Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380571
J. Jacquet, J. Provost, M. Sotom, O. Gautheron, F. Poingt, O. Le Gouezigou, D. Leclerc, C. Labourie, J. Benoit
The authors point out both theoretically and experimentally that photon distribution in two-active section lasers can greatly influence the FM response of such devices. Optical communication systems based on frequency shift keying (FSK) require laser sources featuring high FM efficiency for low spurious amplitude modulation, high bandwidth for high bit rate operation and flat FM response to avoid any degradation induced by long transmitted data sequences. These requirements are not fully met by standard distributed feedback (DFB) lasers, mainly because thermal effects induce a dip with phase inversion in the FM response at a relatively low frequency. To overcome this problem, a new two-segment DFB structure is proposed emitting at 1.5 /spl mu/m with high FM sensitivity and flat FM response up to 1 GHz. The design of this structure relies on the optimum use of the effect of the inhomogeneous photon distribution along the cavity.<>
{"title":"Flat FM response without thermal dip for an optimized two section phase tunable DFB laser","authors":"J. Jacquet, J. Provost, M. Sotom, O. Gautheron, F. Poingt, O. Le Gouezigou, D. Leclerc, C. Labourie, J. Benoit","doi":"10.1109/ICIPRM.1993.380571","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380571","url":null,"abstract":"The authors point out both theoretically and experimentally that photon distribution in two-active section lasers can greatly influence the FM response of such devices. Optical communication systems based on frequency shift keying (FSK) require laser sources featuring high FM efficiency for low spurious amplitude modulation, high bandwidth for high bit rate operation and flat FM response to avoid any degradation induced by long transmitted data sequences. These requirements are not fully met by standard distributed feedback (DFB) lasers, mainly because thermal effects induce a dip with phase inversion in the FM response at a relatively low frequency. To overcome this problem, a new two-segment DFB structure is proposed emitting at 1.5 /spl mu/m with high FM sensitivity and flat FM response up to 1 GHz. The design of this structure relies on the optimum use of the effect of the inhomogeneous photon distribution along the cavity.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121992915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380555
H. Dinges, H. Burkhard, R. Losch, H. Nickel, W. Schlapp
The refractive indices of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/Ga/sub 0.26/As/InP were measured for the first time in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry. The results on InP and GaAs are in good agreement with the measurements in the literature. The interface layer due to the exchange of phosphorus and arsenic atoms during the desorption procedure of the molecular beam epitaxy growth exists and was also found by high resolution X-ray diffraction.<>
{"title":"Determination of the refractive indices and interfaces of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/ layers on InP in the wavelength range from 280 to 1900 nm","authors":"H. Dinges, H. Burkhard, R. Losch, H. Nickel, W. Schlapp","doi":"10.1109/ICIPRM.1993.380555","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380555","url":null,"abstract":"The refractive indices of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/Ga/sub 0.26/As/InP were measured for the first time in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry. The results on InP and GaAs are in good agreement with the measurements in the literature. The interface layer due to the exchange of phosphorus and arsenic atoms during the desorption procedure of the molecular beam epitaxy growth exists and was also found by high resolution X-ray diffraction.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121104197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380692
M. di Forte-Poisson, C. Brylinski, C. Herbeaux, Y. Androussi, A. Lefebvre, J. di Persio, E. Vassilakis, F. Herrbach, C. Carriere
The authors report on low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth and the properties of GaInAs/InP double heterostructures grown on InP substrate. Some critical points for the LP-MOCVD process are the quality of the sources and appropriate growth conditions. These critical parameters were investigated together with the effect of different switching sequences from InP to GaInAs on the crystallographic and electrical properties of the direct InP/GaInAs interface. The relationship between crystallographic and electrical properties of GaInAs/InP interfaces is demonstrated. In addition a good correlation between such properties and performance of GaInAs/InP PiN photodiodes was observed.<>
{"title":"Correlation between interfacial defects and electrical properties of LP-MOCVD GaInAs/InP heterostructures, application to high performance 1.67 /spl mu/m GaInAs/InP PiN photodiodes","authors":"M. di Forte-Poisson, C. Brylinski, C. Herbeaux, Y. Androussi, A. Lefebvre, J. di Persio, E. Vassilakis, F. Herrbach, C. Carriere","doi":"10.1109/ICIPRM.1993.380692","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380692","url":null,"abstract":"The authors report on low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth and the properties of GaInAs/InP double heterostructures grown on InP substrate. Some critical points for the LP-MOCVD process are the quality of the sources and appropriate growth conditions. These critical parameters were investigated together with the effect of different switching sequences from InP to GaInAs on the crystallographic and electrical properties of the direct InP/GaInAs interface. The relationship between crystallographic and electrical properties of GaInAs/InP interfaces is demonstrated. In addition a good correlation between such properties and performance of GaInAs/InP PiN photodiodes was observed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125511654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380694
T. S. Rao, C. Lacelle, S. Rolfe, L. Allard, S. Charbonneau, A. P. Roth, T. Steiner, M. Thewalt
In the past few years, chemical beam epitaxy (CBE) has succeeded in producing high purity InP with residual carrier concentrations in the low 10/sup 14/ cm/sup -3/ range and liquid nitrogen temperature mobilities much higher than 10/sup 5/ cm/sup 2//Vs. The authors present the results of a study where they have combined electrical, chemical, and optical measurements to identify the residual impurities in InP layers grown with different growth parameters. It is shown that S and Si are the two major residual donor impurities in InP layers grown by CBE and that they originate from the gas sources. Arsenic contamination of InP layers is a common problem in gas source systems, particularly when a single cracker cell is used for both As and P sources. However this contamination can be greatly reduced with a thorough baking prior to InP growth. The concentration of acceptors is negligible and too low to allow the identification of the residual acceptor impurities. Under optimized growth conditions, InP layers with residual carrier concentrations less than 10/sup 14/ cm/sup -3/ can be routinely grown with 77 K mobilities larger than 2 /spl times/ 10/sup 5/ cm/sup 2//Vs.<>
{"title":"Residual impurities in high purity InP grown by chemical beam epitaxy","authors":"T. S. Rao, C. Lacelle, S. Rolfe, L. Allard, S. Charbonneau, A. P. Roth, T. Steiner, M. Thewalt","doi":"10.1109/ICIPRM.1993.380694","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380694","url":null,"abstract":"In the past few years, chemical beam epitaxy (CBE) has succeeded in producing high purity InP with residual carrier concentrations in the low 10/sup 14/ cm/sup -3/ range and liquid nitrogen temperature mobilities much higher than 10/sup 5/ cm/sup 2//Vs. The authors present the results of a study where they have combined electrical, chemical, and optical measurements to identify the residual impurities in InP layers grown with different growth parameters. It is shown that S and Si are the two major residual donor impurities in InP layers grown by CBE and that they originate from the gas sources. Arsenic contamination of InP layers is a common problem in gas source systems, particularly when a single cracker cell is used for both As and P sources. However this contamination can be greatly reduced with a thorough baking prior to InP growth. The concentration of acceptors is negligible and too low to allow the identification of the residual acceptor impurities. Under optimized growth conditions, InP layers with residual carrier concentrations less than 10/sup 14/ cm/sup -3/ can be routinely grown with 77 K mobilities larger than 2 /spl times/ 10/sup 5/ cm/sup 2//Vs.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124095096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380620
M. Faur, M. Ghalla-Goradia, C. Vargas-Aburto
The authors report on the use of electrochemical (EC) techniques for characterization and step-by-step optimization of n/sup +/p and p/sup +/n InP structures fabricated by thermal diffusion, for making high efficiency radiation resistant InP solar cells. The emitter layer and the junction proximity of the base are characterized as functions of: (a) various surface preparation procedures; (b) diffusion cap; (c) diffusion source; and (d) diffusion conditions consisting of diffusion temperature and time, amount of source material and added phosphorus, and temperature difference between the source and substrates. The EC characterization of the emitter layer provides: (a) thickness of front damaged layers; (b) density of surface and deep dislocations, and precipitates; (c) net majority carrier concentration depth profiles; and (d) surface and deep trap levels. The EC characterization was done both before and after irradiating the structure with high energy electrons and protons.<>
{"title":"Design of high quality thermally diffused p/sup +/n and n/sup +/p InP structures with the help of electrochemical studies","authors":"M. Faur, M. Ghalla-Goradia, C. Vargas-Aburto","doi":"10.1109/ICIPRM.1993.380620","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380620","url":null,"abstract":"The authors report on the use of electrochemical (EC) techniques for characterization and step-by-step optimization of n/sup +/p and p/sup +/n InP structures fabricated by thermal diffusion, for making high efficiency radiation resistant InP solar cells. The emitter layer and the junction proximity of the base are characterized as functions of: (a) various surface preparation procedures; (b) diffusion cap; (c) diffusion source; and (d) diffusion conditions consisting of diffusion temperature and time, amount of source material and added phosphorus, and temperature difference between the source and substrates. The EC characterization of the emitter layer provides: (a) thickness of front damaged layers; (b) density of surface and deep dislocations, and precipitates; (c) net majority carrier concentration depth profiles; and (d) surface and deep trap levels. The EC characterization was done both before and after irradiating the structure with high energy electrons and protons.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128760849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380658
B.X. Yang, H. Hasegawa
The authors discuss the crystalline quality and electrical properties of InP grown by the migration-enhanced epitaxy (MEE) mode (Y. Horikoshi et al., 1986). InP layers were characterized by reflection high-energy electron diffraction, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, photoluminescence, and Hall measurements. Electrical properties which are strongly dependent on growth temperature are explained in terms of the impurity conduction through the residual stoichiometry-related donor defects. A conventional molecular beam epitaxy (MBE) growth was also made for comparison.<>
作者讨论了通过迁移增强外延(MEE)模式生长的InP的晶体质量和电学性能(Y. Horikoshi et al.， 1986)。采用反射高能电子衍射、x射线衍射、x射线光电子能谱、俄歇电子能谱、光致发光和霍尔测量对InP层进行了表征。电学性质是强烈依赖于生长温度解释的杂质通过残余化学计量相关的供体缺陷传导。为了进行比较，还进行了常规分子束外延(MBE)生长。
{"title":"Properties of InP grown by migration-enhanced epitaxy using polycrystalline InP as phosphorus source","authors":"B.X. Yang, H. Hasegawa","doi":"10.1109/ICIPRM.1993.380658","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380658","url":null,"abstract":"The authors discuss the crystalline quality and electrical properties of InP grown by the migration-enhanced epitaxy (MEE) mode (Y. Horikoshi et al., 1986). InP layers were characterized by reflection high-energy electron diffraction, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, photoluminescence, and Hall measurements. Electrical properties which are strongly dependent on growth temperature are explained in terms of the impurity conduction through the residual stoichiometry-related donor defects. A conventional molecular beam epitaxy (MBE) growth was also made for comparison.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129151902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380607
J. Zucker
The author discusses some of the device issues that arise when InP-based quantum wells (QWs) are incorporated in guided-wave photonic integrated circuits (PICs). By operating at wavelengths close to the bandgap, enhanced electrooptic effects allow QW waveguide switches and modulators to have sizes that are significantly smaller than those in bulk semiconductors. Compactness is an advantage for monolithic integration with other components, for high-speed operation, and for lowering the unit cost by increasing the number of devices per wafer. However for QW devices to be useful in real optical systems, the negative implications of using near-bandedge phenomena must be confronted. These may include high propagation loss, limited optical bandwidth, and polarization-dependence. For manufacture of QW PICs the number of processing steps and their complexity must be reduced. These issues were examined and it was found that some can be successfully addressed through materials science and bandgap engineering.<>
{"title":"InP-based quantum wells for electro-optic waveguide circuits","authors":"J. Zucker","doi":"10.1109/ICIPRM.1993.380607","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380607","url":null,"abstract":"The author discusses some of the device issues that arise when InP-based quantum wells (QWs) are incorporated in guided-wave photonic integrated circuits (PICs). By operating at wavelengths close to the bandgap, enhanced electrooptic effects allow QW waveguide switches and modulators to have sizes that are significantly smaller than those in bulk semiconductors. Compactness is an advantage for monolithic integration with other components, for high-speed operation, and for lowering the unit cost by increasing the number of devices per wafer. However for QW devices to be useful in real optical systems, the negative implications of using near-bandedge phenomena must be confronted. These may include high propagation loss, limited optical bandwidth, and polarization-dependence. For manufacture of QW PICs the number of processing steps and their complexity must be reduced. These issues were examined and it was found that some can be successfully addressed through materials science and bandgap engineering.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133724537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380587
A. Fathimulla, D. Gutierrez
The authors present the properties of SiO/sub 2/ and Si/sub 3/N/sub 4/ films for various deposition parameters and the performance of an InP metal-insulated semiconductor FET (MISFET) with a SiO/sub 2/ gate dielectric. The experiments were performed in a Plasma Therm SLR 770 ECR system with an Astex microwave source. Both Si and undoped InP substrates were used to study the quality of the films. The InP MISFET fabricated with the ECR-deposited SiO/sub 2/ exhibited DC characteristics and drain current drift as good or better than those of MISFETs fabricated using other techniques for depositing gate dielectrics. The results indicate that the ECR-deposited films are excellent candidates for gate dielectrics and passivation of III-V devices.<>
{"title":"ECR-plasma-deposited gate dielectrics for InP MISFETs","authors":"A. Fathimulla, D. Gutierrez","doi":"10.1109/ICIPRM.1993.380587","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380587","url":null,"abstract":"The authors present the properties of SiO/sub 2/ and Si/sub 3/N/sub 4/ films for various deposition parameters and the performance of an InP metal-insulated semiconductor FET (MISFET) with a SiO/sub 2/ gate dielectric. The experiments were performed in a Plasma Therm SLR 770 ECR system with an Astex microwave source. Both Si and undoped InP substrates were used to study the quality of the films. The InP MISFET fabricated with the ECR-deposited SiO/sub 2/ exhibited DC characteristics and drain current drift as good or better than those of MISFETs fabricated using other techniques for depositing gate dielectrics. The results indicate that the ECR-deposited films are excellent candidates for gate dielectrics and passivation of III-V devices.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127221630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380540
Y. Hamisch, R. Steffen, A. Forchel, P. Rontgen
The bandgap difference between the ordered and the disordered phase of GaInP of about 100 meV was used for a lateral potential modulation in GaInP/AlGaInP heterostructures by means of masked ion implantation and rapid thermal annealing. The authors found a very sharp transition from the ordered to the disordered state of the material both as a function of the annealing temperature and the implantation dose. The photoluminescence of the buried quantum wires fabricated with mask widths down to 25 nm shows a high quantum efficiency and a maximum blue shift of the wire luminescence of 35 meV.<>
{"title":"High efficiency buried quantum wires defined by a local order-disorder transition in Ga/sub 0.5/In/sub 0.5/P/ (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P","authors":"Y. Hamisch, R. Steffen, A. Forchel, P. Rontgen","doi":"10.1109/ICIPRM.1993.380540","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380540","url":null,"abstract":"The bandgap difference between the ordered and the disordered phase of GaInP of about 100 meV was used for a lateral potential modulation in GaInP/AlGaInP heterostructures by means of masked ion implantation and rapid thermal annealing. The authors found a very sharp transition from the ordered to the disordered state of the material both as a function of the annealing temperature and the implantation dose. The photoluminescence of the buried quantum wires fabricated with mask widths down to 25 nm shows a high quantum efficiency and a maximum blue shift of the wire luminescence of 35 meV.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"252 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131431371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380686
M. Garcia Perez, T. Benyattou, A. Tabata, G. Guillot, M. Sacilotti, P. Abraham, Y. Monteil, J. Tardy
The authors report low temperature photoluminescence studies of single (InP/InAlAs) and double (InP/InAlAs/InP) heterostructures. The samples were grown by atmospheric pressure metal organic vapor phase epitaxy at 650/spl deg/C. On the single heterostructure, the well known emission was observed at 1.2 eV due to InAlAs on InP type II direct interface. On the double heterostructure, a new emission at 1.3 eV has been observed. The influence of the excitation power and the electric field was investigated on this transition. Optical measurement results are presented carried out on a bevelled sample. The results show that this emission is related to an interface recombination and that both interfaces are not equivalent.<>
{"title":"Optical characterization of InAlAs/InP single and double heterostructures","authors":"M. Garcia Perez, T. Benyattou, A. Tabata, G. Guillot, M. Sacilotti, P. Abraham, Y. Monteil, J. Tardy","doi":"10.1109/ICIPRM.1993.380686","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380686","url":null,"abstract":"The authors report low temperature photoluminescence studies of single (InP/InAlAs) and double (InP/InAlAs/InP) heterostructures. The samples were grown by atmospheric pressure metal organic vapor phase epitaxy at 650/spl deg/C. On the single heterostructure, the well known emission was observed at 1.2 eV due to InAlAs on InP type II direct interface. On the double heterostructure, a new emission at 1.3 eV has been observed. The influence of the excitation power and the electric field was investigated on this transition. Optical measurement results are presented carried out on a bevelled sample. The results show that this emission is related to an interface recombination and that both interfaces are not equivalent.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128303376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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