Frontiers of Optoelectronics最新文献

As a member of Xenes family, germanene has excellent nonlinear saturable absorption characteristics. In this work, we prepared germanene nanosheets by liquid phase exfoliation and measured their saturation intensity as 0.6 GW/cm² with a modulation depth of 8%. Then, conventional solitons with a pulse width of 946 fs and high-energy noise-like pulses with a pulse width of 784 fs were obtained by using germanene nanosheet as a saturable absorber for a mode-locked Erbium-doped fiber laser. The characteristics of the two types of pulses were investigated experimentally. The results reveal that germanene has great potential for modulation devices in ultrafast lasers and can be used as a material for creation of excellent nonlinear optical devices to explore richer applications in ultrafast photonics.

This paper proposes a mode-locked fiber laser based on graphene-coated microfiber. The total length of the fiber laser resonant cavity is 31.34 m. Under the condition of stable output of bright-dark soliton pairs from the fiber laser, dual-wavelength tuning is realized by adjusting the polarization controller (PC), and the wavelength tuning range is 11 nm. Furthermore, the effects of polarization states on bright-dark solitons are studied. It is demonstrated that the mode-locking state can be switched between conventional solitons and bright-dark solitons in the graphene mode-locked fiber laser. Bright-dark soliton pairs with different shapes and nanosecond pulse width can be obtained by adjusting the PC and pump power.

An integrated microwave photonic mixer based on silicon photonic platforms is proposed, which consist of a dual-drive Mach-Zehnder modulator and a balanced photodetector. The modulated optical signals from microwave photonic links can be directly demodulated and down-converted to intermediate frequency (IF) signals by the photonic mixer. The converted signal is obtained by conducting off-chip subtraction of the outputs from the balanced photodetector, and subsequent filtering of the high frequency items by an electrical low-pass filter. Benefiting from balanced detection, the conversion gain of the IF signal is improved by 6 dB, and radio frequency leakage and common-mode noise are suppressed significantly. System-level simulations show that the frequency mixing system has a spurious-free dynamic range of 89 dB·Hz^2/3, even with deteriorated linearity caused by the two cascaded modulators. The spur suppression ratio of the photonic mixer remains higher than 40 dB when the IF varies from 0.5 to 4 GHz. The electrical-electrical 3 dB bandwidth of frequency conversion is 11 GHz. The integrated frequency mixing approach is quite simple, requiring no extra optical filters or electrical 90° hybrid coupler, which makes the system more stable and with broader bandwidth so that it can meet the potential demand in practical applications.

In-fiber whispering gallery mode (WGM) microsphere resonators have received remarkable attention due to the superiorities of compact structure, high stability and self-alignment. As an in-fiber structure, WGM microsphere resonators have been demonstrated in various applications, such as sensors, filters and lasers, which have significant impacts on modern optics. Herein, we review recent progress of in-fiber WGM microsphere resonators, which involve fibers of diverse structures and microspheres of different materials. First, a brief introduction is given to in-fiber WGM microsphere resonators, from structures to applications. Then, we focus on recent progresses in this field, including in-fiber couplers based on conventional fibers, capillaries and micro-structure hollow fibers, and passive/active microspheres. Finally, future developments of the in-fiber WGM microsphere resonators are envisioned.

Black phosphorus quantum dots (BPQDs) are synthesized and combined with graphene sheet. The fabricated BPQDs/graphene devices are capable of detecting visible and near infrared radiation. The adsorption effect of BPQDs in graphene is clarified by the relationship of the photocurrent and the shift of the Dirac point with different substrate. The Dirac point moves toward a neutral point under illumination with both SiO₂/Si and Si₃N₄/Si substrates, indicating an anti-doped feature of photo-excitation. To our knowledge, this provides the first observation of photoresist induced photocurrent in such systems. Without the influence of the photoresist the device can respond to infrared light up to 980 nm wavelength in vacuum in a cryostat, in which the photocurrent is positive and photoconduction effect is believed to dominate the photocurrent. Finally, the adsorption effect is modeled using a first-principle method to give a picture of charge transfer and orbital contribution in the interaction of phosphorus atoms and single-layer graphene.

Single perylene diimide (PDI) used as a non-fullerene acceptor (NFA) in organic solar cells (OSCs) is enticing because of its low cost and excellent stability. To improve the photovoltaic performance, it is vital to narrow the bandgap and regulate the stacking behavior. To address this challenge, we synthesize soluble perylenetetracarboxylic bisbenzimidazole (PTCBI) molecules with a bulky side chain at the bay region, by replacing the widely used "swallow tail" type alkyl chains at the imide position of PDI molecules with a planar benzimidazole structure. Compared with PDI molecules, PTCBI molecules exhibit red-shifted UV-vis absorption spectra with larger extinction coefficient, and one magnitude higher electron mobility. Finally, OSCs based on one soluble PTCBI-type NFA, namely MAS-7, exhibit a champion power conversion efficiency (PCE) of 4.34%, which is significantly higher than that of the corresponding PDI-based OSCs and is the highest PCE of PTCBI-based OSCs reported. These results highlight the potential of soluble PTCBI derivatives as NFAs in OSCs.

Most learning-based methods previously used in image dehazing employ a supervised learning strategy, which is time-consuming and requires a large-scale dataset. However, large-scale datasets are difficult to obtain. Here, we propose a self-supervised zero-shot dehazing network (SZDNet) based on dark channel prior, which uses a hazy image generated from the output dehazed image as a pseudo-label to supervise the optimization process of the network. Additionally, we use a novel multichannel quad-tree algorithm to estimate atmospheric light values, which is more accurate than previous methods. Furthermore, the sum of the cosine distance and the mean squared error between the pseudo-label and the input image is applied as a loss function to enhance the quality of the dehazed image. The most significant advantage of the SZDNet is that it does not require a large dataset for training before performing the dehazing task. Extensive testing shows promising performances of the proposed method in both qualitative and quantitative evaluations when compared with state-of-the-art methods.

Due to the advantages of low propagation loss, wide operation bandwidth, continuous delay tuning, fast tuning speed, and compact footprints, chirped Bragg grating waveguide has great application potential in wideband phased array beamforming systems. However, the disadvantage of large group delay error hinders their practical applications. The nonlinear group delay spectrum is one of the main factors causing large group delay errors. To solve this problem, waveguides with nonlinear gradient widths are adopted in this study to compensate for the nonlinear effect of the grating apodization on the mode effective index. As a result, a linear group delay spectrum is obtained in the experiment, and the group delay error is halved.

We report a new nBn photodetector (nBn-PD) design based on the InAlSb/AlSb/InAlSb/InAsSb material systems for mid-wavelength infrared (MWIR) applications. In this structure, delta-doped compositionally graded barrier (δ-DCGB) layers are suggested, the advantage of which is creation of a near zero valence band offset in nBn photodetectors. The design of the δ-DCGB nBn-PD device includes a 3 µm absorber layer (n-InAs_0.81Sb_0.19), a unipolar barrier layer (AlSb), and 0.2 μm contact layer (n-InAs_0.81Sb_0.19) as well as a 0.116 µm linear grading region (InAlSb) from the contact to the barrier layer and also from the barrier to the absorber layer. The analysis includes various dark current contributions, such as the Shockley-Read-Hall (SRH), trap-assisted tunneling (TAT), Auger, and Radiative recombination mechanisms, to acquire more precise results. Consequently, we show that the method used in the nBn device design leads to diffusion-limited dark current so that the dark current density is 2.596 × 10^-8 A/cm² at 150 K and a bias voltage of - 0.2 V. The proposed nBn detector exhibits a 50% cutoff wavelength of more than 5 µm, the peak current responsivity is 1.6 A/W at a wavelength of 4.5 µm and a - 0.2 V bias with 0.05 W/cm² backside illumination without anti-reflective coating. The maximum quantum efficiency at 4.5 µm is about 48.6%, and peak specific detectivity (D*) is of 3.37 × 10¹⁰ cm⋅Hz^1/2/W. Next, to solve the reflection concern in this nBn devices, we use a BaF₂ anti-reflection coating layer due to its high transmittance in the MWIR window. It leads to an increase of almost 100% in the optical response metrics, such as the current responsivity, quantum efficiency, and detectivity, compared to the optical response without an anti-reflection coating layer.

Microwave photonic sensors are promising for improving sensing resolution and speed of optical sensors. In this paper, a high-sensitivity, high-resolution temperature sensor based on microwave photonic filter (MPF) is proposed and demonstrated. A micro-ring resonator (MRR) based on silicon-on-insulator is used as the sensing probe to convert the wavelength shift caused by temperature change to microwave frequency variation via the MPF system. By analyzing the frequency shift with high-speed and high-resolution monitors, the temperature change can be detected. The MRR is designed with multi-mode ridge waveguides to reduce propagation loss and achieves an ultra-high Q factor of 1.01 × 10⁶. The proposed MPF has a single passband with a narrow bandwidth of 192 MHz. With clear peak-frequency shift, the sensitivity of the MPF-based temperature sensor is measured to be 10.22 GHz/°C. Due to higher sensitivity and ultra-narrow bandwidth of the MPF, the sensing resolution of the proposed temperature sensor is as high as 0.019 °C.