Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105741
R. Gale, R. McClelland, B. King, J. V. Gormley
AlGaAs-GaAs double-heterostructure solar cells were fabricated in 10 mu m-thick films and exhibited one-sun, total-area conversion efficiencies up to 19.5% AM0, and 22.4% AM1.5. The cell structure consisted on an n-doped GaAs emitter and p-doped GaAs base interposed between AlGaAs layers. The cell structure was deposited by organometallic vapor-phase epitaxy on a GaAs CLEFT substrate, and later mechanically separated from the substrate during cell fabrication. A single-layer antireflection coating was used without a coverglass. The cells, fabricated on 2 in diameter wafers, had areas of either 1 or 4 cm/sup 2/. Reuse of the substrate was successfully demonstrated. For comparison, cells fabricated with a conventional process from double heterostructures deposited on bulk GaAs substrates exhibited one-sun AM1.5 efficiencies as high as 23.7%. The impact of these high efficiencies on space and terrestrial applications is discussed.<>
{"title":"High-efficiency thin-film AlGaAs-GaAs double heterostructure solar cells","authors":"R. Gale, R. McClelland, B. King, J. V. Gormley","doi":"10.1109/PVSC.1988.105741","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105741","url":null,"abstract":"AlGaAs-GaAs double-heterostructure solar cells were fabricated in 10 mu m-thick films and exhibited one-sun, total-area conversion efficiencies up to 19.5% AM0, and 22.4% AM1.5. The cell structure consisted on an n-doped GaAs emitter and p-doped GaAs base interposed between AlGaAs layers. The cell structure was deposited by organometallic vapor-phase epitaxy on a GaAs CLEFT substrate, and later mechanically separated from the substrate during cell fabrication. A single-layer antireflection coating was used without a coverglass. The cells, fabricated on 2 in diameter wafers, had areas of either 1 or 4 cm/sup 2/. Reuse of the substrate was successfully demonstrated. For comparison, cells fabricated with a conventional process from double heterostructures deposited on bulk GaAs substrates exhibited one-sun AM1.5 efficiencies as high as 23.7%. The impact of these high efficiencies on space and terrestrial applications is discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"14 1","pages":"446-450 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78684919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105902
D. Waddington, L. Mrig, R. Deblasio, R. Ross
Details of a proposed test program for PV thin-film modules which the Department of Energy has directed SERI to prepare are presented. Results of one of the characterization tests that SERI has performed are also presented. The objective is to establish a common approach to testing modules that will be acceptable to both users and manufacturers. The tests include acceptance, qualification, and characterization tests. Acceptance tests verify that randomly selected modules have similar characteristics. Qualification tests are based on accelerated test methods designed to simulate adverse conditions. Characterization tests provide data on performance in a predefined environment.<>
{"title":"Proposed acceptance, qualification, and characterization tests for thin-film PV modules","authors":"D. Waddington, L. Mrig, R. Deblasio, R. Ross","doi":"10.1109/PVSC.1988.105902","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105902","url":null,"abstract":"Details of a proposed test program for PV thin-film modules which the Department of Energy has directed SERI to prepare are presented. Results of one of the characterization tests that SERI has performed are also presented. The objective is to establish a common approach to testing modules that will be acceptable to both users and manufacturers. The tests include acceptance, qualification, and characterization tests. Acceptance tests verify that randomly selected modules have similar characteristics. Qualification tests are based on accelerated test methods designed to simulate adverse conditions. Characterization tests provide data on performance in a predefined environment.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"58 1","pages":"1236-1241 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78856614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105991
A. Pal, A. Dhar, A. Mondal, R. Basak, S. Chaudhuri
Cd/sub 1-x/Zn/sub x/S films (0
通过电学和光学测量对Cd/sub 1-x/Zn/sub x/S薄膜(0
{"title":"Electro-optical properties of Cd/sub 1-x/Zn/sub x/S films and fabrication of Cd/sub 1-x/Zn/sub x/S/InP heterojunctions","authors":"A. Pal, A. Dhar, A. Mondal, R. Basak, S. Chaudhuri","doi":"10.1109/PVSC.1988.105991","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105991","url":null,"abstract":"Cd/sub 1-x/Zn/sub x/S films (0<or=x<or=0.2) were characterized by electrical and optical measurements to obtain the optimum deposition condition for device fabrication on p-type single-crystal InP (Zn doped) with","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"1646-1649 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79519983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105807
K. Bertness, M. Ristow, H. C. Hamaker
A p/n GaAs solar cell with 24.0% efficiency under 1-sun global illumination (AM1.5, 1000 W/m/sup 2/) has been grown in a multiwafer organometallic vapor-phase epitaxy (OMVPE) reactor. This reactor has demonstrated good uniformity both from run to run and within a single run as part of a pilot line for the batch production of high-efficiency GaAs cells. The 24% efficiency value represents the highest efficiency reported to date for any solar cell under these conditions. The improved performance of these cells is believed to be mostly due to careful control of the emitter doping.<>
{"title":"High-efficiency GaAs solar cells from a multiwafer OMVPE reactor","authors":"K. Bertness, M. Ristow, H. C. Hamaker","doi":"10.1109/PVSC.1988.105807","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105807","url":null,"abstract":"A p/n GaAs solar cell with 24.0% efficiency under 1-sun global illumination (AM1.5, 1000 W/m/sup 2/) has been grown in a multiwafer organometallic vapor-phase epitaxy (OMVPE) reactor. This reactor has demonstrated good uniformity both from run to run and within a single run as part of a pilot line for the batch production of high-efficiency GaAs cells. The 24% efficiency value represents the highest efficiency reported to date for any solar cell under these conditions. The improved performance of these cells is believed to be mostly due to careful control of the emitter doping.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"144 1","pages":"769-770 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76798267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105659
S. Guha, J. Yang, A. Pawlikiewicz, T. Glatfelter, R. Ross, S. Ovshinsky
The authors have developed an amorphous silicon alloy-based solar cell with a novel structure. Computer simulation studies show that for a given short-circuit current, it is possible to obtain a higher open-circuit voltage and fill factor than in a conventional cell design. For a nominal 1.5 eV a-SiGe alloy, the fill factor under red illumination can be improved from 0.55 to 0.64 for the same short-circuit current. Experimental cell structures confirm the theoretical prediction. The novel cell design shows a considerable improvement in efficiency. Dynamic internal collection efficiency measurements show reduced recombination in these cells, which gives rise to the observed higher fill factors. Incorporation of this structure in the bottom cell of a triple device has resulted in the achievement of 13.7% efficiency under global AM1.5 illumination.<>
{"title":"A novel design for amorphous silicon alloy solar cells","authors":"S. Guha, J. Yang, A. Pawlikiewicz, T. Glatfelter, R. Ross, S. Ovshinsky","doi":"10.1109/PVSC.1988.105659","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105659","url":null,"abstract":"The authors have developed an amorphous silicon alloy-based solar cell with a novel structure. Computer simulation studies show that for a given short-circuit current, it is possible to obtain a higher open-circuit voltage and fill factor than in a conventional cell design. For a nominal 1.5 eV a-SiGe alloy, the fill factor under red illumination can be improved from 0.55 to 0.64 for the same short-circuit current. Experimental cell structures confirm the theoretical prediction. The novel cell design shows a considerable improvement in efficiency. Dynamic internal collection efficiency measurements show reduced recombination in these cells, which gives rise to the observed higher fill factors. Incorporation of this structure in the bottom cell of a triple device has resulted in the achievement of 13.7% efficiency under global AM1.5 illumination.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"22 4 1","pages":"79-84 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77124864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105686
T. Muschik, R. Schwarz, H. Curtins, M. Favre
The decrease of photoluminescence (PL) intensity at low temperature was measured as a function of external fields (up to 3*10/sup 5/ V/cm) in hydrogenated amorphous silicon (a-Si:H). The results are discussed within the framework of the recombination of geminate pairs together with basic physical phenomena such as carrier separation during thermalization trapping of photoexcited carriers in band tails, and possible subsequent reemission or tunneling out of traps. It is concluded that separation of carriers during relaxation in extended and flat tail states is the dominant process for the field quenching of PL intensity. But other processes such as Poole-Frenkel emission and tunneling out of traps cannot be ruled out totally. The basic idea of carrier separation is supported by consistent values for the average mobility from both the quenching of PL intensity with electric fields and the concomitant energy shift of the maximum in the PL spectra.<>
{"title":"Photoluminescence quenching by electric fields in hydrogenated amorphous silicon","authors":"T. Muschik, R. Schwarz, H. Curtins, M. Favre","doi":"10.1109/PVSC.1988.105686","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105686","url":null,"abstract":"The decrease of photoluminescence (PL) intensity at low temperature was measured as a function of external fields (up to 3*10/sup 5/ V/cm) in hydrogenated amorphous silicon (a-Si:H). The results are discussed within the framework of the recombination of geminate pairs together with basic physical phenomena such as carrier separation during thermalization trapping of photoexcited carriers in band tails, and possible subsequent reemission or tunneling out of traps. It is concluded that separation of carriers during relaxation in extended and flat tail states is the dominant process for the field quenching of PL intensity. But other processes such as Poole-Frenkel emission and tunneling out of traps cannot be ruled out totally. The basic idea of carrier separation is supported by consistent values for the average mobility from both the quenching of PL intensity with electric fields and the concomitant energy shift of the maximum in the PL spectra.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"118 1","pages":"191-195 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77397337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105735
D. Meier, J. Spitznagel, J. Greggi, R. Campbell
Antimony has been explored as a dopant in dendritic web silicon in an attempt to achieve uniformity in resistivity through the thickness and along the length of the web ribbon, and to inhibit the formation of deleterious oxide precipitates. The desired uniformity was achieved, making possible the fabrication of efficient, n-base bifacial cells using high-resistivity (10-100 Omega -cm) web and the growth of web over long periods of time (five days) without replenishing the dopant in the melt. Antimony-doped web cells were fabricated with measured hole diffusion lengths up to 333 mu m and hole lifetimes up to 66 mu s. Such diffusion lengths significantly exceed the typical web thickness (100-125 mu m), thereby satisfying an important requirement for high-efficiency cells. Web cell efficiencies up to 16.7% were measured. It is concluded that the superior electrical properties obtained for some cells may be associated more with appropriate growth conditions (few dislocations) than with the action of antimony in inhibiting the formation of SiO/sub x/ precipitates.<>
{"title":"Antimony-doped dendritic web silicon solar cells","authors":"D. Meier, J. Spitznagel, J. Greggi, R. Campbell","doi":"10.1109/PVSC.1988.105735","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105735","url":null,"abstract":"Antimony has been explored as a dopant in dendritic web silicon in an attempt to achieve uniformity in resistivity through the thickness and along the length of the web ribbon, and to inhibit the formation of deleterious oxide precipitates. The desired uniformity was achieved, making possible the fabrication of efficient, n-base bifacial cells using high-resistivity (10-100 Omega -cm) web and the growth of web over long periods of time (five days) without replenishing the dopant in the melt. Antimony-doped web cells were fabricated with measured hole diffusion lengths up to 333 mu m and hole lifetimes up to 66 mu s. Such diffusion lengths significantly exceed the typical web thickness (100-125 mu m), thereby satisfying an important requirement for high-efficiency cells. Web cell efficiencies up to 16.7% were measured. It is concluded that the superior electrical properties obtained for some cells may be associated more with appropriate growth conditions (few dislocations) than with the action of antimony in inhibiting the formation of SiO/sub x/ precipitates.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"3 1","pages":"415-422 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79013991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105932
A. Goetzberger, A. Rauber
The status of techniques for the production of sheets, ribbons, and foils of silicon for solar cells is reviewed. Technical problems and economic constraints are analyzed. The horizontal support web technique relies on a wedge-shaped growth interface which decouples the pulling velocity and the growth velocity which are nearly perpendicular to each other. The growing ribbon floats on a silicon melt that is contained in a long silicon crucible and is withdrawn to one side. In the ramp assistant foil technique, the silicon melt is contained in a relatively flat crucible that is open on one side. A preheated substrate is moved across this opening, and some of the melt solidifies on the surface. The silicon-sheets-from-powder technique starts from Si powder or granular silicon (grain size: 50-500 mu m). Three steps are needed to obtain the final ribbon. It is concluded that although the basic ideas as well as the results of these three methods are very distinct, evaluation of their respective merits is difficult.<>
{"title":"Development in silicon sheet technologies","authors":"A. Goetzberger, A. Rauber","doi":"10.1109/PVSC.1988.105932","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105932","url":null,"abstract":"The status of techniques for the production of sheets, ribbons, and foils of silicon for solar cells is reviewed. Technical problems and economic constraints are analyzed. The horizontal support web technique relies on a wedge-shaped growth interface which decouples the pulling velocity and the growth velocity which are nearly perpendicular to each other. The growing ribbon floats on a silicon melt that is contained in a long silicon crucible and is withdrawn to one side. In the ramp assistant foil technique, the silicon melt is contained in a relatively flat crucible that is open on one side. A preheated substrate is moved across this opening, and some of the melt solidifies on the surface. The silicon-sheets-from-powder technique starts from Si powder or granular silicon (grain size: 50-500 mu m). Three steps are needed to obtain the final ribbon. It is concluded that although the basic ideas as well as the results of these three methods are very distinct, evaluation of their respective merits is difficult.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"96 1","pages":"1371-1374 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79067418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105834
G. Augustine, A.W. Smith, A. Rohatgi, C. Keavney
InP solar cells were modeled before and after proton irradiation using a PC-1D computer model. It was necessary to include bandgap narrowing in the n/sup +/ emitter to match the calculated and measured quantum efficiency, leakage current, and cell data simultaneously. A high-efficiency ( approximately=18.2%, AM0) InP solar cell was fabricated and modeled successfully. Guidelines are provided for achieving greater than 22% efficiency for InP cells. A 10 MeV proton irradiation with a dose of 2*10/sup 13/ cm/sup -2/ reduces the cell performance of a 16.3% cell to 11% by introducing the deep levels at an E/sub v/ of +0.29 eV and an E/sub v/ of +0.52 eV. Modeling showed that this performance degradation is associated with a decrease in bulk lifetime from 0.75 to 0.028 ns with no appreciable change in front surface recombination velocity.<>
{"title":"Characterization and modeling of InP solar cells","authors":"G. Augustine, A.W. Smith, A. Rohatgi, C. Keavney","doi":"10.1109/PVSC.1988.105834","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105834","url":null,"abstract":"InP solar cells were modeled before and after proton irradiation using a PC-1D computer model. It was necessary to include bandgap narrowing in the n/sup +/ emitter to match the calculated and measured quantum efficiency, leakage current, and cell data simultaneously. A high-efficiency ( approximately=18.2%, AM0) InP solar cell was fabricated and modeled successfully. Guidelines are provided for achieving greater than 22% efficiency for InP cells. A 10 MeV proton irradiation with a dose of 2*10/sup 13/ cm/sup -2/ reduces the cell performance of a 16.3% cell to 11% by introducing the deep levels at an E/sub v/ of +0.29 eV and an E/sub v/ of +0.52 eV. Modeling showed that this performance degradation is associated with a decrease in bulk lifetime from 0.75 to 0.028 ns with no appreciable change in front surface recombination velocity.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"903-908 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76815706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105852
B. Anspaugh, R. Kachare, P. Iles
The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 29 degrees C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.<>
{"title":"Photon degradation of AlGaAs/GaAs solar cells","authors":"B. Anspaugh, R. Kachare, P. Iles","doi":"10.1109/PVSC.1988.105852","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105852","url":null,"abstract":"The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 29 degrees C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"102 1","pages":"985-989 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74260163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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