Pub Date : 2017-10-01DOI: 10.23919/EUMC.2017.8231022
Fabien Mesquita, E. Kerhervé, A. Ghiotto, Y. Creveuil, M. Regis
This paper reports for the first time a power amplifier (PA) based on the recently proposed MASMOS® transistor. This PA complies with the long-term evolution (LTE) power level requirements while offering a high efficiency. The MASMOS® transistor, available in low-cost 180-nm standard CMOS process, provides a higher breakdown voltage compared to conventional CMOS transistors. Therefore, the MASMOS® transistor is of high interest as it is able to generate a Watt-level output power with high efficiency in the highest LTE-bands. A reconfigurable power cell, implementing resizable MASMOS® transistors and offering a discrete control of both the output power and the dc consumption is introduced. Based on this reconfigurable cell, a two-stage PA is designed. This PA exhibits a measured 30.2 dBm output power at 2.5 GHz with a gain and power-added efficiency (PAE) of 21.8 dB and 54% respectively.
{"title":"High-efficiency watt-level MASMOS® power amplifier for LTE applications","authors":"Fabien Mesquita, E. Kerhervé, A. Ghiotto, Y. Creveuil, M. Regis","doi":"10.23919/EUMC.2017.8231022","DOIUrl":"https://doi.org/10.23919/EUMC.2017.8231022","url":null,"abstract":"This paper reports for the first time a power amplifier (PA) based on the recently proposed MASMOS® transistor. This PA complies with the long-term evolution (LTE) power level requirements while offering a high efficiency. The MASMOS® transistor, available in low-cost 180-nm standard CMOS process, provides a higher breakdown voltage compared to conventional CMOS transistors. Therefore, the MASMOS® transistor is of high interest as it is able to generate a Watt-level output power with high efficiency in the highest LTE-bands. A reconfigurable power cell, implementing resizable MASMOS® transistors and offering a discrete control of both the output power and the dc consumption is introduced. Based on this reconfigurable cell, a two-stage PA is designed. This PA exhibits a measured 30.2 dBm output power at 2.5 GHz with a gain and power-added efficiency (PAE) of 21.8 dB and 54% respectively.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114156213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230666
A. Niembro-Martin, D. Mercier, H. Sibuet, B. Dieppedale, C. Baret, C. Bonnard, C. Billard, P. Gardes, P. Poveda
This paper presents an analysis of a thin film dielectric characterization method based on the impedance difference of two circular capacitors. For the first time, an error study is detailed in order to define what the best case to use the method is. To illustrate the study, the method has been applied for two dielectrics with extremely different RF properties: silicon nitride (low permittivity and low loss tangent) and Barium Calcium Zirconate Titanate (very high permittivity and high loss tangent).
{"title":"Analysis of a thin film dielectric characterization method based on the impedance difference of two MIM capacitors","authors":"A. Niembro-Martin, D. Mercier, H. Sibuet, B. Dieppedale, C. Baret, C. Bonnard, C. Billard, P. Gardes, P. Poveda","doi":"10.23919/EUMIC.2017.8230666","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230666","url":null,"abstract":"This paper presents an analysis of a thin film dielectric characterization method based on the impedance difference of two circular capacitors. For the first time, an error study is detailed in order to define what the best case to use the method is. To illustrate the study, the method has been applied for two dielectrics with extremely different RF properties: silicon nitride (low permittivity and low loss tangent) and Barium Calcium Zirconate Titanate (very high permittivity and high loss tangent).","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128277386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMC.2017.8231032
A. Barigelli, F. Diaferia, P. Panfili, M. Scipioni, F. Vitulli, A. Biondi, D. Resca, F. Scappaviva, G. Nicolai, D. Di Gregorio
An advanced Ka-band (27.5–30 GHz) Solid State Switch Matrix, based on a high order scalability concept and high integration level has been developed under a Contract with the European Space Agency (ESA) for application in satellite communication. A 4×4 module demonstrator has been designed, manufactured and tested, as a building block of switch matrix scalable to very high order, up to 32 inputs × 32 outputs and more. The end goal is to prove the feasibility of an advanced highly integrated, low mass and cost effective Switch Matrix for use in future Ka-band multi-beam payloads for application either in low level redundancy rings or in flexible on-board channel to beam connectivity.
{"title":"Scalable Ka band switch matrix in compact LTCC package for satellite communication application","authors":"A. Barigelli, F. Diaferia, P. Panfili, M. Scipioni, F. Vitulli, A. Biondi, D. Resca, F. Scappaviva, G. Nicolai, D. Di Gregorio","doi":"10.23919/EUMC.2017.8231032","DOIUrl":"https://doi.org/10.23919/EUMC.2017.8231032","url":null,"abstract":"An advanced Ka-band (27.5–30 GHz) Solid State Switch Matrix, based on a high order scalability concept and high integration level has been developed under a Contract with the European Space Agency (ESA) for application in satellite communication. A 4×4 module demonstrator has been designed, manufactured and tested, as a building block of switch matrix scalable to very high order, up to 32 inputs × 32 outputs and more. The end goal is to prove the feasibility of an advanced highly integrated, low mass and cost effective Switch Matrix for use in future Ka-band multi-beam payloads for application either in low level redundancy rings or in flexible on-board channel to beam connectivity.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133273186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230657
M. Dietz, T. Girg, A. Bauch, K. Aufinger, A. Hagelauer, D. Kissinger, R. Weigel
For monolithically integrated vector network analyzers (VNA) a broadband multi-octave receiver is shown, which exhibit a very wide frequency range from 1–32 GHz. It consists out of a low noise amplifier (LNA) and an active mixer, followed by an output buffer. With the presented design, a maximum achievable conversion gain (CG) of 16.6 dBm can be reached. The main design-goal is a very flat deviation of the conversion gain over five octaves, which eases calibration of the VNA. To realize variable gain functionality, without losing much input matching, special attention is spent to the design and topology of a new extended gain-control circuit (VGC) is shown. A second VGC is implemented in the output buffer, to improve isolation for deactivated channels of the VNA. All bandwidth extension techniques will be explained in detail and flesh out by simulations. Furthermore, a matching lower than −10 dB is achieved between 1 GHz and 28 GHz. The noise figure NFdsb of the broadband receiver is between 4.6 and 5.8 dB for 4–32 GHz and the output-referred 1-dB-compression-point of 0.1–4.3 dBm from 2–32 GHz. The current consumption at a supply voltage of 3.3 V has a value of 66 mA.
{"title":"Broadband multi-octave receiver from 1–32 GHz for monolithic integrated vector network analyzers (VNA) in SiGe-technology","authors":"M. Dietz, T. Girg, A. Bauch, K. Aufinger, A. Hagelauer, D. Kissinger, R. Weigel","doi":"10.23919/EUMIC.2017.8230657","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230657","url":null,"abstract":"For monolithically integrated vector network analyzers (VNA) a broadband multi-octave receiver is shown, which exhibit a very wide frequency range from 1–32 GHz. It consists out of a low noise amplifier (LNA) and an active mixer, followed by an output buffer. With the presented design, a maximum achievable conversion gain (CG) of 16.6 dBm can be reached. The main design-goal is a very flat deviation of the conversion gain over five octaves, which eases calibration of the VNA. To realize variable gain functionality, without losing much input matching, special attention is spent to the design and topology of a new extended gain-control circuit (VGC) is shown. A second VGC is implemented in the output buffer, to improve isolation for deactivated channels of the VNA. All bandwidth extension techniques will be explained in detail and flesh out by simulations. Furthermore, a matching lower than −10 dB is achieved between 1 GHz and 28 GHz. The noise figure NFdsb of the broadband receiver is between 4.6 and 5.8 dB for 4–32 GHz and the output-referred 1-dB-compression-point of 0.1–4.3 dBm from 2–32 GHz. The current consumption at a supply voltage of 3.3 V has a value of 66 mA.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129463205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230679
S. Thomas, B. Welp, N. Pohl
In this paper an ultra high bandwidth signal generation MMIC is presented. Based on an fundamental oscillator working at 75 GHz followed by a two stage frequency quadrupler, an output frequency range from 231.2–309.1 GHz is achieved, resulting in an overall tuning range of almost 78 GHz. The maximum output power of the transmitter MMIC is −2.8 dBm with a power variation of 7.5 dB over the complete 78 GHz tuning range. In combination with a low phase noise of approx. −75 dBc/Hz @ 1 MHz offset of the 300 GHz output signal, various high resolution distance measurements or imaging applications especially in the field of industrial quality assurance or in-line process monitoring become possible. With a power consumption of the complete MMIC of 700 mW at a single supply voltage of 5 V the realization of low-power sensors for industrial use can be achieved. The use of the well-established B11HFC SiGe BiCMOS technology provided by Infineon Technologies AG allows a reliable and cost-effective production as well.
{"title":"Ultra-wideband signal generation at 300 GHz in a SiGe BiCMOS technology","authors":"S. Thomas, B. Welp, N. Pohl","doi":"10.23919/EUMIC.2017.8230679","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230679","url":null,"abstract":"In this paper an ultra high bandwidth signal generation MMIC is presented. Based on an fundamental oscillator working at 75 GHz followed by a two stage frequency quadrupler, an output frequency range from 231.2–309.1 GHz is achieved, resulting in an overall tuning range of almost 78 GHz. The maximum output power of the transmitter MMIC is −2.8 dBm with a power variation of 7.5 dB over the complete 78 GHz tuning range. In combination with a low phase noise of approx. −75 dBc/Hz @ 1 MHz offset of the 300 GHz output signal, various high resolution distance measurements or imaging applications especially in the field of industrial quality assurance or in-line process monitoring become possible. With a power consumption of the complete MMIC of 700 mW at a single supply voltage of 5 V the realization of low-power sensors for industrial use can be achieved. The use of the well-established B11HFC SiGe BiCMOS technology provided by Infineon Technologies AG allows a reliable and cost-effective production as well.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132794248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230698
B. Pichler, N. Leder, G. Magerl, H. Arthaber
Models for active devices operating in a nonlinear regime are an indispensable tool for modern RF-circuit design. A popular class of large signal models are X-parameters which offer an accurate description of nonlinear devices. However, they require a specialized measurement setup. Typically nonlinear vector network analyzers (NVNA), are used to conduct the measurements required for an X-parameter model. In their standard configuration, these instruments cannot cope with the high power levels and typical impedances demanded by practically relevant nonlinear devices. So the test-set of an NVNA must be adapted, and tuners have to be added to manipulate the load condition. However, these additional components also add imperfections. This work elaborates how undesired port-mismatch induced by the tuners, and the resulting imperfect stimuli, as well as the corresponding systematic errors in the parameter extraction can be tackled. It explains how the imperfect stimuli can be characterized alongside standard measurements, which allows to correct systematic errors in the parameter extraction. Finally, this work compares the accuracy of this correction for a nonlinear circuit model as well as for a measured device.
{"title":"Load error correction for high power load dependent X-parameter measurements","authors":"B. Pichler, N. Leder, G. Magerl, H. Arthaber","doi":"10.23919/EUMIC.2017.8230698","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230698","url":null,"abstract":"Models for active devices operating in a nonlinear regime are an indispensable tool for modern RF-circuit design. A popular class of large signal models are X-parameters which offer an accurate description of nonlinear devices. However, they require a specialized measurement setup. Typically nonlinear vector network analyzers (NVNA), are used to conduct the measurements required for an X-parameter model. In their standard configuration, these instruments cannot cope with the high power levels and typical impedances demanded by practically relevant nonlinear devices. So the test-set of an NVNA must be adapted, and tuners have to be added to manipulate the load condition. However, these additional components also add imperfections. This work elaborates how undesired port-mismatch induced by the tuners, and the resulting imperfect stimuli, as well as the corresponding systematic errors in the parameter extraction can be tackled. It explains how the imperfect stimuli can be characterized alongside standard measurements, which allows to correct systematic errors in the parameter extraction. Finally, this work compares the accuracy of this correction for a nonlinear circuit model as well as for a measured device.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123753397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/eumic.2017.8230713
M. Bao, Z. He, H. Zirath
A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is designed and measured. This PA has an output power of 12.5–15.5 dBm in a frequency range from 100 GHz to 145 GHz, when the input power is about 2 dBm. The small signal gain is 19 dB and the maximum DC power consumption is 480 mW with a supply voltage of 1.87 V. The peak power added efficiency (PAE) is 6.4% in D-band. T-junctions are utilized to combine and divide millimeter-wave power. To reduce the PA's loss and chip area, neither a Wilkinson power combiner/divider nor a balun is applied. The chip size is 0.53 mm2 (0.26 mm2 without pads).
{"title":"A 100–145 GHz area-efficient power amplifier in a 130 nm SiGe technology","authors":"M. Bao, Z. He, H. Zirath","doi":"10.23919/eumic.2017.8230713","DOIUrl":"https://doi.org/10.23919/eumic.2017.8230713","url":null,"abstract":"A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is designed and measured. This PA has an output power of 12.5–15.5 dBm in a frequency range from 100 GHz to 145 GHz, when the input power is about 2 dBm. The small signal gain is 19 dB and the maximum DC power consumption is 480 mW with a supply voltage of 1.87 V. The peak power added efficiency (PAE) is 6.4% in D-band. T-junctions are utilized to combine and divide millimeter-wave power. To reduce the PA's loss and chip area, neither a Wilkinson power combiner/divider nor a balun is applied. The chip size is 0.53 mm2 (0.26 mm2 without pads).","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128349629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230664
J. Moody, Pouyan Bassirian, Abhishek Roy, Yukang Feng, Shuo Li, R. Costanzo, N. S. Barker, B. Calhoun, S. Bowers
This work presents an ultra-low power event driven wake-up receiver (WuRx) fabricated in a RF CMOS 130 nm process. The receiver consists of an off-chip lumped element matching network, an envelope detector, a decision circuit capable of detecting sub-mV baseband signal voltages and a clock source consuming 1.3 nW. This receiver has demonstrated a sensitivity of −72 dBm while consuming a total of 8.3 nW from 1 V and 0.65 V sources.
{"title":"An 8.3 nW −72 dBm event driven IoE wake up receiver RF front end","authors":"J. Moody, Pouyan Bassirian, Abhishek Roy, Yukang Feng, Shuo Li, R. Costanzo, N. S. Barker, B. Calhoun, S. Bowers","doi":"10.23919/EUMIC.2017.8230664","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230664","url":null,"abstract":"This work presents an ultra-low power event driven wake-up receiver (WuRx) fabricated in a RF CMOS 130 nm process. The receiver consists of an off-chip lumped element matching network, an envelope detector, a decision circuit capable of detecting sub-mV baseband signal voltages and a clock source consuming 1.3 nW. This receiver has demonstrated a sensitivity of −72 dBm while consuming a total of 8.3 nW from 1 V and 0.65 V sources.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122904869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230684
V. Knopik, B. Moret, E. Kerhervé
Hybrid is a key component in RF and Microwave design, and particularly for balanced power amplifier (PA). This paper describes a pragmatic approach of the quadrature hybrid component design, aligned with measurements. It considers the cell as a combination of 2 simple elements rather than X/4 lines. The hybrid becomes scalable to reach a given frequency, and can be optimized by adding simple small twisted cells. The main advantages are to keep the two input (or output) blocks perfectly in parallel, and to consider the distance between the two blocks as a first dimension parameter. The component can also be tunable over frequency. The form factor is rectangular, using 2 metal layers at least and can be easily integrated in silicon technologies. The typical insertion loss is below 0.7dB in H9SOIFEM at 5.85GHz and 14GHz, while tunability can extend the frequency by more than 25% at 28GHz in 28FDSOI.
{"title":"Integrated scalable and tunable RF CMOS SOI quadrature hybrid coupler","authors":"V. Knopik, B. Moret, E. Kerhervé","doi":"10.23919/EUMIC.2017.8230684","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230684","url":null,"abstract":"Hybrid is a key component in RF and Microwave design, and particularly for balanced power amplifier (PA). This paper describes a pragmatic approach of the quadrature hybrid component design, aligned with measurements. It considers the cell as a combination of 2 simple elements rather than X/4 lines. The hybrid becomes scalable to reach a given frequency, and can be optimized by adding simple small twisted cells. The main advantages are to keep the two input (or output) blocks perfectly in parallel, and to consider the distance between the two blocks as a first dimension parameter. The component can also be tunable over frequency. The form factor is rectangular, using 2 metal layers at least and can be easily integrated in silicon technologies. The typical insertion loss is below 0.7dB in H9SOIFEM at 5.85GHz and 14GHz, while tunability can extend the frequency by more than 25% at 28GHz in 28FDSOI.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115741214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230656
G. Maiellaro, G. Alessi, A. Bruno, A. Calcagno, N. Micalizzi, A. Di Mauro, E. Susino, A. Scuderi, S. Scaccianoce
This paper presents a 24-GHz transceiver with power envelope digital control for automotive radar sensor applications. The transceiver features three I/Q low-noise receivers, an on-chip voltage-controlled oscillator, frequency divider and an amplification chain delivering 13-dBm output power from a 3.3-V supply voltage. The power digital circuit controls both the RF power on/off transitions and the output power duration in order to comply with emission mask, maximizing the usage of operating bandwidth. According to its features, this transceiver can be used in short- and medium-range automotive radar systems with fast-chirp modulation.
{"title":"A 24-GHz transceiver with RF power envelope digital control for automotive radar ICs","authors":"G. Maiellaro, G. Alessi, A. Bruno, A. Calcagno, N. Micalizzi, A. Di Mauro, E. Susino, A. Scuderi, S. Scaccianoce","doi":"10.23919/EUMIC.2017.8230656","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230656","url":null,"abstract":"This paper presents a 24-GHz transceiver with power envelope digital control for automotive radar sensor applications. The transceiver features three I/Q low-noise receivers, an on-chip voltage-controlled oscillator, frequency divider and an amplification chain delivering 13-dBm output power from a 3.3-V supply voltage. The power digital circuit controls both the RF power on/off transitions and the output power duration in order to comply with emission mask, maximizing the usage of operating bandwidth. According to its features, this transceiver can be used in short- and medium-range automotive radar systems with fast-chirp modulation.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114069199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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