Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380568
S. Ojha, S. Clements
The requirements for etching low loss mirrors and the dry etching techniques used for realizing these mirrors in photonic devices are reviewed. The effect of carbon dioxide and nitrous oxide additions to CH/sub 4//H/sub 2/ on the etch characteristics of double heterostructure layers is discussed. Vertical mirror profiles were obtained by using a CO/sub 2/ based etch process. Parabolic mirror elements having 1.2 dB loss were etched in an integrated InGaAsP/InP demultiplexer by using a CH/sub 4//H/sub 2//CO/sub 2/ reactive ion etching process. Loading effects were found to be dominant in methane/hydrogen based processes and were found to affect verticality of the quaternary layers.<>
{"title":"Etching of low loss mirrors for photonic ICs","authors":"S. Ojha, S. Clements","doi":"10.1109/ICIPRM.1993.380568","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380568","url":null,"abstract":"The requirements for etching low loss mirrors and the dry etching techniques used for realizing these mirrors in photonic devices are reviewed. The effect of carbon dioxide and nitrous oxide additions to CH/sub 4//H/sub 2/ on the etch characteristics of double heterostructure layers is discussed. Vertical mirror profiles were obtained by using a CO/sub 2/ based etch process. Parabolic mirror elements having 1.2 dB loss were etched in an integrated InGaAsP/InP demultiplexer by using a CH/sub 4//H/sub 2//CO/sub 2/ reactive ion etching process. Loading effects were found to be dominant in methane/hydrogen based processes and were found to affect verticality of the quaternary layers.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132344861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380714
T. Sasaki, M. Kitamura, I. Mito
Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP structures on mask-patterned planar InP substrates was studied. Ridge structures with widths around 2 /spl mu/m were selectively formed on open stripe regions between pairs of mask stripes. For such narrow regions, not only lateral gas phase diffusion but also surface migration contribute to enhanced growth rate compared to growth on unmasked wafers. The surface migration processes of metalorganic species were investigated to obtain flat top surfaces in the ridge structures. Selectively grown InGaAs/InGaAsP MQW structures with flat interfaces were obtained. Composition shifts in selectively grown InGaAs layers provided an additional bandgap energy shift in thickness-modulated InGaAs quantum wells. A shift as large as 200 nm in the photoluminescence peak wavelength was obtained for simultaneously grown multiple quantum well ridge structures while maintaining flat interfaces.<>
{"title":"Selective MOVPE growth and its applications to optical devices","authors":"T. Sasaki, M. Kitamura, I. Mito","doi":"10.1109/ICIPRM.1993.380714","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380714","url":null,"abstract":"Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP structures on mask-patterned planar InP substrates was studied. Ridge structures with widths around 2 /spl mu/m were selectively formed on open stripe regions between pairs of mask stripes. For such narrow regions, not only lateral gas phase diffusion but also surface migration contribute to enhanced growth rate compared to growth on unmasked wafers. The surface migration processes of metalorganic species were investigated to obtain flat top surfaces in the ridge structures. Selectively grown InGaAs/InGaAsP MQW structures with flat interfaces were obtained. Composition shifts in selectively grown InGaAs layers provided an additional bandgap energy shift in thickness-modulated InGaAs quantum wells. A shift as large as 200 nm in the photoluminescence peak wavelength was obtained for simultaneously grown multiple quantum well ridge structures while maintaining flat interfaces.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133492903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380607
J. Zucker
The author discusses some of the device issues that arise when InP-based quantum wells (QWs) are incorporated in guided-wave photonic integrated circuits (PICs). By operating at wavelengths close to the bandgap, enhanced electrooptic effects allow QW waveguide switches and modulators to have sizes that are significantly smaller than those in bulk semiconductors. Compactness is an advantage for monolithic integration with other components, for high-speed operation, and for lowering the unit cost by increasing the number of devices per wafer. However for QW devices to be useful in real optical systems, the negative implications of using near-bandedge phenomena must be confronted. These may include high propagation loss, limited optical bandwidth, and polarization-dependence. For manufacture of QW PICs the number of processing steps and their complexity must be reduced. These issues were examined and it was found that some can be successfully addressed through materials science and bandgap engineering.<>
{"title":"InP-based quantum wells for electro-optic waveguide circuits","authors":"J. Zucker","doi":"10.1109/ICIPRM.1993.380607","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380607","url":null,"abstract":"The author discusses some of the device issues that arise when InP-based quantum wells (QWs) are incorporated in guided-wave photonic integrated circuits (PICs). By operating at wavelengths close to the bandgap, enhanced electrooptic effects allow QW waveguide switches and modulators to have sizes that are significantly smaller than those in bulk semiconductors. Compactness is an advantage for monolithic integration with other components, for high-speed operation, and for lowering the unit cost by increasing the number of devices per wafer. However for QW devices to be useful in real optical systems, the negative implications of using near-bandedge phenomena must be confronted. These may include high propagation loss, limited optical bandwidth, and polarization-dependence. For manufacture of QW PICs the number of processing steps and their complexity must be reduced. These issues were examined and it was found that some can be successfully addressed through materials science and bandgap engineering.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133724537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380571
J. Jacquet, J. Provost, M. Sotom, O. Gautheron, F. Poingt, O. Le Gouezigou, D. Leclerc, C. Labourie, J. Benoit
The authors point out both theoretically and experimentally that photon distribution in two-active section lasers can greatly influence the FM response of such devices. Optical communication systems based on frequency shift keying (FSK) require laser sources featuring high FM efficiency for low spurious amplitude modulation, high bandwidth for high bit rate operation and flat FM response to avoid any degradation induced by long transmitted data sequences. These requirements are not fully met by standard distributed feedback (DFB) lasers, mainly because thermal effects induce a dip with phase inversion in the FM response at a relatively low frequency. To overcome this problem, a new two-segment DFB structure is proposed emitting at 1.5 /spl mu/m with high FM sensitivity and flat FM response up to 1 GHz. The design of this structure relies on the optimum use of the effect of the inhomogeneous photon distribution along the cavity.<>
{"title":"Flat FM response without thermal dip for an optimized two section phase tunable DFB laser","authors":"J. Jacquet, J. Provost, M. Sotom, O. Gautheron, F. Poingt, O. Le Gouezigou, D. Leclerc, C. Labourie, J. Benoit","doi":"10.1109/ICIPRM.1993.380571","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380571","url":null,"abstract":"The authors point out both theoretically and experimentally that photon distribution in two-active section lasers can greatly influence the FM response of such devices. Optical communication systems based on frequency shift keying (FSK) require laser sources featuring high FM efficiency for low spurious amplitude modulation, high bandwidth for high bit rate operation and flat FM response to avoid any degradation induced by long transmitted data sequences. These requirements are not fully met by standard distributed feedback (DFB) lasers, mainly because thermal effects induce a dip with phase inversion in the FM response at a relatively low frequency. To overcome this problem, a new two-segment DFB structure is proposed emitting at 1.5 /spl mu/m with high FM sensitivity and flat FM response up to 1 GHz. The design of this structure relies on the optimum use of the effect of the inhomogeneous photon distribution along the cavity.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121992915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380555
H. Dinges, H. Burkhard, R. Losch, H. Nickel, W. Schlapp
The refractive indices of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/Ga/sub 0.26/As/InP were measured for the first time in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry. The results on InP and GaAs are in good agreement with the measurements in the literature. The interface layer due to the exchange of phosphorus and arsenic atoms during the desorption procedure of the molecular beam epitaxy growth exists and was also found by high resolution X-ray diffraction.<>
{"title":"Determination of the refractive indices and interfaces of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/ layers on InP in the wavelength range from 280 to 1900 nm","authors":"H. Dinges, H. Burkhard, R. Losch, H. Nickel, W. Schlapp","doi":"10.1109/ICIPRM.1993.380555","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380555","url":null,"abstract":"The refractive indices of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/Ga/sub 0.26/As/InP were measured for the first time in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry. The results on InP and GaAs are in good agreement with the measurements in the literature. The interface layer due to the exchange of phosphorus and arsenic atoms during the desorption procedure of the molecular beam epitaxy growth exists and was also found by high resolution X-ray diffraction.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121104197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380589
C. Huang, Tsuen-Lin Lee, H. Lin
Wide band gap materials, InAlAs and InAlGaAs, were used in the collector of double heterojunction bipolar transistors (DHBTs). Base-collector designs and their effects on the DC characteristics of the DHBTs were investigated. It is found that in the InAlAs/InGaAs/InAlAs DHBT, the unusual large conduction band discontinuity results in a two-dimensional electron gas (2DEG) stored in base-collector abrupt junction. This 2DEG will push the heterojunction spike up and cause a reach-through effect with a InGaAs space layer inserted between the base-collector junction. Junction grading seems to be the only method to remove the effect. For the InAlAs/InGaAs/InAlGaAs DHBT, the smaller the conduction band discontinuity, the less significant is the 2DEG effect. When the discontinuity is smaller than 0.27 eV, the knee-shape and reach-through characteristics disappear.<>
{"title":"DC characteristics of In/sub 0.52/Al/sub 0.48/As/ In/sub 0.53/(Al/sub x/Ga/sub 1-x/)/sub 0.47/As NPN double heterojunction bipolar transistors","authors":"C. Huang, Tsuen-Lin Lee, H. Lin","doi":"10.1109/ICIPRM.1993.380589","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380589","url":null,"abstract":"Wide band gap materials, InAlAs and InAlGaAs, were used in the collector of double heterojunction bipolar transistors (DHBTs). Base-collector designs and their effects on the DC characteristics of the DHBTs were investigated. It is found that in the InAlAs/InGaAs/InAlAs DHBT, the unusual large conduction band discontinuity results in a two-dimensional electron gas (2DEG) stored in base-collector abrupt junction. This 2DEG will push the heterojunction spike up and cause a reach-through effect with a InGaAs space layer inserted between the base-collector junction. Junction grading seems to be the only method to remove the effect. For the InAlAs/InGaAs/InAlGaAs DHBT, the smaller the conduction band discontinuity, the less significant is the 2DEG effect. When the discontinuity is smaller than 0.27 eV, the knee-shape and reach-through characteristics disappear.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116972809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380694
T. S. Rao, C. Lacelle, S. Rolfe, L. Allard, S. Charbonneau, A. P. Roth, T. Steiner, M. Thewalt
In the past few years, chemical beam epitaxy (CBE) has succeeded in producing high purity InP with residual carrier concentrations in the low 10/sup 14/ cm/sup -3/ range and liquid nitrogen temperature mobilities much higher than 10/sup 5/ cm/sup 2//Vs. The authors present the results of a study where they have combined electrical, chemical, and optical measurements to identify the residual impurities in InP layers grown with different growth parameters. It is shown that S and Si are the two major residual donor impurities in InP layers grown by CBE and that they originate from the gas sources. Arsenic contamination of InP layers is a common problem in gas source systems, particularly when a single cracker cell is used for both As and P sources. However this contamination can be greatly reduced with a thorough baking prior to InP growth. The concentration of acceptors is negligible and too low to allow the identification of the residual acceptor impurities. Under optimized growth conditions, InP layers with residual carrier concentrations less than 10/sup 14/ cm/sup -3/ can be routinely grown with 77 K mobilities larger than 2 /spl times/ 10/sup 5/ cm/sup 2//Vs.<>
{"title":"Residual impurities in high purity InP grown by chemical beam epitaxy","authors":"T. S. Rao, C. Lacelle, S. Rolfe, L. Allard, S. Charbonneau, A. P. Roth, T. Steiner, M. Thewalt","doi":"10.1109/ICIPRM.1993.380694","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380694","url":null,"abstract":"In the past few years, chemical beam epitaxy (CBE) has succeeded in producing high purity InP with residual carrier concentrations in the low 10/sup 14/ cm/sup -3/ range and liquid nitrogen temperature mobilities much higher than 10/sup 5/ cm/sup 2//Vs. The authors present the results of a study where they have combined electrical, chemical, and optical measurements to identify the residual impurities in InP layers grown with different growth parameters. It is shown that S and Si are the two major residual donor impurities in InP layers grown by CBE and that they originate from the gas sources. Arsenic contamination of InP layers is a common problem in gas source systems, particularly when a single cracker cell is used for both As and P sources. However this contamination can be greatly reduced with a thorough baking prior to InP growth. The concentration of acceptors is negligible and too low to allow the identification of the residual acceptor impurities. Under optimized growth conditions, InP layers with residual carrier concentrations less than 10/sup 14/ cm/sup -3/ can be routinely grown with 77 K mobilities larger than 2 /spl times/ 10/sup 5/ cm/sup 2//Vs.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124095096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380567
I. Adesida, S. Agarwala, C. Caneau, R. Bhat
A selective reactive ion etching (SRIE) process for the etching of InGaAs on InAlAs in HBr plasmas has been developed. A selectivity value as high as 160 was achieved at a bias voltage of -100 V. To date, this is the highest selectivity ever reported for this material system. The etch-stop mechanism is inferred from Auger electron spectroscopy to be due the formation of involatile aluminum oxide. The SRIE process reported should be for the fabrication of InAlAs/InGaAs/InP heterostructure field effect transistors (HFETs).<>
{"title":"Highly selective etching of InGaAs on InAlAs in HBr plasma","authors":"I. Adesida, S. Agarwala, C. Caneau, R. Bhat","doi":"10.1109/ICIPRM.1993.380567","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380567","url":null,"abstract":"A selective reactive ion etching (SRIE) process for the etching of InGaAs on InAlAs in HBr plasmas has been developed. A selectivity value as high as 160 was achieved at a bias voltage of -100 V. To date, this is the highest selectivity ever reported for this material system. The etch-stop mechanism is inferred from Auger electron spectroscopy to be due the formation of involatile aluminum oxide. The SRIE process reported should be for the fabrication of InAlAs/InGaAs/InP heterostructure field effect transistors (HFETs).<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123941337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380614
G. Augustine, B. Keyes, N. Jokerst, A. Rohatgi, R. Ahrenkiel
Time-resolved photoluminescence data are reported on InP thin films transferred on glass substrates. The films were kept below 1.1 /spl mu/m in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples showed evidence of Shockley-Read-Hall recombination. For higher electron densities, the lifetime is found to be controlled by the radiative recombination process. An estimate of the radiative recombination coefficient, B, was made in terms of the photon recycling factor.<>
{"title":"Time-resolved photoluminescence studies on transferred thin film InP epilayers","authors":"G. Augustine, B. Keyes, N. Jokerst, A. Rohatgi, R. Ahrenkiel","doi":"10.1109/ICIPRM.1993.380614","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380614","url":null,"abstract":"Time-resolved photoluminescence data are reported on InP thin films transferred on glass substrates. The films were kept below 1.1 /spl mu/m in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples showed evidence of Shockley-Read-Hall recombination. For higher electron densities, the lifetime is found to be controlled by the radiative recombination process. An estimate of the radiative recombination coefficient, B, was made in terms of the photon recycling factor.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123761506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380620
M. Faur, M. Ghalla-Goradia, C. Vargas-Aburto
The authors report on the use of electrochemical (EC) techniques for characterization and step-by-step optimization of n/sup +/p and p/sup +/n InP structures fabricated by thermal diffusion, for making high efficiency radiation resistant InP solar cells. The emitter layer and the junction proximity of the base are characterized as functions of: (a) various surface preparation procedures; (b) diffusion cap; (c) diffusion source; and (d) diffusion conditions consisting of diffusion temperature and time, amount of source material and added phosphorus, and temperature difference between the source and substrates. The EC characterization of the emitter layer provides: (a) thickness of front damaged layers; (b) density of surface and deep dislocations, and precipitates; (c) net majority carrier concentration depth profiles; and (d) surface and deep trap levels. The EC characterization was done both before and after irradiating the structure with high energy electrons and protons.<>
{"title":"Design of high quality thermally diffused p/sup +/n and n/sup +/p InP structures with the help of electrochemical studies","authors":"M. Faur, M. Ghalla-Goradia, C. Vargas-Aburto","doi":"10.1109/ICIPRM.1993.380620","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380620","url":null,"abstract":"The authors report on the use of electrochemical (EC) techniques for characterization and step-by-step optimization of n/sup +/p and p/sup +/n InP structures fabricated by thermal diffusion, for making high efficiency radiation resistant InP solar cells. The emitter layer and the junction proximity of the base are characterized as functions of: (a) various surface preparation procedures; (b) diffusion cap; (c) diffusion source; and (d) diffusion conditions consisting of diffusion temperature and time, amount of source material and added phosphorus, and temperature difference between the source and substrates. The EC characterization of the emitter layer provides: (a) thickness of front damaged layers; (b) density of surface and deep dislocations, and precipitates; (c) net majority carrier concentration depth profiles; and (d) surface and deep trap levels. The EC characterization was done both before and after irradiating the structure with high energy electrons and protons.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128760849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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