Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230685
C. Coen, Adrian Ildefonso, Zachary E. Fleetwood, J. Cressler
This paper presents the design, optimization, and characterization of a square-law power detector for heterodyne millimeter-wave radiometers implemented using 0.13 μm SiGe HBTs. A 3-dB bandwidth of 19–34 GHz (56% fractional bandwidth) is obtained through the use of inductively degenerated SiGe HBTs with large emitter lengths. The detector achieves a minimum noise-equivalent power (NEP) of 0.49 pW/VHz at 24 GHz with a peak responsivity of 17.1 kV/W. Through careful transistor biasing and judicious use of resistors, the detector achieves a measured 1/f noise corner frequency of 24 Hz when biased for optimal NEP. To the best of our knowledge, this detector achieves the widest fractional bandwidth and best 1/f noise performance of all tuned transistor-based square-law detectors for high-frequency radiometers to date.
{"title":"A 19–34 GHz SiGe HBT square-law detector with ultra-low 1/f noise for atmospheric radiometers","authors":"C. Coen, Adrian Ildefonso, Zachary E. Fleetwood, J. Cressler","doi":"10.23919/EUMIC.2017.8230685","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230685","url":null,"abstract":"This paper presents the design, optimization, and characterization of a square-law power detector for heterodyne millimeter-wave radiometers implemented using 0.13 μm SiGe HBTs. A 3-dB bandwidth of 19–34 GHz (56% fractional bandwidth) is obtained through the use of inductively degenerated SiGe HBTs with large emitter lengths. The detector achieves a minimum noise-equivalent power (NEP) of 0.49 pW/VHz at 24 GHz with a peak responsivity of 17.1 kV/W. Through careful transistor biasing and judicious use of resistors, the detector achieves a measured 1/f noise corner frequency of 24 Hz when biased for optimal NEP. To the best of our knowledge, this detector achieves the widest fractional bandwidth and best 1/f noise performance of all tuned transistor-based square-law detectors for high-frequency radiometers to date.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130660259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230694
F. van Raay, M. Ohlrogge, A. Leuther, D. Schwantuschke, M. Schlechtweg
A new large-signal FET model is proposed which simultaneously covers trapping, impact ionization, breakdown and thermal effects in an effective analytical channel current formulation. Drain current and charge functions are described using an integral transform of conductances and capacitances. An InAlAs/InGaAs mHEMT extraction example demonstrates a good simultaneous prediction of DC, small-signal and large-signal performance of the device in spite of different low-frequency dispersion effects which may be related to trapping and impact ionization effects in the device.
{"title":"HEMT large-signal integral transform model including trapping and impact ionization","authors":"F. van Raay, M. Ohlrogge, A. Leuther, D. Schwantuschke, M. Schlechtweg","doi":"10.23919/EUMIC.2017.8230694","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230694","url":null,"abstract":"A new large-signal FET model is proposed which simultaneously covers trapping, impact ionization, breakdown and thermal effects in an effective analytical channel current formulation. Drain current and charge functions are described using an integral transform of conductances and capacitances. An InAlAs/InGaAs mHEMT extraction example demonstrates a good simultaneous prediction of DC, small-signal and large-signal performance of the device in spite of different low-frequency dispersion effects which may be related to trapping and impact ionization effects in the device.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132945561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230705
Cristina Andrei, R. Doerner, S. Chevtchenko, W. Heinrich, M. Rudolph
GaN low-noise amplifiers need to provide low noise figure, but are also often expected to be highly rugged. This paper addresses the question, how HEMT devices within a certain technology can be optimized only by changing basic geometrical properties. While epitaxial layer structure and gate length usually are not accessible, the circuit designer might be able to choose parameters as gate finger width and gate-source spacing. In this analysis, GaN HEMT samples were fabricated, measured and modeled. The layout of the devices was varied in order to study possibilities to improve noise figure. It is shown that significant improvements in noise performance are to be expected by optimizing gate finger width, while the slight improvement in terms of noise figure resulting from a reduction in gate-source spacing compromises gate breakdown and should be avoided. This work provides the designer of low-noise amplifier MMICs with a qualitative analysis and quantitative examples of a state-of-the art GaN HEMT process how to optimize the layout of the HEMT for low-noise and highly rugged LNA design.
{"title":"On the optimization of GaN HEMT layout for highly rugged low-noise amplifier design","authors":"Cristina Andrei, R. Doerner, S. Chevtchenko, W. Heinrich, M. Rudolph","doi":"10.23919/EUMIC.2017.8230705","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230705","url":null,"abstract":"GaN low-noise amplifiers need to provide low noise figure, but are also often expected to be highly rugged. This paper addresses the question, how HEMT devices within a certain technology can be optimized only by changing basic geometrical properties. While epitaxial layer structure and gate length usually are not accessible, the circuit designer might be able to choose parameters as gate finger width and gate-source spacing. In this analysis, GaN HEMT samples were fabricated, measured and modeled. The layout of the devices was varied in order to study possibilities to improve noise figure. It is shown that significant improvements in noise performance are to be expected by optimizing gate finger width, while the slight improvement in terms of noise figure resulting from a reduction in gate-source spacing compromises gate breakdown and should be avoided. This work provides the designer of low-noise amplifier MMICs with a qualitative analysis and quantitative examples of a state-of-the art GaN HEMT process how to optimize the layout of the HEMT for low-noise and highly rugged LNA design.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134278147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230687
P. Sangaré, C. Loyez, K. Carpentier, Markus Mayer, Dirk Hartung, François Parickmiler, N. Rolland
This paper presents an innovative topology of an ultra-broadband BPSK modulator. This novel architecture consists of a specific distributed amplifier and absorptive switches, providing amplitude flatness and low phase imbalance over the 0.5–18 GHz frequency bandwidth. Experimental results validate the performance of such a modulator over more than a frequency decade.
{"title":"An ultra broadband 0.5–18 GHz BPSK modulator","authors":"P. Sangaré, C. Loyez, K. Carpentier, Markus Mayer, Dirk Hartung, François Parickmiler, N. Rolland","doi":"10.23919/EUMIC.2017.8230687","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230687","url":null,"abstract":"This paper presents an innovative topology of an ultra-broadband BPSK modulator. This novel architecture consists of a specific distributed amplifier and absorptive switches, providing amplitude flatness and low phase imbalance over the 0.5–18 GHz frequency bandwidth. Experimental results validate the performance of such a modulator over more than a frequency decade.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134366237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230706
G. Bosi, A. Raffo, V. Vadalà, Francesco Trevisan, G. Formicone, J. Burger, J. Custer, G. Vannini
In this paper, we present a measurement setup for characterizing high-voltage high-power microwave transistors in terms of their reliability under actual operating conditions. By operating in the megahertz range, one exploits important advantages as the use of low-cost instrumentation and the possibility of handling high voltages and high powers. Finally, the gathered data, which are consistent with RF operation, are used to evaluate the reliability of the technology-under-test. An example of stress measurements is provided for a 100-VDC GaN HEMT delivering an output power of 10 W.
在本文中，我们提出了一种测量装置来表征高压大功率微波晶体管在实际工作条件下的可靠性。通过在兆赫范围内工作，可以利用低成本仪器的使用以及处理高电压和高功率的可能性等重要优势。最后，收集到的数据与射频操作一致，用于评估待测技术的可靠性。提供了一个输出功率为10w的100 vdc GaN HEMT的应力测量示例。
{"title":"Evaluation of high-voltage transistor reliability under nonlinear dynamic operation","authors":"G. Bosi, A. Raffo, V. Vadalà, Francesco Trevisan, G. Formicone, J. Burger, J. Custer, G. Vannini","doi":"10.23919/EUMIC.2017.8230706","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230706","url":null,"abstract":"In this paper, we present a measurement setup for characterizing high-voltage high-power microwave transistors in terms of their reliability under actual operating conditions. By operating in the megahertz range, one exploits important advantages as the use of low-cost instrumentation and the possibility of handling high voltages and high powers. Finally, the gathered data, which are consistent with RF operation, are used to evaluate the reliability of the technology-under-test. An example of stress measurements is provided for a 100-VDC GaN HEMT delivering an output power of 10 W.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114475917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230659
H. Matsumura, Yohei Yagishita, I. Soga, K. Oishi, Y. Kawano, Y. Nakasha, T. Iwai
This paper presents a quadrature pulse-position modulation (Q-PPM) impulse radio (IR) system, and its novel transceiver architecture for E-band wireless communications. In the Q-PPM IR system, the wavelet of the transmitted signal is time-shifted by multiples of 3 ps from the periodic base position. This paper focuses on the receiver architecture for demodulation of the Q-PPM IR signal. The principle and a detailed analysis of the demodulation scheme are described. The integrated receiver chip was developed in 55-nm CMOS technology. It includes all circuit blocks based on the proposed demodulation architecture, which consists of an in-phase/quadrature (IQ) demodulator, a symbol clock recovery circuit, and a local impulse generator. A measured conversion gain of about 4 dB in the 81–86-GHz frequency band is achieved.
{"title":"80-GHz impulse radio receiver with quadrature PPM demodulation in 55-nm CMOS technology","authors":"H. Matsumura, Yohei Yagishita, I. Soga, K. Oishi, Y. Kawano, Y. Nakasha, T. Iwai","doi":"10.23919/EUMIC.2017.8230659","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230659","url":null,"abstract":"This paper presents a quadrature pulse-position modulation (Q-PPM) impulse radio (IR) system, and its novel transceiver architecture for E-band wireless communications. In the Q-PPM IR system, the wavelet of the transmitted signal is time-shifted by multiples of 3 ps from the periodic base position. This paper focuses on the receiver architecture for demodulation of the Q-PPM IR signal. The principle and a detailed analysis of the demodulation scheme are described. The integrated receiver chip was developed in 55-nm CMOS technology. It includes all circuit blocks based on the proposed demodulation architecture, which consists of an in-phase/quadrature (IQ) demodulator, a symbol clock recovery circuit, and a local impulse generator. A measured conversion gain of about 4 dB in the 81–86-GHz frequency band is achieved.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134153516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230697
D. Root, J. Verspecht, Jianjun Xu
A powerful new technique is presented and used to derive compact closed-form expressions for the optimum output reflection coefficient for maximum power transfer to the load of a PA under large-signal input drive. Wirtinger calculus is applied to a non-analytic X-parameter expression to formulate the extremal problem in a form that can be solved exactly, by hand, in explicit form. Compact formulas for the exact solution are valid for small and large input drive levels and small-to-moderate output mismatch, and reduce to the well-known S-parameter result in the small-signal limit. The results are validated numerically and against measured load-pull data on a commercial power amplifier. The method enables a fast, prescriptive, X-parameter based production test for a key large-signal PA figure of merit, beyond what is possible from S-parameters, and without the need for searching the measured performance space.
{"title":"Closed-form solutions to large-signal PA problems: Wirtinger calculus applied to X-parameter","authors":"D. Root, J. Verspecht, Jianjun Xu","doi":"10.23919/EUMIC.2017.8230697","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230697","url":null,"abstract":"A powerful new technique is presented and used to derive compact closed-form expressions for the optimum output reflection coefficient for maximum power transfer to the load of a PA under large-signal input drive. Wirtinger calculus is applied to a non-analytic X-parameter expression to formulate the extremal problem in a form that can be solved exactly, by hand, in explicit form. Compact formulas for the exact solution are valid for small and large input drive levels and small-to-moderate output mismatch, and reduce to the well-known S-parameter result in the small-signal limit. The results are validated numerically and against measured load-pull data on a commercial power amplifier. The method enables a fast, prescriptive, X-parameter based production test for a key large-signal PA figure of merit, beyond what is possible from S-parameters, and without the need for searching the measured performance space.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124681899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230661
Hatem Ghaleb, M. El-Shennawy, C. Carta, F. Ellinger
This paper presents a regenerative sampling oscillator for the simultaneous regeneration of phase and amplitude, which enables highly efficient QAM schemes in the mm-wave range to reach multi-Gb/s data rates. A nonlinear model is derived to study the phase regeneration and the startup behavior of the oscillator and is simulated in CADENCE. A cross-coupled circuit is fabricated in a 0.13-μm SiGe BiCMOS technology with an oscillation frequency of 147.6 GHz, which is higher than any published regenerative oscillator capable of phase regeneration to date. It achieves a regenerative gain of 36 dB and a free-running output power of −6 dBm with only 48 mW dc power including buffers. This provides a viable solution to the problem of high-frequency gain without compromising the dc power consumption.
{"title":"A 148-GHz regenerative sampling oscillator","authors":"Hatem Ghaleb, M. El-Shennawy, C. Carta, F. Ellinger","doi":"10.23919/EUMIC.2017.8230661","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230661","url":null,"abstract":"This paper presents a regenerative sampling oscillator for the simultaneous regeneration of phase and amplitude, which enables highly efficient QAM schemes in the mm-wave range to reach multi-Gb/s data rates. A nonlinear model is derived to study the phase regeneration and the startup behavior of the oscillator and is simulated in CADENCE. A cross-coupled circuit is fabricated in a 0.13-μm SiGe BiCMOS technology with an oscillation frequency of 147.6 GHz, which is higher than any published regenerative oscillator capable of phase regeneration to date. It achieves a regenerative gain of 36 dB and a free-running output power of −6 dBm with only 48 mW dc power including buffers. This provides a viable solution to the problem of high-frequency gain without compromising the dc power consumption.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129095060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230646
Paul Stärke, D. Fritsche, C. Carta, F. Ellinger
This work presents a low noise amplifier with variable gain, large bandwidth and a tunable output matching network fabricated in a 130 nm SiGe BiCMOS technology. The circuit is designed as an input stage for mm-wave wireless applications, where gain control improves the linearity of the full system and extends its input-power range. The noise performance is optimized with an inductive interstage matching technique, while simultaneously increasing the average gain per stage. The total gain is adjustable from 0 dB to 24.7 dB, with the minimum simulated noise figure of 9.2 dB and a corresponding bandwidth of 20 GHz attained at 20 dB. The output reflection coefficient is tuned through a varactor-based matching network over a 10 GHz bandwidth. The maximum input referred 1 dB compression point is −25.5 dBm. This is achieved with a dc power consumption of up to 37.2 mW. The area of the complete integrated circuit is 0.48 mm2.
{"title":"A 24.7 dB low noise amplifier with variable gain and tunable matching in 130 nm SiGe at 200 GHz","authors":"Paul Stärke, D. Fritsche, C. Carta, F. Ellinger","doi":"10.23919/EUMIC.2017.8230646","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230646","url":null,"abstract":"This work presents a low noise amplifier with variable gain, large bandwidth and a tunable output matching network fabricated in a 130 nm SiGe BiCMOS technology. The circuit is designed as an input stage for mm-wave wireless applications, where gain control improves the linearity of the full system and extends its input-power range. The noise performance is optimized with an inductive interstage matching technique, while simultaneously increasing the average gain per stage. The total gain is adjustable from 0 dB to 24.7 dB, with the minimum simulated noise figure of 9.2 dB and a corresponding bandwidth of 20 GHz attained at 20 dB. The output reflection coefficient is tuned through a varactor-based matching network over a 10 GHz bandwidth. The maximum input referred 1 dB compression point is −25.5 dBm. This is achieved with a dc power consumption of up to 37.2 mW. The area of the complete integrated circuit is 0.48 mm2.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124451794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.23919/EUMIC.2017.8230672
J. Brogle, A. Rozbicki, T. Boles
GaAs P-I-N diodes with AlGaAs layers have been invented and developed at MACOM since 2003. Addition of AlGaAs layers as the anode and/or cathode resulted in heterojunction diodes with reduced forward-biased high frequency resistance together with no change to reverse-biased capacitance. Improved electrical and thermal performance of GaAs P-I-N diode monolithic integrated circuits such as switches has been demonstrated by including such AlGaAs layers. This paper describes further performance improvements of AlGaAs integrated P-I-N diode switches with advanced electromagnetic (EM) and thermal modelling techniques, resulting in continuous-wave power reliability of series-shunt designs in excess of 10W and all-shunt designs in excess of 40W, at X-Band and Ka-Band respectively.
{"title":"Rugged AlGaAs P-I-N diode switches: High power RF & mmW all-shunt and series-shunt architectures","authors":"J. Brogle, A. Rozbicki, T. Boles","doi":"10.23919/EUMIC.2017.8230672","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230672","url":null,"abstract":"GaAs P-I-N diodes with AlGaAs layers have been invented and developed at MACOM since 2003. Addition of AlGaAs layers as the anode and/or cathode resulted in heterojunction diodes with reduced forward-biased high frequency resistance together with no change to reverse-biased capacitance. Improved electrical and thermal performance of GaAs P-I-N diode monolithic integrated circuits such as switches has been demonstrated by including such AlGaAs layers. This paper describes further performance improvements of AlGaAs integrated P-I-N diode switches with advanced electromagnetic (EM) and thermal modelling techniques, resulting in continuous-wave power reliability of series-shunt designs in excess of 10W and all-shunt designs in excess of 40W, at X-Band and Ka-Band respectively.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114271818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：