Pub Date : 2002-04-08DOI: 10.1109/ICMTS.2002.1193181
S. Mecking, A. Korbel, E. Paparisto, U. Langmann
This paper presents a simple and efficient parameter extraction methodology, based on time-domain large-signal measurements of two ring oscillators as test structures. This experimentally confirmed technique is a new tool for determining the parasitic gate resistance R/sub G/ and for a fine tuning of the fringing capacitance C/sub F/ of MOS transistors in one step. Thus CMOS switching speed can be predicted more accurately, compared to conventional parameter tuning methodologies and the expenditure of SPICE parameter extractions can be reduced.
{"title":"A combined R/sub G//C/sub F/ large-signal extraction methodology to improve CMOS SPICE-parameter precision","authors":"S. Mecking, A. Korbel, E. Paparisto, U. Langmann","doi":"10.1109/ICMTS.2002.1193181","DOIUrl":"https://doi.org/10.1109/ICMTS.2002.1193181","url":null,"abstract":"This paper presents a simple and efficient parameter extraction methodology, based on time-domain large-signal measurements of two ring oscillators as test structures. This experimentally confirmed technique is a new tool for determining the parasitic gate resistance R/sub G/ and for a fine tuning of the fringing capacitance C/sub F/ of MOS transistors in one step. Thus CMOS switching speed can be predicted more accurately, compared to conventional parameter tuning methodologies and the expenditure of SPICE parameter extractions can be reduced.","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127803851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-04-08DOI: 10.1109/ICMTS.2002.1193161
B. A. am Ende, M. Cresswell, R. Allen, T. Headley, W. Guthrie, L. W. Linholm, E. H. Bogardus, C. E. Murabito
NIST, Sandia National Laboratories, and International SEMATECH are developing a new type of linewidth standard for calibrating Critical Dimension (CD) metrology instruments for lithographic process control. The standard reference feature is the bridge of an electrical linewidth test structure that is patterned in a monocrystalline silicon film. Phase-contrast images of the cross sections of a sample of the bridge features on each wafer, produced by High-Resolution Transmission-Electron Microscopy (HRTEM), are used to trace the measured electrical linewidths of the standard reference feature to the lattice constant of silicon. This paper describes the automated analysis of the phase-contrast images that was developed in order to minimize the cost and uncertainty of the linewidths of the standards.
{"title":"Measurement of the linewidth of electrical test-structure reference features by automated phase-contrast image analysis","authors":"B. A. am Ende, M. Cresswell, R. Allen, T. Headley, W. Guthrie, L. W. Linholm, E. H. Bogardus, C. E. Murabito","doi":"10.1109/ICMTS.2002.1193161","DOIUrl":"https://doi.org/10.1109/ICMTS.2002.1193161","url":null,"abstract":"NIST, Sandia National Laboratories, and International SEMATECH are developing a new type of linewidth standard for calibrating Critical Dimension (CD) metrology instruments for lithographic process control. The standard reference feature is the bridge of an electrical linewidth test structure that is patterned in a monocrystalline silicon film. Phase-contrast images of the cross sections of a sample of the bridge features on each wafer, produced by High-Resolution Transmission-Electron Microscopy (HRTEM), are used to trace the measured electrical linewidths of the standard reference feature to the lattice constant of silicon. This paper describes the automated analysis of the phase-contrast images that was developed in order to minimize the cost and uncertainty of the linewidths of the standards.","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130445023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-04-08DOI: 10.1109/ICMTS.2002.1193178
S. Odanaka, K. Yamashita, N. Koike, K. Tatsuuma
Hot-carrier-induced photoemission of subquarter-micron CMOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm, for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzman distribution; exp(-h/spl nu//kT/sub e/).
{"title":"A test structure for spectrum analysis of hot-carrier-induced photoemission from subquarter-micron CMOSFETs","authors":"S. Odanaka, K. Yamashita, N. Koike, K. Tatsuuma","doi":"10.1109/ICMTS.2002.1193178","DOIUrl":"https://doi.org/10.1109/ICMTS.2002.1193178","url":null,"abstract":"Hot-carrier-induced photoemission of subquarter-micron CMOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm, for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzman distribution; exp(-h/spl nu//kT/sub e/).","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121489462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ICMTS.2002.1193196
H. Barnaby, peixiong zhao, K. Galloway, D. Ball, R. Pease, P. Fouillat
Structures integrated onto BiCMOS test chips were specially designed to characterize the complex mechanisms related to radiation effects in bipolar technologies. Bipolar devices from two commercial processes were modified to include independent gate terminals. Through the use of gate control, the effects of radiation-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative, experimentally verified, description of the non-linear relationship between the radiation defects and electrical response at both the device and circuit level.
{"title":"Test structures for analyzing radiation effects in bipolar technologies","authors":"H. Barnaby, peixiong zhao, K. Galloway, D. Ball, R. Pease, P. Fouillat","doi":"10.1109/ICMTS.2002.1193196","DOIUrl":"https://doi.org/10.1109/ICMTS.2002.1193196","url":null,"abstract":"Structures integrated onto BiCMOS test chips were specially designed to characterize the complex mechanisms related to radiation effects in bipolar technologies. Bipolar devices from two commercial processes were modified to include independent gate terminals. Through the use of gate control, the effects of radiation-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative, experimentally verified, description of the non-linear relationship between the radiation defects and electrical response at both the device and circuit level.","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131659721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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