In‐Al‐Sn‐O (IATO) is a very promising novel amorphous oxide as the active layer of thin film transistors (TFTs). Herein, IATO TFTs are first fabricated with the effects of annealing on IATO films and TFTs being studied. The IATO films possessed amorphous structure, flat surface morphology, high visible light transmittance, and wide optical bandgap ≈4.20 eV before and after annealing even at 400 °C. The minimal surface roughness and internal defects are obtained for the 300 °C annealed IATO film. Correspondingly, the 300 °C annealed TFTs demonstrated the best overall performance including high saturation mobility (8.55 ± 0.62 cm2 V−1 s−1), low subthreshold swing (0.40 ± 0.07 V dec−1), ideal on/off current ratio (1.25 ± 0.09 × 108), and negligible hysteresis (0.23 ± 0.03 V) values. The 300 °C annealed TFTs are then applied in optoelectronic artificial synapses and exhibit typical synaptic properties, including excitatory postsynaptic current, paired‐pulse facilitation, and short‐term plasticity to long‐term plasticity conversion in response to light stimulation. The international Morse code and repetitive learning‐forgetting behavior of the human brain are also successfully simulated. In particular, an emotion‐memory efficiency model is proposed and the emotion effect on human memory efficiency is successfully imitated via the regulation of gate voltage.
In-Al-Sn-O (IATO) 是一种非常有前途的新型非晶氧化物，可用作薄膜晶体管 (TFT) 的有源层。本文首先制作了 IATO TFT，并研究了退火对 IATO 薄膜和 TFT 的影响。IATO 薄膜在 400 °C 退火前后均具有非晶结构、平坦的表面形貌、高可见光透过率和宽光带隙 ≈4.20 eV。300 °C 退火的 IATO 薄膜表面粗糙度和内部缺陷最小。相应地，经 300 °C 退火处理的 TFT 显示出最佳的整体性能，包括高饱和迁移率（8.55 ± 0.62 cm2 V-1 s-1）、低亚阈值摆动（0.40 ± 0.07 V dec-1）、理想的开/关电流比（1.25 ± 0.09 × 108）和可忽略的滞后（0.23 ± 0.03 V）值。300 °C 退火后的 TFT 被应用于光电人工突触，并表现出典型的突触特性，包括兴奋性突触后电流、成对脉冲促进以及光刺激下的短期可塑性到长期可塑性转换。国际摩尔斯电码和人脑的重复学习遗忘行为也被成功模拟。特别是提出了情绪-记忆效率模型，并通过调节栅极电压成功模拟了情绪对人类记忆效率的影响。
{"title":"Amorphous In–Al–Sn–O Thin Film Transistors and Their Application in Optoelectronic Artificial Synapses","authors":"Xiao Feng, Yu Zhang, Xinming Zhuang, Xianjin Feng","doi":"10.1002/aelm.202400457","DOIUrl":"https://doi.org/10.1002/aelm.202400457","url":null,"abstract":"In‐Al‐Sn‐O (IATO) is a very promising novel amorphous oxide as the active layer of thin film transistors (TFTs). Herein, IATO TFTs are first fabricated with the effects of annealing on IATO films and TFTs being studied. The IATO films possessed amorphous structure, flat surface morphology, high visible light transmittance, and wide optical bandgap ≈4.20 eV before and after annealing even at 400 °C. The minimal surface roughness and internal defects are obtained for the 300 °C annealed IATO film. Correspondingly, the 300 °C annealed TFTs demonstrated the best overall performance including high saturation mobility (8.55 ± 0.62 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>), low subthreshold swing (0.40 ± 0.07 V dec<jats:sup>−1</jats:sup>), ideal on/off current ratio (1.25 ± 0.09 × 10<jats:sup>8</jats:sup>), and negligible hysteresis (0.23 ± 0.03 V) values. The 300 °C annealed TFTs are then applied in optoelectronic artificial synapses and exhibit typical synaptic properties, including excitatory postsynaptic current, paired‐pulse facilitation, and short‐term plasticity to long‐term plasticity conversion in response to light stimulation. The international Morse code and repetitive learning‐forgetting behavior of the human brain are also successfully simulated. In particular, an emotion‐memory efficiency model is proposed and the emotion effect on human memory efficiency is successfully imitated via the regulation of gate voltage.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"123 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142415709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sena Ermis, Sinem Altinisik, Fahri Catoglu, Yusuf Yagci, Erdem Sari, Steffen Jockusch, Sermet Koyuncu, Kerem Kaya
Due to the increasing global demand for electrical energy, the fabrication of advanced energy storage devices, such as supercapacitors (SCs), with outstanding performance is of paramount importance. Herein, the facile light-induced synthesis of a conjugated conductive polymer, namely, poly(guaiazulene) (PGz) is reported on, using a naturally available, low-cost monomer, guaiazulene (Gz). PGz and PGz_rGO (obtained by combining PGz with reduced graphene oxide (rGO)) exhibited high-performance supercapacitor (SC) electrode properties, including remarkable specific capacitance (52.75 F g−1 at 0.24 A g−1 and 258.6 F g−1 at 5.00 A g−1, respectively), excellent cycling stability (97.1% and 94.0% stability after 5000 cycles), high power density (95.5 and 2118.8 W kg−1), and, most importantly, high energy density (5.81 and 30.57 Wh kg−1). These superior features are attributed to the hierarchical porous nature and high electrical/ionic conductivities of the photochemically obtained PGz. Contrary to previous techniques that require harsh reaction conditions, such as carbonization and coupling reactions, the reported photopolymerization involves solely the irradiation of an ethyl acetate solution of a Gz-organic photoinitiator (2-bromoacetophenone) mixture. The photochemical synthesis described here provides a powerful method to produce a sustainable and high-performance SC electrode material, offering a great alternative to commercial SCs.
由于全球对电能的需求日益增长，制造性能卓越的先进储能设备（如超级电容器）至关重要。本文报告了利用一种天然、低成本的单体--愈创木酚（Gz），在光诱导下轻松合成共轭导电聚合物--聚（愈创木酚）（PGz）的过程。PGz 和 PGz_rGO（通过将 PGz 与还原氧化石墨烯 (rGO) 结合获得）表现出高性能的超级电容器 (SC) 电极特性，包括显著的比电容（0.24 A g-1 时为 52.75 F g-1 和 5.00 A g-1 时为 258.6 F g-1 at 5.00 A g-1）、优异的循环稳定性（5000 次循环后的稳定性分别为 97.1% 和 94.0%）、高功率密度（95.5 W kg-1 和 2118.8 W kg-1），以及最重要的高能量密度（5.81 Wh kg-1 和 30.57 Wh kg-1）。这些优异特性归功于光化学方法获得的 PGz 的分层多孔性和高导电性/离子导电性。与以往需要苛刻反应条件（如碳化和偶联反应）的技术不同，所报道的光聚合反应仅涉及对 Gz 有机光引发剂（2-溴苯乙酮）混合物的乙酸乙酯溶液进行辐照。本文所描述的光化学合成为生产可持续的高性能 SC 电极材料提供了一种强有力的方法，为商业 SC 提供了一种很好的替代品。
{"title":"From Plant Oils to High-Performance Supercapacitor Electrode: Poly(guaiazulene) via Photopolymerization","authors":"Sena Ermis, Sinem Altinisik, Fahri Catoglu, Yusuf Yagci, Erdem Sari, Steffen Jockusch, Sermet Koyuncu, Kerem Kaya","doi":"10.1002/aelm.202400570","DOIUrl":"https://doi.org/10.1002/aelm.202400570","url":null,"abstract":"Due to the increasing global demand for electrical energy, the fabrication of advanced energy storage devices, such as supercapacitors (SCs), with outstanding performance is of paramount importance. Herein, the facile light-induced synthesis of a conjugated conductive polymer, namely, poly(guaiazulene) (PGz) is reported on, using a naturally available, low-cost monomer, guaiazulene (Gz). PGz and PGz_rGO (obtained by combining PGz with reduced graphene oxide (rGO)) exhibited high-performance supercapacitor (SC) electrode properties, including remarkable specific capacitance (52.75 F g<sup>−1</sup> at 0.24 A g<sup>−1</sup> and 258.6 F g<sup>−1</sup> at 5.00 A g<sup>−1</sup>, respectively), excellent cycling stability (97.1% and 94.0% stability after 5000 cycles), high power density (95.5 and 2118.8 W kg<sup>−1</sup>), and, most importantly, high energy density (5.81 and 30.57 Wh kg<sup>−1</sup>). These superior features are attributed to the hierarchical porous nature and high electrical/ionic conductivities of the photochemically obtained PGz. Contrary to previous techniques that require harsh reaction conditions, such as carbonization and coupling reactions, the reported photopolymerization involves solely the irradiation of an ethyl acetate solution of a Gz-organic photoinitiator (2-bromoacetophenone) mixture. The photochemical synthesis described here provides a powerful method to produce a sustainable and high-performance SC electrode material, offering a great alternative to commercial SCs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142405565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2D 1T-VSe2 is a charge-density wave (CDW) system that also exhibits room-temperature ferromagnetism, making it promising for photodetecting devices. However, the sensitivity of 1T-VSe2 photodetectors is limited by the high dark current due to its metallic feature of T-phase VSe2. So far, photodetectors based on semiconducting 2H-phase VSe2 have ever been reported. In this work, the metal-semiconductor phase transition (1T to 2H) in multilayer VSe2 by thermal annealing process, and the fabrication of 2H-VSe2 broadband photodetectors with high sensitivity is reported. The 2H-VSe2 photodetectors exhibit low dark current and a broad spectral range of 405–1550 nm. The responsivity (R) and detectivity (D*) can reach up to 75.26 A W−1 and 1.45 × 1010 Jones at Vsd of 1 V, outperforming photodetectors based on 1T-VSe2 and other 2D materials for the 1550 nm optical communication band. This work showcases a facile method for obtaining the metal-semiconductor phase transition of VSe2 and demonstrates the potential of 2H-VSe2 for high-performance near-infrared photodetectors.
{"title":"Metal-Semiconductor Phase Transition in Multilayer VSe2 for Broadband Photodetector with High Sensitivity","authors":"Yujue Yang, Mengjia Xia, Qixiao Zhao, Zhidong Pan, Huafeng Dong, Xin Zhang, Fugen Wu, Juehan Yang, Nengjie Huo","doi":"10.1002/aelm.202400682","DOIUrl":"https://doi.org/10.1002/aelm.202400682","url":null,"abstract":"2D 1T-VSe<sub>2</sub> is a charge-density wave (CDW) system that also exhibits room-temperature ferromagnetism, making it promising for photodetecting devices. However, the sensitivity of 1T-VSe<sub>2</sub> photodetectors is limited by the high dark current due to its metallic feature of T-phase VSe<sub>2</sub>. So far, photodetectors based on semiconducting 2H-phase VSe<sub>2</sub> have ever been reported. In this work, the metal-semiconductor phase transition (1T to 2H) in multilayer VSe<sub>2</sub> by thermal annealing process, and the fabrication of 2H-VSe<sub>2</sub> broadband photodetectors with high sensitivity is reported. The 2H-VSe<sub>2</sub> photodetectors exhibit low dark current and a broad spectral range of 405–1550 nm. The responsivity (R) and detectivity (D*) can reach up to 75.26 A W<sup>−1</sup> and 1.45 × 10<sup>10</sup> Jones at <i>V</i><sub>sd</sub> of 1 V, outperforming photodetectors based on 1T-VSe<sub>2</sub> and other 2D materials for the 1550 nm optical communication band. This work showcases a facile method for obtaining the metal-semiconductor phase transition of VSe<sub>2</sub> and demonstrates the potential of 2H-VSe<sub>2</sub> for high-performance near-infrared photodetectors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"78 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142405593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mila Lewerenz, Elias Passerini, Luca Weber, Markus Fischer, Nadia Jimenez Olalla, Raphael Gisler, Alexandros Emboras, Mathieu Luisier, Miklos Csontos, Ueli Koch, Juerg Leuthold
The human brain facilitates information processing via generating and receiving temporal patterns of short voltage pulses, a.k.a. neural spikes. This approach simultaneously grants low-power operation as well as a high degree of noise immunity and fault tolerance at a small footprint and simplistic structure of the neurons. To date, the latter two key features are critically missing from the toolbox of artificial spiking neural network hardware, hindering the development of scalable and sustainable artificial intelligence (AI) platforms. Here, a compact, gate-tunable neuron circuit is demonstrated, and its potential as a functional leaky integrate-and-fire (LIF) neuron is explored. It relies on a single nanoscale three-terminal (3T) memristor device, which has been downscaled by 30% compared to previous work, where the set voltage and, thereby, the spiking probability of the neuron circuit can be widely tuned by the low-voltage operation of the gate electrode. The influence of the gate voltage on the two-terminal (2T) current–voltage characteristics is measured, statistically analyzed, and further utilized in a custom-built LTspice model. The circuit simulations account for the experimentally observed, adjustable set voltage. The presented results demonstrate the merits of 3T memristors as compact, tunable, and versatile artificial neurons for neuromorphic computing applications.
{"title":"A Three-Terminal Memristive Artificial Neuron with Tunable Firing Probability","authors":"Mila Lewerenz, Elias Passerini, Luca Weber, Markus Fischer, Nadia Jimenez Olalla, Raphael Gisler, Alexandros Emboras, Mathieu Luisier, Miklos Csontos, Ueli Koch, Juerg Leuthold","doi":"10.1002/aelm.202400432","DOIUrl":"https://doi.org/10.1002/aelm.202400432","url":null,"abstract":"The human brain facilitates information processing via generating and receiving temporal patterns of short voltage pulses, a.k.a. neural spikes. This approach simultaneously grants low-power operation as well as a high degree of noise immunity and fault tolerance at a small footprint and simplistic structure of the neurons. To date, the latter two key features are critically missing from the toolbox of artificial spiking neural network hardware, hindering the development of scalable and sustainable artificial intelligence (AI) platforms. Here, a compact, gate-tunable neuron circuit is demonstrated, and its potential as a functional leaky integrate-and-fire (LIF) neuron is explored. It relies on a single nanoscale three-terminal (3T) memristor device, which has been downscaled by 30% compared to previous work, where the set voltage and, thereby, the spiking probability of the neuron circuit can be widely tuned by the low-voltage operation of the gate electrode. The influence of the gate voltage on the two-terminal (2T) current–voltage characteristics is measured, statistically analyzed, and further utilized in a custom-built LTspice model. The circuit simulations account for the experimentally observed, adjustable set voltage. The presented results demonstrate the merits of 3T memristors as compact, tunable, and versatile artificial neurons for neuromorphic computing applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"59 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142398388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current density curves for the [100], [110], and [111] crystallographic directions of photoexcited, nominally pure, bulk SrTiO3 are studied, revealing a strong anisotropy between these crystallographic directions. In the [110] direction two distinct peaks in the current-voltage characteristics with two different negative differential conductivity regions are distinguishable. The two regions can be explained with two different mechanisms, one based on field-enhanced trapping and the second the transferred electron effect based on two-valley conduction band interacting with a trap. Photoluminescence spectra revealed Cr impurities to be the potential origin of the current density anisotropy. In the high temperatures range and low photon fluxes the photoconductivity follows a classical Hecht model with a mu-tau (μτ) value up to 10−4 cm2V−1.
{"title":"Non-linear Photoexcited Negative Differential Conductivity in Bulk SrTiO3 Single Crystals","authors":"Alexander Connor Newing, Marin Alexe","doi":"10.1002/aelm.202400285","DOIUrl":"https://doi.org/10.1002/aelm.202400285","url":null,"abstract":"Current density curves for the [100], [110], and [111] crystallographic directions of photoexcited, nominally pure, bulk SrTiO<sub>3</sub> are studied, revealing a strong anisotropy between these crystallographic directions. In the [110] direction two distinct peaks in the current-voltage characteristics with two different negative differential conductivity regions are distinguishable. The two regions can be explained with two different mechanisms, one based on field-enhanced trapping and the second the transferred electron effect based on two-valley conduction band interacting with a trap. Photoluminescence spectra revealed Cr impurities to be the potential origin of the current density anisotropy. In the high temperatures range and low photon fluxes the photoconductivity follows a classical Hecht model with a mu-tau (μτ) value up to 10<sup>−4</sup> cm<sup>2</sup> <i>V</i><sup>−1</sup>.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"32 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142397965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Miguel Franco, Asal Kiazadeh, Rodrigo Martins, Senentxu Lanceros-Méndez, Emanuel Carlos
Printed Memristors
As the world shifts towards Industry 4.0, the growth of connected devices is accelerating, resulting in increased data generation. Miniaturization and power consumption challenges require efficient computation, with memristor being the next technological leap. Printed electronics have opened new avenues for low-temperature, low-cost processes for material processing and manufacturing. The review by Asal Kiazadeh, Senentxu Lanceros-Méndez, Emanuel Carlos, and co-workers (see article number 2400212) offers an insight into printed electronics' potential for the creation of sustainable memristive devices, a significant new field that has seen impressive advancements in novel neuromorphic paradigms.
印刷忆阻器随着全球向工业 4.0 转型，互联设备正在加速增长，从而导致数据生成量增加。微型化和功耗方面的挑战要求高效计算，而忆阻器则是下一个技术飞跃。印刷电子为低温、低成本的材料加工和制造工艺开辟了新途径。Asal Kiazadeh、Senentxu Lanceros-Méndez、Emanuel Carlos 及合作者的综述（见文章编号 2400212）深入探讨了印刷电子在制造可持续忆阻器方面的潜力，这是一个重要的新领域，在新型神经形态范例方面取得了令人瞩目的进展。
{"title":"Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applications (Adv. Electron. Mater. 10/2024)","authors":"Miguel Franco, Asal Kiazadeh, Rodrigo Martins, Senentxu Lanceros-Méndez, Emanuel Carlos","doi":"10.1002/aelm.202470032","DOIUrl":"https://doi.org/10.1002/aelm.202470032","url":null,"abstract":"<p><b>Printed Memristors</b></p><p>As the world shifts towards Industry 4.0, the growth of connected devices is accelerating, resulting in increased data generation. Miniaturization and power consumption challenges require efficient computation, with memristor being the next technological leap. Printed electronics have opened new avenues for low-temperature, low-cost processes for material processing and manufacturing. The review by Asal Kiazadeh, Senentxu Lanceros-Méndez, Emanuel Carlos, and co-workers (see article number 2400212) offers an insight into printed electronics' potential for the creation of sustainable memristive devices, a significant new field that has seen impressive advancements in novel neuromorphic paradigms.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470032","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142404608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Saransh Shrivastava, Wei-Sin Dai, Stephen Ekaputra Limantoro, Hans Juliano, Tseung-Yuen Tseng
Due to the imitation of the neural functionalities of the human brain via optical modulation of resistance states, photoelectric resistive random access memory (ReRAM) devices attract extensive attraction for synaptic electronics and in-memory computing applications. In this work, a photoelectric synaptic ReRAM (PSR) of the structure of ITO/Zn2SnO4/Ga2O3/ITO/glass with a simple fabrication process is reported to imitate brain plasticity. Electrically induced long-term potentiation/depression (LTP/D) behavior indicates the fulfillment of the fundamental requirement of artificial neuron devices. Classification of three-channeled images corrupted with different levels (0.15–0.9) of Gaussian noise is achieved by simulating a convolutional neural network (CNN). The violet light (405 nm) illumination generates excitatory post synaptic current (EPSC), which is influenced by the persistent photoconductivity (PPC) effect after discontinuing the optical excitation. As an artificial neuron device, PSR is able to imitate some basic neural functions such as multi-levels of photoelectric memory with linearly increasing trend, and learning-forgetting-relearning behavior. The same device also shows the emulation of visual persistency of optic nerve and skin-damage warning. This device executes high-pass filtering function and demonstrates its potential in the image-sharpening process. These findings provide an avenue to develop oxide semiconductor-based multifunctional synaptic devices for advanced in-memory photoelectric systems.
{"title":"A Violet-Light-Responsive ReRAM Based on Zn2SnO4/Ga2O3 Heterojunction as an Artificial Synapse for Visual Sensory and In-Memory Computing","authors":"Saransh Shrivastava, Wei-Sin Dai, Stephen Ekaputra Limantoro, Hans Juliano, Tseung-Yuen Tseng","doi":"10.1002/aelm.202400527","DOIUrl":"https://doi.org/10.1002/aelm.202400527","url":null,"abstract":"Due to the imitation of the neural functionalities of the human brain via optical modulation of resistance states, photoelectric resistive random access memory (ReRAM) devices attract extensive attraction for synaptic electronics and in-memory computing applications. In this work, a photoelectric synaptic ReRAM (PSR) of the structure of ITO/Zn<sub>2</sub>SnO<sub>4</sub>/Ga<sub>2</sub>O<sub>3</sub>/ITO/glass with a simple fabrication process is reported to imitate brain plasticity. Electrically induced long-term potentiation/depression (LTP/D) behavior indicates the fulfillment of the fundamental requirement of artificial neuron devices. Classification of three-channeled images corrupted with different levels (0.15–0.9) of Gaussian noise is achieved by simulating a convolutional neural network (CNN). The violet light (405 nm) illumination generates excitatory post synaptic current (EPSC), which is influenced by the persistent photoconductivity (PPC) effect after discontinuing the optical excitation. As an artificial neuron device, PSR is able to imitate some basic neural functions such as multi-levels of photoelectric memory with linearly increasing trend, and learning-forgetting-relearning behavior. The same device also shows the emulation of visual persistency of optic nerve and skin-damage warning. This device executes high-pass filtering function and demonstrates its potential in the image-sharpening process. These findings provide an avenue to develop oxide semiconductor-based multifunctional synaptic devices for advanced in-memory photoelectric systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142386007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In article number 2300709, Hirofumi Tanaka and co-workers demonstrate a nanoparticle-based atomic switch network memristive device, highlighting its capability for both volatile and nonvolatile switching operations. The device exhibits high stability over 100 cycles, with switching characteristics determined by compliance current. This study also emphasizes the critical role of electrode spacing in operational mode transitions, significantly advancing the integration of neuron and synapse functionalities within neuromorphic systems.
基于纳米粒子的原子开关网络
{"title":"Volatile and Nonvolatile Dual-Mode Switching Operations in an Ag-Ag2S Core-Shell Nanoparticle Atomic Switch Network (Adv. Electron. Mater. 10/2024)","authors":"Oradee Srikimkaew, Saverio Ricci, Matteo Porzani, Thien Tan Dang, Yusuke Nakaoka, Yuki Usami, Daniele Ielmini, Hirofumi Tanaka","doi":"10.1002/aelm.202470033","DOIUrl":"10.1002/aelm.202470033","url":null,"abstract":"<p><b>Nanoparticle-Based Atomic Switch Network</b></p><p>In article number 2300709, Hirofumi Tanaka and co-workers demonstrate a nanoparticle-based atomic switch network memristive device, highlighting its capability for both volatile and nonvolatile switching operations. The device exhibits high stability over 100 cycles, with switching characteristics determined by compliance current. This study also emphasizes the critical role of electrode spacing in operational mode transitions, significantly advancing the integration of neuron and synapse functionalities within neuromorphic systems.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 10","pages":""},"PeriodicalIF":5.3,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470033","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142398328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carlos Sebastián-Vicente, Riccardo Zamboni, Angel García-Cabañes, Mercedes Carrascosa
Photovoltaic Fe:LiNbO3 is an outstanding material platform able to photo-generate versatile charge patterns, useful for a broad variety of applications. However, in some cases, its photorefractive effect, light absorption, and active ferroelectric properties may interfere with the optimum operation of certain devices based on Fe:LiNbO3. Here, a novel optoelectronic method is proposed and demonstrated to transfer photovoltaic charge patterns from Fe:LiNbO3 to non-photovoltaic passive substrates, thus removing these possible limitations. The method, denominated as photovoltaic charge lithography (PVCL), resembles the operation of a stamp and does not require external high-voltage supplies or electron/ion beams. Upon contact between the active Fe:LiNbO3 stamp and a passive dielectric substrate, the light-induced charge pattern can be faithfully mirrored on the passive substrate. The imprinted pattern is probed and characterized by dielectrophoretic and electrophoretic particle trapping. The results reveal that the charge builds up on the passive substrate during contact, allowing charge tunability. Moreover, arbitrary charge distributions can be flexibly tailored, using scanning laser beams or spatially structured light. Overall, PVCL opens the possibility of printing complex 1D/2D charge patterns of controlled polarity on different passive dielectric materials, enhancing the technological potential of Fe:LiNbO3 photovoltaic platforms.
{"title":"Photovoltaic Charge Lithography on Passive Dielectric Substrates Using Fe:LiNbO3 Stamps","authors":"Carlos Sebastián-Vicente, Riccardo Zamboni, Angel García-Cabañes, Mercedes Carrascosa","doi":"10.1002/aelm.202400327","DOIUrl":"https://doi.org/10.1002/aelm.202400327","url":null,"abstract":"Photovoltaic Fe:LiNbO<sub>3</sub> is an outstanding material platform able to photo-generate versatile charge patterns, useful for a broad variety of applications. However, in some cases, its photorefractive effect, light absorption, and active ferroelectric properties may interfere with the optimum operation of certain devices based on Fe:LiNbO<sub>3</sub>. Here, a novel optoelectronic method is proposed and demonstrated to transfer photovoltaic charge patterns from Fe:LiNbO<sub>3</sub> to non-photovoltaic passive substrates, thus removing these possible limitations. The method, denominated as photovoltaic charge lithography (PVCL), resembles the operation of a stamp and does not require external high-voltage supplies or electron/ion beams. Upon contact between the active Fe:LiNbO<sub>3</sub> stamp and a passive dielectric substrate, the light-induced charge pattern can be faithfully mirrored on the passive substrate. The imprinted pattern is probed and characterized by dielectrophoretic and electrophoretic particle trapping. The results reveal that the charge builds up on the passive substrate during contact, allowing charge tunability. Moreover, arbitrary charge distributions can be flexibly tailored, using scanning laser beams or spatially structured light. Overall, PVCL opens the possibility of printing complex 1D/2D charge patterns of controlled polarity on different passive dielectric materials, enhancing the technological potential of Fe:LiNbO<sub>3</sub> photovoltaic platforms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"70 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142384823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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