Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328174
B. Srocka, H. Scheffler, D. Bimberg
We investigated the doping of In/sub 0.53/Ga/sub 0.47/As with rhodium and iridium by Liquid Phase Epitaxy and observed for the first time Rh- and Ir-related levels in InGaAs by means of Deep Level Transient Spectroscopy. Both dopants were found to produce near-midgap levels. The available data support an association of these levels with the TM/sup 2+/3+/-single acceptor transitions caused by substitutionally incorporated TM-ions on cation sites. The distribution coefficients determined from the trap concentrations in the layers are rather small, of the order of 1/spl times/10/sup -6/.<>
{"title":"Observation of rhodium- and iridium-related deep levels in In/sub 0.53/Ga/sub 0.47/As","authors":"B. Srocka, H. Scheffler, D. Bimberg","doi":"10.1109/ICIPRM.1994.328174","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328174","url":null,"abstract":"We investigated the doping of In/sub 0.53/Ga/sub 0.47/As with rhodium and iridium by Liquid Phase Epitaxy and observed for the first time Rh- and Ir-related levels in InGaAs by means of Deep Level Transient Spectroscopy. Both dopants were found to produce near-midgap levels. The available data support an association of these levels with the TM/sup 2+/3+/-single acceptor transitions caused by substitutionally incorporated TM-ions on cation sites. The distribution coefficients determined from the trap concentrations in the layers are rather small, of the order of 1/spl times/10/sup -6/.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123944183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328208
S. Kawarabayashi, M. Yokogawa, A. Kawasaki, R. Nakai
Comparisons are made between conventional liquid encapsulated Czochralski (LEC), vapor pressure-controlled Czochralski (VCZ) and vertical gradient freeze (VGF) for the growth of InP crystals focusing on size and dislocation density. VCZ seems to be the most promising method for low dislocation density InP crystal growth with a diameter of larger than three inches.<>
{"title":"Comparisons between conventional LEC, VCZ and VGF for the growth of InP crystals","authors":"S. Kawarabayashi, M. Yokogawa, A. Kawasaki, R. Nakai","doi":"10.1109/ICIPRM.1994.328208","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328208","url":null,"abstract":"Comparisons are made between conventional liquid encapsulated Czochralski (LEC), vapor pressure-controlled Czochralski (VCZ) and vertical gradient freeze (VGF) for the growth of InP crystals focusing on size and dislocation density. VCZ seems to be the most promising method for low dislocation density InP crystal growth with a diameter of larger than three inches.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"528 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113987739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328236
S. Strahle, D. Geiger, B. Henle, E. Kohn
InP-based HEMTs exhibit superior high frequency performance compared to GaAs PS-HEMTs. This is commonly attributed to a higher electron mobility, saturated velocity and better carrier confinement in the GaInAs QW-channel. Whereas the parameters determining f/sub t/ are well documented, the influence of the carrier confinement and electron dynamics on f/sub max/ is less clear. Intrinsically, a high f/sub max/ relies essentially on the efficiency of the gate-drain high field drift region to separate input and output. Thus, the impact of this region on f/sub max/ has been extensively studied analytically and numerically in the past. Due to the complex electron dynamics involved and the 2D-nature of this region, most models are limited to specific structures and only few general design criteria exist. In this study three structures are compared: an AlInAs/GaInAs HEMT structure on InP is analysed in detail and compared with a GaAs PM-HEMT device and a novel InP-based HEMT structure containing a composite GaInAs-InP QW channel. As mentioned above, the high f/sub max/ of InP-based HEMTs is generally attributed to an improved hot electron confinement. The analysis presented here, however, reveals that the high f/sub max/ of the InP-based devices is mainly linked to an extended lateral drift region and not to an improved carrier confinement.<>
{"title":"Drift region characteristics of InP-based HEMT devices evaluated by a simple drift region model","authors":"S. Strahle, D. Geiger, B. Henle, E. Kohn","doi":"10.1109/ICIPRM.1994.328236","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328236","url":null,"abstract":"InP-based HEMTs exhibit superior high frequency performance compared to GaAs PS-HEMTs. This is commonly attributed to a higher electron mobility, saturated velocity and better carrier confinement in the GaInAs QW-channel. Whereas the parameters determining f/sub t/ are well documented, the influence of the carrier confinement and electron dynamics on f/sub max/ is less clear. Intrinsically, a high f/sub max/ relies essentially on the efficiency of the gate-drain high field drift region to separate input and output. Thus, the impact of this region on f/sub max/ has been extensively studied analytically and numerically in the past. Due to the complex electron dynamics involved and the 2D-nature of this region, most models are limited to specific structures and only few general design criteria exist. In this study three structures are compared: an AlInAs/GaInAs HEMT structure on InP is analysed in detail and compared with a GaAs PM-HEMT device and a novel InP-based HEMT structure containing a composite GaInAs-InP QW channel. As mentioned above, the high f/sub max/ of InP-based HEMTs is generally attributed to an improved hot electron confinement. The analysis presented here, however, reveals that the high f/sub max/ of the InP-based devices is mainly linked to an extended lateral drift region and not to an improved carrier confinement.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126327962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328177
C. Herzinger, P. G. Snyder, F. Celii, Y. Kao, B. Johs, J. Woollam
Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports.<>
{"title":"Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP","authors":"C. Herzinger, P. G. Snyder, F. Celii, Y. Kao, B. Johs, J. Woollam","doi":"10.1109/ICIPRM.1994.328177","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328177","url":null,"abstract":"Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126550944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328183
J. Baillargeon, A. Cho, R. Fischer, P. Pearah, K. Cheng
Most epitaxial growth techniques for InP require PH/sub 3/. Such processes are becoming increasing difficult perform because PH/sub 3/ is highly toxic. Solid phosphorus source MBE offers a less hazardous alternative. This paper describes the properties of Si and Be doped InP grown with red phosphorus using a valved cracking cell.<>
{"title":"Growth of silicon and beryllium doped InP by MBE using solid phosphorus","authors":"J. Baillargeon, A. Cho, R. Fischer, P. Pearah, K. Cheng","doi":"10.1109/ICIPRM.1994.328183","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328183","url":null,"abstract":"Most epitaxial growth techniques for InP require PH/sub 3/. Such processes are becoming increasing difficult perform because PH/sub 3/ is highly toxic. Solid phosphorus source MBE offers a less hazardous alternative. This paper describes the properties of Si and Be doped InP grown with red phosphorus using a valved cracking cell.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126570304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328235
A. Mesquida Kusters, A. Kohl, S. Brittner, V. Sommer, K. Heime
During the past several years, HEMT structures on InP have attracted much attention in high-speed digital and millimeter wave device applications. Devices which use In/sub x/Ga/sub 1-x/As channel on InP substrates (x/spl ges/0.53) show better performance than those on GaAs (0/spl les/x0.3) because of the enhanced low-field mobility, peak- and saturation velocities as well as carrier concentration in the case of indium-rich channels. Therefore, the most effective way to improve both DC- and RF-characteristics of these devices is to increase x as high as possible without device degradation by channel relaxation. A very promising alternative to conventional InAlAs/InGaAs/InP HEMTs are the InP/In/sub x/Ga/sub 1-x/As/InP pseudomorphic HFETs. In these devices the instable Al-containing material InAlAs is replaced by InP for both barrier and carrier supplying layers. In order to improve the Schottky characteristics on InP a thin, highly doped and depleted p-InP barrier enhancement layer is utilized. In the recent past very good results have been achieved using this approach. In this study we present a systematical investigation about the influence of excess indium in the channel of five LP-MOVPE grown single quantum-well (SQW) InP/In/sub x/Ga/sub 1-x/As/InP (x=0.53, 0.6, 0.67, 0.74 and 0.81) HEMTs.<>
{"title":"Effect of indium mole fraction on charge control, DC and RF performance of single quantum-well InP/In/sub x/Ga/sub 1-x/As/InP (0.53/spl les/x/spl les/0.81) HEMTs","authors":"A. Mesquida Kusters, A. Kohl, S. Brittner, V. Sommer, K. Heime","doi":"10.1109/ICIPRM.1994.328235","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328235","url":null,"abstract":"During the past several years, HEMT structures on InP have attracted much attention in high-speed digital and millimeter wave device applications. Devices which use In/sub x/Ga/sub 1-x/As channel on InP substrates (x/spl ges/0.53) show better performance than those on GaAs (0/spl les/x0.3) because of the enhanced low-field mobility, peak- and saturation velocities as well as carrier concentration in the case of indium-rich channels. Therefore, the most effective way to improve both DC- and RF-characteristics of these devices is to increase x as high as possible without device degradation by channel relaxation. A very promising alternative to conventional InAlAs/InGaAs/InP HEMTs are the InP/In/sub x/Ga/sub 1-x/As/InP pseudomorphic HFETs. In these devices the instable Al-containing material InAlAs is replaced by InP for both barrier and carrier supplying layers. In order to improve the Schottky characteristics on InP a thin, highly doped and depleted p-InP barrier enhancement layer is utilized. In the recent past very good results have been achieved using this approach. In this study we present a systematical investigation about the influence of excess indium in the channel of five LP-MOVPE grown single quantum-well (SQW) InP/In/sub x/Ga/sub 1-x/As/InP (x=0.53, 0.6, 0.67, 0.74 and 0.81) HEMTs.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133986723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328158
J. Jonsson, F. Reinhardt, K. Ploska, M. Zorn, W. Richter, J. Zettler
In this work we applied the optical reflectance anisotropy spectroscopy (RAS or RDS) technique to probe the change of surface structure which occurs during a MOVPE gas switching sequence. The exchange of group-V atoms was monitored in situ by RAS when GaAs, InGaAs and were exposed to PH/sub 3/ and InP to AsH/sub 3/. The resulting structure is compared with RAS spectra from reconstructed InP, InAs, GaAs and GaP surfaces. It is concluded that the c(4/spl times/4) reconstructed, As-terminated GaAs, as well as the As-terminated InGaAs surface, is replaced by a P-terminated (2/spl times/3)-like structure. For InP the (2/spl times/4)-like RAS spectra is replaced by a structure similar to that of (1/spl times/3) reconstructed InAs. At standard MOVPE growth temperatures and pressures the time constant for As by P exchange is of the order of 100 ms. The temperature and pressure dependence of this reaction is reported, and the activation energy was determined to be 1.64 eV on GaAs. It is concluded that PH/sub 3/ enhances the desorption of As from GaAs. The influence of the exchange process on interface properties of heterostructures is discussed.<>
{"title":"Real time monitoring of PH/sub 3/ and AsH/sub 3/ induced exchange reactions on GaAs, InGaAs and InP during MOVPE","authors":"J. Jonsson, F. Reinhardt, K. Ploska, M. Zorn, W. Richter, J. Zettler","doi":"10.1109/ICIPRM.1994.328158","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328158","url":null,"abstract":"In this work we applied the optical reflectance anisotropy spectroscopy (RAS or RDS) technique to probe the change of surface structure which occurs during a MOVPE gas switching sequence. The exchange of group-V atoms was monitored in situ by RAS when GaAs, InGaAs and were exposed to PH/sub 3/ and InP to AsH/sub 3/. The resulting structure is compared with RAS spectra from reconstructed InP, InAs, GaAs and GaP surfaces. It is concluded that the c(4/spl times/4) reconstructed, As-terminated GaAs, as well as the As-terminated InGaAs surface, is replaced by a P-terminated (2/spl times/3)-like structure. For InP the (2/spl times/4)-like RAS spectra is replaced by a structure similar to that of (1/spl times/3) reconstructed InAs. At standard MOVPE growth temperatures and pressures the time constant for As by P exchange is of the order of 100 ms. The temperature and pressure dependence of this reaction is reported, and the activation energy was determined to be 1.64 eV on GaAs. It is concluded that PH/sub 3/ enhances the desorption of As from GaAs. The influence of the exchange process on interface properties of heterostructures is discussed.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"355 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132656369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328162
E. Zielinski, D. Baums, H. Haisch, M. Klenk, E. Kuhn, K. Satzke, M. Schilling
This paper summarises work currently performed within the European program RACE, under contract R2006 WELCOME, Quantum Well Components for High Speed Transmission Systems. The introduction of Integrated Broadband Communication (IBC) services requires solutions that enable high capacity transmission and distribution of information at low cost, including the integration and possible upgrade of existing networks. A currently discussed approach is based on direct detection schemes at very high bit rates on one optical carrier. Optical communication systems based on standard fibres presently achieve data rates of 10 Gbit/s. The most stringent limitation appears to be the dispersion of standard fibres which limits the bridgeable fibre length. Residual chirp which always accompanies intensity modulation has not only to be minimised. For adjustable low negative chirp, however, the maximum fibre length can be even increased above the dispersion limit of chirp-free fibre transmission. In the WELCOME project several approaches for transmission with direct detection and low chirp intensity modulation at bit rates of 10 Gbit/s and above have been successfully demonstrated. Among them, electroabsorption (EA) modulators have shown their potential to fulfil these requirements.<>
{"title":"Integrated quantum well modulators for very high speed transmission systems","authors":"E. Zielinski, D. Baums, H. Haisch, M. Klenk, E. Kuhn, K. Satzke, M. Schilling","doi":"10.1109/ICIPRM.1994.328162","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328162","url":null,"abstract":"This paper summarises work currently performed within the European program RACE, under contract R2006 WELCOME, Quantum Well Components for High Speed Transmission Systems. The introduction of Integrated Broadband Communication (IBC) services requires solutions that enable high capacity transmission and distribution of information at low cost, including the integration and possible upgrade of existing networks. A currently discussed approach is based on direct detection schemes at very high bit rates on one optical carrier. Optical communication systems based on standard fibres presently achieve data rates of 10 Gbit/s. The most stringent limitation appears to be the dispersion of standard fibres which limits the bridgeable fibre length. Residual chirp which always accompanies intensity modulation has not only to be minimised. For adjustable low negative chirp, however, the maximum fibre length can be even increased above the dispersion limit of chirp-free fibre transmission. In the WELCOME project several approaches for transmission with direct detection and low chirp intensity modulation at bit rates of 10 Gbit/s and above have been successfully demonstrated. Among them, electroabsorption (EA) modulators have shown their potential to fulfil these requirements.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128892732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328304
G. Frankowsky, T. Wacker, A. Hangleiter, D. Ottenwalder, F. Scholz
Using spatially and spectrally resolved low-temperature cathodoluminescence, we have investigated GaInAs/InP quantum wells grown by selective epitaxy. For quantum wells with a nominal thickness of 0.6 nm we observe a splitting of the luminescence into several lines due to the presence of fluctuations in the quantum well thickness. On 1.75/spl times/1.75 mm/sup 2/ sized patterns we observe large monolayer flat terraces up to a size of 90 /spl mu/m.<>
{"title":"Steplike growth of monolayer terraces in GaInAs quantum wells grown by selective epitaxy","authors":"G. Frankowsky, T. Wacker, A. Hangleiter, D. Ottenwalder, F. Scholz","doi":"10.1109/ICIPRM.1994.328304","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328304","url":null,"abstract":"Using spatially and spectrally resolved low-temperature cathodoluminescence, we have investigated GaInAs/InP quantum wells grown by selective epitaxy. For quantum wells with a nominal thickness of 0.6 nm we observe a splitting of the luminescence into several lines due to the presence of fluctuations in the quantum well thickness. On 1.75/spl times/1.75 mm/sup 2/ sized patterns we observe large monolayer flat terraces up to a size of 90 /spl mu/m.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115400388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328259
J.J. Brown, M. Matloubian, T.K. Liu, L.M. Jelloian, A. Schmitz, R. G. Wilson, M. Lui, L. Larson, M. Melendes, M. Thompson
We report on the performance of a new class of InP-based HEMTs in which the conventional Al/sub x/In/sub 1-x/As Schottky barrier layer is replaced with Al/sub x/In/sub 1-x/P. The study of alternative Schottky barrier designs is aimed at improving the performance of InP-based HEMTs for applications that require high breakdown voltages, such as microwave power amplifiers. The typical low gate-to-drain breakdown voltage (BV/sub gd/) of <-5 V reported for Al/sub 0.48/In/sub 0.52/As/GaInPLs HEMTs limits the device performance for high power applications. A significant research effort has concentrated on improving BV/sub gd/ by increasing the aluminum concentration in the AlInAs layer. An increase in BV/sub gd/ from -5 V to -10 V has been achieved in our laboratory by increasing the aluminum concentration in the Al/sub x/In/sub 1-x/As Schottky layer from x=0.48 to x=0.70. Other researchers have reported BV/sub gd/ as high as -13 V for an In/sub 0.4/Al/sub 0.6/As/n+-InGaAs HFET with a gate length of 1.9 /spl mu/m. These breakdown voltages are, however, still much lower than typical values of BV/sub gd/>20 V reported for GaAs MESFETs and HEMTs. In addition, the increased Al concentration may limit both device reliability and yield due to poor gate metal adhesion to the Al-rich layer. Phosphorous containing materials are an attractive candidate for a wide bandgap Schottky layer design with low aluminum content. A pseudomorphic GaAs-based HEMT with Al/sub 0.52/In/sub 0.48/P barrier layer has been reported with BV/sub gd/ of -17 V and -10 V for 1.0 and 0.1 /spl mu/m long gate devices, respectively. More recently, a pseudomorphic channel InP HEMT with an Al/sub 0.2/In/sub 0.8/P barrier was reported with a BV/sub gd/=-15 V for a gate length of 0.5 /spl mu/m. In this paper, we present for the first time the performance of a Al/sub x/In/sub 1-x/P/AlInAs/GaInAs HEMT in which the channel is lattice matched to the InP substrate. We compare the performance of this new device with an Al/sub 0.6/In/sub 0.4/As/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0./$ d5/sub 3/As HMT to illustrate the improved device characteristics with the AlInP barrier layer.<>
{"title":"InP-based HEMTs with AlIn/sub 1-x/P Schottky barrier layers grown by gas-source MBE","authors":"J.J. Brown, M. Matloubian, T.K. Liu, L.M. Jelloian, A. Schmitz, R. G. Wilson, M. Lui, L. Larson, M. Melendes, M. Thompson","doi":"10.1109/ICIPRM.1994.328259","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328259","url":null,"abstract":"We report on the performance of a new class of InP-based HEMTs in which the conventional Al/sub x/In/sub 1-x/As Schottky barrier layer is replaced with Al/sub x/In/sub 1-x/P. The study of alternative Schottky barrier designs is aimed at improving the performance of InP-based HEMTs for applications that require high breakdown voltages, such as microwave power amplifiers. The typical low gate-to-drain breakdown voltage (BV/sub gd/) of <-5 V reported for Al/sub 0.48/In/sub 0.52/As/GaInPLs HEMTs limits the device performance for high power applications. A significant research effort has concentrated on improving BV/sub gd/ by increasing the aluminum concentration in the AlInAs layer. An increase in BV/sub gd/ from -5 V to -10 V has been achieved in our laboratory by increasing the aluminum concentration in the Al/sub x/In/sub 1-x/As Schottky layer from x=0.48 to x=0.70. Other researchers have reported BV/sub gd/ as high as -13 V for an In/sub 0.4/Al/sub 0.6/As/n+-InGaAs HFET with a gate length of 1.9 /spl mu/m. These breakdown voltages are, however, still much lower than typical values of BV/sub gd/>20 V reported for GaAs MESFETs and HEMTs. In addition, the increased Al concentration may limit both device reliability and yield due to poor gate metal adhesion to the Al-rich layer. Phosphorous containing materials are an attractive candidate for a wide bandgap Schottky layer design with low aluminum content. A pseudomorphic GaAs-based HEMT with Al/sub 0.52/In/sub 0.48/P barrier layer has been reported with BV/sub gd/ of -17 V and -10 V for 1.0 and 0.1 /spl mu/m long gate devices, respectively. More recently, a pseudomorphic channel InP HEMT with an Al/sub 0.2/In/sub 0.8/P barrier was reported with a BV/sub gd/=-15 V for a gate length of 0.5 /spl mu/m. In this paper, we present for the first time the performance of a Al/sub x/In/sub 1-x/P/AlInAs/GaInAs HEMT in which the channel is lattice matched to the InP substrate. We compare the performance of this new device with an Al/sub 0.6/In/sub 0.4/As/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0./$ d5/sub 3/As HMT to illustrate the improved device characteristics with the AlInP barrier layer.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115484791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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