Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380668
M. Yamamoto, N. Yamamoto, J. Nakano
The authors report strained InAsP quantum-well structures emitting at 1.3 /spl mu/m that were grown by low-pressure metalorganic vapor phase epitaxy. Threshold current densities as low as 88 A/cm/sup 2/ were achieved with a graded-index separate-confinement-heterostructure single-quantum-well 40-/spl mu/m wide ridge stripe waveguide laser diode. This superior laser performance clearly demonstrates the high material quality of strained InAsP/InGaAsP quantum well structures for long wavelength optical device applications.<>
作者报道了通过低压金属有机气相外延生长的应变InAsP量子阱结构，其发射速度为1.3 /spl μ m /m。采用梯度折射率分离禁锢异质结构单量子阱40-/spl mu/m宽脊条波导激光器，实现了低至88 A/cm/sup / /的阈值电流密度。这种优异的激光性能清楚地证明了应变InAsP/InGaAsP量子阱结构在长波光学器件应用中的高材料质量。
{"title":"MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low threshold 1.3 /spl mu/m lasers","authors":"M. Yamamoto, N. Yamamoto, J. Nakano","doi":"10.1109/ICIPRM.1993.380668","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380668","url":null,"abstract":"The authors report strained InAsP quantum-well structures emitting at 1.3 /spl mu/m that were grown by low-pressure metalorganic vapor phase epitaxy. Threshold current densities as low as 88 A/cm/sup 2/ were achieved with a graded-index separate-confinement-heterostructure single-quantum-well 40-/spl mu/m wide ridge stripe waveguide laser diode. This superior laser performance clearly demonstrates the high material quality of strained InAsP/InGaAsP quantum well structures for long wavelength optical device applications.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133549482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380717
W. Gillin, I. Bradley, W. L. Foo, K. Homewood, S. Perrin, P.C. Spurdens
The diffusion coefficient for arsenic and phosphorous interdiffusion has been measured as a function of temperature in In/sub 0.66/Ga/sub 0.33/As/ In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ strained quantum wells, using the photoluminescence from the n = 1 electron to heavy hole transition. The authors have used the shift in the photoluminescence from a 100/spl Aring/ single quantum well of In/sub 0.66/Ga/sub 0.33/As in In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ barriers with annealing to monitor the interdiffusion. In this system there is no concentration gradient to drive group III interdiffusion and therefore the variation in the photoluminescence transition energy was modeled using only phosphorous/arsenic interdiffusion in the model. By performing several anneals to a single sample and measuring the shift in the photoluminescence after each anneal the interdiffusion was monitored as a function of time. Between temperatures of 900/spl deg/C and 700/spl deg/C the diffusion coefficient, D, can be described using the relationship D = D/sub o/exp(-E/sub A//kT) where D/sub o/ = 507 cm/sup 2//s and E/sub A/ = 3.9 eV.<>
{"title":"Group V interdiffusion in In/sub 0.66/Ga/sub 0.33/As/ In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ quantum well structures","authors":"W. Gillin, I. Bradley, W. L. Foo, K. Homewood, S. Perrin, P.C. Spurdens","doi":"10.1109/ICIPRM.1993.380717","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380717","url":null,"abstract":"The diffusion coefficient for arsenic and phosphorous interdiffusion has been measured as a function of temperature in In/sub 0.66/Ga/sub 0.33/As/ In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ strained quantum wells, using the photoluminescence from the n = 1 electron to heavy hole transition. The authors have used the shift in the photoluminescence from a 100/spl Aring/ single quantum well of In/sub 0.66/Ga/sub 0.33/As in In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ barriers with annealing to monitor the interdiffusion. In this system there is no concentration gradient to drive group III interdiffusion and therefore the variation in the photoluminescence transition energy was modeled using only phosphorous/arsenic interdiffusion in the model. By performing several anneals to a single sample and measuring the shift in the photoluminescence after each anneal the interdiffusion was monitored as a function of time. Between temperatures of 900/spl deg/C and 700/spl deg/C the diffusion coefficient, D, can be described using the relationship D = D/sub o/exp(-E/sub A//kT) where D/sub o/ = 507 cm/sup 2//s and E/sub A/ = 3.9 eV.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134502794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380590
A. Fathimulla, H. Hier, J. Abrahams
The authors report the performance of In/sub 1-x-y/Ga/sub x/Al/sub y/As FETs lattice-matched to InP. An improvement in the drain-source breakdown voltage was achieved by adding Al in the channel of InGaAs/InAlAs FETs. The microwave gains are comparable to those of the InGaAs/InAlAs FETs. The DC and RF characteristics are discussed.<>
本文报道了与InP晶格匹配的In/sub - 1-x-y/Ga/sub -x /Al/sub -y/ As fet的性能。通过在InGaAs/InAlAs fet通道中添加Al，可以改善漏源击穿电压。微波增益可与InGaAs/InAlAs fet相媲美。讨论了直流和射频特性。
{"title":"Increased breakdown voltages in In/sub 1-x-y/Ga/sub x/Al/sub y/As/InAlAs FETs","authors":"A. Fathimulla, H. Hier, J. Abrahams","doi":"10.1109/ICIPRM.1993.380590","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380590","url":null,"abstract":"The authors report the performance of In/sub 1-x-y/Ga/sub x/Al/sub y/As FETs lattice-matched to InP. An improvement in the drain-source breakdown voltage was achieved by adding Al in the channel of InGaAs/InAlAs FETs. The microwave gains are comparable to those of the InGaAs/InAlAs FETs. The DC and RF characteristics are discussed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131409229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380598
I. Adesida, K. Nummila, M. Tong, C. Caneau, R. Bhat
The DC and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 /spl mu/m T-gates fabricated in a organo-metallic vapor phase epitaxy (OMVPE)-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, g/sub m/, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, f/sub T/, of 187 GHz are shown. To date, this is the highest f/sub T/ reported for OMVPE-grown MODFETs.<>
{"title":"High-performance 0.15 /spl mu/m-gatelength OMVPE-grown InAlAs/InGaAs MODFETs","authors":"I. Adesida, K. Nummila, M. Tong, C. Caneau, R. Bhat","doi":"10.1109/ICIPRM.1993.380598","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380598","url":null,"abstract":"The DC and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 /spl mu/m T-gates fabricated in a organo-metallic vapor phase epitaxy (OMVPE)-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, g/sub m/, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, f/sub T/, of 187 GHz are shown. To date, this is the highest f/sub T/ reported for OMVPE-grown MODFETs.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117019725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380645
K. Turki, G. Picoli, J. Viallet
The I-V characteristics were investigated on both long liquid encapsulated Czochralski (LEC) and short epitaxial semi-insulating (SI) InP:Fe samples. These characteristics show a linear regime at low voltages followed for higher voltages by a nonlinear one and a current breakdown. This has been widely explained by the single injection theory of Lampert and Mark (1970). The authors show that these characteristics are more complicated than previously recognized and exhibit three further features: (1) The nonlinear behavior occurs at a field of 10 kV/cm independent of the temperature, the nature of the contacts, and the sample thickness. (2) A current transient occurs for LEC long samples from this critical field affecting the I-V characteristics. (3) A S-type negative differential conductivity takes place at a higher field. This behavior is explained by a field-enhancement of the deep-level capture cross section and impact-ionization of deep levels.<>
{"title":"Nonlinear behavior of InP:Fe under high electric field","authors":"K. Turki, G. Picoli, J. Viallet","doi":"10.1109/ICIPRM.1993.380645","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380645","url":null,"abstract":"The I-V characteristics were investigated on both long liquid encapsulated Czochralski (LEC) and short epitaxial semi-insulating (SI) InP:Fe samples. These characteristics show a linear regime at low voltages followed for higher voltages by a nonlinear one and a current breakdown. This has been widely explained by the single injection theory of Lampert and Mark (1970). The authors show that these characteristics are more complicated than previously recognized and exhibit three further features: (1) The nonlinear behavior occurs at a field of 10 kV/cm independent of the temperature, the nature of the contacts, and the sample thickness. (2) A current transient occurs for LEC long samples from this critical field affecting the I-V characteristics. (3) A S-type negative differential conductivity takes place at a higher field. This behavior is explained by a field-enhancement of the deep-level capture cross section and impact-ionization of deep levels.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117082510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380638
R. Tyagi, T. Chow, J. Borrego, K.A. Pisarczyk
The development of conventional InP MESFET technology is strongly hampered by the low barrier height (0.3-0.4eV) obtained in InP, due to surface Fermi level pinning, and consequent high reverse leakage currents. As a result, several techniques are being applied to increase the Schottky barrier height on n-InP. The authors present a technique for obtaining improved Al/InP Schottky barriers on n-InP by using coimplantation of Be/P. Schottky barrier heights as high as 0.64 eV have been obtained, along with an ideality factor very close to unity. The reverse leakage current density is also reduced by almost four orders of magnitude.<>
{"title":"Improved Al/InP Schottky barriers by coimplantation of Be/P","authors":"R. Tyagi, T. Chow, J. Borrego, K.A. Pisarczyk","doi":"10.1109/ICIPRM.1993.380638","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380638","url":null,"abstract":"The development of conventional InP MESFET technology is strongly hampered by the low barrier height (0.3-0.4eV) obtained in InP, due to surface Fermi level pinning, and consequent high reverse leakage currents. As a result, several techniques are being applied to increase the Schottky barrier height on n-InP. The authors present a technique for obtaining improved Al/InP Schottky barriers on n-InP by using coimplantation of Be/P. Schottky barrier heights as high as 0.64 eV have been obtained, along with an ideality factor very close to unity. The reverse leakage current density is also reduced by almost four orders of magnitude.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126130666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380669
M. Vilela, A. Freundlich, A. Bensaoula, N. Medelci
High performance In/sub 0.47/Ga/sub 0.53/As tunnel junctions were successfully realized using chemical beam epitaxy on InP, GaAs and GaAs/Si substrates. The achievement of high performance tunnel junctions, besides extremely high hole and electron concentrations requires low interdiffusion of dopant species in the narrow space-charge region of the junction during the device growth procedure. Therefore a relatively low temperature growth process and a good control of interface properties is required. Using chemical beam epitaxy (CBE) high quality InP and InGaAs can be grown at temperatures substantially lower than those used in more conventional liquid phase epitaxy and metalorganic vapor phase epitaxy techniques rendering CBE specially attractive for such tunnel junction fabrication. The peak currents obtained on samples grown on InP substrates are the highest ever reported for such tunnel junctions. These results demonstrate that CBE is perfectly suited for fabrication of InP/InGaAs tandem solar cells.<>
{"title":"High performance In/sub 0.47/Ga/sub 0.53/As tunnel junctions grown by chemical beam epitaxy on InP and GaAs and Si substrates","authors":"M. Vilela, A. Freundlich, A. Bensaoula, N. Medelci","doi":"10.1109/ICIPRM.1993.380669","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380669","url":null,"abstract":"High performance In/sub 0.47/Ga/sub 0.53/As tunnel junctions were successfully realized using chemical beam epitaxy on InP, GaAs and GaAs/Si substrates. The achievement of high performance tunnel junctions, besides extremely high hole and electron concentrations requires low interdiffusion of dopant species in the narrow space-charge region of the junction during the device growth procedure. Therefore a relatively low temperature growth process and a good control of interface properties is required. Using chemical beam epitaxy (CBE) high quality InP and InGaAs can be grown at temperatures substantially lower than those used in more conventional liquid phase epitaxy and metalorganic vapor phase epitaxy techniques rendering CBE specially attractive for such tunnel junction fabrication. The peak currents obtained on samples grown on InP substrates are the highest ever reported for such tunnel junctions. These results demonstrate that CBE is perfectly suited for fabrication of InP/InGaAs tandem solar cells.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129715760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380629
P. Roblin, R. Potter, A. Fathimulla
The authors present simulation results demonstrating the impact of 3D scattering on the I-V characteristics of an InP-based resonant tunneling diode (RTD). Of particular interest is interface-roughness scattering at the InGaAs/AlAs and InGaAs/InAs interfaces. Interface-roughness scattering is found to be the dominant scattering process. For the circuit application considered, interface-roughness scattering is shown to provide an important contribution for shaping the device characteristic.<>
{"title":"Interface roughness scattering in AlAs/InGaAs/AlAs RTD with InAs subwell","authors":"P. Roblin, R. Potter, A. Fathimulla","doi":"10.1109/ICIPRM.1993.380629","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380629","url":null,"abstract":"The authors present simulation results demonstrating the impact of 3D scattering on the I-V characteristics of an InP-based resonant tunneling diode (RTD). Of particular interest is interface-roughness scattering at the InGaAs/AlAs and InGaAs/InAs interfaces. Interface-roughness scattering is found to be the dominant scattering process. For the circuit application considered, interface-roughness scattering is shown to provide an important contribution for shaping the device characteristic.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132950671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380596
M. Chertouk, A. Boudiaf, A. Chovet, R. Azoulay, A. Clei
GaAs/InP FETs on InP appear to be promising for the realization of optoelectronic integrated circuits (OEICs) for low and high bit-rate optical communication. However, there are two fundamental problems, the 3.9% lattice mismatch and 210/sup -6///spl deg/C difference in thermal expansion coefficients leading to the formation of a high density of dislocations and to a high level of tensile stress in the GaAs layer. For possible applications it is mandatory to investigate the effect of this mismatch through the buffer thickness on the DC and microwave performance of GaAs/InP MESFETs. An improvement in the DC and microwave performance of GaAs MESFETs on InP substrate has been observed when increasing the undoped GaAs buffer thickness. For a 3 /spl mu/m thick GaAs buffer, the 1 /spl mu/m gate MESFET has a maximum extrinsic transconductance larger than 230mS/mm, a current gain cut-off frequency of 15 GHz, a maximum frequency of oscillation of 28 GHz, a minimum noise figure of 1 dB at 4 GHz and a Hooge parameter of 2.5 10/sup -5/. Such results clearly indicate the potential of GaAs/InP MESFETs for application to OEICs.<>
{"title":"Optimization of the buffer thickness for high performance 1 /spl mu/m gate GaAs MESFETs on InP substrate for OEICs","authors":"M. Chertouk, A. Boudiaf, A. Chovet, R. Azoulay, A. Clei","doi":"10.1109/ICIPRM.1993.380596","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380596","url":null,"abstract":"GaAs/InP FETs on InP appear to be promising for the realization of optoelectronic integrated circuits (OEICs) for low and high bit-rate optical communication. However, there are two fundamental problems, the 3.9% lattice mismatch and 210/sup -6///spl deg/C difference in thermal expansion coefficients leading to the formation of a high density of dislocations and to a high level of tensile stress in the GaAs layer. For possible applications it is mandatory to investigate the effect of this mismatch through the buffer thickness on the DC and microwave performance of GaAs/InP MESFETs. An improvement in the DC and microwave performance of GaAs MESFETs on InP substrate has been observed when increasing the undoped GaAs buffer thickness. For a 3 /spl mu/m thick GaAs buffer, the 1 /spl mu/m gate MESFET has a maximum extrinsic transconductance larger than 230mS/mm, a current gain cut-off frequency of 15 GHz, a maximum frequency of oscillation of 28 GHz, a minimum noise figure of 1 dB at 4 GHz and a Hooge parameter of 2.5 10/sup -5/. Such results clearly indicate the potential of GaAs/InP MESFETs for application to OEICs.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131329231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-04-19DOI: 10.1109/ICIPRM.1993.380583
Y. Kwon, D. Pavlidis, T. Brock, G. Ng, K. Tan, J. Velebir, D. Streit
Lattice-matched and strained (pseudomorphic) InAlAs/InGaAs high electron mobility transistors (HEMTs) are recognized as the most suitable components for operation at millimeter-waves. Pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (x>0.53) HEMTs are particularly promising candidates for high-frequency and low-noise applications due to the superior material properties of the strained InGaAs channel. The InGaAs channel with excess indium provides improved low-field mobility characteristics, better carrier confinement and higher peak velocity due to the larger /spl Gamma/-to-L valley separation, compared with lattice-matched channels. The authors address such pseudomorphic designs using double heterostructure (DH) HEMT designs. They demonstrate the possibility of combining pseudomorphic rather than lattice-matched channels with a double heterostructure design to optimize the frequency and current drive characteristics of DH-HEMTs. The DC and microwave characteristics of the fabricated submicron DH-HEMTs are presented and compared with single heterostructure (SH)-devices processed at the same time. Improved f/sub max/ and higher current density have been obtained with the pseudomorphic DH-HEMTs compared to SH-HEMTs.<>
{"title":"Submicron pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As HEMTs with high cut-off and current-drive capability","authors":"Y. Kwon, D. Pavlidis, T. Brock, G. Ng, K. Tan, J. Velebir, D. Streit","doi":"10.1109/ICIPRM.1993.380583","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380583","url":null,"abstract":"Lattice-matched and strained (pseudomorphic) InAlAs/InGaAs high electron mobility transistors (HEMTs) are recognized as the most suitable components for operation at millimeter-waves. Pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (x>0.53) HEMTs are particularly promising candidates for high-frequency and low-noise applications due to the superior material properties of the strained InGaAs channel. The InGaAs channel with excess indium provides improved low-field mobility characteristics, better carrier confinement and higher peak velocity due to the larger /spl Gamma/-to-L valley separation, compared with lattice-matched channels. The authors address such pseudomorphic designs using double heterostructure (DH) HEMT designs. They demonstrate the possibility of combining pseudomorphic rather than lattice-matched channels with a double heterostructure design to optimize the frequency and current drive characteristics of DH-HEMTs. The DC and microwave characteristics of the fabricated submicron DH-HEMTs are presented and compared with single heterostructure (SH)-devices processed at the same time. Improved f/sub max/ and higher current density have been obtained with the pseudomorphic DH-HEMTs compared to SH-HEMTs.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128834598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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