Pub Date : 1900-01-01DOI: 10.23919/eumc.2017.8231027
Suguru Habu, Caoyu Li, Y. Yamao
A novel wideband digital predistortion (DPD) technique that enables a simpler feedback circuit is proposed. The proposed scalar feedback method in baseband can reduce the number of analog to digital converter (ADC) while keeping its bandwidth same as the conventional method. DPD parameter determination algorithm is modified to enable the scalar feedback. To compare the performance of the proposed and conventional techniques, computer simulations are conducted. The results show that they have the same performance in terms of adjacent channel leakage power ratio (ACLR) and error vector magnitude (EVM). Experiments using carrier-aggregated LTE signal with two component carriers are also conducted to validate the results. The proposed technique can provide high nonlinear compensation performance with lower circuit complexity.
{"title":"Spectrum-folding scalar-feedback architecture for wideband DPD with simple feedback circuit","authors":"Suguru Habu, Caoyu Li, Y. Yamao","doi":"10.23919/eumc.2017.8231027","DOIUrl":"https://doi.org/10.23919/eumc.2017.8231027","url":null,"abstract":"A novel wideband digital predistortion (DPD) technique that enables a simpler feedback circuit is proposed. The proposed scalar feedback method in baseband can reduce the number of analog to digital converter (ADC) while keeping its bandwidth same as the conventional method. DPD parameter determination algorithm is modified to enable the scalar feedback. To compare the performance of the proposed and conventional techniques, computer simulations are conducted. The results show that they have the same performance in terms of adjacent channel leakage power ratio (ACLR) and error vector magnitude (EVM). Experiments using carrier-aggregated LTE signal with two component carriers are also conducted to validate the results. The proposed technique can provide high nonlinear compensation performance with lower circuit complexity.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125479921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/eumc.2017.8231033
H. Chu, Hua-Chien Liao, G. Li, T. Ma
A novel phase reconfigurable synthesized transmission line is proposed in this paper. By utilizing quasilumped elements and varactor diodes, the synthesized line functions as a 1-bit phase shifter by switching its electrical length between two states; the characteristic impedance, meanwhile, is kept unaltered. The design concept, circuit model, and performance are carefully investigated and discussed. Based on newly developed synthesized line, a reconfigurable hybrid coupler, which can be electrically switched between a rat-race or branch-line coupler at the same frequency, is designed as a demonstration. The measured results showed acceptable insertion loss level and good output phase response.
{"title":"Novel phase reconfigurable synthesized transmission line and its application to reconfigurable hybrid coupler","authors":"H. Chu, Hua-Chien Liao, G. Li, T. Ma","doi":"10.23919/eumc.2017.8231033","DOIUrl":"https://doi.org/10.23919/eumc.2017.8231033","url":null,"abstract":"A novel phase reconfigurable synthesized transmission line is proposed in this paper. By utilizing quasilumped elements and varactor diodes, the synthesized line functions as a 1-bit phase shifter by switching its electrical length between two states; the characteristic impedance, meanwhile, is kept unaltered. The design concept, circuit model, and performance are carefully investigated and discussed. Based on newly developed synthesized line, a reconfigurable hybrid coupler, which can be electrically switched between a rat-race or branch-line coupler at the same frequency, is designed as a demonstration. The measured results showed acceptable insertion loss level and good output phase response.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"55 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120977643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/eumc.2017.8231034
Farzad Yazdani, R. Mansour
A novel, low loss, and highly reconfigurable matching network based on microelectromechanical system (MEMS) switches is proposed. MEMS switches are employed in an equivalent n-network to realize switchable short circuit stub terminations. The advantage of the proposed device is the minimal loading by MEMS switches in OFF states which results in delivering highly consistent performance over all configurations. The matching network is capable of matching varying impedances on both input and output terminals. Empirical design procedure and requirements for the proposed network is presented and the simulations and measurements for a prototype design are in close agreement.
{"title":"Realizing reconfigurable stub impedance matching networks using MEMS switches","authors":"Farzad Yazdani, R. Mansour","doi":"10.23919/eumc.2017.8231034","DOIUrl":"https://doi.org/10.23919/eumc.2017.8231034","url":null,"abstract":"A novel, low loss, and highly reconfigurable matching network based on microelectromechanical system (MEMS) switches is proposed. MEMS switches are employed in an equivalent n-network to realize switchable short circuit stub terminations. The advantage of the proposed device is the minimal loading by MEMS switches in OFF states which results in delivering highly consistent performance over all configurations. The matching network is capable of matching varying impedances on both input and output terminals. Empirical design procedure and requirements for the proposed network is presented and the simulations and measurements for a prototype design are in close agreement.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"129 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133685164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/eumic.2017.8230725
Graciele Batistell, Timo Holzmann, S. Leuschner, A. Wolter, A. Passamani, J. Sturm
This work proposes the improvement of the RF transceiver front-end based on the integration of passive components using modern SiP technologies. The investigation of two passive impedance matching networks for a SCPA are presented as low-cost high-performance alternatives for a 28 nm CMOS Matching Network (MN). The design was validated by FEM simulations and implemented for the first case in 130 nm SOI technology, and for the second case in 3-layer core-less package technology. The SOI implementation provides a peak output power of 16 dBm, presents an Insertion Loss (IL) of 2dB. The package implementation provides a peak output power of 19 dBm and an IL of 0.6 dB. Measurement results show that the Silicon-on-Insulator (SOI) implementation offers in a Switched Capacitor Power Amplifier (SCPA) peak efficiency of 18% while the implementation with in-package matching network offers a peak efficiency 38 %.
{"title":"SiP solutions for wireless transceiver impedance matching networks","authors":"Graciele Batistell, Timo Holzmann, S. Leuschner, A. Wolter, A. Passamani, J. Sturm","doi":"10.23919/eumic.2017.8230725","DOIUrl":"https://doi.org/10.23919/eumic.2017.8230725","url":null,"abstract":"This work proposes the improvement of the RF transceiver front-end based on the integration of passive components using modern SiP technologies. The investigation of two passive impedance matching networks for a SCPA are presented as low-cost high-performance alternatives for a 28 nm CMOS Matching Network (MN). The design was validated by FEM simulations and implemented for the first case in 130 nm SOI technology, and for the second case in 3-layer core-less package technology. The SOI implementation provides a peak output power of 16 dBm, presents an Insertion Loss (IL) of 2dB. The package implementation provides a peak output power of 19 dBm and an IL of 0.6 dB. Measurement results show that the Silicon-on-Insulator (SOI) implementation offers in a Switched Capacitor Power Amplifier (SCPA) peak efficiency of 18% while the implementation with in-package matching network offers a peak efficiency 38 %.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"475 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115871894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/eumc.2017.8231043
B. Ahmadi, A. Banai
A novel substrate-less oscillator module realized by gap waveguide technology is proposed in Ka band. No substrate is used in the RF section of the implemented oscillator and the whole structure is made by machining a piece of metal. The oscillator was made of three pieces and was assembled easily without needing a precise contact between them. Active device and the resonator of the oscillator are stacked in different layers. The fabricated oscillator module is self-packaged and doesn't need any packaging. It is shown that simulated and measured results are in good agreements. This paper is a step forward to shows the capability of the gap waveguide technology for implementing the whole RF front-end in microwave and millimeter wave systems.
{"title":"Substrate-less oscillator module realized by gap waveguide technology for millimeter wave applications","authors":"B. Ahmadi, A. Banai","doi":"10.23919/eumc.2017.8231043","DOIUrl":"https://doi.org/10.23919/eumc.2017.8231043","url":null,"abstract":"A novel substrate-less oscillator module realized by gap waveguide technology is proposed in Ka band. No substrate is used in the RF section of the implemented oscillator and the whole structure is made by machining a piece of metal. The oscillator was made of three pieces and was assembled easily without needing a precise contact between them. Active device and the resonator of the oscillator are stacked in different layers. The fabricated oscillator module is self-packaged and doesn't need any packaging. It is shown that simulated and measured results are in good agreements. This paper is a step forward to shows the capability of the gap waveguide technology for implementing the whole RF front-end in microwave and millimeter wave systems.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114164727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/eumc.2017.8231030
D. Cuenca, J. Hesselbarth, G. Alavi
A new method for coupling from an on-chip microstrip line to a rectangular waveguide oriented perpendicular to the chip is presented. The coupling is realized by a 3-pole bandpass structure, containing an on-chip microstrip resonator, a dielectric spherical resonator and a waveguide cavity resonator. Measurements show a transition loss of 2.6 dB at 64 GHz and less than 3 dB loss over a 4.5% bandwidth. Simulations indicate that less than 0.2 dB of this loss are due to radiation leakage. The structure occupies small on-chip area und provides features for electrical test before assembly and for simple yet precise assembly.
{"title":"Low-loss mm-wave transition from on-chip microstrip to rectangular waveguide","authors":"D. Cuenca, J. Hesselbarth, G. Alavi","doi":"10.23919/eumc.2017.8231030","DOIUrl":"https://doi.org/10.23919/eumc.2017.8231030","url":null,"abstract":"A new method for coupling from an on-chip microstrip line to a rectangular waveguide oriented perpendicular to the chip is presented. The coupling is realized by a 3-pole bandpass structure, containing an on-chip microstrip resonator, a dielectric spherical resonator and a waveguide cavity resonator. Measurements show a transition loss of 2.6 dB at 64 GHz and less than 3 dB loss over a 4.5% bandwidth. Simulations indicate that less than 0.2 dB of this loss are due to radiation leakage. The structure occupies small on-chip area und provides features for electrical test before assembly and for simple yet precise assembly.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129589404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/eumic.2017.8230736
J. Qayyum, M. Abt, Aljoscha Roch, A. Ulusoy, J. Papapolymerou
In this paper, the authors present proof of concept 3D printed interconnects fabricated using aerosol jet printing (AJP) technology. A trapezoidal structure was 3D printed on Liquid Crystal Polymer (LCP) and Coplanar Waveguides (CPW) were printed on top of them to imitate mm-wave packaging. The printing was done using silver nanoparticle ink that acquired 40% conductivity of the bulk silver after sintering at 200 °C for one hour. Scattering Parameters (S-parameters) were simulated and measured from 1 GHz to 110 GHz. The CPW interconnects yielded insertion loss of as low as 0.49 dB/mm including the trapezoid, and with a loss of 0.38 dB/mm on LCP substrate at 110 GHz. This work represents AJP as a solution for cost-effective system-on-package (SoP)/ millimeter-wave (mm-wave) systems.
{"title":"Ultra wideband 3D interconnects using aerosol jet printing up to 110 GHz","authors":"J. Qayyum, M. Abt, Aljoscha Roch, A. Ulusoy, J. Papapolymerou","doi":"10.23919/eumic.2017.8230736","DOIUrl":"https://doi.org/10.23919/eumic.2017.8230736","url":null,"abstract":"In this paper, the authors present proof of concept 3D printed interconnects fabricated using aerosol jet printing (AJP) technology. A trapezoidal structure was 3D printed on Liquid Crystal Polymer (LCP) and Coplanar Waveguides (CPW) were printed on top of them to imitate mm-wave packaging. The printing was done using silver nanoparticle ink that acquired 40% conductivity of the bulk silver after sintering at 200 °C for one hour. Scattering Parameters (S-parameters) were simulated and measured from 1 GHz to 110 GHz. The CPW interconnects yielded insertion loss of as low as 0.49 dB/mm including the trapezoid, and with a loss of 0.38 dB/mm on LCP substrate at 110 GHz. This work represents AJP as a solution for cost-effective system-on-package (SoP)/ millimeter-wave (mm-wave) systems.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115687277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/eumc.2017.8231021
Muhammad Abdullah Khan, R. Negra
In this paper, we present an 880 MHz common-drain power amplifier (CDPA) in 130 nm CMOS technology. New PA topologies are required to address the issues of linearity, reliability, and efficiency. The CDPA is one such promising topology. Owing to the inherent feedback nature of a CDPA, the output voltage is a replica of input voltage, thus making the CDPA a highly linear amplifier with good efficiency. Secondly, the voltage following property results in significant reduction of the voltage-stress at the device input and output terminals. Small-signal measurement results show a gain of 10.5 dB with Sn less than −10 dB. Large-signal measurement results indicate that the designed CDPA achieves an output 1-dB compression point of 27.9 dBm with an associated 1-dB power added efficiency of 31.9 %. The amplifier saturates at 28.5dBm. The total die area of the amplifier is 0.76 mm 2 including pads. The amplifier is tested at compression point for a duration of 10 hours with average deviation of 0.15 dB in gain, thus indicating a reliable operation.
本文设计了一种采用130 nm CMOS技术的880 MHz共漏功率放大器(CDPA)。需要新的PA拓扑来解决线性、可靠性和效率问题。CDPA就是这样一个很有前途的拓扑结构。由于CDPA固有的反馈特性，输出电压是输入电压的复制品，从而使CDPA成为一个具有良好效率的高度线性放大器。其次，电压随动特性显著降低了器件输入和输出端的电压应力。小信号测量结果表明，当Sn小于−10 dB时，增益为10.5 dB。大信号测量结果表明，所设计的CDPA输出1db压缩点为27.9 dBm，相应的1db功率增加效率为31.9%。放大器在28.5dBm处达到饱和。包括焊盘在内，放大器的总模面积为0.76 mm 2。在压缩点对放大器进行了持续10小时的测试，增益平均偏差为0.15 dB，从而表明运行可靠。
{"title":"Common-drain CMOS power amplifier: An alternative power amplifier","authors":"Muhammad Abdullah Khan, R. Negra","doi":"10.23919/eumc.2017.8231021","DOIUrl":"https://doi.org/10.23919/eumc.2017.8231021","url":null,"abstract":"In this paper, we present an 880 MHz common-drain power amplifier (CDPA) in 130 nm CMOS technology. New PA topologies are required to address the issues of linearity, reliability, and efficiency. The CDPA is one such promising topology. Owing to the inherent feedback nature of a CDPA, the output voltage is a replica of input voltage, thus making the CDPA a highly linear amplifier with good efficiency. Secondly, the voltage following property results in significant reduction of the voltage-stress at the device input and output terminals. Small-signal measurement results show a gain of 10.5 dB with Sn less than −10 dB. Large-signal measurement results indicate that the designed CDPA achieves an output 1-dB compression point of 27.9 dBm with an associated 1-dB power added efficiency of 31.9 %. The amplifier saturates at 28.5dBm. The total die area of the amplifier is 0.76 mm 2 including pads. The amplifier is tested at compression point for a duration of 10 hours with average deviation of 0.15 dB in gain, thus indicating a reliable operation.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132624129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/eumic.2017.8230744
Yuh-Jing Hwang, Chau-Ching Chiong, Yau-De Huang, Chi-Den Huang, C. Liu, Fang-Chia Hsieh, Yen-Hsiang Tseng, P. Chiang, Chih-Cheng Chang, Chin-Ting Ho, Shou-Ting Jian, Chien-Feng Lee, Yi-Wei Lee, Álvaro González, J. Effland, K. Saini, M. Pospieszalski, R. Finger, V. Tapia, N. Reyes
The Band-1 receiver front-end cartridges for Atacama Large Millimeter Array, which covered 35–50 GHz frequency range, are now in preproduction stage. For the first three preproduction cartridges, the measured receiver noise temperature is less than 16–31K for any combination of the inband RF and LO frequencies. The measured gain flatness, even with the limitation of the optical window of the cryostat and the broadband matching of the cryogenic amplifiers, is typically lower than 5 dB over any 2GHz window. Extracted aperture beam efficiency is typically higher than 80% over the full frequency range. The crosstalk over the orthogonal channel is lower than −63 dB. For the suppression of the unwanted lower sideband, the imaged band suppression is higher than 20 dB for the worst case and around 30 dB typically.
{"title":"Performance of the first three preproduction 35–50 GHz receiver front-ends for atacama large millimeter / submillimeter array","authors":"Yuh-Jing Hwang, Chau-Ching Chiong, Yau-De Huang, Chi-Den Huang, C. Liu, Fang-Chia Hsieh, Yen-Hsiang Tseng, P. Chiang, Chih-Cheng Chang, Chin-Ting Ho, Shou-Ting Jian, Chien-Feng Lee, Yi-Wei Lee, Álvaro González, J. Effland, K. Saini, M. Pospieszalski, R. Finger, V. Tapia, N. Reyes","doi":"10.23919/eumic.2017.8230744","DOIUrl":"https://doi.org/10.23919/eumic.2017.8230744","url":null,"abstract":"The Band-1 receiver front-end cartridges for Atacama Large Millimeter Array, which covered 35–50 GHz frequency range, are now in preproduction stage. For the first three preproduction cartridges, the measured receiver noise temperature is less than 16–31K for any combination of the inband RF and LO frequencies. The measured gain flatness, even with the limitation of the optical window of the cryostat and the broadband matching of the cryogenic amplifiers, is typically lower than 5 dB over any 2GHz window. Extracted aperture beam efficiency is typically higher than 80% over the full frequency range. The crosstalk over the orthogonal channel is lower than −63 dB. For the suppression of the unwanted lower sideband, the imaged band suppression is higher than 20 dB for the worst case and around 30 dB typically.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130820266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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