Pub Date : 2025-11-27eCollection Date: 2026-01-01DOI: 10.1093/nsr/nwaf535
Shiyi Chen, Xiaogang Deng, Cunbiao Lee
This review summarizes recent advances in the origin of turbulence. The soliton-like coherent structure (SCS) has been identified not only as a common structure in natural and K-type transitions, but also as a fundamental structure in N-type, O-type and bypass-type transitions, which dominate turbulence generation. It has also been confirmed as an essential structure in turbulent boundary layers. Notably, the SCS has been successively observed in pipe flows, stratified flows, mixing layers, jet flows, falling films and wakes. These findings collectively indicate that the SCS serves as a fundamental structure in shear flows, providing significant insights into the origin of shear turbulence.
{"title":"Soliton-like coherent structures: a key to opening the door to turbulence.","authors":"Shiyi Chen, Xiaogang Deng, Cunbiao Lee","doi":"10.1093/nsr/nwaf535","DOIUrl":"10.1093/nsr/nwaf535","url":null,"abstract":"<p><p>This review summarizes recent advances in the origin of turbulence. The soliton-like coherent structure (SCS) has been identified not only as a common structure in natural and K-type transitions, but also as a fundamental structure in N-type, O-type and bypass-type transitions, which dominate turbulence generation. It has also been confirmed as an essential structure in turbulent boundary layers. Notably, the SCS has been successively observed in pipe flows, stratified flows, mixing layers, jet flows, falling films and wakes. These findings collectively indicate that the SCS serves as a fundamental structure in shear flows, providing significant insights into the origin of shear turbulence.</p>","PeriodicalId":18842,"journal":{"name":"National Science Review","volume":"13 2","pages":"nwaf535"},"PeriodicalIF":17.1,"publicationDate":"2025-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12831032/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146053189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ferroelectric-based artificial synapses have emerged as fascinating candidates for the development of intelligent sensor-memory-computing (SMC) systems, thanks to the remarkable nonvolatile properties and abundant polarization states that ferroelectrics offer. However, simultaneously modulating the ferroelectric synapse through optical and electrical excitation is challenging. Herein, we propose a high-throughput strategy for designing optoelectronic co-modulated ferroelectric synapses. This strategy involves designing a ferroelectric field-effect transistor (FeFET) based on the Pb(Zr0.2Ti0.8)O3/InGaZnO (IGZO) heterostructure, which includes an IGZO homostructure, followed by high-throughput screening of IGZO materials that enable both optical and electrical modulation. The transistors with optoelectronic co-modulated synaptic functionalities are subsequently screened from a set of high-throughput FeFETs. Based on these optoelectronic co-modulated ferroelectric synapses, an artificial SMC system that can simultaneously sense and recognize images is constructed, achieving a high recognition accuracy of 88.42% and this SMC system simultaneously exhibits the advantages of reduced hardware overheads, fast speed and low power consumption. Our work introduces a novel strategy for designing multifunctional artificial synapses from materials to devices, which may represent a new paradigm in the development of high-performance SMC systems.
{"title":"High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices.","authors":"Gaokuo Zhong, Jiaqi Yan, Mingkai Tang, Haoyue Deng, Yangchun Tan, Xiangli Zhong, Changjian Li, Zhen Fan, Jinbin Wang, Jiangyu Li","doi":"10.1093/nsr/nwaf530","DOIUrl":"https://doi.org/10.1093/nsr/nwaf530","url":null,"abstract":"<p><p>Ferroelectric-based artificial synapses have emerged as fascinating candidates for the development of intelligent sensor-memory-computing (SMC) systems, thanks to the remarkable nonvolatile properties and abundant polarization states that ferroelectrics offer. However, simultaneously modulating the ferroelectric synapse through optical and electrical excitation is challenging. Herein, we propose a high-throughput strategy for designing optoelectronic co-modulated ferroelectric synapses. This strategy involves designing a ferroelectric field-effect transistor (FeFET) based on the Pb(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub>/InGaZnO (IGZO) heterostructure, which includes an IGZO homostructure, followed by high-throughput screening of IGZO materials that enable both optical and electrical modulation. The transistors with optoelectronic co-modulated synaptic functionalities are subsequently screened from a set of high-throughput FeFETs. Based on these optoelectronic co-modulated ferroelectric synapses, an artificial SMC system that can simultaneously sense and recognize images is constructed, achieving a high recognition accuracy of 88.42% and this SMC system simultaneously exhibits the advantages of reduced hardware overheads, fast speed and low power consumption. Our work introduces a novel strategy for designing multifunctional artificial synapses from materials to devices, which may represent a new paradigm in the development of high-performance SMC systems.</p>","PeriodicalId":18842,"journal":{"name":"National Science Review","volume":"13 2","pages":"nwaf530"},"PeriodicalIF":17.1,"publicationDate":"2025-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12839522/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146093560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shortwave infrared (SWIR) photodetectors are essential for industrial, medical and security applications, but their adoption is limited by reliance on costly epitaxial semiconductors. Solution-processed organic and colloidal quantum dot (CQD) semiconductors offer a promising alternative, although their devices often suffer from high dark-current under reverse bias. We demonstrate an approach to precise work function modulation in SWIR photodetectors using conjugated polyelectrolytes with mixed counterions. This strategy achieves continuous work function tuning and interfacial defect passivation, significantly reducing dark current in solution-processed photodetectors. The optimized CQD photodetectors exhibit a dark-current density two orders of magnitude lower than that of conventional devices at -0.1 V bias (6.7 × 10-8 A cm-2), achieving a linear dynamic range of 130 dB, specific detectivity of 4.3 × 1012 Jones, and cutoff frequency of 107 kHz under 1550 nm illumination. Integrated with a complementary metal-oxide-semiconductor read-out integrated circuit, the resulting SWIR imager demonstrates high-resolution performance (1280 × 1024 pixels), providing a viable alternative to InGaAs-based imagers.
{"title":"Hybrid ionic-electronic semiconductors for interface engineering of ultra-low-dark-current solution-processed SWIR photodetectors.","authors":"Yunhao Cao, Xiye Yang, Yazhong Wang, Jingwen Chen, Haoran Tang, Chunchen Liu, Kai Zhang, Sheng Dong, Yong Cao, Fei Huang","doi":"10.1093/nsr/nwaf531","DOIUrl":"10.1093/nsr/nwaf531","url":null,"abstract":"<p><p>Shortwave infrared (SWIR) photodetectors are essential for industrial, medical and security applications, but their adoption is limited by reliance on costly epitaxial semiconductors. Solution-processed organic and colloidal quantum dot (CQD) semiconductors offer a promising alternative, although their devices often suffer from high dark-current under reverse bias. We demonstrate an approach to precise work function modulation in SWIR photodetectors using conjugated polyelectrolytes with mixed counterions. This strategy achieves continuous work function tuning and interfacial defect passivation, significantly reducing dark current in solution-processed photodetectors. The optimized CQD photodetectors exhibit a dark-current density two orders of magnitude lower than that of conventional devices at -0.1 V bias (6.7 × 10<sup>-8</sup> A cm<sup>-2</sup>), achieving a linear dynamic range of 130 dB, specific detectivity of 4.3 × 10<sup>12</sup> Jones, and cutoff frequency of 107 kHz under 1550 nm illumination. Integrated with a complementary metal-oxide-semiconductor read-out integrated circuit, the resulting SWIR imager demonstrates high-resolution performance (1280 × 1024 pixels), providing a viable alternative to InGaAs-based imagers.</p>","PeriodicalId":18842,"journal":{"name":"National Science Review","volume":"13 2","pages":"nwaf531"},"PeriodicalIF":17.1,"publicationDate":"2025-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12831028/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146053184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-25eCollection Date: 2026-02-01DOI: 10.1093/nsr/nwaf533
Hepeng Jia
Heavy investments, novel institutions and intra-regional ties are fueling the scientific rise of the Guangdong-Hong Kong-Macao Greater Bay Area.
大量的投资、新颖的制度和区域内的联系正在推动粤港澳大湾区的科学崛起。
{"title":"TheGreater Bay Area: a new science powerhouse.","authors":"Hepeng Jia","doi":"10.1093/nsr/nwaf533","DOIUrl":"https://doi.org/10.1093/nsr/nwaf533","url":null,"abstract":"<p><p>Heavy investments, novel institutions and intra-regional ties are fueling the scientific rise of the Guangdong-Hong Kong-Macao Greater Bay Area.</p>","PeriodicalId":18842,"journal":{"name":"National Science Review","volume":"13 3","pages":"nwaf533"},"PeriodicalIF":17.1,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12875111/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146142993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-22eCollection Date: 2026-01-01DOI: 10.1093/nsr/nwaf528
Runzhang Xu, Yifan Gao, Junwei Liu
The crystal-symmetry-paired spin-momentum locking (CSML), arising from the intrinsic crystal symmetry that connects different magnetic sublattices in altermagnets, enables many exotic spintronics properties, such as unconventional piezomagnetism and non-collinear spin currents. However, the shortage of monolayer altermagnets restricts further exploration of dimensionally confined phenomena and applications of nanostructured devices. Here, we propose general chemical design principles inspired by sublattice symmetry of the layered altermagnet V[Formula: see text](Se,Te)[Formula: see text]O through symmetry-preserving structural modification and valence-adaptive chemical substitutions. In total, we construct 2600 candidates across four structural frameworks, M[Formula: see text]A[Formula: see text]B[Formula: see text] and their Janus derivatives. High-throughput calculations identify 612 potential altermagnets with Néel-ordered ground states, among which 79 exhibit CSML Dirac cones that enable spin-polarized ultra-fast transport. These materials also feature different ground-state magnetic orderings and demonstrate diverse electronic behaviors, ranging from semiconductors and metals to half-metals and Dirac semimetals. This work not only reveals abundant monolayer altermagnets, but also establishes a rational principle for their design, opening the gates to the exploration of confined magnetism and spintronics in atomically thin systems.
{"title":"Chemical design of monolayer altermagnets.","authors":"Runzhang Xu, Yifan Gao, Junwei Liu","doi":"10.1093/nsr/nwaf528","DOIUrl":"10.1093/nsr/nwaf528","url":null,"abstract":"<p><p>The crystal-symmetry-paired spin-momentum locking (CSML), arising from the intrinsic crystal symmetry that connects different magnetic sublattices in altermagnets, enables many exotic spintronics properties, such as unconventional piezomagnetism and non-collinear spin currents. However, the shortage of monolayer altermagnets restricts further exploration of dimensionally confined phenomena and applications of nanostructured devices. Here, we propose general chemical design principles inspired by sublattice symmetry of the layered altermagnet V[Formula: see text](Se,Te)[Formula: see text]O through symmetry-preserving structural modification and valence-adaptive chemical substitutions. In total, we construct 2600 candidates across four structural frameworks, M[Formula: see text]A[Formula: see text]B[Formula: see text] and their Janus derivatives. High-throughput calculations identify 612 potential altermagnets with Néel-ordered ground states, among which 79 exhibit CSML Dirac cones that enable spin-polarized ultra-fast transport. These materials also feature different ground-state magnetic orderings and demonstrate diverse electronic behaviors, ranging from semiconductors and metals to half-metals and Dirac semimetals. This work not only reveals abundant monolayer altermagnets, but also establishes a rational principle for their design, opening the gates to the exploration of confined magnetism and spintronics in atomically thin systems.</p>","PeriodicalId":18842,"journal":{"name":"National Science Review","volume":"13 2","pages":"nwaf528"},"PeriodicalIF":17.1,"publicationDate":"2025-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12831033/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146053254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Simultaneously attaining high energy density and long cycling life remains a critical challenge for aluminum-organic batteries (AOBs) due to low operating voltage, limited active sites and unstable coordination structure of organic cathodes. Herein, we design a multisite super-crosslinked sulfur-heterocyclic polymer cathode. The electronegative sulfur heterocycles can significantly weaken the electron-donating effect, promoting the operating voltage to 2.0 V (average ∼1.7 V), which is a breakthrough for AOBs (<1.5 V for almost all AOBs). Tailoring the linking patterns of polymers to increase active sites can maximize redox activity to 12-electron-transfer, contributing to a high capacity of 150 mAh g-1. The designed organic cathode achieves 255 Wh kg-1 energy density, breaking the upper limit of conventional graphite cathodes (∼200 Wh kg-1). Notably, the weak coordination interaction between C‒S+‒C radicals and AlCl4- carriers ensures structural stability, enabling the battery's excellent low-temperature durability, with almost 100% capacity retention after 12 000 cycles at -20°C.
{"title":"A multisite super-crosslinked sulfur-heterocyclic polymer cathode for high-voltage and low-temperature aluminum-organic batteries.","authors":"Yuxi Guo, Ke Guo, Wei Wang, Zheng Huang, Yaxue Wang, Mingyong Wang, Yanli Zhu, Shuqiang Jiao","doi":"10.1093/nsr/nwaf526","DOIUrl":"10.1093/nsr/nwaf526","url":null,"abstract":"<p><p>Simultaneously attaining high energy density and long cycling life remains a critical challenge for aluminum-organic batteries (AOBs) due to low operating voltage, limited active sites and unstable coordination structure of organic cathodes. Herein, we design a multisite super-crosslinked sulfur-heterocyclic polymer cathode. The electronegative sulfur heterocycles can significantly weaken the electron-donating effect, promoting the operating voltage to 2.0 V (average ∼1.7 V), which is a breakthrough for AOBs (<1.5 V for almost all AOBs). Tailoring the linking patterns of polymers to increase active sites can maximize redox activity to 12-electron-transfer, contributing to a high capacity of 150 mAh g<sup>-1</sup>. The designed organic cathode achieves 255 Wh kg<sup>-1</sup> energy density, breaking the upper limit of conventional graphite cathodes (∼200 Wh kg<sup>-1</sup>). Notably, the weak coordination interaction between C‒S<sup>+</sup>‒C radicals and AlCl<sub>4</sub> <sup>-</sup> carriers ensures structural stability, enabling the battery's excellent low-temperature durability, with almost 100% capacity retention after 12 000 cycles at -20°C.</p>","PeriodicalId":18842,"journal":{"name":"National Science Review","volume":"13 1","pages":"nwaf526"},"PeriodicalIF":17.1,"publicationDate":"2025-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12796798/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145970879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
All-solid-state lithium-sulfur batteries (ASSLSBs) promise high theoretical energy density and inherent safety, but their full capacity delivery is seriously hindered by incomplete sulfur conversion. Here, we propose to exploit deep conversion of S8 to Li2S via intermediate Li2S2 by using tandem catalysis for high-capacity ASSLSBs, which we demonstrate by cobalt single-atom catalysts anchored on a conductive MXene substrate. In contrast to commonly believed one-step S8 reduction to Li2S in ASSLSBs, our results show that tandem catalysis achieves stepwise S8 reduction to Li2S via Li2S2, during which atomically dispersed Co sites break S-S bonds and the polar MXene surface facilitates Li+ diffusion, significantly reducing the sulfur conversion energy barriers. Consequently, the Co@MX-based ASSLSB reserves a high capacity of 1329 mAh gS-1 after 2000 cycles at 2.8 mA cm-2 at room temperature. This work demonstrates the promise of tandem catalysis for tailoring an all-solid-state sulfur conversion path and exploiting deep sulfur conversion capacity for high-performance ASSLSBs.
全固态锂硫电池(ASSLSBs)具有较高的理论能量密度和固有安全性,但硫转化不完全严重阻碍了其满负荷传输。在这里,我们提出利用串联催化高容量asslbs,利用中间体Li2S2将S8深度转化为Li2S,我们通过锚定在导电MXene衬底上的钴单原子催化剂来证明这一点。与ASSLSBs中通常认为的S8一步还原为Li2S不同,我们的研究结果表明,串联催化通过Li2S2实现了S8逐步还原为Li2S,在此过程中,原子分散的Co位点破坏了S-S键,极性MXene表面促进了Li+的扩散,显著降低了硫转化能垒。因此,Co@MX-based ASSLSB在室温下2.8 mA cm-2循环2000次后保留1329 mAh gS -1的高容量。这项工作证明了串联催化在定制全固态硫转化路径和开发高性能ASSLSBs深层硫转化能力方面的前景。
{"title":"Exploiting deep sulfur conversion by tandem catalysis for all-solid-state lithium-sulfur batteries.","authors":"Huilin Ge, Yu Long, Dulin Huang, Chuannan Geng, Tianran Yan, Haotian Yang, Maoxin Chen, Li Wang, Liang Zhang, Xu Zhang, Zhen Zhou, Chunpeng Yang, Quan-Hong Yang","doi":"10.1093/nsr/nwaf525","DOIUrl":"10.1093/nsr/nwaf525","url":null,"abstract":"<p><p>All-solid-state lithium-sulfur batteries (ASSLSBs) promise high theoretical energy density and inherent safety, but their full capacity delivery is seriously hindered by incomplete sulfur conversion. Here, we propose to exploit deep conversion of S<sub>8</sub> to Li<sub>2</sub>S via intermediate Li<sub>2</sub>S<sub>2</sub> by using tandem catalysis for high-capacity ASSLSBs, which we demonstrate by cobalt single-atom catalysts anchored on a conductive MXene substrate. In contrast to commonly believed one-step S<sub>8</sub> reduction to Li<sub>2</sub>S in ASSLSBs, our results show that tandem catalysis achieves stepwise S<sub>8</sub> reduction to Li<sub>2</sub>S via Li<sub>2</sub>S<sub>2</sub>, during which atomically dispersed Co sites break S-S bonds and the polar MXene surface facilitates Li<sup>+</sup> diffusion, significantly reducing the sulfur conversion energy barriers. Consequently, the Co@MX-based ASSLSB reserves a high capacity of 1329 mAh g<sub>S</sub> <sup>-1</sup> after 2000 cycles at 2.8 mA cm<sup>-2</sup> at room temperature. This work demonstrates the promise of tandem catalysis for tailoring an all-solid-state sulfur conversion path and exploiting deep sulfur conversion capacity for high-performance ASSLSBs.</p>","PeriodicalId":18842,"journal":{"name":"National Science Review","volume":"13 1","pages":"nwaf525"},"PeriodicalIF":17.1,"publicationDate":"2025-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12796810/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145971006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}