Anti-ambipolar transistors (AATs) have emerged as promising building blocks for next-generation multi-valued logic computing, which is crucial for overcoming the limitations of conventional binary logic and enabling more compact and functionally richer circuit architectures. However, their practical deployment has been hindered by low peak-to-valley current ratios (PVRs) and high operating voltages. Here, we report a high-performance AAT based on a heterostructure channel formed by hydrogen-terminated diamond (H-diamond) and molybdenum disulfide (MoS2). In the absence of a gate voltage, the minimal energy barriers between the source/drain electrodes and channel allow efficient injection of both electrons and holes. Simultaneously, the alignment of the conduction band of MoS2 with the valence band of H-diamond facilitates band-to-band tunneling of electrons into H-diamond, resulting in a high on-state current. Upon applying a gate voltage, the band alignment is disrupted, suppressing tunneling and increasing the injection barriers, which effectively reduces carrier transport and results in an ultra-low off-state current. As a result, the device achieves a high PVR of 108, far exceeding the typical PVR values (10–106) reported for previously demonstrated AATs, with the peak current occurring at a gate voltage near 0 V. To further illustrate its functionality, we implement a functional incrementer unit and a tunable inverter circuit. This study overcomes key challenges of AATs in PVR and peak voltage, while demonstrating their potential in multi-valued logic computing, offering a novel architecture for future low-power integrated circuits.
{"title":"High-performance anti-ambipolar transistors enabled by hydrogen-terminated diamond/molybdenum disulfide heterostructures","authors":"Yuping Gao, Shun Feng, Chi Liu, Jiaqi Lu, Tian Gao, Tongjian Liu, Mingyang Gao, Yue Kong, Mengjie Zhuang, Yuting Song, Bing Yang, Xin Yan, Yutaka Ohno, Dong-Ming Sun","doi":"10.1016/j.jmst.2026.03.022","DOIUrl":"https://doi.org/10.1016/j.jmst.2026.03.022","url":null,"abstract":"Anti-ambipolar transistors (AATs) have emerged as promising building blocks for next-generation multi-valued logic computing, which is crucial for overcoming the limitations of conventional binary logic and enabling more compact and functionally richer circuit architectures. However, their practical deployment has been hindered by low peak-to-valley current ratios (PVRs) and high operating voltages. Here, we report a high-performance AAT based on a heterostructure channel formed by hydrogen-terminated diamond (H-diamond) and molybdenum disulfide (MoS<sub>2</sub>). In the absence of a gate voltage, the minimal energy barriers between the source/drain electrodes and channel allow efficient injection of both electrons and holes. Simultaneously, the alignment of the conduction band of MoS<sub>2</sub> with the valence band of H-diamond facilitates band-to-band tunneling of electrons into H-diamond, resulting in a high on-state current. Upon applying a gate voltage, the band alignment is disrupted, suppressing tunneling and increasing the injection barriers, which effectively reduces carrier transport and results in an ultra-low off-state current. As a result, the device achieves a high PVR of 10<sup>8</sup>, far exceeding the typical PVR values (10–10<sup>6</sup>) reported for previously demonstrated AATs, with the peak current occurring at a gate voltage near 0 V. To further illustrate its functionality, we implement a functional incrementer unit and a tunable inverter circuit. This study overcomes key challenges of AATs in PVR and peak voltage, while demonstrating their potential in multi-valued logic computing, offering a novel architecture for future low-power integrated circuits.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"92 1","pages":""},"PeriodicalIF":10.9,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147495376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-18DOI: 10.1016/j.jmst.2026.02.043
Bo-Yao Li, Tian-Yu Jia, Zhang-Zhi Shi, Lu-Ning Wang
Ti alloy staples used in intestinal anastomosis pose risks of secondary surgery, creating demands for biodegradable alternatives. Here, we develop novel Zn-0.4Mn-0.2Cu-0.2Ag-0.05Mg (ZMCAM) alloy wires (0.28 mm) with a high strength of 301 MPa and superior elongation of 71%. At a 300 MPa strength level, our wire achieves the highest elongation among biodegradable metallic wires, attributed to grain boundary sliding that yields a high strain rate sensitivity (m = 0.14). After 14 days of immersion in phosphate buffer saline (PBS), the tensile strength and elongation of ZMCAM wires remain 240 MPa and 24%, meeting the clinical requirements. Staples made of ZMCAM wires are evaluated in PBS and in the rat intestine. Degradation of the staples in vivo (0.35 mm/year) is 1.7 times faster than in vitro (0.21 mm/year). This accelerated in vivo corrosion results from the combined effects of a Zn2+ gradient driven by protein adsorption, inflammation-induced acidification, and the dynamic stresses of blood flow and intestinal peristalsis. Meanwhile, ZMCAM staples promote greater collagen deposition and angiogenesis than Ti alloy and pure Zn. They also markedly lower the M1/M2 macrophage ratio and up-regulate anti-inflammatory genes. The novel Zn alloy staples are promising for biodegradable gastrointestinal anastomosis.
{"title":"High strength-ductile quinary Zn-Mn-based alloy wires for healing-promoting biodegradable staples","authors":"Bo-Yao Li, Tian-Yu Jia, Zhang-Zhi Shi, Lu-Ning Wang","doi":"10.1016/j.jmst.2026.02.043","DOIUrl":"https://doi.org/10.1016/j.jmst.2026.02.043","url":null,"abstract":"Ti alloy staples used in intestinal anastomosis pose risks of secondary surgery, creating demands for biodegradable alternatives. Here, we develop novel Zn-0.4Mn-0.2Cu-0.2Ag-0.05Mg (ZMCAM) alloy wires (0.28 mm) with a high strength of 301 MPa and superior elongation of 71%. At a 300 MPa strength level, our wire achieves the highest elongation among biodegradable metallic wires, attributed to grain boundary sliding that yields a high strain rate sensitivity (<em>m</em> = 0.14). After 14 days of immersion in phosphate buffer saline (PBS), the tensile strength and elongation of ZMCAM wires remain 240 MPa and 24%, meeting the clinical requirements. Staples made of ZMCAM wires are evaluated in PBS and in the rat intestine. Degradation of the staples <em>in vivo</em> (0.35 mm/year) is 1.7 times faster than <em>in vitro</em> (0.21 mm/year). This accelerated <em>in vivo</em> corrosion results from the combined effects of a Zn<sup>2+</sup> gradient driven by protein adsorption, inflammation-induced acidification, and the dynamic stresses of blood flow and intestinal peristalsis. Meanwhile, ZMCAM staples promote greater collagen deposition and angiogenesis than Ti alloy and pure Zn. They also markedly lower the M1/M2 macrophage ratio and up-regulate anti-inflammatory genes. The novel Zn alloy staples are promising for biodegradable gastrointestinal anastomosis.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"13 1","pages":""},"PeriodicalIF":10.9,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147489788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The realization of round-the-clock antibacterial represents a pivotal challenge in air purification, whose core lies in the synergistic integration of daytime bactericidal action and nighttime biofilm inhibition. Previous studies have confirmed that atmospheric water serves as the critical sterilization reactant. In this work, we engineered a chiral photocatalyst by coordinating D-methionine to unsaturated Cr3+ sites and depositing Ag NPs on hygroscopic MIL-101(Cr). The chiral structure constructed by unsaturated Cr3+ in post-coordinated MIL-101(Cr) regulated the downward shift of the d-band center, which led to chirality-induced electronic structure optimization and promoted the desorption of ·OH and O*. While the Ohmic contact of MIL-101(Cr)-Ag, constructed by work function screening and energy band engineering, minimized charge-transfer barriers and expanded active sites. Theoretical and experimental analyses confirm that the “MIL-101(Cr) water capture -Ag NPs water intake” strategy dramatically enhanced water activation. In-situ Raman/DRIFTS spectroscopy tracked bacterial elimination and reactive intermediates, with DFT calculations identifying TS2 as the pivotal transition state. The mask coating prepared by MAD has round-the-clock antibacterial effect through photocatalytic Reactive Oxygen Species generation (99.99% bactericidal efficiency) and D-methionine-mediated peptidoglycan destruction (95.22% biofilm inhibition). This work can provide some important enlightenment for the design of efficient photocatalysts and environmental purification.
{"title":"Engineering chiral MOFs for round-the-clock antibacterial activity via d-band center-mediated water activation","authors":"Liting Dong, Xiao Sun, Jianhua Liu, Tianyuan Hou, Yanan Li, Xicheng Wang, Shougang Chen","doi":"10.1016/j.jmst.2026.02.042","DOIUrl":"https://doi.org/10.1016/j.jmst.2026.02.042","url":null,"abstract":"The realization of round-the-clock antibacterial represents a pivotal challenge in air purification, whose core lies in the synergistic integration of daytime bactericidal action and nighttime biofilm inhibition. Previous studies have confirmed that atmospheric water serves as the critical sterilization reactant. In this work, we engineered a chiral photocatalyst by coordinating D-methionine to unsaturated Cr<sup>3+</sup> sites and depositing Ag NPs on hygroscopic MIL-101(Cr). The chiral structure constructed by unsaturated Cr<sup>3+</sup> in post-coordinated MIL-101(Cr) regulated the downward shift of the d-band center, which led to chirality-induced electronic structure optimization and promoted the desorption of ·OH and O*. While the Ohmic contact of MIL-101(Cr)-Ag, constructed by work function screening and energy band engineering, minimized charge-transfer barriers and expanded active sites. Theoretical and experimental analyses confirm that the “MIL-101(Cr) water capture -Ag NPs water intake” strategy dramatically enhanced water activation. In-situ Raman/DRIFTS spectroscopy tracked bacterial elimination and reactive intermediates, with DFT calculations identifying TS2 as the pivotal transition state. The mask coating prepared by MAD has round-the-clock antibacterial effect through photocatalytic Reactive Oxygen Species generation (99.99% bactericidal efficiency) and D-methionine-mediated peptidoglycan destruction (95.22% biofilm inhibition). This work can provide some important enlightenment for the design of efficient photocatalysts and environmental purification.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"309 1","pages":""},"PeriodicalIF":10.9,"publicationDate":"2026-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147466086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L12-strengthened high-entropy alloys (HEAs) exhibit exceptional mechanical properties over a wide temperature range; however, their limited oxidation resistance remains a critical barrier to high-temperature applications. In this study, we demonstrate that the addition of trace amounts of Ta (1 at.%) to a CoCrNiAlTi-based HEA significantly improves its oxidation resistance. The Ta-containing HEA exhibits a tenfold reduction in oxidation rate at 1000 °C compared to its Ta-free counterpart. Microstructural analysis reveals that this enhancement originates from Ta-induced modifications to the oxide scale architecture, notably the formation of a novel TaTiO4 layer and a densified TiO2-modified Cr2O3 layer, which synergistically suppresses both oxygen and cation diffusion. In addition to oxidation resistance, the Ta addition also improves mechanical performance, as evidenced by a 17% increase in yield strength while retaining excellent ductility. These findings indicate that strategic microalloying with Ta enables a well-balanced enhancement of both oxidation resistance and mechanical properties. This work highlights a rational alloy design strategy that concurrently engineers oxide scale architecture and mechanical behavior, paving the way for advanced HEA performance in extreme environments.
{"title":"Simultaneous enhancement of oxidation resistance and mechanical properties in L12-strengthened high entropy alloys via microalloying","authors":"Junjie Yang, Han Chen, Haoyu Zhai, Yuchi Cui, Qiuyu Gao, Yihao Wang, Hao Lin, Gaoqiu Sun, Zhe Chen, Shengyi Zhong","doi":"10.1016/j.jmst.2026.03.019","DOIUrl":"https://doi.org/10.1016/j.jmst.2026.03.019","url":null,"abstract":"L1<sub>2</sub>-strengthened high-entropy alloys (HEAs) exhibit exceptional mechanical properties over a wide temperature range; however, their limited oxidation resistance remains a critical barrier to high-temperature applications. In this study, we demonstrate that the addition of trace amounts of Ta (1 at.%) to a CoCrNiAlTi-based HEA significantly improves its oxidation resistance. The Ta-containing HEA exhibits a tenfold reduction in oxidation rate at 1000 °C compared to its Ta-free counterpart. Microstructural analysis reveals that this enhancement originates from Ta-induced modifications to the oxide scale architecture, notably the formation of a novel TaTiO<sub>4</sub> layer and a densified TiO<sub>2</sub>-modified Cr<sub>2</sub>O<sub>3</sub> layer, which synergistically suppresses both oxygen and cation diffusion. In addition to oxidation resistance, the Ta addition also improves mechanical performance, as evidenced by a 17% increase in yield strength while retaining excellent ductility. These findings indicate that strategic microalloying with Ta enables a well-balanced enhancement of both oxidation resistance and mechanical properties. This work highlights a rational alloy design strategy that concurrently engineers oxide scale architecture and mechanical behavior, paving the way for advanced HEA performance in extreme environments.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"15 1","pages":""},"PeriodicalIF":10.9,"publicationDate":"2026-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147493098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-17DOI: 10.1016/j.jmst.2026.03.013
Yinglong Weng, Xinyu Liu, Kun Zhang, Jianping Zhang, Nannan Li, Haifeng Zhang, Xiaotong Han
Excessive d–p orbital hybridization in nickel-based phosphides fundamentally constrains their electrocatalytic activity for water splitting. Using Ni5P2 as a model system, we present a Mo-triggered electron flow reversal (EFR) strategy to precisely regulate electronic redistribution and orbital hybridization. Density functional theory (DFT) calculations combined with in-situ characterizations demonstrate that the formation of Mo–P–Ni bridging bonds reverses the intrinsic electron transfer pathway, converting the native Ni → P ← Ni configuration in pristine Ni5P2 into a Mo → P → Ni electron flow. This electronic reconfiguration optimizes d–p orbital hybridization, simultaneously balancing hydrogen adsorption–desorption kinetics for hydrogen evolution reaction (HER) and promoting rapid surface reconstruction into catalytically active nickel (oxy)hydroxide species for oxygen evolution reaction (OER). Consequently, Mo-doped Ni5P2 delivers outstanding bifunctional performance under industrially relevant conditions (30 wt% KOH, 60°C), achieving 10 mA cm–2 at a low cell voltage of 1.457 V. This work establishes electron flow reversal as an effective strategy to manipulate orbital hybridization, offering a rational design principle for advanced electrocatalysts.
镍基磷化物中过多的d-p轨道杂化从根本上限制了它们对水裂解的电催化活性。以Ni5P2为模型系统，我们提出了mo触发的电子流反转（EFR）策略来精确调节电子重分布和轨道杂化。密度泛函理论（DFT）计算结合原位表征表明，Mo - P - Ni桥接键的形成逆转了固有电子转移途径，将原始Ni5P2中原生Ni → P←Ni构型转变为Mo → P → Ni电子流。这种电子重构优化了d-p轨道杂化，同时平衡了析氢反应（HER）的氢吸附-解吸动力学，并促进了析氢反应（OER）中催化活性镍（氧）氢氧化物的快速表面重构。因此，在工业相关条件下（30 wt% KOH, 60°C）， mo掺杂Ni5P2具有出色的双功能性能，在1.457 V的低电池电压下达到10 mA cm-2。本工作建立了电子流反转作为控制轨道杂化的有效策略，为先进电催化剂的合理设计提供了理论依据。
{"title":"Mo triggered electron flow reversal and d–p orbital hybridization modulation on Ni5P2 unlocking efficient water splitting","authors":"Yinglong Weng, Xinyu Liu, Kun Zhang, Jianping Zhang, Nannan Li, Haifeng Zhang, Xiaotong Han","doi":"10.1016/j.jmst.2026.03.013","DOIUrl":"https://doi.org/10.1016/j.jmst.2026.03.013","url":null,"abstract":"Excessive d–p orbital hybridization in nickel-based phosphides fundamentally constrains their electrocatalytic activity for water splitting. Using Ni<sub>5</sub>P<sub>2</sub> as a model system, we present a Mo-triggered electron flow reversal (EFR) strategy to precisely regulate electronic redistribution and orbital hybridization. Density functional theory (DFT) calculations combined with <em>in-situ</em> characterizations demonstrate that the formation of Mo–P–Ni bridging bonds reverses the intrinsic electron transfer pathway, converting the native Ni → P ← Ni configuration in pristine Ni<sub>5</sub>P<sub>2</sub> into a Mo → P → Ni electron flow. This electronic reconfiguration optimizes d–p orbital hybridization, simultaneously balancing hydrogen adsorption–desorption kinetics for hydrogen evolution reaction (HER) and promoting rapid surface reconstruction into catalytically active nickel (oxy)hydroxide species for oxygen evolution reaction (OER). Consequently, Mo-doped Ni<sub>5</sub>P<sub>2</sub> delivers outstanding bifunctional performance under industrially relevant conditions (30 wt% KOH, 60°C), achieving 10 mA cm<sup>–2</sup> at a low cell voltage of 1.457 V. This work establishes electron flow reversal as an effective strategy to manipulate orbital hybridization, offering a rational design principle for advanced electrocatalysts.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"45 1","pages":""},"PeriodicalIF":10.9,"publicationDate":"2026-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147493099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-12DOI: 10.1016/j.jmst.2026.03.016
Hyun Woo Jeong, Yong Hyeon Cho, Jaewook Lee, Heejin Hong, Dong Hee Han, Geun Hyeong Park, Hyojun Choi, Hyeong Seok Choi, Jaejoon Kim, Young Yong Kim, Yunseok Kim, Min Hyuk Park
Decreasing the operating voltage of (Hf,Zr)O2-based ferroelectric memories without sacrificing endurance is a longstanding challenge arising from the large coercive field (Ec). Here we demonstrate a defect-engineered, imprinted antiferroelectric in Zr-rich Hf0.3Zr0.7O2 ultrathin films that enables non-volatile, symmetric half-loop operation with 1.25 V low-voltage switching, and endurance to 1010 cycles. The imprint is established by interfacial oxygen-vacancy accumulation at the top Hf0.3Zr0.7O2 interface, introduced via top-electrode engineering. Chemical analyses confirm a higher fraction of oxygen-deficiency localized at the top interface, while structural analysis reveals well-crystallized tetragonal phases with negligible monoclinic content. The built-in bias shifts the antiferroelectric double loop by −0.62 V, corresponding to Built-in field (Ebi) ∼ 0.78 MV cm−1 and an interfacial fixed-charge density of 8.6 × 1012 cm−2 with double remanent polarization (2Pr) of 9.9–14.5 µC cm2 with < 10% variation even after 1010 cycles. The effective Ec is reduced to 0.42–0.47 MV cm−1 during 1010 switching cycling. Strain analysis indicates reduced in-plane tensile strain and a higher orthorhombic phase fraction in imprinted devices, explaining the strong suppression of wake-up. Switching-kinetics measurements fitted to the nucleation-limited switching model show faster and narrower switching-time distributions. These results establish charged-defect/strain co-engineering as a scalable route to low-voltage, high-reliability Hf1−xZrxO2 memories that relax the traditional speed-endurance trade-off.
{"title":"Defect-engineering driven imprint enables low-power and high-endurance of antiferroelectric Hf0.3Zr0.7O2 ultra-thin films for nonvolatile memories","authors":"Hyun Woo Jeong, Yong Hyeon Cho, Jaewook Lee, Heejin Hong, Dong Hee Han, Geun Hyeong Park, Hyojun Choi, Hyeong Seok Choi, Jaejoon Kim, Young Yong Kim, Yunseok Kim, Min Hyuk Park","doi":"10.1016/j.jmst.2026.03.016","DOIUrl":"https://doi.org/10.1016/j.jmst.2026.03.016","url":null,"abstract":"Decreasing the operating voltage of (Hf,Zr)O<sub>2</sub>-based ferroelectric memories without sacrificing endurance is a longstanding challenge arising from the large coercive field (<em>E</em><sub>c</sub>). Here we demonstrate a defect-engineered, imprinted antiferroelectric in Zr-rich Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub> ultrathin films that enables non-volatile, symmetric half-loop operation with 1.25 V low-voltage switching, and endurance to 10<sup>10</sup> cycles. The imprint is established by interfacial oxygen-vacancy accumulation at the top Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub> interface, introduced via top-electrode engineering. Chemical analyses confirm a higher fraction of oxygen-deficiency localized at the top interface, while structural analysis reveals well-crystallized tetragonal phases with negligible monoclinic content. The built-in bias shifts the antiferroelectric double loop by −0.62 V, corresponding to Built-in field (<em>E</em><sub>bi</sub>) ∼ 0.78 MV cm<sup>−1</sup> and an interfacial fixed-charge density of 8.6 × 10<sup>12</sup> cm<sup>−2</sup> with double remanent polarization (2<em>P</em><sub>r</sub>) of 9.9–14.5 µC cm<sup>2</sup> with < 10% variation even after 10<sup>10</sup> cycles. The effective <em>E</em><sub>c</sub> is reduced to 0.42–0.47 MV cm<sup>−1</sup> during 10<sup>10</sup> switching cycling. Strain analysis indicates reduced in-plane tensile strain and a higher orthorhombic phase fraction in imprinted devices, explaining the strong suppression of wake-up. Switching-kinetics measurements fitted to the nucleation-limited switching model show faster and narrower switching-time distributions. These results establish charged-defect/strain co-engineering as a scalable route to low-voltage, high-reliability Hf<sub>1−</sub><em><sub>x</sub></em>Zr<em><sub>x</sub></em>O<sub>2</sub> memories that relax the traditional speed-endurance trade-off.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"54 1","pages":""},"PeriodicalIF":10.9,"publicationDate":"2026-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147393600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-12DOI: 10.1016/j.jmst.2026.03.018
Zhilin Wen, Jing Zhou, Lin Yang, Licheng Liu, Yuqiang Yan, Zhengwu Peng, Liejun Li, Haibo Ke, Weihua Wang
Achieving a balanced combination of low coercivity, excellent mechanical property, and high thermal stability is essential for advancing next-generation soft magnetic materials, yet their simultaneous realization remains a fundamental challenge due to intrinsically conflicting microstructural requirements. While precipitation strengthening enhances mechanical performance and thermal stability, it typically impedes domain-wall motion and thus increases coercivity. Here, we address these competing demands through magnetic precipitation engineering in a FeCoNi-based high-entropy alloy (HEA) co-alloyed with Ta and B. The designed alloy develops a dual-scale Ta-rich precipitate structure, featuring coherent nanoscale (∼20 nm) and coarse incoherent spherical (∼143 nm) particles embedded within a ferromagnetic matrix. B addition plays a pivotal role in tailoring the precipitate composition and morphology by suppressing Ta enrichment and promoting Co segregation, which induces a paramagnetic-to-ferromagnetic transition in the coarse phase. These exchange-coupled precipitates synergistically interact with the matrix to reduce coercivity from 2164 to 564 A/m while preserving a high saturation magnetization of 130 emu/g. Concurrently, the hierarchical precipitate architecture confers a yield strength of 1680 MPa with 39% compressive plasticity via dislocation blocking and strain delocalization, and exhibits exceptional thermal stability after annealing at 600 °C for 100 h. This work demonstrates a precipitation-mediated strategy to decouple traditionally competing properties in magnetic HEAs, offering a general design framework for advanced structural-functional soft magnetic materials.
{"title":"Achieving mechanical-magnetic-thermal stability synergy in ferromagnetic high-entropy alloys via magnetic precipitation engineering","authors":"Zhilin Wen, Jing Zhou, Lin Yang, Licheng Liu, Yuqiang Yan, Zhengwu Peng, Liejun Li, Haibo Ke, Weihua Wang","doi":"10.1016/j.jmst.2026.03.018","DOIUrl":"https://doi.org/10.1016/j.jmst.2026.03.018","url":null,"abstract":"Achieving a balanced combination of low coercivity, excellent mechanical property, and high thermal stability is essential for advancing next-generation soft magnetic materials, yet their simultaneous realization remains a fundamental challenge due to intrinsically conflicting microstructural requirements. While precipitation strengthening enhances mechanical performance and thermal stability, it typically impedes domain-wall motion and thus increases coercivity. Here, we address these competing demands through magnetic precipitation engineering in a FeCoNi-based high-entropy alloy (HEA) co-alloyed with Ta and B. The designed alloy develops a dual-scale Ta-rich precipitate structure, featuring coherent nanoscale (∼20 nm) and coarse incoherent spherical (∼143 nm) particles embedded within a ferromagnetic matrix. B addition plays a pivotal role in tailoring the precipitate composition and morphology by suppressing Ta enrichment and promoting Co segregation, which induces a paramagnetic-to-ferromagnetic transition in the coarse phase. These exchange-coupled precipitates synergistically interact with the matrix to reduce coercivity from 2164 to 564 A/m while preserving a high saturation magnetization of 130 emu/g. Concurrently, the hierarchical precipitate architecture confers a yield strength of 1680 MPa with 39% compressive plasticity via dislocation blocking and strain delocalization, and exhibits exceptional thermal stability after annealing at 600 °C for 100 h. This work demonstrates a precipitation-mediated strategy to decouple traditionally competing properties in magnetic HEAs, offering a general design framework for advanced structural-functional soft magnetic materials.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"52 1","pages":""},"PeriodicalIF":10.9,"publicationDate":"2026-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147465950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Domain boundaries (DBs) are prevalent in multiferroic films and play a crucial role in modulating their magnetoelectric properties. In this study, we used a combination of pulsed laser deposition, transmission electron microscope, and first-principles calculations to quantitatively elucidate the structures of the two DBs in hexagonal LuFeO3 films and the regulation of interfacial magnetic coupling by the ferroelectric polarization direction on both sides of the DB. At Type-I boundaries, the atomic reconstruction of Fe allows the magnetic order to be directly controlled by the ferroelectric polarization direction. The interfacial magnetic coupling is switched from antiferromagnetic (AFM) to ferromagnetic (FM) by reversing the ferroelectric polarization alignment. Antiparallel polarization stabilizes the AFM state, while parallel polarization stabilizes the FM state. In contrast, Type-II DBs are characterized by Lu/Fe column-sharing and exhibit polarization-insensitive antiferromagnetism, thereby achieving effective decoupling of magnetic and electric order. Our findings establish that the specific atomic reconstruction at DBs serves as a powerful design parameter for tailoring interfacial magnetoelectric functionality, with Type-I and Type-II boundaries offering distinct routes for developing electrically switchable and stable magnetic interfaces, respectively.
{"title":"Magnetoelectric coupling at domain boundaries in h-LuFeO3 multiferroics","authors":"Zhen Qian, Ziyi Sun, Yixiao Jiang, Tingting Yao, Zhiqing Yang, Hengqiang Ye, Chunlin Chen","doi":"10.1016/j.jmst.2026.03.011","DOIUrl":"https://doi.org/10.1016/j.jmst.2026.03.011","url":null,"abstract":"Domain boundaries (DBs) are prevalent in multiferroic films and play a crucial role in modulating their magnetoelectric properties. In this study, we used a combination of pulsed laser deposition, transmission electron microscope, and first-principles calculations to quantitatively elucidate the structures of the two DBs in hexagonal LuFeO<sub>3</sub> films and the regulation of interfacial magnetic coupling by the ferroelectric polarization direction on both sides of the DB. At Type-I boundaries, the atomic reconstruction of Fe allows the magnetic order to be directly controlled by the ferroelectric polarization direction. The interfacial magnetic coupling is switched from antiferromagnetic (AFM) to ferromagnetic (FM) by reversing the ferroelectric polarization alignment. Antiparallel polarization stabilizes the AFM state, while parallel polarization stabilizes the FM state. In contrast, Type-II DBs are characterized by Lu/Fe column-sharing and exhibit polarization-insensitive antiferromagnetism, thereby achieving effective decoupling of magnetic and electric order. Our findings establish that the specific atomic reconstruction at DBs serves as a powerful design parameter for tailoring interfacial magnetoelectric functionality, with Type-I and Type-II boundaries offering distinct routes for developing electrically switchable and stable magnetic interfaces, respectively.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"1 1","pages":""},"PeriodicalIF":10.9,"publicationDate":"2026-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147439898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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