Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380703
T. Brenner, R. Dall' Ara, C. Holtmann, P. Besse, H. Melchior
The authors report here the realization of InGaAsP/InP traveling wave optical amplifiers operating at /spl lambda/ = 1.3 /spl mu/m integrated with passive waveguides. The fabrication is based on two stage low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) using thin etch-stop layers for easy fabrication and high reproducibility. The optical amplifiers are butt-jointed to the passive waveguides leading to high amplifier interface coupling efficiencies of over 90% and interface reflectivities below 5 /spl times/ 10/sup -6/. Single pass fiber-fiber gains of +17 dB (TE) and +6 dB (TM) with high saturation output power of -3.8 dBm were achieved.<>
本文报道了集成无源波导的工作频率为/spl λ / = 1.3 /spl mu/m的InGaAsP/InP行波光放大器的实现。该制造基于两级低压金属有机气相外延(LP-MOVPE)，使用薄蚀刻停止层，易于制造和高再现性。光放大器与无源波导对接，使得放大器接口耦合效率高达90%以上，接口反射率低于5 /spl倍/ 10/sup -6/。单通光纤增益分别为+17 dB (TE)和+6 dB (TM)，饱和输出功率为-3.8 dBm。
{"title":"High gain low reflectivity travelling wave semiconductor optical amplifiers integrated with passive waveguides operating at 1.3 /spl mu/m wavelength","authors":"T. Brenner, R. Dall' Ara, C. Holtmann, P. Besse, H. Melchior","doi":"10.1109/ICIPRM.1993.380703","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380703","url":null,"abstract":"The authors report here the realization of InGaAsP/InP traveling wave optical amplifiers operating at /spl lambda/ = 1.3 /spl mu/m integrated with passive waveguides. The fabrication is based on two stage low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) using thin etch-stop layers for easy fabrication and high reproducibility. The optical amplifiers are butt-jointed to the passive waveguides leading to high amplifier interface coupling efficiencies of over 90% and interface reflectivities below 5 /spl times/ 10/sup -6/. Single pass fiber-fiber gains of +17 dB (TE) and +6 dB (TM) with high saturation output power of -3.8 dBm were achieved.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115969030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380682
M.K. Lee, C. Hu, M. Lin
A new epitaxial growth process was developed using phosphine modulation using conventional metal-organic chemical vapor deposition (MOCVD). With this method, phosphine was switched off a short time in each cycle and provided a metal-rich growth surface. With higher surface mobility of indium atoms than that of InP molecules, crystal quality was improved significantly. Photoluminescence full width at half maximum of 5.6 meV at 77 K was achieved under optimum growth conditions.<>
{"title":"MOCVD growth of InP by phosphine modulation","authors":"M.K. Lee, C. Hu, M. Lin","doi":"10.1109/ICIPRM.1993.380682","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380682","url":null,"abstract":"A new epitaxial growth process was developed using phosphine modulation using conventional metal-organic chemical vapor deposition (MOCVD). With this method, phosphine was switched off a short time in each cycle and provided a metal-rich growth surface. With higher surface mobility of indium atoms than that of InP molecules, crystal quality was improved significantly. Photoluminescence full width at half maximum of 5.6 meV at 77 K was achieved under optimum growth conditions.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124946505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380657
W. Hong, G. Chang, R. Bhat, J. Hayes
The authors have demonstrated a monolithically integrated multichannel receiver optoelectronic integrated circuit (OEIC) for wavelength-division-multiplexing (WDM) applications. The OEIC is based on a InAlAs/InGaAs metal-semiconductor-metal (MSM) detector and high-electron-mobility-transistor (HEMT) device technologies. The response characteristics of the OEIC were measured by sweeping all four channels using a 1.3 /spl mu/m laser diode of known frequency response. A uniform frequency response was measured with each channel having a -3 dB bandwidth of 1.3 GHz. The sensitivity was -25.2 dBm at 1.2 Gb/s for a bit-error-rate of 10/sup -9/. The high sensitivity and high-speed operation is attributed to the low-capacitance MSM detector and the high-performance HEMT devices.<>
{"title":"Multichannel MSM-HEMT receiver OEICs for WDM networks","authors":"W. Hong, G. Chang, R. Bhat, J. Hayes","doi":"10.1109/ICIPRM.1993.380657","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380657","url":null,"abstract":"The authors have demonstrated a monolithically integrated multichannel receiver optoelectronic integrated circuit (OEIC) for wavelength-division-multiplexing (WDM) applications. The OEIC is based on a InAlAs/InGaAs metal-semiconductor-metal (MSM) detector and high-electron-mobility-transistor (HEMT) device technologies. The response characteristics of the OEIC were measured by sweeping all four channels using a 1.3 /spl mu/m laser diode of known frequency response. A uniform frequency response was measured with each channel having a -3 dB bandwidth of 1.3 GHz. The sensitivity was -25.2 dBm at 1.2 Gb/s for a bit-error-rate of 10/sup -9/. The high sensitivity and high-speed operation is attributed to the low-capacitance MSM detector and the high-performance HEMT devices.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125250195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380548
K. Kadoiwa, M. Kato, T. Motoda, K. Mori, N. Fujii, S. Ochi, M. Yasuda, T. Sonoda, T. Murotani
The authors found that the inactive Zn in GaInP/(Al/sub 0.7/Ga/sub 0.3/)InP quantum well structures peculiarly degraded the carrier life time which strongly affected the laser's performance and reliability. The novel cap layer of n-(Al/sub 0.7/Ga/sub 0.3/)InP realized almost 100% activation of Zn in the p-(Al/sub 0.7/Ga/sub 0.3/)InP layer. The same temperature dependence on the threshold current density of visible lasers was obtained by introducing the novel n-cap layer. The kink level of 160 mW and the maximum light output power of 204 mW at 25/spl deg/C were realized by introducing the novel cap layer of the n-(Al/sub 0.7/Ga/sub 0.3/)InP for the window structured visible laser. This visible laser could achieve the finest reliability under stable continuous wave operation over 2600 hrs under 50 mW at 50/spl deg/C.<>
{"title":"Comprehensive Zn doping investigation for GaInP/AlGaInP quantum well structures for high power visible lasers grown by MOCVD","authors":"K. Kadoiwa, M. Kato, T. Motoda, K. Mori, N. Fujii, S. Ochi, M. Yasuda, T. Sonoda, T. Murotani","doi":"10.1109/ICIPRM.1993.380548","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380548","url":null,"abstract":"The authors found that the inactive Zn in GaInP/(Al/sub 0.7/Ga/sub 0.3/)InP quantum well structures peculiarly degraded the carrier life time which strongly affected the laser's performance and reliability. The novel cap layer of n-(Al/sub 0.7/Ga/sub 0.3/)InP realized almost 100% activation of Zn in the p-(Al/sub 0.7/Ga/sub 0.3/)InP layer. The same temperature dependence on the threshold current density of visible lasers was obtained by introducing the novel n-cap layer. The kink level of 160 mW and the maximum light output power of 204 mW at 25/spl deg/C were realized by introducing the novel cap layer of the n-(Al/sub 0.7/Ga/sub 0.3/)InP for the window structured visible laser. This visible laser could achieve the finest reliability under stable continuous wave operation over 2600 hrs under 50 mW at 50/spl deg/C.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122666343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380550
T. Lin, H. Kaibe, C. Kaneshiro, S. Miyazaki, T. Okumura
Although metal contacts to oxidized n-InP show relatively high Schottky-barrier height, they will not be stable upon thermal annealing since the interfacial reaction might dissociate the oxides. The authors present the change in electrical properties of Al/n-InP contacts upon the rapid thermal annealing in relation to the interfacial reaction. In a certain range of the annealing temperature, a rectifying contact was obtained with a high Schottky-barrier height close to 0.7 eV, for which compositional and electrical microanalysis were carried out by means of the electron-probe microanalysis and the scanning internal-photoemission microscopy. The results are discussed.<>
{"title":"Microanalysis of inhomogeneous reaction and Schottky-barrier change of Al/n-InP contacts upon rapid thermal annealing","authors":"T. Lin, H. Kaibe, C. Kaneshiro, S. Miyazaki, T. Okumura","doi":"10.1109/ICIPRM.1993.380550","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380550","url":null,"abstract":"Although metal contacts to oxidized n-InP show relatively high Schottky-barrier height, they will not be stable upon thermal annealing since the interfacial reaction might dissociate the oxides. The authors present the change in electrical properties of Al/n-InP contacts upon the rapid thermal annealing in relation to the interfacial reaction. In a certain range of the annealing temperature, a rectifying contact was obtained with a high Schottky-barrier height close to 0.7 eV, for which compositional and electrical microanalysis were carried out by means of the electron-probe microanalysis and the scanning internal-photoemission microscopy. The results are discussed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122798018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380582
P. Dollfus, C. Brisset, S. Galdin, P. Hesto
The authors present a theoretical study of a self-aligned dual-gate InAlAs/InGaAs/InAlAs high electron mobility transistor (HEMT) using two-dimensional Monte Carlo simulation. The gate closer to the source (G1) is used to modulate the electron injection. The second gate (G2) is biased to a constant voltage V/sub G2S/ greater than all possible values of the control-gate voltage V/sub G1S/. Its role is to favor the occurrence of a screening effect between the drain contact and the first gated region of the channel. As soon as the domain of k-space transferred electrons grows between the two gates, the second gated-region becomes so resistive as to absorb the additional drain voltage. The potential barrier that controls the electron injection is then screened from drain potential variations. This screening effect allows restoration of an excellent saturation behavior while retaining high transconductance and cutoff frequency. Its role is to favor the occurrence of a screening effect between the drain contact and the first gated-region becomes so resistive as to absorb the additional drain voltage. The potential barrier that controls the electron injection is then screened from drain potential variations. This screening effect allows restoration of an excellent saturation behavior while retaining high transconductance and cutoff frequency.<>
{"title":"Monte Carlo study of a self-aligned dual 50nm-gate InAlAs/InGaAs HEMT exhibiting high performances without short-channel effects","authors":"P. Dollfus, C. Brisset, S. Galdin, P. Hesto","doi":"10.1109/ICIPRM.1993.380582","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380582","url":null,"abstract":"The authors present a theoretical study of a self-aligned dual-gate InAlAs/InGaAs/InAlAs high electron mobility transistor (HEMT) using two-dimensional Monte Carlo simulation. The gate closer to the source (G1) is used to modulate the electron injection. The second gate (G2) is biased to a constant voltage V/sub G2S/ greater than all possible values of the control-gate voltage V/sub G1S/. Its role is to favor the occurrence of a screening effect between the drain contact and the first gated region of the channel. As soon as the domain of k-space transferred electrons grows between the two gates, the second gated-region becomes so resistive as to absorb the additional drain voltage. The potential barrier that controls the electron injection is then screened from drain potential variations. This screening effect allows restoration of an excellent saturation behavior while retaining high transconductance and cutoff frequency. Its role is to favor the occurrence of a screening effect between the drain contact and the first gated-region becomes so resistive as to absorb the additional drain voltage. The potential barrier that controls the electron injection is then screened from drain potential variations. This screening effect allows restoration of an excellent saturation behavior while retaining high transconductance and cutoff frequency.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131104860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380585
B. R. Bennett, J. D. del Alamo
The authors investigated the thermal stability of strained layers of InGaAs and InAlAs on InP. Epilayer and interface quality was assessed by high-resolution X-ray diffraction and electron mobility measurement as a function of the annealing cycle. Both techniques show that high-quality, pseudomorphic heterostructures are thermally stable at annealing temperatures of up to 700-800/spl deg/C, despite exceeding the Matthews-Blakeslee critical layer thickness. These findings suggest that layers exceeding the predicted critical thickness may be successfully used in device heterostructures.<>
{"title":"Thermal stability of pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub y/Al/sub 1-y/As/InP heterostructures","authors":"B. R. Bennett, J. D. del Alamo","doi":"10.1109/ICIPRM.1993.380585","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380585","url":null,"abstract":"The authors investigated the thermal stability of strained layers of InGaAs and InAlAs on InP. Epilayer and interface quality was assessed by high-resolution X-ray diffraction and electron mobility measurement as a function of the annealing cycle. Both techniques show that high-quality, pseudomorphic heterostructures are thermally stable at annealing temperatures of up to 700-800/spl deg/C, despite exceeding the Matthews-Blakeslee critical layer thickness. These findings suggest that layers exceeding the predicted critical thickness may be successfully used in device heterostructures.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131569027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380577
A. Freundlich, A. Bensaoula, A. Bensaoula, V. Rossignol
The growth of a new type of pseudomorphically strained layer superlattice is investigated. InP(n)/GaAs(m)/GaP(n)/GaAs(m) superlattices with n=1 to 4 monolayers and m=4 to 40 monolayers were grown using chemical beam epitaxy on GaAs substrates. Perfectly strain balanced InP(n)/GaAs(m)/GaP(n)/ GaAs(m) superlattices with n=4 monolayers were realized. The global mismatch introduced by 50 period In(4)/GaAs(4)/GaP(4)/GaAs(4) superlattices is below 2/spl times/10/sup -3/ and superlattice satellite peaks are clearly observed in the diffraction patterns, demonstrating that chemical beam epitaxy is perfectly suited for realization of such strain balanced short superlattices.<>
{"title":"InP/GaAs/GaP/GaAs short period superlattices grown by chemical beam epitaxy","authors":"A. Freundlich, A. Bensaoula, A. Bensaoula, V. Rossignol","doi":"10.1109/ICIPRM.1993.380577","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380577","url":null,"abstract":"The growth of a new type of pseudomorphically strained layer superlattice is investigated. InP(n)/GaAs(m)/GaP(n)/GaAs(m) superlattices with n=1 to 4 monolayers and m=4 to 40 monolayers were grown using chemical beam epitaxy on GaAs substrates. Perfectly strain balanced InP(n)/GaAs(m)/GaP(n)/ GaAs(m) superlattices with n=4 monolayers were realized. The global mismatch introduced by 50 period In(4)/GaAs(4)/GaP(4)/GaAs(4) superlattices is below 2/spl times/10/sup -3/ and superlattice satellite peaks are clearly observed in the diffraction patterns, demonstrating that chemical beam epitaxy is perfectly suited for realization of such strain balanced short superlattices.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115162742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380672
M. Wanlass, J. Ward, K. Emery, T. Coutts
Recent research has been directed towards the development of two-terminal, i.e., series-connected, monolithic InP/Ga/sub 0.47/In/sub 0. /tandem cells. Two fundamental problems must be addressed to realize high-performance, two-terminal cells. First, an ohmic electrical interconnect between the top and bottom subcells must be integrated into the monolithic structure to connect the subcells in series. The optical and joule losses in the interconnect should be negligible compared to the tandem cell output. Second, because the subcells are connected in series, techniques for matching the subcell photocurrents, and maximizing the tandem cell photocurrent, under relevant solar spectra, are necessary to achieve the highest tandem cell efficiency. The authors describe preliminary progress towards solving these problems, and outline directions for future work.<>
{"title":"Monolithic, two-terminal InP/Ga/sub 0.47/In/sub 0.53/As tandem solar cells","authors":"M. Wanlass, J. Ward, K. Emery, T. Coutts","doi":"10.1109/ICIPRM.1993.380672","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380672","url":null,"abstract":"Recent research has been directed towards the development of two-terminal, i.e., series-connected, monolithic InP/Ga/sub 0.47/In/sub 0. /tandem cells. Two fundamental problems must be addressed to realize high-performance, two-terminal cells. First, an ohmic electrical interconnect between the top and bottom subcells must be integrated into the monolithic structure to connect the subcells in series. The optical and joule losses in the interconnect should be negligible compared to the tandem cell output. Second, because the subcells are connected in series, techniques for matching the subcell photocurrents, and maximizing the tandem cell photocurrent, under relevant solar spectra, are necessary to achieve the highest tandem cell efficiency. The authors describe preliminary progress towards solving these problems, and outline directions for future work.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132545412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380561
A. Iketani, M. Ohkubo, S. Namiki, T. Ijichi, T. Kikuta
InGaAs/GaAs/InGaAsP continuously graded index separate confinement heterostructure (GRIN-SCH) lasers were fabricated by metal organic chemical vapor deposition (MOCVD) for the first time. Transmission electron microscope observation and secondary ion mass spectroscopy measurement show that the continuously graded InGaAsP layers were grown excellently. A very high characteristic temperature of 307K was obtained on the ridge waveguide lasers. Very stable and narrow far field patterns were obtained. The coupling to a single mode fiber was performed with high coupling efficiency of 60%, and output power as high as 78mW was achieved.<>
{"title":"First fabrication of continuously graded InGaAsP on GaAs for 0.98/spl mu/m lasers","authors":"A. Iketani, M. Ohkubo, S. Namiki, T. Ijichi, T. Kikuta","doi":"10.1109/ICIPRM.1993.380561","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380561","url":null,"abstract":"InGaAs/GaAs/InGaAsP continuously graded index separate confinement heterostructure (GRIN-SCH) lasers were fabricated by metal organic chemical vapor deposition (MOCVD) for the first time. Transmission electron microscope observation and secondary ion mass spectroscopy measurement show that the continuously graded InGaAsP layers were grown excellently. A very high characteristic temperature of 307K was obtained on the ridge waveguide lasers. Very stable and narrow far field patterns were obtained. The coupling to a single mode fiber was performed with high coupling efficiency of 60%, and output power as high as 78mW was achieved.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114160335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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