Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380663
W. Kruppa, J. B. Boos
The effects of trapping mechanisms on the transconductance and output resistance of InAlAs/InGaAs/InP high-electron mobility transistors (HEMTs) with a double-recessed gate structure are reported. The results at nominal bias conditions and room temperature indicate an increase of transconductance with frequency of about 15% occurring primarily between 100 Hz and 1 MHz and an almost constant output resistance. The output resistance, however, has a complex dispersion behavior in the vicinity of the kink effect. The detailed characteristics of the dispersion involve several transition frequencies and associated time constants with different activation energies and having electric field dependence. Transient response measurements with both gate and drain inputs give results consistent with the sinusoidal response. The activation energies of the most prominent trapping effects were determined by measuring the time constants or transition frequencies as functions of temperature.<>
{"title":"Sinusoidal and transient response of traps in double-recessed InAlAs/InGaAs/InP HEMTs","authors":"W. Kruppa, J. B. Boos","doi":"10.1109/ICIPRM.1993.380663","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380663","url":null,"abstract":"The effects of trapping mechanisms on the transconductance and output resistance of InAlAs/InGaAs/InP high-electron mobility transistors (HEMTs) with a double-recessed gate structure are reported. The results at nominal bias conditions and room temperature indicate an increase of transconductance with frequency of about 15% occurring primarily between 100 Hz and 1 MHz and an almost constant output resistance. The output resistance, however, has a complex dispersion behavior in the vicinity of the kink effect. The detailed characteristics of the dispersion involve several transition frequencies and associated time constants with different activation energies and having electric field dependence. Transient response measurements with both gate and drain inputs give results consistent with the sinusoidal response. The activation energies of the most prominent trapping effects were determined by measuring the time constants or transition frequencies as functions of temperature.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114472736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380589
C. Huang, Tsuen-Lin Lee, H. Lin
Wide band gap materials, InAlAs and InAlGaAs, were used in the collector of double heterojunction bipolar transistors (DHBTs). Base-collector designs and their effects on the DC characteristics of the DHBTs were investigated. It is found that in the InAlAs/InGaAs/InAlAs DHBT, the unusual large conduction band discontinuity results in a two-dimensional electron gas (2DEG) stored in base-collector abrupt junction. This 2DEG will push the heterojunction spike up and cause a reach-through effect with a InGaAs space layer inserted between the base-collector junction. Junction grading seems to be the only method to remove the effect. For the InAlAs/InGaAs/InAlGaAs DHBT, the smaller the conduction band discontinuity, the less significant is the 2DEG effect. When the discontinuity is smaller than 0.27 eV, the knee-shape and reach-through characteristics disappear.<>
{"title":"DC characteristics of In/sub 0.52/Al/sub 0.48/As/ In/sub 0.53/(Al/sub x/Ga/sub 1-x/)/sub 0.47/As NPN double heterojunction bipolar transistors","authors":"C. Huang, Tsuen-Lin Lee, H. Lin","doi":"10.1109/ICIPRM.1993.380589","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380589","url":null,"abstract":"Wide band gap materials, InAlAs and InAlGaAs, were used in the collector of double heterojunction bipolar transistors (DHBTs). Base-collector designs and their effects on the DC characteristics of the DHBTs were investigated. It is found that in the InAlAs/InGaAs/InAlAs DHBT, the unusual large conduction band discontinuity results in a two-dimensional electron gas (2DEG) stored in base-collector abrupt junction. This 2DEG will push the heterojunction spike up and cause a reach-through effect with a InGaAs space layer inserted between the base-collector junction. Junction grading seems to be the only method to remove the effect. For the InAlAs/InGaAs/InAlGaAs DHBT, the smaller the conduction band discontinuity, the less significant is the 2DEG effect. When the discontinuity is smaller than 0.27 eV, the knee-shape and reach-through characteristics disappear.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116972809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380626
J. Pelouard, N. Matine, F. Pardo, D. Sachelarie, J. Benchimol
A new HBT design for reduction of parasitic effects has been developed to demonstrate the ability of ballistic and quasi-ballistic electron transport into the base to improve HBT dynamic behavior. To reduce both the transit time and the charging time of the base-collector junction electrons are collected by a Schottky contact. As a result the transistor must be collector-up. A fully self-aligned process has been developed for collector-up HBTs. This small cross-type HBT exhibits an attractive potential for fast dynamic behavior. Static behavior has been characterized on test structures grown by chemical beam epitaxy. It has been shown that current injected by the emitter-base junction flows mainly at junction perimeter. Also, it has been demonstrated that the extrinsic base must be over-doped by ion implantation to have small enough access resistance to the base for good dynamic behavior. Static current gains up to 50 have measured for the shortest junction perimeters.<>
{"title":"Fully self-aligned InP/InGaAs heterojunction bipolar transistors grown by chemical beam epitaxy with a Schottky collector","authors":"J. Pelouard, N. Matine, F. Pardo, D. Sachelarie, J. Benchimol","doi":"10.1109/ICIPRM.1993.380626","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380626","url":null,"abstract":"A new HBT design for reduction of parasitic effects has been developed to demonstrate the ability of ballistic and quasi-ballistic electron transport into the base to improve HBT dynamic behavior. To reduce both the transit time and the charging time of the base-collector junction electrons are collected by a Schottky contact. As a result the transistor must be collector-up. A fully self-aligned process has been developed for collector-up HBTs. This small cross-type HBT exhibits an attractive potential for fast dynamic behavior. Static behavior has been characterized on test structures grown by chemical beam epitaxy. It has been shown that current injected by the emitter-base junction flows mainly at junction perimeter. Also, it has been demonstrated that the extrinsic base must be over-doped by ion implantation to have small enough access resistance to the base for good dynamic behavior. Static current gains up to 50 have measured for the shortest junction perimeters.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"313 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124451207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380661
J. Epler, H. P. Schweizer, T. Jung
In situ elastic light scattering was used to characterize, in real-time, the topography of InP-InGaAsP and GaAs epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Phenomena such as the evolution of the atomic terrace and interface included roughness were observed. Ex situ atomic force microscopy images provide corroboration of the in situ data.<>
{"title":"In situ characterization of MOCVD growth","authors":"J. Epler, H. P. Schweizer, T. Jung","doi":"10.1109/ICIPRM.1993.380661","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380661","url":null,"abstract":"In situ elastic light scattering was used to characterize, in real-time, the topography of InP-InGaAsP and GaAs epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Phenomena such as the evolution of the atomic terrace and interface included roughness were observed. Ex situ atomic force microscopy images provide corroboration of the in situ data.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122577661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380567
I. Adesida, S. Agarwala, C. Caneau, R. Bhat
A selective reactive ion etching (SRIE) process for the etching of InGaAs on InAlAs in HBr plasmas has been developed. A selectivity value as high as 160 was achieved at a bias voltage of -100 V. To date, this is the highest selectivity ever reported for this material system. The etch-stop mechanism is inferred from Auger electron spectroscopy to be due the formation of involatile aluminum oxide. The SRIE process reported should be for the fabrication of InAlAs/InGaAs/InP heterostructure field effect transistors (HFETs).<>
{"title":"Highly selective etching of InGaAs on InAlAs in HBr plasma","authors":"I. Adesida, S. Agarwala, C. Caneau, R. Bhat","doi":"10.1109/ICIPRM.1993.380567","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380567","url":null,"abstract":"A selective reactive ion etching (SRIE) process for the etching of InGaAs on InAlAs in HBr plasmas has been developed. A selectivity value as high as 160 was achieved at a bias voltage of -100 V. To date, this is the highest selectivity ever reported for this material system. The etch-stop mechanism is inferred from Auger electron spectroscopy to be due the formation of involatile aluminum oxide. The SRIE process reported should be for the fabrication of InAlAs/InGaAs/InP heterostructure field effect transistors (HFETs).<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123941337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380593
M. Shokrani, V. Kapoor
InGaAs insulated-gate FETs (IGFETs) with 1.2 /spl mu/m gate lengths have been designed, fabricated and characterized as switch devices for microwave control applications in switched and phase shifter circuits. The devices employed a plasma deposited silicon dioxide gate insulator and had multiple airbridged source regions. The control voltage was applied to the gate through a on chip 5 current k/spl Omega/ mesa resistor to RF isolate the device from the gate supply. The effect of increased gate leakage current on device performance due to the leakage path created by the gate bias resistor is discussed. Three different gate widths of 300 /spl mu/m, 600/spl mu/m and 1200/spl mu/m were investigated to examine the tradeoff between low on state and high off state capacitance. The DC current-voltage (I-V) characteristics as well as small signal scattering parameter (S-parameter) measurement results from 2-20 GHz are presented. The equivalent circuit models of the InGaAs switch FET fitted to the experimentally measured S-parameters are also given.<>
{"title":"InGaAs switch transistors for microwave control applications","authors":"M. Shokrani, V. Kapoor","doi":"10.1109/ICIPRM.1993.380593","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380593","url":null,"abstract":"InGaAs insulated-gate FETs (IGFETs) with 1.2 /spl mu/m gate lengths have been designed, fabricated and characterized as switch devices for microwave control applications in switched and phase shifter circuits. The devices employed a plasma deposited silicon dioxide gate insulator and had multiple airbridged source regions. The control voltage was applied to the gate through a on chip 5 current k/spl Omega/ mesa resistor to RF isolate the device from the gate supply. The effect of increased gate leakage current on device performance due to the leakage path created by the gate bias resistor is discussed. Three different gate widths of 300 /spl mu/m, 600/spl mu/m and 1200/spl mu/m were investigated to examine the tradeoff between low on state and high off state capacitance. The DC current-voltage (I-V) characteristics as well as small signal scattering parameter (S-parameter) measurement results from 2-20 GHz are presented. The equivalent circuit models of the InGaAs switch FET fitted to the experimentally measured S-parameters are also given.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126211644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380560
R. Montgomery, J. Jensen
The authors describe the current state of the art results and highlight design tradeoffs encountered for applications in analog, digital, and microwave circuits using InP based heterojunction bipolar transistors (HBTs). InP based HBTs are not merely devices for application in optoelectronic integrated circuits (OEICs). While the OEIC efforts continue, interest is increasing in very high performance systems for analog, digital, and power microwave applications. In the last year, significant improvements in device performance have been accomplished by grading the emitter-base junction and modifying the collector to enhance the breakdown performance. Issues of reliability are now getting attention and the technology is being applied more widely.<>
{"title":"Design trade-offs in InP based HBT ICs","authors":"R. Montgomery, J. Jensen","doi":"10.1109/ICIPRM.1993.380560","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380560","url":null,"abstract":"The authors describe the current state of the art results and highlight design tradeoffs encountered for applications in analog, digital, and microwave circuits using InP based heterojunction bipolar transistors (HBTs). InP based HBTs are not merely devices for application in optoelectronic integrated circuits (OEICs). While the OEIC efforts continue, interest is increasing in very high performance systems for analog, digital, and power microwave applications. In the last year, significant improvements in device performance have been accomplished by grading the emitter-base junction and modifying the collector to enhance the breakdown performance. Issues of reliability are now getting attention and the technology is being applied more widely.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126502470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380634
I. Pollentier, C. Brys, P. Debie, R. Coppoolse, L. Martens, J. Vandewege, P. van Daele, P. Demeester
Epitaxial lift-off (ELO) is a technique by which epitaxially grown layers are lifted off their growth substrate and subsequently reattached to a new one. The preprocessing approach where ELO devices and circuits on the host are fabricated before transplantation offers the advantages that (a) fully optimized devices provided by a foundry service can be combined, (b) the devices can be tested prior to transplantation, and (c) the final result is a monolithic integration. The authors present results on the transplantation of foundry MESFETs to InP, and compare their behavior and the extracted parameters for a nonlinear MESFET-model before and after transfer.<>
{"title":"Epitaxially lifted-off GaAs MESFETs on InP for optoelectronic integration","authors":"I. Pollentier, C. Brys, P. Debie, R. Coppoolse, L. Martens, J. Vandewege, P. van Daele, P. Demeester","doi":"10.1109/ICIPRM.1993.380634","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380634","url":null,"abstract":"Epitaxial lift-off (ELO) is a technique by which epitaxially grown layers are lifted off their growth substrate and subsequently reattached to a new one. The preprocessing approach where ELO devices and circuits on the host are fabricated before transplantation offers the advantages that (a) fully optimized devices provided by a foundry service can be combined, (b) the devices can be tested prior to transplantation, and (c) the final result is a monolithic integration. The authors present results on the transplantation of foundry MESFETs to InP, and compare their behavior and the extracted parameters for a nonlinear MESFET-model before and after transfer.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129314320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380570
H. Nakajima, C. Kazmierski, M. Gilleron, J. Landreau
A laser structure having an active layer composed of several thin bulk layers is described. Buried ridge structure type Fabry-Perot lasers fabricated by using this structure exhibit a low internal loss of 15.6 cm/sup -1/ and a RC-limited modulation bandwidth as wide as 10 GHz. A reduced polarization sensitivity was demonstrated by a test optical amplifier.<>
{"title":"Low loss nearly square-section multi-bulk-layer lasers for polarization insensitive optical amplifiers","authors":"H. Nakajima, C. Kazmierski, M. Gilleron, J. Landreau","doi":"10.1109/ICIPRM.1993.380570","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380570","url":null,"abstract":"A laser structure having an active layer composed of several thin bulk layers is described. Buried ridge structure type Fabry-Perot lasers fabricated by using this structure exhibit a low internal loss of 15.6 cm/sup -1/ and a RC-limited modulation bandwidth as wide as 10 GHz. A reduced polarization sensitivity was demonstrated by a test optical amplifier.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129564277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380614
G. Augustine, B. Keyes, N. Jokerst, A. Rohatgi, R. Ahrenkiel
Time-resolved photoluminescence data are reported on InP thin films transferred on glass substrates. The films were kept below 1.1 /spl mu/m in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples showed evidence of Shockley-Read-Hall recombination. For higher electron densities, the lifetime is found to be controlled by the radiative recombination process. An estimate of the radiative recombination coefficient, B, was made in terms of the photon recycling factor.<>
{"title":"Time-resolved photoluminescence studies on transferred thin film InP epilayers","authors":"G. Augustine, B. Keyes, N. Jokerst, A. Rohatgi, R. Ahrenkiel","doi":"10.1109/ICIPRM.1993.380614","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380614","url":null,"abstract":"Time-resolved photoluminescence data are reported on InP thin films transferred on glass substrates. The films were kept below 1.1 /spl mu/m in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples showed evidence of Shockley-Read-Hall recombination. For higher electron densities, the lifetime is found to be controlled by the radiative recombination process. An estimate of the radiative recombination coefficient, B, was made in terms of the photon recycling factor.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123761506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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