Efficiency and light quality of white light-emitting diodes (LEDs) were improved by adding ZrO2 nano-particle and red phosphor in encapsulant. ZrO2 nanoparticles can enhance the light scattering ability of encapsulant on LED chip. Doping ZrO2 nanoparticles with YAG phosphor into encapsulant package (LED II) luminous flux increase of 7.7 % compared conventional doping YAG phosphor package (LED I). Conformal YAG phosphor on LED chip and doping ZrO2 nanoparticles into encapsulant package of white LED (LED III) the luminous flux increase of 19.8 % compared LED II. Doping red phosphor into encapsulant of LED II produced LED IV, CRI can improved from 47 to 90 and R9 from 0 to 90.
{"title":"Improving efficiency and light quality of white LEDs by adding ZrO2 nano-particle and red phosphor in encapsulant","authors":"Yu-Cheng Lan, Chunliang Lin, Wei-Syuan Wang, Zheng-Yi Liu, B. Hsieh, Sheng-Lun Chen, Hui-Kai Huang","doi":"10.1109/ISNE.2016.7543392","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543392","url":null,"abstract":"Efficiency and light quality of white light-emitting diodes (LEDs) were improved by adding ZrO2 nano-particle and red phosphor in encapsulant. ZrO2 nanoparticles can enhance the light scattering ability of encapsulant on LED chip. Doping ZrO2 nanoparticles with YAG phosphor into encapsulant package (LED II) luminous flux increase of 7.7 % compared conventional doping YAG phosphor package (LED I). Conformal YAG phosphor on LED chip and doping ZrO2 nanoparticles into encapsulant package of white LED (LED III) the luminous flux increase of 19.8 % compared LED II. Doping red phosphor into encapsulant of LED II produced LED IV, CRI can improved from 47 to 90 and R9 from 0 to 90.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116741958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543323
Shuoyuan Chen, Yuh‐Renn Wu
The electronic properties of monolayer MoS2 have been investigated using tight binding method. We have studied the band gap and effective mass of monolayer MoS2, and the effect of tensile strain. In both bi-axial and uni-axial strain, we observed that the band gap and the effective mass decrease when the strain increases. However, at about 1.8% bi-axial strain and 4.2% uni-axial strain, the direct to indirect band gap transition happens. The hole effective mass for transport therefore changes from the smaller mh (K) to the larger mh (T), which makes significant influence on the transport properties.
{"title":"Electronic properties of strained monolayer MoS2 using tight binding method","authors":"Shuoyuan Chen, Yuh‐Renn Wu","doi":"10.1109/ISNE.2016.7543323","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543323","url":null,"abstract":"The electronic properties of monolayer MoS2 have been investigated using tight binding method. We have studied the band gap and effective mass of monolayer MoS2, and the effect of tensile strain. In both bi-axial and uni-axial strain, we observed that the band gap and the effective mass decrease when the strain increases. However, at about 1.8% bi-axial strain and 4.2% uni-axial strain, the direct to indirect band gap transition happens. The hole effective mass for transport therefore changes from the smaller mh (K) to the larger mh (T), which makes significant influence on the transport properties.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129081204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543314
Che-Wei Yang, Wei-Chieh Chen, Hao-Hsiung Lin
Effects of growth conditions including V/III ratio, initial treatment and hole diameter on the selective-area MBE growth of InAs nanowires (NW) on patterned Si (111) substrates are investigated. High V/III ratio favors the axial growth of the NWs. Results from vertical yield study suggests that (111)B is an inherent preferential domain when growth InAs on non-polar (111)Si. The preference is independent of the treatments. However, As illumination before the growth could convert the (111)Si to (111)A InAs and thus decreases the vertical yield. So far, we have successfully achieved a vertical yield over 70%.
{"title":"Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy","authors":"Che-Wei Yang, Wei-Chieh Chen, Hao-Hsiung Lin","doi":"10.1109/ISNE.2016.7543314","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543314","url":null,"abstract":"Effects of growth conditions including V/III ratio, initial treatment and hole diameter on the selective-area MBE growth of InAs nanowires (NW) on patterned Si (111) substrates are investigated. High V/III ratio favors the axial growth of the NWs. Results from vertical yield study suggests that (111)B is an inherent preferential domain when growth InAs on non-polar (111)Si. The preference is independent of the treatments. However, As illumination before the growth could convert the (111)Si to (111)A InAs and thus decreases the vertical yield. So far, we have successfully achieved a vertical yield over 70%.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129471530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543353
Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin
A 62 to 77 GHz broadband low noise amplifier (LNA) using a low-cost 90 nm standard CMOS technology is designed and implemented. From the measured results, the proposed LNA has a peak gain of 10dB at 70 GHz, a 3dB bandwidth is 15 GHz from 62 to 77 GHz, an output reflection coefficient (S22) is better than -4dB, an input reflection coefficient (S11) is lower than -10dB and the power consumption of the LNA is 17.6 mW. In addition, the simulated noise figure (NF) is 7.6 dB at 70 GHz and lower than 8.5 dB entire bandwidth.
{"title":"Design and implementation of a 62–77 GHz low noise amplifier in 90 nm CMOS","authors":"Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin","doi":"10.1109/ISNE.2016.7543353","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543353","url":null,"abstract":"A 62 to 77 GHz broadband low noise amplifier (LNA) using a low-cost 90 nm standard CMOS technology is designed and implemented. From the measured results, the proposed LNA has a peak gain of 10dB at 70 GHz, a 3dB bandwidth is 15 GHz from 62 to 77 GHz, an output reflection coefficient (S22) is better than -4dB, an input reflection coefficient (S11) is lower than -10dB and the power consumption of the LNA is 17.6 mW. In addition, the simulated noise figure (NF) is 7.6 dB at 70 GHz and lower than 8.5 dB entire bandwidth.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"2003 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125788253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543378
Teng-Yi Yang, Yi-Cheng Tsai, Shih‐Kun Liu
A tri-band bandpass filter using λ/4 parallel-coupled stepped impedance microstrip is proposed. The center frequencies of the three passbands are located at 1.78 GHz, 3.9 GHz, and 5.94 GHz respectively. A transmission zero is generated to improve the isolation between the first and second passbands. The experimental results agree well with the simulated ones. The circuit size is measured to be 0.04 λg × 0.75 λg.
{"title":"Design of tri-band bandpass filter using parallel coupled structures","authors":"Teng-Yi Yang, Yi-Cheng Tsai, Shih‐Kun Liu","doi":"10.1109/ISNE.2016.7543378","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543378","url":null,"abstract":"A tri-band bandpass filter using λ/4 parallel-coupled stepped impedance microstrip is proposed. The center frequencies of the three passbands are located at 1.78 GHz, 3.9 GHz, and 5.94 GHz respectively. A transmission zero is generated to improve the isolation between the first and second passbands. The experimental results agree well with the simulated ones. The circuit size is measured to be 0.04 λg × 0.75 λg.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115939412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543347
Yimeng Du, P. Pong
By realizing the multi-binding of magnetic labels with each biomolecule, the sensitivity of magnetic biodetection devices can be improved. In this study, biotinylated iron oxide nanoparticles (biotin-IONPs) were synthesized, and their multi-binding with streptavidin-functionalized biomolecules was investigated. The final biotin-IONPs with 17 nm magnetic core size exhibit superparamagnetic behavior, hydrophilic stability, and multi-binding ability with streptavidin-functionalized antibodies both on gold surfaces and suspended in solution. Consequently, biotin-IONPs are promising magnetic label materials for the improvement of magnetic biodetection devices.
{"title":"Study of the multi-binding biotinylated Iron oxide nanoparticles (biotin-IONPs) as a promising versatile label material for magnetic biodetection devices","authors":"Yimeng Du, P. Pong","doi":"10.1109/ISNE.2016.7543347","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543347","url":null,"abstract":"By realizing the multi-binding of magnetic labels with each biomolecule, the sensitivity of magnetic biodetection devices can be improved. In this study, biotinylated iron oxide nanoparticles (biotin-IONPs) were synthesized, and their multi-binding with streptavidin-functionalized biomolecules was investigated. The final biotin-IONPs with 17 nm magnetic core size exhibit superparamagnetic behavior, hydrophilic stability, and multi-binding ability with streptavidin-functionalized antibodies both on gold surfaces and suspended in solution. Consequently, biotin-IONPs are promising magnetic label materials for the improvement of magnetic biodetection devices.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115916437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543310
Hong-Ming Wu, K. Lin, Hao-Hsiung Lin
We report on the structural and electronic properties of a series of GaAs1-xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electron diffraction (SAD) were used to probe the crystalline of GaAs0.496N0.504 sample. The results indicate that the alloy is polycrystalline and amorphous. In the polycrystalline observed zinc-blende (ZB) and hexagonal structure. In this result, we suggest generation of miscibility and phase separation from two kind of structure. Calculation the vertical and horizontal lattice constant with x in the range from 0.106-0.848. Observed the az is dramatic drop with increase N content and axy slow decrease, we suggest this result relation of nitrogen cluster alone [001] and residual horizontal substrate strain. Photo-modulated reflectance spectroscopy was used to determine the energy gap of the GaAs1-xNx alloys, which ranges from 0.7-2.0 eV, covering a large part of the solar spectrum. The energy gap is in agreement with BAC model.
{"title":"Structure of GaAsN alloy within miscibility gap","authors":"Hong-Ming Wu, K. Lin, Hao-Hsiung Lin","doi":"10.1109/ISNE.2016.7543310","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543310","url":null,"abstract":"We report on the structural and electronic properties of a series of GaAs1-xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electron diffraction (SAD) were used to probe the crystalline of GaAs0.496N0.504 sample. The results indicate that the alloy is polycrystalline and amorphous. In the polycrystalline observed zinc-blende (ZB) and hexagonal structure. In this result, we suggest generation of miscibility and phase separation from two kind of structure. Calculation the vertical and horizontal lattice constant with x in the range from 0.106-0.848. Observed the az is dramatic drop with increase N content and axy slow decrease, we suggest this result relation of nitrogen cluster alone [001] and residual horizontal substrate strain. Photo-modulated reflectance spectroscopy was used to determine the energy gap of the GaAs1-xNx alloys, which ranges from 0.7-2.0 eV, covering a large part of the solar spectrum. The energy gap is in agreement with BAC model.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130444809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543388
Meng-Cheng Yeh, S. Su, Wen-Kai Lin, Jhih-Yung Chen, M. Yokoyama
The perovskite solar cell using solvent treatment on active layer and a thin buffer layer added was fabricated and characterized. The morphology of MAPM3 active layer agglomerates owing to methylbenzene treatment and the perovskite solar cell shows an increased short circuit current density (Jsc). An efficient buffer layer, the 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), which enhances device performance by forming well interfacial contact and restraining the hole from transporting to the cathode. The optimized perovskite solar cell showed an open circuit voltage (Voc) of 0.90 V, Jsc of 13.44 mA/cm2, fill factor (F.F.) of 64.69%, and power conversion efficiency (PCE) of 7.81% under simulated AM1.5G illumination of 100 mW/cm2, respectively.
{"title":"Efficiency enhancement of perovskite solar cells with a buffer layer","authors":"Meng-Cheng Yeh, S. Su, Wen-Kai Lin, Jhih-Yung Chen, M. Yokoyama","doi":"10.1109/ISNE.2016.7543388","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543388","url":null,"abstract":"The perovskite solar cell using solvent treatment on active layer and a thin buffer layer added was fabricated and characterized. The morphology of MAPM3 active layer agglomerates owing to methylbenzene treatment and the perovskite solar cell shows an increased short circuit current density (Jsc). An efficient buffer layer, the 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), which enhances device performance by forming well interfacial contact and restraining the hole from transporting to the cathode. The optimized perovskite solar cell showed an open circuit voltage (Voc) of 0.90 V, Jsc of 13.44 mA/cm2, fill factor (F.F.) of 64.69%, and power conversion efficiency (PCE) of 7.81% under simulated AM1.5G illumination of 100 mW/cm2, respectively.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134274014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543401
Wei-Lin Wang, Shi-Jun Liu, M. Yeh, Hsien-Chang Kuo, Hung-Ju Chien, T. Ying
The microstructures of electrochemical plated (ECP) Cu films are investigated by various plating current and the rotation speed of wafer. Decreasing plating current increases the impurity concentration in an ECP Cu film. The impurity content is also raised by elevating the rotation speed of wafer. The grain size and texture behavior of an ECP Cu film is affected by the impurity concentration and distribution.
{"title":"The effects of plating current and rotation speed on the microstructural properties of electrochemical plated Cu films","authors":"Wei-Lin Wang, Shi-Jun Liu, M. Yeh, Hsien-Chang Kuo, Hung-Ju Chien, T. Ying","doi":"10.1109/ISNE.2016.7543401","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543401","url":null,"abstract":"The microstructures of electrochemical plated (ECP) Cu films are investigated by various plating current and the rotation speed of wafer. Decreasing plating current increases the impurity concentration in an ECP Cu film. The impurity content is also raised by elevating the rotation speed of wafer. The grain size and texture behavior of an ECP Cu film is affected by the impurity concentration and distribution.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124095086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543287
N. Zakaria, Z. Zailan, M. Isa, S. Taking, M. Arshad, S. R. Kasjoo
Characterization on an InGaAs-based self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation on the current-voltage (I-V) characteristic of L-shaped 70 nm channel SSD has been conducted using ATLAS two-dimensional (2D) simulator for different insulating channel materials with relative permittivity ranging from 1.0 to 9.3 under temperature range of 300 K-600 K. A similar I-V curve to diode behavior has been observed. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the effects of both permittivity and temperature to the rectification properties are observed. The results obtained can assist the design of SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.
报道了一种基于ingaas的自开关二极管(SSD)的高频整流特性。利用ATLAS二维仿真器对相对介电常数为1.0 ~ 9.3的不同绝缘通道材料在300 K ~ 600 K温度范围内的l形70 nm通道固态硬盘的电流-电压特性进行了仿真。一个类似的I-V曲线二极管的行为已被观察到。此外，通过外推模拟的I-V图评估了固态硬盘的曲率系数，并观察了介电常数和温度对整流性能的影响。所得结果有助于固态硬盘作为微波整流器的设计，特别是在射频采集应用中。
{"title":"Permittivity and temperature effects to rectification performance of self-switching device using two-dimensional simulation","authors":"N. Zakaria, Z. Zailan, M. Isa, S. Taking, M. Arshad, S. R. Kasjoo","doi":"10.1109/ISNE.2016.7543287","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543287","url":null,"abstract":"Characterization on an InGaAs-based self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation on the current-voltage (I-V) characteristic of L-shaped 70 nm channel SSD has been conducted using ATLAS two-dimensional (2D) simulator for different insulating channel materials with relative permittivity ranging from 1.0 to 9.3 under temperature range of 300 K-600 K. A similar I-V curve to diode behavior has been observed. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the effects of both permittivity and temperature to the rectification properties are observed. The results obtained can assist the design of SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124802924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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