Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380570
H. Nakajima, C. Kazmierski, M. Gilleron, J. Landreau
A laser structure having an active layer composed of several thin bulk layers is described. Buried ridge structure type Fabry-Perot lasers fabricated by using this structure exhibit a low internal loss of 15.6 cm/sup -1/ and a RC-limited modulation bandwidth as wide as 10 GHz. A reduced polarization sensitivity was demonstrated by a test optical amplifier.<>
{"title":"Low loss nearly square-section multi-bulk-layer lasers for polarization insensitive optical amplifiers","authors":"H. Nakajima, C. Kazmierski, M. Gilleron, J. Landreau","doi":"10.1109/ICIPRM.1993.380570","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380570","url":null,"abstract":"A laser structure having an active layer composed of several thin bulk layers is described. Buried ridge structure type Fabry-Perot lasers fabricated by using this structure exhibit a low internal loss of 15.6 cm/sup -1/ and a RC-limited modulation bandwidth as wide as 10 GHz. A reduced polarization sensitivity was demonstrated by a test optical amplifier.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129564277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380692
M. di Forte-Poisson, C. Brylinski, C. Herbeaux, Y. Androussi, A. Lefebvre, J. di Persio, E. Vassilakis, F. Herrbach, C. Carriere
The authors report on low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth and the properties of GaInAs/InP double heterostructures grown on InP substrate. Some critical points for the LP-MOCVD process are the quality of the sources and appropriate growth conditions. These critical parameters were investigated together with the effect of different switching sequences from InP to GaInAs on the crystallographic and electrical properties of the direct InP/GaInAs interface. The relationship between crystallographic and electrical properties of GaInAs/InP interfaces is demonstrated. In addition a good correlation between such properties and performance of GaInAs/InP PiN photodiodes was observed.<>
{"title":"Correlation between interfacial defects and electrical properties of LP-MOCVD GaInAs/InP heterostructures, application to high performance 1.67 /spl mu/m GaInAs/InP PiN photodiodes","authors":"M. di Forte-Poisson, C. Brylinski, C. Herbeaux, Y. Androussi, A. Lefebvre, J. di Persio, E. Vassilakis, F. Herrbach, C. Carriere","doi":"10.1109/ICIPRM.1993.380692","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380692","url":null,"abstract":"The authors report on low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth and the properties of GaInAs/InP double heterostructures grown on InP substrate. Some critical points for the LP-MOCVD process are the quality of the sources and appropriate growth conditions. These critical parameters were investigated together with the effect of different switching sequences from InP to GaInAs on the crystallographic and electrical properties of the direct InP/GaInAs interface. The relationship between crystallographic and electrical properties of GaInAs/InP interfaces is demonstrated. In addition a good correlation between such properties and performance of GaInAs/InP PiN photodiodes was observed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125511654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380686
M. Garcia Perez, T. Benyattou, A. Tabata, G. Guillot, M. Sacilotti, P. Abraham, Y. Monteil, J. Tardy
The authors report low temperature photoluminescence studies of single (InP/InAlAs) and double (InP/InAlAs/InP) heterostructures. The samples were grown by atmospheric pressure metal organic vapor phase epitaxy at 650/spl deg/C. On the single heterostructure, the well known emission was observed at 1.2 eV due to InAlAs on InP type II direct interface. On the double heterostructure, a new emission at 1.3 eV has been observed. The influence of the excitation power and the electric field was investigated on this transition. Optical measurement results are presented carried out on a bevelled sample. The results show that this emission is related to an interface recombination and that both interfaces are not equivalent.<>
{"title":"Optical characterization of InAlAs/InP single and double heterostructures","authors":"M. Garcia Perez, T. Benyattou, A. Tabata, G. Guillot, M. Sacilotti, P. Abraham, Y. Monteil, J. Tardy","doi":"10.1109/ICIPRM.1993.380686","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380686","url":null,"abstract":"The authors report low temperature photoluminescence studies of single (InP/InAlAs) and double (InP/InAlAs/InP) heterostructures. The samples were grown by atmospheric pressure metal organic vapor phase epitaxy at 650/spl deg/C. On the single heterostructure, the well known emission was observed at 1.2 eV due to InAlAs on InP type II direct interface. On the double heterostructure, a new emission at 1.3 eV has been observed. The influence of the excitation power and the electric field was investigated on this transition. Optical measurement results are presented carried out on a bevelled sample. The results show that this emission is related to an interface recombination and that both interfaces are not equivalent.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128303376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380593
M. Shokrani, V. Kapoor
InGaAs insulated-gate FETs (IGFETs) with 1.2 /spl mu/m gate lengths have been designed, fabricated and characterized as switch devices for microwave control applications in switched and phase shifter circuits. The devices employed a plasma deposited silicon dioxide gate insulator and had multiple airbridged source regions. The control voltage was applied to the gate through a on chip 5 current k/spl Omega/ mesa resistor to RF isolate the device from the gate supply. The effect of increased gate leakage current on device performance due to the leakage path created by the gate bias resistor is discussed. Three different gate widths of 300 /spl mu/m, 600/spl mu/m and 1200/spl mu/m were investigated to examine the tradeoff between low on state and high off state capacitance. The DC current-voltage (I-V) characteristics as well as small signal scattering parameter (S-parameter) measurement results from 2-20 GHz are presented. The equivalent circuit models of the InGaAs switch FET fitted to the experimentally measured S-parameters are also given.<>
{"title":"InGaAs switch transistors for microwave control applications","authors":"M. Shokrani, V. Kapoor","doi":"10.1109/ICIPRM.1993.380593","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380593","url":null,"abstract":"InGaAs insulated-gate FETs (IGFETs) with 1.2 /spl mu/m gate lengths have been designed, fabricated and characterized as switch devices for microwave control applications in switched and phase shifter circuits. The devices employed a plasma deposited silicon dioxide gate insulator and had multiple airbridged source regions. The control voltage was applied to the gate through a on chip 5 current k/spl Omega/ mesa resistor to RF isolate the device from the gate supply. The effect of increased gate leakage current on device performance due to the leakage path created by the gate bias resistor is discussed. Three different gate widths of 300 /spl mu/m, 600/spl mu/m and 1200/spl mu/m were investigated to examine the tradeoff between low on state and high off state capacitance. The DC current-voltage (I-V) characteristics as well as small signal scattering parameter (S-parameter) measurement results from 2-20 GHz are presented. The equivalent circuit models of the InGaAs switch FET fitted to the experimentally measured S-parameters are also given.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126211644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380587
A. Fathimulla, D. Gutierrez
The authors present the properties of SiO/sub 2/ and Si/sub 3/N/sub 4/ films for various deposition parameters and the performance of an InP metal-insulated semiconductor FET (MISFET) with a SiO/sub 2/ gate dielectric. The experiments were performed in a Plasma Therm SLR 770 ECR system with an Astex microwave source. Both Si and undoped InP substrates were used to study the quality of the films. The InP MISFET fabricated with the ECR-deposited SiO/sub 2/ exhibited DC characteristics and drain current drift as good or better than those of MISFETs fabricated using other techniques for depositing gate dielectrics. The results indicate that the ECR-deposited films are excellent candidates for gate dielectrics and passivation of III-V devices.<>
{"title":"ECR-plasma-deposited gate dielectrics for InP MISFETs","authors":"A. Fathimulla, D. Gutierrez","doi":"10.1109/ICIPRM.1993.380587","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380587","url":null,"abstract":"The authors present the properties of SiO/sub 2/ and Si/sub 3/N/sub 4/ films for various deposition parameters and the performance of an InP metal-insulated semiconductor FET (MISFET) with a SiO/sub 2/ gate dielectric. The experiments were performed in a Plasma Therm SLR 770 ECR system with an Astex microwave source. Both Si and undoped InP substrates were used to study the quality of the films. The InP MISFET fabricated with the ECR-deposited SiO/sub 2/ exhibited DC characteristics and drain current drift as good or better than those of MISFETs fabricated using other techniques for depositing gate dielectrics. The results indicate that the ECR-deposited films are excellent candidates for gate dielectrics and passivation of III-V devices.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127221630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380561
A. Iketani, M. Ohkubo, S. Namiki, T. Ijichi, T. Kikuta
InGaAs/GaAs/InGaAsP continuously graded index separate confinement heterostructure (GRIN-SCH) lasers were fabricated by metal organic chemical vapor deposition (MOCVD) for the first time. Transmission electron microscope observation and secondary ion mass spectroscopy measurement show that the continuously graded InGaAsP layers were grown excellently. A very high characteristic temperature of 307K was obtained on the ridge waveguide lasers. Very stable and narrow far field patterns were obtained. The coupling to a single mode fiber was performed with high coupling efficiency of 60%, and output power as high as 78mW was achieved.<>
{"title":"First fabrication of continuously graded InGaAsP on GaAs for 0.98/spl mu/m lasers","authors":"A. Iketani, M. Ohkubo, S. Namiki, T. Ijichi, T. Kikuta","doi":"10.1109/ICIPRM.1993.380561","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380561","url":null,"abstract":"InGaAs/GaAs/InGaAsP continuously graded index separate confinement heterostructure (GRIN-SCH) lasers were fabricated by metal organic chemical vapor deposition (MOCVD) for the first time. Transmission electron microscope observation and secondary ion mass spectroscopy measurement show that the continuously graded InGaAsP layers were grown excellently. A very high characteristic temperature of 307K was obtained on the ridge waveguide lasers. Very stable and narrow far field patterns were obtained. The coupling to a single mode fiber was performed with high coupling efficiency of 60%, and output power as high as 78mW was achieved.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114160335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380663
W. Kruppa, J. B. Boos
The effects of trapping mechanisms on the transconductance and output resistance of InAlAs/InGaAs/InP high-electron mobility transistors (HEMTs) with a double-recessed gate structure are reported. The results at nominal bias conditions and room temperature indicate an increase of transconductance with frequency of about 15% occurring primarily between 100 Hz and 1 MHz and an almost constant output resistance. The output resistance, however, has a complex dispersion behavior in the vicinity of the kink effect. The detailed characteristics of the dispersion involve several transition frequencies and associated time constants with different activation energies and having electric field dependence. Transient response measurements with both gate and drain inputs give results consistent with the sinusoidal response. The activation energies of the most prominent trapping effects were determined by measuring the time constants or transition frequencies as functions of temperature.<>
{"title":"Sinusoidal and transient response of traps in double-recessed InAlAs/InGaAs/InP HEMTs","authors":"W. Kruppa, J. B. Boos","doi":"10.1109/ICIPRM.1993.380663","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380663","url":null,"abstract":"The effects of trapping mechanisms on the transconductance and output resistance of InAlAs/InGaAs/InP high-electron mobility transistors (HEMTs) with a double-recessed gate structure are reported. The results at nominal bias conditions and room temperature indicate an increase of transconductance with frequency of about 15% occurring primarily between 100 Hz and 1 MHz and an almost constant output resistance. The output resistance, however, has a complex dispersion behavior in the vicinity of the kink effect. The detailed characteristics of the dispersion involve several transition frequencies and associated time constants with different activation energies and having electric field dependence. Transient response measurements with both gate and drain inputs give results consistent with the sinusoidal response. The activation energies of the most prominent trapping effects were determined by measuring the time constants or transition frequencies as functions of temperature.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114472736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380661
J. Epler, H. P. Schweizer, T. Jung
In situ elastic light scattering was used to characterize, in real-time, the topography of InP-InGaAsP and GaAs epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Phenomena such as the evolution of the atomic terrace and interface included roughness were observed. Ex situ atomic force microscopy images provide corroboration of the in situ data.<>
{"title":"In situ characterization of MOCVD growth","authors":"J. Epler, H. P. Schweizer, T. Jung","doi":"10.1109/ICIPRM.1993.380661","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380661","url":null,"abstract":"In situ elastic light scattering was used to characterize, in real-time, the topography of InP-InGaAsP and GaAs epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Phenomena such as the evolution of the atomic terrace and interface included roughness were observed. Ex situ atomic force microscopy images provide corroboration of the in situ data.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122577661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380634
I. Pollentier, C. Brys, P. Debie, R. Coppoolse, L. Martens, J. Vandewege, P. van Daele, P. Demeester
Epitaxial lift-off (ELO) is a technique by which epitaxially grown layers are lifted off their growth substrate and subsequently reattached to a new one. The preprocessing approach where ELO devices and circuits on the host are fabricated before transplantation offers the advantages that (a) fully optimized devices provided by a foundry service can be combined, (b) the devices can be tested prior to transplantation, and (c) the final result is a monolithic integration. The authors present results on the transplantation of foundry MESFETs to InP, and compare their behavior and the extracted parameters for a nonlinear MESFET-model before and after transfer.<>
{"title":"Epitaxially lifted-off GaAs MESFETs on InP for optoelectronic integration","authors":"I. Pollentier, C. Brys, P. Debie, R. Coppoolse, L. Martens, J. Vandewege, P. van Daele, P. Demeester","doi":"10.1109/ICIPRM.1993.380634","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380634","url":null,"abstract":"Epitaxial lift-off (ELO) is a technique by which epitaxially grown layers are lifted off their growth substrate and subsequently reattached to a new one. The preprocessing approach where ELO devices and circuits on the host are fabricated before transplantation offers the advantages that (a) fully optimized devices provided by a foundry service can be combined, (b) the devices can be tested prior to transplantation, and (c) the final result is a monolithic integration. The authors present results on the transplantation of foundry MESFETs to InP, and compare their behavior and the extracted parameters for a nonlinear MESFET-model before and after transfer.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129314320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380560
R. Montgomery, J. Jensen
The authors describe the current state of the art results and highlight design tradeoffs encountered for applications in analog, digital, and microwave circuits using InP based heterojunction bipolar transistors (HBTs). InP based HBTs are not merely devices for application in optoelectronic integrated circuits (OEICs). While the OEIC efforts continue, interest is increasing in very high performance systems for analog, digital, and power microwave applications. In the last year, significant improvements in device performance have been accomplished by grading the emitter-base junction and modifying the collector to enhance the breakdown performance. Issues of reliability are now getting attention and the technology is being applied more widely.<>
{"title":"Design trade-offs in InP based HBT ICs","authors":"R. Montgomery, J. Jensen","doi":"10.1109/ICIPRM.1993.380560","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380560","url":null,"abstract":"The authors describe the current state of the art results and highlight design tradeoffs encountered for applications in analog, digital, and microwave circuits using InP based heterojunction bipolar transistors (HBTs). InP based HBTs are not merely devices for application in optoelectronic integrated circuits (OEICs). While the OEIC efforts continue, interest is increasing in very high performance systems for analog, digital, and power microwave applications. In the last year, significant improvements in device performance have been accomplished by grading the emitter-base junction and modifying the collector to enhance the breakdown performance. Issues of reliability are now getting attention and the technology is being applied more widely.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126502470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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