Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947402
M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu
Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.
{"title":"Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation","authors":"M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu","doi":"10.23919/LTB-3D.2017.7947402","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947402","url":null,"abstract":"Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"130 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129171927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947410
D. Girou, B. Landgraf, Ramses Guenther, M. Collon, M. Beijersbergen
This paper investigates the bond strength of flat directly-bonded structured monocrystalline silicon X-ray mirrors. We report on the sample manufacturing method and tensile strength testing measurements used to study the influence of annealing.
{"title":"Bond strength of 3D-stacked monocrystalline silicon X-ray mirrors","authors":"D. Girou, B. Landgraf, Ramses Guenther, M. Collon, M. Beijersbergen","doi":"10.23919/LTB-3D.2017.7947410","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947410","url":null,"abstract":"This paper investigates the bond strength of flat directly-bonded structured monocrystalline silicon X-ray mirrors. We report on the sample manufacturing method and tensile strength testing measurements used to study the influence of annealing.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116284834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947459
E. Tochigi, A. Ishihara, S. Kondo, N. Shibata, Y. Ikuhara
Fracture behavior of a grain boundary of alumina was observed by nanoindentation in a transmission electron microscope (TEM). Furthermore, the fracture surfaces were observed at the atomic level by scanning TEM. We discuss the fracture behavior of the grain boundary in terms of its atomic structure.
{"title":"Fracture behavior of the Σ13 grain boundary of α-alumina","authors":"E. Tochigi, A. Ishihara, S. Kondo, N. Shibata, Y. Ikuhara","doi":"10.23919/LTB-3D.2017.7947459","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947459","url":null,"abstract":"Fracture behavior of a grain boundary of alumina was observed by nanoindentation in a transmission electron microscope (TEM). Furthermore, the fracture surfaces were observed at the atomic level by scanning TEM. We discuss the fracture behavior of the grain boundary in terms of its atomic structure.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124528715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947437
H. Oppermann, K. Lang
Fine pitch flip chip applications and small sealing ring structures are demanding for metal interconnects. Thermocompression bonding requires higher temperature. Examples are shown how to reduce bonding temperatures in different applications.
{"title":"Tackling low temperature bonding in fine pitch applications","authors":"H. Oppermann, K. Lang","doi":"10.23919/LTB-3D.2017.7947437","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947437","url":null,"abstract":"Fine pitch flip chip applications and small sealing ring structures are demanding for metal interconnects. Thermocompression bonding requires higher temperature. Examples are shown how to reduce bonding temperatures in different applications.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123829122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947408
Chengkuo Lee
Low temperature eutectic solder as an intermediate layer materials for wafer bonding based MEMS packaging, and thin film encapsulation for wafer level vacuum packaging are reviewed. Wafer level vacuum packaging technologies for MEMS micromirrors, micro-relays and NEMS switches are investigated.
{"title":"Low-temperature solder bonding and thin film encapsulation for wafer level packaged MEMS aiming at harsh environment","authors":"Chengkuo Lee","doi":"10.23919/LTB-3D.2017.7947408","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947408","url":null,"abstract":"Low temperature eutectic solder as an intermediate layer materials for wafer bonding based MEMS packaging, and thin film encapsulation for wafer level vacuum packaging are reviewed. Wafer level vacuum packaging technologies for MEMS micromirrors, micro-relays and NEMS switches are investigated.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117237431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947441
J. Knickerbocker
IBM Research and Micro-System Technology and Solutions Team are enabling next generation computing systems with heterogeneous packaging integration that support both large size / high performance systems and also support miniaturized / low power mobile wireless systems / sensors.
{"title":"Next generation computing systems with heterogeneous packaging integration","authors":"J. Knickerbocker","doi":"10.23919/LTB-3D.2017.7947441","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947441","url":null,"abstract":"IBM Research and Micro-System Technology and Solutions Team are enabling next generation computing systems with heterogeneous packaging integration that support both large size / high performance systems and also support miniaturized / low power mobile wireless systems / sensors.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"2009 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125599354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947415
A. Bosseboeuf, J. Rizzi, P. Coste, C. Bessouet
It is demonstrated that high quality stress-induced birefringence maps in silicon with a high lateral resolution can be obtained by microphotoelasticity in reflection mode at wavelength of 1.31 μm. This technique was applied to inspection of Si-Si wafer bonding defects with variable magnifications. It is shown that defects with an apparent size as small as 20μm in diameter can be observed with a 2μm lateral resolution.
{"title":"Wafer bonding defects inspection by IR microphotoelasticity in reflection mode","authors":"A. Bosseboeuf, J. Rizzi, P. Coste, C. Bessouet","doi":"10.23919/LTB-3D.2017.7947415","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947415","url":null,"abstract":"It is demonstrated that high quality stress-induced birefringence maps in silicon with a high lateral resolution can be obtained by microphotoelasticity in reflection mode at wavelength of 1.31 μm. This technique was applied to inspection of Si-Si wafer bonding defects with variable magnifications. It is shown that defects with an apparent size as small as 20μm in diameter can be observed with a 2μm lateral resolution.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124438720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947446
M. Uomoto, Y. Yamada, T. Hoshi, M. Nada, T. Shimatsu
Room temperature bonding of InGaAs wafers using thin Ge films was studied. Wafers were bonded even with 0.5 nm thick Ge film on each side. Bonded wafers showed strong bonding force after annealing at 340 oC, with no vacancy at the bonded interface in TEM images.
{"title":"Room temperature bonding of InGaAs wafers using thin Ge films","authors":"M. Uomoto, Y. Yamada, T. Hoshi, M. Nada, T. Shimatsu","doi":"10.23919/LTB-3D.2017.7947446","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947446","url":null,"abstract":"Room temperature bonding of InGaAs wafers using thin Ge films was studied. Wafers were bonded even with 0.5 nm thick Ge film on each side. Bonded wafers showed strong bonding force after annealing at 340 oC, with no vacancy at the bonded interface in TEM images.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133999511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947450
M. Fujino, T. Suga
CNT bumps were bonded to Au substrate by surface activated bonding with/without Au sputtering, and the interconnect resistance was compared. As result, the Au sputtered CNT bumps can reduce the interconnect resistance because of enlarging contact area of CNT/Au, and also their conjugation.
{"title":"Interface properties of surface activated bonded CNT bumps and Au substrate","authors":"M. Fujino, T. Suga","doi":"10.23919/LTB-3D.2017.7947450","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947450","url":null,"abstract":"CNT bumps were bonded to Au substrate by surface activated bonding with/without Au sputtering, and the interconnect resistance was compared. As result, the Au sputtered CNT bumps can reduce the interconnect resistance because of enlarging contact area of CNT/Au, and also their conjugation.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126346596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-05-01DOI: 10.23919/LTB-3D.2017.7947427
G. Feix
This paper explains the constraints for the use of very fast switching, wide band gap power semiconductors like silicon carbide (SiC) and gallium nitride (GaN) given in standard wire bonded power modules. Furthermore, a way to make full use of them by using an advanced packaging method is given here.
{"title":"Advanced packaging for wide band gap power semiconductors","authors":"G. Feix","doi":"10.23919/LTB-3D.2017.7947427","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947427","url":null,"abstract":"This paper explains the constraints for the use of very fast switching, wide band gap power semiconductors like silicon carbide (SiC) and gallium nitride (GaN) given in standard wire bonded power modules. Furthermore, a way to make full use of them by using an advanced packaging method is given here.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125732860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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