Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230710
Sona Carpenter, Z. He, H. Zirath
This paper presents a 110–170 GHz direct conversion I/Q modulator realized in 130 nm SiGe BiCMOS technology with ft/fmax values of 250 GHz/ 370 GHz. The design is based on double-balanced Gilbert mixer cells with on-chip quadrature LO phase shifter and RF balun. In single-sideband operation, the modulator exhibits up to 9.5 dB conversion gain and has measured 3 dB IF bandwidth of 12 GHz. The measured image rejection ratio and LO to RF isolation are as high as 20 dB and 31 dB respectively. Measured input P1dB is −17 dBm at 127 GHz output. The dc power consumption is 53 mW. The active chip area is 620 pm∗ 480 pm including the RF and LO baluns. The circuit is capable of transmitting more than 12 Gbit/s QPSK signal.
{"title":"A direct carrier I/Q modulator for high-speed communication at D-band using 130nm SiGe BiCMOS technology","authors":"Sona Carpenter, Z. He, H. Zirath","doi":"10.23919/EUMIC.2017.8230710","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230710","url":null,"abstract":"This paper presents a 110–170 GHz direct conversion I/Q modulator realized in 130 nm SiGe BiCMOS technology with ft/fmax values of 250 GHz/ 370 GHz. The design is based on double-balanced Gilbert mixer cells with on-chip quadrature LO phase shifter and RF balun. In single-sideband operation, the modulator exhibits up to 9.5 dB conversion gain and has measured 3 dB IF bandwidth of 12 GHz. The measured image rejection ratio and LO to RF isolation are as high as 20 dB and 31 dB respectively. Measured input P1dB is −17 dBm at 127 GHz output. The dc power consumption is 53 mW. The active chip area is 620 pm∗ 480 pm including the RF and LO baluns. The circuit is capable of transmitting more than 12 Gbit/s QPSK signal.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133284657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230690
T. Huber, R. Quay, W. Bosch
This paper presents a new technique to control the gain of cascodes in broadband power amplifiers. The concept replaces the constant stabilization capacitance Cst in the gate path of the common-gate stage by a variable adjustable capacitance. The influence of the stabilization capacitance is shown since the classical cascode cell is modified nowadays for power optimization and/or stability purposes. Two cascode broadband feedback power amplifiers were designed to verify the new idea using an AlGaN/GaN technology. Maintaining an input and output matching better than −10 dB, the conventional cascode design and the new cascode design achieve 13 dB gain with a bandwidth of 17 GHz. Both designs reach an output power of 30 dBm. The small-signal gain of the new concept can be varied between 13 dB and 17 dB by an external control-voltage without changing the operation class of the power amplifier. The concept allows an electronic compensation of process variations as well as a frequency-response calibration of broadband power amplifier systems.
{"title":"New concept to control the gain of GaN-cascodes in broadband power amplifiers","authors":"T. Huber, R. Quay, W. Bosch","doi":"10.23919/EUMIC.2017.8230690","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230690","url":null,"abstract":"This paper presents a new technique to control the gain of cascodes in broadband power amplifiers. The concept replaces the constant stabilization capacitance Cst in the gate path of the common-gate stage by a variable adjustable capacitance. The influence of the stabilization capacitance is shown since the classical cascode cell is modified nowadays for power optimization and/or stability purposes. Two cascode broadband feedback power amplifiers were designed to verify the new idea using an AlGaN/GaN technology. Maintaining an input and output matching better than −10 dB, the conventional cascode design and the new cascode design achieve 13 dB gain with a bandwidth of 17 GHz. Both designs reach an output power of 30 dBm. The small-signal gain of the new concept can be varied between 13 dB and 17 dB by an external control-voltage without changing the operation class of the power amplifier. The concept allows an electronic compensation of process variations as well as a frequency-response calibration of broadband power amplifier systems.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"57 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132192433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230669
Florian Huhn, A. Wentzel, W. Heinrich
This paper presents a fully digital transmitter chain, including a modulator and a digital microwave power amplifier (PA) MMIC. It uses push-pull drivers for the gates of the class-D final stage for improved switching speed. To the authors' knowledge this is the first time this approach is implemented on a GaN HEMT process. The performance of the flexible and compact chip is evaluated with modulated baseband signals at a 900 MHz carrier. For encoding the IQ signals into a binary stream, a modulation scheme with a built-in DPD is used, resulting in a higher line-up efficiency as no additional computational power is dissipated. ACLR values of more than 43.5 dB are reached almost fulfilling the 3GPP spectral requirements. A comparison of achieved signal quality to other publications is given.
{"title":"GaN-based digital transmitter chain utilizing push-pull gate drivers for high switching speed and built-in DPD","authors":"Florian Huhn, A. Wentzel, W. Heinrich","doi":"10.23919/EUMIC.2017.8230669","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230669","url":null,"abstract":"This paper presents a fully digital transmitter chain, including a modulator and a digital microwave power amplifier (PA) MMIC. It uses push-pull drivers for the gates of the class-D final stage for improved switching speed. To the authors' knowledge this is the first time this approach is implemented on a GaN HEMT process. The performance of the flexible and compact chip is evaluated with modulated baseband signals at a 900 MHz carrier. For encoding the IQ signals into a binary stream, a modulation scheme with a built-in DPD is used, resulting in a higher line-up efficiency as no additional computational power is dissipated. ACLR values of more than 43.5 dB are reached almost fulfilling the 3GPP spectral requirements. A comparison of achieved signal quality to other publications is given.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132285607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1017/S1759078718000624
Insaf Lahbib, S. Wane, D. Lesenechal, A. Doukkali, T. Dinh, L. Leyssenne, R. Germanicus, F. Bezerra, G. Rolland, C. Andrei, G. Imbert, Patrick Martin, P. Descamps, G. Boguszewski, D. Bajon
In this contribution, impact of extreme environmental conditions in terms of energy-level radiation of protons on SiGe integrated circuits is experimentally studied. Canonical representative structures including linear (passive interconnects/antennas) and non-linear (Low Noise Amplifiers) are used as carriers for assessing impact of aggressive stress conditions on their performances. Perspectives for holistic Modeling and Characterization approaches accounting for various interaction mechanisms (substrate resistivity variations, couplings/interferences, drift in DC and RF characteristics, for actives are down to allow for optimal solutions in pushing SiGe technologies toward applications with harsh and radiation-intense environments (e.g., Space, Nuclear, Military). Specific design prototypes are built for assessing mission-critical profiles for emerging RF and mm-Wave applications.
{"title":"Reliability analysis of BiCMOS SiGe:C technology under aggressive conditions for emerging RF and mm-Wave applications","authors":"Insaf Lahbib, S. Wane, D. Lesenechal, A. Doukkali, T. Dinh, L. Leyssenne, R. Germanicus, F. Bezerra, G. Rolland, C. Andrei, G. Imbert, Patrick Martin, P. Descamps, G. Boguszewski, D. Bajon","doi":"10.1017/S1759078718000624","DOIUrl":"https://doi.org/10.1017/S1759078718000624","url":null,"abstract":"In this contribution, impact of extreme environmental conditions in terms of energy-level radiation of protons on SiGe integrated circuits is experimentally studied. Canonical representative structures including linear (passive interconnects/antennas) and non-linear (Low Noise Amplifiers) are used as carriers for assessing impact of aggressive stress conditions on their performances. Perspectives for holistic Modeling and Characterization approaches accounting for various interaction mechanisms (substrate resistivity variations, couplings/interferences, drift in DC and RF characteristics, for actives are down to allow for optimal solutions in pushing SiGe technologies toward applications with harsh and radiation-intense environments (e.g., Space, Nuclear, Military). Specific design prototypes are built for assessing mission-critical profiles for emerging RF and mm-Wave applications.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116902055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230699
T. N. T. Do, Mikael Hörberg, S. Lai, Sven-Henrik Wollersjo, Daniel Johansson, H. Zirath, D. Kuylenstierna
This paper reports on a Voltage-Controlled-Oscillator (VCO) chip set covering 7–13 GHz with phase noise better than −125 dBc/Hz at 1 MHz off-set. The chip set is implemented in GaN HEMT MMIC technology and designed for use in satellite transponders. 6 VCOs are used to cover the full range, each of them has tuning range about 1 GHz with output power in the order of 5 dBm. GaN HEMT technology is chosen for good radiation hardness and for the high power capability, enabling high signal-to-noise ratio and good far-carrier phase noise performance which is needed in future wideband communication systems.
{"title":"7–13 GHz MMIC GaN HEMT Voltage-Controlled-Oscillators (VCOs) for satellite applications","authors":"T. N. T. Do, Mikael Hörberg, S. Lai, Sven-Henrik Wollersjo, Daniel Johansson, H. Zirath, D. Kuylenstierna","doi":"10.23919/EUMIC.2017.8230699","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230699","url":null,"abstract":"This paper reports on a Voltage-Controlled-Oscillator (VCO) chip set covering 7–13 GHz with phase noise better than −125 dBc/Hz at 1 MHz off-set. The chip set is implemented in GaN HEMT MMIC technology and designed for use in satellite transponders. 6 VCOs are used to cover the full range, each of them has tuning range about 1 GHz with output power in the order of 5 dBm. GaN HEMT technology is chosen for good radiation hardness and for the high power capability, enabling high signal-to-noise ratio and good far-carrier phase noise performance which is needed in future wideband communication systems.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"40 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124853476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230675
S. Probst, T. Martinelli, S. Seewald, B. Geck, D. Manteuffel
In this contribution a 44.5 dBm gallium nitride (GaN) based Doherty amplifier for a center frequency of 4900 MHz is presented. The developed Doherty amplifier uses an unsymmetrical power division and offset lines for optimization of the load modulation over the dynamic output range. Various drain supply voltages of the carrier and the peak amplifier are used to optimize the gain. Furthermore, the error vector magnitude (EVM) and the adjacent channel leakage ratio (ACLR) are reduced by using a memoryless digital predistortion (DPD) based on lookup table (LUT) model. All this design strategies improve the linearity of the Doherty amplifier.
{"title":"Design of a linearized and efficient doherty amplifier for C-band applications","authors":"S. Probst, T. Martinelli, S. Seewald, B. Geck, D. Manteuffel","doi":"10.23919/EUMIC.2017.8230675","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230675","url":null,"abstract":"In this contribution a 44.5 dBm gallium nitride (GaN) based Doherty amplifier for a center frequency of 4900 MHz is presented. The developed Doherty amplifier uses an unsymmetrical power division and offset lines for optimization of the load modulation over the dynamic output range. Various drain supply voltages of the carrier and the peak amplifier are used to optimize the gain. Furthermore, the error vector magnitude (EVM) and the adjacent channel leakage ratio (ACLR) are reduced by using a memoryless digital predistortion (DPD) based on lookup table (LUT) model. All this design strategies improve the linearity of the Doherty amplifier.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127123071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230746
S. Daskalakis, A. Georgiadis, A. Collado, M. Tentzeris
In this paper an efficient for low power input, low-cost and low-complexity rectifier is designed and simulated including component and layout parasitics. The rectifier consists of a charge pump and a ladder LC matching network. It has also a wideband RF-dc conversion efficiency which remains constant within ±2% from 300 MHz to 900 MHz. The rectifier was based on two commercial off-the-shelf Schottky diodes and low cost paper substrate was used for the layout. Three ladder LC impedance matching were simulated and it was verified that by increasing the number of LC sections to three, it is possible to cover the desired frequency bandwidth.
{"title":"An UHF rectifier with 100% bandwidth based on a ladder LC impedance matching network","authors":"S. Daskalakis, A. Georgiadis, A. Collado, M. Tentzeris","doi":"10.23919/EUMIC.2017.8230746","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230746","url":null,"abstract":"In this paper an efficient for low power input, low-cost and low-complexity rectifier is designed and simulated including component and layout parasitics. The rectifier consists of a charge pump and a ladder LC matching network. It has also a wideband RF-dc conversion efficiency which remains constant within ±2% from 300 MHz to 900 MHz. The rectifier was based on two commercial off-the-shelf Schottky diodes and low cost paper substrate was used for the layout. Three ladder LC impedance matching were simulated and it was verified that by increasing the number of LC sections to three, it is possible to cover the desired frequency bandwidth.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131076146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230665
N. Leder, B. Pichler, G. Magerl, H. Arthaber
The efficient development of all-digital RF-transmitters (DRFTx) requires models that can capture the memory induced, nonlinear behavior of the circuitry. Broadband time-domain models work well for this application, although, gaining dependable model prediction errors from verification measurements is difficult. For the presented DRFTx, the model predicts output signals over the full bandwidth (DC-20 GHz) of the used active device. This makes it very sensitive to synchronization errors. This work illustrates that by comparing the estimated prediction errors of such models, calculated during model training, to measurements of the same DRFTx test setup when used as LTE transmitter. It is shown that the impact of residual synchronization errors on the computed verification error is strongly dependent on the method utilized to compute it. It is also discussed which limitations in the measurement setup cause errors and how they can be considered by the error analysis. Finally, it is shown that time-frequency methods offer an elegant way of calculating more robust verification errors for such systems.
{"title":"Robust verification of look-up-table-based models for all-digital RF-transmitters","authors":"N. Leder, B. Pichler, G. Magerl, H. Arthaber","doi":"10.23919/EUMIC.2017.8230665","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230665","url":null,"abstract":"The efficient development of all-digital RF-transmitters (DRFTx) requires models that can capture the memory induced, nonlinear behavior of the circuitry. Broadband time-domain models work well for this application, although, gaining dependable model prediction errors from verification measurements is difficult. For the presented DRFTx, the model predicts output signals over the full bandwidth (DC-20 GHz) of the used active device. This makes it very sensitive to synchronization errors. This work illustrates that by comparing the estimated prediction errors of such models, calculated during model training, to measurements of the same DRFTx test setup when used as LTE transmitter. It is shown that the impact of residual synchronization errors on the computed verification error is strongly dependent on the method utilized to compute it. It is also discussed which limitations in the measurement setup cause errors and how they can be considered by the error analysis. Finally, it is shown that time-frequency methods offer an elegant way of calculating more robust verification errors for such systems.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123113537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230718
J. Villemazet, H. Yahi, B. Lefebvre, F. Baudeigne, J. Maynard, G. Soubercaze-Pun, L. Lapierre
This paper describes a new instantaneous wideband predistortion linearizer for TWTA enabling to use simultaneously broadband multi-carrier signals all over the complete 17.3–20.2GHz transmit Ka-band for the new generation of Telecom satellite. The linearizer has been embedded in a space equipment and successfully tested with a wideband Ka-band space TWTA. A state-of-the-art NPR performance was obtained over the entire 17.3–20.2GHz Ka-band with multi-carrier signals up to a 2.9GHz instantaneous bandwidth.
{"title":"New Ka-band analog predistortion linearizer allowing a 2.9GHz instantaneous wideband satellite operation","authors":"J. Villemazet, H. Yahi, B. Lefebvre, F. Baudeigne, J. Maynard, G. Soubercaze-Pun, L. Lapierre","doi":"10.23919/EUMIC.2017.8230718","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230718","url":null,"abstract":"This paper describes a new instantaneous wideband predistortion linearizer for TWTA enabling to use simultaneously broadband multi-carrier signals all over the complete 17.3–20.2GHz transmit Ka-band for the new generation of Telecom satellite. The linearizer has been embedded in a space equipment and successfully tested with a wideband Ka-band space TWTA. A state-of-the-art NPR performance was obtained over the entire 17.3–20.2GHz Ka-band with multi-carrier signals up to a 2.9GHz instantaneous bandwidth.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127556234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230748
D. H. Johansen, J. Sánchez-Heredia, V. Zhurbenko, Jan H. Ardenkjsr-Larsen
High signal to noise ratio (SNR) in magnetic resonance imaging is vital for ensuring accurate diagnosis and treatment. Arrays of surface coils for receive only purposes is a well established way to increase SNR. However, due to crosstalk between the array elements, the SNR can be severely degraded. For that reason, arrays often do not exploit their full potential. By using a series decoupling network with non-conventional matching and preamplifier impedances the decoupling between elements can be increased significantly. In the presented design example, almost 6 dB additional decoupling can be achieved with no impairment of preamplifier noise figure. The decoupling changes as a function of both coil and preamplifier performance. Thus, the fundamental trade-off between noise and decoupling is discussed. This work embarks on the path towards new vistas in design of preamplifiers for surface coil arrays for magnetic resonance imaging.
{"title":"Towards new vistas in preamplifier design for MRI","authors":"D. H. Johansen, J. Sánchez-Heredia, V. Zhurbenko, Jan H. Ardenkjsr-Larsen","doi":"10.23919/EUMIC.2017.8230748","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230748","url":null,"abstract":"High signal to noise ratio (SNR) in magnetic resonance imaging is vital for ensuring accurate diagnosis and treatment. Arrays of surface coils for receive only purposes is a well established way to increase SNR. However, due to crosstalk between the array elements, the SNR can be severely degraded. For that reason, arrays often do not exploit their full potential. By using a series decoupling network with non-conventional matching and preamplifier impedances the decoupling between elements can be increased significantly. In the presented design example, almost 6 dB additional decoupling can be achieved with no impairment of preamplifier noise figure. The decoupling changes as a function of both coil and preamplifier performance. Thus, the fundamental trade-off between noise and decoupling is discussed. This work embarks on the path towards new vistas in design of preamplifiers for surface coil arrays for magnetic resonance imaging.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125909630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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