to the potential are used not only to model redistribution of carriers in real space, but also to model altered energy valley offsets and associated redistribution of carriers in k-space, and quantum-confined scattering rates, including a new approach to model surface roughness scattering. We illustrate the capabilities of the simulator using different levels of modeling, with an emphasis on modeling nano-scale FinFETs with degenerate carrier populations, including III-V devices.
{"title":"Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs","authors":"Dax M. Crum, A. Valsaraj, L. F. Register, S. Banerjee","doi":"10.1109/SISPAD.2014.6931575","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931575","url":null,"abstract":"We present a three-dimensional semi-classical ensemble Monte Carlo device simulator with novel quantum corrections. The simulator includes a beyond-Fermi treatment of Pauli-Exclusion-blocked scattering, and a valley-dependent treatment of various quantum confinement effects. Quantum corrections to the potential are used not only to model redistribution of carriers in real space, but also to model altered energy valley offsets and associated redistribution of carriers in k-space, and quantum-confined scattering rates, including a new approach to model surface roughness scattering. We illustrate the capabilities of the simulator using different levels of modeling, with an emphasis on modeling nano-scale FinFETs with degenerate carrier populations, including III-V devices.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123233826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931591
D. Jabs, C. Jungemann
The deterministic solution of the coupled Boltzmann transport equations for electrons and holes is calculated by means of the spherical harmonics expansion method for avalanche breakdown of a pn-junction. An iteration scheme based on a splitting of the system matrix is presented, by which a stable solution of this numerically challenging problem can be obtained.
{"title":"Avalanche breakdown of pn-junctions — Simulation by spherical harmonics expansion of the Boltzmann transport equation","authors":"D. Jabs, C. Jungemann","doi":"10.1109/SISPAD.2014.6931591","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931591","url":null,"abstract":"The deterministic solution of the coupled Boltzmann transport equations for electrons and holes is calculated by means of the spherical harmonics expansion method for avalanche breakdown of a pn-junction. An iteration scheme based on a splitting of the system matrix is presented, by which a stable solution of this numerically challenging problem can be obtained.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124303880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931557
O. Pirrotta, A. Padovani, L. Larcher, L. Zhao, B. Magyari-Kope, Y. Nishi
In this work we investigate the charge transport in sub-stoichiometric TiOx for RRAM applications. We explored the atomic defect configurations actively assisting the charge transport in sub-stoichiometric TiOx through a multi-scale approach. We combined density-functional-theory-based non-equilibrium Green's function approach (DFT_NEGF) with physical-based trap assisted tunneling (TAT) modeling to identify the defects dominating the current conduction mechanism and the physical parameters of the defects responsible for the trap-assisted tunneling (TAT). The values of the thermal ionization energy ET and relaxation energy EREL extracted are 0.35-0.4eV and 0.7eV, respectively.
{"title":"Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application","authors":"O. Pirrotta, A. Padovani, L. Larcher, L. Zhao, B. Magyari-Kope, Y. Nishi","doi":"10.1109/SISPAD.2014.6931557","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931557","url":null,"abstract":"In this work we investigate the charge transport in sub-stoichiometric TiOx for RRAM applications. We explored the atomic defect configurations actively assisting the charge transport in sub-stoichiometric TiOx through a multi-scale approach. We combined density-functional-theory-based non-equilibrium Green's function approach (DFT_NEGF) with physical-based trap assisted tunneling (TAT) modeling to identify the defects dominating the current conduction mechanism and the physical parameters of the defects responsible for the trap-assisted tunneling (TAT). The values of the thermal ionization energy ET and relaxation energy EREL extracted are 0.35-0.4eV and 0.7eV, respectively.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126340021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931572
H. Wong, N. Braga, R. Mickevicius, F. Gao, T. Palacios
This paper studies, through Three-Dimensional (3D) TCAD simulations, the formation of gate edge pits on the drain-side of GaN high electron mobility transistors (HEMTs) under electrical stress conditions. These pits are believed to be formed due to electrochemical reactions. The simulations predict that holes, which are necessary to initiate the electrochemical reaction but rare under regular HEMT operating conditions, can be generated through trap-assisted, band-to-band tunneling (B2B TAT). The impact of the electrical behavior of the pit (insulator or metal) on the output characteristics (ID-VD) of the HEMTs were also studied. Insulator-type pits degrade the ON-resistance, RD, while metal-types do not. At medium VD, both types of pit degrade ID, which will be recovered at higher VD. But metal-type requires larger VD to restore the ID. As the pits grow, the hole generation rate first increases (more with metal pit), then decrease after the pit-to-width ratio exceeds 20%.
{"title":"Study of AlGaN/GaN HEMT degradation through TCAD simulations","authors":"H. Wong, N. Braga, R. Mickevicius, F. Gao, T. Palacios","doi":"10.1109/SISPAD.2014.6931572","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931572","url":null,"abstract":"This paper studies, through Three-Dimensional (3D) TCAD simulations, the formation of gate edge pits on the drain-side of GaN high electron mobility transistors (HEMTs) under electrical stress conditions. These pits are believed to be formed due to electrochemical reactions. The simulations predict that holes, which are necessary to initiate the electrochemical reaction but rare under regular HEMT operating conditions, can be generated through trap-assisted, band-to-band tunneling (B2B TAT). The impact of the electrical behavior of the pit (insulator or metal) on the output characteristics (ID-VD) of the HEMTs were also studied. Insulator-type pits degrade the ON-resistance, RD, while metal-types do not. At medium VD, both types of pit degrade ID, which will be recovered at higher VD. But metal-type requires larger VD to restore the ID. As the pits grow, the hole generation rate first increases (more with metal pit), then decrease after the pit-to-width ratio exceeds 20%.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128588357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931607
A. Akturk, N. Goldsman, S. Potbhare
We report on our development of a Silicon Carbide Power System Computer Aided Design Tool to address the need for improved methodologies for developing next generation high efficiency power electronics using Silicon Carbide power devices. The first major achievement is to develop compact models for SiC power MOSFETs and to input these models into CoolCAD's SPICE-type simulator, CoolSPICE (the student version that is for simulating standard SPICE circuits is available online: http://coolcadelectronics.com/coolspice/), to facilitate SiC power circuits design. A second aspect of the work is to extract thermal models for SiC MOSFETs, dies, packages, printed circuit boards, and modules, and then input these thermal models into a thermal simulator for calculating temperature of electronic devices, circuits and modules.
{"title":"Electro-thermal simulation of silicon carbide power modules","authors":"A. Akturk, N. Goldsman, S. Potbhare","doi":"10.1109/SISPAD.2014.6931607","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931607","url":null,"abstract":"We report on our development of a Silicon Carbide Power System Computer Aided Design Tool to address the need for improved methodologies for developing next generation high efficiency power electronics using Silicon Carbide power devices. The first major achievement is to develop compact models for SiC power MOSFETs and to input these models into CoolCAD's SPICE-type simulator, CoolSPICE (the student version that is for simulating standard SPICE circuits is available online: http://coolcadelectronics.com/coolspice/), to facilitate SiC power circuits design. A second aspect of the work is to extract thermal models for SiC MOSFETs, dies, packages, printed circuit boards, and modules, and then input these thermal models into a thermal simulator for calculating temperature of electronic devices, circuits and modules.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121539999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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