Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380671
M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, M. Goradia, I. Weinberg, N. Fatemi
By drastically reducing the defect densities of p/sup +/n (Cd,S) InP diffused structures the authors have succeeded in fabricating p/sup +/n InP solar cells with measured AM0, 25/spl deg/C V/sub /spl prop// values exceeding 880 mV, without anti-reflection (AR) coating. Experiment-based projected maximum achievable AM0, 25/spl deg/C efficiency of these cells is 21.3%. Preliminary investigation of the performance parameters of p/sup +/n (Cd,S) InP structures and solar cells after irradiation with 10/sup 13/ cm/sup -2/ 3MeV protons indicate higher radiation tolerance of this configuration as compared to n/sup +/p InP configuration due to its better annealing properties.<>
{"title":"Experiment-based projected high efficiency thermally diffused p/sup +/n (Cd,S) InP solar cells for space applications","authors":"M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, M. Goradia, I. Weinberg, N. Fatemi","doi":"10.1109/ICIPRM.1993.380671","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380671","url":null,"abstract":"By drastically reducing the defect densities of p/sup +/n (Cd,S) InP diffused structures the authors have succeeded in fabricating p/sup +/n InP solar cells with measured AM0, 25/spl deg/C V/sub /spl prop// values exceeding 880 mV, without anti-reflection (AR) coating. Experiment-based projected maximum achievable AM0, 25/spl deg/C efficiency of these cells is 21.3%. Preliminary investigation of the performance parameters of p/sup +/n (Cd,S) InP structures and solar cells after irradiation with 10/sup 13/ cm/sup -2/ 3MeV protons indicate higher radiation tolerance of this configuration as compared to n/sup +/p InP configuration due to its better annealing properties.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"22 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125780682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380557
W. Stanchina, R. Metzger, M. W. Pierce, J. Jensen, L. McCray, R. Wong-Quen, F. Williams
The authors demonstrated the feasibility of a new technique for the monolithic fabrication of complementary heterostructure bipolar transistors (HBTs). The process led to coplanar npn and pnp HBTs, the first in the AlInAs/GaInAs material system, which were comparable with the state of the art in HBTs. These devices exhibited unity current gain cutoff frequencies (f/sub T/) up to 99 GHz and 14 GHz for the npn and pnp transistors, respectively. The fabrication scheme allows each of these device types to have individually designed epitaxial structures that are grown in a single molecular beam epitaxy run. Results show that the devices will be capable of tight packing densities for IC applications.<>
{"title":"Monolithic fabrication of NPN and PNP AlInAs/GaInAs HBTs","authors":"W. Stanchina, R. Metzger, M. W. Pierce, J. Jensen, L. McCray, R. Wong-Quen, F. Williams","doi":"10.1109/ICIPRM.1993.380557","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380557","url":null,"abstract":"The authors demonstrated the feasibility of a new technique for the monolithic fabrication of complementary heterostructure bipolar transistors (HBTs). The process led to coplanar npn and pnp HBTs, the first in the AlInAs/GaInAs material system, which were comparable with the state of the art in HBTs. These devices exhibited unity current gain cutoff frequencies (f/sub T/) up to 99 GHz and 14 GHz for the npn and pnp transistors, respectively. The fabrication scheme allows each of these device types to have individually designed epitaxial structures that are grown in a single molecular beam epitaxy run. Results show that the devices will be capable of tight packing densities for IC applications.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123811614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380700
H. Scheffler, N. Baber, A. Dadgar, T. Wolf, D. Bimberg
The hole capture cross section /spl sigma//sub p/ of the deep Ti/sup 3+//Ti/sup 4+/ donor level in InP has been measured as a function of temperature. Two different capacitance spectroscopy techniques have been used, namely deep level transient spectroscopy and an isothermal capacitance measurement method for capture measurements at high and low temperatures, respectively. /spl sigma//sub p/ has been found to increase with temperature from 2.8 /spl times/ 10/sup -23/ cm/sup 2/ at 100 K to 2.7 /spl times/ 10/sup -22/ at 300 K, in agreement with a multiphonon emission process. The capture barrier for hole capture amounts to (30/spl plusmn/5) meV.<>
{"title":"Hole capture cross section of the deep Ti donor level in InP","authors":"H. Scheffler, N. Baber, A. Dadgar, T. Wolf, D. Bimberg","doi":"10.1109/ICIPRM.1993.380700","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380700","url":null,"abstract":"The hole capture cross section /spl sigma//sub p/ of the deep Ti/sup 3+//Ti/sup 4+/ donor level in InP has been measured as a function of temperature. Two different capacitance spectroscopy techniques have been used, namely deep level transient spectroscopy and an isothermal capacitance measurement method for capture measurements at high and low temperatures, respectively. /spl sigma//sub p/ has been found to increase with temperature from 2.8 /spl times/ 10/sup -23/ cm/sup 2/ at 100 K to 2.7 /spl times/ 10/sup -22/ at 300 K, in agreement with a multiphonon emission process. The capture barrier for hole capture amounts to (30/spl plusmn/5) meV.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125516683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380704
J. Peyre, A. Goutelle, P. Pagnod-Rossiaux, J. Vinchant
The first polarization insensitive to 4 /spl times/ 4 switch matrix on InP with digital optical switches (DOS) has been recently presented (J-F. Vinchant et al., 1992). The authors report processing and performance improvements of this matrix by introduction of an etch stop layer in the structure grown by gas source molecular beam epitaxy (GSMBE). Several heterostructures grown on 2-inch wafers by GSMBE in a Virian reactor have been processed. This epitaxial technique allows high homogeneity of layers' thickness and doping. The optical characterization of the matrices has been done by using a 1.54 /spl mu/m wavelength laser for both transverse electric (TE) and transverse magnetic (TM) polarization. The results are reported.<>
最近首次在带数字光开关(DOS)的InP上实现了对4 /spl倍/ 4开关矩阵不敏感的偏振(J-F)。Vinchant et al.， 1992)。通过在气源分子束外延(GSMBE)生长的结构中引入蚀刻停止层，作者报道了该矩阵的加工和性能改进。在维里安反应器中，用GSMBE在2英寸硅片上生长了几种异质结构。这种外延技术允许层厚度和掺杂的高度均匀性。利用波长为1.54 /spl μ m的激光进行了横向电(TE)和横向磁(TM)极化的光学表征。结果被报告
{"title":"Improved fabrication of 4 /spl times/ 4 polarisation insensitive switch matrices on InP by introduction of an etch stop layer","authors":"J. Peyre, A. Goutelle, P. Pagnod-Rossiaux, J. Vinchant","doi":"10.1109/ICIPRM.1993.380704","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380704","url":null,"abstract":"The first polarization insensitive to 4 /spl times/ 4 switch matrix on InP with digital optical switches (DOS) has been recently presented (J-F. Vinchant et al., 1992). The authors report processing and performance improvements of this matrix by introduction of an etch stop layer in the structure grown by gas source molecular beam epitaxy (GSMBE). Several heterostructures grown on 2-inch wafers by GSMBE in a Virian reactor have been processed. This epitaxial technique allows high homogeneity of layers' thickness and doping. The optical characterization of the matrices has been done by using a 1.54 /spl mu/m wavelength laser for both transverse electric (TE) and transverse magnetic (TM) polarization. The results are reported.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"406 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129252780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380689
A. Godefroy, A. Le Corre, F. Clérot, J. Caulet, A. Poudoulec, S. Salaun, D. Lecrosnier
Strained epitaxial heterostructures yield attractive optoelectronic properties for laser diodes and optical amplifiers. Using various characterization techniques consisting of continuous and time resolved photoluminescence, X-ray diffraction, and transmission electron microscopy, the authors demonstrate the importance of the growth temperature on the relaxation of strained superlattices (SL). By lowering the growth temperature, high quality highly strained SL layers could be obtained.<>
{"title":"In/sub 1-x/Ga/sub x/As/In/sub .53/Ga/sub .47/As strained superlattices grown by gas source molecular beam epitaxy","authors":"A. Godefroy, A. Le Corre, F. Clérot, J. Caulet, A. Poudoulec, S. Salaun, D. Lecrosnier","doi":"10.1109/ICIPRM.1993.380689","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380689","url":null,"abstract":"Strained epitaxial heterostructures yield attractive optoelectronic properties for laser diodes and optical amplifiers. Using various characterization techniques consisting of continuous and time resolved photoluminescence, X-ray diffraction, and transmission electron microscopy, the authors demonstrate the importance of the growth temperature on the relaxation of strained superlattices (SL). By lowering the growth temperature, high quality highly strained SL layers could be obtained.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127821976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380674
P. Pagnod-Rossiaux, D. Bonnevie, M. Boulou, F. Gaborit, F. Chouquais, L. Goldstein
Beryllium is widely used in molecular beam epitaxy (MBE) as a p-type dopant. The authors report on the diffusion of Be in InP with beryllium concentrations in excess of 1/spl times/10/sup 19/ cm/sup -3/ during growth by gas-source MBE. Diffusion profiles are analyzed by secondary ion mass spectrometry and C(V) profiling. The dependency of diffusion on the type and doping of InP is investigated. It was found experimentally that diffusion depths are mainly correlated to the heavily-doped layer thickness, and strongly depend on the type and doping level of the host material. This is consistent with a mechanism of fast diffusing positively charged interstitial, further incorporated as a substitutional, with an electrical activity close to 1, as shown by C(V) profiling. Diffusion of Be in InP:Fe shows a peculiar iron out-diffusion induced by the excess interstitial Be.<>
{"title":"Control of beryllium redistribution in InP grown by gas source molecular beam epitaxy","authors":"P. Pagnod-Rossiaux, D. Bonnevie, M. Boulou, F. Gaborit, F. Chouquais, L. Goldstein","doi":"10.1109/ICIPRM.1993.380674","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380674","url":null,"abstract":"Beryllium is widely used in molecular beam epitaxy (MBE) as a p-type dopant. The authors report on the diffusion of Be in InP with beryllium concentrations in excess of 1/spl times/10/sup 19/ cm/sup -3/ during growth by gas-source MBE. Diffusion profiles are analyzed by secondary ion mass spectrometry and C(V) profiling. The dependency of diffusion on the type and doping of InP is investigated. It was found experimentally that diffusion depths are mainly correlated to the heavily-doped layer thickness, and strongly depend on the type and doping level of the host material. This is consistent with a mechanism of fast diffusing positively charged interstitial, further incorporated as a substitutional, with an electrical activity close to 1, as shown by C(V) profiling. Diffusion of Be in InP:Fe shows a peculiar iron out-diffusion induced by the excess interstitial Be.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130013696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380636
M. Ridgway, M. Davies, J. Sedivy, R. Vandenberg, S. Rolfe, T. Jackman
Electrical isolation of p/sup +/-InP epi-layers with B, O and Fe ion implantation at MeV energies has been investigated. For each of the three ion species, sheet resistance (R/sub s/) values of 5-8 /spl times/ 10/sup 6/ /spl Omega//square were attained after post-implant annealing at temperatures between 300-400/spl deg/C. R/sub s/ values were relatively insensitive to ion dose varying by one order of magnitude for an ion dose range of three orders of magnitude. Fe diffusion was apparent at an annealing temperature of 800/spl deg/C.<>
{"title":"MeV ion implantation for electrical isolation of p/sup +/ InP epi-layers","authors":"M. Ridgway, M. Davies, J. Sedivy, R. Vandenberg, S. Rolfe, T. Jackman","doi":"10.1109/ICIPRM.1993.380636","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380636","url":null,"abstract":"Electrical isolation of p/sup +/-InP epi-layers with B, O and Fe ion implantation at MeV energies has been investigated. For each of the three ion species, sheet resistance (R/sub s/) values of 5-8 /spl times/ 10/sup 6/ /spl Omega//square were attained after post-implant annealing at temperatures between 300-400/spl deg/C. R/sub s/ values were relatively insensitive to ion dose varying by one order of magnitude for an ion dose range of three orders of magnitude. Fe diffusion was apparent at an annealing temperature of 800/spl deg/C.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129558840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380652
H. Dauplaise, J. P. Lorenzo, E. Martín, K. Vaccaro, G. Ramseyer
The use of thin silicon films for indium phosphide device applications was investigated. Devices prepared with the silicon interlayers show a decrease in hysteresis, flat band voltage shift, and interface state density. Angular resolved X-ray photoelectron spectroscopy studies of the silicon-indium phosphide interface indicate that these effects are due to the interaction of the silicon with the native oxide of indium phosphide prior to dielectric deposition.<>
{"title":"Evaporated thin silicon interlayers for indium phosphide device applications","authors":"H. Dauplaise, J. P. Lorenzo, E. Martín, K. Vaccaro, G. Ramseyer","doi":"10.1109/ICIPRM.1993.380652","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380652","url":null,"abstract":"The use of thin silicon films for indium phosphide device applications was investigated. Devices prepared with the silicon interlayers show a decrease in hysteresis, flat band voltage shift, and interface state density. Angular resolved X-ray photoelectron spectroscopy studies of the silicon-indium phosphide interface indicate that these effects are due to the interaction of the silicon with the native oxide of indium phosphide prior to dielectric deposition.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129759737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380565
R. Khare, E. Hu, J.J. Brown, M. Melendes
Laser-assisted wet photoelectrochemical etching has been used in conjunction with a metal mask to make via holes in semi-insulating InP. It was found that the incident laser intensity and applied bias can control the degree of sidewall taper in the via holes as well as the vertical and lateral etch rates. It was found that the etch rate is faster for smaller via hole dimensions due to the smaller anode-to-cathode path length. There are however geometric limitations to the overall etched depth for small vias etched at low intensities due to the taper of the sidewalls. This method has demonstrated high etch rates and minimal undercut. Custom tailoring of the etch profile is achievable through adjustment of the etch parameters.<>
{"title":"Via hole formation in semi-insulating InP using wet photoelectrochemical etching","authors":"R. Khare, E. Hu, J.J. Brown, M. Melendes","doi":"10.1109/ICIPRM.1993.380565","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380565","url":null,"abstract":"Laser-assisted wet photoelectrochemical etching has been used in conjunction with a metal mask to make via holes in semi-insulating InP. It was found that the incident laser intensity and applied bias can control the degree of sidewall taper in the via holes as well as the vertical and lateral etch rates. It was found that the etch rate is faster for smaller via hole dimensions due to the smaller anode-to-cathode path length. There are however geometric limitations to the overall etched depth for small vias etched at low intensities due to the taper of the sidewalls. This method has demonstrated high etch rates and minimal undercut. Custom tailoring of the etch profile is achievable through adjustment of the etch parameters.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129838484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380580
W. Choi, Y. Hirayama, C. Fonstad
The authors present the results of investigations in which excitonic transitions in compressively strained InGaAs multiple quantum wells (QWs) on InP are studied by absorption and photoluminescence (PL) measurements. Specifically, quantitative exciton parameters such as transition energies, exciton binding energies and radii are estimated from absorption measurements. A comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.<>
{"title":"Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells","authors":"W. Choi, Y. Hirayama, C. Fonstad","doi":"10.1109/ICIPRM.1993.380580","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380580","url":null,"abstract":"The authors present the results of investigations in which excitonic transitions in compressively strained InGaAs multiple quantum wells (QWs) on InP are studied by absorption and photoluminescence (PL) measurements. Specifically, quantitative exciton parameters such as transition energies, exciton binding energies and radii are estimated from absorption measurements. A comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126301593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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