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2016 5th International Symposium on Next-Generation Electronics (ISNE)最新文献

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Improving efficiency and light quality of white LEDs by adding ZrO2 nano-particle and red phosphor in encapsulant 在封装剂中加入ZrO2纳米粒子和红色荧光粉,提高白光led的效率和光质量
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543392
Yu-Cheng Lan, Chunliang Lin, Wei-Syuan Wang, Zheng-Yi Liu, B. Hsieh, Sheng-Lun Chen, Hui-Kai Huang
Efficiency and light quality of white light-emitting diodes (LEDs) were improved by adding ZrO2 nano-particle and red phosphor in encapsulant. ZrO2 nanoparticles can enhance the light scattering ability of encapsulant on LED chip. Doping ZrO2 nanoparticles with YAG phosphor into encapsulant package (LED II) luminous flux increase of 7.7 % compared conventional doping YAG phosphor package (LED I). Conformal YAG phosphor on LED chip and doping ZrO2 nanoparticles into encapsulant package of white LED (LED III) the luminous flux increase of 19.8 % compared LED II. Doping red phosphor into encapsulant of LED II produced LED IV, CRI can improved from 47 to 90 and R9 from 0 to 90.
在封装剂中加入ZrO2纳米粒子和红色荧光粉,提高了白光二极管的发光效率和光质量。ZrO2纳米颗粒可以增强封装剂在LED芯片上的光散射能力。在封装中掺杂ZrO2纳米粒子和YAG荧光粉(LED II)的光通量比常规掺杂YAG荧光粉封装(LED I)的光通量提高了7.7%,在LED芯片上共形YAG荧光粉和在封装中掺杂ZrO2纳米粒子的白光LED (LED III)的光通量比LED II提高了19.8%。在LED II的封装剂中掺入红色荧光粉,可使LED IV的CRI由47提高到90,R9由0提高到90。
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引用次数: 3
Electronic properties of strained monolayer MoS2 using tight binding method 用紧密结合法研究应变单层MoS2的电子特性
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543323
Shuoyuan Chen, Yuh‐Renn Wu
The electronic properties of monolayer MoS2 have been investigated using tight binding method. We have studied the band gap and effective mass of monolayer MoS2, and the effect of tensile strain. In both bi-axial and uni-axial strain, we observed that the band gap and the effective mass decrease when the strain increases. However, at about 1.8% bi-axial strain and 4.2% uni-axial strain, the direct to indirect band gap transition happens. The hole effective mass for transport therefore changes from the smaller mh (K) to the larger mh (T), which makes significant influence on the transport properties.
用紧密结合的方法研究了单层二硫化钼的电子性质。研究了单元化二硫化钼的带隙、有效质量以及拉伸应变的影响。在双轴应变和单轴应变中,我们观察到,随着应变的增加,带隙和有效质量减小。然而,在1.8%的双轴应变和4.2%的单轴应变下,发生了直接到间接的带隙转变。因此,空穴输运的有效质量由较小的mh (K)变为较大的mh (T),这对输运性质有显著影响。
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引用次数: 1
Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy 选择性面积分子束外延在Si(111)上生长高定向的InAs纳米线
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543314
Che-Wei Yang, Wei-Chieh Chen, Hao-Hsiung Lin
Effects of growth conditions including V/III ratio, initial treatment and hole diameter on the selective-area MBE growth of InAs nanowires (NW) on patterned Si (111) substrates are investigated. High V/III ratio favors the axial growth of the NWs. Results from vertical yield study suggests that (111)B is an inherent preferential domain when growth InAs on non-polar (111)Si. The preference is independent of the treatments. However, As illumination before the growth could convert the (111)Si to (111)A InAs and thus decreases the vertical yield. So far, we have successfully achieved a vertical yield over 70%.
研究了生长条件(V/III比、初始处理和孔径)对纳米线(NW)在Si(111)衬底上选择性MBE生长的影响。高V/III比有利于NWs的轴向生长。垂直产率研究结果表明,在非极性(111)Si上生长InAs时,(111)B是一个固有的优先畴。这种偏好与治疗方法无关。然而,生长前的As光照会将(111)Si转化为(111)A InAs,从而降低了垂直产率。到目前为止,我们已经成功地实现了70%以上的垂直收率。
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引用次数: 0
Design and implementation of a 62–77 GHz low noise amplifier in 90 nm CMOS 62 - 77ghz 90 nm CMOS低噪声放大器的设计与实现
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543353
Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin
A 62 to 77 GHz broadband low noise amplifier (LNA) using a low-cost 90 nm standard CMOS technology is designed and implemented. From the measured results, the proposed LNA has a peak gain of 10dB at 70 GHz, a 3dB bandwidth is 15 GHz from 62 to 77 GHz, an output reflection coefficient (S22) is better than -4dB, an input reflection coefficient (S11) is lower than -10dB and the power consumption of the LNA is 17.6 mW. In addition, the simulated noise figure (NF) is 7.6 dB at 70 GHz and lower than 8.5 dB entire bandwidth.
设计并实现了一种采用低成本90纳米标准CMOS技术的62 ~ 77 GHz宽带低噪声放大器(LNA)。实测结果表明,该LNA在70 GHz时的峰值增益为10dB,在62 ~ 77 GHz范围内的3dB带宽为15 GHz,输出反射系数(S22)优于-4dB,输入反射系数(S11)低于-10dB,功耗为17.6 mW。此外,模拟噪声系数(NF)在70 GHz时为7.6 dB,整个带宽低于8.5 dB。
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引用次数: 2
Design of tri-band bandpass filter using parallel coupled structures 采用平行耦合结构的三带带通滤波器设计
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543378
Teng-Yi Yang, Yi-Cheng Tsai, Shih‐Kun Liu
A tri-band bandpass filter using λ/4 parallel-coupled stepped impedance microstrip is proposed. The center frequencies of the three passbands are located at 1.78 GHz, 3.9 GHz, and 5.94 GHz respectively. A transmission zero is generated to improve the isolation between the first and second passbands. The experimental results agree well with the simulated ones. The circuit size is measured to be 0.04 λg × 0.75 λg.
提出了一种采用λ/4并联耦合阶跃阻抗微带的三带带通滤波器。三个通带的中心频率分别位于1.78 GHz、3.9 GHz和5.94 GHz。产生传输零以改善第一和第二通带之间的隔离。实验结果与模拟结果吻合较好。电路尺寸测量为0.04 λg × 0.75 λg。
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引用次数: 0
Study of the multi-binding biotinylated Iron oxide nanoparticles (biotin-IONPs) as a promising versatile label material for magnetic biodetection devices 多结合生物素化氧化铁纳米颗粒(生物素- ionps)作为磁性生物检测设备有前途的多功能标记材料的研究
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543347
Yimeng Du, P. Pong
By realizing the multi-binding of magnetic labels with each biomolecule, the sensitivity of magnetic biodetection devices can be improved. In this study, biotinylated iron oxide nanoparticles (biotin-IONPs) were synthesized, and their multi-binding with streptavidin-functionalized biomolecules was investigated. The final biotin-IONPs with 17 nm magnetic core size exhibit superparamagnetic behavior, hydrophilic stability, and multi-binding ability with streptavidin-functionalized antibodies both on gold surfaces and suspended in solution. Consequently, biotin-IONPs are promising magnetic label materials for the improvement of magnetic biodetection devices.
通过实现磁性标记与每个生物分子的多重结合,可以提高磁性生物检测装置的灵敏度。本研究合成了生物素化氧化铁纳米颗粒(生物素- ionps),并研究了其与链霉亲和素功能化生物分子的多重结合。最终获得的磁芯尺寸为17 nm的生物素- ionps在金表面和溶液中均表现出超顺磁性、亲水性稳定性以及与链霉亲和素功能化抗体的多重结合能力。因此,生物素离子是一种很有前途的磁性标记材料,可用于改进磁性生物检测设备。
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引用次数: 0
Structure of GaAsN alloy within miscibility gap GaAsN合金在混相间隙内的组织
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543310
Hong-Ming Wu, K. Lin, Hao-Hsiung Lin
We report on the structural and electronic properties of a series of GaAs1-xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electron diffraction (SAD) were used to probe the crystalline of GaAs0.496N0.504 sample. The results indicate that the alloy is polycrystalline and amorphous. In the polycrystalline observed zinc-blende (ZB) and hexagonal structure. In this result, we suggest generation of miscibility and phase separation from two kind of structure. Calculation the vertical and horizontal lattice constant with x in the range from 0.106-0.848. Observed the az is dramatic drop with increase N content and axy slow decrease, we suggest this result relation of nitrogen cluster alone [001] and residual horizontal substrate strain. Photo-modulated reflectance spectroscopy was used to determine the energy gap of the GaAs1-xNx alloys, which ranges from 0.7-2.0 eV, covering a large part of the solar spectrum. The energy gap is in agreement with BAC model.
本文报道了一系列宽x范围的GaAs1-xNx的结构和电子性能。采用等离子体辅助分子束外延技术在(001)GaAs衬底上生长合金。采用透射电镜和选择性区域电子衍射(SAD)对GaAs0.496N0.504样品的晶体进行了探测。结果表明,该合金为多晶非晶合金。在多晶中观察到锌闪锌矿(ZB)和六角形结构。在这个结果中,我们提出了两种结构产生混相和相分离。计算垂直和水平晶格常数,x在0.106-0.848范围内。观察到氮含量随氮含量的增加而急剧下降或缓慢下降,我们认为这一结果与氮团簇本身[001]与残余水平基底应变有关。光调制反射光谱法测定了GaAs1-xNx合金的能隙,其范围在0.7 ~ 2.0 eV之间,覆盖了太阳光谱的大部分。能隙与BAC模型基本一致。
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引用次数: 0
Efficiency enhancement of perovskite solar cells with a buffer layer 用缓冲层提高钙钛矿太阳能电池的效率
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543388
Meng-Cheng Yeh, S. Su, Wen-Kai Lin, Jhih-Yung Chen, M. Yokoyama
The perovskite solar cell using solvent treatment on active layer and a thin buffer layer added was fabricated and characterized. The morphology of MAPM3 active layer agglomerates owing to methylbenzene treatment and the perovskite solar cell shows an increased short circuit current density (Jsc). An efficient buffer layer, the 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), which enhances device performance by forming well interfacial contact and restraining the hole from transporting to the cathode. The optimized perovskite solar cell showed an open circuit voltage (Voc) of 0.90 V, Jsc of 13.44 mA/cm2, fill factor (F.F.) of 64.69%, and power conversion efficiency (PCE) of 7.81% under simulated AM1.5G illumination of 100 mW/cm2, respectively.
采用溶剂处理的方法制备了活性层加薄缓冲层的钙钛矿太阳能电池并对其进行了表征。经甲基苯处理后,MAPM3活性层形貌发生团聚,钙钛矿太阳能电池的短路电流密度(Jsc)增大。一种高效的缓冲层,1,3,5-三(n -苯基苯并咪唑-2-基)苯(TPBi),通过形成良好的界面接触和抑制空穴向阴极转移来提高器件性能。优化后的钙钛矿太阳能电池在100mw /cm2的AM1.5G光照下,开路电压(Voc)为0.90 V, Jsc为13.44 mA/cm2,填充系数(F.F.)为64.69%,功率转换效率(PCE)为7.81%。
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引用次数: 1
The effects of plating current and rotation speed on the microstructural properties of electrochemical plated Cu films 电镀电流和转速对电化学镀铜膜微观组织性能的影响
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543401
Wei-Lin Wang, Shi-Jun Liu, M. Yeh, Hsien-Chang Kuo, Hung-Ju Chien, T. Ying
The microstructures of electrochemical plated (ECP) Cu films are investigated by various plating current and the rotation speed of wafer. Decreasing plating current increases the impurity concentration in an ECP Cu film. The impurity content is also raised by elevating the rotation speed of wafer. The grain size and texture behavior of an ECP Cu film is affected by the impurity concentration and distribution.
通过不同的电镀电流和不同的晶圆转速,研究了电化学镀铜膜的微观结构。减小电镀电流会增加ECP铜膜中的杂质浓度。通过提高晶圆片的转速,杂质含量也有所提高。ECP铜膜的晶粒尺寸和织构行为受杂质浓度和分布的影响。
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引用次数: 0
Permittivity and temperature effects to rectification performance of self-switching device using two-dimensional simulation 利用二维模拟研究介电常数和温度对自开关器件整流性能的影响
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543287
N. Zakaria, Z. Zailan, M. Isa, S. Taking, M. Arshad, S. R. Kasjoo
Characterization on an InGaAs-based self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation on the current-voltage (I-V) characteristic of L-shaped 70 nm channel SSD has been conducted using ATLAS two-dimensional (2D) simulator for different insulating channel materials with relative permittivity ranging from 1.0 to 9.3 under temperature range of 300 K-600 K. A similar I-V curve to diode behavior has been observed. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the effects of both permittivity and temperature to the rectification properties are observed. The results obtained can assist the design of SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.
报道了一种基于ingaas的自开关二极管(SSD)的高频整流特性。利用ATLAS二维仿真器对相对介电常数为1.0 ~ 9.3的不同绝缘通道材料在300 K ~ 600 K温度范围内的l形70 nm通道固态硬盘的电流-电压特性进行了仿真。一个类似的I-V曲线二极管的行为已被观察到。此外,通过外推模拟的I-V图评估了固态硬盘的曲率系数,并观察了介电常数和温度对整流性能的影响。所得结果有助于固态硬盘作为微波整流器的设计,特别是在射频采集应用中。
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引用次数: 5
期刊
2016 5th International Symposium on Next-Generation Electronics (ISNE)
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