Pub Date : 2024-08-16DOI: 10.1557/s43578-024-01412-7
Muhammad Aqib Busharat, Shazia Shukrullah, Mohamed M. Makhlouf
A sol–gel technique was used to synthesize MZnFe2O4 (M = Ni, Mg, Mn) spinel ferrite composites. The post-synthesis sintering of the nanocomposites was done at 700 °C for 5 h, followed by non-thermal microwave plasma treatment for 60 min. X-ray diffraction (XRD) analysis of the nanocomposites was conducted to comprehend the cation distribution of pristine and plasma-modified nanocomposites. XRD intensity of peaks for (220), (311), (400) and (440) planes were used to determine the cations distribution using intensity ratio method. The plasma-modified nanocomposites showed a decrease in the intensity ratio of XRD peaks and an increase in the size of the crystallites. The plasma-modified ZnNiFeO4 showed a photocatalytic activity of 95% against RhB dye, ZnMgFe2O4 showed photocatalytic activity of 87%, and ZnMnFe2O4 showed a photocatalytic activity of 90%. The key drivers of high dye degradation efficiency are surface functionalization, removal of oxides and reduced band gap of the plasma-modified nanocomposites.
{"title":"Investigating cation distribution and photocatalytic response of non-thermal plasma treated MZnFe2O4(M = Ni, Mg, Mn) nanocomposite ferrites","authors":"Muhammad Aqib Busharat, Shazia Shukrullah, Mohamed M. Makhlouf","doi":"10.1557/s43578-024-01412-7","DOIUrl":"https://doi.org/10.1557/s43578-024-01412-7","url":null,"abstract":"<p>A sol–gel technique was used to synthesize MZnFe<sub>2</sub>O<sub>4</sub> (M = Ni, Mg, Mn) spinel ferrite composites. The post-synthesis sintering of the nanocomposites was done at 700 °C for 5 h, followed by non-thermal microwave plasma treatment for 60 min. X-ray diffraction (XRD) analysis of the nanocomposites was conducted to comprehend the cation distribution of pristine and plasma-modified nanocomposites. XRD intensity of peaks for (220), (311), (400) and (440) planes were used to determine the cations distribution using intensity ratio method. The plasma-modified nanocomposites showed a decrease in the intensity ratio of XRD peaks and an increase in the size of the crystallites. The plasma-modified ZnNiFeO<sub>4</sub> showed a photocatalytic activity of 95% against RhB dye, ZnMgFe<sub>2</sub>O<sub>4</sub> showed photocatalytic activity of 87%, and ZnMnFe<sub>2</sub>O<sub>4</sub> showed a photocatalytic activity of 90%. The key drivers of high dye degradation efficiency are surface functionalization, removal of oxides and reduced band gap of the plasma-modified nanocomposites.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"181 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142216702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1557/s43578-024-01417-2
Veerakumar Chinnasamy, Nayoung You, Honghyun Cho
Developing competent energy storage materials is crucial for efficient thermal energy storage and utilization. Microencapsulated lauryl alcohol as phase change material using SiO2 shell was prepared through a novel one-pot synthesis of interfacial polycondensation using tetraethyl orthosilicate as a shell precursor. The thermal properties were analyzed through differential scanning calorimetry, which revealed that the melting and freezing points of microcapsules were 23 °C and 18.9 °C, respectively. For melting and freezing, the estimated latent heats were 90 J g−1 and 88.2 J g−1, respectively. Thermogravimetric analysis confirms that the microcapsules are stable at a higher temperature. Besides, the leak test of the developed microcapsules was performed to investigate the stability during the melting process. Moreover, the prepared microcapsules (MPCM2) show stable and excellent thermophysical properties after 500 thermal cycles, which shows that the developed microcapsule is an ideal candidate for thermal energy storage.
{"title":"Development and thermophysical investigation of stable fatty alcohol/SiO2 phase change material microcapsules through interfacial polycondensation","authors":"Veerakumar Chinnasamy, Nayoung You, Honghyun Cho","doi":"10.1557/s43578-024-01417-2","DOIUrl":"https://doi.org/10.1557/s43578-024-01417-2","url":null,"abstract":"<p>Developing competent energy storage materials is crucial for efficient thermal energy storage and utilization. Microencapsulated lauryl alcohol as phase change material using SiO<sub>2</sub> shell was prepared through a novel one-pot synthesis of interfacial polycondensation using tetraethyl orthosilicate as a shell precursor. The thermal properties were analyzed through differential scanning calorimetry, which revealed that the melting and freezing points of microcapsules were 23 °C and 18.9 °C, respectively. For melting and freezing, the estimated latent heats were 90 J g<sup>−1</sup> and 88.2 J g<sup>−1</sup>, respectively. Thermogravimetric analysis confirms that the microcapsules are stable at a higher temperature. Besides, the leak test of the developed microcapsules was performed to investigate the stability during the melting process. Moreover, the prepared microcapsules (MPCM2) show stable and excellent thermophysical properties after 500 thermal cycles, which shows that the developed microcapsule is an ideal candidate for thermal energy storage.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"34 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142216705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1557/s43578-024-01410-9
Latifah Hamad Khalid Alfhaid, A. F. Qasrawi, Amjad Salamah M. Aljaloud
Herein, thin films of Nb2O5 are deposited onto semitransparent indium and glass substrates using the sputtering technique. Optical analyses revealed significant improvement in light absorption, displaying a maximum enhancement of 1900% at an incident photon energy of 2.29 eV. The dielectric constant of Nb2O5 is increased by 289% after coating onto indium substrates. In addition it increased the values of terahertz cutoff frequency making the In/Nb2O5 interfaces promising for use as optical band filters adequate for terahertz technology. On the other hand the experimentally designed In/Nb2O5/Ag antennas were tested in the frequency domain of 0.01–1.80 GHz. The antennas exhibited excellent performance across the quad-band range. The four lower bandstop edges of the AC transmission line are centered at 0.67 GHz, 1.19 GHz, 1.42 GHz, and 1.65 GHz. Additionally, the MIM antenna demonstrated a negative capacitance effect beneficial for canceling passive antenna modes, thereby resulting in high transmission rates with minimal power loss.
{"title":"In/Nb2O5 interfaces designed as enhanced broadband light absorbers, terahertz optical filters and quad band antennas","authors":"Latifah Hamad Khalid Alfhaid, A. F. Qasrawi, Amjad Salamah M. Aljaloud","doi":"10.1557/s43578-024-01410-9","DOIUrl":"https://doi.org/10.1557/s43578-024-01410-9","url":null,"abstract":"<p>Herein, thin films of Nb2O5 are deposited onto semitransparent indium and glass substrates using the sputtering technique. Optical analyses revealed significant improvement in light absorption, displaying a maximum enhancement of 1900% at an incident photon energy of 2.29 eV. The dielectric constant of Nb<sub>2</sub>O<sub>5</sub> is increased by 289% after coating onto indium substrates. In addition it increased the values of terahertz cutoff frequency making the In/Nb<sub>2</sub>O<sub>5</sub> interfaces promising for use as optical band filters adequate for terahertz technology. On the other hand the experimentally designed In/Nb<sub>2</sub>O<sub>5</sub>/Ag antennas were tested in the frequency domain of 0.01–1.80 GHz. The antennas exhibited excellent performance across the quad-band range. The four lower bandstop edges of the AC transmission line are centered at 0.67 GHz, 1.19 GHz, 1.42 GHz, and 1.65 GHz. Additionally, the MIM antenna demonstrated a negative capacitance effect beneficial for canceling passive antenna modes, thereby resulting in high transmission rates with minimal power loss.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>\u0000","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"4 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142227843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With mushrooming of wireless wearable devices, demand of efficient electromagnetic interference (EMI) shielding material gained much interest to obstruct the unwanted radiations. This paper reports the fabrication of CaCu3Ti4O12(CCTO)/CoFe2O4(CFO)/silicone composites and investigation of their dielectric and EMI shielding characteristics. The EMI shielding effectiveness and dielectric properties of prepared composites are evaluated for different compositions of CaCu3Ti4O12 (50, 35, 25, 15 wt%) and CoFe2O4 (0, 15, 25, 35 wt%) in silicone matrix. The dielectric constant found maximum (~ 50) for CCS-3 composite. The CaCu3Ti4O12/CoFe2O4/silicone composites (0 and 35% CoFe2O4) exhibited total shielding effectiveness (SET ~ 6 dB) corresponds to 75% shielding efficiency in X-band. By introducing magnetic filler with CaCu3Ti4O12 in silicone matrix, better EMI attenuation is remarkably achieved. The shielding mechanism displays synergistic contribution of magnetic particles, colossal dielectric particles, and insulating elastomeric matrix. This work provides an avenue for developing better electromagnetic radiation shielding material for wearable electronics, and dielectric resonators.
{"title":"Dielectric and electromagnetic shielding behavior of CaCu3Ti4O12/CoFe2O4/silicone rubber composites","authors":"Neelam Kumari, Shivali Meena, Amena Salim, Rahul Singhal, Vishant Gahlaut, Jigar Limbachiya, Bhuwaneshwar Semwal, Ravi Hegde, Umesh Kumar Dwivedi","doi":"10.1557/s43578-024-01416-3","DOIUrl":"https://doi.org/10.1557/s43578-024-01416-3","url":null,"abstract":"<p>With mushrooming of wireless wearable devices, demand of efficient electromagnetic interference (EMI) shielding material gained much interest to obstruct the unwanted radiations. This paper reports the fabrication of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub>(CCTO)/CoFe<sub>2</sub>O<sub>4</sub>(CFO)/silicone composites and investigation of their dielectric and EMI shielding characteristics. The EMI shielding effectiveness and dielectric properties of prepared composites are evaluated for different compositions of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> (50, 35, 25, 15 wt%) and CoFe<sub>2</sub>O<sub>4</sub> (0, 15, 25, 35 wt%) in silicone matrix. The dielectric constant found maximum (~ 50) for CCS-3 composite. The CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub>/CoFe<sub>2</sub>O<sub>4</sub>/silicone composites (0 and 35% CoFe<sub>2</sub>O<sub>4</sub>) exhibited total shielding effectiveness (SE<sub>T</sub> ~ 6 dB) corresponds to 75% shielding efficiency in X-band. By introducing magnetic filler with CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> in silicone matrix, better EMI attenuation is remarkably achieved. The shielding mechanism displays synergistic contribution of magnetic particles, colossal dielectric particles, and insulating elastomeric matrix. This work provides an avenue for developing better electromagnetic radiation shielding material for wearable electronics, and dielectric resonators.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"30 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142216704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1557/s43578-024-01415-4
Sumit Kumar, Neelam Singh, Suraj Kumar
The progress of the automated industry produces undesired electromagnetic interference (EMI) that distresses the end-users and functionality of electronic devices. This article develops new composite based on a polyaniline matrix and lithium-substituted magnesium ferrite (Mg0.8Li0.2Fe2O4) nanofiller. The composite was designed to contain both electric and magnetic sources by including polarizable groups in the PANI structure and by loading this matrix with magnetic nanoparticles, respectively. Magnetic analyses indicated a saturation magnetization and coercivity of 32.5 emu gm−1 and 32 Oe, respectively, for the ferrite nanoparticles which reduces to magnetization of 13.5 emu gm−1 with the composite formation. These novel composites are investigated from the point of view of their EMI shielding properties, showing the high shielding effectiveness of 73 dB in X-band frequency region. The composite’s remarkable shielding qualities make it a very promising material for a variety of applications, including radar absorption and stealth technology.
Graphical abstract
自动化工业的发展会产生不良的电磁干扰（EMI），对最终用户和电子设备的功能造成困扰。本文开发了基于聚苯胺基体和锂取代镁铁氧体（Mg0.8Li0.2Fe2O4）纳米填料的新型复合材料。通过在 PANI 结构中加入可极化基团以及在基体中加入磁性纳米颗粒，该复合材料被设计为同时包含电源和磁源。磁性分析表明，铁氧体纳米颗粒的饱和磁化率和矫顽力分别为 32.5 emu gm-1 和 32 Oe，在形成复合材料后，磁化率降低到 13.5 emu gm-1。从电磁干扰屏蔽特性的角度对这些新型复合材料进行了研究，结果表明其在 X 波段频率区域的屏蔽效能高达 73 dB。这种复合材料卓越的屏蔽性能使其成为一种非常有前途的材料，可用于雷达吸收和隐形技术等多种应用领域。
{"title":"Lithium-substituted magnesium ferrite-polyaniline nanocomposites for X-band electromagnetic interference shielding","authors":"Sumit Kumar, Neelam Singh, Suraj Kumar","doi":"10.1557/s43578-024-01415-4","DOIUrl":"https://doi.org/10.1557/s43578-024-01415-4","url":null,"abstract":"<p>The progress of the automated industry produces undesired electromagnetic interference (EMI) that distresses the end-users and functionality of electronic devices. This article develops new composite based on a polyaniline matrix and lithium-substituted magnesium ferrite (Mg0.8Li0.2Fe2O4) nanofiller. The composite was designed to contain both electric and magnetic sources by including polarizable groups in the PANI structure and by loading this matrix with magnetic nanoparticles, respectively. Magnetic analyses indicated a saturation magnetization and coercivity of 32.5 emu gm<sup>−1</sup> and 32 Oe, respectively, for the ferrite nanoparticles which reduces to magnetization of 13.5 emu gm<sup>−1</sup> with the composite formation. These novel composites are investigated from the point of view of their EMI shielding properties, showing the high shielding effectiveness of 73 dB in X-band frequency region. The composite’s remarkable shielding qualities make it a very promising material for a variety of applications, including radar absorption and stealth technology.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"23 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142216701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.1557/s43578-024-01407-4
Filip Tuomisto
Si is the n-type dopant of choice for GaN and β-Ga2O3. However, in (Al,Ga)N and β-(Al,Ga)2O3 alloys, when the Al content is increased, the n-type conductivity produced by the added Si impurities is efficiently compensated. The experimentally determined critical Al fractions are about 70% for the (Al,Ga)N alloys and as low as 25% for the β-(Al,Ga)2O3 alloys. AlN and Al2O3 are well known to be poorly n-type dopable even with Si, but the detailed compensation mechanisms in the alloys are not necessarily the same as in the compounds. This short review discusses recent research in Si-doped (Al,Ga)N and β-(Al,Ga)2O3 alloys in the light of the compensation phenomena caused by Si DX center and cation vacancy formation.
Graphical abstract
硅是氮化镓和 β-Ga2O3 的 n 型掺杂剂。然而，在（Al,Ga）N 和 β-（Al,Ga）2O3 合金中，当铝含量增加时，由添加的硅杂质产生的 n 型导电性会得到有效补偿。实验测定的临界铝含量在 (Al,Ga)N 合金中约为 70%，而在β-(Al,Ga)2O3 合金中则低至 25%。众所周知，AlN 和 Al2O3 与硅的 n 型掺杂性很差，但合金中的详细补偿机制并不一定与化合物中的补偿机制相同。这篇简短的综述从 Si DX 中心和阳离子空位形成引起的补偿现象出发，讨论了掺杂了 Si 的（Al,Ga）N 和 β-（Al,Ga）2O3 合金的最新研究。
{"title":"Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys","authors":"Filip Tuomisto","doi":"10.1557/s43578-024-01407-4","DOIUrl":"https://doi.org/10.1557/s43578-024-01407-4","url":null,"abstract":"<p>Si is the n-type dopant of choice for GaN and β-Ga<sub>2</sub>O<sub>3</sub>. However, in (Al,Ga)N and β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys, when the Al content is increased, the n-type conductivity produced by the added Si impurities is efficiently compensated. The experimentally determined critical Al fractions are about 70% for the (Al,Ga)N alloys and as low as 25% for the β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys. AlN and Al<sub>2</sub>O<sub>3</sub> are well known to be poorly n-type dopable even with Si, but the detailed compensation mechanisms in the alloys are not necessarily the same as in the compounds. This short review discusses recent research in Si-doped (Al,Ga)N and β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys in the light of the compensation phenomena caused by Si DX center and cation vacancy formation.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"7 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142216706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-02DOI: 10.1557/s43578-024-01401-w
Viviane Yim, Anna Mukhtarov, Nathalie Drogue, Delphine Autillo, Thierry Lardin, Marc Zussy, Jérôme Dechamp, Delphine Truffier-Boutry
Total X-Ray Fluorescence (TXRF) is a non-destructive technique for the characterization of metallic contaminants on bare silicon wafers. TXRF is sensible to roughness leading to a diffraction phenomenon. In this study, the effects of roughness on TXRF analysis were evaluated with various rough silicon wafers produced by microelectronic processes of grinding, wet cleaning and chemical mechanical polishing. TXRF parameters rise as roughness increases, starting from 3 nm RMS (Root Mean Square) roughness. On spectra, characteristic Si (silicon wafer) and W (TXRF anode) peaks widen. Secondary peaks, sum/escape peaks appear, inducing interferences with Al, Cu, Zn and background noise increases as well. Through intentionally contaminated grinded wafers (RMS 12 nm) by spin-coating at selected concentrations, it was observed that most of the elements are quantified at 1 × 1012 at/cm2. At concentrations of 1 × 1010 at/cm2 and 1 × 1011 at/cm2, only few elements are quantified due to the elevated background noise and interferences.
{"title":"TXRF capability of metallic contamination analysis on rough silicon wafers","authors":"Viviane Yim, Anna Mukhtarov, Nathalie Drogue, Delphine Autillo, Thierry Lardin, Marc Zussy, Jérôme Dechamp, Delphine Truffier-Boutry","doi":"10.1557/s43578-024-01401-w","DOIUrl":"https://doi.org/10.1557/s43578-024-01401-w","url":null,"abstract":"<p>Total X-Ray Fluorescence (TXRF) is a non-destructive technique for the characterization of metallic contaminants on bare silicon wafers. TXRF is sensible to roughness leading to a diffraction phenomenon. In this study, the effects of roughness on TXRF analysis were evaluated with various rough silicon wafers produced by microelectronic processes of grinding, wet cleaning and chemical mechanical polishing. TXRF parameters rise as roughness increases, starting from 3 nm RMS (Root Mean Square) roughness. On spectra, characteristic Si (silicon wafer) and W (TXRF anode) peaks widen. Secondary peaks, sum/escape peaks appear, inducing interferences with Al, Cu, Zn and background noise increases as well. Through intentionally contaminated grinded wafers (RMS 12 nm) by spin-coating at selected concentrations, it was observed that most of the elements are quantified at 1 × 10<sup>12</sup> at/cm<sup>2</sup>. At concentrations of 1 × 10<sup>10</sup> at/cm<sup>2</sup> and 1 × 10<sup>11</sup> at/cm<sup>2</sup>, only few elements are quantified due to the elevated background noise and interferences.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"2018 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141881246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-01DOI: 10.1557/s43578-024-01402-9
Dita Deme Degefa, Nebiyu Bogale Mereke, Mesfin Zewdu Biweta, Zeinu Ahmed Rabba, Mulualem Abebe Mekonnen
This research article explores the comprehensive characterization of Mg8Si4 and Sr2Mg6Si8 systems, delving into their structural, electrical, dynamical, optical, and thermoelectric properties. Employing GGA and HSE06 hybrid functional calculations alongside semiclassical Boltzmann technique calculations, the study reveals intriguing insights. Through examination of cohesive and formation energies, it is established that Sr2Mg6Si8 exhibits the most stable condition. Phonon dispersion confirms the structural stability of both compounds. Mg8Si4 possesses an indirect band gap of 0.222 eV, whereas Sr2Mg6Si8 showcases a direct band gap of 0.752 eV under HSE06 analysis. Notably, Sr2Mg6Si8 displays superior electrical conductivity and Seebeck coefficient despite low lattice thermal conductivity, resulting in a promising thermoelectric figure of merit (ZT) of 0.64 at 700 K. Moreover, the composition Sr2Mg6Si4 exhibits a notable Power Factor of 4 × 1012 WK−2 m−1 s−1 at 700 K, highlighting its potential for thermoelectric applications.
{"title":"Investigation of structural, electrical, dynamical, optical, and thermoelectric properties of Sr-doped Mg2Si systems using first-principles calculations","authors":"Dita Deme Degefa, Nebiyu Bogale Mereke, Mesfin Zewdu Biweta, Zeinu Ahmed Rabba, Mulualem Abebe Mekonnen","doi":"10.1557/s43578-024-01402-9","DOIUrl":"https://doi.org/10.1557/s43578-024-01402-9","url":null,"abstract":"<p>This research article explores the comprehensive characterization of Mg<sub>8</sub>Si<sub>4</sub> and Sr<sub>2</sub>Mg<sub>6</sub>Si<sub>8</sub> systems, delving into their structural, electrical, dynamical, optical, and thermoelectric properties. Employing GGA and HSE06 hybrid functional calculations alongside semiclassical Boltzmann technique calculations, the study reveals intriguing insights. Through examination of cohesive and formation energies, it is established that Sr<sub>2</sub>Mg<sub>6</sub>Si<sub>8</sub> exhibits the most stable condition. Phonon dispersion confirms the structural stability of both compounds. Mg8Si4 possesses an indirect band gap of 0.222 eV, whereas Sr<sub>2</sub>Mg<sub>6</sub>Si<sub>8</sub> showcases a direct band gap of 0.752 eV under HSE06 analysis. Notably, Sr2Mg6Si8 displays superior electrical conductivity and Seebeck coefficient despite low lattice thermal conductivity, resulting in a promising thermoelectric figure of merit (ZT) of 0.64 at 700 K. Moreover, the composition Sr2Mg6Si4 exhibits a notable Power Factor of 4 × 10<sup>12</sup> WK<sup>−2</sup> m<sup>−1</sup> s<sup>−1</sup> at 700 K, highlighting its potential for thermoelectric applications.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"24 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141870623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, In718/LaB6 composite coatings with LaB6 content of 0–8 wt% were prepared on In718 substrate by laser cladding method, and the mechanism of LaB6 strengthening of In718 nickel-based high-temperature alloy was investigated by studying the phase composition, microstructure, microhardness, and wear resistance of the coatings. The results show that the addition of LaB6 reduces the G/R ratio and promotes the formation of equiaxed grains. The best wear resistance was achieved at 6 wt% of LaB6, with a wear rate of 4.59 × 10−4 mm3/N m. The maximum microhardness of the coating was achieved at 8 wt%, with an increase of 52.7% in the average microhardness as compared to that of the substrate. However, the excessive addition of LaB6 promotes a non-uniform tissue distribution, which negatively affects the wear resistance of the coatings.
{"title":"Effect of LaB6 on the microstructure and wear resistance of In718/LaB6 composite coatings by laser cladding","authors":"Chenhui Cui, Meiping Wu, Hang Wang, Dadong Jie, Xin jin, Xiaojin Miao","doi":"10.1557/s43578-024-01392-8","DOIUrl":"https://doi.org/10.1557/s43578-024-01392-8","url":null,"abstract":"<p>In this study, In718/LaB<sub>6</sub> composite coatings with LaB<sub>6</sub> content of 0–8 wt% were prepared on In718 substrate by laser cladding method, and the mechanism of LaB<sub>6</sub> strengthening of In718 nickel-based high-temperature alloy was investigated by studying the phase composition, microstructure, microhardness, and wear resistance of the coatings. The results show that the addition of LaB<sub>6</sub> reduces the G/R ratio and promotes the formation of equiaxed grains. The best wear resistance was achieved at 6 wt% of LaB<sub>6</sub>, with a wear rate of 4.59 × 10<sup>−4</sup> mm<sup>3</sup>/N m. The maximum microhardness of the coating was achieved at 8 wt%, with an increase of 52.7% in the average microhardness as compared to that of the substrate. However, the excessive addition of LaB<sub>6</sub> promotes a non-uniform tissue distribution, which negatively affects the wear resistance of the coatings.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"1 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141870624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-31DOI: 10.1557/s43578-024-01405-6
Soni, S. K. Sharma, S. K. Mishra
Nanocomposite Al–Si–N thin films were deposited on SS 304, silicon and quartz substrates through magnetron sputtering. Silicon addition in AlN has transformed the coating structure from a single-phase coating into a nanocomposite structured film. It affected the phase formation and interband electronic transition in the Al–Si–N thin film. XPS study suggests the formation of Al–N, Si–N and composite Al–Si–N phases in the Al–Si–N film. The Urbach energy increases from 535 to 763 meV with addition of Si, for nanocomposite Al–Si–N film. No significant change in hardness and microstructure were observed up to 400 °C. The Al–Si–N film showed good hydrophobicity on both SS 304 and quartz substrates along with high hardness values. Low wettability and high strength make them a potential candidate for protective optical coatings as they are optically transparent too.
Graphical abstract
通过磁控溅射法在 SS 304、硅和石英基底上沉积了铝-硅-氮纳米复合薄膜。在 AlN 中添加硅使涂层结构从单相涂层转变为纳米复合结构薄膜。它影响了 Al-Si-N 薄膜中的相形成和带间电子转变。XPS 研究表明，在 Al-Si-N 薄膜中形成了 Al-N、Si-N 和复合 Al-Si-N 相。在纳米复合 Al-Si-N 薄膜中，随着硅的加入，Urbach 能量从 535 meV 增加到 763 meV。在 400 °C 以下，硬度和微观结构没有发生明显变化。Al-Si-N 薄膜在 SS 304 和石英基底上都表现出良好的疏水性和高硬度。低润湿性和高强度使它们成为光学保护涂层的潜在候选材料，因为它们也是光学透明的。
{"title":"Hydrophobicity and high-temperature mechanical behaviour of hard and optically transparent nanocomposite Al–Si–N thin films","authors":"Soni, S. K. Sharma, S. K. Mishra","doi":"10.1557/s43578-024-01405-6","DOIUrl":"https://doi.org/10.1557/s43578-024-01405-6","url":null,"abstract":"<p>Nanocomposite Al–Si–N thin films were deposited on SS 304, silicon and quartz substrates through magnetron sputtering. Silicon addition in AlN has transformed the coating structure from a single-phase coating into a nanocomposite structured film. It affected the phase formation and interband electronic transition in the Al–Si–N thin film. XPS study suggests the formation of Al–N, Si–N and composite Al–Si–N phases in the Al–Si–N film. The Urbach energy increases from 535 to 763 meV with addition of Si, for nanocomposite Al–Si–N film. No significant change in hardness and microstructure were observed up to 400 °C. The Al–Si–N film showed good hydrophobicity on both SS 304 and quartz substrates along with high hardness values. Low wettability and high strength make them a potential candidate for protective optical coatings as they are optically transparent too.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"62 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141870619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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