Pub Date : 2018-09-01DOI: 10.1109/SISPAD.2018.8551661
Swetapadma Sahoo, N. Pandey, D. Saha, S. Ganguly
Understanding the enigmatic mechanism of olfaction from a biomimetic technology perspective would be very useful for electronic nose applications. The inelastic tunneling spectroscopy (IETS) of various odorant-receptor systems are simulated for this purpose. An atomistic simulation framework is presented for the same. Analysis of the results offer an insight into how an actual biomimetic sensor system can be made to detect incoming odorant molecules.
{"title":"Atomistic Design of Quantum Biomimetic Electronic Nose","authors":"Swetapadma Sahoo, N. Pandey, D. Saha, S. Ganguly","doi":"10.1109/SISPAD.2018.8551661","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551661","url":null,"abstract":"Understanding the enigmatic mechanism of olfaction from a biomimetic technology perspective would be very useful for electronic nose applications. The inelastic tunneling spectroscopy (IETS) of various odorant-receptor systems are simulated for this purpose. An atomistic simulation framework is presented for the same. Analysis of the results offer an insight into how an actual biomimetic sensor system can be made to detect incoming odorant molecules.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122419269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/SISPAD.2018.8551670
A. Pham, Seonghoon Jin, Yang Lu, Hong-hyun Park, W. Choi, M. A. Pourghaderi, Jongchol Kim, U. Kwon, D. Kim
Using the in-house simulation tool, self-heating (SH) effects on transport of holes in SiGe pFinFETs are simulated. The coupled system of Boltzmann Transport Equation (BTE) for holes and phonons is solved self-consistently. For transport of holes, the multi subband BTE (MSBTE) is solved for 1D hole gas system, where the subband structure is computed from the 2D $vec{k} cdot vec{p}$ Schrodinger Equation (SE)/3D Poisson equation (PE) solution. For transport of phonons, the BTE for 4 phonon modes (LA, TA, LO, TO) in 3D $vec{k}$–space is solved based on first order spherical harmonic expansion (SHE) method. This study demonstrates the strong dependence of pMOS SH on Ge content. As Ge mole fraction increases above 0.2, alloy scattering hampers the thermal conductivity by more than one order of magnitude. Combined with boundary scattering and smaller band-gap of SiGe, this effect may pose some alarms on next generation pMOS devices.
{"title":"Simulations of Self-Heating Effects in SiGe pFinFETs Based on Self-Consistent Solution of Carrier/Phonon BTE Coupled System","authors":"A. Pham, Seonghoon Jin, Yang Lu, Hong-hyun Park, W. Choi, M. A. Pourghaderi, Jongchol Kim, U. Kwon, D. Kim","doi":"10.1109/SISPAD.2018.8551670","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551670","url":null,"abstract":"Using the in-house simulation tool, self-heating (SH) effects on transport of holes in SiGe pFinFETs are simulated. The coupled system of Boltzmann Transport Equation (BTE) for holes and phonons is solved self-consistently. For transport of holes, the multi subband BTE (MSBTE) is solved for 1D hole gas system, where the subband structure is computed from the 2D $vec{k} cdot vec{p}$ Schrodinger Equation (SE)/3D Poisson equation (PE) solution. For transport of phonons, the BTE for 4 phonon modes (LA, TA, LO, TO) in 3D $vec{k}$–space is solved based on first order spherical harmonic expansion (SHE) method. This study demonstrates the strong dependence of pMOS SH on Ge content. As Ge mole fraction increases above 0.2, alloy scattering hampers the thermal conductivity by more than one order of magnitude. Combined with boundary scattering and smaller band-gap of SiGe, this effect may pose some alarms on next generation pMOS devices.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124460763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/SISPAD.2018.8551751
A. Pilotto, P. Palestri, L. Selmi, M. Antonelli, F. Arfelli, G. Biasiol, G. Cautero, F. Driussi, R. Menk, C. Nichetti, T. Steinhartova
We present an improved Random Path Length algorithm to accurately and efficiently estimate the design space of heterostructure avalanche photodiodes (APDs) in terms of gain, noise and bandwidth without any need of full Monte Carlo transport simulations. The underlying nonlocal model for impact ionization goes beyond the Dead Space concept and it is suited to handle staircase structures composed by a superlattice of III-V compounds as well as thick and thin p-i-n APDs. The model parameters have been calibrated on GaAs and $Al_{x}Ga_{1-x}As$ p-i-n APDs in a previous work. In this work GaAs p-i-n APDs are compared to staircase structures in terms of noise and bandwidth.
{"title":"An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes","authors":"A. Pilotto, P. Palestri, L. Selmi, M. Antonelli, F. Arfelli, G. Biasiol, G. Cautero, F. Driussi, R. Menk, C. Nichetti, T. Steinhartova","doi":"10.1109/SISPAD.2018.8551751","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551751","url":null,"abstract":"We present an improved Random Path Length algorithm to accurately and efficiently estimate the design space of heterostructure avalanche photodiodes (APDs) in terms of gain, noise and bandwidth without any need of full Monte Carlo transport simulations. The underlying nonlocal model for impact ionization goes beyond the Dead Space concept and it is suited to handle staircase structures composed by a superlattice of III-V compounds as well as thick and thin p-i-n APDs. The model parameters have been calibrated on GaAs and $Al_{x}Ga_{1-x}As$ p-i-n APDs in a previous work. In this work GaAs p-i-n APDs are compared to staircase structures in terms of noise and bandwidth.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121156262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/SISPAD.2018.8551629
H. Carrillo-Nuñez, Jaehyun Lee, S. Berrada, C. Medina-Bailón, M. Luisier, A. Asenov, V. Georgiev
In this work, we introduce a novel procedure to compute the direct band-to-band tunneling in semiconductor nano-devices by combining the effective mass approximation, the non-equilibrium Greens function technique, and the two-band Flietner model of the imaginary dispersion. The model is first tested on a Si-InAs nanowire p-type tunnel field-effect transistor (p-TFET), showing great accuracy at much less computational cost when compared with atomistic simulations. Secondly, we report a preliminary quantum transport simulation study of the impact of random discrete dopants on Si-InAs nanowire p-TFETs. An ensemble of 63 InAs-Si nanowire TFETs has been simulated, revealing a strong dopant-induced variability.
{"title":"Efficient Two-Band based Non-Equilibrium Green's Function Scheme for Modeling Tunneling Nano-Devices","authors":"H. Carrillo-Nuñez, Jaehyun Lee, S. Berrada, C. Medina-Bailón, M. Luisier, A. Asenov, V. Georgiev","doi":"10.1109/SISPAD.2018.8551629","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551629","url":null,"abstract":"In this work, we introduce a novel procedure to compute the direct band-to-band tunneling in semiconductor nano-devices by combining the effective mass approximation, the non-equilibrium Greens function technique, and the two-band Flietner model of the imaginary dispersion. The model is first tested on a Si-InAs nanowire p-type tunnel field-effect transistor (p-TFET), showing great accuracy at much less computational cost when compared with atomistic simulations. Secondly, we report a preliminary quantum transport simulation study of the impact of random discrete dopants on Si-InAs nanowire p-TFETs. An ensemble of 63 InAs-Si nanowire TFETs has been simulated, revealing a strong dopant-induced variability.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121193953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/sispad.2018.8551741
{"title":"SISPAD 2018 Preface","authors":"","doi":"10.1109/sispad.2018.8551741","DOIUrl":"https://doi.org/10.1109/sispad.2018.8551741","url":null,"abstract":"","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127486154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/SISPAD.2018.8551746
L. Filipovic, R. L. de Orio
We present an efficient approach to properly treat grain boundaries and material interfaces when modeling electromigration in copper nano-interconnects. Our approach uses several spatial material parameters to identify the locations of the grain boundaries and material interfaces during simulation, thereby not requiring the definition of multiple materials or complex meshes and geometrical interfaces. Using this method even very coarse meshes, with a grid spacing twice the size of the thinnest element (the grain boundary thickness), were able to reasonably reproduce the vacancy concentration of thin copper interconnects, including the microstructure. However, using a grid spacing greater than one half the grain boundary thickness resulted in underestimates of the induced stress.
{"title":"Modeling the Influence of Grains and Material Interfaces on Electromigration","authors":"L. Filipovic, R. L. de Orio","doi":"10.1109/SISPAD.2018.8551746","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551746","url":null,"abstract":"We present an efficient approach to properly treat grain boundaries and material interfaces when modeling electromigration in copper nano-interconnects. Our approach uses several spatial material parameters to identify the locations of the grain boundaries and material interfaces during simulation, thereby not requiring the definition of multiple materials or complex meshes and geometrical interfaces. Using this method even very coarse meshes, with a grid spacing twice the size of the thinnest element (the grain boundary thickness), were able to reasonably reproduce the vacancy concentration of thin copper interconnects, including the microstructure. However, using a grid spacing greater than one half the grain boundary thickness resulted in underestimates of the induced stress.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123774009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/sispad.2018.8551668
{"title":"SISPAD 2018 Sponsors Page","authors":"","doi":"10.1109/sispad.2018.8551668","DOIUrl":"https://doi.org/10.1109/sispad.2018.8551668","url":null,"abstract":"","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131570610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/SISPAD.2018.8551657
Y. Oh, Yumi Park, C. Zechner, I. Martín-Bragado
To simulate the point-defect diffusion in atomic scale, the software platform with a full lattice atomistic kinetic Monte-Carlo (AKMC) capability was developed. In this platform, the theoretical values of migration frequencies and barriers depending on the configuration of the nearest neighbors were automatically calculated by linking the simulator with the density functional theory (DFT) and classical molecular dynamics (CMD) tools. Ge mole fraction dependent diffusivity of a vacancy in SiGe was extracted in this work.
{"title":"Integrated Framework of DFT, Empirical potentials and Full Lattice Atomistic Kinetic Monte-Carlo to Determine Vacancy Diffusion in SiGe","authors":"Y. Oh, Yumi Park, C. Zechner, I. Martín-Bragado","doi":"10.1109/SISPAD.2018.8551657","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551657","url":null,"abstract":"To simulate the point-defect diffusion in atomic scale, the software platform with a full lattice atomistic kinetic Monte-Carlo (AKMC) capability was developed. In this platform, the theoretical values of migration frequencies and barriers depending on the configuration of the nearest neighbors were automatically calculated by linking the simulator with the density functional theory (DFT) and classical molecular dynamics (CMD) tools. Ge mole fraction dependent diffusivity of a vacancy in SiGe was extracted in this work.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120935262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/sispad.2018.8551732
{"title":"SISPAD 2018 Index","authors":"","doi":"10.1109/sispad.2018.8551732","DOIUrl":"https://doi.org/10.1109/sispad.2018.8551732","url":null,"abstract":"","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123129169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/SISPAD.2018.8551734
H. Kosina, M. Kampl
It is commonly accepted that electron-electron scattering (EES) alters the high-energy tail of the energy distribution function [1] [2], and thus plays an important role in the physically-based modeling of hot carrier degradation [3]. One can distinguish between selfconsistent models which assume the actual or an approximate non-equilibrium distribution for the partner electrons, and non-selfconsistent models which assume an equilibrium distribution for the partner electrons. The latter approach is suitable to describe the interaction of channel hot electrons with a reservoir of cold electrons in the drain region. This case is studied in the present work. We briefly discuss the details about the derivation of the single-particle scattering rate and the implementation in a Monte Carlo simulator for both parabolic bands and full-band structures.
{"title":"Effect of Electron-Electron Scattering on the Carrier Distribution in Semiconductor Devices","authors":"H. Kosina, M. Kampl","doi":"10.1109/SISPAD.2018.8551734","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551734","url":null,"abstract":"It is commonly accepted that electron-electron scattering (EES) alters the high-energy tail of the energy distribution function [1] [2], and thus plays an important role in the physically-based modeling of hot carrier degradation [3]. One can distinguish between selfconsistent models which assume the actual or an approximate non-equilibrium distribution for the partner electrons, and non-selfconsistent models which assume an equilibrium distribution for the partner electrons. The latter approach is suitable to describe the interaction of channel hot electrons with a reservoir of cold electrons in the drain region. This case is studied in the present work. We briefly discuss the details about the derivation of the single-particle scattering rate and the implementation in a Monte Carlo simulator for both parabolic bands and full-band structures.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134376322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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