Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105731
D. Arvizu
The author discusses recent progress in US crystalline silicon photovoltaic cell technology for both one-sun and concentrating applications. The progress in crystalline silicon technology has manifested itself in improved efficiency and in lower costs of processing and production. Experience over the past eight years with large systems representative of utility-scale applications has been good. It is suggested that there now appear to be several choices within the crystalline silicon technology path that have excellent potential to meet the necessary cost for entry into the utility market. The status of the current research efforts and the direction of the US Department of Energy sponsored crystalline silicon research program are discussed.<>
{"title":"Crystalline silicon photovoltaic cell technology: meeting the challenge for utility power","authors":"D. Arvizu","doi":"10.1109/PVSC.1988.105731","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105731","url":null,"abstract":"The author discusses recent progress in US crystalline silicon photovoltaic cell technology for both one-sun and concentrating applications. The progress in crystalline silicon technology has manifested itself in improved efficiency and in lower costs of processing and production. Experience over the past eight years with large systems representative of utility-scale applications has been good. It is suggested that there now appear to be several choices within the crystalline silicon technology path that have excellent potential to meet the necessary cost for entry into the utility market. The status of the current research efforts and the direction of the US Department of Energy sponsored crystalline silicon research program are discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"397-404 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89208357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105952
K. Mitchell, H.I. Liu
Analyses are presented of greater than 12% efficient ZnO/thin CdS/CIS devices, focusing on spectral response and light and dark current-voltage (I-V) over a broad range of intensities (0.64-100 mW/cm/sup 2/) and temperatures (100-300 K). Other measurements presented include voltage-dependent spectral response, capacitance-conductance versus voltage, frequency, temperature, and CIS film and contact resistance. It is found that recombination controls device performance above 200 K and tunneling and series resistance dominate low-temperature device behavior. 14.1%, 3.5 cm/sup 2/ active area cell and 11.2%, 938 cm/sup 2/ module aperture area efficiencies are reported.<>
{"title":"Device analysis of CuInSe/sub 2/ solar cells","authors":"K. Mitchell, H.I. Liu","doi":"10.1109/PVSC.1988.105952","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105952","url":null,"abstract":"Analyses are presented of greater than 12% efficient ZnO/thin CdS/CIS devices, focusing on spectral response and light and dark current-voltage (I-V) over a broad range of intensities (0.64-100 mW/cm/sup 2/) and temperatures (100-300 K). Other measurements presented include voltage-dependent spectral response, capacitance-conductance versus voltage, frequency, temperature, and CIS film and contact resistance. It is found that recombination controls device performance above 200 K and tunneling and series resistance dominate low-temperature device behavior. 14.1%, 3.5 cm/sup 2/ active area cell and 11.2%, 938 cm/sup 2/ module aperture area efficiencies are reported.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"26 1","pages":"1461-1468 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87089718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105684
H. Pfleiderer, W. Kusian, E. Gunzel, J. Grabmaier
Experimental and simulation results on a-Si p-i-n solar cells are presented. The internal collection efficiency is shown to be a function of wavelength and voltage. The function shows a certain kind of symmetry that is not perfect, but reveals a plateau voltage U/sub p/. A simple photocurrent model is used to explain the experimental results. The model assumes a uniform field through the i-layer. It neglects bulk recombination of photocarriers, but considers surface recombination at the p-i and i-n barriers. A particular voltage, the flatband voltage U/sub F/, causes the field to vanish. A dominant front barrier yields U/sub p/>
{"title":"Flat-band voltage of a-Si pin solar cells from spectral characteristics","authors":"H. Pfleiderer, W. Kusian, E. Gunzel, J. Grabmaier","doi":"10.1109/PVSC.1988.105684","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105684","url":null,"abstract":"Experimental and simulation results on a-Si p-i-n solar cells are presented. The internal collection efficiency is shown to be a function of wavelength and voltage. The function shows a certain kind of symmetry that is not perfect, but reveals a plateau voltage U/sub p/. A simple photocurrent model is used to explain the experimental results. The model assumes a uniform field through the i-layer. It neglects bulk recombination of photocarriers, but considers surface recombination at the p-i and i-n barriers. A particular voltage, the flatband voltage U/sub F/, causes the field to vanish. A dominant front barrier yields U/sub p/<U/sub F/. It is suggested that a symmetric cell should show a sharp center and U/sub p/=U/sub F/.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"76 1","pages":"180-185 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84958852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105929
T. Kobayashi, M. Kimura, Y. Kato, S. Amano, Y. Nakashima, S. Yoshikawa, H. Sugimoto
Achievements and future projects in the fields of polycrystalline and amorphous silicon solar cell manufacturing technologies in Japan are discussed. The target and status of poly-Si solar cell developments in the areas of silicon materials, cast wafers, sheet wafers, and cell fabrication are presented. The target and status of a-Si solar cell development in such areas as high-quality large-area cells, high-productivity low-cost transparent conductive films, and high reliability are also presented.<>
{"title":"Solar cell manufacturing technology in Japan","authors":"T. Kobayashi, M. Kimura, Y. Kato, S. Amano, Y. Nakashima, S. Yoshikawa, H. Sugimoto","doi":"10.1109/PVSC.1988.105929","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105929","url":null,"abstract":"Achievements and future projects in the fields of polycrystalline and amorphous silicon solar cell manufacturing technologies in Japan are discussed. The target and status of poly-Si solar cell developments in the areas of silicon materials, cast wafers, sheet wafers, and cell fabrication are presented. The target and status of a-Si solar cell development in such areas as high-quality large-area cells, high-productivity low-cost transparent conductive films, and high reliability are also presented.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"70 1","pages":"1364-1366 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84120115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105799
R. Mertens, M. Mauk, S. Jain, G. Borghs, R. van Overstraeten
Bandgap narrowing limits the open-circuit voltage of p-n junction solar cells both at low and high-level injection. The authors develop a method to estimate bandgap narrowing (and the accompanying reduction in built-in potential) using capacitance-voltage measurements. They then apply the method to hyperabrupt heavily doped GaAs diodes grown by molecular-beam epitaxy. The measured results clearly indicate substantial bandgap narrowing in heavily doped GaAs.<>
{"title":"Saturated photovoltage, built-in potential and bandgap-narrowing in homojunction solar cells","authors":"R. Mertens, M. Mauk, S. Jain, G. Borghs, R. van Overstraeten","doi":"10.1109/PVSC.1988.105799","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105799","url":null,"abstract":"Bandgap narrowing limits the open-circuit voltage of p-n junction solar cells both at low and high-level injection. The authors develop a method to estimate bandgap narrowing (and the accompanying reduction in built-in potential) using capacitance-voltage measurements. They then apply the method to hyperabrupt heavily doped GaAs diodes grown by molecular-beam epitaxy. The measured results clearly indicate substantial bandgap narrowing in heavily doped GaAs.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"80 1","pages":"735-737 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84180743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105837
D. Marvin, W. Hwang, E. Simburger
The general issue of degradation of optical surfaces on spacecraft is reviewed in order to understand the observed behavior of the Navstar solar cell arrays. The solar arrays on GPS Navstars 1-6 have shown anomalous degradation during the 5-year mission life and beyond. The departure from predicted performance consists of an extra 2.5% per year degradation in excess of the radiation model estimates. Examination of optical solar reflector (OSR) data from a variety of spacecraft reveals variations in OSR degradation rates which correlate with the vehicle design. These data support the idea that contaminants outgassing from the vehicle are photodeposited on the optical surfaces, leading to degradation of their reflectivity. Contamination data taken from an OSR flown on Navstar 5 are used to predict the solar cell array degradation. The predicted effect of contamination on the array output is consistent with the observed behavior of the five Block I vehicles.<>
{"title":"Anomalous solar array performance on GPS","authors":"D. Marvin, W. Hwang, E. Simburger","doi":"10.1109/PVSC.1988.105837","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105837","url":null,"abstract":"The general issue of degradation of optical surfaces on spacecraft is reviewed in order to understand the observed behavior of the Navstar solar cell arrays. The solar arrays on GPS Navstars 1-6 have shown anomalous degradation during the 5-year mission life and beyond. The departure from predicted performance consists of an extra 2.5% per year degradation in excess of the radiation model estimates. Examination of optical solar reflector (OSR) data from a variety of spacecraft reveals variations in OSR degradation rates which correlate with the vehicle design. These data support the idea that contaminants outgassing from the vehicle are photodeposited on the optical surfaces, leading to degradation of their reflectivity. Contamination data taken from an OSR flown on Navstar 5 are used to predict the solar cell array degradation. The predicted effect of contamination on the array output is consistent with the observed behavior of the five Block I vehicles.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"21 1","pages":"913-917"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86191211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105921
C. Chiang
The development of solar cell assemblies with high efficiency, improved reliability, and low cost is described. Specific topics discussed include optimization of cell assemblies, selection and evaluation of adhesives and insulators, fabrication methods, and assembly procedures. Important advances in soldering and reliability are reported, and the cell assembly for the Sandia Baseline Module III is described. It is concluded that soft soldering with Sn62 solder is a practical, reliable, simple, and inexpensive way to bond solar cells to copper heat spreaders.<>
{"title":"Design of cell mounts for photovoltaic concentrator modules","authors":"C. Chiang","doi":"10.1109/PVSC.1988.105921","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105921","url":null,"abstract":"The development of solar cell assemblies with high efficiency, improved reliability, and low cost is described. Specific topics discussed include optimization of cell assemblies, selection and evaluation of adhesives and insulators, fabrication methods, and assembly procedures. Important advances in soldering and reliability are reported, and the cell assembly for the Sandia Baseline Module III is described. It is concluded that soft soldering with Sn62 solder is a practical, reliable, simple, and inexpensive way to bond solar cells to copper heat spreaders.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"304 1","pages":"1327-1332 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82543342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105827
H. Nahra
The methodology used to assess the probability of no impact of space debris and meteoroids on a spacecraft structure is applied to the space station solar cell array assembly. Starting with space debris and meteoroid flux models, the: (i) projected surface area of the solar cell string circuit of the solar array panel and the mast longeron; (ii) the design lifetime; and (iii) the probability of no impact on the solar mast and solar cell string circuits are determined as a function of particle size. The probability of no impact on the cell string circuits is used to derive the probability of no open-circuit panel. The probability of meeting a certain power requirement at the end of the design lifetime is then calculated as a function of impacting particle size. Coupled with a penetration and damage model correlation that relates the particle size to penetration depth and damage, the results of this analysis can be used to determine the probability of meeting the power requirements, given a degree of redundancy.<>
{"title":"Assessment of the effects of space debris and meteoroids environment on the space station solar array assembly","authors":"H. Nahra","doi":"10.1109/PVSC.1988.105827","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105827","url":null,"abstract":"The methodology used to assess the probability of no impact of space debris and meteoroids on a spacecraft structure is applied to the space station solar cell array assembly. Starting with space debris and meteoroid flux models, the: (i) projected surface area of the solar cell string circuit of the solar array panel and the mast longeron; (ii) the design lifetime; and (iii) the probability of no impact on the solar mast and solar cell string circuits are determined as a function of particle size. The probability of no impact on the cell string circuits is used to derive the probability of no open-circuit panel. The probability of meeting a certain power requirement at the end of the design lifetime is then calculated as a function of impacting particle size. Coupled with a penetration and damage model correlation that relates the particle size to penetration depth and damage, the results of this analysis can be used to determine the probability of meeting the power requirements, given a degree of redundancy.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"73 1","pages":"868-873 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82878761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105713
G. Willeke, R. Martins
Diffraction and other structural measurements on n-type SiC thin films prepared in a TCDDC (two consecutive decomposition and deposition chamber) system indicate the presence of Si microcrystals (without evidence for SiC crystallites). Weakly absorbing, highly conductive layers ( sigma >or=10/sup -1/ ( Omega -cm)/sup -1/) contain up to 20 at.% C and 25 at.% O. The optoelectronic properties of these films can be explained in terms of a sufficient volume fraction (above the percolation threshold) of Si microcrystals surrounded by an a-Si:C,O,H matrix.<>
{"title":"Structural properties of weakly absorbing highly conductive SiC thin films prepared in a TCDDC system","authors":"G. Willeke, R. Martins","doi":"10.1109/PVSC.1988.105713","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105713","url":null,"abstract":"Diffraction and other structural measurements on n-type SiC thin films prepared in a TCDDC (two consecutive decomposition and deposition chamber) system indicate the presence of Si microcrystals (without evidence for SiC crystallites). Weakly absorbing, highly conductive layers ( sigma >or=10/sup -1/ ( Omega -cm)/sup -1/) contain up to 20 at.% C and 25 at.% O. The optoelectronic properties of these films can be explained in terms of a sufficient volume fraction (above the percolation threshold) of Si microcrystals surrounded by an a-Si:C,O,H matrix.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"27 1","pages":"320-323 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84056478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105867
T. Hoff, J. Iannucci
The author addresses profit from the angle of increasing the value of PV in a utility market. The analysis is applied to Pacific Gas and Electric Company's system. Two basic questions are addressed. First, Which is of greatest value to PG&E: a large PV plant or several small plants distributed throughout the system? Second, Where should the plant or plants be sited? The value calculations use simulated performance data based on data from PG&E's solar insolation monitoring project (SIMP). Fourteen representative sites throughout PG&E's service territory are evaluated in order to select the site or configuration of sites with the highest value. The results lead to the conclusion that, all else being equal, the highest value is provided by one large PV plant rather than a combination of several smaller plants distributed throughout the service territory.<>
{"title":"Siting PV plants: a value based approach","authors":"T. Hoff, J. Iannucci","doi":"10.1109/PVSC.1988.105867","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105867","url":null,"abstract":"The author addresses profit from the angle of increasing the value of PV in a utility market. The analysis is applied to Pacific Gas and Electric Company's system. Two basic questions are addressed. First, Which is of greatest value to PG&E: a large PV plant or several small plants distributed throughout the system? Second, Where should the plant or plants be sited? The value calculations use simulated performance data based on data from PG&E's solar insolation monitoring project (SIMP). Fourteen representative sites throughout PG&E's service territory are evaluated in order to select the site or configuration of sites with the highest value. The results lead to the conclusion that, all else being equal, the highest value is provided by one large PV plant rather than a combination of several smaller plants distributed throughout the service territory.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"65 1","pages":"1056-1061 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84428052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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