Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328222
I. Adesida, J. Seo, W. Wohlmuth, C. Caneau, R. Bhat
Metal-semiconductor-metal (MSM) photodiodes have been shown to be excellent detectors for optoelectronic integrated circuits (OEIC's) due to their potential for high speed, ease of fabrication, and compatibility with FET process technologies (1). A major disadvantage of MSM detectors is their low responsivity due to the blocking of incoming optical radiation by opaque metal electrodes. Since the signal-to-noise ratio of an optical receiver is strongly dependent on the responsivity of the photodetector, it is important to devise techniques to maximize responsivity. Backside illumination has been shown to increase responsivity since there are no interfering electrodes on the back of the substrate (2). Another avenue to improve this factor is through the use of transparent electrodes for MSMs. This has been successfully applied to GaAs MSMs operating at 850 nm (3). In this paper, we present a study of InAlAs/InGaAs MSMs utilizing transparent indium tin oxide (ITO) and Ti/Au electrodes. Transmission in the ITO is as high as 99% which has resulted in a responsivity of 0.76 A/W for ITO MSMs which is double the responsivity of 0.39 A/W obtained for Ti/Au MSMs.<>
金属-半导体-金属(MSM)光电二极管已被证明是光电子集成电路(OEIC)的优秀探测器，因为它们具有高速，易于制造和与场效应管工艺技术兼容的潜力(1)。MSM探测器的一个主要缺点是由于不透明金属电极阻挡入射光辐射而导致其响应率低。由于光接收器的信噪比很大程度上取决于光电探测器的响应度，因此设计出最大化响应度的技术是很重要的。由于衬底背面没有干扰电极，背面照明已被证明可以提高响应度(2)。另一种改善这一因素的途径是通过使用透明电极用于msm。这已经成功地应用于工作在850 nm的GaAs msm(3)。在本文中，我们提出了利用透明氧化铟锡(ITO)和Ti/Au电极的InAlAs/InGaAs msm的研究。ITO中的透射率高达99%，这导致ITO mmsm的响应率为0.76 a /W，是Ti/Au mmsm的响应率0.39 a /W的两倍
{"title":"Long wavelength metal-semiconductor-metal photodetectors with Ti/Au and indium-tin-oxide electrodes","authors":"I. Adesida, J. Seo, W. Wohlmuth, C. Caneau, R. Bhat","doi":"10.1109/ICIPRM.1994.328222","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328222","url":null,"abstract":"Metal-semiconductor-metal (MSM) photodiodes have been shown to be excellent detectors for optoelectronic integrated circuits (OEIC's) due to their potential for high speed, ease of fabrication, and compatibility with FET process technologies (1). A major disadvantage of MSM detectors is their low responsivity due to the blocking of incoming optical radiation by opaque metal electrodes. Since the signal-to-noise ratio of an optical receiver is strongly dependent on the responsivity of the photodetector, it is important to devise techniques to maximize responsivity. Backside illumination has been shown to increase responsivity since there are no interfering electrodes on the back of the substrate (2). Another avenue to improve this factor is through the use of transparent electrodes for MSMs. This has been successfully applied to GaAs MSMs operating at 850 nm (3). In this paper, we present a study of InAlAs/InGaAs MSMs utilizing transparent indium tin oxide (ITO) and Ti/Au electrodes. Transmission in the ITO is as high as 99% which has resulted in a responsivity of 0.76 A/W for ITO MSMs which is double the responsivity of 0.39 A/W obtained for Ti/Au MSMs.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130007316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328170
S. Ochi, T. Kimura, T. Ishida, T. Sonoda, S. Takamiya, S. Mitsui
It is shown that the resistivity and the conduction type of undoped MOCVD Al/sub 0.48/In/sub 0.52/As layers depend strongly on the growth temperature (450/spl deg/C-650/spl deg/C). The conduction type changes from n-type, semi-insulating and p-type with the decrease of the growth temperature. High resistivity over 2/spl times/10/sup 8/ /spl Omega/-cm is successfully obtained from undoped Al/sub 0.48/In/sub 0.52/As layers grown at 500/spl deg/C. With help of SIMS and ICTS, it is found that the resistivity is substantially determined by the incorporation of carbon whose incorporation rate depends strongly on the growth temperature. The incorporated carbon compensates the native deep donors. The good selective growth of undoped Al/sub 0.48/In/sub 0.52/As layers is also achieved at even low growth temperature of 500/spl deg/C.<>
{"title":"High resistive undoped Al/sub 0.48/In/sub 0.52/As layers grown by MOCVD","authors":"S. Ochi, T. Kimura, T. Ishida, T. Sonoda, S. Takamiya, S. Mitsui","doi":"10.1109/ICIPRM.1994.328170","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328170","url":null,"abstract":"It is shown that the resistivity and the conduction type of undoped MOCVD Al/sub 0.48/In/sub 0.52/As layers depend strongly on the growth temperature (450/spl deg/C-650/spl deg/C). The conduction type changes from n-type, semi-insulating and p-type with the decrease of the growth temperature. High resistivity over 2/spl times/10/sup 8/ /spl Omega/-cm is successfully obtained from undoped Al/sub 0.48/In/sub 0.52/As layers grown at 500/spl deg/C. With help of SIMS and ICTS, it is found that the resistivity is substantially determined by the incorporation of carbon whose incorporation rate depends strongly on the growth temperature. The incorporated carbon compensates the native deep donors. The good selective growth of undoped Al/sub 0.48/In/sub 0.52/As layers is also achieved at even low growth temperature of 500/spl deg/C.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130022603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328316
B.X. Yang, T. Ozeki, H. Hasegawa
Based on the vast data concerning molecular beam epitaxial (MBE) growth of GaAs, it is usually assumed that the growth rate in III-V MBE is limited by supply of the group-III flux as long as sufficient group-V flux is provided. It is also assumed that the growth rate can be calibrated by the period of reflection high-energy electron diffraction (RHEED) oscillation. Presently, these two basic assumptions form the basis of the standard procedure for predetermination of the growth rate in MBE growth of III-V compounds and their related heterostructures and quantum wells. The purpose of this paper is to clarify the behavior of the growth rate during gas source MBE growth of InP on singular and vicinal substrates. RHEED oscillations during growths with various growth conditions were investigated and compared with the real growth rates obtained from direct measurements of the layer thicknesses. Furthermore, effects of both growth conditions and substrate misorientation on the layers' properties were examined by Hall effect measurements and photoluminescence (PL) measurements. It is shown that the above two assumptions based on GaAs MBE experiences are not necessarily true in gas source MBE growth of InP. Namely, the growth rate shows a marked dependence on phosphorus pressure, and the RHEED oscillation is very sensitive to the substrate misorientation. It is also shown that use of the vicinal substrates has significant effects on incorporation process of the adatoms into the grown layers.<>
{"title":"Behavior of InP growth by gas source molecular beam epitaxy on singular and vicinal substrates","authors":"B.X. Yang, T. Ozeki, H. Hasegawa","doi":"10.1109/ICIPRM.1994.328316","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328316","url":null,"abstract":"Based on the vast data concerning molecular beam epitaxial (MBE) growth of GaAs, it is usually assumed that the growth rate in III-V MBE is limited by supply of the group-III flux as long as sufficient group-V flux is provided. It is also assumed that the growth rate can be calibrated by the period of reflection high-energy electron diffraction (RHEED) oscillation. Presently, these two basic assumptions form the basis of the standard procedure for predetermination of the growth rate in MBE growth of III-V compounds and their related heterostructures and quantum wells. The purpose of this paper is to clarify the behavior of the growth rate during gas source MBE growth of InP on singular and vicinal substrates. RHEED oscillations during growths with various growth conditions were investigated and compared with the real growth rates obtained from direct measurements of the layer thicknesses. Furthermore, effects of both growth conditions and substrate misorientation on the layers' properties were examined by Hall effect measurements and photoluminescence (PL) measurements. It is shown that the above two assumptions based on GaAs MBE experiences are not necessarily true in gas source MBE growth of InP. Namely, the growth rate shows a marked dependence on phosphorus pressure, and the RHEED oscillation is very sensitive to the substrate misorientation. It is also shown that use of the vicinal substrates has significant effects on incorporation process of the adatoms into the grown layers.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130040395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328251
C. Abernathy, F. Ren, S. Pearton
Smooth, anisotropic dry etching of InN layers is demonstrated in low pressure (1-30 Torr) CH/sub 4H/sub 2/, Cl/sub 2H/sub 2/ or CCl/sub 2/F/sub 2Ar Electron Cyclotron Resonance discharges with additional dc biasing of the sample. Increasing the applied microwave power produces significant enhancements in etch rate. The presence of H/sub 2/ or F/sub 2/ in the gas chemistries is necessary to facilitate equi-rate removal of the group III and nitrogen etch products, leading to smooth surface morphologies. F/sup +/ implantation at doses of /spl sim/10/sup 15/ cm/sup -2/ produces sheet resistances >5/spl times/10/sup 3/ /spl Omega/spl square/ in initially degenerately n/sup +/(4/spl times/10/sup 20/ cm/sup -3/) InN, and values >10/sup 6/ /spl Omega/spl square/ in lower-doped (/spl les/3/spl times/10/sup 19/ cm/sup -3/) ternary alloys InGaN and InAlN.<>
{"title":"Implant isolation and dry etching of InN","authors":"C. Abernathy, F. Ren, S. Pearton","doi":"10.1109/ICIPRM.1994.328251","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328251","url":null,"abstract":"Smooth, anisotropic dry etching of InN layers is demonstrated in low pressure (1-30 Torr) CH/sub 4H/sub 2/, Cl/sub 2H/sub 2/ or CCl/sub 2/F/sub 2Ar Electron Cyclotron Resonance discharges with additional dc biasing of the sample. Increasing the applied microwave power produces significant enhancements in etch rate. The presence of H/sub 2/ or F/sub 2/ in the gas chemistries is necessary to facilitate equi-rate removal of the group III and nitrogen etch products, leading to smooth surface morphologies. F/sup +/ implantation at doses of /spl sim/10/sup 15/ cm/sup -2/ produces sheet resistances >5/spl times/10/sup 3/ /spl Omega/spl square/ in initially degenerately n/sup +/(4/spl times/10/sup 20/ cm/sup -3/) InN, and values >10/sup 6/ /spl Omega/spl square/ in lower-doped (/spl les/3/spl times/10/sup 19/ cm/sup -3/) ternary alloys InGaN and InAlN.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128916721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328315
B.‐T. Lee, R. Logan
Metalorganic vapor phase epitaxy (MOVPE) growth of InP and related materials on the patterned substrates has been studied in many recent investigations to understand how the growth sequences are modified by the presence of the patterns, which is essential information to establish the fabrication process of a wide variety of new optoelectronic devices. In this work, details of the growth patterns around etched grooves and mesas on InP substrates are reported during the atmospheric pressure (AP) MOVPE of InP layers. Parameters studied include trichloroethane (TCA) addition to the H/sub 2/ carrier, groove/mesa orientation ([110] vs. [11~0]), and the shape V-like and rectangular). Emphasis was placed on the planarization of the grown layers as well as the growth evolution within the grooves since these are the most important aspects of device application.<>
{"title":"Growth of InP on patterned substrates using AP-MOVPE","authors":"B.‐T. Lee, R. Logan","doi":"10.1109/ICIPRM.1994.328315","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328315","url":null,"abstract":"Metalorganic vapor phase epitaxy (MOVPE) growth of InP and related materials on the patterned substrates has been studied in many recent investigations to understand how the growth sequences are modified by the presence of the patterns, which is essential information to establish the fabrication process of a wide variety of new optoelectronic devices. In this work, details of the growth patterns around etched grooves and mesas on InP substrates are reported during the atmospheric pressure (AP) MOVPE of InP layers. Parameters studied include trichloroethane (TCA) addition to the H/sub 2/ carrier, groove/mesa orientation ([110] vs. [11~0]), and the shape V-like and rectangular). Emphasis was placed on the planarization of the grown layers as well as the growth evolution within the grooves since these are the most important aspects of device application.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129010592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328310
K. C. Hwang, A. Reisinger, K. Duh, M. Kao, P. Chao, P. Ho, A. Swanson
We have developed a reliable nitride passivation technique on the 0.1/spl times/50 /spl mu/m InAlAs/InGaAs/InP high electron mobility transistor (HEMT) using electron cyclotron resonance (ECR) microwave plasma chemical vapor deposition (CVD). The nitride film was characterized by Fourier transform infrared spectroscopy (FTIR). The stress in the film was measured from wafer curvature. The ECR SiN passivation has almost no effect on the noise and gain performance of 0.1 /spl mu/m InP-HEMTs at 60 GHz. DC accelerated life tests were performed at base temperatures of 225/spl deg/C and 245/spl deg/C. The Median-Time-To-Failure (MTF) based upon a failure criterion of g/sub m/=-20% leads to an Arrhenius plot with an activation energy of 1.6 eV and a projected life of 10/sup 6/ hours at 150/spl deg/C base plate temperature, which is the best median life time ever reported for passivated InP-HEMTs.<>
{"title":"A reliable ECR passivation technique on the 0.1 /spl mu/m InAlAs/InGaAs HEMT device","authors":"K. C. Hwang, A. Reisinger, K. Duh, M. Kao, P. Chao, P. Ho, A. Swanson","doi":"10.1109/ICIPRM.1994.328310","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328310","url":null,"abstract":"We have developed a reliable nitride passivation technique on the 0.1/spl times/50 /spl mu/m InAlAs/InGaAs/InP high electron mobility transistor (HEMT) using electron cyclotron resonance (ECR) microwave plasma chemical vapor deposition (CVD). The nitride film was characterized by Fourier transform infrared spectroscopy (FTIR). The stress in the film was measured from wafer curvature. The ECR SiN passivation has almost no effect on the noise and gain performance of 0.1 /spl mu/m InP-HEMTs at 60 GHz. DC accelerated life tests were performed at base temperatures of 225/spl deg/C and 245/spl deg/C. The Median-Time-To-Failure (MTF) based upon a failure criterion of g/sub m/=-20% leads to an Arrhenius plot with an activation energy of 1.6 eV and a projected life of 10/sup 6/ hours at 150/spl deg/C base plate temperature, which is the best median life time ever reported for passivated InP-HEMTs.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129213620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328284
J. Song, B.W.-P. Hong, C. Palmstrøm, K.B. Chough
Recent advances of carbon-doped InP/In/sub 0.53/Ga/sub 0.47/As singleand double-heterojunction bipolar transistor (SHBT and DHBT) technology, are reviewed. Chemical beam epitaxy (CBE) has been utilized to grow the device structures. Up to date, the SHBT having two 1.5 /spl mu/m/spl times/10 /spl mu/m emitter fingers has exhibited f/sub T/ and f/sub max(MAG/) of 186 GHz and 90 GHz, respectively. To our knowledge, the f/sub T/ of this device is the highest of any type of bipolar transistors yet reported. CW output power of 0.4 W (3.5 W/mm) with power-added efficiency of 36% has been achieved with the 12-finger DHBTs. The SMBT technology has been applied to realization of wideband amplifiers. A simple directly-coupled amplifier has shown a 3-dB bandwidth of over 20 GHz. The results indicate the great potential of carbon-doped base InP/InGaAs HBTs for high-speed and microwave applications.<>
{"title":"InP based carbon-doped base HBT technology: its recent advances and circuit applications","authors":"J. Song, B.W.-P. Hong, C. Palmstrøm, K.B. Chough","doi":"10.1109/ICIPRM.1994.328284","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328284","url":null,"abstract":"Recent advances of carbon-doped InP/In/sub 0.53/Ga/sub 0.47/As singleand double-heterojunction bipolar transistor (SHBT and DHBT) technology, are reviewed. Chemical beam epitaxy (CBE) has been utilized to grow the device structures. Up to date, the SHBT having two 1.5 /spl mu/m/spl times/10 /spl mu/m emitter fingers has exhibited f/sub T/ and f/sub max(MAG/) of 186 GHz and 90 GHz, respectively. To our knowledge, the f/sub T/ of this device is the highest of any type of bipolar transistors yet reported. CW output power of 0.4 W (3.5 W/mm) with power-added efficiency of 36% has been achieved with the 12-finger DHBTs. The SMBT technology has been applied to realization of wideband amplifiers. A simple directly-coupled amplifier has shown a 3-dB bandwidth of over 20 GHz. The results indicate the great potential of carbon-doped base InP/InGaAs HBTs for high-speed and microwave applications.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121141701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328157
É. Tournié, K. Ploog, N. Grandjean, J. Massies
The epitaxial growth of strained-layer heterostructures (SLHs) is currently under intense investigation, driven by the desire to obtain new physical properties different from those of the individual constituents of the structure. Much work is directed toward controlling the epitaxial morphology, i.e. the growth mode, of strained layers because this eventually governs the properties of SLHs. Surfactant-mediated molecular-beam epitaxy (SM-MBE) is a technique recently developed to face this challenge. We summarize the main results achieved with this approach in the field of III-V SLHs.<>
{"title":"Surfactant-mediated molecular-beam epitaxy of highly-strained III-V semiconductor heterostructures","authors":"É. Tournié, K. Ploog, N. Grandjean, J. Massies","doi":"10.1109/ICIPRM.1994.328157","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328157","url":null,"abstract":"The epitaxial growth of strained-layer heterostructures (SLHs) is currently under intense investigation, driven by the desire to obtain new physical properties different from those of the individual constituents of the structure. Much work is directed toward controlling the epitaxial morphology, i.e. the growth mode, of strained layers because this eventually governs the properties of SLHs. Surfactant-mediated molecular-beam epitaxy (SM-MBE) is a technique recently developed to face this challenge. We summarize the main results achieved with this approach in the field of III-V SLHs.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124451655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328306
C. Reaves, V. Bressler-Hill, M. Krishnamurthy, S. Varma, P. Petroff, W. Weinberg, S. Denbaars
The growth of InP on InGaP/GaAs(001) by metalorganic chemical vapor deposition (MOCVD) has been studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL). Islands with irregular dimensions on the growth surface but with uniform height are observed at low coverages. With increasing coverages, uniform coherent islands are observed with a dramatic increase in height. An appreciable density of large dislocated islands become evident at still higher coverages. Photoluminescence from these structures is discussed.<>
{"title":"InP islands on GaAs substrates: MOCVD growth of quantum-sized structures","authors":"C. Reaves, V. Bressler-Hill, M. Krishnamurthy, S. Varma, P. Petroff, W. Weinberg, S. Denbaars","doi":"10.1109/ICIPRM.1994.328306","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328306","url":null,"abstract":"The growth of InP on InGaP/GaAs(001) by metalorganic chemical vapor deposition (MOCVD) has been studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL). Islands with irregular dimensions on the growth surface but with uniform height are observed at low coverages. With increasing coverages, uniform coherent islands are observed with a dramatic increase in height. An appreciable density of large dislocated islands become evident at still higher coverages. Photoluminescence from these structures is discussed.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115254897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328237
D.G. Ballegeer, I. Adesida, C. Caneau, R. Bhat
Despite their superior high frequency performance, InAlAs/InGaAs modulation-doped field effect transistors (MODFETs) consistently exhibit high output conductances and low gain-to-drain breakdown voltages. Two main cap designs have been used when fabricating these devices to improve these characteristics. The first design is the use of an undoped or depleted cap which has the adverse effect of increasing both the drain and the source resistances. In order to preserve the high frequency characteristic of these devices, an alternate design, often called a "double-recess" design, may be used. This design features a wide recess trench in a doped cap which extends farther on the drain side of the gate than on the source side and is therefore asymmetric about the gate. This has the advantage of preserving a low source resistance while increasing the drain resistance to the desired value. However, this design often requires a separate lithography step to define the asymmetric recess trench. Previously, a unique electron beam process was developed and presented which is to date the only reported process which enables both the asymmetric recess to be made and a submicron T-shaped gate to be metallized in a single lithography step. The process, which utilizes multiple layers of electron beam resist, allows a great deal of control of the extent of the cap recess on the drain side of the gate without the need for an alignment between two separate lithography steps. In this paper, MODFETs are fabricated on OMVPE-grown InAlAs/InGaAs structure both with and without the use of this electron beam resist process in order to investigate the effects of asymmetric recess on device performance. The DC and high frequency characteristics of these devices are reported as a function of the extent of the gate recess toward the drain. Values for the small-signal equivalent circuit model elements extracted from high frequency S-parameter measurements are also presented.<>
{"title":"Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process","authors":"D.G. Ballegeer, I. Adesida, C. Caneau, R. Bhat","doi":"10.1109/ICIPRM.1994.328237","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328237","url":null,"abstract":"Despite their superior high frequency performance, InAlAs/InGaAs modulation-doped field effect transistors (MODFETs) consistently exhibit high output conductances and low gain-to-drain breakdown voltages. Two main cap designs have been used when fabricating these devices to improve these characteristics. The first design is the use of an undoped or depleted cap which has the adverse effect of increasing both the drain and the source resistances. In order to preserve the high frequency characteristic of these devices, an alternate design, often called a \"double-recess\" design, may be used. This design features a wide recess trench in a doped cap which extends farther on the drain side of the gate than on the source side and is therefore asymmetric about the gate. This has the advantage of preserving a low source resistance while increasing the drain resistance to the desired value. However, this design often requires a separate lithography step to define the asymmetric recess trench. Previously, a unique electron beam process was developed and presented which is to date the only reported process which enables both the asymmetric recess to be made and a submicron T-shaped gate to be metallized in a single lithography step. The process, which utilizes multiple layers of electron beam resist, allows a great deal of control of the extent of the cap recess on the drain side of the gate without the need for an alignment between two separate lithography steps. In this paper, MODFETs are fabricated on OMVPE-grown InAlAs/InGaAs structure both with and without the use of this electron beam resist process in order to investigate the effects of asymmetric recess on device performance. The DC and high frequency characteristics of these devices are reported as a function of the extent of the gate recess toward the drain. Values for the small-signal equivalent circuit model elements extracted from high frequency S-parameter measurements are also presented.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115718474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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