Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328286
S. Martin, P.R. Smith, M. Haner, R. Montgomery, R. Hamm, A. Feygenson, R.D. Yadvish
Recent progress in the growth and processing of InP-based heterostructures has led to the design of heterojunction bipolar transistors (HBTs) with typical cutoff frequencies in excess of 100 GHz and current gains of 50-100. Besides the high frequency performance, the noise properties of the devices are significant for their use in mixers, local oscillators or amplifiers. Extensive studies of noise in AlGaAs/GaAs HBTs have been reported, which suggest that the low frequency noise is often dominated by generation-recombination type of noise due to traps in GaAs. Measurements on InP/InGaAs HBTs have shown lower noise as compared to AlGaAs/GaAs HBTs and evidence for recombination noise due to shallow traps. We present here experimental results on the frequency dependence of noise in InP/InGaAs HBTs from 0.1 Hz to 1 MHz. The purpose of this work is to identify the significant noise sources and to determine their dependence on external biasing conditions.<>
{"title":"Low frequency noise and microwave properties of InP/InGaAs heterojunction bipolar transistors","authors":"S. Martin, P.R. Smith, M. Haner, R. Montgomery, R. Hamm, A. Feygenson, R.D. Yadvish","doi":"10.1109/ICIPRM.1994.328286","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328286","url":null,"abstract":"Recent progress in the growth and processing of InP-based heterostructures has led to the design of heterojunction bipolar transistors (HBTs) with typical cutoff frequencies in excess of 100 GHz and current gains of 50-100. Besides the high frequency performance, the noise properties of the devices are significant for their use in mixers, local oscillators or amplifiers. Extensive studies of noise in AlGaAs/GaAs HBTs have been reported, which suggest that the low frequency noise is often dominated by generation-recombination type of noise due to traps in GaAs. Measurements on InP/InGaAs HBTs have shown lower noise as compared to AlGaAs/GaAs HBTs and evidence for recombination noise due to shallow traps. We present here experimental results on the frequency dependence of noise in InP/InGaAs HBTs from 0.1 Hz to 1 MHz. The purpose of this work is to identify the significant noise sources and to determine their dependence on external biasing conditions.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125393140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328199
I. Tiginyanu, N. Pyshnaya, M. Calin, V. Ursaki
There has been increasing attention focused on the investigation of the /spl ap/0.4 eV electron trap in indium phosphide. According to G. Hirt et. al. (1993), the defect corresponding to that trap plays a major role in the conductivity compensation process of semiinsulating InP obtained by annealing of specially undoped crystals in phosphorus overpressure. The density of this defect seems to depend on the deviation of the sample composition from the stoichiometric one. Apart from that, fast-electron irradiation of InP single crystals leads to the Fermi-level pinning at energies E/sub pinn/ 0.3 to 0.4 eV below the bottom of the conduction band, this effect being explained by the predominance in the crystal lattice of a donor-like host defect having /spl ap/0.4 eV ionization energy. The defect involved appears to be inherent to semiinsulating InP:Fe as well. For instance, the activation energy derived from the temperature dependence of the dark conductivity in some InP:Fe single crystals equals 0.4 eV. At the same time one can note the absence of 0.4 eV electron trap among the deep levels evidenced recently in InP:Fe crystals by employing the thermally stimulated current (TSC) spectroscopy. The goal of this report is to present experimental data proving the existence of the 0.4 eV electron trap in as-grown and fast-electron (E=3.5-4 MeV) irradiated InP:Fe single crystals.<>
{"title":"Observation of 0.4 eV electron trap in electron-irradiated InP:Fe single crystals","authors":"I. Tiginyanu, N. Pyshnaya, M. Calin, V. Ursaki","doi":"10.1109/ICIPRM.1994.328199","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328199","url":null,"abstract":"There has been increasing attention focused on the investigation of the /spl ap/0.4 eV electron trap in indium phosphide. According to G. Hirt et. al. (1993), the defect corresponding to that trap plays a major role in the conductivity compensation process of semiinsulating InP obtained by annealing of specially undoped crystals in phosphorus overpressure. The density of this defect seems to depend on the deviation of the sample composition from the stoichiometric one. Apart from that, fast-electron irradiation of InP single crystals leads to the Fermi-level pinning at energies E/sub pinn/ 0.3 to 0.4 eV below the bottom of the conduction band, this effect being explained by the predominance in the crystal lattice of a donor-like host defect having /spl ap/0.4 eV ionization energy. The defect involved appears to be inherent to semiinsulating InP:Fe as well. For instance, the activation energy derived from the temperature dependence of the dark conductivity in some InP:Fe single crystals equals 0.4 eV. At the same time one can note the absence of 0.4 eV electron trap among the deep levels evidenced recently in InP:Fe crystals by employing the thermally stimulated current (TSC) spectroscopy. The goal of this report is to present experimental data proving the existence of the 0.4 eV electron trap in as-grown and fast-electron (E=3.5-4 MeV) irradiated InP:Fe single crystals.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123448435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328182
C. Klingelhofer, S. Krawczyk, F. Nuban, M. Gendry
A wide range of InAlAs/InGaAs/InAlAs/InP and InGaAs/InP lattice mismatched heterostructures with different thicknesses and compositions of the InGaAs layer were grown on InP (001) by Molecular Beam Epitaxy (MBE) and investigated with high spatial resolution spectrally resolved scanning photoluminescence. The objective of this contribution is to demonstrate that different types of extended defects (misfit dislocations, threading dislocations, oval-shaped defects) and structural micro-heterogeneity in the InGaAs layers induce significant short range changes of the spectral parameters of the photoluminescence bands.<>
{"title":"Demonstration of short range non-uniformities of the spectral parameters of photoluminescence bands in lattice mismatched InAlAs/InGaAs/InAlAs/InP heterostructures","authors":"C. Klingelhofer, S. Krawczyk, F. Nuban, M. Gendry","doi":"10.1109/ICIPRM.1994.328182","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328182","url":null,"abstract":"A wide range of InAlAs/InGaAs/InAlAs/InP and InGaAs/InP lattice mismatched heterostructures with different thicknesses and compositions of the InGaAs layer were grown on InP (001) by Molecular Beam Epitaxy (MBE) and investigated with high spatial resolution spectrally resolved scanning photoluminescence. The objective of this contribution is to demonstrate that different types of extended defects (misfit dislocations, threading dislocations, oval-shaped defects) and structural micro-heterogeneity in the InGaAs layers induce significant short range changes of the spectral parameters of the photoluminescence bands.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122365318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328176
A. Bensaada, R. Cochrane, R. Masut
We characterize sulfur diffusion from heavily doped (n/spl sim/10/sup 19/ cm/sup -3/) InP:S (001) substrates into nominally undoped Ga/sub x/In/sub 1-x/P (0/spl les/x/spl les/0.2) epilayers during growth by low-pressure MOCVD. The composition, relaxation and dislocation density of the samples have been studied by high resolution X-ray diffraction and in-depth doping profiles have been obtained using a C-V electrochemical profiler. The analysis of these profiles shows that as the Ga content of these thick (/spl sim/1 /spl mu/m) samples is increased, a rapid enhancement of the sulfur diffusion from the substrate is observed. This enhancement is a consequence of the generation of an increasing number of dislocations initially caused by the mismatch. The structural defects act as pipes inside which the diffusion coefficient (D/sub d/) of sulfur atoms is calculated to be 6 orders of magnitude higher than that of the undislocated material (D/sub l/). Value of D/sub lspl sim/2/spl times/10/sup -17/ cm/sup 2s at the growth temperature of 640/spl deg/C have been deduced.<>
{"title":"Dislocation-enhanced diffusion in heteroepitaxial GaInP/InP:S","authors":"A. Bensaada, R. Cochrane, R. Masut","doi":"10.1109/ICIPRM.1994.328176","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328176","url":null,"abstract":"We characterize sulfur diffusion from heavily doped (n/spl sim/10/sup 19/ cm/sup -3/) InP:S (001) substrates into nominally undoped Ga/sub x/In/sub 1-x/P (0/spl les/x/spl les/0.2) epilayers during growth by low-pressure MOCVD. The composition, relaxation and dislocation density of the samples have been studied by high resolution X-ray diffraction and in-depth doping profiles have been obtained using a C-V electrochemical profiler. The analysis of these profiles shows that as the Ga content of these thick (/spl sim/1 /spl mu/m) samples is increased, a rapid enhancement of the sulfur diffusion from the substrate is observed. This enhancement is a consequence of the generation of an increasing number of dislocations initially caused by the mismatch. The structural defects act as pipes inside which the diffusion coefficient (D/sub d/) of sulfur atoms is calculated to be 6 orders of magnitude higher than that of the undislocated material (D/sub l/). Value of D/sub lspl sim/2/spl times/10/sup -17/ cm/sup 2s at the growth temperature of 640/spl deg/C have been deduced.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128516535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328148
U. Mishra, J. Shealy
InP based HEMT technology has evolved from research in a few labs into the mainstream of high speed microwave and millimeter wave circuits. InP HEMTs produce lower noise figures, higher gain, and higher cut-off frequencies in comparison to the best GaAs based FETs. Recent improvement in the performance of the GaInAs-channel HEMT may be attributed to: (i) obtaining superior transport properties in higher In mole-fraction channels; (ii) reducing parasitic resistance by self-aligning the ohmic contacts to the gate; and (iii) reducing the gate-length while maintaining a high aspect ratio. These efforts combined have led to a successful fabrication of ultrafast 0.1 /spl mu/m gate-length HEMTs in the late 80's to present state-of-the-art 0.05 /spl mu/m gate-lengths in the early 90's. Consequently, they are now the most promising candidate for low noise amplifiers, millimeter wave power amplification, broadband distributed amplifiers, and high frequency oscillator circuits. A review of the low noise performance is presented along with recent diversification in the InP based HEMT technology to microwave and millimeter wave power amplification.<>
{"title":"InP-based HEMTs: status and potential","authors":"U. Mishra, J. Shealy","doi":"10.1109/ICIPRM.1994.328148","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328148","url":null,"abstract":"InP based HEMT technology has evolved from research in a few labs into the mainstream of high speed microwave and millimeter wave circuits. InP HEMTs produce lower noise figures, higher gain, and higher cut-off frequencies in comparison to the best GaAs based FETs. Recent improvement in the performance of the GaInAs-channel HEMT may be attributed to: (i) obtaining superior transport properties in higher In mole-fraction channels; (ii) reducing parasitic resistance by self-aligning the ohmic contacts to the gate; and (iii) reducing the gate-length while maintaining a high aspect ratio. These efforts combined have led to a successful fabrication of ultrafast 0.1 /spl mu/m gate-length HEMTs in the late 80's to present state-of-the-art 0.05 /spl mu/m gate-lengths in the early 90's. Consequently, they are now the most promising candidate for low noise amplifiers, millimeter wave power amplification, broadband distributed amplifiers, and high frequency oscillator circuits. A review of the low noise performance is presented along with recent diversification in the InP based HEMT technology to microwave and millimeter wave power amplification.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129692329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328303
T. Chiu, W. Tsang, R. Kapre, M.D. Williams, J. F. Ferguson
An etching process with real-time monitoring of each monolayer removed is demonstrated. The etching is accomplished by injecting AsCl/sub 3/ or PCl/sub 3/ gas directly into the growth chamber at a temperature comparable to the typical growth temperature in the same system. This method allows instant switching between the etch and the growth modes. The etching rate of GaAs is insensitive to the substrate temperature, which is important for a reproducible etching technology. A roughening mechanism of the etched surface due to a lack of cation diffusion is identified. Using a pulse etching mode and a migration enhanced smoothing, mirror like morphology has been obtained in the etching of InP. A layer-by-layer etching process and a in-situ monitoring technique at atomic scale are essential for a true monolayer etching technology.<>
{"title":"Monolayer control of chemical beam etching for regrowth","authors":"T. Chiu, W. Tsang, R. Kapre, M.D. Williams, J. F. Ferguson","doi":"10.1109/ICIPRM.1994.328303","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328303","url":null,"abstract":"An etching process with real-time monitoring of each monolayer removed is demonstrated. The etching is accomplished by injecting AsCl/sub 3/ or PCl/sub 3/ gas directly into the growth chamber at a temperature comparable to the typical growth temperature in the same system. This method allows instant switching between the etch and the growth modes. The etching rate of GaAs is insensitive to the substrate temperature, which is important for a reproducible etching technology. A roughening mechanism of the etched surface due to a lack of cation diffusion is identified. Using a pulse etching mode and a migration enhanced smoothing, mirror like morphology has been obtained in the etching of InP. A layer-by-layer etching process and a in-situ monitoring technique at atomic scale are essential for a true monolayer etching technology.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130726520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328171
J. L. de Miguel, E. Gomez-Salas, J.L. Martin
The expressions given by the kinematic theory of X-ray diffraction have been particularized to strained layers multiple quantum wells (SL-MQW) of GaInAs/GaInAsP. A procedure based on these expressions is proposed that, with a proper design of the test sample, yields the layer thicknesses and composition of the SL-MQW. This procedure is applied to a sample containing a 20 periods SL-MQW of GaInAs/GaInAsP emitting at 1.55 /spl mu/m, and the results double checked using the dynamical theory of X-ray diffraction. This procedure is used for the fast and accurate assessment of SL-MQW on a routine basis.<>
{"title":"Assessment of the structural parameters of GaInAs/GaInAsP strained layer multiquantum wells by X-ray diffraction","authors":"J. L. de Miguel, E. Gomez-Salas, J.L. Martin","doi":"10.1109/ICIPRM.1994.328171","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328171","url":null,"abstract":"The expressions given by the kinematic theory of X-ray diffraction have been particularized to strained layers multiple quantum wells (SL-MQW) of GaInAs/GaInAsP. A procedure based on these expressions is proposed that, with a proper design of the test sample, yields the layer thicknesses and composition of the SL-MQW. This procedure is applied to a sample containing a 20 periods SL-MQW of GaInAs/GaInAsP emitting at 1.55 /spl mu/m, and the results double checked using the dynamical theory of X-ray diffraction. This procedure is used for the fast and accurate assessment of SL-MQW on a routine basis.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131016330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328260
P. Rojo-Romeo, P. Viktorovitch, J. Leclercq, X. Letartre, J. Tardy, M. Oustric, M. Gendry
In this work, we present a study of various low-frequency noise (LFN) sources in InAlAs/InGaAs MODFET structures. The contributions of the main noise sources-drain and source contact resistance fluctuations, channel charge fluctuations and gate current noise-are separated by measuring the drain current power noise spectrum on uncompleted, gate free MODFET structures of different channel lengths. A variety of MBE grown structures was investigated: /spl delta/- and uniformly-doped MODFET's: devices with lattice-matched and strained channel. Also experiments were performed on devices with different source and drain ohmic contacts.<>
{"title":"Low frequency noise sources in InAlAs/InGaAs MODFET's","authors":"P. Rojo-Romeo, P. Viktorovitch, J. Leclercq, X. Letartre, J. Tardy, M. Oustric, M. Gendry","doi":"10.1109/ICIPRM.1994.328260","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328260","url":null,"abstract":"In this work, we present a study of various low-frequency noise (LFN) sources in InAlAs/InGaAs MODFET structures. The contributions of the main noise sources-drain and source contact resistance fluctuations, channel charge fluctuations and gate current noise-are separated by measuring the drain current power noise spectrum on uncompleted, gate free MODFET structures of different channel lengths. A variety of MBE grown structures was investigated: /spl delta/- and uniformly-doped MODFET's: devices with lattice-matched and strained channel. Also experiments were performed on devices with different source and drain ohmic contacts.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128764632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328244
K. Kohiro, K. Kainosho, R. Hirano, M. Uchida, S. Katsura, H. Kurita, T. Fukui, O. Oda
Recently, the quality of InP bulk crystals has been greatly improved. In this paper, recent developments of InP crystal technologies are reviewed, including growth of large crystals, reduction of dislocation densities, preparation of undoped semi-insulating (SI) materials and polishing qualities. We also discuss the status of InP against GaAs from the viewpoints of substrate qualities and the production capability.<>
{"title":"Bulk InP technologies: InP against GaAs","authors":"K. Kohiro, K. Kainosho, R. Hirano, M. Uchida, S. Katsura, H. Kurita, T. Fukui, O. Oda","doi":"10.1109/ICIPRM.1994.328244","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328244","url":null,"abstract":"Recently, the quality of InP bulk crystals has been greatly improved. In this paper, recent developments of InP crystal technologies are reviewed, including growth of large crystals, reduction of dislocation densities, preparation of undoped semi-insulating (SI) materials and polishing qualities. We also discuss the status of InP against GaAs from the viewpoints of substrate qualities and the production capability.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114225390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328242
S. Ojha, R. Turner, J. Stagg, D. Boyle, G. Thompson
Fabrication of integrated optoelectronic devices, such as for WDM applications, requires reliable and controlled processing and the integration of various components such as mirrors, gratings, waveguides, lasers and detectors. We have recently reported fabrication and device characteristics of a low loss multichannel demultiplexer. One of the key elements of this device was fabrication of low loss parabolic mirrors. An RIE process based on methane, hydrogen and carbon dioxide gases was developed for etching vertical mirrors through a double heterostructure. In this paper work we report development of processes, such as controlled dry etching of detector and shallow waveguides by using laser interferometer for process control, and masked overgrowth for active passive integration.<>
{"title":"Monitoring and control of fabrication processes for integrated optics devices","authors":"S. Ojha, R. Turner, J. Stagg, D. Boyle, G. Thompson","doi":"10.1109/ICIPRM.1994.328242","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328242","url":null,"abstract":"Fabrication of integrated optoelectronic devices, such as for WDM applications, requires reliable and controlled processing and the integration of various components such as mirrors, gratings, waveguides, lasers and detectors. We have recently reported fabrication and device characteristics of a low loss multichannel demultiplexer. One of the key elements of this device was fabrication of low loss parabolic mirrors. An RIE process based on methane, hydrogen and carbon dioxide gases was developed for etching vertical mirrors through a double heterostructure. In this paper work we report development of processes, such as controlled dry etching of detector and shallow waveguides by using laser interferometer for process control, and masked overgrowth for active passive integration.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126668391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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