Pub Date : 2005-10-31DOI: 10.1109/ICSENS.2005.1597731
S. Hirsch, S. Doerner, D.J. Salazar Velez, R. Lucklum, B. Schmidt, P. Hauptmann, V. Ferrari, M. Ferrari
Thick-film piezoelectric transducers have been produced and tested for implementation into a MEMS ultrasonic sensor array. The arrays are intended to be used for beam forming in sensing applications for fluidics in channels at millimeter or micrometer scale (e.g. flow rate measurement, detection of beads, bubbles). Stripe and matrix aligned elements have been fabricated for one-dimensional and two-dimensional beam steering, respectively. In this contribution we further concentrate on an improved Q-factor and PZT layer homogeneity as a major requirement for the transducer elements
{"title":"Thick-film PZT transducers for silicon micro machined sensor arrays","authors":"S. Hirsch, S. Doerner, D.J. Salazar Velez, R. Lucklum, B. Schmidt, P. Hauptmann, V. Ferrari, M. Ferrari","doi":"10.1109/ICSENS.2005.1597731","DOIUrl":"https://doi.org/10.1109/ICSENS.2005.1597731","url":null,"abstract":"Thick-film piezoelectric transducers have been produced and tested for implementation into a MEMS ultrasonic sensor array. The arrays are intended to be used for beam forming in sensing applications for fluidics in channels at millimeter or micrometer scale (e.g. flow rate measurement, detection of beads, bubbles). Stripe and matrix aligned elements have been fabricated for one-dimensional and two-dimensional beam steering, respectively. In this contribution we further concentrate on an improved Q-factor and PZT layer homogeneity as a major requirement for the transducer elements","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132680852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-31DOI: 10.1109/ICSENS.2005.1597923
K. Ueno, T. Hirose, T. Asai, Y. Amemiya
We developed a CMOS integrated-circuit sensor that simulates the change in quality of various perishables. This sensor is attached to each perishable goods such as farm and marine products and is carried from producers to consumers with the goods. During the distribution process, the sensor experiences the surrounding temperature and simulates the deterioration of the goods that is caused by the temperatures. By reading the output of the sensor, consumers can know whether the goods are fresh or not. This sensor consists of subthreshold CMOS circuits with a low-power consumption of 5 muW or less
{"title":"A CMOS watch-dog sensor for guaranteeing the quality of perishables","authors":"K. Ueno, T. Hirose, T. Asai, Y. Amemiya","doi":"10.1109/ICSENS.2005.1597923","DOIUrl":"https://doi.org/10.1109/ICSENS.2005.1597923","url":null,"abstract":"We developed a CMOS integrated-circuit sensor that simulates the change in quality of various perishables. This sensor is attached to each perishable goods such as farm and marine products and is carried from producers to consumers with the goods. During the distribution process, the sensor experiences the surrounding temperature and simulates the deterioration of the goods that is caused by the temperatures. By reading the output of the sensor, consumers can know whether the goods are fresh or not. This sensor consists of subthreshold CMOS circuits with a low-power consumption of 5 muW or less","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133201572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-31DOI: 10.1109/ICSENS.2005.1597966
J. Ueda, Y. Ishida, I. Ogasawara, R.I. Shichiku, T. Nakano
This paper presents a compact pointing device using an electrostatic capacitance fingerprint sensor that can also used as a fingerprint verification system. The sensor has a removable cover with 4 protruding portions made from conductive rubber. This cover is used during the pointing operation. Pressure distribution on the cover pressed by the operator is detected by processing of sensor images responding to the conductive rubber. Performance test was conducted to compare the performance of the proposed device with that of track point and touch pad. Promising result was obtained
{"title":"Development of a compact pointing device utilizing static-capacity fingerprint sensor","authors":"J. Ueda, Y. Ishida, I. Ogasawara, R.I. Shichiku, T. Nakano","doi":"10.1109/ICSENS.2005.1597966","DOIUrl":"https://doi.org/10.1109/ICSENS.2005.1597966","url":null,"abstract":"This paper presents a compact pointing device using an electrostatic capacitance fingerprint sensor that can also used as a fingerprint verification system. The sensor has a removable cover with 4 protruding portions made from conductive rubber. This cover is used during the pointing operation. Pressure distribution on the cover pressed by the operator is detected by processing of sensor images responding to the conductive rubber. Performance test was conducted to compare the performance of the proposed device with that of track point and touch pad. Promising result was obtained","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127853395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-31DOI: 10.1109/ICSENS.2005.1597681
D. Wilson, L. Hansen
The impact of the choice of measurement circuit and of thermal noise on the resolving power (discrimination capability) of an array of composite polymer chemiresistors is presented. Semi-empirical models for the composite polymer resistors are used to simulate the behavior of these chemical sensors in a working array using a general purpose simulation tool (the ENose Toolbox). Results show that (a) measurement circuits that reduce or eliminate the effects of the baseline resistance have higher resolving power than those circuits that retain baseline information and (b) thermal noise impacts the resolving power of arrays that contain chemiresistors of lower sensitivity
{"title":"ENose Toolbox: application to array optimization including electronic measurement and noise effects for composite polymer chemiresistors","authors":"D. Wilson, L. Hansen","doi":"10.1109/ICSENS.2005.1597681","DOIUrl":"https://doi.org/10.1109/ICSENS.2005.1597681","url":null,"abstract":"The impact of the choice of measurement circuit and of thermal noise on the resolving power (discrimination capability) of an array of composite polymer chemiresistors is presented. Semi-empirical models for the composite polymer resistors are used to simulate the behavior of these chemical sensors in a working array using a general purpose simulation tool (the ENose Toolbox). Results show that (a) measurement circuits that reduce or eliminate the effects of the baseline resistance have higher resolving power than those circuits that retain baseline information and (b) thermal noise impacts the resolving power of arrays that contain chemiresistors of lower sensitivity","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134497848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-31DOI: 10.1109/ICSENS.2005.1597908
K. Makinwa, J. Witte
In this paper, a temperature sensor based on the thermal diffusion constant of silicon is presented. It consists of an oscillator whose frequency is determined by the phase-shift of a thermal filter. The filter consists of two heaters and a thermopile implemented in the substrate of a standard CMOS chip. In the thermal domain, this filter has a low-pass characteristic, whose phase shift is determined solely by its physical dimensions and by the thermal diffusion constant of silicon. Since the latter is temperature dependent and essentially process independent, the oscillator's frequency can be used as a well-defined, microprocessor-compatible, measure of temperature. Measurements on 8 samples show that the sensor's inaccuracy is less than plusmn2degC over the temperature range -50degC to 125degC
{"title":"A temperature sensor based on a thermal oscillator","authors":"K. Makinwa, J. Witte","doi":"10.1109/ICSENS.2005.1597908","DOIUrl":"https://doi.org/10.1109/ICSENS.2005.1597908","url":null,"abstract":"In this paper, a temperature sensor based on the thermal diffusion constant of silicon is presented. It consists of an oscillator whose frequency is determined by the phase-shift of a thermal filter. The filter consists of two heaters and a thermopile implemented in the substrate of a standard CMOS chip. In the thermal domain, this filter has a low-pass characteristic, whose phase shift is determined solely by its physical dimensions and by the thermal diffusion constant of silicon. Since the latter is temperature dependent and essentially process independent, the oscillator's frequency can be used as a well-defined, microprocessor-compatible, measure of temperature. Measurements on 8 samples show that the sensor's inaccuracy is less than plusmn2degC over the temperature range -50degC to 125degC","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131298945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-31DOI: 10.1109/ICSENS.2005.1597922
T. Hirose, Y. Asai, Y. Amemiya, T. Matsuoka, K. Taniguchi
An ultralow power constant reference current circuit with low temperature dependence for micropower electronic applications is proposed in this paper. This circuit consists of a constant-current subcircuit and a bias-voltage subcircuits, and it compensates for the temperature characteristics of mobility thermal voltage VT, and threshold voltage VTH in such a way that the reference current has small temperature dependence. A SPICE simulation demonstrated that reference current and total power dissipation is 97.7nA, 1.1mu W, respectively, and the variation in the reference current can be kept very small within +4% in a temperature range from -20 to 100 degC
{"title":"Ultralow-power temperature-insensitive current reference circuit","authors":"T. Hirose, Y. Asai, Y. Amemiya, T. Matsuoka, K. Taniguchi","doi":"10.1109/ICSENS.2005.1597922","DOIUrl":"https://doi.org/10.1109/ICSENS.2005.1597922","url":null,"abstract":"An ultralow power constant reference current circuit with low temperature dependence for micropower electronic applications is proposed in this paper. This circuit consists of a constant-current subcircuit and a bias-voltage subcircuits, and it compensates for the temperature characteristics of mobility thermal voltage VT, and threshold voltage VTH in such a way that the reference current has small temperature dependence. A SPICE simulation demonstrated that reference current and total power dissipation is 97.7nA, 1.1mu W, respectively, and the variation in the reference current can be kept very small within +4% in a temperature range from -20 to 100 degC","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"231 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115568026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-31DOI: 10.1109/ICSENS.2005.1597682
K. Ngo, P. Lauque, K. Aguir
This paper describes a procedure to improve the sensor selectivity using a sensor array which is built with four sensors (Figaro and MiCS sensors). The heating temperature of each sensor is modulated between 200degC and 450degC by a triangular signal with a frequency of 25 mHz. Principal component analysis is used to discriminate among three reducing gases (carbon monoxide, acetylene and hydrogen sulfide). New data of unknown gas are tested and the identification results demonstrate the potentiality of this method
{"title":"Identification of toxic gases with a sensor array using temperature modulation","authors":"K. Ngo, P. Lauque, K. Aguir","doi":"10.1109/ICSENS.2005.1597682","DOIUrl":"https://doi.org/10.1109/ICSENS.2005.1597682","url":null,"abstract":"This paper describes a procedure to improve the sensor selectivity using a sensor array which is built with four sensors (Figaro and MiCS sensors). The heating temperature of each sensor is modulated between 200degC and 450degC by a triangular signal with a frequency of 25 mHz. Principal component analysis is used to discriminate among three reducing gases (carbon monoxide, acetylene and hydrogen sulfide). New data of unknown gas are tested and the identification results demonstrate the potentiality of this method","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117020740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-31DOI: 10.1109/ICSENS.2005.1597940
T. Schary, M. Meiners, W. Lang, W. Benecke
This paper reports the fabrication and characterization of capacitive pressure sensors on fused silica substrates operable in normal- and touch-mode. It demonstrates the feasibility of surface micromachining of LPCVD layers on fused silica. This substrate offers advantages for capacitive transducers: elimination of parasitic capacitances, simplification of the sensor equivalent circuit and improvement of membrane stress control. Backend processing is enhanced: substrate contacts are unnecessary, large bond pads and conductive adhesives do not create parasitic capacitances. A set of fabricated sensors is presented and the measured characteristics agree well with the electrical and mechanical models. The designs feature: die sizes of 0.66 mm2 and high touch-mode sensitivities up to 26%/bar FS
{"title":"Fused silica as substrate material for surface micromachined capacitive pressure sensors operable in touch-mode","authors":"T. Schary, M. Meiners, W. Lang, W. Benecke","doi":"10.1109/ICSENS.2005.1597940","DOIUrl":"https://doi.org/10.1109/ICSENS.2005.1597940","url":null,"abstract":"This paper reports the fabrication and characterization of capacitive pressure sensors on fused silica substrates operable in normal- and touch-mode. It demonstrates the feasibility of surface micromachining of LPCVD layers on fused silica. This substrate offers advantages for capacitive transducers: elimination of parasitic capacitances, simplification of the sensor equivalent circuit and improvement of membrane stress control. Backend processing is enhanced: substrate contacts are unnecessary, large bond pads and conductive adhesives do not create parasitic capacitances. A set of fabricated sensors is presented and the measured characteristics agree well with the electrical and mechanical models. The designs feature: die sizes of 0.66 mm2 and high touch-mode sensitivities up to 26%/bar FS","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123477678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-31DOI: 10.1109/ICSENS.2005.1597807
S. Chakravarty, J. Topolancik, P. Bhattacharya, S. Chakrabarti, Y. Kang, M. Meyerhoff
An optical ion sensor based on the shifts of resonance of a photonic crystal microcavity coated with an ion sensing polymer is demonstrated. A 20nm shift is observed for perchlorate ion and a 5nm shift is observed for calcium cation
{"title":"Photonic crystal microcavity source based ion sensor","authors":"S. Chakravarty, J. Topolancik, P. Bhattacharya, S. Chakrabarti, Y. Kang, M. Meyerhoff","doi":"10.1109/ICSENS.2005.1597807","DOIUrl":"https://doi.org/10.1109/ICSENS.2005.1597807","url":null,"abstract":"An optical ion sensor based on the shifts of resonance of a photonic crystal microcavity coated with an ion sensing polymer is demonstrated. A 20nm shift is observed for perchlorate ion and a 5nm shift is observed for calcium cation","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121949513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-10-31DOI: 10.1109/ICSENS.2005.1597653
O. Brand
The paper provides an overview of resonant sensors based on CMOS technology. Applications of these sensors range from inertial sensors to chemical/biochemical sensors, from atomic force microscopy to high-frequency filters. CMOS technology enables to co-integrate the resonant microstructures with necessary analog and digital circuit functions. The paper discusses CMOS-based fabrication approaches for resonant sensors, possible sensing and actuation schemes, suitable resonator materials, geometries and vibration modes. Two CMOS-based microsystems are highlighted: (i) a resonant chemical sensor and (ii) a resonant magnetic field sensor
{"title":"CMOS-based resonant sensors","authors":"O. Brand","doi":"10.1109/ICSENS.2005.1597653","DOIUrl":"https://doi.org/10.1109/ICSENS.2005.1597653","url":null,"abstract":"The paper provides an overview of resonant sensors based on CMOS technology. Applications of these sensors range from inertial sensors to chemical/biochemical sensors, from atomic force microscopy to high-frequency filters. CMOS technology enables to co-integrate the resonant microstructures with necessary analog and digital circuit functions. The paper discusses CMOS-based fabrication approaches for resonant sensors, possible sensing and actuation schemes, suitable resonator materials, geometries and vibration modes. Two CMOS-based microsystems are highlighted: (i) a resonant chemical sensor and (ii) a resonant magnetic field sensor","PeriodicalId":119985,"journal":{"name":"IEEE Sensors, 2005.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120814225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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