Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105882
D. Carroll
The design and planned production of a cost-effective, high-concentration point-focus Si array for utility-scale applications is discussed. Design considerations such as cell assemblies, optics, modules, and arrays are also discussed. The results indicate that the goals of high reliability, low maintenance, long system life, and an installed cost on the order of $2 per peak watt are achievable in the near term.<>
{"title":"Alpha Solarco's high-concentration photovoltaic array development program","authors":"D. Carroll","doi":"10.1109/PVSC.1988.105882","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105882","url":null,"abstract":"The design and planned production of a cost-effective, high-concentration point-focus Si array for utility-scale applications is discussed. Design considerations such as cell assemblies, optics, modules, and arrays are also discussed. The results indicate that the goals of high reliability, low maintenance, long system life, and an installed cost on the order of $2 per peak watt are achievable in the near term.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"41 1","pages":"1138-1143 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90941403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105684
H. Pfleiderer, W. Kusian, E. Gunzel, J. Grabmaier
Experimental and simulation results on a-Si p-i-n solar cells are presented. The internal collection efficiency is shown to be a function of wavelength and voltage. The function shows a certain kind of symmetry that is not perfect, but reveals a plateau voltage U/sub p/. A simple photocurrent model is used to explain the experimental results. The model assumes a uniform field through the i-layer. It neglects bulk recombination of photocarriers, but considers surface recombination at the p-i and i-n barriers. A particular voltage, the flatband voltage U/sub F/, causes the field to vanish. A dominant front barrier yields U/sub p/>
{"title":"Flat-band voltage of a-Si pin solar cells from spectral characteristics","authors":"H. Pfleiderer, W. Kusian, E. Gunzel, J. Grabmaier","doi":"10.1109/PVSC.1988.105684","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105684","url":null,"abstract":"Experimental and simulation results on a-Si p-i-n solar cells are presented. The internal collection efficiency is shown to be a function of wavelength and voltage. The function shows a certain kind of symmetry that is not perfect, but reveals a plateau voltage U/sub p/. A simple photocurrent model is used to explain the experimental results. The model assumes a uniform field through the i-layer. It neglects bulk recombination of photocarriers, but considers surface recombination at the p-i and i-n barriers. A particular voltage, the flatband voltage U/sub F/, causes the field to vanish. A dominant front barrier yields U/sub p/<U/sub F/. It is suggested that a symmetric cell should show a sharp center and U/sub p/=U/sub F/.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"76 1","pages":"180-185 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84958852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105653
E.S. Sabisky, J. Stone
The authors review the successes of a-Si:H photovoltaics (PV) technology as well as the status of device efficiencies, markets, and commercialization. They propose technological goals for the years 1995 and 2000. These goals are, respectively: the demonstration of the commercial feasibility of PV-generated power by a selling price of 10-15 cents/kWh (1988 dollars); and a reduction of the selling price of PV-generated electricity to approximately half the 1995 price. An approach to achieving these goals is outlined.<>
{"title":"The odyssey of thin-film amorphous silicon photovoltaics","authors":"E.S. Sabisky, J. Stone","doi":"10.1109/PVSC.1988.105653","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105653","url":null,"abstract":"The authors review the successes of a-Si:H photovoltaics (PV) technology as well as the status of device efficiencies, markets, and commercialization. They propose technological goals for the years 1995 and 2000. These goals are, respectively: the demonstration of the commercial feasibility of PV-generated power by a selling price of 10-15 cents/kWh (1988 dollars); and a reduction of the selling price of PV-generated electricity to approximately half the 1995 price. An approach to achieving these goals is outlined.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"39-47 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77821885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105899
L. Mrig, S. Rummel, D. Waddington, R. Deblasio
Stability performance test results are presented for tests conducted at SERI on single and tandem amorphous silicon solar cell modules and submodules made by various manufacturers. Two sets of commercially available first-generation single-junction amorphous silicon solar cell modules manufactured by two different manufacturers, one single-junction submodule fabricated under a SERI subcontract, and one tandem amorphous silicon research submodule fabricated by another SERI subcontractor are described. Based on the test data, the efficiency degradation for the two best first-generation single-junction amorphous silicon modules for the test period of three to four years is on the order of 20%.<>
{"title":"Outdoor stability performance of single and tandem amorphous silicon modules","authors":"L. Mrig, S. Rummel, D. Waddington, R. Deblasio","doi":"10.1109/PVSC.1988.105899","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105899","url":null,"abstract":"Stability performance test results are presented for tests conducted at SERI on single and tandem amorphous silicon solar cell modules and submodules made by various manufacturers. Two sets of commercially available first-generation single-junction amorphous silicon solar cell modules manufactured by two different manufacturers, one single-junction submodule fabricated under a SERI subcontract, and one tandem amorphous silicon research submodule fabricated by another SERI subcontractor are described. Based on the test data, the efficiency degradation for the two best first-generation single-junction amorphous silicon modules for the test period of three to four years is on the order of 20%.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"278 1","pages":"1221-1224 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77832767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105767
F. Sanii, R. J. Schwartz, R.F. Pierret, W. Au
A measurement technique is described which makes it possible to monitor the lifetime and surface recombination velocity of the starting wafer as well as a partially or completely processed wafer in the Si solar-cell fabrication process. This technique uses an infrared laser to monitor the carrier concentration via free carrier absorption while periodically exciting free carriers by means of a visible laser. The excited laser is sinusoidally modulated with an electro-optical modulator at frequencies of 100 Hz to 100 kHz. The free carriers generated by the exciter beam attenuate the probe beam, and the resultant output is detected with a phase-sensitive lock-in amplifier. The quantities measured are the amplitude and the phase of the detected signal relative to the exciter beam. The measured data are then fitted to theoretical expressions, and the bulk lifetime and surface recombination velocities are determined. The amplitude and phase are independent quantities, and the computed values from the two sets of data provide a self-consistency test.<>
{"title":"The measurement of bulk and surface recombination by means of modulated free carrier absorption","authors":"F. Sanii, R. J. Schwartz, R.F. Pierret, W. Au","doi":"10.1109/PVSC.1988.105767","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105767","url":null,"abstract":"A measurement technique is described which makes it possible to monitor the lifetime and surface recombination velocity of the starting wafer as well as a partially or completely processed wafer in the Si solar-cell fabrication process. This technique uses an infrared laser to monitor the carrier concentration via free carrier absorption while periodically exciting free carriers by means of a visible laser. The excited laser is sinusoidally modulated with an electro-optical modulator at frequencies of 100 Hz to 100 kHz. The free carriers generated by the exciter beam attenuate the probe beam, and the resultant output is detected with a phase-sensitive lock-in amplifier. The quantities measured are the amplitude and the phase of the detected signal relative to the exciter beam. The measured data are then fitted to theoretical expressions, and the bulk lifetime and surface recombination velocities are determined. The amplitude and phase are independent quantities, and the computed values from the two sets of data provide a self-consistency test.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"11 1","pages":"575-580 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82341668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105805
R. E. Hart, D. Brinker, K. Emery
Measurements of high-voltage (V/sub oc/ of 1.2 V) gallium arsenide on germanium tandem junction solar cells at air mass 0.22 showed that the insolation in the red portion of the solar spectrum is insufficient to obtain high fill factor. On the basis of measurements in the LeRC X-25L solar simulator, these cells were believed to be as efficient as 21.68% AM0. Solar simulator spectrum errors in the red end allowed the fill factor to be as high as 78.7%. When a similar cell's current-voltage characteristic was measured at high altitude in the NASA Lear Jet Facility, a loss of 15 percentage points in fill factor was observed. This decrease was caused by insufficient current in the germanium bottom cell of the tandem stack.<>
在空气质量为0.22的情况下，对锗串联结太阳能电池进行高压(V/sub oc/ of 1.2 V)砷化镓的测量表明，太阳光谱红色部分的日照不足以获得高的填充因子。在LeRC X-25L太阳模拟器测量的基础上，这些电池被认为效率为21.68% AM0。太阳模拟器的光谱误差在红端允许填充因子高达78.7%。当在美国宇航局李尔喷气设施的高空测量类似电池的电流-电压特性时，观察到填充系数损失了15个百分点。这种下降是由于串联堆的锗底部电池电流不足造成的。
{"title":"High altitude current-voltage measurement of GaAs/Ge solar cells","authors":"R. E. Hart, D. Brinker, K. Emery","doi":"10.1109/PVSC.1988.105805","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105805","url":null,"abstract":"Measurements of high-voltage (V/sub oc/ of 1.2 V) gallium arsenide on germanium tandem junction solar cells at air mass 0.22 showed that the insolation in the red portion of the solar spectrum is insufficient to obtain high fill factor. On the basis of measurements in the LeRC X-25L solar simulator, these cells were believed to be as efficient as 21.68% AM0. Solar simulator spectrum errors in the red end allowed the fill factor to be as high as 78.7%. When a similar cell's current-voltage characteristic was measured at high altitude in the NASA Lear Jet Facility, a loss of 15 percentage points in fill factor was observed. This decrease was caused by insufficient current in the germanium bottom cell of the tandem stack.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"148 1","pages":"764-765 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80655296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105987
H. El Ghitani, S. Martinuzzi
Green's function is used to establish a three-dimensional model to obtain a detailed rigorous analytical expression of the effect of dislocations. The predictions of the model were verified by measuring the photocurrent, the spectral response, and the effective diffusion lengths of minority carriers (L/sub eff/) and by evaluating the dislocation etch pit density. Three materials are considered, POLYX, SILSO, and SEMIX, which differ by the value of the diffusion length (L/sub n/) in the homogeneous regions of the bulk. It is found that the values of J/sub sc/ and L/sub eff/ are dependent on N/sub dis/ and S/sub d/ provided they are greater than 10/sup 4/ cm/sup -2/ and 10/sup 4/ cm-s/sup -1/, respectively. The computed variations also depend on the value of the diffusion length in the homogeneous region of the bulk material. A reasonable agreement is found with experimental results obtained with large-grained polycrystalline materials such as SILSO and POLYX.<>
{"title":"Modelling of the influence of dislocations on effective diffusion length and photocurrent of polycrystalline silicon cells","authors":"H. El Ghitani, S. Martinuzzi","doi":"10.1109/PVSC.1988.105987","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105987","url":null,"abstract":"Green's function is used to establish a three-dimensional model to obtain a detailed rigorous analytical expression of the effect of dislocations. The predictions of the model were verified by measuring the photocurrent, the spectral response, and the effective diffusion lengths of minority carriers (L/sub eff/) and by evaluating the dislocation etch pit density. Three materials are considered, POLYX, SILSO, and SEMIX, which differ by the value of the diffusion length (L/sub n/) in the homogeneous regions of the bulk. It is found that the values of J/sub sc/ and L/sub eff/ are dependent on N/sub dis/ and S/sub d/ provided they are greater than 10/sup 4/ cm/sup -2/ and 10/sup 4/ cm-s/sup -1/, respectively. The computed variations also depend on the value of the diffusion length in the homogeneous region of the bulk material. A reasonable agreement is found with experimental results obtained with large-grained polycrystalline materials such as SILSO and POLYX.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"10 1","pages":"1624-1628 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72967522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105996
D. Cahen, A. Kisilev, V. Marcu, H. Schock, R. Noufi
The effective electronic parameters and the optical bandgap of CuGaSe/sub 2/ and Cu(Ga,In)Se/sub 2/ films were determined by using an organic liquid electrolyte to form a Schottky barrier to the films. Trends in the electronic parameters, composition, and additional information were used in a defect chemical framework to explore the effects of Ga substitution/doping on CuInSe/sub 2/. Values for optical and (effective) electronic parameters for several CuGaSe/sub 2/ films are reported. Photocurrent-wavelength data are also shown. In CuGaSe/sub 2/ (as in CuInSe/sub 2/), film stoichiometry needs to be reasonably well controlled, close to Cu/Ga=1, according to the results.<>
{"title":"Photoelectrochemical characterization of CuGaSe/sub 2/ and Cu(Ga,In)Se/sub 2/ films and defect chemical implications for solar cell performance","authors":"D. Cahen, A. Kisilev, V. Marcu, H. Schock, R. Noufi","doi":"10.1109/PVSC.1988.105996","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105996","url":null,"abstract":"The effective electronic parameters and the optical bandgap of CuGaSe/sub 2/ and Cu(Ga,In)Se/sub 2/ films were determined by using an organic liquid electrolyte to form a Schottky barrier to the films. Trends in the electronic parameters, composition, and additional information were used in a defect chemical framework to explore the effects of Ga substitution/doping on CuInSe/sub 2/. Values for optical and (effective) electronic parameters for several CuGaSe/sub 2/ films are reported. Photocurrent-wavelength data are also shown. In CuGaSe/sub 2/ (as in CuInSe/sub 2/), film stoichiometry needs to be reasonably well controlled, close to Cu/Ga=1, according to the results.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"75 1","pages":"1437-1442 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81906768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105670
Y. Tsuo, Y. Xu, A. Mascarenhas, S. Deb, A. K. Barua
The ion-beam hydrogenation of undoped amorphous silicon for solar cells obtained by dehydrogenation of glow-discharge-deposited a-Si:H, by glow-discharge deposition at 480 degrees C, and by RF magnetron-sputter deposition was investigated. A Kaufman ion source was used to introduce hydrogen atoms into the a-Si:H. Highly photosensitive a-Si:H films with up to 20 at.% hydrogen bonded predominantly as monohydrides were obtained. The authors report results of Raman Scattering measurements of magnetron-sputtering-deposited amorphous silicon before and after hydrogenation, comparisons of ion-beam and RF posthydrogenation techniques, and a possible application of the ion-beam hydrogenation technique.<>
{"title":"Recent results on ion-beam hydrogenation of amorphous silicon","authors":"Y. Tsuo, Y. Xu, A. Mascarenhas, S. Deb, A. K. Barua","doi":"10.1109/PVSC.1988.105670","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105670","url":null,"abstract":"The ion-beam hydrogenation of undoped amorphous silicon for solar cells obtained by dehydrogenation of glow-discharge-deposited a-Si:H, by glow-discharge deposition at 480 degrees C, and by RF magnetron-sputter deposition was investigated. A Kaufman ion source was used to introduce hydrogen atoms into the a-Si:H. Highly photosensitive a-Si:H films with up to 20 at.% hydrogen bonded predominantly as monohydrides were obtained. The authors report results of Raman Scattering measurements of magnetron-sputtering-deposited amorphous silicon before and after hydrogenation, comparisons of ion-beam and RF posthydrogenation techniques, and a possible application of the ion-beam hydrogenation technique.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"10 1","pages":"119-122 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81871048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105909
R. Pratt, J. Burdick
Some key results from the first 16 months of operation of a 4 kW utility-interconnected photovoltaic array consisting of Sovonics R-100 tandem a-Si alloy photovoltaic modules are presented. A Campbell Scientific 21X micrologger was installed for recording DC and AC power, insolation, and temperature. Availability of the PV system is greater than 90%. The percentage of total hours in a month that the system is delivering AC power to the grid is 35.8%.<>
{"title":"Performance of a 4 kW amorphous-silicon alloy photovoltaic array at Oakland Community College, Auburn Hills, Michigan","authors":"R. Pratt, J. Burdick","doi":"10.1109/PVSC.1988.105909","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105909","url":null,"abstract":"Some key results from the first 16 months of operation of a 4 kW utility-interconnected photovoltaic array consisting of Sovonics R-100 tandem a-Si alloy photovoltaic modules are presented. A Campbell Scientific 21X micrologger was installed for recording DC and AC power, insolation, and temperature. Availability of the PV system is greater than 90%. The percentage of total hours in a month that the system is delivering AC power to the grid is 35.8%.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"61 1","pages":"1272-1277 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78543347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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