Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472418
M. Leong, J. McCallum, K. K. Lee, G. Impellizzeri, L. Romano
The development of processes involving amorphous germanium for electronic and photonic applications is investigated.
研究了非晶态锗在电子和光子方面的应用。
{"title":"Characterisation of solid-phase-epitaxy of amorphous germanium thin-films","authors":"M. Leong, J. McCallum, K. K. Lee, G. Impellizzeri, L. Romano","doi":"10.1109/COMMAD.2012.6472418","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472418","url":null,"abstract":"The development of processes involving amorphous germanium for electronic and photonic applications is investigated.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123917048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472435
P. Jansz, S. Hinckley
Simulated backwall U/V blue illuminated double junction photodiode (DJPD) pixels demonstrate excellent crosstalk and sensitivity when substrate, guard and image wells were doped more highly and biased minimally. This configuration minimized each guard and image well depletion region (SCR) width, soSimulated backwall U/V blue illuminated double junction photodiode (DJPD) pixels demonstrate excellent crosstalk and sensitivity when substrate, guard and image wells were doped more highly and biased minimally. This configuration minimized each guard and image well depletion region (SCR) width, so that the image SCR could be presented as close as possible to the back wall without the guard and image SCRs overlapping between and within pixels. that the image SCR could be presented as close as possible to the back wall without the guard and image SCRs overlapping between and within pixels.
{"title":"Enhanced UV-blue response of back illuminated deep double junction CMOS compatible photodiode pixels; a simulation study of high resolution pixel arrays","authors":"P. Jansz, S. Hinckley","doi":"10.1109/COMMAD.2012.6472435","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472435","url":null,"abstract":"Simulated backwall U/V blue illuminated double junction photodiode (DJPD) pixels demonstrate excellent crosstalk and sensitivity when substrate, guard and image wells were doped more highly and biased minimally. This configuration minimized each guard and image well depletion region (SCR) width, soSimulated backwall U/V blue illuminated double junction photodiode (DJPD) pixels demonstrate excellent crosstalk and sensitivity when substrate, guard and image wells were doped more highly and biased minimally. This configuration minimized each guard and image well depletion region (SCR) width, so that the image SCR could be presented as close as possible to the back wall without the guard and image SCRs overlapping between and within pixels. that the image SCR could be presented as close as possible to the back wall without the guard and image SCRs overlapping between and within pixels.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116107074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472362
J. Deng, J. Z. Liu, N. Medhekar
The edge stresses, which are responsible for all physical properties of nanoribbons, always involve two sided non-equivalent edge effects for zigzag honeycomb nanoribbons of two dimensional binary compounds such as BN and MoS2. In present work, we develop an approach to determine the edge stresses of individual non-equivalent zigzag edges. For prototypical system of BN zigzag nanoribbon, the edge stresses of N-terminated and B-terminated zigzag edge are determined. Using this approach, even the edge stresses for particular passivated edges observed in MoS2 nanoribbons are able to be obtained as well. The key results presented here are published in Ref. [1].
{"title":"Non-equivalent zigzag edge stresses for 2D binary compound honeycomb nanoribbons","authors":"J. Deng, J. Z. Liu, N. Medhekar","doi":"10.1109/COMMAD.2012.6472362","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472362","url":null,"abstract":"The edge stresses, which are responsible for all physical properties of nanoribbons, always involve two sided non-equivalent edge effects for zigzag honeycomb nanoribbons of two dimensional binary compounds such as BN and MoS2. In present work, we develop an approach to determine the edge stresses of individual non-equivalent zigzag edges. For prototypical system of BN zigzag nanoribbon, the edge stresses of N-terminated and B-terminated zigzag edge are determined. Using this approach, even the edge stresses for particular passivated edges observed in MoS2 nanoribbons are able to be obtained as well. The key results presented here are published in Ref. [1].","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114902863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472406
N. Song, X. Hao, J. Huang, Z. Liu, X. Liu, S. Huang, M. Green
Al:ZnO (AZO) thin films were deposited on quartz substrates by RF magnetron sputtering. The influences of thickness and substrate temperature on the structural, electrical, and optical properties of AZO films were investigated. Atomic force microscopy (AFM), transmission electron microscopy (TEM) and Hall Effect results revealed that a growth mode transition exists at the thickness of about 140 nm. As the thickness of AZO film increased from 143 nm to 551 nm, the optical band gap (Eg) rises from 3.4 eV to 3.55 eV, and the crystalline quality and electrical properties were improved, however, the free carrier absorption in the infrared (IR) region also increased. Among films with a thickness of 330 nm deposited at different substrate temperatures, ranging from room temperature (RT) to 450 °C, the film deposited at 250 °C displayed the best crystalline quality and electrical properties. The largest Eg of 3.5 eV was also acquired at this substrate temperature. The optical transmittance of all AZO films exceeds 85% in the wavelength range of 390 -1100 nm.
{"title":"Film thickness and substrate temperature effects on sputtered Al:ZnO window layer for Cu2ZnSnS4 thin film solar cells","authors":"N. Song, X. Hao, J. Huang, Z. Liu, X. Liu, S. Huang, M. Green","doi":"10.1109/COMMAD.2012.6472406","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472406","url":null,"abstract":"Al:ZnO (AZO) thin films were deposited on quartz substrates by RF magnetron sputtering. The influences of thickness and substrate temperature on the structural, electrical, and optical properties of AZO films were investigated. Atomic force microscopy (AFM), transmission electron microscopy (TEM) and Hall Effect results revealed that a growth mode transition exists at the thickness of about 140 nm. As the thickness of AZO film increased from 143 nm to 551 nm, the optical band gap (Eg) rises from 3.4 eV to 3.55 eV, and the crystalline quality and electrical properties were improved, however, the free carrier absorption in the infrared (IR) region also increased. Among films with a thickness of 330 nm deposited at different substrate temperatures, ranging from room temperature (RT) to 450 °C, the film deposited at 250 °C displayed the best crystalline quality and electrical properties. The largest Eg of 3.5 eV was also acquired at this substrate temperature. The optical transmittance of all AZO films exceeds 85% in the wavelength range of 390 -1100 nm.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126221048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472437
J. Campbell, A. Beling, M. Piels, Yang Fu, A. Cross, Qiugui Zhou, J. Peters, J. Bowers, Zhi Li
High-power, high-linearity photodiodes are essential components for photonic microwave applications since they have the potential to improve many aspects of the link performance such as link gain, noise figure, and spurious free dynamic range. This talk will describe photodiode structures that we have developed to achieve RF output power levels as high as 0.75 W at 15 GHz and high linearity, as measured by the output third-order intercept point (OIP3), > 55 dBm. Recent work has focused on extending operation to higher frequencies and heterogeneous integration with Si photonic circuits.
{"title":"High-power, high-linearity photodiodes for RF photonics","authors":"J. Campbell, A. Beling, M. Piels, Yang Fu, A. Cross, Qiugui Zhou, J. Peters, J. Bowers, Zhi Li","doi":"10.1109/COMMAD.2012.6472437","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472437","url":null,"abstract":"High-power, high-linearity photodiodes are essential components for photonic microwave applications since they have the potential to improve many aspects of the link performance such as link gain, noise figure, and spurious free dynamic range. This talk will describe photodiode structures that we have developed to achieve RF output power levels as high as 0.75 W at 15 GHz and high linearity, as measured by the output third-order intercept point (OIP3), > 55 dBm. Recent work has focused on extending operation to higher frequencies and heterogeneous integration with Si photonic circuits.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128049013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472349
S. Breuer, F. Karouta, H. Tan, C. Jagadish
We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.
{"title":"MOCVD growth of GaAs nanowires using Ga droplets","authors":"S. Breuer, F. Karouta, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472349","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472349","url":null,"abstract":"We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129781466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472380
D. Saxena, S. Mokkapati, H. Tan, C. Jagadish
Design parameters for a single GaAs nanowire laser are determined by calculating the threshold gain for nanowire guided modes as a function of nanowire diameter and length. The material gain as a function of carrier density is modelled using theoretical microscopic gain model. The laser power required to optically pump these nanowires to reach threshold gain is also determined. These calculations provide guidance to grow the optimal structures that can lase at low threshold at room temperature (RT).
{"title":"Designing single GaAs nanowire lasers","authors":"D. Saxena, S. Mokkapati, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472380","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472380","url":null,"abstract":"Design parameters for a single GaAs nanowire laser are determined by calculating the threshold gain for nanowire guided modes as a function of nanowire diameter and length. The material gain as a function of carrier density is modelled using theoretical microscopic gain model. The laser power required to optically pump these nanowires to reach threshold gain is also determined. These calculations provide guidance to grow the optimal structures that can lase at low threshold at room temperature (RT).","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134401073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472421
R. Sharda, R. Jeffery, M. Martyniuk, R. Woodward, J. Dell, L. Faraone
Oxygen plasma annealing was used to crystallise (BiDy)3(FeGa)5O12 (Bi:DyIG) at a temperature of 515°C, which is over 100°C lower compared with conventional thermal annealing. We used a thermal imager to measure and characterise the temperature of the sample with respect to RF power and pressure inside a plasma chamber.
{"title":"Plasma annealing as an effective method for the crystallization of bismuth iron garnet films","authors":"R. Sharda, R. Jeffery, M. Martyniuk, R. Woodward, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2012.6472421","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472421","url":null,"abstract":"Oxygen plasma annealing was used to crystallise (BiDy)<sub>3</sub>(FeGa)<sub>5</sub>O<sub>12</sub> (Bi:DyIG) at a temperature of 515°C, which is over 100°C lower compared with conventional thermal annealing. We used a thermal imager to measure and characterise the temperature of the sample with respect to RF power and pressure inside a plasma chamber.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130921569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472394
S. Turner, S. Mokkapati, G. Jolley, Lan Fu, H. Tan, Chennupati Jagadish
The enhancement in short-circuit current density (Jsc) provided by a TiO2 diffraction grating composed of rectangular strips at the rear of an In0.21Ga0.79As-GaAs quantum well solar cell (QWSC) is investigated using finite-difference time-domain (FDTD) simulations. Optimisation of the grating height, periodicity and fill-factor yielded an enhancement of 5.3% in Jsc over the reference cell.
{"title":"Dielectric diffraction gratings for light-trapping in InGaAs-GaAs quantum well solar cells","authors":"S. Turner, S. Mokkapati, G. Jolley, Lan Fu, H. Tan, Chennupati Jagadish","doi":"10.1109/COMMAD.2012.6472394","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472394","url":null,"abstract":"The enhancement in short-circuit current density (Jsc) provided by a TiO2 diffraction grating composed of rectangular strips at the rear of an In0.21Ga0.79As-GaAs quantum well solar cell (QWSC) is investigated using finite-difference time-domain (FDTD) simulations. Optimisation of the grating height, periodicity and fill-factor yielded an enhancement of 5.3% in Jsc over the reference cell.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133396409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472419
R. Buividas, N. Fahim, P. Stoddart, S. Juodkazis
Nano-textured surfaces of dielectric materials were prepared by laser ablation using femtosecond laser pulses. The ripples with periods 170-270 nm were prepared on several substrates: SiC, Al2O3, GaP, glass and synthetic diamond. Gold and silver coated surfaces were used to detect surface enhanced Raman scattering (SERS) of chemically and physically adsorbed molecules of thyophenol and rhodamine. Polarization sensitivity of ripple sensors was measured for irradiation by linearly polarized light. The limit of detection of SERS substrate was found one order of magnitude higher as compared with commercial Klarite and Solas substrates.
{"title":"Surface-enhanced Raman scattering sensor based on laser nano-textured surfaces","authors":"R. Buividas, N. Fahim, P. Stoddart, S. Juodkazis","doi":"10.1109/COMMAD.2012.6472419","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472419","url":null,"abstract":"Nano-textured surfaces of dielectric materials were prepared by laser ablation using femtosecond laser pulses. The ripples with periods 170-270 nm were prepared on several substrates: SiC, Al2O3, GaP, glass and synthetic diamond. Gold and silver coated surfaces were used to detect surface enhanced Raman scattering (SERS) of chemically and physically adsorbed molecules of thyophenol and rhodamine. Polarization sensitivity of ripple sensors was measured for irradiation by linearly polarized light. The limit of detection of SERS substrate was found one order of magnitude higher as compared with commercial Klarite and Solas substrates.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130854126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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