Advanced Electronic Materials最新文献

Magneto-ionic control of metal oxide/metal films provides a pathway to voltage-tunable magnetoelectronic devices with high energy efficiency. So far, magneto-ionic research mainly focuses on Co-based films, while Fe-Ni alloy films, despite their high industrial relevance, have not been studied systematically. In this work, a combined in situ Kerr microscopy and electrochemical analysis demonstrates magneto-ionic control of coercivity in nanocrystalline Fe-Ni alloy films across the whole compositional range. The required voltage is low (∼1 V) and decreases with increasing Ni content, presumably relating to the nobler nature of Ni versus Fe. For Fe-rich alloys, a large voltage-induced change of coercivity and remanence is connected to an oxide-to-metal transformation, reducing domain wall pinning. For intermediate compositions, the magneto-ionic effects are largest. Here, the potential induces a moderate increase, followed by a drastic reversible decrease in coercivity by ∼ −90%. This behavior is attributed to the enhanced electrochemical reactivity of ultrafine grains and the heterogeneous oxide present on mixed bcc/fcc Fe-Ni films. For Ni-rich films, the magneto-ionic effects are small, but voltage-induced magnetic softening is still achieved. The study introduces Fe-Ni films as a promising magneto-ionic material platform and highlights the potential of tailored, defect-rich microstructures for boosting magneto-ionic performance.

The rapid advancement of wireless communication technologies, from 5G to 6G, has necessitated significant improvements in materials used for electronic packaging. Glass-ceramics have long been promising candidates due to their unique combination of low dielectric loss, high thermal stability, and excellent mechanical properties. This review explores the potential compositional systems of glass-ceramics in electronic packaging substrates, emphasizing their performance in high-frequency applications. An analysis of their fabrication techniques and material properties is discussed. Comparisons with traditional polymer and ceramic substrates highlight the advantages of glass-ceramics, including enhanced signal integrity and thermal management. Challenges in processing and material optimization, as well as emerging trends such as glass-polymer composites and advanced manufacturing techniques, are discussed. This review provides a forward-looking perspective on the role of glass-ceramics in enabling the next generation of electronic devices.

Wave-based platforms for unconventional computing require a controlled yet adjustable flow of wave information, integrated with non-volatile data storage. Spin waves are ideal for such platforms due to their inherent nonreciprocal properties and direct interaction with magnetic storage. This study demonstrates how spin-wave nonreciprocity, induced by dipolar interactions in nanowaveguides with antiparallel out-of-plane magnetization, enables the realization of a spin-wave circulator for unidirectional signal transport and advanced routing. The device's functionality can be continuously reconfigured using a magnetic domain wall with adjustable position, offering non-volatile control over output and nonreciprocity. These features are illustrated using a spin-wave directional coupler, validated through micromagnetic simulations and analytical models, which also support the functions of a waveguide crossing, tunable power splitter, and frequency multiplexer. The proposed domain-wall-based reconfiguration, combined with nonlinear spin-wave behavior, holds promise for developing a nanoscale, nonlinear wave computing platform with self-learning capabilities.

Based on first-principles calculations and symmetry analysis, we report a magnetization-orientation-controlled topological phase transition and anomalous transport effects in hexagonal MnSb. Owing to its remarkably low magnetic anisotropy energy (0.465 meV), the magnetization direction in MnSb can be readily manipulated by external perturbations. Without spin-orbit coupling (SOC), a symmetry-protected Dirac point (DP) lies 9 meV below the Fermi level. Upon inclusion of SOC, this DP undergoes an evolution as a function of magnetization orientation: it opens a gap at θ = 0° (magnetization along the a-axis) due to the symmetry breaking, and transforms into four Weyl points at θ = 90° (magnetization along the c-axis). These topological transitions are accompanied by significant Berry curvature reconstruction, which profoundly influences the anomalous transport responses. Specifically, the anomalous Hall conductivity increases monotonically from –100.64 Ω⁻¹cm⁻¹ at θ = 0° to a maximum of –754.72 Ω⁻¹cm⁻¹ at θ = 90°, whereas the anomalous Nernst coefficient undergoes a sign reversal, changing from +0.50 Am⁻¹K⁻¹ to –0.09 Am⁻¹K⁻¹ as the magnetization rotates. Our work establishes a design principle for engineering magnetic topological materials, with MnSb serving as a representative example to explore the interplay between magnetic order and topology-driven transport phenomena. These findings bridge magnetism, topology, and transport physics, opening a pathway toward novel spintronic devices through tunable magnetization direction.

As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units. This review presents the recent advances in both stateful and non-stateful logic techniques for PIM, focusing on emerging nonvolatile memory technologies such as resistive random-access memory (RRAM), phase-change memory (PCM), and magnetoresistive random-access memory (MRAM). Both experimentally demonstrated and simulated logic designs are critically examined, highlighting key challenges in reliability and the role of device-level optimization in enabling scalable and commercial viable PIM systems. The review begins with an overview of relevant logic families, memristive device types, and associated reliability metrics. Each logic family is then explored in terms of how it capitalizes on distinct device properties to implement logic techniques. A comparative table of representative device stacks and performance parameters illustrates trade-offs and quality indicators. Through this comprehensive analysis, the development of optimized, robust memristive devices for next-generation PIM applications is supported.

Electrowetting displays (EWDs) are a new generation of electronic paper displays, featuring low power consumption and a wide viewing angle. Owing to their alignment with green environmental protection and energy conservation concepts, the EWDs exhibit vast market potential. However, current EWDs face challenges such as high driving voltages, ink backflow, response speed and aperture ratio which need further improvement. Hence, this paper describes for the first time the preparation of hexagonal-pixel EWDs based on the principle of 2D dense tiling and microfluidics theory at the corner. Compared with square-pixel EWDs, the hexagonal-pixel EWDs reduced the threshold voltage by 42.67% and the voltage required to maintain the maximum aperture ratio by 13.94%, while keeping the maximum aperture ratio unchanged. Moreover, based on ink motion theory in EWDs, a hybrid driving waveform combining exponential and alternating current (AC) is proposed for the prepared hexagonal-pixel EWDs. Compared with traditional direct current (DC) and pulse width modulation (PWM) driving waveforms, this driving waveform reduced the brightness fluctuations from 22.374 and 20.726 to 3.110 in the ink driving stage, and from 4.211 and 25.316 to 1.827 in the stable display stage, respectively.

Suspended indium arsenide (InAs) nanowires offer a unique platform for studying surface-driven transport phenomena due to their high surface-to-volume ratio and the absence of dielectric interfaces. In this work, we investigate the role of surface states in InAs nanowire field-effect transistors. Electrical characterization reveals a high electron mobility of ≈1500 cm²V⁻¹s⁻¹, alongside a subthreshold swing of 1.49 V dec⁻¹, indicating a reduced gate efficiency caused by surface traps. Temperature-dependent analysis yields activation energies of ∼100 meV, confirming the dominant influence of shallow trap states on both threshold voltage and subthreshold slope. Under pulsed optical excitation, the devices exhibit persistent negative photoconductivity and gate-tunable hysteresis. The on/off current ratio exceeds 10⁵ at 200 K. These effects are attributed to a photogating mechanism controlled by the interplay between gate voltage and photoinduced trap occupation. The demonstrated ability to modulate long and short-term memory behavior through optical and electrical stimuli highlights the potential of these nanowire devices for neuromorphic applications.

Magnetoelectric materials are one of the potential candidates that can counter the growing need of low-power memory and spintronic devices due to their ability to electrically control magnetic states. Manipulation of a magnetic state with the sole use of an electric field has faced several challenges like volatility and non-reproducibility. Here, we propose a magnetostrictive FeGa thin film interfaced with a relaxor ferroelectric substrate (PMN-PT) having a [011] surface cut. The polarization rotation is controlled near the coercive electric fields and stabilized at remanence, which generates distinct strained states. This strain transfers to the FeGa layer mechanically, inducing a net rotation of magnetization without the need of any bias magnetic field applicators. Imaging of the magnetic domains reveals spatial and real-time information about its variation and adds insight on the modification of magnetic anisotropy. The newly created magnetic information can be erased by reaching ferroelectric saturation and subsequently regenerated through specific electrical pulses. These results demonstrate the possibility of manipulating the magnetization via controlled polarization rotation, for use in strain-driven magneto-electronics.

Anthracene based fluorescent host materials continue to play a pivotal role in advancing device efficiency and lifetime. Especially when synergized with state-of-the-art narrowband fluorescent emitters. In this context, we developed two anthracene naphthobenzofuran-based host materials, NBFPAn and NBFNAn, through rational molecular engineering. Their planar yet sterically optimized structures effectively suppress intermolecular π–π stacking, minimizing excimer formation, and facilitating efficient singlet energy transfer to the dopant. The doped host films with multi-resonance TADF emitter m-t-DABNA, the host films exhibit PLQYs of 84.2% (NBFPAn) and 93.9% (NBFNAn), along with high horizontal transition dipole orientations (Θ) of 83.8% and 88.2%, respectively. Additionally, both hosts exhibit excellent thermal and morphological stability, with decomposition temperatures (T_d) above 355°C and 381°C for NBFPAn and NBFNAn respectively, supporting reliable vacuum deposition. Devices employing these hosts achieve deep blue emission of λ_em 463 nm, with EQE_max of 10.5% and 8.56% for NBFPAn and NBFNAn, respectively. Notably, the NBFPAn based device exhibits an extended lifetime (LT₉₀) of 45 h at 1000 cd m⁻². This work underscores the critical role of molecular engineering toward simultaneously enhancing device efficiency and operational lifetime through optimizing exciton dynamics, charge transports for next-generation high-performance blue OLEDs.

The non-uniform current distribution arising from either the current crowding effect or the hot spot effect provides a method to tailor the interaction between thermal gradient and electron transport in magnetically ordered systems. Here, we apply the device structural engineering to realize an in-plane inhomogeneous‌ temperature distribution within the conduction channel, and the resulting geometric anomalous Nernst effect (GANE) gives rise to a nonlinear effect whose polarity corresponds to the out-of-plane magnetization of Co/Pt multi-layer thin film, and its resistance is linearly proportional to the applied current. By optimizing the aspect ratio of a convex-shaped device, the effective temperature gradient can reach up to 0.3 K µm⁻¹ along the y-direction, leading to a GANE signal of 28.3 µV. Moreover, we demonstrate electrical write and read operations in the perpendicularly magnetized Co/Pt-based spin–orbit torque device with a simple two-terminal structure. Our results unveil a new pathway to utilize thermoelectric effects for constructing high-density magnetic memories.