Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328161
M. Harlow, W. J. Duncan, I. Lealman, P. Spurdens
Growth of chromium doped InP by atmospheric pressure metal-organic vapour phase epitaxy is reported. Hexacarbonyl chromium and bis-benzene chromium are both shown to be efficient Cr precursors although significant co-incorporation of carbon is a limitation of the former. Structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3/spl times/10/sup 16/ cm/sup -3/ has been achieved. The resistivity of p-InP/Cr-InP/p-InP structures is as high as 3/spl times/10/sup 8/ /spl Omega/ cm. When this structure is incorporated in buried heterostructure lasers for current blocking, improved performance compared with conventional iron doped structures is observed.<>
{"title":"Growth of chromium doped semi-insulating InP by MOVPE","authors":"M. Harlow, W. J. Duncan, I. Lealman, P. Spurdens","doi":"10.1109/ICIPRM.1994.328161","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328161","url":null,"abstract":"Growth of chromium doped InP by atmospheric pressure metal-organic vapour phase epitaxy is reported. Hexacarbonyl chromium and bis-benzene chromium are both shown to be efficient Cr precursors although significant co-incorporation of carbon is a limitation of the former. Structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3/spl times/10/sup 16/ cm/sup -3/ has been achieved. The resistivity of p-InP/Cr-InP/p-InP structures is as high as 3/spl times/10/sup 8/ /spl Omega/ cm. When this structure is incorporated in buried heterostructure lasers for current blocking, improved performance compared with conventional iron doped structures is observed.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124948396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328268
S. Gu, E. Reuter, Q. Xu, R. Panepucci, H. Chang, A. Chen, I. Adesida, K. Cheng, S. G. Bishop
The spatial distribution of photo-excited carriers in dry etched InGaAs/InP quantum-well-dots (QWDs) has been investigated by photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging. High resolution e-beam lithography and CH/sub 4H/sub 2/ reactive ion etching were used to fabricate QWDs from multiple quantum well (MQW) heterostructures with GaAs well thicknesses ranging from 1 to 15 nm. Low temperature CL spectra from a single QWD stack provided a measure of the layer-to-layer variation in intensity in such MQW dots. Lateral distributions of emission intensity in single quantum dots and dot-to-dot variations in emission intensity have been obtained from CL line scans. The QWD PL intensity from the thicker, bottom QWDs in a stack is found to increase relative to the PL from the thinner, top QWDs with increasing excitation intensity and increasing temperature. This observation is attributed to the diffusion of carriers generated in the InP substrate into the bottom quantum wells. The PL spectra of all five 128 nm diameter QWDs in the MQW stacks exhibit a blueshift of about 3 meV at the lowest excitation intensity.<>
{"title":"Photoluminescence of InGaAs/InP quantum dots","authors":"S. Gu, E. Reuter, Q. Xu, R. Panepucci, H. Chang, A. Chen, I. Adesida, K. Cheng, S. G. Bishop","doi":"10.1109/ICIPRM.1994.328268","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328268","url":null,"abstract":"The spatial distribution of photo-excited carriers in dry etched InGaAs/InP quantum-well-dots (QWDs) has been investigated by photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging. High resolution e-beam lithography and CH/sub 4H/sub 2/ reactive ion etching were used to fabricate QWDs from multiple quantum well (MQW) heterostructures with GaAs well thicknesses ranging from 1 to 15 nm. Low temperature CL spectra from a single QWD stack provided a measure of the layer-to-layer variation in intensity in such MQW dots. Lateral distributions of emission intensity in single quantum dots and dot-to-dot variations in emission intensity have been obtained from CL line scans. The QWD PL intensity from the thicker, bottom QWDs in a stack is found to increase relative to the PL from the thinner, top QWDs with increasing excitation intensity and increasing temperature. This observation is attributed to the diffusion of carriers generated in the InP substrate into the bottom quantum wells. The PL spectra of all five 128 nm diameter QWDs in the MQW stacks exhibit a blueshift of about 3 meV at the lowest excitation intensity.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129574802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328233
J. J. Dudley, D. Babic, R. Mirin, L. Yang, B. Miller, E. Hu, J. Bowers
We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.<>
{"title":"Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates","authors":"J. J. Dudley, D. Babic, R. Mirin, L. Yang, B. Miller, E. Hu, J. Bowers","doi":"10.1109/ICIPRM.1994.328233","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328233","url":null,"abstract":"We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129029000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328155
E. Gaumont-Goarin, J. Jacquet, S. Adevah-Poeuf, C. Labourie, O. Le Gouezigou, F. Gaborit, F. Serre, C. Fortin, G. Ripoche, P. Pagnod, A. Jourdan, P. Ottolenghi, P. Landais, G. Duan
Wavelength conversion is a key function for optical switching using wavelength routing. Among the different solutions (gain saturation in semi-conductor amplifiers or in DBR lasers) bistable lasers based on saturable absorption are attractive with their signal reshaping capability but they have been limited in speed by the carrier lifetime of the absorption section. To overcome this limitation, we have optimised a proton bombardment technique of the saturable absorber and applied it to the realisation of (4 section) high speed bistable DBR lasers. Wavelength conversion is thus demonstrated at 1 Gbit/s together with Extinction Ratio regeneration.<>
{"title":"Proton bombardment technique for high speed (>1 Gbit/s) 4 section bistable DBR wavelength converter","authors":"E. Gaumont-Goarin, J. Jacquet, S. Adevah-Poeuf, C. Labourie, O. Le Gouezigou, F. Gaborit, F. Serre, C. Fortin, G. Ripoche, P. Pagnod, A. Jourdan, P. Ottolenghi, P. Landais, G. Duan","doi":"10.1109/ICIPRM.1994.328155","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328155","url":null,"abstract":"Wavelength conversion is a key function for optical switching using wavelength routing. Among the different solutions (gain saturation in semi-conductor amplifiers or in DBR lasers) bistable lasers based on saturable absorption are attractive with their signal reshaping capability but they have been limited in speed by the carrier lifetime of the absorption section. To overcome this limitation, we have optimised a proton bombardment technique of the saturable absorber and applied it to the realisation of (4 section) high speed bistable DBR lasers. Wavelength conversion is thus demonstrated at 1 Gbit/s together with Extinction Ratio regeneration.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127771681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328309
I. Kamiya
Due to the recent development of optical probes, monitoring of surface structures during organometallic chemical vapor deposition (OMCVD) has now become possible. Reflectance-difference spectroscopy (RDS) revealed that the (001)GaAs surface under OMCVD conditions reconstructs into structures similar or identical to those that occur in ultrahigh vacuum as encountered during molecular beam epitaxy (MBE). Here, the author reviews recent real-time studies on the OMCVD and MBE growth using RDS and complementary techniques such as grazing-incidence X-ray scattering.<>
{"title":"Optical monitoring of growth surfaces-reflectance-difference spectroscopy","authors":"I. Kamiya","doi":"10.1109/ICIPRM.1994.328309","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328309","url":null,"abstract":"Due to the recent development of optical probes, monitoring of surface structures during organometallic chemical vapor deposition (OMCVD) has now become possible. Reflectance-difference spectroscopy (RDS) revealed that the (001)GaAs surface under OMCVD conditions reconstructs into structures similar or identical to those that occur in ultrahigh vacuum as encountered during molecular beam epitaxy (MBE). Here, the author reviews recent real-time studies on the OMCVD and MBE growth using RDS and complementary techniques such as grazing-incidence X-ray scattering.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116046404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328195
S. Pearton, C. Abernathy, F. Ren
The electrical activation characteristics of Si/sup +/ and Be/sup +/ ions implanted into InGaAsP (/spl lambda/=1-3 /spl mu/m) grown lattice-matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5/spl times/10/sup 12/-5/spl times/10/sup 14/ cm/sup -2/), annealing time (3-60 sec) and annealing temperature (575-750/spl deg/C). Maximum doping concentrations of /spl sim/2/spl times/10/sup 19/ cm/sup -3/ were obtained for both Si/sup +/ and Be/sup +/, with activation energies for electrical activation of 0.58 eV and 0.39 eV, respectively. Multiple energy F/sup +/ or H/sup +/ implants can be used to produce high resistance layers for isolation purposes - maximum sheet resistances of /spl sim/8/spl times/10/sup 6/ /spl Omega/spl square/ or /spl sim/10/sup 6/ /spl Omega/spl square/ for initially p/sup +/ or n/sup +/InGaAsP, respectively, were obtained for F/sup +/ implants followed by annealing near 450/spl deg/C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH/sub 4H/sub 2Ar discharges at low DC biases. The etch rates are the same for both n/sup +/ and p/sup +/ quaternary layers and are independent of the doping level.<>
{"title":"Selective area processing of InGaAsP","authors":"S. Pearton, C. Abernathy, F. Ren","doi":"10.1109/ICIPRM.1994.328195","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328195","url":null,"abstract":"The electrical activation characteristics of Si/sup +/ and Be/sup +/ ions implanted into InGaAsP (/spl lambda/=1-3 /spl mu/m) grown lattice-matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5/spl times/10/sup 12/-5/spl times/10/sup 14/ cm/sup -2/), annealing time (3-60 sec) and annealing temperature (575-750/spl deg/C). Maximum doping concentrations of /spl sim/2/spl times/10/sup 19/ cm/sup -3/ were obtained for both Si/sup +/ and Be/sup +/, with activation energies for electrical activation of 0.58 eV and 0.39 eV, respectively. Multiple energy F/sup +/ or H/sup +/ implants can be used to produce high resistance layers for isolation purposes - maximum sheet resistances of /spl sim/8/spl times/10/sup 6/ /spl Omega/spl square/ or /spl sim/10/sup 6/ /spl Omega/spl square/ for initially p/sup +/ or n/sup +/InGaAsP, respectively, were obtained for F/sup +/ implants followed by annealing near 450/spl deg/C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH/sub 4H/sub 2Ar discharges at low DC biases. The etch rates are the same for both n/sup +/ and p/sup +/ quaternary layers and are independent of the doping level.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128080263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328191
Y. Sakamoto, H. Ninomiya, K. Matsuda, T. Sugino, J. Shirafuji
Deep electron trap levels in n-InP treated with remote hydrogen and helium plasmas have been studied by isothermal capacitance transient spectroscopy (ICTS) measurement. The trap levels at E/sub c/-0.51 eV (E2) and E/sub c/-0.54 eV (E4) are induced by both plasma treatment. However, the E4 traps are related to phosphorus vacancies and are fully passivated in H/sub 2/ plasma treated sample. The existence of the E4 traps in H/sub 2/-plasma-treated sample can be revealed after 350/spl deg/C annealing. It is found that the width of the surface region in which the E2 traps are dominantly introduced becomes thicker with increasing acceleration voltage of He ions.<>
用等温电容瞬态光谱(ICTS)测量方法研究了远距氢和氦等离子体处理的n-InP中的深电子阱能级。两种等离子体处理均可诱导E/sub c/-0.51 eV (E2)和E/sub c/-0.54 eV (E4)的阱能级。然而，E4陷阱与磷空位有关，并且在H/sub /等离子体处理的样品中完全钝化。等离子体处理后的样品经350℃退火后，发现E4陷阱的存在。研究发现，随着He离子加速电压的增加，E2陷阱的主要引入区宽度变厚。
{"title":"Characterization of plasma-induced traps in n-InP","authors":"Y. Sakamoto, H. Ninomiya, K. Matsuda, T. Sugino, J. Shirafuji","doi":"10.1109/ICIPRM.1994.328191","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328191","url":null,"abstract":"Deep electron trap levels in n-InP treated with remote hydrogen and helium plasmas have been studied by isothermal capacitance transient spectroscopy (ICTS) measurement. The trap levels at E/sub c/-0.51 eV (E2) and E/sub c/-0.54 eV (E4) are induced by both plasma treatment. However, the E4 traps are related to phosphorus vacancies and are fully passivated in H/sub 2/ plasma treated sample. The existence of the E4 traps in H/sub 2/-plasma-treated sample can be revealed after 350/spl deg/C annealing. It is found that the width of the surface region in which the E2 traps are dominantly introduced becomes thicker with increasing acceleration voltage of He ions.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128129921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328291
M. Hopkinson, J. David, O. P. Kowalski, D. Mowbray, M. S. Skolnick
Photoluminescence (PL), photoluminescence excitation (PLE) and X-ray diffraction (XRD) data on GaInP/Al(Ga)InP quantum wells (QW's) grown by solid source molecular beam epitaxy (SSMBE) is presented. The structural and optical properties of QW's grown with either ternary Al/sub 0.52/In/sub 0.48/P or quaternary (Al/sub x/Ga/sub 1-x/)/sub 0.52/In/sub 0.48/P (x/spl sim/0.53) barriers is contrasted. Both barrier types offer the prospect of high quality structures as demonstrated by narrow PL and XRD linewidths. The PL of thin QW's (/spl les/20 /spl Aring/) is however considerably degraded for the case of AlInP barriers due to reduced electron confinement compared to quaternary AlGaInP. PL and PLE measurements reveal a large Stokes' shift for these QW's, which is clear evidence for a change from type-I to type-II behavior. This observation, together with calculations based on PLE data for the E1-HH1 ground state energy, gives limits on the range of conduction band offsets that may be used which are consistent with the value /spl Delta/E/sub c/=0.67/spl Delta/E/sub g/ recently reported in the literature.<>
{"title":"Growth and characterisation of high quality GaInP/AlGaInP quantum wells by solid-source molecular beam epitaxy","authors":"M. Hopkinson, J. David, O. P. Kowalski, D. Mowbray, M. S. Skolnick","doi":"10.1109/ICIPRM.1994.328291","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328291","url":null,"abstract":"Photoluminescence (PL), photoluminescence excitation (PLE) and X-ray diffraction (XRD) data on GaInP/Al(Ga)InP quantum wells (QW's) grown by solid source molecular beam epitaxy (SSMBE) is presented. The structural and optical properties of QW's grown with either ternary Al/sub 0.52/In/sub 0.48/P or quaternary (Al/sub x/Ga/sub 1-x/)/sub 0.52/In/sub 0.48/P (x/spl sim/0.53) barriers is contrasted. Both barrier types offer the prospect of high quality structures as demonstrated by narrow PL and XRD linewidths. The PL of thin QW's (/spl les/20 /spl Aring/) is however considerably degraded for the case of AlInP barriers due to reduced electron confinement compared to quaternary AlGaInP. PL and PLE measurements reveal a large Stokes' shift for these QW's, which is clear evidence for a change from type-I to type-II behavior. This observation, together with calculations based on PLE data for the E1-HH1 ground state energy, gives limits on the range of conduction band offsets that may be used which are consistent with the value /spl Delta/E/sub c/=0.67/spl Delta/E/sub g/ recently reported in the literature.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"393 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116392589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328295
S. Sugou, Koichi Naniwae, T. Anan, Kenichi Nishi
InGaAs/InP or InGaAsP strained layer quantum well (QW) lasers showing enhanced performance over lattice matched lasers have been reported. With a larger compressive or tensile strain, while maintaining a well number, further performance improvements such as low threshold current are anticipated. To fabricate such highly strained multiple quantum well (MQW) structures, it is important both to realize abrupt interfaces and to minimize the average strain of the MQW stacks. We found a molecular beam switching sequence to form the abrupt QW interfaces, and the strain-compensation for both the interfacial strain and the average strain in InGaAs/In(Al)P MQW structures grown by gas source molecular beam epitaxy (GSMBE). This sequence dramatically improved InP/InGaAs heterointerface quality, which was confirmed by an increase in photoluminescence intensity and X-ray diffraction measurement in InGaAs/InP short period superlattice (SPS). Interfacial strain, which is generated by this sequence at every QW top interface, was successfully compensated by employing the different type bond at the QW bottom interfaces. Furthermore, the average strain-compensation was achieved by introducing tensile strain to barrier and the thermal stability for the compensated structure was also confirmed.<>
InGaAs/InP或InGaAsP应变层量子阱(QW)激光器比晶格匹配激光器表现出更高的性能。对于较大的压缩或拉伸应变，在保持井数的同时，期望进一步提高性能，如低阈值电流。为了制造这种高应变的多量子阱结构，实现突变界面和最小化多量子阱堆叠的平均应变是非常重要的。在气源分子束外延(GSMBE)生长的InGaAs/ in (Al)P MQW结构中，我们发现了形成突变QW界面的分子束开关序列，并对界面应变和平均应变进行了应变补偿。该序列显著提高了InP/InGaAs异质界面质量，这一点通过InGaAs/InP短周期超晶格(SPS)的光致发光强度和x射线衍射测量得到证实。该顺序在每个QW顶部界面产生的界面应变，通过在QW底部界面采用不同类型的键成功补偿。此外，通过在屏障上引入拉伸应变实现了平均应变补偿，并证实了补偿结构的热稳定性。
{"title":"Strain-compensations for interfacial strain and average strain in InGaAs/InAlP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy","authors":"S. Sugou, Koichi Naniwae, T. Anan, Kenichi Nishi","doi":"10.1109/ICIPRM.1994.328295","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328295","url":null,"abstract":"InGaAs/InP or InGaAsP strained layer quantum well (QW) lasers showing enhanced performance over lattice matched lasers have been reported. With a larger compressive or tensile strain, while maintaining a well number, further performance improvements such as low threshold current are anticipated. To fabricate such highly strained multiple quantum well (MQW) structures, it is important both to realize abrupt interfaces and to minimize the average strain of the MQW stacks. We found a molecular beam switching sequence to form the abrupt QW interfaces, and the strain-compensation for both the interfacial strain and the average strain in InGaAs/In(Al)P MQW structures grown by gas source molecular beam epitaxy (GSMBE). This sequence dramatically improved InP/InGaAs heterointerface quality, which was confirmed by an increase in photoluminescence intensity and X-ray diffraction measurement in InGaAs/InP short period superlattice (SPS). Interfacial strain, which is generated by this sequence at every QW top interface, was successfully compensated by employing the different type bond at the QW bottom interfaces. Furthermore, the average strain-compensation was achieved by introducing tensile strain to barrier and the thermal stability for the compensated structure was also confirmed.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117094464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328184
A. Kohl, A. Mesquida Kusters, S. Brittner, K. Heime, J. Finders, D. Gnoth, J. Geurts, J. Woitok
InP/InGaAs is a powerful material system for a variety of devices including HFETs. The quality of the heterointerface is very sensitive to growth parameters, especially to the switching sequence of the reactive gases. Improvement of the interface with respect to electron transport was achieved by growth interruptions without group-V stabilization of the surface before growth of the subsequent layer is started.<>
{"title":"Hydrogen purging during growth interruptions and its effect on electron transport in InP/InGaAs/InP HFETS grown by LP-MOVPE","authors":"A. Kohl, A. Mesquida Kusters, S. Brittner, K. Heime, J. Finders, D. Gnoth, J. Geurts, J. Woitok","doi":"10.1109/ICIPRM.1994.328184","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328184","url":null,"abstract":"InP/InGaAs is a powerful material system for a variety of devices including HFETs. The quality of the heterointerface is very sensitive to growth parameters, especially to the switching sequence of the reactive gases. Improvement of the interface with respect to electron transport was achieved by growth interruptions without group-V stabilization of the surface before growth of the subsequent layer is started.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123015189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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