Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328161
M. Harlow, W. J. Duncan, I. Lealman, P. Spurdens
Growth of chromium doped InP by atmospheric pressure metal-organic vapour phase epitaxy is reported. Hexacarbonyl chromium and bis-benzene chromium are both shown to be efficient Cr precursors although significant co-incorporation of carbon is a limitation of the former. Structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3/spl times/10/sup 16/ cm/sup -3/ has been achieved. The resistivity of p-InP/Cr-InP/p-InP structures is as high as 3/spl times/10/sup 8/ /spl Omega/ cm. When this structure is incorporated in buried heterostructure lasers for current blocking, improved performance compared with conventional iron doped structures is observed.<>
{"title":"Growth of chromium doped semi-insulating InP by MOVPE","authors":"M. Harlow, W. J. Duncan, I. Lealman, P. Spurdens","doi":"10.1109/ICIPRM.1994.328161","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328161","url":null,"abstract":"Growth of chromium doped InP by atmospheric pressure metal-organic vapour phase epitaxy is reported. Hexacarbonyl chromium and bis-benzene chromium are both shown to be efficient Cr precursors although significant co-incorporation of carbon is a limitation of the former. Structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3/spl times/10/sup 16/ cm/sup -3/ has been achieved. The resistivity of p-InP/Cr-InP/p-InP structures is as high as 3/spl times/10/sup 8/ /spl Omega/ cm. When this structure is incorporated in buried heterostructure lasers for current blocking, improved performance compared with conventional iron doped structures is observed.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124948396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328268
S. Gu, E. Reuter, Q. Xu, R. Panepucci, H. Chang, A. Chen, I. Adesida, K. Cheng, S. G. Bishop
The spatial distribution of photo-excited carriers in dry etched InGaAs/InP quantum-well-dots (QWDs) has been investigated by photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging. High resolution e-beam lithography and CH/sub 4H/sub 2/ reactive ion etching were used to fabricate QWDs from multiple quantum well (MQW) heterostructures with GaAs well thicknesses ranging from 1 to 15 nm. Low temperature CL spectra from a single QWD stack provided a measure of the layer-to-layer variation in intensity in such MQW dots. Lateral distributions of emission intensity in single quantum dots and dot-to-dot variations in emission intensity have been obtained from CL line scans. The QWD PL intensity from the thicker, bottom QWDs in a stack is found to increase relative to the PL from the thinner, top QWDs with increasing excitation intensity and increasing temperature. This observation is attributed to the diffusion of carriers generated in the InP substrate into the bottom quantum wells. The PL spectra of all five 128 nm diameter QWDs in the MQW stacks exhibit a blueshift of about 3 meV at the lowest excitation intensity.<>
{"title":"Photoluminescence of InGaAs/InP quantum dots","authors":"S. Gu, E. Reuter, Q. Xu, R. Panepucci, H. Chang, A. Chen, I. Adesida, K. Cheng, S. G. Bishop","doi":"10.1109/ICIPRM.1994.328268","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328268","url":null,"abstract":"The spatial distribution of photo-excited carriers in dry etched InGaAs/InP quantum-well-dots (QWDs) has been investigated by photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging. High resolution e-beam lithography and CH/sub 4H/sub 2/ reactive ion etching were used to fabricate QWDs from multiple quantum well (MQW) heterostructures with GaAs well thicknesses ranging from 1 to 15 nm. Low temperature CL spectra from a single QWD stack provided a measure of the layer-to-layer variation in intensity in such MQW dots. Lateral distributions of emission intensity in single quantum dots and dot-to-dot variations in emission intensity have been obtained from CL line scans. The QWD PL intensity from the thicker, bottom QWDs in a stack is found to increase relative to the PL from the thinner, top QWDs with increasing excitation intensity and increasing temperature. This observation is attributed to the diffusion of carriers generated in the InP substrate into the bottom quantum wells. The PL spectra of all five 128 nm diameter QWDs in the MQW stacks exhibit a blueshift of about 3 meV at the lowest excitation intensity.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129574802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328233
J. J. Dudley, D. Babic, R. Mirin, L. Yang, B. Miller, E. Hu, J. Bowers
We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.<>
{"title":"Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates","authors":"J. J. Dudley, D. Babic, R. Mirin, L. Yang, B. Miller, E. Hu, J. Bowers","doi":"10.1109/ICIPRM.1994.328233","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328233","url":null,"abstract":"We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129029000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328155
E. Gaumont-Goarin, J. Jacquet, S. Adevah-Poeuf, C. Labourie, O. Le Gouezigou, F. Gaborit, F. Serre, C. Fortin, G. Ripoche, P. Pagnod, A. Jourdan, P. Ottolenghi, P. Landais, G. Duan
Wavelength conversion is a key function for optical switching using wavelength routing. Among the different solutions (gain saturation in semi-conductor amplifiers or in DBR lasers) bistable lasers based on saturable absorption are attractive with their signal reshaping capability but they have been limited in speed by the carrier lifetime of the absorption section. To overcome this limitation, we have optimised a proton bombardment technique of the saturable absorber and applied it to the realisation of (4 section) high speed bistable DBR lasers. Wavelength conversion is thus demonstrated at 1 Gbit/s together with Extinction Ratio regeneration.<>
{"title":"Proton bombardment technique for high speed (>1 Gbit/s) 4 section bistable DBR wavelength converter","authors":"E. Gaumont-Goarin, J. Jacquet, S. Adevah-Poeuf, C. Labourie, O. Le Gouezigou, F. Gaborit, F. Serre, C. Fortin, G. Ripoche, P. Pagnod, A. Jourdan, P. Ottolenghi, P. Landais, G. Duan","doi":"10.1109/ICIPRM.1994.328155","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328155","url":null,"abstract":"Wavelength conversion is a key function for optical switching using wavelength routing. Among the different solutions (gain saturation in semi-conductor amplifiers or in DBR lasers) bistable lasers based on saturable absorption are attractive with their signal reshaping capability but they have been limited in speed by the carrier lifetime of the absorption section. To overcome this limitation, we have optimised a proton bombardment technique of the saturable absorber and applied it to the realisation of (4 section) high speed bistable DBR lasers. Wavelength conversion is thus demonstrated at 1 Gbit/s together with Extinction Ratio regeneration.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127771681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328309
I. Kamiya
Due to the recent development of optical probes, monitoring of surface structures during organometallic chemical vapor deposition (OMCVD) has now become possible. Reflectance-difference spectroscopy (RDS) revealed that the (001)GaAs surface under OMCVD conditions reconstructs into structures similar or identical to those that occur in ultrahigh vacuum as encountered during molecular beam epitaxy (MBE). Here, the author reviews recent real-time studies on the OMCVD and MBE growth using RDS and complementary techniques such as grazing-incidence X-ray scattering.<>
{"title":"Optical monitoring of growth surfaces-reflectance-difference spectroscopy","authors":"I. Kamiya","doi":"10.1109/ICIPRM.1994.328309","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328309","url":null,"abstract":"Due to the recent development of optical probes, monitoring of surface structures during organometallic chemical vapor deposition (OMCVD) has now become possible. Reflectance-difference spectroscopy (RDS) revealed that the (001)GaAs surface under OMCVD conditions reconstructs into structures similar or identical to those that occur in ultrahigh vacuum as encountered during molecular beam epitaxy (MBE). Here, the author reviews recent real-time studies on the OMCVD and MBE growth using RDS and complementary techniques such as grazing-incidence X-ray scattering.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116046404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328195
S. Pearton, C. Abernathy, F. Ren
The electrical activation characteristics of Si/sup +/ and Be/sup +/ ions implanted into InGaAsP (/spl lambda/=1-3 /spl mu/m) grown lattice-matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5/spl times/10/sup 12/-5/spl times/10/sup 14/ cm/sup -2/), annealing time (3-60 sec) and annealing temperature (575-750/spl deg/C). Maximum doping concentrations of /spl sim/2/spl times/10/sup 19/ cm/sup -3/ were obtained for both Si/sup +/ and Be/sup +/, with activation energies for electrical activation of 0.58 eV and 0.39 eV, respectively. Multiple energy F/sup +/ or H/sup +/ implants can be used to produce high resistance layers for isolation purposes - maximum sheet resistances of /spl sim/8/spl times/10/sup 6/ /spl Omega/spl square/ or /spl sim/10/sup 6/ /spl Omega/spl square/ for initially p/sup +/ or n/sup +/InGaAsP, respectively, were obtained for F/sup +/ implants followed by annealing near 450/spl deg/C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH/sub 4H/sub 2Ar discharges at low DC biases. The etch rates are the same for both n/sup +/ and p/sup +/ quaternary layers and are independent of the doping level.<>
{"title":"Selective area processing of InGaAsP","authors":"S. Pearton, C. Abernathy, F. Ren","doi":"10.1109/ICIPRM.1994.328195","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328195","url":null,"abstract":"The electrical activation characteristics of Si/sup +/ and Be/sup +/ ions implanted into InGaAsP (/spl lambda/=1-3 /spl mu/m) grown lattice-matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5/spl times/10/sup 12/-5/spl times/10/sup 14/ cm/sup -2/), annealing time (3-60 sec) and annealing temperature (575-750/spl deg/C). Maximum doping concentrations of /spl sim/2/spl times/10/sup 19/ cm/sup -3/ were obtained for both Si/sup +/ and Be/sup +/, with activation energies for electrical activation of 0.58 eV and 0.39 eV, respectively. Multiple energy F/sup +/ or H/sup +/ implants can be used to produce high resistance layers for isolation purposes - maximum sheet resistances of /spl sim/8/spl times/10/sup 6/ /spl Omega/spl square/ or /spl sim/10/sup 6/ /spl Omega/spl square/ for initially p/sup +/ or n/sup +/InGaAsP, respectively, were obtained for F/sup +/ implants followed by annealing near 450/spl deg/C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH/sub 4H/sub 2Ar discharges at low DC biases. The etch rates are the same for both n/sup +/ and p/sup +/ quaternary layers and are independent of the doping level.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128080263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328191
Y. Sakamoto, H. Ninomiya, K. Matsuda, T. Sugino, J. Shirafuji
Deep electron trap levels in n-InP treated with remote hydrogen and helium plasmas have been studied by isothermal capacitance transient spectroscopy (ICTS) measurement. The trap levels at E/sub c/-0.51 eV (E2) and E/sub c/-0.54 eV (E4) are induced by both plasma treatment. However, the E4 traps are related to phosphorus vacancies and are fully passivated in H/sub 2/ plasma treated sample. The existence of the E4 traps in H/sub 2/-plasma-treated sample can be revealed after 350/spl deg/C annealing. It is found that the width of the surface region in which the E2 traps are dominantly introduced becomes thicker with increasing acceleration voltage of He ions.<>
用等温电容瞬态光谱(ICTS)测量方法研究了远距氢和氦等离子体处理的n-InP中的深电子阱能级。两种等离子体处理均可诱导E/sub c/-0.51 eV (E2)和E/sub c/-0.54 eV (E4)的阱能级。然而，E4陷阱与磷空位有关，并且在H/sub /等离子体处理的样品中完全钝化。等离子体处理后的样品经350℃退火后，发现E4陷阱的存在。研究发现，随着He离子加速电压的增加，E2陷阱的主要引入区宽度变厚。
{"title":"Characterization of plasma-induced traps in n-InP","authors":"Y. Sakamoto, H. Ninomiya, K. Matsuda, T. Sugino, J. Shirafuji","doi":"10.1109/ICIPRM.1994.328191","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328191","url":null,"abstract":"Deep electron trap levels in n-InP treated with remote hydrogen and helium plasmas have been studied by isothermal capacitance transient spectroscopy (ICTS) measurement. The trap levels at E/sub c/-0.51 eV (E2) and E/sub c/-0.54 eV (E4) are induced by both plasma treatment. However, the E4 traps are related to phosphorus vacancies and are fully passivated in H/sub 2/ plasma treated sample. The existence of the E4 traps in H/sub 2/-plasma-treated sample can be revealed after 350/spl deg/C annealing. It is found that the width of the surface region in which the E2 traps are dominantly introduced becomes thicker with increasing acceleration voltage of He ions.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128129921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328200
L. Yang, K. Carey, M. Ludowise, W. Perez, D. Mars, J. Fouquet, K. Nauka, S. J. Rosner, Rajeev J Ram, J. J. Dudley, D. Babic, J. Bowers
Wafer bonding is a technique used to form a single hybrid solid from dissimilar materials by rearrangement of surface bonds. While the bonding of silicon-related material has been studied extensively, very little work was devoted to the III-V material system. We have successfully bonded InP and GaAs. In spite of the 3.7% lattice-mismatch, excellent material quality can be preserved less than 0.2 /spl mu/m away from the bonded interface. Transmission electron micrograph (TEM), deep level transient spectroscopy (DLTS), electron beam induced current (EBIC), photoluminescence (PL) and optical reflection measurements were used to characterize the bonded interface, and consistent results were obtained.<>
{"title":"Wafer bonding of InP and GaAs: interface characterization and device applications","authors":"L. Yang, K. Carey, M. Ludowise, W. Perez, D. Mars, J. Fouquet, K. Nauka, S. J. Rosner, Rajeev J Ram, J. J. Dudley, D. Babic, J. Bowers","doi":"10.1109/ICIPRM.1994.328200","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328200","url":null,"abstract":"Wafer bonding is a technique used to form a single hybrid solid from dissimilar materials by rearrangement of surface bonds. While the bonding of silicon-related material has been studied extensively, very little work was devoted to the III-V material system. We have successfully bonded InP and GaAs. In spite of the 3.7% lattice-mismatch, excellent material quality can be preserved less than 0.2 /spl mu/m away from the bonded interface. Transmission electron micrograph (TEM), deep level transient spectroscopy (DLTS), electron beam induced current (EBIC), photoluminescence (PL) and optical reflection measurements were used to characterize the bonded interface, and consistent results were obtained.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115142203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328291
M. Hopkinson, J. David, O. P. Kowalski, D. Mowbray, M. S. Skolnick
Photoluminescence (PL), photoluminescence excitation (PLE) and X-ray diffraction (XRD) data on GaInP/Al(Ga)InP quantum wells (QW's) grown by solid source molecular beam epitaxy (SSMBE) is presented. The structural and optical properties of QW's grown with either ternary Al/sub 0.52/In/sub 0.48/P or quaternary (Al/sub x/Ga/sub 1-x/)/sub 0.52/In/sub 0.48/P (x/spl sim/0.53) barriers is contrasted. Both barrier types offer the prospect of high quality structures as demonstrated by narrow PL and XRD linewidths. The PL of thin QW's (/spl les/20 /spl Aring/) is however considerably degraded for the case of AlInP barriers due to reduced electron confinement compared to quaternary AlGaInP. PL and PLE measurements reveal a large Stokes' shift for these QW's, which is clear evidence for a change from type-I to type-II behavior. This observation, together with calculations based on PLE data for the E1-HH1 ground state energy, gives limits on the range of conduction band offsets that may be used which are consistent with the value /spl Delta/E/sub c/=0.67/spl Delta/E/sub g/ recently reported in the literature.<>
{"title":"Growth and characterisation of high quality GaInP/AlGaInP quantum wells by solid-source molecular beam epitaxy","authors":"M. Hopkinson, J. David, O. P. Kowalski, D. Mowbray, M. S. Skolnick","doi":"10.1109/ICIPRM.1994.328291","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328291","url":null,"abstract":"Photoluminescence (PL), photoluminescence excitation (PLE) and X-ray diffraction (XRD) data on GaInP/Al(Ga)InP quantum wells (QW's) grown by solid source molecular beam epitaxy (SSMBE) is presented. The structural and optical properties of QW's grown with either ternary Al/sub 0.52/In/sub 0.48/P or quaternary (Al/sub x/Ga/sub 1-x/)/sub 0.52/In/sub 0.48/P (x/spl sim/0.53) barriers is contrasted. Both barrier types offer the prospect of high quality structures as demonstrated by narrow PL and XRD linewidths. The PL of thin QW's (/spl les/20 /spl Aring/) is however considerably degraded for the case of AlInP barriers due to reduced electron confinement compared to quaternary AlGaInP. PL and PLE measurements reveal a large Stokes' shift for these QW's, which is clear evidence for a change from type-I to type-II behavior. This observation, together with calculations based on PLE data for the E1-HH1 ground state energy, gives limits on the range of conduction band offsets that may be used which are consistent with the value /spl Delta/E/sub c/=0.67/spl Delta/E/sub g/ recently reported in the literature.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"393 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116392589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328252
S. Agarwala, I. Adesida, C. Caneau, R. Bhat
Due to the advances in lithography and dry processing technologies it is now possible to fabricate devices with lateral dimensions in the nanometer range. Dry processes such as reactive ion etching (RIE) or chemically assisted ion beam etching (CAIBE), are generally required to provide the etch anisotropy needed to define such small structures. Unfortunately, the energetic ions in these ion beam processes introduce crystal damage which results in deterioration of electronic and optoelectronic properties of the semiconductor material. In order to exploit the full potential of the dry processes it is very important to characterize and understand the process-induced damage. This is particularly true in III-V semiconductor structures, where thermal annealing is often ineffective for restoring crystalline order. At present, the mechanism of damage introduction during dry etch processes is not clearly understood. The damage extends well beyond the calculated projected ion ranges. In addition, in RIE the energy and the flux of ions bombarding the etched wafer can only be controlled indirectly by adjusting the rf power, the pressure etc. Unless special techniques are used to measure the ion energy distribution, only the maximum possible ion energy is known from the value of the self-bias voltage. Also, in most situations the nature of the ions, their fluxes or the ion/neutral ratio are unknown. This lack of information further complicates the prediction of the extent of damage. Thus, the significance of characterization of dry etch induced damage in the fabrication of devices cannot be overemphasized. In this paper, we report the study of RIE-induced damage in the InAlAs/InGaAs material system which has great potential for applications in microwave devices and long-wavelength optical communications due to its excellent transport properties.<>
{"title":"Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures","authors":"S. Agarwala, I. Adesida, C. Caneau, R. Bhat","doi":"10.1109/ICIPRM.1994.328252","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328252","url":null,"abstract":"Due to the advances in lithography and dry processing technologies it is now possible to fabricate devices with lateral dimensions in the nanometer range. Dry processes such as reactive ion etching (RIE) or chemically assisted ion beam etching (CAIBE), are generally required to provide the etch anisotropy needed to define such small structures. Unfortunately, the energetic ions in these ion beam processes introduce crystal damage which results in deterioration of electronic and optoelectronic properties of the semiconductor material. In order to exploit the full potential of the dry processes it is very important to characterize and understand the process-induced damage. This is particularly true in III-V semiconductor structures, where thermal annealing is often ineffective for restoring crystalline order. At present, the mechanism of damage introduction during dry etch processes is not clearly understood. The damage extends well beyond the calculated projected ion ranges. In addition, in RIE the energy and the flux of ions bombarding the etched wafer can only be controlled indirectly by adjusting the rf power, the pressure etc. Unless special techniques are used to measure the ion energy distribution, only the maximum possible ion energy is known from the value of the self-bias voltage. Also, in most situations the nature of the ions, their fluxes or the ion/neutral ratio are unknown. This lack of information further complicates the prediction of the extent of damage. Thus, the significance of characterization of dry etch induced damage in the fabrication of devices cannot be overemphasized. In this paper, we report the study of RIE-induced damage in the InAlAs/InGaAs material system which has great potential for applications in microwave devices and long-wavelength optical communications due to its excellent transport properties.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"280 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116453219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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