Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380691
P. Kae-Nune, M. di Forte-Poisson, C. Brylinski, J. di Persio
Mismatched Ga/sub 1-x/As/InAs/sub y/P/sub 1-y//InP double heterostructures were prepared by the low pressure-metal-organic chemical vapor deposition (LP-MOCVD) epitaxial technique for optical photodiode application in the 1.6 /spl mu/m-2.4 /spl mu/m range. The required narrow band gap active layer consists of a high indium composition Ga/sub 1-x/In/sub x/As (x = 0.8) layer. Different graded composition and superlattice buffer layers are investigated to accommodate the 1.8% lattice mismatch between InP and Ga/sub 0.2/In/sub 0.8/As. It is shown that a two microns thick InAs/sub y/P/sub 1-y/ graded composition layer (y up to 0.5) presents better optical and structural properties than a Ga/sub 1-x/In/sub x/As graded composition layer. High resolution X-ray diffraction investigations of an InAs/sub y/P/sub 1-y//Ga/sub 1-x/I superlattice shows its good ability to act as a barrier to dislocation propagation.<>
{"title":"Strain relaxation of Ga/sub 0.2/In/sub 0.8/As and InAs/sub 0.5/P/sub 0.5/ layers grown on InP substrate for 1.6 to 2.4 /spl mu/m spectral range Ga/sub x/In/sub 1-x/As/InAs/sub y/P/sub 1-y//InP photodiodes application","authors":"P. Kae-Nune, M. di Forte-Poisson, C. Brylinski, J. di Persio","doi":"10.1109/ICIPRM.1993.380691","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380691","url":null,"abstract":"Mismatched Ga/sub 1-x/As/InAs/sub y/P/sub 1-y//InP double heterostructures were prepared by the low pressure-metal-organic chemical vapor deposition (LP-MOCVD) epitaxial technique for optical photodiode application in the 1.6 /spl mu/m-2.4 /spl mu/m range. The required narrow band gap active layer consists of a high indium composition Ga/sub 1-x/In/sub x/As (x = 0.8) layer. Different graded composition and superlattice buffer layers are investigated to accommodate the 1.8% lattice mismatch between InP and Ga/sub 0.2/In/sub 0.8/As. It is shown that a two microns thick InAs/sub y/P/sub 1-y/ graded composition layer (y up to 0.5) presents better optical and structural properties than a Ga/sub 1-x/In/sub x/As graded composition layer. High resolution X-ray diffraction investigations of an InAs/sub y/P/sub 1-y//Ga/sub 1-x/I superlattice shows its good ability to act as a barrier to dislocation propagation.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126702805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380621
D. Pogány, S. Ababou, G. Guillot
A systematical study of physical mechanisms which control both the low frequency noise (LFN) and current in good and failed lattice-mismatched InP/In/sub x/Ga/sub 1-x/As/InP photodetectors has been performed. It has been shown that the LFN in lattice-mismatched InP/InGaAs/InP photodetectors results from the fluctuation of the excess leakage current which flows through localized leakage sites at the p-n junction. Results are analyzed in terms of influence of both material and technological defects. A hypothesis about the bulk or surface origin of the LFN is discussed in detail.<>
本文系统地研究了控制良好和失效的晶格失配InP/ in /sub x/Ga/sub 1-x/As/InP光电探测器低频噪声和电流的物理机制。研究表明，晶格失配InP/InGaAs/InP光电探测器的LFN是由流过p-n结局部泄漏点的过量泄漏电流的波动引起的。从材料缺陷和工艺缺陷两方面对结果进行了分析。详细讨论了一种关于LFN的体积或表面起源的假设。
{"title":"Noise and current characterization of lattice-mismatched LP-MOCVD grown InP/InGaAs/InP photodetector arrays","authors":"D. Pogány, S. Ababou, G. Guillot","doi":"10.1109/ICIPRM.1993.380621","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380621","url":null,"abstract":"A systematical study of physical mechanisms which control both the low frequency noise (LFN) and current in good and failed lattice-mismatched InP/In/sub x/Ga/sub 1-x/As/InP photodetectors has been performed. It has been shown that the LFN in lattice-mismatched InP/InGaAs/InP photodetectors results from the fluctuation of the excess leakage current which flows through localized leakage sites at the p-n junction. Results are analyzed in terms of influence of both material and technological defects. A hypothesis about the bulk or surface origin of the LFN is discussed in detail.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126843288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380681
J.K. Luo, H. Thomas
The characterization of Al/sub x/In/sub 1-x/As layers grown on n/sup +/-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition has been carried out by I-V-T, C-V, deep level transient spectroscopy and admittance spectroscopy measurements. Three defect levels E1, E2, and E3 were observed in both material systems and their densities were found to increase rapidly from /spl sim/10/sup 12/ cm/sup -3/ to /spl sim/10/sup 16/ cm/sup -3/ as the growth temperature was decreased from 740/spl deg/C to 500/spl deg/C. The increased defect density was found to be correlated with the decrease of the barrier height of the Schottky diodes, and the appearance of defect-assisted tunneling current in MBE-diodes. The activation energy of the defect E3 was found to increase with increasing AlAs mole fraction, and likely correlating with the /spl Gamma/-conduction band of AlInAs materials.<>
{"title":"Effect of growth condition on electrical properties of MBE and MOCVD-AlInAs","authors":"J.K. Luo, H. Thomas","doi":"10.1109/ICIPRM.1993.380681","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380681","url":null,"abstract":"The characterization of Al/sub x/In/sub 1-x/As layers grown on n/sup +/-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition has been carried out by I-V-T, C-V, deep level transient spectroscopy and admittance spectroscopy measurements. Three defect levels E1, E2, and E3 were observed in both material systems and their densities were found to increase rapidly from /spl sim/10/sup 12/ cm/sup -3/ to /spl sim/10/sup 16/ cm/sup -3/ as the growth temperature was decreased from 740/spl deg/C to 500/spl deg/C. The increased defect density was found to be correlated with the decrease of the barrier height of the Schottky diodes, and the appearance of defect-assisted tunneling current in MBE-diodes. The activation energy of the defect E3 was found to increase with increasing AlAs mole fraction, and likely correlating with the /spl Gamma/-conduction band of AlInAs materials.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129035252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380616
H. Yoshinaga, Y. Makita, A. Yamada, Y. Tsai, T. Iida, H. Shibata, A. Obara, T. Matsumori, S. Uekusa, K. Kainosho, O. Oda
In extremely pure InP when samples are annealed, five sharp emissions labeled by X/sub i/ (i = 1-4) and W were observed slightly below bound exciton emissions. Selectively-excited photoluminescence and photoluminescence excitation measurements were made to examine the features of these five emissions in the spectrum of annealed undoped InP. Four sharp emissions were observed below bound exciton emissions in undoped InP when samples were annealed at above 350/spl deg/C. Through low temperature photoluminescence excitation (PLE) spectroscopy, it was confirmed that these emissions are closely related with donor impurities. An additional sharp emission observed below the well-established donor-acceptor emission, denoted by W was also determined for the first time to be associated with the acceptor. It was concluded that PLE spectroscopy is a very powerful method to identify the origins of radiative transitions.<>
在极纯的InP中，当样品退火时，观察到X/sub i/ (i = 1-4)和W标记的五个尖锐发射略低于束缚激子发射。用选择性激发光致发光和光致发光激发测量来考察这五种辐射在退火未掺杂InP光谱中的特征。当样品在350/spl℃以上退火时，在未掺杂的InP中观察到四个激子发射。通过低温光致发光激发(PLE)光谱，证实了这些发射与供体杂质密切相关。在已确定的供体-受体发射体下方观察到的另一个尖锐发射体，用W表示，也首次确定与受体相关。结果表明，PLE光谱是一种非常有效的识别辐射跃迁起源的方法。
{"title":"Photoluminescence excitation spectra from undoped InP","authors":"H. Yoshinaga, Y. Makita, A. Yamada, Y. Tsai, T. Iida, H. Shibata, A. Obara, T. Matsumori, S. Uekusa, K. Kainosho, O. Oda","doi":"10.1109/ICIPRM.1993.380616","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380616","url":null,"abstract":"In extremely pure InP when samples are annealed, five sharp emissions labeled by X/sub i/ (i = 1-4) and W were observed slightly below bound exciton emissions. Selectively-excited photoluminescence and photoluminescence excitation measurements were made to examine the features of these five emissions in the spectrum of annealed undoped InP. Four sharp emissions were observed below bound exciton emissions in undoped InP when samples were annealed at above 350/spl deg/C. Through low temperature photoluminescence excitation (PLE) spectroscopy, it was confirmed that these emissions are closely related with donor impurities. An additional sharp emission observed below the well-established donor-acceptor emission, denoted by W was also determined for the first time to be associated with the acceptor. It was concluded that PLE spectroscopy is a very powerful method to identify the origins of radiative transitions.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126555782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380632
S. Loualiche, A. Le Corre, C. Vaudry, L. Henry, F. Clérot
A single epitaxy step buried heterostructure laser has been fabricated. The laser was processed by using molecular beam epitaxy (MBE) grown layers, a reactive ion etching technique and self-aligned technology. The dielectric Si/sub x/N/sub y/ was used as a device lateral guiding layer. The SiN optical index is the same as InP and its optical loss and leakage current at 2V are lower than 100 cm/sup -1/ and 100 nA respectively. The device threshold current and efficiency are 30 mA and 0.2 W/A.<>
制备了一种单外延阶埋式异质结构激光器。采用分子束外延(MBE)生长层、反应离子刻蚀技术和自对准技术制备激光器。采用介电材料Si/sub x/N/sub y/作为器件侧导层。SiN的光学指数与InP相同，在2V时的光损耗和漏电流分别小于100 cm/sup -1/和100 nA。器件的阈值电流为30ma，效率为0.2 W/ a
{"title":"GSMBE single step epitaxy of pseudo buried heterostructure laser","authors":"S. Loualiche, A. Le Corre, C. Vaudry, L. Henry, F. Clérot","doi":"10.1109/ICIPRM.1993.380632","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380632","url":null,"abstract":"A single epitaxy step buried heterostructure laser has been fabricated. The laser was processed by using molecular beam epitaxy (MBE) grown layers, a reactive ion etching technique and self-aligned technology. The dielectric Si/sub x/N/sub y/ was used as a device lateral guiding layer. The SiN optical index is the same as InP and its optical loss and leakage current at 2V are lower than 100 cm/sup -1/ and 100 nA respectively. The device threshold current and efficiency are 30 mA and 0.2 W/A.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127901613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380659
A. Overs, G. Jacob, M. Besland, V. Drouot, M. Gendry, G. Hollinger, M. Gauneau, D. Lecrosnier, J. Benchimol
The authors report on new X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) characterization results obtained on Epi-ready InP wafers as prepared with an optimized process and then stored in air for more than six months. They present a simplified molecular beam epitaxy oxide desorption procedure adapted to the new products. The quality of this procedure is demonstrated by the high performance of InAlAs/InGaAs high electron mobility transistor structures. The properties of the epitaxial structures prepared with different growth techniques are evaluated on the basis of secondary ion mass spectrometry results for residual impurities at epilayer-substrate interfaces.<>
{"title":"Evaluation of InP Epi-ready wafers for epitaxial growth","authors":"A. Overs, G. Jacob, M. Besland, V. Drouot, M. Gendry, G. Hollinger, M. Gauneau, D. Lecrosnier, J. Benchimol","doi":"10.1109/ICIPRM.1993.380659","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380659","url":null,"abstract":"The authors report on new X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) characterization results obtained on Epi-ready InP wafers as prepared with an optimized process and then stored in air for more than six months. They present a simplified molecular beam epitaxy oxide desorption procedure adapted to the new products. The quality of this procedure is demonstrated by the high performance of InAlAs/InGaAs high electron mobility transistor structures. The properties of the epitaxial structures prepared with different growth techniques are evaluated on the basis of secondary ion mass spectrometry results for residual impurities at epilayer-substrate interfaces.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"85 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115795180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380556
A. Feygenson, R. Montgomery, P.R. Smith, R. Hamm, M. Haner, R.D. Yadvish, M. Panish, H. Temkin, D. Ritter
The authors investigate an alternative structure of a InP/GaInAs composite collector heterostructure bipolar transistor (CC HBT) which relied on a thin lightly doped quaternary layer of GaInAsP placed between GaInAs and InP regions of the collector instead of the doped interface. In this structure the accurate doping control of GaInAsP layer was not required. The resulting transistor showed high gain, high breakdown voltage BV/sub CEO/, f/sub T/ of 137 GHz and improved scalability characteristics. The usefulness of high speed CC HBTs for circuits was demonstrated by 28 GHz bandwidth, 39 db/spl Omega/ gain monolithic transimpedance amplifiers and 32 Gbit/s hybrid optical receivers.<>
{"title":"InP/GaInAs composite collector heterostructure bipolar transistors and circuits","authors":"A. Feygenson, R. Montgomery, P.R. Smith, R. Hamm, M. Haner, R.D. Yadvish, M. Panish, H. Temkin, D. Ritter","doi":"10.1109/ICIPRM.1993.380556","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380556","url":null,"abstract":"The authors investigate an alternative structure of a InP/GaInAs composite collector heterostructure bipolar transistor (CC HBT) which relied on a thin lightly doped quaternary layer of GaInAsP placed between GaInAs and InP regions of the collector instead of the doped interface. In this structure the accurate doping control of GaInAsP layer was not required. The resulting transistor showed high gain, high breakdown voltage BV/sub CEO/, f/sub T/ of 137 GHz and improved scalability characteristics. The usefulness of high speed CC HBTs for circuits was demonstrated by 28 GHz bandwidth, 39 db/spl Omega/ gain monolithic transimpedance amplifiers and 32 Gbit/s hybrid optical receivers.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130177287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380581
A. M. Kusters, A. Kohl, S. Brittner, T. Funke, V. Sommer, K. Heime
A new type of low pressure metal organic vapor epitaxial grown high electron mobility transistor (HEMT) device is reported. By using only a strained In/sub 0.75/Ga/sub 0.25/As quantum well (QW)-channel and InP as a carrier supplying n-type, /spl delta/-doped and barrier-enhancement p-type layers, a high performance pseudomorphic double heterostructure (DH)-HEMT has been created. The authors present the growth, device fabrication, material quality, and the DC- and RF-performance of 0.8 /spl mu/m-devices, which show extremely good characteristics. The approach described here may serve as an useful alternative to InAlAs containing structures because it eliminates many troublesome effects such as kinks, deep levels, interface states, high output conductances and gate leakages, which are attributed to a large extent to impurity-Al interactions.<>
{"title":"A new Al-free HFET structure: The pseudomorphic p-InP/n-InP/In/sub 0.75/GaAs double heterostructure /spl delta/-doped HEMT","authors":"A. M. Kusters, A. Kohl, S. Brittner, T. Funke, V. Sommer, K. Heime","doi":"10.1109/ICIPRM.1993.380581","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380581","url":null,"abstract":"A new type of low pressure metal organic vapor epitaxial grown high electron mobility transistor (HEMT) device is reported. By using only a strained In/sub 0.75/Ga/sub 0.25/As quantum well (QW)-channel and InP as a carrier supplying n-type, /spl delta/-doped and barrier-enhancement p-type layers, a high performance pseudomorphic double heterostructure (DH)-HEMT has been created. The authors present the growth, device fabrication, material quality, and the DC- and RF-performance of 0.8 /spl mu/m-devices, which show extremely good characteristics. The approach described here may serve as an useful alternative to InAlAs containing structures because it eliminates many troublesome effects such as kinks, deep levels, interface states, high output conductances and gate leakages, which are attributed to a large extent to impurity-Al interactions.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131515891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380699
B. Podor, S. Novikov, I. G. Savel’ev, G. Gombos
The authors present the results of Shubnikov m- effect measurements in two-dimensional electron gas in modulation-doped Ga/sub 0.47/In/sub 0.53/As/InP heterostructures grown by liquid phase epitaxy. Shubnikov-de Haas measurements were performed at 4.2 K temperature in magnetic fields up to 5.3 Tesla using a superconducting magnet system. From the magnetoresistance oscillation amplitudes the quantum scattering time and its ratio to the classical scattering time were deduced.<>
本文报道了利用液相外延生长的调制掺杂Ga/sub 0.47/ in /sub 0.53/As/InP异质结构中二维电子气体的舒布尼科夫m效应测量结果。Shubnikov-de Haas测量在4.2 K温度下，使用超导磁体系统在高达5.3特斯拉的磁场中进行。由磁阻振荡幅值推导出量子散射时间及其与经典散射时间的比值
{"title":"Quantum versus classical scattering time in liquid phase epitaxial Ga/sub 0.47/In/sub 0.53/As/InP","authors":"B. Podor, S. Novikov, I. G. Savel’ev, G. Gombos","doi":"10.1109/ICIPRM.1993.380699","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380699","url":null,"abstract":"The authors present the results of Shubnikov m- effect measurements in two-dimensional electron gas in modulation-doped Ga/sub 0.47/In/sub 0.53/As/InP heterostructures grown by liquid phase epitaxy. Shubnikov-de Haas measurements were performed at 4.2 K temperature in magnetic fields up to 5.3 Tesla using a superconducting magnet system. From the magnetoresistance oscillation amplitudes the quantum scattering time and its ratio to the classical scattering time were deduced.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131749746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380586
V. Drouot, M. Gendry, G. Hollinger, C. Santinelli, X. Letartre, P. Viktorovitch
High electron mobility pseudomorphic In/sub x/Ga/sub 1-x/As/InAlAs heterostructures have been fabricated on InP for a wide range of In composition and growth temperatures. Both mobility and carrier concentrations can be increased by increasing the indium content in the channel up to x=0.75. The highest performance has been obtained with x=0.75 for a growth temperature of 500/spl deg/C, when adapted growth conditions or growth interruptions are used to reduce the interface roughness. The electron mobility of such a structure reaches 14,500 cm/sup 2//V.s at 300 K and 101,000 cm/sup 2//V.s at 77 K for a two-dimensional electron gas concentration of 2.4 10/sup 12/ cm/sup -2/.<>
{"title":"High electron mobility in indium-rich pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As structures grown by MBE on InP","authors":"V. Drouot, M. Gendry, G. Hollinger, C. Santinelli, X. Letartre, P. Viktorovitch","doi":"10.1109/ICIPRM.1993.380586","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380586","url":null,"abstract":"High electron mobility pseudomorphic In/sub x/Ga/sub 1-x/As/InAlAs heterostructures have been fabricated on InP for a wide range of In composition and growth temperatures. Both mobility and carrier concentrations can be increased by increasing the indium content in the channel up to x=0.75. The highest performance has been obtained with x=0.75 for a growth temperature of 500/spl deg/C, when adapted growth conditions or growth interruptions are used to reduce the interface roughness. The electron mobility of such a structure reaches 14,500 cm/sup 2//V.s at 300 K and 101,000 cm/sup 2//V.s at 77 K for a two-dimensional electron gas concentration of 2.4 10/sup 12/ cm/sup -2/.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133070021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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