Advanced Electronic Materials最新文献

Freestanding complex oxide membranes enable the release and transfer of epitaxial films, offering new design freedoms for next-generation electronics. While the LaAlO₃/SrTiO₃ (LAO/STO) heterostructure exhibits remarkable tunable conductivity at its interface, the active interface remains buried beneath the substrate, limiting access to this functionality. Here, we demonstrate how the LAO/STO heterostructure, in membrane form, can be flipped and precisely positioned on silicon and other platforms using polymer-free micromanipulation. The transferred membranes preserve atomically smooth surfaces, high crystallinity, and key electronic properties. Through the 44-nm insulating STO layer, ultra-low-voltage electron-beam lithography (ULV-EBL) writes conductive nanostructures at the now-accessible STO/LAO interface, offering the potential to function as programmable local gates that modulate charge carriers in the underlying silicon. The platform establishes a general strategy for integrating complex oxide heterostructures with semiconductors, quantum materials, and flexible substrates, enabling new architectures for reprogrammable nanoelectronic devices.

Precise structural design and controllable fabrication of single-wall carbon nanotube (SWCNT) heterojunctions are key to harnessing their optoelectronic performance and advancing high-performance optoelectronic devices. Here, we integrated Rhodamine B (RhB) molecules into (6,5) SWCNT films via a simple immersion method, thereby forming a Type I heterojunction. A dual enhancement of photoluminescence (PL) and photoelectric conversion efficiency was experimentally observed for the first time in Type I heterojunction films, with external PL efficiency increasing by more than two-fold and photoelectric conversion efficiency improving by approximately one order of magnitude. These enhancements are attributed to the strong π–π stacking interactions between RhB and (6,5) SWCNTs, as well as the favorable matching of their absorption bands, which facilitates efficient exciton energy transfer from RhB to SWCNTs and substantially increases exciton density in the (6,5) SWCNT films. Additionally, under illumination, the photoinduced electron transfer from RhB to SWCNTs results in the accumulation of positive charges within the RhB layer, triggering the photogating effect and further enhancing the photoconductivity gain. The findings provide new insights into exciton and electron transfer processes in Type-I heterojunctions for enhancing the photoelectric performance of SWCNT films, offering guidance for the design of high-performance photoelectric devices.

High-pressure physics provides a powerful means of tuning interatomic interactions, enabling the discovery of novel structural and physical phenomena in materials. Chromium telluride, a transition metal chalcogenide, is particularly responsive to such external stimuli, exhibiting a broad spectrum of pressure-, temperature-, and stoichiometry-dependent properties. One of its defining features is a pressure-induced structural transition from a NiAs-type to an MnP-type phase at approximately 13 GPa, as experimentally reported by previous literature. In this work, we use density functional theory to investigate how the thermal properties — specifically, the lattice thermal conductivity — evolve across this structural transition. The complex interplay between structure and magnetism under pressure highlights the highly tunable and anisotropic nature of CrTe.

Environment-adaptabilities are always critical for optical and electrical components while Ga₂O₃ thin films have been attractive in UV photodetectors, flexible optoelectronics and multifunctional integrations. Here, we present the atomic-layer deposited amorphous Ga₂O₃ thin films and the solar-blind UV photodetectors with temperature-adaptabilities across a wide temperature range of 100–450 K. The devices exhibit an excellent responsivity (∼3.99 mA/W) and detectivity (∼1.19 × 10¹¹ Jones) at 120 K, and remain operational during temperature changes between 100 and 450 K. The distinct non-monotonic variations that were observed in the UV photoresponses may originate from the thermal-driven evolution of oxygen-vacancy-related trap states. We believe that these investigations will provide an alternative approach to understanding amorphous Ga₂O₃ thin films and temperature-tolerant devices, and exploring reliable integration used for sensing and observation under extreme environment changes.

Gallium oxide (Ga₂O₃) is an ultra-wide bandgap semiconductor with several polymorphs, among which the orthorhombic κ-phase is particularly attractive for high-power electronics, non-volatile memory, and charge-tunable devices due to its large spontaneous polarization and potential ferroelectric behavior. However, commonly grown κ-Ga₂O₃ thin films contain nanoscale rotational domains, hindering the characterization of intrinsic properties and complicating device integration. In this work, we present the first combined experimental and theoretical Raman spectroscopy study of single-domain κ-Ga₂O₃ thin films grown on orthorhombic ε-GaFeO₃ substrates. Using polarization- and angle-resolved Raman spectroscopy, we identify over 100 phonon modes, which correlate with 117 modes calculated via density functional perturbation theory. A systematic nomenclature is introduced based on mode symmetry and frequency to aid identification and comparison across future studies. Direct comparison with rotational-domain samples shows that single-domain films exhibit pronounced angle-dependent Raman intensities consistent with theoretical selection rules, features that are obscured in multi-domain films due to domain averaging. These findings establish polarization angle-resolved Raman spectroscopy as an effective alternative to XRD and TEM for domain structure analysis and provide a robust framework for further studies of κ-Ga₂O₃ in electronic applications.

Halide perovskites have recently gained attention for use as electrode materials in lithium-ion batteries. However, lead halide perovskites cannot withstand the harsh chemical environment in a standard lithium battery and tend to degrade after a few cycles. Here, we investigated a class of lead-free all-inorganic zinc perovskite halides (Cs₂ZnX₄; X = Cl or Br) as the Li⁺ storage materials in the lithium-ion batteries (LIB). These materials can be synthesized by a facile mechanochemical method and exhibit a high lithium storage capacity with impressive rate performance and stability. We further improved the performance by evaporating a thin layer of C₆₀ on the pristine electrode, enabling faster Li⁺ ion transport. We found that the C₆₀ layer prevents direct contact between the electrode and electrolyte, thereby deterring side reactions and providing superior mechanical stability. The Cs₂ZnCl₄ LIB achieved an initial discharge capacity of 349 mAh g⁻¹ and a reversible capacity of 98 mAh g⁻¹ after 100-cycles, with continuing functionality up to 500 cycles. Unlike traditional perovskites, these zinc-based materials may lead to high performance, non-toxic Li-ion intercalation layers that are both stable and efficient.

Research on monolayer materials remains at the forefront of materials research. Here, we present a systematic study of graphenic carbon layers focusing on their structural evolution and electrical properties as film thickness approaches the atomic limit. The ultrathin carbon films are obtained from the pyrolysis of photoresist films (PPF) directly on the target substrate, also allowing structuring by lithographic means. Thus, pre-defined graphenic structures can be realized with controlled thickness, down to the sub-nanometer scale as determined by atomic force microscopy. X-ray photoelectron spectroscopy confirms the predominant sp² hybridization of our films, transmission electron microscopy reveals domains with hexagonal atomic structure, and Raman spectroscopy shows signatures of evolving nanocrystallinity with decreasing film thickness until dimensional confinement imposes a lower limit. We further demonstrate the functionality of the sub-nanometric pyrolyzed polymer film as a chemiresistive NO₂ sensor. The films' scalability and patternability across multiple length scales, together with their chemical inertness and biocompatibility, make them promising candidates for future applications.

Insulating and conductive self-healing elastomers represent a high-potential paradigm shift in the development of soft radio-frequency (RF) electronics applications, such as coplanar waveguide (CWP) RF transmission lines. In this article, we present a novel stretchable, self-healing CPW RF transmission line that uses self-healing materials for both the substrate and the conductor. The used self-healing liquid metal elastomer composite achieves a conductivity of approximately 2000 S cm⁻¹ at zero strain. S-parameter measurements of reflection (S₁₁) and transmission (S₂₁) were performed for the coplanar waveguide as the electrical length was uniaxially stretched up to 100%. The stretchable and self-healing CPW RF transmission lines maintain remarkable consistency in transmission response at 1–6 GHz when mechanically stretched at 0%–50% for 1000 stretch-release cycles. To the best of our knowledge, this is the first proof-of-concept demonstration of a fully self-healing CPW transmission line, paving the way for durable and reconfigurable soft RF devices.