Pub Date : 2019-06-01DOI: 10.23919/SNW.2019.8782938
T. Mizuno, Masaki Yamamoto, T. Aoki, T. Sameshima
We experimentally studied the Si surface orientation dependence of SiC nano-dot formation in a hot-C+-ion implanted bulk-Si substrate (C+-bulk Si), to analyze the effects of Si atom surface density on SiC nano-dot formation in Si and the photoluminescence (PL) property. We successfully demonstrated SiC dot formation even in (110) and (111) C+-bulk Si, too. SiC dot size and density of (110) C+-bulk Si is larger than those of (100) C+-bulk Si. The photoluminescence (PL) properties of C+-bulk Si strongly depend on the Si surface orientation, and the PL intensity is the minimum in (110) C+-bulk Si with lowest Si atom surface density.
{"title":"Si Surface Orientation Dependence of SiC Nano-Dot Formation in Hot-C+ -Ion Implanted Bulk-Si Substrate","authors":"T. Mizuno, Masaki Yamamoto, T. Aoki, T. Sameshima","doi":"10.23919/SNW.2019.8782938","DOIUrl":"https://doi.org/10.23919/SNW.2019.8782938","url":null,"abstract":"We experimentally studied the Si surface orientation dependence of SiC nano-dot formation in a hot-C<sup>+</sup>-ion implanted bulk-Si substrate (C<sup>+</sup>-bulk Si), to analyze the effects of Si atom surface density on SiC nano-dot formation in Si and the photoluminescence (PL) property. We successfully demonstrated SiC dot formation even in (110) and (111) C<sup>+</sup>-bulk Si, too. SiC dot size and density of (110) C<sup>+</sup>-bulk Si is larger than those of (100) C<sup>+</sup>-bulk Si. The photoluminescence (PL) properties of C<sup>+</sup>-bulk Si strongly depend on the Si surface orientation, and the PL intensity is the minimum in (110) C<sup>+</sup>-bulk Si with lowest Si atom surface density.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134027421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/SNW.2019.8782903
B. Govoreanu, S. Kubicek, J. Jussot, B. T. Chan, N. Dumoulin-Stuyck, F. Mohiyaddin, R. Li, G. Simion, T. Ivanov, D. Mocuta, Jae Woo Lee, I. Radu
We discuss the key features of a 300mm integrated Silicon MOS platform to serve as a basis for spin-qubit device exploration. The process yields structures with a pitch of 100nm and below, without bearing the complexity of advanced optical lithography, and retains high flexibility for fast device design adjustment.
{"title":"Moving Spins From Lab to Fab: A Silicon-Based Platform for Quantum Computing Device Technologies","authors":"B. Govoreanu, S. Kubicek, J. Jussot, B. T. Chan, N. Dumoulin-Stuyck, F. Mohiyaddin, R. Li, G. Simion, T. Ivanov, D. Mocuta, Jae Woo Lee, I. Radu","doi":"10.23919/SNW.2019.8782903","DOIUrl":"https://doi.org/10.23919/SNW.2019.8782903","url":null,"abstract":"We discuss the key features of a 300mm integrated Silicon MOS platform to serve as a basis for spin-qubit device exploration. The process yields structures with a pitch of 100nm and below, without bearing the complexity of advanced optical lithography, and retains high flexibility for fast device design adjustment.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134032236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/SNW.2019.8782895
Yu-Hsuan Chen, C. Shih, Hung-Jin Teng, C. Lien
Schottky barrier source/drain produces particular ambipolar conduction and strong hotcarrier generation in CMOS devices. This work presents a new metallic source/drain Ge-based charge-trapping cells for memory applications. Two-dimensional simulations were employed to elucidate the source-side injection programming of Ge-based memory cells and discuss the differences of cell characteristics between the Ge and Si cells.
{"title":"Metallic Source/Drain Ge-Based Charge-Trapping Memory Cells","authors":"Yu-Hsuan Chen, C. Shih, Hung-Jin Teng, C. Lien","doi":"10.23919/SNW.2019.8782895","DOIUrl":"https://doi.org/10.23919/SNW.2019.8782895","url":null,"abstract":"Schottky barrier source/drain produces particular ambipolar conduction and strong hotcarrier generation in CMOS devices. This work presents a new metallic source/drain Ge-based charge-trapping cells for memory applications. Two-dimensional simulations were employed to elucidate the source-side injection programming of Ge-based memory cells and discuss the differences of cell characteristics between the Ge and Si cells.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115479456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/SNW.2019.8782966
M. Simmons
Extremely long electron and nuclear spin coherence times have been demonstrated in isotopically pure Si-28 [1, 2] making silicon a promising semiconductor material for spin-based quantum information. The two-level spin state of single electrons bound to shallow phosphorus donors in silicon in particular provide well defined, reproducible qubits [3]. An important challenge in these systems is the realisation of an architecture, where we can position donors within a crystalline environment with approx. 20-50nm separation, individually address each donor, manipulate the electron spins using ESR techniques and read-out their spin states.
{"title":"Atomic qubits in silicon","authors":"M. Simmons","doi":"10.23919/SNW.2019.8782966","DOIUrl":"https://doi.org/10.23919/SNW.2019.8782966","url":null,"abstract":"Extremely long electron and nuclear spin coherence times have been demonstrated in isotopically pure Si-28 [1, 2] making silicon a promising semiconductor material for spin-based quantum information. The two-level spin state of single electrons bound to shallow phosphorus donors in silicon in particular provide well defined, reproducible qubits [3]. An important challenge in these systems is the realisation of an architecture, where we can position donors within a crystalline environment with approx. 20-50nm separation, individually address each donor, manipulate the electron spins using ESR techniques and read-out their spin states.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128742009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/SNW.2019.8782940
Yu-ning Chen, F. Hou, C. Su, Yung-Chun Wu
This work demonstrates the germanium nanosheet channel with negative capacitance in gate-all-around field-effect-transistor (Ge NS NC-GAAFET) to reduce the subthreshold slope (SS). The Ge NS NC-GAAFET device structure, fabrication, and electrical are analysis were studied. Moreover, the Ge NS NC-FET reveals high driving current, and high Ion/Ioff ratio (>106). The novel Ge NS NC-FET could suit for future low-power integrated circuit applications.
{"title":"Study of Germanium Nanosheet Channel With Negative Capacitance Field-Effect-Transistor","authors":"Yu-ning Chen, F. Hou, C. Su, Yung-Chun Wu","doi":"10.23919/SNW.2019.8782940","DOIUrl":"https://doi.org/10.23919/SNW.2019.8782940","url":null,"abstract":"This work demonstrates the germanium nanosheet channel with negative capacitance in gate-all-around field-effect-transistor (Ge NS NC-GAAFET) to reduce the subthreshold slope (SS). The Ge NS NC-GAAFET device structure, fabrication, and electrical are analysis were studied. Moreover, the Ge NS NC-FET reveals high driving current, and high Ion/Ioff ratio (>106). The novel Ge NS NC-FET could suit for future low-power integrated circuit applications.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130260007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/SNW.2019.8782972
T. Okamoto, Naoki Fujimura, T. Kodera, Y. Kawano
Dopants provide attractive and interesting properties, such as robust quantum states and low-energy physics. Since typical energy depth of dopants corresponds to terahertz (THz) photon energy, optical control of trapped and de-trapped electrons is feasible, paving a pathway for developing new functional electronic/optical devices. Here, we experimentally demonstrate THz-induced de-trapping processes in a dopant-rich silicon quantum dot. Our study offers a deeper understanding of optical properties of dopants, and potentially leads to new functional dopant-based THz devices.
{"title":"Dopant-Induced Terahertz Resonance of a Dopant-Rich Silicon Quantum Dot","authors":"T. Okamoto, Naoki Fujimura, T. Kodera, Y. Kawano","doi":"10.23919/SNW.2019.8782972","DOIUrl":"https://doi.org/10.23919/SNW.2019.8782972","url":null,"abstract":"Dopants provide attractive and interesting properties, such as robust quantum states and low-energy physics. Since typical energy depth of dopants corresponds to terahertz (THz) photon energy, optical control of trapped and de-trapped electrons is feasible, paving a pathway for developing new functional electronic/optical devices. Here, we experimentally demonstrate THz-induced de-trapping processes in a dopant-rich silicon quantum dot. Our study offers a deeper understanding of optical properties of dopants, and potentially leads to new functional dopant-based THz devices.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126052069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/SNW.2019.8782955
T. Maeda, H. Ishii, W. Chang, T. Irisawa, Y. Kurashima, H. Takagi, N. Uchida
We demonstrated high-quality single crystal Germanium (Ge) layer transferred on arbitrary substrates, such as Si, glass, and flexible plastic substrates utilizing direct bonding and epitaxial lift-off (ELO) techniques. Owing to Ge epitaxial growth on GaAs substrates with AlAs release layer, we successfully transferred epitaxial Ge layers on arbitrary substrates with a wide range of thickness from several um to $sim 1$ nm. This layer tranfer approach enables us to realize Ge-based monolithic 3D devices without degradation of Ge crystalline quality.
{"title":"Germanium Layer Transfer with Low Temperature Direct Bonding and Epitaxial Lift-off Technique for Ge-based monolithic 3D integration","authors":"T. Maeda, H. Ishii, W. Chang, T. Irisawa, Y. Kurashima, H. Takagi, N. Uchida","doi":"10.23919/SNW.2019.8782955","DOIUrl":"https://doi.org/10.23919/SNW.2019.8782955","url":null,"abstract":"We demonstrated high-quality single crystal Germanium (Ge) layer transferred on arbitrary substrates, such as Si, glass, and flexible plastic substrates utilizing direct bonding and epitaxial lift-off (ELO) techniques. Owing to Ge epitaxial growth on GaAs substrates with AlAs release layer, we successfully transferred epitaxial Ge layers on arbitrary substrates with a wide range of thickness from several um to $sim 1$ nm. This layer tranfer approach enables us to realize Ge-based monolithic 3D devices without degradation of Ge crystalline quality.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"66 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115717568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/SNW.2019.8782959
Anitharaj Nagarajan, Shusuke Hara, H. Satoh, A. Panchanathan, H. Inokawa
This paper demonstrates the directivity for incoming light of silicon-on-insulator (SOI) photodiode (PD) with gold (Au) grating type surface plasmon (SP) antenna. Light sensitivity is enhanced when the phase matching condition between the diffracted light from the antenna and propagating wave in the SOI is satisfied, and therefore incident angle detection can be realized. Since the PD is compatible with complementary metal-oxide-semiconductor (CMOS) integrated circuit technology, the results may open up a new field of angle sensitive pixels (ASPs) integrated in a chip for applications such as lensless imaging.
{"title":"Directivity of SOI Photodiode with Gold Surface Plasmon Antenna","authors":"Anitharaj Nagarajan, Shusuke Hara, H. Satoh, A. Panchanathan, H. Inokawa","doi":"10.23919/SNW.2019.8782959","DOIUrl":"https://doi.org/10.23919/SNW.2019.8782959","url":null,"abstract":"This paper demonstrates the directivity for incoming light of silicon-on-insulator (SOI) photodiode (PD) with gold (Au) grating type surface plasmon (SP) antenna. Light sensitivity is enhanced when the phase matching condition between the diffracted light from the antenna and propagating wave in the SOI is satisfied, and therefore incident angle detection can be realized. Since the PD is compatible with complementary metal-oxide-semiconductor (CMOS) integrated circuit technology, the results may open up a new field of angle sensitive pixels (ASPs) integrated in a chip for applications such as lensless imaging.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115927048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/SNW.2019.8782929
Hung-Jin Teng, Yu-Hsuan Chen, Nguyen Dang Chien, C. Shih
Based on band-to-band tunneling, tunnel field-effect transistors (TFETs) have demonstrated its small subthreshold swing for energy-efficient applications. This work explores the use of negative capacitance in extremely scaled short-channel TFETs. Against conventional MOSFETs and P-i-N TFETs, the scaled asymmetric junctionless TFETs preserve the short-channel benefits of using negative capacitance ferroelectric to ensure boosted on-current with minimized swing.
{"title":"Negative Capacitance in Short-Channel Tunnel Field-Effect Transistors","authors":"Hung-Jin Teng, Yu-Hsuan Chen, Nguyen Dang Chien, C. Shih","doi":"10.23919/SNW.2019.8782929","DOIUrl":"https://doi.org/10.23919/SNW.2019.8782929","url":null,"abstract":"Based on band-to-band tunneling, tunnel field-effect transistors (TFETs) have demonstrated its small subthreshold swing for energy-efficient applications. This work explores the use of negative capacitance in extremely scaled short-channel TFETs. Against conventional MOSFETs and P-i-N TFETs, the scaled asymmetric junctionless TFETs preserve the short-channel benefits of using negative capacitance ferroelectric to ensure boosted on-current with minimized swing.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125156932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/SNW.2019.8782901
Chien-Chang Li, M. Yeh, Yao-Jen Lee, Yung-Chun Wu
A twin FinFET structure non-volatile memory with high mobility germanium channel (Twin Ge FinFET structure NVM) is demonstrated. An extrapolation of the memory window can achieve 10V of VTH at 21V for 10−3s which is large enough for NVM application. And the memory window can be maintained at 1.5V after 103 P/E cycles. In the future, this novel twin Ge FinFET NVM give a new solution of embedded NVM for next-generation Ge-based FinFET MOSFET integrated circuit.
提出了一种具有高迁移率锗通道的双Ge FinFET结构非易失性存储器(twin Ge FinFET structure NVM)。外推的内存窗口可以实现10V的VTH在21V在10−3s，这是足够大的NVM应用。经过103个P/E循环后，记忆窗口可保持在1.5V。在未来，这种新型的双Ge FinFET NVM为下一代基于Ge的FinFET MOSFET集成电路的嵌入式NVM提供了新的解决方案。
{"title":"Study of Twin Ge FinFET Structure Non-Volatile Memory","authors":"Chien-Chang Li, M. Yeh, Yao-Jen Lee, Yung-Chun Wu","doi":"10.23919/SNW.2019.8782901","DOIUrl":"https://doi.org/10.23919/SNW.2019.8782901","url":null,"abstract":"A twin FinFET structure non-volatile memory with high mobility germanium channel (Twin Ge FinFET structure NVM) is demonstrated. An extrapolation of the memory window can achieve 10V of VTH at 21V for 10−3s which is large enough for NVM application. And the memory window can be maintained at 1.5V after 103 P/E cycles. In the future, this novel twin Ge FinFET NVM give a new solution of embedded NVM for next-generation Ge-based FinFET MOSFET integrated circuit.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126818571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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