Pub Date : 2025-06-16DOI: 10.1109/JQE.2025.3579731
Nobuhide Yokota;Hiroshi Yasaka
The optical negative-feedback laser monolithically integrated on an InP substrate for obtaining narrow linewidth is investigated. Optical negative feedback (ONF) induced by reflection of light from a Fabry-Perot (FP) resonator reduces linewidth of a distributed Bragg reflector (DBR) laser by 1/14 compared to that of a free-running DBR laser. The measured reflectivity of the fabricated ONF laser is compared to reflectivity simulated with an effective reflectivity model. It is demonstrated that control of the feedback phase is necessary to reduce linewidth by exploiting optical negative feedback. Linewidth is expected to be further reduced by using an FP resonator with a higher quality factor. It is also demonstrated that ONF lasers are compatible with fabrication in the InP foundry platform.
{"title":"Monolithically Integrated Narrow-Linewidth Optical-Negative-Feedback Lasers","authors":"Nobuhide Yokota;Hiroshi Yasaka","doi":"10.1109/JQE.2025.3579731","DOIUrl":"https://doi.org/10.1109/JQE.2025.3579731","url":null,"abstract":"The optical negative-feedback laser monolithically integrated on an InP substrate for obtaining narrow linewidth is investigated. Optical negative feedback (ONF) induced by reflection of light from a Fabry-Perot (FP) resonator reduces linewidth of a distributed Bragg reflector (DBR) laser by 1/14 compared to that of a free-running DBR laser. The measured reflectivity of the fabricated ONF laser is compared to reflectivity simulated with an effective reflectivity model. It is demonstrated that control of the feedback phase is necessary to reduce linewidth by exploiting optical negative feedback. Linewidth is expected to be further reduced by using an FP resonator with a higher quality factor. It is also demonstrated that ONF lasers are compatible with fabrication in the InP foundry platform.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We experimentally demonstrated a high-power 16-wavelength DFB laser array with 1.6 nm (200 GHz) channel spacing based on the asymmetric equivalent $pi $ phase shift ($pi $ -EPS). The $pi $ -EPS is positioned at 1/5 of the laser cavity length near the facet with a high-reflection (HR) coating, enhancing the yield of single longitudinal mode (SLM) operation. The measured channel spacing is 1.6 nm $pm ~0.1$ nm at a bias current of 250 mA. The array’s output power exceeds 120 mW for each channel at 400 mA. The SLM performance is achieved, with side mode suppression ratios (SMSRs) greater than 50 dB at room temperature. Furthermore, at 70 mA bias current, the relative intensity noise (RIN) remains below -160 dB/Hz. These results suggest that this laser array holds significant potential for large-scale silicon photonics applications. Therefore, the proposed laser array will be beneficial to the applications of large-scale silicon photonics.
{"title":"High-Power Multi-Wavelength Laser Array With Uniform Spacing Based on Asymmetric Equivalent π Phase Shift","authors":"Yuxin Ma;Yong Zhao;Zhenxing Sun;Ziming Hong;Cheng Peng;Zhenzhen Xu;Xin Wang;Lianping Hou;Yuechun Shi;Pu Li;Yuncai Wang;Xiangfei Chen","doi":"10.1109/JQE.2025.3577557","DOIUrl":"https://doi.org/10.1109/JQE.2025.3577557","url":null,"abstract":"We experimentally demonstrated a high-power 16-wavelength DFB laser array with 1.6 nm (200 GHz) channel spacing based on the asymmetric equivalent <inline-formula> <tex-math>$pi $ </tex-math></inline-formula> phase shift (<inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-EPS). The <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-EPS is positioned at 1/5 of the laser cavity length near the facet with a high-reflection (HR) coating, enhancing the yield of single longitudinal mode (SLM) operation. The measured channel spacing is 1.6 nm <inline-formula> <tex-math>$pm ~0.1$ </tex-math></inline-formula> nm at a bias current of 250 mA. The array’s output power exceeds 120 mW for each channel at 400 mA. The SLM performance is achieved, with side mode suppression ratios (SMSRs) greater than 50 dB at room temperature. Furthermore, at 70 mA bias current, the relative intensity noise (RIN) remains below -160 dB/Hz. These results suggest that this laser array holds significant potential for large-scale silicon photonics applications. Therefore, the proposed laser array will be beneficial to the applications of large-scale silicon photonics.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144831790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-06DOI: 10.1109/JQE.2025.3577472
Qing Meng;Jiasheng Fu;Zhongying Xue;Ziao Tian;Yan Cai;Miao Zhang;Zheng Wang;Zengfeng Di
Optical phase modulators are critical components in integrated photonic systems operating at visible wavelengths. However, current solutions to integrated optical phase modulators at visible wavelengths face challenges such as high insertion losses, large footprints, low bandwidth, and high-power consumption. In this work, we introduce a graphene-based integrated optical phase modulator designed for operation at 488 nm, implemented on silicon nitride photonic integrated circuits. This design aligns seamlessly with standard silicon photonic processes. The 3-dB bandwidth of the integrated optical phase modulator ranges from 3 GHz to 148 GHz depending on design and fabrication conditions, and a 74 GHz 3-dB bandwidth is considered achievable based on previously published results. Meanwhile, a modulation efficiency (quantified by the product of the $pi $ -phase shift voltage and length, $boldsymbol {V_{mathrm {pi }}L}$ ) of 0.13 V$cdot $ cm could be attained. Moreover, the modulator is capable of operating across the entire visible wavelength range. This investigation presents a compact, high-speed solution to integrated optical phase modulators at visible wavelengths, facilitating a broad range of applications in the visible spectrum.
{"title":"Graphene-Based Integrated Optical Phase Modulator at Visible Wavelengths","authors":"Qing Meng;Jiasheng Fu;Zhongying Xue;Ziao Tian;Yan Cai;Miao Zhang;Zheng Wang;Zengfeng Di","doi":"10.1109/JQE.2025.3577472","DOIUrl":"https://doi.org/10.1109/JQE.2025.3577472","url":null,"abstract":"Optical phase modulators are critical components in integrated photonic systems operating at visible wavelengths. However, current solutions to integrated optical phase modulators at visible wavelengths face challenges such as high insertion losses, large footprints, low bandwidth, and high-power consumption. In this work, we introduce a graphene-based integrated optical phase modulator designed for operation at 488 nm, implemented on silicon nitride photonic integrated circuits. This design aligns seamlessly with standard silicon photonic processes. The 3-dB bandwidth of the integrated optical phase modulator ranges from 3 GHz to 148 GHz depending on design and fabrication conditions, and a 74 GHz 3-dB bandwidth is considered achievable based on previously published results. Meanwhile, a modulation efficiency (quantified by the product of the <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-phase shift voltage and length, <inline-formula> <tex-math>$boldsymbol {V_{mathrm {pi }}L}$ </tex-math></inline-formula>) of 0.13 V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm could be attained. Moreover, the modulator is capable of operating across the entire visible wavelength range. This investigation presents a compact, high-speed solution to integrated optical phase modulators at visible wavelengths, facilitating a broad range of applications in the visible spectrum.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144472549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-05DOI: 10.1109/JQE.2025.3571567
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2025.3571567","DOIUrl":"https://doi.org/10.1109/JQE.2025.3571567","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"C3-C3"},"PeriodicalIF":2.2,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11026767","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144219642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-05DOI: 10.1109/JQE.2025.3564745
{"title":"Analysis of Curved Optical Waveguides by Conformal Transformation","authors":"","doi":"10.1109/JQE.2025.3564745","DOIUrl":"https://doi.org/10.1109/JQE.2025.3564745","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144219709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-05DOI: 10.1109/JQE.2025.3563066
John M. Dallesasse
{"title":"JQE 60th Anniversary: The 70’s","authors":"John M. Dallesasse","doi":"10.1109/JQE.2025.3563066","DOIUrl":"https://doi.org/10.1109/JQE.2025.3563066","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-2"},"PeriodicalIF":2.2,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11026818","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144219703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-05DOI: 10.1109/JQE.2025.3564698
{"title":"Coupled-Mode Theory for Guided-Wave Optics","authors":"","doi":"10.1109/JQE.2025.3564698","DOIUrl":"https://doi.org/10.1109/JQE.2025.3564698","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-15"},"PeriodicalIF":2.2,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144219702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-02DOI: 10.1109/JQE.2025.3575605
H. Ahmad;L. Lohano;B. Nizamani;M. Z. Samion;M. F. Ismail
This work experimentally demonstrates a single-longitudinal-mode (SLM) based narrow linewidth tunable dual-wavelength erbium-doped fiber (EDF) laser. The dual-wavelength at 1550.01 ($lambda _{1}$ ) and 1550.17 ($lambda _{2}$ ) nm with a free spectral range (FSR) of 0.16 nm was obtained by incorporating an in-line comb filter based on the six-mode fiber. The SLM operation was observed by integrating a double-ring compound cavity (DRCC) filter, which helps to achieve a narrow linewidth dual-wavelength with a high optical signal-to-noise ratio (OSNR) of around 71 dB. A stable dual-wavelength fiber laser with power fluctuation and wavelength drift of less than 0.5 dB and 0.02 nm was obtained. The proposed laser offers a broader tunability range of 44 nm. Furthermore, the performance of SLM was examined with and without the DRCC filter and unpumped EDF, where the unpumped EDF was utilized as the saturable absorber (SA) to control the mode fluctuation and enhance the stability. The linewidth of $lambda _{1}$ and $lambda _{2}$ was measured using the delayed self-heterodyne technique (DSH), where the narrow linewidths around 496 and 479 Hz were obtained for $lambda _{1}$ and $lambda _{2}$ , respectively.
{"title":"Widely Tunable Narrow Linewidth Dual-Wavelength Fiber Laser Using In-Line Six-Mode Fiber Filter With a Double-Ring Compound Cavity (DRCC)","authors":"H. Ahmad;L. Lohano;B. Nizamani;M. Z. Samion;M. F. Ismail","doi":"10.1109/JQE.2025.3575605","DOIUrl":"https://doi.org/10.1109/JQE.2025.3575605","url":null,"abstract":"This work experimentally demonstrates a single-longitudinal-mode (SLM) based narrow linewidth tunable dual-wavelength erbium-doped fiber (EDF) laser. The dual-wavelength at 1550.01 (<inline-formula> <tex-math>$lambda _{1}$ </tex-math></inline-formula>) and 1550.17 (<inline-formula> <tex-math>$lambda _{2}$ </tex-math></inline-formula>) nm with a free spectral range (FSR) of 0.16 nm was obtained by incorporating an in-line comb filter based on the six-mode fiber. The SLM operation was observed by integrating a double-ring compound cavity (DRCC) filter, which helps to achieve a narrow linewidth dual-wavelength with a high optical signal-to-noise ratio (OSNR) of around 71 dB. A stable dual-wavelength fiber laser with power fluctuation and wavelength drift of less than 0.5 dB and 0.02 nm was obtained. The proposed laser offers a broader tunability range of 44 nm. Furthermore, the performance of SLM was examined with and without the DRCC filter and unpumped EDF, where the unpumped EDF was utilized as the saturable absorber (SA) to control the mode fluctuation and enhance the stability. The linewidth of <inline-formula> <tex-math>$lambda _{1}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$lambda _{2}$ </tex-math></inline-formula> was measured using the delayed self-heterodyne technique (DSH), where the narrow linewidths around 496 and 479 Hz were obtained for <inline-formula> <tex-math>$lambda _{1}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$lambda _{2}$ </tex-math></inline-formula>, respectively.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-9"},"PeriodicalIF":2.1,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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