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2012 IEEE 30th VLSI Test Symposium (VTS)最新文献

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Comprehensive online defect diagnosis in on-chip networks 片上网络综合在线缺陷诊断
Pub Date : 2012-04-23 DOI: 10.1109/VTS.2012.6231078
A. Ghofrani, Ritesh Parikh, S. Shamshiri, A. DeOrio, K. Cheng, V. Bertacco
We propose a comprehensive yet low-cost solution for online detection and diagnosis of permanent faults in on-chip networks. Using error syndrome collection and packet/flit-counting techniques, high-resolution defect diagnosis is feasible in both datapath and control logic of the on-chip network without injecting any test traffic or incurring significant performance overhead.
我们提出了一个全面而低成本的解决方案,用于在线检测和诊断片上网络中的永久故障。利用错误综合征收集和包/飞数计数技术,高分辨率缺陷诊断在片上网络的数据路径和控制逻辑中都是可行的,而无需注入任何测试流量或产生显著的性能开销。
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引用次数: 54
Test algorithms for ECC-based memory repair in nanotechnologies 纳米技术中基于ecc的记忆修复测试算法
Pub Date : 2012-04-23 DOI: 10.1109/VTS.2012.6231058
P. Papavramidou, M. Nicolaidis
In modern SoCs embedded memories should be repaired after fabrication to achieve acceptable yield. They should also be protected by ECC against field failures to achieve acceptable reliability. To avoid paying the area and power penalties of both approaches, we can use ECC to fix both fabrication and field failures. However, we show that efficient implementation of this approach may require special diagnosis hardware or new memory test algorithm that exhibit the so-called “single-read double-fault detection” property defined in this paper. We also propose test algorithms satisfying this property.
在现代soc中,嵌入式存储器应在制造后进行修复,以达到可接受的成品率。它们还应该由ECC保护,防止现场故障,以达到可接受的可靠性。为了避免两种方法的面积和功率损失,我们可以使用ECC来修复制造和现场故障。然而,我们表明,这种方法的有效实现可能需要特殊的诊断硬件或新的内存测试算法,这些算法表现出本文定义的所谓的“单读双故障检测”属性。我们还提出了满足这一性质的测试算法。
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引用次数: 10
Tester-based optical and electrical diagnostic system and techniques 基于测试仪的光电诊断系统和技术
Pub Date : 2012-04-23 DOI: 10.1109/VTS.2012.6231104
P. Song, F. Stellari
This paper details tester-based optical and electrical diagnostic system and techniques that aim at diagnosing various types of problems that exist in today's VLSI chips, especially during initial bring-up stage. The versatility of the electrical test creates flexible test controls while optical diagnostic tools, such as emission-based systems, provide a deep understanding of what is going on inside the chip. Tightly integrating both methods produces a powerful diagnostic system and it also opens a door for creating a series of new diagnostic techniques for resolving new families of problems as illustrated in this paper with several examples.
本文详细介绍了基于测试仪的光电诊断系统和技术,旨在诊断当今超大规模集成电路芯片中存在的各种问题,特别是在初始开发阶段。电气测试的多功能性创造了灵活的测试控制,而光学诊断工具(如基于发射的系统)则提供了对芯片内部情况的深入了解。这两种方法的紧密结合产生了一个强大的诊断系统,它也为创造一系列新的诊断技术来解决新的问题家族打开了一扇门,本文用几个例子说明了这一点。
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引用次数: 2
A SMT-based diagnostic test generation method for combinational circuits 基于smt的组合电路诊断测试生成方法
Pub Date : 2012-04-23 DOI: 10.1109/VTS.2012.6231105
S. Prabhu, M. Hsiao, L. Lingappan, V. Gangaram
A diagnostic test pattern generator using a Satisfiability Modulo Theory (SMT) solver is proposed. Rather than targeting a single fault pair at a time, the proposed SMT approach can distinguish multiple fault pairs in a single instance. Several heuristics are proposed to constrain the SMT formula to further reduce the search space, including fault selection, excitation constraint, reduced primary output vector, and cone-of-influence reduction. Experimental results for the ISCAS85 and full-scan versions of ISCAS89 benchmark circuits show that fewer diagnostic vectors are generated compared with conventional diagnostic test generation methods. Up to 73% reduction in the number of vectors generated can be achieved in large circuits.
提出了一种基于可满足模理论(SMT)求解器的诊断测试模式生成器。所提出的SMT方法可以在单个实例中区分多个故障对,而不是一次针对单个故障对。提出了几种启发式方法来约束SMT公式,以进一步缩小搜索空间,包括故障选择、激励约束、简化主输出向量和影响锥约简。ISCAS85和ISCAS89全扫描版基准电路的实验结果表明,与传统的诊断测试生成方法相比,生成的诊断向量更少。在大型电路中,产生的矢量数量最多可减少73%。
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引用次数: 21
Derating based hardware optimizations in soft error tolerant designs 软容错设计中基于降额的硬件优化
Pub Date : 2012-04-23 DOI: 10.1109/VTS.2012.6231067
V. Prasanth, Virendra Singh, R. Parekhji
Ensuring reliable operation over an extended period of time is one of the biggest challenges facing present day electronic systems. The increased vulnerability of the components to atmospheric particle strikes poses a big threat in attaining the reliability required for various mission critical applications. Various soft error mitigation methodologies exist to address this reliability challenge. A general solution to this problem is to arrive at a soft error mitigation methodology with an acceptable implementation overhead and error tolerance level. This implementation overhead can then be reduced by taking advantage of various derating effects like logical derating, electrical derating and timing window derating, and/or making use of application redundancy, e.g. redundancy in firmware/software executing on the so designed robust hardware. In this paper, we analyze the impact of various derating factors and show how they can be profitably employed to reduce the hardware overhead to implement a given level of soft error robustness. This analysis is performed on a set of benchmark circuits using the delayed capture methodology. Experimental results show up to 23% reduction in the hardware overhead when considering individual and combined derating factors.
确保长时间的可靠运行是当今电子系统面临的最大挑战之一。组件对大气粒子撞击的脆弱性增加,对实现各种关键任务应用所需的可靠性构成了巨大威胁。存在各种软错误缓解方法来解决这一可靠性挑战。此问题的一般解决方案是采用具有可接受的实现开销和容错级别的软错误缓解方法。这种实现开销可以通过利用各种降额效果(如逻辑降额、电气降额和定时窗口降额)和/或利用应用程序冗余来减少,例如在如此设计的健壮硬件上执行固件/软件的冗余。在本文中,我们分析了各种降额因素的影响,并展示了如何有效地利用它们来减少硬件开销,以实现给定级别的软错误鲁棒性。该分析是在一组使用延迟捕获方法的基准电路上执行的。实验结果表明,在考虑单个和组合降额因素时,硬件开销减少了23%。
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引用次数: 3
On the parametric failures of SRAM in a 3D-die stack considering tier-to-tier supply cross-talk 考虑层间电源串扰的3d芯片堆叠中SRAM的参数失效
Pub Date : 2012-04-23 DOI: 10.1109/VTS.2012.6231064
W. Yueh, S. Chatterjee, A. Trivedi, S. Mukhopadhyay
This paper analyzes the supply crosstalk between logic cores and SRAMs on separate tiers in a 3D die-stack using a distributed RLC based 3D power grid model. The analysis shows that due to the supply cross-talk power variation in cores modulates the performances and parametric failures in SRAM.
本文采用基于分布式RLC的三维电网模型,分析了三维模堆中各层逻辑核与sram之间的电源串扰。分析表明,由于电源串扰,核内功率的变化会调制SRAM的性能和参数失效。
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引用次数: 3
Built-in-Self Test of transmitter I/Q mismatch using self-mixing envelope detector 内置自检发射机I/Q不匹配使用自混合包络检测器
Pub Date : 2012-04-23 DOI: 10.1109/VTS.2012.6231080
A. Nassery, Srinath Byregowda, S. Ozev, M. Verhelst, M. Slamani
Built-in-Self-Test (BiST) for transmitters is a desirable choice since it eliminates the reliance on expensive instrumentation to do RF signal analysis. Existing on-chip resources, such as power or envelope detectors or small additional circuitry can be used for BiST purposes. However, due to limited bandwidth, measurement of complex specifications, such as IQ imbalance is challenging. Since these parameters are most amenable for digital compensation, their characterization and monitoring are desirable. In this paper, we propose a BiST technique for transmitter IQ imbalance using a self-mixing envelope detector. We first derive an analytical expression for the output signal. Using this expression, we devise test signals to isolate the effects of gain and phase imbalance, DC offsets, and time skews from other parameters of the system. Once isolated, these parameters are calculated easily with a few mathematical operations. Simulations and hardware measurements show that the technique can provide accurate characterization of IQ imbalances.
发射机的内置自检(BiST)是一个理想的选择,因为它消除了对昂贵仪器进行射频信号分析的依赖。现有的片上资源,如电源或包络检测器或小型附加电路可用于BiST目的。然而,由于带宽有限,测量复杂的规格,如IQ不平衡是具有挑战性的。由于这些参数最适合数字补偿,因此它们的表征和监测是可取的。本文提出了一种利用自混合包络检测器检测发射机IQ不平衡的BiST技术。我们首先推导出输出信号的解析表达式。使用这个表达式,我们设计测试信号来隔离增益和相位不平衡、直流偏移和时间偏差对系统其他参数的影响。一旦分离出来,这些参数就很容易通过一些数学运算计算出来。仿真和硬件测试表明,该技术可以准确表征智商失衡。
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引用次数: 8
A Built-In Self-Test scheme for DDR memory output timing test and measurement DDR内存输出时序测试与测量的内置自检方案
Pub Date : 2012-04-23 DOI: 10.1109/VTS.2012.6231072
H. Kim, J. Abraham
This paper presents a Built-In Self-Test (BIST) scheme to measure high speed double data rate (DDR) memory output timing using low cost testers. This technique uses an on-chip pattern generator to generate a time delay between data and data-strobe or clock. The time delay is controlled precisely using a phase interpolator based cycle-by-cycle control method. A novel method for testing the resolution of phase interpolator, which does not need any extra hardware, is also presented. Using the test resolution, a timing pass/fail flag is set and the timing margin is quantified as a multiple of the test clock cycle. Since these test results have high observability, output per-pin timing performance can be diagnosed easily, which is especially good for testing parallel memory interfaces. Moreover, these features make our scheme compatible with low-cost testers and decreases the time-to-market for the chip. The BIST circuit has been implemented using the 0.18-μm CMOS process, and chip measurement results are presented. We obtained a test resolution of 10 ps for testing output timing. Using the fabricated test chip, this paper shows the effects of switching noise, per-pin skews and slew-rate change on output timing variations.
本文提出了一种内置自检(BIST)方案,利用低成本的测试仪测量高速双数据速率(DDR)存储器的输出时序。该技术使用片上模式发生器在数据和数据频闪或时钟之间产生时间延迟。采用基于相位插补器的周期逐周期控制方法精确控制延时。提出了一种不需要额外硬件的相位插补器分辨率测试方法。使用测试分辨率,可以设置定时通过/失败标志,并且定时余量被量化为测试时钟周期的倍数。由于这些测试结果具有很高的可观察性,因此可以很容易地诊断出每引脚输出的时序性能,这对于测试并行存储器接口特别有利。此外,这些特性使我们的方案与低成本测试仪兼容,并缩短了芯片的上市时间。采用0.18 μm CMOS工艺实现了BIST电路,并给出了芯片测量结果。我们为测试输出时序获得了10 ps的测试分辨率。利用自制的测试芯片,研究了开关噪声、单脚偏斜和自旋速率变化对输出时序变化的影响。
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引用次数: 6
A Bayesian-based process parameter estimation using IDDQ current signature 基于贝叶斯的IDDQ电流签名过程参数估计
Pub Date : 2012-04-01 DOI: 10.1109/VTS.2012.6231085
Michihiro Shintani, Takashi Sato
Post-fabrication performance compensation and adaptive delay testing are effective means to improve yield and reliability of LSIs. In these methods, process parameter estimation plays a key role. In this paper, we propose a novel technique for accurate on-chip process parameter estimation. The proposed technique is based on Bayes' theorem, in which on-chip parameters, such as threshold voltages, are estimated by current signatures obtained within a regular IDDQ testing. No additional circuit and additional measurements are required for the purpose of estimation. Numerical experiments demonstrate that the proposed technique can achieve less than 10 mV accuracy in estimating threshold voltages.
后期性能补偿和自适应延迟测试是提高lsi成品率和可靠性的有效手段。在这些方法中,过程参数估计起着关键作用。在本文中,我们提出了一种精确的片上工艺参数估计的新技术。所提出的技术是基于贝叶斯定理,其中芯片上的参数,如阈值电压,是通过在常规IDDQ测试中获得的电流特征来估计的。不需要额外的电路和额外的测量来进行估计。数值实验表明,该方法对阈值电压的估计精度可以达到小于10 mV。
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引用次数: 7
Tutorial 1 教程1
Pub Date : 1900-01-01 DOI: 10.1109/ats.2006.260981
R. Karri, Peilin Song, O. Sinanoglu
This tutorial is most suitable for DFT and Test Engineers, Validation and Verification engineers, Researchers and students in DFT, testing and validation, hardware security.
本教程最适合DFT和测试工程师,验证和验证工程师,DFT研究人员和学生,测试和验证,硬件安全。
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引用次数: 0
期刊
2012 IEEE 30th VLSI Test Symposium (VTS)
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