Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328298
A. Lindner, Q. Liu, F. Scheffer, W. Prost, F. Tegude
Short-period strained layer superlattices (SPSLS) composed of binary materials have attracted considerable interest both for fundamental research and for potential device applications due to their capability of exhibiting the physical behavior of a binary in a horizontal and of a ternary in a vertical direction, respectively. A detailed analysis concerning LP-MOVPE growth and characterization of highly strained single layers and short-period strained-layer superlattices was made using the HRXRD method to determine layer thicknesses, layer quality and interface quality. Influence of growth times as well as period number and growth temperature on the shape of the rocking curves was studied and compared with computer aided simulations.<>
{"title":"Realization of highly strained short period InAs/GaAs superlattices by means of LP-MOVPE growth on InP substrates","authors":"A. Lindner, Q. Liu, F. Scheffer, W. Prost, F. Tegude","doi":"10.1109/ICIPRM.1994.328298","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328298","url":null,"abstract":"Short-period strained layer superlattices (SPSLS) composed of binary materials have attracted considerable interest both for fundamental research and for potential device applications due to their capability of exhibiting the physical behavior of a binary in a horizontal and of a ternary in a vertical direction, respectively. A detailed analysis concerning LP-MOVPE growth and characterization of highly strained single layers and short-period strained-layer superlattices was made using the HRXRD method to determine layer thicknesses, layer quality and interface quality. Influence of growth times as well as period number and growth temperature on the shape of the rocking curves was studied and compared with computer aided simulations.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131081425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328264
F. Scheffer, A. Lindner, C. Heedt, R. Reuter, Q. Liu, W. Prost, F. Tegude
InAlAs/InGaAs heterostructure field-effect transistors (HFET) lattice matched to InP-substrates are candidates for future low-noise microwave and opto-electronic integrated circuit applications. In order to combine them with metal-semiconductor-metal (MSM) detectors or laser diodes a high drain-voltage, high drain-current, low gate leakage and high voltage capability, respectively, is strongly required. Most work has been carried out on MBE grown samples with different Al- and In-content of the donor and the channel layer, respectively. Using the MOVPE technique the additional oxygen load in the InAlAs layer has to be taken into account which results in thin buffer layers. In this work we will show that highly strained In/sub 0.5/Ga/sub 0.5/P spacer layers are very attractive. Despite the large lattice mismatch and the group V exchange at the channel-spacer interface the transport data are not affected (/spl musub H, 300 K/=11300 cm/sup 2Vs, n/sub s/=2/spl times/10/sup 12/ cm/sup -2/). However the large band gap energy of In/sub 0.5/Ga/sub 0.5/P results in improved gate leakage, drain-conductance and drain breakdown. At V/sub DS/=10 V a voltage gain of v/sub u/>100 is maintained indicating the capability for high power HFET application on InP substrates.<>
{"title":"In/sub 0.5/Ga/sub 0.5/P spacer layer for high drain breakdown voltage InGaAs/InAlAs HFET on InP grown by MOVPE","authors":"F. Scheffer, A. Lindner, C. Heedt, R. Reuter, Q. Liu, W. Prost, F. Tegude","doi":"10.1109/ICIPRM.1994.328264","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328264","url":null,"abstract":"InAlAs/InGaAs heterostructure field-effect transistors (HFET) lattice matched to InP-substrates are candidates for future low-noise microwave and opto-electronic integrated circuit applications. In order to combine them with metal-semiconductor-metal (MSM) detectors or laser diodes a high drain-voltage, high drain-current, low gate leakage and high voltage capability, respectively, is strongly required. Most work has been carried out on MBE grown samples with different Al- and In-content of the donor and the channel layer, respectively. Using the MOVPE technique the additional oxygen load in the InAlAs layer has to be taken into account which results in thin buffer layers. In this work we will show that highly strained In/sub 0.5/Ga/sub 0.5/P spacer layers are very attractive. Despite the large lattice mismatch and the group V exchange at the channel-spacer interface the transport data are not affected (/spl musub H, 300 K/=11300 cm/sup 2Vs, n/sub s/=2/spl times/10/sup 12/ cm/sup -2/). However the large band gap energy of In/sub 0.5/Ga/sub 0.5/P results in improved gate leakage, drain-conductance and drain breakdown. At V/sub DS/=10 V a voltage gain of v/sub u/>100 is maintained indicating the capability for high power HFET application on InP substrates.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130926615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328167
Wei Jiang, Xunlang Liu, Shizhong Ye, Jianqun Zhao, Wenrong Sun, Huimei Cao, Dun Jin
InP is a very important III-V compound semiconductor, which is a material for increasing applications in opto-electronic fiber communications, opto-electronic integrated circuits (OEICs) and high frequency devices,such as HEMTs, HBTs and MISFETs. Most of these devices are fabricated by using epitaxial growth technologies, such as LPE, MBE, MOCVD and CBE. Epi-layer duality is key problem for them. Bromine-methanol polishing technology (1) for InP substrate is commonly used, but said bromine-methanol is not a good polishing solution, because of its severe corrosion, poison and unsatisfied flatness of the polished surface. These situations require a further development of InP polishing slurry to replace the bromine-methanol solution. Bromine-methanol polishing technology is basically a chemical polishing,not a mechano-chemical polishing. In this paper, we will mainly report a new nonpoisonous polishing slurry, H/sub 3/PO/sub 4/-based slurry. Mechano-chemical polishing for InP can be carried out by H/sub 3/PO/sub 4/-based slurry and ultra-flat LnP wafers have been obtained.<>
{"title":"A new nonpoisonous polishing slurry used in ultra-flat InP substrates production","authors":"Wei Jiang, Xunlang Liu, Shizhong Ye, Jianqun Zhao, Wenrong Sun, Huimei Cao, Dun Jin","doi":"10.1109/ICIPRM.1994.328167","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328167","url":null,"abstract":"InP is a very important III-V compound semiconductor, which is a material for increasing applications in opto-electronic fiber communications, opto-electronic integrated circuits (OEICs) and high frequency devices,such as HEMTs, HBTs and MISFETs. Most of these devices are fabricated by using epitaxial growth technologies, such as LPE, MBE, MOCVD and CBE. Epi-layer duality is key problem for them. Bromine-methanol polishing technology (1) for InP substrate is commonly used, but said bromine-methanol is not a good polishing solution, because of its severe corrosion, poison and unsatisfied flatness of the polished surface. These situations require a further development of InP polishing slurry to replace the bromine-methanol solution. Bromine-methanol polishing technology is basically a chemical polishing,not a mechano-chemical polishing. In this paper, we will mainly report a new nonpoisonous polishing slurry, H/sub 3/PO/sub 4/-based slurry. Mechano-chemical polishing for InP can be carried out by H/sub 3/PO/sub 4/-based slurry and ultra-flat LnP wafers have been obtained.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133106879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328239
W. Kruppa, J. B. Boos
The RF characteristics of impact ionization in AlSb/InAs HEMTs were examined by measuring the behavior of S/sub 22/ in the frequency range from 300 kHz to 3 GHz. By varying the drain bias, the onset of impact ionization can be clearly observed. In the ionization region, high gate current, inductive output impedance, current instability with hysteresis, and an increase in low-frequency noise were observed. With decreasing temperature, these effects diminish. The results were compared with measurements made on InAlAs/InGaAs/InP HEMTs. In both transistors, impact ionization as well as deep-level trapping were observed.<>
{"title":"RF measurement of impact ionization and its temperature dependence in AlSb/InAs HEMTs","authors":"W. Kruppa, J. B. Boos","doi":"10.1109/ICIPRM.1994.328239","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328239","url":null,"abstract":"The RF characteristics of impact ionization in AlSb/InAs HEMTs were examined by measuring the behavior of S/sub 22/ in the frequency range from 300 kHz to 3 GHz. By varying the drain bias, the onset of impact ionization can be clearly observed. In the ionization region, high gate current, inductive output impedance, current instability with hysteresis, and an increase in low-frequency noise were observed. With decreasing temperature, these effects diminish. The results were compared with measurements made on InAlAs/InGaAs/InP HEMTs. In both transistors, impact ionization as well as deep-level trapping were observed.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130200675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328180
J.L. Shen, S. Chang, S.C. Lee, Y.F. Chen
Raman scattering of In/sub x/Ga/sub 1-x/As epitaxial layers on InP and GaAs substrates have been investigated with a wide range of composition. It is found that the asymmetric broadening of LO phonon modes varies with composition as well as substrate. With the one-parameter spatial correlation model, the Raman lineshapes have been analyzed, but the fits showed some deviation to the experiments. Comparing the Raman spectra with the measurements of double-crystal X-ray diffraction (DXRD), we found that, besides the alloy disorder, the Raman lineshapes are also influenced by the structural dislocation. Our results provide a framework for the use of the two-parameter spatial correlation model in the study of the Raman spectra in epilayer structures.<>
{"title":"Study of asymmetric broadening of Raman scattering in In/sub x/Ga/sub 1-x/As/InP and In/sub x/Ga/sub 1-x/As/GaAs epilayers","authors":"J.L. Shen, S. Chang, S.C. Lee, Y.F. Chen","doi":"10.1109/ICIPRM.1994.328180","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328180","url":null,"abstract":"Raman scattering of In/sub x/Ga/sub 1-x/As epitaxial layers on InP and GaAs substrates have been investigated with a wide range of composition. It is found that the asymmetric broadening of LO phonon modes varies with composition as well as substrate. With the one-parameter spatial correlation model, the Raman lineshapes have been analyzed, but the fits showed some deviation to the experiments. Comparing the Raman spectra with the measurements of double-crystal X-ray diffraction (DXRD), we found that, besides the alloy disorder, the Raman lineshapes are also influenced by the structural dislocation. Our results provide a framework for the use of the two-parameter spatial correlation model in the study of the Raman spectra in epilayer structures.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"86 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131878560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328202
S. Kasai, H. Hasegawa
As compared with GaAs, the Schottky barriers on InP are generally not well behaved with low n-type Schottky barrier heights (SBH) and lack of reproducibility. Various approaches including use of special interfacial oxides have been tried to enhance SBH. However, many of such diodes suffer poor current transport characteristics, showing large leakage currents and low breakdown voltages. The values of the Richardson constant A** seems also to require attention according to a recent report. Therefore, not only SBH, but also the overall current transport including forward currents and reverse leakage currents should be optimized. The purpose of this paper is to attempt to control the SBH of the InP Schottky barrier by inserting a suitable interface control layer (ICL). For this purpose, various oxide ICLs formed by chemical etching, photochemical oxidation and laser-induced oxidation, and a semiconductor ICL utilizing an MBE grown ultrathin Si layer, were investigated. It is shown that the oxide ICL can enhance SBH to 0.7 eV for n-InP but with poor controllability of SBH. It was also found that the Richardson constant A** is anomalously small and that the reverse leakage current is large. On the other hand, Si ICL was found to be capable of controlling SBH in the range of 0-0.55 eV systematically by suitable doping into ICL, maintaining nearly ideal thermionic current transport.<>
{"title":"Optimization of interface control layer for InP Schottky barriers","authors":"S. Kasai, H. Hasegawa","doi":"10.1109/ICIPRM.1994.328202","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328202","url":null,"abstract":"As compared with GaAs, the Schottky barriers on InP are generally not well behaved with low n-type Schottky barrier heights (SBH) and lack of reproducibility. Various approaches including use of special interfacial oxides have been tried to enhance SBH. However, many of such diodes suffer poor current transport characteristics, showing large leakage currents and low breakdown voltages. The values of the Richardson constant A** seems also to require attention according to a recent report. Therefore, not only SBH, but also the overall current transport including forward currents and reverse leakage currents should be optimized. The purpose of this paper is to attempt to control the SBH of the InP Schottky barrier by inserting a suitable interface control layer (ICL). For this purpose, various oxide ICLs formed by chemical etching, photochemical oxidation and laser-induced oxidation, and a semiconductor ICL utilizing an MBE grown ultrathin Si layer, were investigated. It is shown that the oxide ICL can enhance SBH to 0.7 eV for n-InP but with poor controllability of SBH. It was also found that the Richardson constant A** is anomalously small and that the reverse leakage current is large. On the other hand, Si ICL was found to be capable of controlling SBH in the range of 0-0.55 eV systematically by suitable doping into ICL, maintaining nearly ideal thermionic current transport.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134627144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328166
N. Agrawal, M. Wegener
We report ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures with time constants on the order of 1 picosecond. This should be compared with the previous best values for the standard electron transfer structures in the range of 17-55 picoseconds. All other properties important for high speed applications, for example, electroabsorption and electrical behavior remain essentially unaffected.<>
{"title":"Ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures","authors":"N. Agrawal, M. Wegener","doi":"10.1109/ICIPRM.1994.328166","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328166","url":null,"abstract":"We report ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures with time constants on the order of 1 picosecond. This should be compared with the previous best values for the standard electron transfer structures in the range of 17-55 picoseconds. All other properties important for high speed applications, for example, electroabsorption and electrical behavior remain essentially unaffected.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134121414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328257
P. Ho, P.M. Smith, K. C. Hwang, S.C. Wang, M. Kao, P. Chao, S. Liu
We report the DC and power results for 0.1 /spl mu/m gate-length double heterojunction InAlAs/InGaAs HEMTs with lattice-matched, pseudomorphic and p-type InGaAs channels. At 60 GHz, 0.1 /spl mu/m/spl times/50 /spl mu/m HEMTs with a lattice-matched channel yielded peak power-added efficiency (PAE) of 49% with power density of 0.30 W/mm and power gain of 8.6 dB. When biased and tuned for maximum output power, the devices delivered 20.6 mW output power (0.41 W/mm power density) with 45% PAE and 8.0 dB power gain. The p-channel devices exhibited a lower output power density and efficiency due to the low channel current. The 200 /spl mu/m wide devices with pseudomorphic channel demonstrated 50% PAE with 6.7 dB power gain and 0.30 W/mm power density. Furthermore, the 400 /spl mu/m wide pseudomorphic channel devices delivered an output power of 192 mW (0.48 W/mm power density) with 30% PAE and 4.4 dB power gain. These results represent the highest PAE and power gain ever reported for any transistor at 60 GHz.<>
{"title":"60 GHz power performance of 0.1 /spl mu/m gate-length InAlAs/InGaAs HEMTs","authors":"P. Ho, P.M. Smith, K. C. Hwang, S.C. Wang, M. Kao, P. Chao, S. Liu","doi":"10.1109/ICIPRM.1994.328257","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328257","url":null,"abstract":"We report the DC and power results for 0.1 /spl mu/m gate-length double heterojunction InAlAs/InGaAs HEMTs with lattice-matched, pseudomorphic and p-type InGaAs channels. At 60 GHz, 0.1 /spl mu/m/spl times/50 /spl mu/m HEMTs with a lattice-matched channel yielded peak power-added efficiency (PAE) of 49% with power density of 0.30 W/mm and power gain of 8.6 dB. When biased and tuned for maximum output power, the devices delivered 20.6 mW output power (0.41 W/mm power density) with 45% PAE and 8.0 dB power gain. The p-channel devices exhibited a lower output power density and efficiency due to the low channel current. The 200 /spl mu/m wide devices with pseudomorphic channel demonstrated 50% PAE with 6.7 dB power gain and 0.30 W/mm power density. Furthermore, the 400 /spl mu/m wide pseudomorphic channel devices delivered an output power of 192 mW (0.48 W/mm power density) with 30% PAE and 4.4 dB power gain. These results represent the highest PAE and power gain ever reported for any transistor at 60 GHz.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"350 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132948717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328311
I. Tan, C. Reaves, J. J. Dudley, A. Holmes, D. Babic, E. Hu, J. Bowers, S. Denbaars
We have developed a low-temperature Pd bonding to integrate InP material with the GaAs substrate. The solid state reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterized by scanning electron microscopy, optical reflectance, and electrical transport.<>
{"title":"Low-temperature Pd direct bonding and electrical transport across InP-Pd-GaAs interfaces","authors":"I. Tan, C. Reaves, J. J. Dudley, A. Holmes, D. Babic, E. Hu, J. Bowers, S. Denbaars","doi":"10.1109/ICIPRM.1994.328311","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328311","url":null,"abstract":"We have developed a low-temperature Pd bonding to integrate InP material with the GaAs substrate. The solid state reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterized by scanning electron microscopy, optical reflectance, and electrical transport.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122352316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328256
D. Greenberg, J. D. del Alamo, R. Bhat
We have fabricated submicron InAlAs/n/sup +/-InP HFETs that employ an InP channel layer to eliminate impact ionization and thus reduce gate leakage, decrease drain conductance, and improve breakdown voltage. Under typical bias conditions, our L/sub g/=0.8 /spl mu/m devices achieve a low g/sub d/ of 5.1 mS/mm, leading to a voltage gain of 25, while the gate current never exceeds 17 /spl mu/A/mm. This is approximately a 60 times lower gate current than for typical InAlAs/InGaAs HEMTs, including edge isolated devices. Off-state drain source breakdown voltage is about 10 V at 1 mA/mm and increases as the device is turned on, confirming that impact ionization is negligible. Our results on a lattice-matched structure suggest considerable potential for optimization by using a strained insulator layer to reduce gate leakage and to improve breakdown still further.<>
{"title":"A submicron InAlAs/n/sup +/-InP HFET with reduced impact ionization","authors":"D. Greenberg, J. D. del Alamo, R. Bhat","doi":"10.1109/ICIPRM.1994.328256","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328256","url":null,"abstract":"We have fabricated submicron InAlAs/n/sup +/-InP HFETs that employ an InP channel layer to eliminate impact ionization and thus reduce gate leakage, decrease drain conductance, and improve breakdown voltage. Under typical bias conditions, our L/sub g/=0.8 /spl mu/m devices achieve a low g/sub d/ of 5.1 mS/mm, leading to a voltage gain of 25, while the gate current never exceeds 17 /spl mu/A/mm. This is approximately a 60 times lower gate current than for typical InAlAs/InGaAs HEMTs, including edge isolated devices. Off-state drain source breakdown voltage is about 10 V at 1 mA/mm and increases as the device is turned on, confirming that impact ionization is negligible. Our results on a lattice-matched structure suggest considerable potential for optimization by using a strained insulator layer to reduce gate leakage and to improve breakdown still further.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124902395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：