Douglas Henrique Vieira, Gabriel Leonardo Nogueira, Leandro Merces, Carlos César Bof Bufon, Neri Alves
Oxide-Based Electrolyte-Gated Transistors
ZnO-based transistors have been fabricated using an innovative configuration that combines vertical architecture with electrolyte usage (see article number 2300562 by Douglas Henrique Vieira, Neri Alves, and co-workers). The diode counterpart unveils a current–voltage relationship arising from space-charge limited current, which undergoes continuous shift due to the field-effect promoted by the charge accumulation in the source's perforation, driven by its capacitor counterpart. Beyond the transport mechanism, the findings showcase excellence in current switching based on irradiance – a phenomenon analogous to the field-effect.
基于氧化物的电解质门控晶体管ZnO 基晶体管的制造采用了一种创新配置，将垂直结构与电解质的使用相结合（参见 Douglas Henrique Vieira、Neri Alves 及合作者的 2300562 号文章）。二极管的对应物揭示了空间电荷限制电流所产生的电流-电压关系，这种关系在电容器对应物的驱动下，由于源穿孔中电荷积累所产生的场效应而不断发生变化。除了传输机制之外，研究结果还展示了基于辐照度的电流开关的卓越性能--这是一种类似于场效应的现象。
{"title":"Electrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching (Adv. Electron. Mater. 6/2024)","authors":"Douglas Henrique Vieira, Gabriel Leonardo Nogueira, Leandro Merces, Carlos César Bof Bufon, Neri Alves","doi":"10.1002/aelm.202470021","DOIUrl":"https://doi.org/10.1002/aelm.202470021","url":null,"abstract":"<p><b>Oxide-Based Electrolyte-Gated Transistors</b></p><p>ZnO-based transistors have been fabricated using an innovative configuration that combines vertical architecture with electrolyte usage (see article number 2300562 by Douglas Henrique Vieira, Neri Alves, and co-workers). The diode counterpart unveils a current–voltage relationship arising from space-charge limited current, which undergoes continuous shift due to the field-effect promoted by the charge accumulation in the source's perforation, driven by its capacitor counterpart. Beyond the transport mechanism, the findings showcase excellence in current switching based on irradiance – a phenomenon analogous to the field-effect.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470021","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141298808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sung-Uk Yoon, Yun Hwangbo, Bongkyun Jang, Hyeon-Don Kim, Jae-Hyun Kim
Transparent displays are crucial for various applications, particularly for their potential use as windows in future self-driving cars. These displays require high transparency, low power consumption, and high mechanical reliability. Micro-LEDs have emerged as ideal devices for the transparent displays. Efficient mass-production processes are essential for the commercialization of transparent micro-LED displays. This study presents roll-based mass transfer to enhance the productivity of transparent micro-LED displays. Roll transfer processes traditionally face resolution challenges in alignment repeatability and positional errors in both the transverse direction (TD) and machine direction (MD). This study proposes a roll-to-plate (R2P) transfer process with overlay alignment to improve the repeatability precision of the alignment. Detailed experimental analyses address positional errors in the TD and MD, attributed to initial contact errors and linear velocity asynchrony, respectively. The results demonstrate successful micro-LED transfer onto a transparent circuit board (TCB) with a maximum positional error of 3.2 µm and a 99.75% yield. The resulting micro-LED display achieves a transparency of 72.5% with 68 pixels per inch. This study overcomes the alignment challenges in the R2P process and contributes to the commercialization of transparent micro-LED displays. It is expected to positively impact the manufacturing of transparent applications that involve rolling processes.
透明显示屏对各种应用都至关重要，尤其是在未来的自动驾驶汽车中可能用作车窗。这些显示器要求高透明度、低功耗和高机械可靠性。微型 LED 已成为透明显示器的理想器件。高效的大规模生产工艺对于透明微型 LED 显示屏的商业化至关重要。本研究提出了基于轧辊的大规模转移工艺，以提高透明微型 LED 显示屏的生产率。传统的辊传工艺在横向（TD）和机器方向（MD）的对准重复性和位置误差方面都面临着分辨率的挑战。本研究提出了一种具有叠加对准功能的辊对板（R2P）转移工艺，以提高对准的可重复性精度。详细的实验分析解决了 TD 和 MD 中的位置误差问题，这些误差分别归因于初始接触误差和线性速度不同步。结果表明，微型 LED 成功转移到了透明电路板 (TCB)，最大位置误差为 3.2 µm，成品率为 99.75%。最终微型 LED 显示屏的透明度达到 72.5%，每英寸 68 个像素。这项研究克服了 R2P 工艺中的对准难题，为透明微型 LED 显示器的商业化做出了贡献。预计它将对涉及轧制工艺的透明应用的制造产生积极影响。
{"title":"Transfer of Micro-LEDs with Roll-Based Direct Overlay Alignment for Manufacturing Transparent Displays","authors":"Sung-Uk Yoon, Yun Hwangbo, Bongkyun Jang, Hyeon-Don Kim, Jae-Hyun Kim","doi":"10.1002/aelm.202400236","DOIUrl":"https://doi.org/10.1002/aelm.202400236","url":null,"abstract":"Transparent displays are crucial for various applications, particularly for their potential use as windows in future self-driving cars. These displays require high transparency, low power consumption, and high mechanical reliability. Micro-LEDs have emerged as ideal devices for the transparent displays. Efficient mass-production processes are essential for the commercialization of transparent micro-LED displays. This study presents roll-based mass transfer to enhance the productivity of transparent micro-LED displays. Roll transfer processes traditionally face resolution challenges in alignment repeatability and positional errors in both the transverse direction (TD) and machine direction (MD). This study proposes a roll-to-plate (R2P) transfer process with overlay alignment to improve the repeatability precision of the alignment. Detailed experimental analyses address positional errors in the TD and MD, attributed to initial contact errors and linear velocity asynchrony, respectively. The results demonstrate successful micro-LED transfer onto a transparent circuit board (TCB) with a maximum positional error of 3.2 µm and a 99.75% yield. The resulting micro-LED display achieves a transparency of 72.5% with 68 pixels per inch. This study overcomes the alignment challenges in the R2P process and contributes to the commercialization of transparent micro-LED displays. It is expected to positively impact the manufacturing of transparent applications that involve rolling processes.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141287387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A study on a bias voltage-dependent weight update characteristics in a sub-threshold region of a low power synaptic pass-transistor (SPT) is presented with a Hf-doped zinc oxide active layer. The SPT is a synaptic thin-film transistor (TFT) in series with a load TFT which is used as a resistive load (RL) to be scaled by a bias voltage (VB). Here, when the VB of the load TFT is modulated, the RL can be changed. With the changed RL, it is expected that the weight update characteristics (i.e., dynamic ratio) and electrical characteristics (i.e., power consumption) of the SPT are varied, respectively, suggesting a trade-off relation between the dynamic ratio and power consumption. To check these, the pulsed characteristics of the fabricated SPT is monitored for different VB, respectively. From experimental results, as increasing VB, it is found that the decreased RL leads to the increase of the power consumption while enhancing the dynamic ratio because a full depression (FD) can be relatively easy. On the other hand, when the VB is reduced, the RL is increased resulting in the decrease of both the power dissipation and the dynamic ratio due to a difficulty of FD.
{"title":"A Bias-Dependent Weight Update Characteristics of Low Power Synaptic Pass-Transistors with a Hf-Doped ZnO Channel Layer","authors":"Danyoung Cha, Jeongseok Pi, Gyoungyeop Do, Nayeong Lee, Kunhee Tae, Sungsik Lee","doi":"10.1002/aelm.202400108","DOIUrl":"https://doi.org/10.1002/aelm.202400108","url":null,"abstract":"A study on a bias voltage-dependent weight update characteristics in a sub-threshold region of a low power synaptic pass-transistor (SPT) is presented with a Hf-doped zinc oxide active layer. The SPT is a synaptic thin-film transistor (TFT) in series with a load TFT which is used as a resistive load (<i>R</i><sub>L</sub>) to be scaled by a bias voltage (<i>V</i><sub>B</sub>). Here, when the <i>V</i><sub>B</sub> of the load TFT is modulated, the <i>R</i><sub>L</sub> can be changed. With the changed <i>R</i><sub>L</sub>, it is expected that the weight update characteristics (i.e., dynamic ratio) and electrical characteristics (i.e., power consumption) of the SPT are varied, respectively, suggesting a trade-off relation between the dynamic ratio and power consumption. To check these, the pulsed characteristics of the fabricated SPT is monitored for different <i>V</i><sub>B</sub>, respectively. From experimental results, as increasing <i>V</i><sub>B</sub>, it is found that the decreased <i>R</i><sub>L</sub> leads to the increase of the power consumption while enhancing the dynamic ratio because a full depression (FD) can be relatively easy. On the other hand, when the <i>V</i><sub>B</sub> is reduced, the <i>R</i><sub>L</sub> is increased resulting in the decrease of both the power dissipation and the dynamic ratio due to a difficulty of FD.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141246281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Han Yan, Pingping Zhuang, Bo Li, Tian Ye, Changjie Zhou, Yushan Chen, Tiejun Li, Weiwei Cai, Daquan Yu, Jing Liu, Weiyi Lin
2D semiconductors have demonstrated outstanding switching performance in resistive random-access memory (RRAM). Despite the proposed resistive switching (RS) mechanism involving the penetration of electrode metal atoms, direct observation of metal penetration in these van-der-Waals stacked 2D semiconductors remains absent. This study utilizes 2D molybdenum disulfide (MoS2) as the switching material, employing gold and multilayer graphene as electrodes. Through analysis of the switching characteristics of these RRAM devices, the pivotal role of grain boundaries and metal atoms is identify in achieving RS. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy provide direct evidence of metal penetration into multilayer MoS2. This study offers valuable insights into the RS mechanism in memristors based on multilayer MoS2, providing guidance for designing and optimizing 2D material memristive devices.
{"title":"Metal Penetration and Grain Boundary in MoS2 Memristors","authors":"Han Yan, Pingping Zhuang, Bo Li, Tian Ye, Changjie Zhou, Yushan Chen, Tiejun Li, Weiwei Cai, Daquan Yu, Jing Liu, Weiyi Lin","doi":"10.1002/aelm.202400264","DOIUrl":"https://doi.org/10.1002/aelm.202400264","url":null,"abstract":"2D semiconductors have demonstrated outstanding switching performance in resistive random-access memory (RRAM). Despite the proposed resistive switching (RS) mechanism involving the penetration of electrode metal atoms, direct observation of metal penetration in these van-der-Waals stacked 2D semiconductors remains absent. This study utilizes 2D molybdenum disulfide (MoS<sub>2</sub>) as the switching material, employing gold and multilayer graphene as electrodes. Through analysis of the switching characteristics of these RRAM devices, the pivotal role of grain boundaries and metal atoms is identify in achieving RS. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy provide direct evidence of metal penetration into multilayer MoS<sub>2</sub>. This study offers valuable insights into the RS mechanism in memristors based on multilayer MoS<sub>2</sub>, providing guidance for designing and optimizing 2D material memristive devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141251814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the last 15 years memristors have been investigated as devices for high-density, low-power, non-volatile, resistive random access memory (ReRAM) beyond Moore's law. They also show potential in neuromorphic logic architectures to overcome the Von–Neumann bottleneck of classical circuitry facilitating better hardware for artificial intelligence (AI) and artificial neural network (ANN) systems. Molybdenum disulfide (MoS2) has emerged as a promising material for memristor devices of monolayer thickness due to its direct bandgap, high carrier mobility and environmental stability. In this review, recent progress in the development of MoS2 memristors the current understanding of the mechanisms behind their function are examined. The remaining obstacles to a commercially viable device principle and how these may be surmounted in light of the rapid progress that has already been made are also discussed.
{"title":"Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects","authors":"R. A. Wells, A. W. Robertson","doi":"10.1002/aelm.202400121","DOIUrl":"https://doi.org/10.1002/aelm.202400121","url":null,"abstract":"In the last 15 years memristors have been investigated as devices for high-density, low-power, non-volatile, resistive random access memory (ReRAM) beyond Moore's law. They also show potential in neuromorphic logic architectures to overcome the Von–Neumann bottleneck of classical circuitry facilitating better hardware for artificial intelligence (AI) and artificial neural network (ANN) systems. Molybdenum disulfide (MoS<sub>2</sub>) has emerged as a promising material for memristor devices of monolayer thickness due to its direct bandgap, high carrier mobility and environmental stability. In this review, recent progress in the development of MoS<sub>2</sub> memristors the current understanding of the mechanisms behind their function are examined. The remaining obstacles to a commercially viable device principle and how these may be surmounted in light of the rapid progress that has already been made are also discussed.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141246286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kwang Jae Lee, Yeong Jae Kim, Jung-Hong Min, Chun Hong Kang, Ram Chandra Subedi, Huafan Zhang, Latifah Al-Maghrabi, Kwangwook Park, Dante Ahn, Yusin Pak, Tien Khee Ng, Young Min Song, Boon S. Ooi, Osman M. Bakr, Jungwook Min
When implementing optoelectronic devices through the stacking of heterogeneous materials, considering the bandgap offset is crucial for achieving efficient carrier dynamics. In this study, the bandgap offset characteristics are investigated when n-type gallium nitride nanowires (n-GaN NWs) are used as electron transport layers in methylammonium lead iodide (MAPbI3)-based optoelectronic devices. n-GaN NWs are grown on indium-tin-oxide (ITO)-coated glass via the plasma-assisted molecular beam epitaxy (PA-MBE) process to form the “GaN NWs-on-glass” platform. A MAPbI3 thin film is then spin-coated on the GaN NWs-on-glass. X-ray photoelectron spectroscopy (XPS) shows that the valence and conduction band offsets in the MAPbI3/n-GaN heterostructure are 2.19 and 0.40 eV, respectively, indicating a type-II band alignment ideal for optoelectronic applications. Prototype photovoltaic devices stacking perovskite on GaN NWs-on-glass show excellent interfacial charge-transfer ability, photon recycling, and carrier extraction efficiency. As a pioneering step in exploiting the diverse potential of the GaN-on-glass, it is demonstrated that the junction characteristics of MAPbI3/n-GaN NW heterostructures can lead to a variety of optoelectronic device applications.
在通过堆叠异质材料实现光电器件时，考虑带隙偏移对于实现高效载流子动力学至关重要。本研究通过等离子体辅助分子束外延（PA-MBE）工艺，将 n 型氮化镓纳米线（n-GaN NWs）生长在涂有铟锡氧化物（ITO）的玻璃上，形成 "GaN NWs-on-glass "平台。然后在玻璃上的氮化镓氮瓦上旋涂 MAPbI3 薄膜。X 射线光电子能谱（XPS）显示，MAPbI3/n-GaN 异质结构中的价带和导带偏移分别为 2.19 和 0.40 eV，这表明其 II 型带排列非常适合光电应用。在玻璃基氮化镓氮瓦上堆叠过氧化物的光伏器件原型显示出卓越的界面电荷转移能力、光子回收和载流子萃取效率。作为开发玻璃基氮化镓各种潜能的先驱，研究表明 MAPbI3/n-GaN NW 异质结构的结特性可带来各种光电器件应用。
{"title":"Characteristics of MAPbI3 Stacked on the GaN Nanowires-On-Glass","authors":"Kwang Jae Lee, Yeong Jae Kim, Jung-Hong Min, Chun Hong Kang, Ram Chandra Subedi, Huafan Zhang, Latifah Al-Maghrabi, Kwangwook Park, Dante Ahn, Yusin Pak, Tien Khee Ng, Young Min Song, Boon S. Ooi, Osman M. Bakr, Jungwook Min","doi":"10.1002/aelm.202400095","DOIUrl":"https://doi.org/10.1002/aelm.202400095","url":null,"abstract":"When implementing optoelectronic devices through the stacking of heterogeneous materials, considering the bandgap offset is crucial for achieving efficient carrier dynamics. In this study, the bandgap offset characteristics are investigated when <i>n</i>-type gallium nitride nanowires (<i>n</i>-GaN NWs) are used as electron transport layers in methylammonium lead iodide (MAPbI<sub>3</sub>)-based optoelectronic devices. <i>n</i>-GaN NWs are grown on indium-tin-oxide (ITO)-coated glass via the plasma-assisted molecular beam epitaxy (PA-MBE) process to form the “GaN NWs-on-glass” platform. A MAPbI<sub>3</sub> thin film is then spin-coated on the GaN NWs-on-glass. X-ray photoelectron spectroscopy (XPS) shows that the valence and conduction band offsets in the MAPbI<sub>3</sub>/<i>n</i>-GaN heterostructure are 2.19 and 0.40 eV, respectively, indicating a type-II band alignment ideal for optoelectronic applications. Prototype photovoltaic devices stacking perovskite on GaN NWs-on-glass show excellent interfacial charge-transfer ability, photon recycling, and carrier extraction efficiency. As a pioneering step in exploiting the diverse potential of the GaN-on-glass, it is demonstrated that the junction characteristics of MAPbI<sub>3</sub>/<i>n</i>-GaN NW heterostructures can lead to a variety of optoelectronic device applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141177952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mingyuan Sheng, Xi Chang, Xiaojun Mao, Yang Gao, Xiaoyang Xuan, Haifen Xie, Haichuan Mu, Yueping Niu, Shangqing Gong, Min Qian
The heterostructure of two-dimensional transition metal dichalcogenide (TMDC) has garnered extensive attention, for the junction is the building block of a semiconductor device. However, the controllable synthesis of TMDC heterostructures of different transition metals and different chalcogen elements is still challenging because of the etching by atom substitution during the chemical vapor deposition (CVD) process. Here, a Mo─O transition state with lower energy is introduced to the edge of an as-grown MoSe2 by using ultraviolet ozone treatment, to prevent the fast atom substitution of S for Se, and enable a stable growth of WS2/MoSe2 lateral heterostructure. A polymer-free transfer method is developed based on capillary interaction, and atomic structure characterization confirms the high-quality WS2/MoSe2 lateral heterostructure. The WS2/MoSe2 lateral heterostructure photodetector exhibits superior photoresponse compared to WS2 and MoSe2 devices, with a responsivity of 21.87 A W−1 and a detectivity of 4.2 × 1012 Jones at 350 nm. Kelvin probe force microscopy result reveals that the built-in electric field within the heterojunction facilitates the effective separation of photogenerated electron-hole pairs. This study carries profound implications for the CVD growth and polymer-free transfer of TMDC heterostructures in photodetector applications.
{"title":"Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure","authors":"Mingyuan Sheng, Xi Chang, Xiaojun Mao, Yang Gao, Xiaoyang Xuan, Haifen Xie, Haichuan Mu, Yueping Niu, Shangqing Gong, Min Qian","doi":"10.1002/aelm.202300842","DOIUrl":"https://doi.org/10.1002/aelm.202300842","url":null,"abstract":"The heterostructure of two-dimensional transition metal dichalcogenide (TMDC) has garnered extensive attention, for the junction is the building block of a semiconductor device. However, the controllable synthesis of TMDC heterostructures of different transition metals and different chalcogen elements is still challenging because of the etching by atom substitution during the chemical vapor deposition (CVD) process. Here, a Mo─O transition state with lower energy is introduced to the edge of an as-grown MoSe<sub>2</sub> by using ultraviolet ozone treatment, to prevent the fast atom substitution of S for Se, and enable a stable growth of WS<sub>2</sub>/MoSe<sub>2</sub> lateral heterostructure. A polymer-free transfer method is developed based on capillary interaction, and atomic structure characterization confirms the high-quality WS<sub>2</sub>/MoSe<sub>2</sub> lateral heterostructure. The WS<sub>2</sub>/MoSe<sub>2</sub> lateral heterostructure photodetector exhibits superior photoresponse compared to WS<sub>2</sub> and MoSe<sub>2</sub> devices, with a responsivity of 21.87 A W<sup>−1</sup> and a detectivity of 4.2 × 10<sup>12</sup> Jones at 350 nm. Kelvin probe force microscopy result reveals that the built-in electric field within the heterojunction facilitates the effective separation of photogenerated electron-hole pairs. This study carries profound implications for the CVD growth and polymer-free transfer of TMDC heterostructures in photodetector applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141177975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Memristor, with the ability of analog computing, is widely investigated for improving the computing efficiency of deep neural networks (DNNs) deployment. However, how to fully take advantage of the analog computing ability of memristive computing system (MCS) for DNN deployment is still an open question. Here, a new neural network models deployment scheme, that is, an information dimension matching (IDM) scheme, is proposed to fully take advantage of the analog computing ability of MCS. Furthermore, the spatial and temporal DNN, that is convolutional neural network (CNN) and recurrent neural network (RNN) is used to verify the proposed deployment scheme, respectively. The experimental results indicate that, compared to the traditional deployment schemes, the proposed deployment scheme shows obvious inference accuracy and energy efficiency improvement (>4 × in four‐layer DNNs deployment), and the energy efficiency improvement increases dramatically with the layers increment of DNNs. This work paves the path for developing high computing efficiency analog MCS.
{"title":"Information Dimension Matching in Memristive Computing System for Analog Deployment of Deep Neural Networks","authors":"Zhe Feng, Zuheng Wu, Xu Wang, Xiuquan Fang, Xumeng Zhang, Jianxun Zou, Jian Lu, Wenbin Guo, Xing Li, Tuo Shi, Zuyu Xu, Yunlai Zhu, Fei Yang, Yuehua Dai, Qi Liu","doi":"10.1002/aelm.202400106","DOIUrl":"https://doi.org/10.1002/aelm.202400106","url":null,"abstract":"Memristor, with the ability of analog computing, is widely investigated for improving the computing efficiency of deep neural networks (DNNs) deployment. However, how to fully take advantage of the analog computing ability of memristive computing system (MCS) for DNN deployment is still an open question. Here, a new neural network models deployment scheme, that is, an information dimension matching (IDM) scheme, is proposed to fully take advantage of the analog computing ability of MCS. Furthermore, the spatial and temporal DNN, that is convolutional neural network (CNN) and recurrent neural network (RNN) is used to verify the proposed deployment scheme, respectively. The experimental results indicate that, compared to the traditional deployment schemes, the proposed deployment scheme shows obvious inference accuracy and energy efficiency improvement (>4 × in four‐layer DNNs deployment), and the energy efficiency improvement increases dramatically with the layers increment of DNNs. This work paves the path for developing high computing efficiency analog MCS.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141177422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yunwoo Shin, Juhee Jeon, Kyoungah Cho, Sangsig Kim
This study presents a binarized neural network (BNN) comprising quasi‐nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec−1) and a high on/off ratio (≥ 107). A pair of QNVM devices are used for a single synaptic cell in a cell array, in which its memory state represents the synaptic weight, and the voltages applied to the pair act as input in a complementary fashion. The array of synaptic cells performs matrix multiply‐accumulate (MAC) operations between the weight matrix and input vector using XNOR and current summation. All the results of the MAC operations and vector‐matrix multiplications are equivalent. Moreover, the BNN features a high accuracy of 93.32% in the MNIST image recognition simulation owing to high device uniformity (1.35%), which demonstrates the feasibility of compact and high‐performance neuromorphic computing.
{"title":"Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing","authors":"Yunwoo Shin, Juhee Jeon, Kyoungah Cho, Sangsig Kim","doi":"10.1002/aelm.202400061","DOIUrl":"https://doi.org/10.1002/aelm.202400061","url":null,"abstract":"This study presents a binarized neural network (BNN) comprising quasi‐nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec<jats:sup>−1</jats:sup>) and a high on/off ratio (≥ 10<jats:sup>7</jats:sup>). A pair of QNVM devices are used for a single synaptic cell in a cell array, in which its memory state represents the synaptic weight, and the voltages applied to the pair act as input in a complementary fashion. The array of synaptic cells performs matrix multiply‐accumulate (MAC) operations between the weight matrix and input vector using XNOR and current summation. All the results of the MAC operations and vector‐matrix multiplications are equivalent. Moreover, the BNN features a high accuracy of 93.32% in the MNIST image recognition simulation owing to high device uniformity (1.35%), which demonstrates the feasibility of compact and high‐performance neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141177321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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