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Ku-Band Low Phase Noise VCO Using High-Quality Factor Transformer in 0.18-μm CMOS Technology 0.18μm CMOS工艺中采用高质量因数变换器的Ku波段低相位噪声VCO
IF 3 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-10-01 DOI: 10.1109/LMWC.2022.3167705
I. Mansour, Marwa Mansour, M. Aboualalaa, A. Allam, A. Abdel-Rahman, R. Pokharel, M. Abo-Zahhad
This work introduces a low phase-noise (PN) wideband voltage-controlled-oscillator (VCO) by proposing five ports transformer in 0.18- $mu text{m}$ CMOS technology. The proposed VCO uses five ports transformer and operates in the low band when all the pMOS–nMOS cross-coupled VCO components are activated, whereas this VCO operates in the high band using only part of the transformer, and an nMOS cross-coupled core. The transformer is designed using the top metal layer (M6) and the first inductor is meander line U-shaped center tap inductor, while the second inductor consists of two shunted octagonal loops to increase the quality ( ${Q}$ -) factor compared with using a single-loop inductor. The wideband switched transformer VCO achieves a measured frequency tuning range (FTR) of 16.4–17.1 GHz with a PN of −113.3 dBc/Hz at 1-MHz offset, and from 17 to 17.9 GHz with a PN of −110.3 dBc/Hz at 1-MHz offset in the low and high bands, respectively. The achieved figure-of-merit (FoM) is −189 and −186.4 dBc/Hz in the low and high bands, respectively.
本工作介绍了一种低相位噪声(PN)宽带压控振荡器(VCO),提出了0.18-$mutext{m}$CMOS技术中的五端口变压器。所提出的VCO使用五端口变压器,当所有pMOS–nMOS交叉耦合的VCO组件被激活时,VCO在低频带工作,而该VCO仅使用变压器的一部分和nMOS交叉耦核心在高频带工作。变压器是使用顶部金属层(M6)设计的,第一个电感器是曲折线U形中心抽头电感器,而第二个感应器由两个并联的八边形回路组成,与使用单个回路电感器相比,提高了质量(${Q}$)因子。宽带开关变压器VCO在低频带和高频带中分别实现了16.4–17.1 GHz的测量频率调谐范围(FTR),在1-MHz偏移处PN为−113.3 dBc/Hz,在17至17.9 GHz的范围内,在1-Hz偏移处PN的范围为−110.3 dBc/Hz。在低频段和高频段,实现的品质因数(FoM)分别为−189和−186.4 dBc/Hz。
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引用次数: 2
A 76.5–92.6 GHz CMOS LNA Using Two-Port kQ-Product Theory for Transformer Design 基于双端口kQ-Product理论的76.5-92.6 GHz CMOS LNA变压器设计
IF 3 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-10-01 DOI: 10.1109/LMWC.2022.3170929
Youming Zhang, Zhennan Wei, Xusheng Tang, Linghan Zhang, F. Huang
This letter presents a convenient approach based on the two-port $kQ$ -product theory to analyze the influence of interwinding capacitive coupling on the efficiency of the transformer. It is demonstrated that a transformer with proper size can benefit from the interwinding capacitive coupling to maximize its efficiency at a desired frequency. The proposed design approach is used in a $W$ -band low-noise amplifier (LNA) fabricated with the 40-nm CMOS process to optimize the insertion loss of the input transformer-based balun. Thanks to the approach, the $W$ -band LNA achieves a minimum noise figure of 5.7 dB, a maximum gain of 18.5 dB, and a 3-dB bandwidth of 76.5–92.6 GHz, while consuming 23.4 mW from a 0.9-V supply.
本文提出了一种基于双端口kQ -product理论的简便方法来分析绕组间电容耦合对变压器效率的影响。结果表明,适当尺寸的变压器可以利用绕线电容耦合在所需频率下实现效率最大化。将该设计方法应用于40纳米CMOS工艺制造的W波段低噪声放大器(LNA)中,以优化基于输入变压器的平衡器的插入损耗。由于采用了这种方法,W波段LNA的最小噪声系数为5.7 dB,最大增益为18.5 dB, 3db带宽为76.5-92.6 GHz,同时从0.9 v电源消耗23.4 mW。
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引用次数: 2
A-EFIE With Model-Order Reduction Technique for Fast Analysis of Circuit Simulation 基于模型降阶技术的A-EFIE电路仿真快速分析
IF 3 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-10-01 DOI: 10.1109/LMWC.2022.3174657
Wen-Jing Chen, Shengze Sun, L. Lei, Jun Hu
A fast frequency-sweep method for microwave circuit simulation based on a full-wave solver is presented in this letter. The complexity of the mathematical model of the augmented electric field integral equation (A-EFIE) system is reduced by employing the model-order reduction (MOR) technique, where the reduced-order subspace is constructed by singular value decomposition (SVD). Compared to the A-EFIE with the asymptotic waveform evaluation (AWE) technique, the A-EIFE with the SVD-based MOR technique can speed up the broadband circuit analysis more efficiently.
本文提出了一种基于全波解算器的微波电路快速扫频仿真方法。采用模型降阶(MOR)技术,通过奇异值分解(SVD)构造降阶子空间,降低了增广电场积分方程(A-EFIE)系统数学模型的复杂性。与具有渐近波形评估(AWE)技术的A-EFIE相比,具有基于SVD的MOR技术的A-EIFE可以更有效地加速宽带电路分析。
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引用次数: 0
Design of 50-GHz Low Phase Noise VCO Employing Two-Branches DGS Resonator in 0.18-μm CMOS Technology 0.18μm CMOS技术中采用双分支DGS谐振腔的50GHz低相位噪声VCO的设计
IF 3 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-10-01 DOI: 10.1109/LMWC.2022.3171405
Baichuan Chen, R. Pokharel, Samundra K. Thapa, Nusrat Jahan, A. Barakat
This letter presents a $V$ -band low phase noise voltage-controlled oscillator (VCO) design using a novel integrated two-branches defected ground structure (DGS) resonator in 0.18- $mu text{m}$ complementary metal-oxide-semiconductor (CMOS) technology. The proposed DGS resonator is realized in the top metal layer (M6) which has not only a higher quality factor than its predecessors but is also effective to reduce the length of interconnects. The measured carrier frequency and phase noise are 49 GHz and −122.05 dBc/Hz (−102.58 dBc/Hz) at 10-MHz (1-MHz) offset frequencies, respectively. The VCO core consumes 5.5 mW of dc power from the dc supply, which results in a figure of merit (FoM) of −189 dBc/Hz. The proposed VCO using the two-branches DGS resonator may give an alternative low-cost solution for designing a high-performance VCO or frequency synthesizer at $V$ -band and beyond.
这封信介绍了一种$V$波段低相位噪声压控振荡器(VCO)的设计,该振荡器使用0.18-$mutext{m}$互补金属氧化物半导体(CMOS)技术中的新型集成双分支缺陷接地结构(DGS)谐振器。所提出的DGS谐振器在顶部金属层(M6)中实现,其不仅具有比其前任更高的品质因数,而且还有效地减少了互连的长度。在10 MHz(1-MHz)偏移频率下,测得的载波频率和相位噪声分别为49 GHz和−122.05 dBc/Hz(−102.58 dBc/Hz)。VCO核心消耗来自直流电源的5.5 mW直流功率,从而产生−189 dBc/Hz的品质因数(FoM)。所提出的使用两个分支DGS谐振器的VCO可以为设计$V$-频带及以上的高性能VCO或频率合成器提供另一种低成本的解决方案。
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引用次数: 0
A Novel Dual-Band Waveguide Filter With Multiple Transmission Zeros Based on TE102- and TE103-Modes 一种基于TE102和te103模式的新型多传输零双带波导滤波器
IF 3 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-10-01 DOI: 10.1109/LMWC.2022.3175993
Yong Wu, Q. Zeng
In this letter, the authors propose a novel dual-band waveguide filter with multiple transmission zeros (TZs) based on multi-coupled resonators in the rectangular waveguide using TE102- and TE103-modes. The dual-band of the filter is implemented by five oversized resonant cavities working in TE102- and TE103-modes with the central frequencies of the pass-bands close to 30.1 and 38.2 GHz, respectively. This rectangular waveguide filter consists of five resonators, each of which is connected to the source port through the narrow wall of the WR-28 rectangular waveguide, generating multiple TZs in the frequency range 26–40 GHz. To verify the performance of this novel filter, a prototype of it is fabricated and measured, achieving a good agreement between the simulated and measured results.
在这封信中,作者提出了一种新的具有多个传输零点(TZ)的双频带波导滤波器,该滤波器基于使用TE102和TE103模式的矩形波导中的多耦合谐振器。滤波器的双频带由五个在TE102和TE103模式下工作的超大谐振腔实现,通带的中心频率分别接近30.1和38.2GHz。该矩形波导滤波器由五个谐振器组成,每个谐振器通过WR-28矩形波导的窄壁连接到源端口,在26–40 GHz的频率范围内产生多个TZ。为了验证这种新型滤波器的性能,制作了一个原型滤波器并进行了测试,仿真结果与测试结果吻合良好。
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引用次数: 2
Near-Field Compensation for Coherent Radar Networks 相干雷达网络的近场补偿
IF 3 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-10-01 DOI: 10.1109/LMWC.2022.3170721
Benedikt Meinecke, David Werbunat, Qasim Haidari, Matthias Linder, C. Waldschmidt
With radar networks, the resolution of critical radar parameters such as Doppler and angle can be improved compared to a single radar sensor. As the network’s aperture is considerably larger than that of a single radar, a much higher angular resolution is achieved. However, with a large aperture, range-dependent phase deviations, that is, near-field effects, occur and affect the angle estimation. In this work, these near-field effects are evaluated exemplarily for a coherent network. Furthermore, a new strategy to compensate for those network near-field effects is proposed and demonstrated based on measurements. The benefits of the near-field compensation are emphasized by comparing the network’s angle-estimation capabilities with and without compensated near-field effects.
与单个雷达传感器相比,雷达网络可以提高关键雷达参数(如多普勒和角度)的分辨率。由于网络孔径比单个雷达孔径大得多,因此可以获得更高的角分辨率。然而,当孔径较大时,会产生与距离相关的相位偏差,即近场效应,并影响角度估计。在这项工作中,这些近场效应评估了一个相干网络的例子。在此基础上,提出了一种补偿网络近场效应的新策略,并进行了实测验证。通过比较有和没有补偿近场效应的网络角度估计能力,强调了近场补偿的好处。
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引用次数: 1
Harmonic RFID Temperature Sensor Design for Harsh Environments 恶劣环境下的谐波RFID温度传感器设计
IF 3 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-10-01 DOI: 10.1109/LMWC.2022.3172027
T. Silveira, P. Pinho, N. Carvalho
This letter presents a new passive sensor for temperature measurements based on a harmonic radio-frequency identification (RFID) tag that uses the temperature sensitivity of Schottky diodes as the main component for the generation of harmonics. The design of the harmonic sensor is based on the fact that the diode is a nonlinear device that when excited at one fundamental frequency generates harmonics of that signal. In this case, the generation mechanism is sensitive to temperature due to the diode thermal voltage variation with temperature. Measurements prove the performance of the sensor.
本文介绍了一种基于谐波射频识别(RFID)标签的新型无源温度测量传感器,该标签使用肖特基二极管的温度灵敏度作为产生谐波的主要组件。谐波传感器的设计是基于这样一个事实,即二极管是一个非线性器件,当在一个基频上激发时,会产生该信号的谐波。在这种情况下,由于二极管热电压随温度变化,产生机制对温度敏感。测量结果证明了传感器的性能。
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引用次数: 4
A Novel Over-Push Gain-Boosting Technique for Embedded Amplifier at Near-fmax Frequencies 一种新的近fmax频率下嵌入式放大器过推增益提升技术
IF 3 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-10-01 DOI: 10.1109/LMWC.2022.3176465
Fei He, Qian Xie, Meng Ni, Zheng Wang
In this letter, a novel over-push method is proposed to improve the power gain of amplifiers with an embedding network and a lossy matching network (MN) at near- $f_{mathrm {max}}$ frequency. The gain-plane approach has been employed to study the change of the maximum available gain when adding the lossy MN to the embedded core. The proposed over-push method can effectively improve the power gain by compensating the effect of the lossy MN to the maximum available gain of an embedded core. To verify the proposed method, a three-stage amplifier has been implemented in a 65-nm CMOS process with a measured power gain of 17.1 dB at 134 GHz.
在这封信中,提出了一种新的过推方法,以提高具有嵌入网络和有损匹配网络(MN)的放大器在接近-$f_{mathrm{max}}$频率下的功率增益。增益平面方法已被用于研究当将有损MN添加到嵌入式核心时最大可用增益的变化。所提出的过推方法可以通过将有损MN的影响补偿到嵌入式内核的最大可用增益来有效地提高功率增益。为了验证所提出的方法,在65nm CMOS工艺中实现了一个三级放大器,在134GHz下测得的功率增益为17.1dB。
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引用次数: 1
A Broadband PA Design Based on Bayesian Optimization Augmented by Dynamic Feasible Region Shrinkage 基于动态可行域收缩增强贝叶斯优化的宽带PA设计
IF 3 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-10-01 DOI: 10.1109/LMWC.2022.3173441
Yan Qu, G. Crupi, Jialin Cai
In this letter, a new Bayesian optimization (BO) method with dynamic feasible region shrinkage (DFRS) technique for power amplifier (PA) design is proposed. As a powerful optimization tool, it provides a more effective way to optimize the performance of PA than the embedded commercial optimization tools. It also has a better convergence speed than the existing fixed mode acquisition function. Results show that the new technique provides a great optimization for PA design, not only for circuit optimization but also for electromagnetic (EM) optimization.
本文提出了一种新的基于动态可行域收缩(DFRS)技术的功率放大器设计贝叶斯优化(BO)方法。作为一种强大的优化工具,它为优化PA的性能提供了一种比嵌入式商业优化工具更有效的方法。它还具有比现有的固定模式采集功能更好的收敛速度。结果表明,该新技术不仅为电路优化,而且为电磁优化提供了很大的优化。
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引用次数: 10
IEEE Microwave and Wireless Components Letters Publication Information IEEE微波与无线元件通讯出版信息
IF 3 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-09-02 DOI: 10.1109/lmwc.2022.3198205
Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.
列出本刊的编辑委员会、理事会、现任工作人员、委员会成员和/或社团编辑。
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引用次数: 0
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IEEE Microwave and Wireless Components Letters
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