Pub Date : 2012-08-01DOI: 10.1109/3M-NANO.2012.6472947
C. Diederichs, S. Zimmermann, S. Fatikow
Object-detection and classification is a key task in micro- and nanohandling. The microscopy image is often the only available sensor to detect information about the positions and orientations of objects. Recently, Field Programmable Gate Arrays (FPGAs) have been used for scanning electron microscope (SEM) image acquisition. Such an FPGA image acquisition system is extended to perform basic image processing and on-line object detection. The connected component labeling algorithm for binary large object detection is presented and analyzed for its feasibility in terms of on-line object detection and classification. The features of binary large objects are discussed and analyzed for their feasibility with a single-pass connected component labeling approach, with focus on principal component analysis based features. It is shown that an FPGA implementation of the algorithm can be used to detect and classify carbon-nanotubes (CNTs) during image acquisition, allowing for fast object detection before the whole image is captured.
{"title":"FPGA-based object detection and classification inside scanning electron microscopes","authors":"C. Diederichs, S. Zimmermann, S. Fatikow","doi":"10.1109/3M-NANO.2012.6472947","DOIUrl":"https://doi.org/10.1109/3M-NANO.2012.6472947","url":null,"abstract":"Object-detection and classification is a key task in micro- and nanohandling. The microscopy image is often the only available sensor to detect information about the positions and orientations of objects. Recently, Field Programmable Gate Arrays (FPGAs) have been used for scanning electron microscope (SEM) image acquisition. Such an FPGA image acquisition system is extended to perform basic image processing and on-line object detection. The connected component labeling algorithm for binary large object detection is presented and analyzed for its feasibility in terms of on-line object detection and classification. The features of binary large objects are discussed and analyzed for their feasibility with a single-pass connected component labeling approach, with focus on principal component analysis based features. It is shown that an FPGA implementation of the algorithm can be used to detect and classify carbon-nanotubes (CNTs) during image acquisition, allowing for fast object detection before the whole image is captured.","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121849168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-08-01DOI: 10.1109/3M-NANO.2012.6472978
H. Al-Mumen, F. Rao, Lixin Dong, Wen Li
This paper reports simple fabrication approaches that can be used to generate a suspended graphene sheet with the desired thickness, while eliminating the need for a crytical point dryer. Two methods have been developed to achieve a large suspended area of graphenes. In the first approach, SF6 plasma was used to make holes or channels with specific dimensions. Then micromechanical exfoliation was applied to deposit the graphene sheet suspended over these channels or holes. In the second method, we used SF6 plasma to make suspended graphenes by undercutting planar graphenes. To tune the number of graphene layers, thick graphene samples was etched layer by layer until the desired thickness was obtained. Additionally, the effect of using various plasmas etching (SF6 or O2) on the layer-by-layer graphene removal has been studied. Raman spectra of plasma-treated graphenes have shown higher amount of defects in case of SF6, specially for thin graphene sheet. However, these surface defects could be recovered by annealing the samples in an argon environment at about 1000 °C.
{"title":"Towards simple methods for mass production of suspended graphene","authors":"H. Al-Mumen, F. Rao, Lixin Dong, Wen Li","doi":"10.1109/3M-NANO.2012.6472978","DOIUrl":"https://doi.org/10.1109/3M-NANO.2012.6472978","url":null,"abstract":"This paper reports simple fabrication approaches that can be used to generate a suspended graphene sheet with the desired thickness, while eliminating the need for a crytical point dryer. Two methods have been developed to achieve a large suspended area of graphenes. In the first approach, SF6 plasma was used to make holes or channels with specific dimensions. Then micromechanical exfoliation was applied to deposit the graphene sheet suspended over these channels or holes. In the second method, we used SF6 plasma to make suspended graphenes by undercutting planar graphenes. To tune the number of graphene layers, thick graphene samples was etched layer by layer until the desired thickness was obtained. Additionally, the effect of using various plasmas etching (SF6 or O2) on the layer-by-layer graphene removal has been studied. Raman spectra of plasma-treated graphenes have shown higher amount of defects in case of SF6, specially for thin graphene sheet. However, these surface defects could be recovered by annealing the samples in an argon environment at about 1000 °C.","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128612679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-08-01DOI: 10.1109/3M-NANO.2012.6472967
Ke Xu, Chengdong Wu, Xiaojun Tian, Haibo Yu, Z. Dong
This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimental research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices were assembled less than per square centimeter. The experimental results showed that large-scale assembly was realized, and the success rate of ideal assembly for SWCNTs FET is achieved.
{"title":"Large-scale assembly of single-walled carbon nanotube field effect transistor","authors":"Ke Xu, Chengdong Wu, Xiaojun Tian, Haibo Yu, Z. Dong","doi":"10.1109/3M-NANO.2012.6472967","DOIUrl":"https://doi.org/10.1109/3M-NANO.2012.6472967","url":null,"abstract":"This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimental research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices were assembled less than per square centimeter. The experimental results showed that large-scale assembly was realized, and the success rate of ideal assembly for SWCNTs FET is achieved.","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129690238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-08-01DOI: 10.1109/3M-NANO.2012.6473008
Y. Leng, Lianhe Dong, Yanjun Sun, Zhe Chen, Z. Ma
Combining the pressure sensor's oxidation insulating nanostructure fabrication this paper studied the impact of bias voltage, ambient temperature and humidity on the size of oxide dots during the AFM-based anodic oxidation nano-fabrication. Experimental results show that the size of oxide dots increases with the increasing bias voltage and ambient humidity, but too high bias voltage and ambient temperature will cause staircase phenomena on the surface of oxide dot; ambient temperature 22 °C, bias voltage 8V, humidity 50% and oxidation time 8s are relatively suitable processing parameters for the oxidation fabrication of n-type Si (100).
{"title":"Influence of processing parameter on nanoscale anodic oxidation by AFM","authors":"Y. Leng, Lianhe Dong, Yanjun Sun, Zhe Chen, Z. Ma","doi":"10.1109/3M-NANO.2012.6473008","DOIUrl":"https://doi.org/10.1109/3M-NANO.2012.6473008","url":null,"abstract":"Combining the pressure sensor's oxidation insulating nanostructure fabrication this paper studied the impact of bias voltage, ambient temperature and humidity on the size of oxide dots during the AFM-based anodic oxidation nano-fabrication. Experimental results show that the size of oxide dots increases with the increasing bias voltage and ambient humidity, but too high bias voltage and ambient temperature will cause staircase phenomena on the surface of oxide dot; ambient temperature 22 °C, bias voltage 8V, humidity 50% and oxidation time 8s are relatively suitable processing parameters for the oxidation fabrication of n-type Si (100).","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125536380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-08-01DOI: 10.1109/3M-NANO.2012.6472950
Long Hua, Bingjun Yu, Chen Song, L. Qian, Zhongrong Zhou
With an atomic force microscope, friction and wear behaviors of the friction induced hillocks on monocrystalline silicon were investigated. With the increase of normal load from one to twelve microNewtown, the friction force on silicon substrate showed a sharp increase at eight microNewtown, while the friction force on the hillocks kept a stably linear increase. Since no scratch damage was detected on the hillock below a contact pressure of ten point three gigaPascal, the friction induced hillocks on silicon can withstand the typical contact and sliding in dynamic devices. It was also noted that the friction induced hillock presented anisotropic friction and wear behaviors during scratching. The sliding parallel to the scanning direction for producing the hillock can reduce the friction in dynamic devices. This study can shed new light on potential application of the friction induced nanostructures.
{"title":"Nanotribological behaviors of friction-induced hillocks on monocrystalline silicon","authors":"Long Hua, Bingjun Yu, Chen Song, L. Qian, Zhongrong Zhou","doi":"10.1109/3M-NANO.2012.6472950","DOIUrl":"https://doi.org/10.1109/3M-NANO.2012.6472950","url":null,"abstract":"With an atomic force microscope, friction and wear behaviors of the friction induced hillocks on monocrystalline silicon were investigated. With the increase of normal load from one to twelve microNewtown, the friction force on silicon substrate showed a sharp increase at eight microNewtown, while the friction force on the hillocks kept a stably linear increase. Since no scratch damage was detected on the hillock below a contact pressure of ten point three gigaPascal, the friction induced hillocks on silicon can withstand the typical contact and sliding in dynamic devices. It was also noted that the friction induced hillock presented anisotropic friction and wear behaviors during scratching. The sliding parallel to the scanning direction for producing the hillock can reduce the friction in dynamic devices. This study can shed new light on potential application of the friction induced nanostructures.","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121443841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-08-01DOI: 10.1109/3M-NANO.2012.6472926
Mi Li, Lianqing Liu, N. Xi, Yuechao Wang, Z. Dong, Xiubin Xiao, Weijing Zhang
The invention of atomic force microscopy (AFM) provides new technology for investigating the physiological activities at the single cell and single molecule levels. Lymphoma Raji cells were adsorbed onto the glass slides by coating the glass slides with poly-L-lysine. Rituximabs (anti-CD20 antibody) were linked onto the AFM tip by PEG linker and the CD20-Rituximab binding forces were measured on three lymphoma Raji cells. Then the mechanical properties of the Raji cells were dynamically measured after the Rituximab activation by obtaining force curves on the cell surface. The mechanical properties of lymphoma cells kept stable at the first 20-30 min, and then decreased markedly. Besides, as the CD20-Rituximab binding force increased, the mechanical properties decrease rate increased. The experimental results indicated that the Rituximab's effect is related to CD20-Rituximab binding force and can improve our understanding of Rituximab's variable efficacies in different patients.
{"title":"Investigating the relationship between CD20-Rituximab binding force and mechanical properties of Lymphom B cells using atomic force microscopy","authors":"Mi Li, Lianqing Liu, N. Xi, Yuechao Wang, Z. Dong, Xiubin Xiao, Weijing Zhang","doi":"10.1109/3M-NANO.2012.6472926","DOIUrl":"https://doi.org/10.1109/3M-NANO.2012.6472926","url":null,"abstract":"The invention of atomic force microscopy (AFM) provides new technology for investigating the physiological activities at the single cell and single molecule levels. Lymphoma Raji cells were adsorbed onto the glass slides by coating the glass slides with poly-L-lysine. Rituximabs (anti-CD20 antibody) were linked onto the AFM tip by PEG linker and the CD20-Rituximab binding forces were measured on three lymphoma Raji cells. Then the mechanical properties of the Raji cells were dynamically measured after the Rituximab activation by obtaining force curves on the cell surface. The mechanical properties of lymphoma cells kept stable at the first 20-30 min, and then decreased markedly. Besides, as the CD20-Rituximab binding force increased, the mechanical properties decrease rate increased. The experimental results indicated that the Rituximab's effect is related to CD20-Rituximab binding force and can improve our understanding of Rituximab's variable efficacies in different patients.","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131514947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-08-01DOI: 10.1109/3M-NANO.2012.6473010
Hong-quan Liu, Fei-Xiang Hao, Jie Guo, Yijie Gu, Qing-kun He, H. Cui
PbTe nanopowders with different morphology were prepared by a simple chemical synthesis. Similar cubic nanoparticles have been successfully synthesized by using Pb(NO3)2 and Na2TeO3 as the precursors, and NaBH4 as the reductant. The single PbTe phase is confirmed from XRD pattern, and obvious width of XRD peaks occur. The size of powders is distributed from 20nm to 70nm in a typical process according to observation from SEM and TEM images. Based on HRTEM observation, PbTe nanopowders with an amorphous layer show polyhedron feature. In different crystallization stages, there is different morphology due to competition between surface energy and crystal face energy. The globular, polyhedron and cubic particles belongs to different growth stages, respectively. Possible growth mechanisms of PbTe were also discussed.
{"title":"A simple synthesis and characterization of PbTe nano-particles","authors":"Hong-quan Liu, Fei-Xiang Hao, Jie Guo, Yijie Gu, Qing-kun He, H. Cui","doi":"10.1109/3M-NANO.2012.6473010","DOIUrl":"https://doi.org/10.1109/3M-NANO.2012.6473010","url":null,"abstract":"PbTe nanopowders with different morphology were prepared by a simple chemical synthesis. Similar cubic nanoparticles have been successfully synthesized by using Pb(NO3)2 and Na2TeO3 as the precursors, and NaBH4 as the reductant. The single PbTe phase is confirmed from XRD pattern, and obvious width of XRD peaks occur. The size of powders is distributed from 20nm to 70nm in a typical process according to observation from SEM and TEM images. Based on HRTEM observation, PbTe nanopowders with an amorphous layer show polyhedron feature. In different crystallization stages, there is different morphology due to competition between surface energy and crystal face energy. The globular, polyhedron and cubic particles belongs to different growth stages, respectively. Possible growth mechanisms of PbTe were also discussed.","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131702036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-08-01DOI: 10.1109/3M-NANO.2012.6472953
X. Gu, W. Liu, W. Zhang, F. Zhang, L. Yuan, Y. Y. Wang, C. Peng
Periodic sub-wavelength nanocones were simulated for antireflection with three different heights: 300, 500 and 700 nm on Si substrate. On the top of nanocones, we add a layer of Ni and SiO2 with the thicknesses of 10 nm, 20 nm and 30 nm. The reflective characteristics of nanostructures with or without nanomasks were studied by rigorous coupled-wave analysis (RCWA).
{"title":"Periodic sub-wavelength surface-relief structures for antireflection","authors":"X. Gu, W. Liu, W. Zhang, F. Zhang, L. Yuan, Y. Y. Wang, C. Peng","doi":"10.1109/3M-NANO.2012.6472953","DOIUrl":"https://doi.org/10.1109/3M-NANO.2012.6472953","url":null,"abstract":"Periodic sub-wavelength nanocones were simulated for antireflection with three different heights: 300, 500 and 700 nm on Si substrate. On the top of nanocones, we add a layer of Ni and SiO2 with the thicknesses of 10 nm, 20 nm and 30 nm. The reflective characteristics of nanostructures with or without nanomasks were studied by rigorous coupled-wave analysis (RCWA).","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124284871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-08-01DOI: 10.1109/3M-NANO.2012.6472975
Mohamed Kharboutly Alexandre Melis, A. Bolopion, N. Chaillet, Michaël Gauthier
Nanosciences have recently proposed a lot of proofs of concept of innovative nanocomponents and especially nanosensors. Going from the current proofs of concept on this scale to reliable industrial systems requires the emergence of a new generation of manufacturing methods able to move, position and sort micro-nano-components. We propose to develop `No Weight Robots-NWR' that use noncontact transmission of movement (e.g. dielectrophoresis, magnetophoresis) to manipulate micro-nano-objects which could enable simultaneous high throughput and high precision. This paper focuses on developing a 2D robotic control of the trajectory of a micro-object manipulated by a dielectrophoresis system. A 2D dynamic model is used to establish an open loop control law by a numerical inversion. Exploiting this control law, a high speed trajectory tracking (10 Hz) and high precision positioning can be achieved. Several simulated and experimental results are shown to evaluate this control strategy and discuss its performance.
{"title":"2D robotic control of a planar dielectrophoresis-based system","authors":"Mohamed Kharboutly Alexandre Melis, A. Bolopion, N. Chaillet, Michaël Gauthier","doi":"10.1109/3M-NANO.2012.6472975","DOIUrl":"https://doi.org/10.1109/3M-NANO.2012.6472975","url":null,"abstract":"Nanosciences have recently proposed a lot of proofs of concept of innovative nanocomponents and especially nanosensors. Going from the current proofs of concept on this scale to reliable industrial systems requires the emergence of a new generation of manufacturing methods able to move, position and sort micro-nano-components. We propose to develop `No Weight Robots-NWR' that use noncontact transmission of movement (e.g. dielectrophoresis, magnetophoresis) to manipulate micro-nano-objects which could enable simultaneous high throughput and high precision. This paper focuses on developing a 2D robotic control of the trajectory of a micro-object manipulated by a dielectrophoresis system. A 2D dynamic model is used to establish an open loop control law by a numerical inversion. Exploiting this control law, a high speed trajectory tracking (10 Hz) and high precision positioning can be achieved. Several simulated and experimental results are shown to evaluate this control strategy and discuss its performance.","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116876492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-08-01DOI: 10.1109/3M-NANO.2012.6472995
T. Roinila, Xiao Yu, A. Gao, Tie Li, J. Verho, M. Vilkko, P. Kallio, Yuelin Wang, J. Lekkala
Development of miniaturized devices that enable rapid and direct recognition of small molecules has become a growing research area in various fields of nanotechnology. Silicon nanowire-based field-effect transistors (SiNW FETs) have been experimentally demonstrated for direct, label free, highly selective, and real-time detection of biological and chemical targets at very low concentrations. The detection of a target is based on the variation of conductance of the nanowire channel which is seen in the voltage-current behavior between the drain and source. Some current, known as leakage current, flows between the gate and drain, and affects the current between the drain and source in noise-like manner. The current is extremely low at DC, and can be ignored in most cases. Recent studies suggest, however, that the leakage current is likely to exhibit frequency-dependent characteristics. Recognizing such properties can possibly take great advantage in developing new detection technologies utilizing SiNW FETs. This paper applies the maximum-length binary sequence (MLBS) and spectrum method, and presents fast frequency-domain methods which can be used to measure and characterize the leakage current. Experimental measurements are shown from an n-type SiNW FET. The results clearly indicate the existence of the mentioned frequency-dependent characteristics.
{"title":"Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences","authors":"T. Roinila, Xiao Yu, A. Gao, Tie Li, J. Verho, M. Vilkko, P. Kallio, Yuelin Wang, J. Lekkala","doi":"10.1109/3M-NANO.2012.6472995","DOIUrl":"https://doi.org/10.1109/3M-NANO.2012.6472995","url":null,"abstract":"Development of miniaturized devices that enable rapid and direct recognition of small molecules has become a growing research area in various fields of nanotechnology. Silicon nanowire-based field-effect transistors (SiNW FETs) have been experimentally demonstrated for direct, label free, highly selective, and real-time detection of biological and chemical targets at very low concentrations. The detection of a target is based on the variation of conductance of the nanowire channel which is seen in the voltage-current behavior between the drain and source. Some current, known as leakage current, flows between the gate and drain, and affects the current between the drain and source in noise-like manner. The current is extremely low at DC, and can be ignored in most cases. Recent studies suggest, however, that the leakage current is likely to exhibit frequency-dependent characteristics. Recognizing such properties can possibly take great advantage in developing new detection technologies utilizing SiNW FETs. This paper applies the maximum-length binary sequence (MLBS) and spectrum method, and presents fast frequency-domain methods which can be used to measure and characterize the leakage current. Experimental measurements are shown from an n-type SiNW FET. The results clearly indicate the existence of the mentioned frequency-dependent characteristics.","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122230484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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