Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328238
J. Dickmann, S. Schildberg, A. Geyer, B. Maile, A. Schurr, S. Heuthe, P. Narozny
A systematic investigation on the breakdown mechanisms in the on-state mode of operation of pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (0.53>
伪晶InAlAs/ in /sub x/Ga/sub 1-x/As(0.53>)导通模式击穿机理的系统研究
{"title":"Breakdown mechanisms in the on-state mode of operation of InAlAs/In/sub x/Ga/sub 1-x/As pseudomorphic HEMTs","authors":"J. Dickmann, S. Schildberg, A. Geyer, B. Maile, A. Schurr, S. Heuthe, P. Narozny","doi":"10.1109/ICIPRM.1994.328238","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328238","url":null,"abstract":"A systematic investigation on the breakdown mechanisms in the on-state mode of operation of pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (0.53<x<0.7) HEMTs is presented. From temperature- and composition dependent measurements and burn-out experiments it is demonstrated that on-state breakdown in these devices is dominated by impact ionization and that the location of on state breakdown is the channel layer. The on-state breakdown voltage drops with increasing indium mole fraction in the channel layer.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"264 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133878775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328282
J. Appenzeller, T. Schapers, H. Hardtdegen, B. Lengeler, H. Luth
We have fabricated mesoscopic rings in a strained high mobility In/sub 0.77/Ga/sub 0.23/As/InP heterostructure where periodic oscillations in the magnetoresistance due to the Aharonov-Bohm effect can be observed, although the one-dimensional transport regime with only one mode in the ring was not yet obtained. The influence of temperature and electron excess energy on the phase coherence length were investigated and could be explained by the phase breaking influence of electron-electron scattering events. We have shown that InGaAs/InP with its low electron mass is ideally suited for devices based on electron interference.<>
{"title":"Quantum transport in quasi one-dimensional In/sub 0.77/Ga/sub 0.23/As/InP rings","authors":"J. Appenzeller, T. Schapers, H. Hardtdegen, B. Lengeler, H. Luth","doi":"10.1109/ICIPRM.1994.328282","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328282","url":null,"abstract":"We have fabricated mesoscopic rings in a strained high mobility In/sub 0.77/Ga/sub 0.23/As/InP heterostructure where periodic oscillations in the magnetoresistance due to the Aharonov-Bohm effect can be observed, although the one-dimensional transport regime with only one mode in the ring was not yet obtained. The influence of temperature and electron excess energy on the phase coherence length were investigated and could be explained by the phase breaking influence of electron-electron scattering events. We have shown that InGaAs/InP with its low electron mass is ideally suited for devices based on electron interference.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127942209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328178
B. Beccard, W. Michel, G. Lengeling, D. Schmitz, H. Juergensen
The optimization of growth parameters for uniform deposition of GaInAs(P) compounds on InP has been topic of many reactor design studies up to the present. In most cases geometrical design provided optimization for only one of the compositional spectrum range of the Ga-In-As-P material family. The approaches were to compensate thermal distribution nonuniformities on the susceptors. These particularly cause compositional nonuniformities related to the temperature dependence in Ga/In or As/P distribution coefficients. This study was performed to get insight into the kinetic and transport processes in MOVPE reactors to have a general improvement for the entire material group of the InP based compound materials.<>
{"title":"Influences of external parameters on low pressure MOVPE growth results of InP based materials","authors":"B. Beccard, W. Michel, G. Lengeling, D. Schmitz, H. Juergensen","doi":"10.1109/ICIPRM.1994.328178","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328178","url":null,"abstract":"The optimization of growth parameters for uniform deposition of GaInAs(P) compounds on InP has been topic of many reactor design studies up to the present. In most cases geometrical design provided optimization for only one of the compositional spectrum range of the Ga-In-As-P material family. The approaches were to compensate thermal distribution nonuniformities on the susceptors. These particularly cause compositional nonuniformities related to the temperature dependence in Ga/In or As/P distribution coefficients. This study was performed to get insight into the kinetic and transport processes in MOVPE reactors to have a general improvement for the entire material group of the InP based compound materials.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115378111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328308
Y. Houng, M. Tan, B. Liang, S. Wang, D. Mars
Summary form only given. This paper reviews the pyrometric interferometry technique, and compares it with other in-situ and ex-situ methods for epitaxial growth monitoring and control. Highly reproducible vertical cavity surface emitting lasers (VCSEL) structures are used as an example to demonstrate the effectiveness of the in-situ monitoring and control technique. The authors use the pyrometric interferometry technique for in-situ monitoring and feedback control of layer thickness to obtain highly reproducible distributed Bragg reflectors (DBR) for 980- and 780-nm vertical cavity surface emitting lasers (VCSEL).<>
{"title":"In-situ monitoring and control for the growth of highly reproducible VCSEL structures","authors":"Y. Houng, M. Tan, B. Liang, S. Wang, D. Mars","doi":"10.1109/ICIPRM.1994.328308","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328308","url":null,"abstract":"Summary form only given. This paper reviews the pyrometric interferometry technique, and compares it with other in-situ and ex-situ methods for epitaxial growth monitoring and control. Highly reproducible vertical cavity surface emitting lasers (VCSEL) structures are used as an example to demonstrate the effectiveness of the in-situ monitoring and control technique. The authors use the pyrometric interferometry technique for in-situ monitoring and feedback control of layer thickness to obtain highly reproducible distributed Bragg reflectors (DBR) for 980- and 780-nm vertical cavity surface emitting lasers (VCSEL).<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115808120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328153
V. Jayaraman, M. Heimbuch, L. Coldren, S. Denbaars
We describe recent results in widely tunable sampled grating lasers grown with tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) column V sources. These devices exhibit 62 nm CW tuning range, 30-50 dB MSR, 10 mW output power, and monotonic tuning.<>
我们描述了用叔丁基膦(TBP)和叔丁基larsin (TBA)柱V源生长的广泛可调谐采样光栅激光器的最新结果。这些器件具有62 nm连续波调谐范围，30-50 dB MSR, 10 mW输出功率和单调调谐。
{"title":"Continuous-wave operation of sampled grating tunable lasers with 10 mwatt output power, >60 nm tuning, and monotonic tuning characteristics","authors":"V. Jayaraman, M. Heimbuch, L. Coldren, S. Denbaars","doi":"10.1109/ICIPRM.1994.328153","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328153","url":null,"abstract":"We describe recent results in widely tunable sampled grating lasers grown with tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) column V sources. These devices exhibit 62 nm CW tuning range, 30-50 dB MSR, 10 mW output power, and monotonic tuning.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1982 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125444460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328216
K. Streubel, J. Wallin, Gunnar Landgren, L. Zhu, U. Olander, Sebastian Lourdudoss, O. Kjebon
In this paper, we shall report on a systematic study on the impact of MOVPE growth conditions on the quality of strained GaInAsP/GaInAsP multi quantum well samples. Several growth parameters as well as the composition of the barrier material were varied independently. The optimized growth conditions were then applied to fabricate laser structures, incorporating similar MQW stacks as active region. The excellent performance of those devices will underline the high quality of the strained material and emphasize the importance of properly chosen growth parameters.<>
{"title":"High quality strained GaInAsP/GaInAsP quantum well laser structures grown by metal organic vapor phase epitaxy","authors":"K. Streubel, J. Wallin, Gunnar Landgren, L. Zhu, U. Olander, Sebastian Lourdudoss, O. Kjebon","doi":"10.1109/ICIPRM.1994.328216","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328216","url":null,"abstract":"In this paper, we shall report on a systematic study on the impact of MOVPE growth conditions on the quality of strained GaInAsP/GaInAsP multi quantum well samples. Several growth parameters as well as the composition of the barrier material were varied independently. The optimized growth conditions were then applied to fabricate laser structures, incorporating similar MQW stacks as active region. The excellent performance of those devices will underline the high quality of the strained material and emphasize the importance of properly chosen growth parameters.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125972302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328245
J.K. Luo, H. Thomas, S. Clark, R. Williams
The effect of thermal treatment on the electrical properties of Al/sub 0.48/In/sub 0.52/As/InP materials grown by molecular beam epitaxy (MBE) has been investigated using Schottky barrier structures. It was found that the intrinsic defects incorporated in MBE-AlInAs layers cause an excess tunneling current at forward and reverse bias, and are responsible for the low barrier height of Schottky diodes. Thermal annealing at T/sub A/>500/spl deg/C annihilates the major defects in the AlInAs layer, which results in a reduction of the excess tunneling current and enhancement of the barrier height. These results therefore, demonstrate a method to overcome the shortcomings introduced by defects and to improve the electrical properties of MBE-AlInAs materials.<>
{"title":"The effect of thermal treatment on the electrical properties of MBE-AlInAs","authors":"J.K. Luo, H. Thomas, S. Clark, R. Williams","doi":"10.1109/ICIPRM.1994.328245","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328245","url":null,"abstract":"The effect of thermal treatment on the electrical properties of Al/sub 0.48/In/sub 0.52/As/InP materials grown by molecular beam epitaxy (MBE) has been investigated using Schottky barrier structures. It was found that the intrinsic defects incorporated in MBE-AlInAs layers cause an excess tunneling current at forward and reverse bias, and are responsible for the low barrier height of Schottky diodes. Thermal annealing at T/sub A/>500/spl deg/C annihilates the major defects in the AlInAs layer, which results in a reduction of the excess tunneling current and enhancement of the barrier height. These results therefore, demonstrate a method to overcome the shortcomings introduced by defects and to improve the electrical properties of MBE-AlInAs materials.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122022675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328275
B. Rose, Franck Delorme, M. Gilleron, S. Grosmaire, D. Robein
Selective area epitaxy can be easily obtained at atmospheric pressure conditions by introducing a compound preventing nucleation on the masked areas or by choosing a proper set of mask size. These two approaches have been investigated and conclusions have been made on a laser and waveguide integration realisation.<>
{"title":"An application of selective area MOVPE at atmospheric pressure to the realisation of a DBR laser","authors":"B. Rose, Franck Delorme, M. Gilleron, S. Grosmaire, D. Robein","doi":"10.1109/ICIPRM.1994.328275","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328275","url":null,"abstract":"Selective area epitaxy can be easily obtained at atmospheric pressure conditions by introducing a compound preventing nucleation on the masked areas or by choosing a proper set of mask size. These two approaches have been investigated and conclusions have been made on a laser and waveguide integration realisation.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128116576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328209
S. Waldmuller, M. Lang, P. Wellmann, A. Winnacker
The authors determine the minority carrier lifetime (/spl tau/) in semi-insulating InP in an indirect way by analyzing the high energy tail of the photoluminescence spectrum and extracting a charge carrier temperature T/sub e/ from this data. T/sub e/ turns out to be directly related to /spl tau/, being small for large /spl tau/ and vice versa. It is shown that a) variations of the electron temperature can be observed in typical sample of LEC-grown InP:Fe, b) these variations can be analyzed in terms of charge carrier lifetimes, c) these temperature (and lifetime) variations can be correlated with the PL-intensity distribution and the Fe-distribution in the material.<>
{"title":"Spatial distribution of charge carrier temperature and lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy","authors":"S. Waldmuller, M. Lang, P. Wellmann, A. Winnacker","doi":"10.1109/ICIPRM.1994.328209","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328209","url":null,"abstract":"The authors determine the minority carrier lifetime (/spl tau/) in semi-insulating InP in an indirect way by analyzing the high energy tail of the photoluminescence spectrum and extracting a charge carrier temperature T/sub e/ from this data. T/sub e/ turns out to be directly related to /spl tau/, being small for large /spl tau/ and vice versa. It is shown that a) variations of the electron temperature can be observed in typical sample of LEC-grown InP:Fe, b) these variations can be analyzed in terms of charge carrier lifetimes, c) these temperature (and lifetime) variations can be correlated with the PL-intensity distribution and the Fe-distribution in the material.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131594444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328181
M. Rabiul Islam, J. Neff, R. Chelakara, R. Dupuis
The performance of semiconductor lasers can be significantly improved by using strained quantum wells as the active medium. A combination of biaxial strain and quantum confinement removes the valence band degeneracy at the center of the Brillouin zone and leads to anisotropy in the valence band effective masses parallel and perpendicular to the quantum well interfaces. This effect has been shown to reduce threshold current density and eliminate losses due to Auger recombination and inter-valence band absorption. AlGaP/GaP/InGaP/GaP strained layer single quantum well structures are necessary for one of the shortest wavelength light-emitting devices of the direct gap type among III-V semiconductors.<>
{"title":"MOCVD growth and characterization of AlGaP/GaP/InGaP/GaP strained-layer single quantum wells","authors":"M. Rabiul Islam, J. Neff, R. Chelakara, R. Dupuis","doi":"10.1109/ICIPRM.1994.328181","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328181","url":null,"abstract":"The performance of semiconductor lasers can be significantly improved by using strained quantum wells as the active medium. A combination of biaxial strain and quantum confinement removes the valence band degeneracy at the center of the Brillouin zone and leads to anisotropy in the valence band effective masses parallel and perpendicular to the quantum well interfaces. This effect has been shown to reduce threshold current density and eliminate losses due to Auger recombination and inter-valence band absorption. AlGaP/GaP/InGaP/GaP strained layer single quantum well structures are necessary for one of the shortest wavelength light-emitting devices of the direct gap type among III-V semiconductors.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125513791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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