Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720985
Yong Hee Kim, N. S. Baek, G. Kim, Ah-young Kim, Young Hwan Han, Sang-Don Jung
Electrochemical deposition of gold nanoparticles (Au NPs) on the gold multi-electrode array (MEA) fabricated with bi-layer lift-off resist sputter-deposition technique was performed. Electrochemical deposition was performed by potentiostatic and cyclic voltammetry method. The surface of Au NP-modified electrode showed various morphologies with applied voltage and the concentration of HAuCl4 solution. The Au NP-modified electrode was characterized by electrochemical impedance spectroscopy and cyclic voltammogram. The performance of Au NP-modified MEA was also tested by neuronal signal recording. The Au NP-modified MEA exhibited lower baseline noises and can record neuronal spike signals longer than the bare Au MEA.
{"title":"Fabrication of gold multi-electrode array with bi-layer lift-off resist technique and surface modification with gold nanoparticles by electrochemical deposition","authors":"Yong Hee Kim, N. S. Baek, G. Kim, Ah-young Kim, Young Hwan Han, Sang-Don Jung","doi":"10.1109/NANO.2013.6720985","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720985","url":null,"abstract":"Electrochemical deposition of gold nanoparticles (Au NPs) on the gold multi-electrode array (MEA) fabricated with bi-layer lift-off resist sputter-deposition technique was performed. Electrochemical deposition was performed by potentiostatic and cyclic voltammetry method. The surface of Au NP-modified electrode showed various morphologies with applied voltage and the concentration of HAuCl4 solution. The Au NP-modified electrode was characterized by electrochemical impedance spectroscopy and cyclic voltammogram. The performance of Au NP-modified MEA was also tested by neuronal signal recording. The Au NP-modified MEA exhibited lower baseline noises and can record neuronal spike signals longer than the bare Au MEA.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"13 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116818760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720918
Kai Xu, Yongfeng Li, Ting Liu, Fan Yang, Chunming Xu, Jinsen Gao
Single-walled carbon nanotubes (SWNTs) have been synthesized by an arc discharge method using asphalt and petroleum coke as carbon source. The morphology and structure of SWNT products synthesized with Fe as catalyst were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy and energy dispersive X-ray spectroscopy (EDX). Our findings indicate that asphalt and petroleum coke are suitable industrial carbon source for the growth of single-walled carbon nanotubes.
{"title":"High-quality single-walled carbon nanotubes synthesized from asphalt and petroleum coke","authors":"Kai Xu, Yongfeng Li, Ting Liu, Fan Yang, Chunming Xu, Jinsen Gao","doi":"10.1109/NANO.2013.6720918","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720918","url":null,"abstract":"Single-walled carbon nanotubes (SWNTs) have been synthesized by an arc discharge method using asphalt and petroleum coke as carbon source. The morphology and structure of SWNT products synthesized with Fe as catalyst were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy and energy dispersive X-ray spectroscopy (EDX). Our findings indicate that asphalt and petroleum coke are suitable industrial carbon source for the growth of single-walled carbon nanotubes.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115803091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720959
M. Lee, C. Hsieh, V. Su, Y. You, Po-Hsun Chen, Hung-Chou Lin, Han-Bo Yang, C. Kuan
In this paper, we have fabricated two-dimensional (2-D) photonic crystals (PhCs) in order to obtain the high light extraction efficiency of InGaN-based Light Emitting Diodes (LEDs) and then we used front-side illuminated micro-photoluminescence (μ-PL) spectroscopy to measure the PL intensity of our InGaN-based LEDs, we also used back-side illuminated inverted microscopy to double check our PL intensity results. From the PL intensity results, not only a nearly threefold increase in the PL intensity was observed, but also that the light output intensity has the air duty cycle dependent characteristic was demonstrated.
{"title":"Utilizing two dimensional photonic crystals to study the relation between the air duty cycle and the light extraction efficiency of InGaN-based Light-Emitting Diodes","authors":"M. Lee, C. Hsieh, V. Su, Y. You, Po-Hsun Chen, Hung-Chou Lin, Han-Bo Yang, C. Kuan","doi":"10.1109/NANO.2013.6720959","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720959","url":null,"abstract":"In this paper, we have fabricated two-dimensional (2-D) photonic crystals (PhCs) in order to obtain the high light extraction efficiency of InGaN-based Light Emitting Diodes (LEDs) and then we used front-side illuminated micro-photoluminescence (μ-PL) spectroscopy to measure the PL intensity of our InGaN-based LEDs, we also used back-side illuminated inverted microscopy to double check our PL intensity results. From the PL intensity results, not only a nearly threefold increase in the PL intensity was observed, but also that the light output intensity has the air duty cycle dependent characteristic was demonstrated.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127173441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720799
J. Sone, K. Totsu
We aim to develop a process technology for constructing a carbon MEMS/NEMS device using HOPG without a high-temperature and high-energy process. An HOPG micro-sheet was prepared by exfoliation. In addition, the cantilevers and double-clamped beams were patterned using a photoresist. The HOPG micro-sheet was adhered using a tantalum layer. We succeeded in the fabrication of cantilevers and double-clamped beams by controlling the thickness and surface roughness of the HOPG micro-sheet. The measured first resonance frequency of the constructed cantilever was near graphite property. We plan to develop more precise nano-scale devices in the future.
{"title":"Feasibility study for development of a carbon-based MEMS/NEMS using HOPG and a MEMS fabrication process","authors":"J. Sone, K. Totsu","doi":"10.1109/NANO.2013.6720799","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720799","url":null,"abstract":"We aim to develop a process technology for constructing a carbon MEMS/NEMS device using HOPG without a high-temperature and high-energy process. An HOPG micro-sheet was prepared by exfoliation. In addition, the cantilevers and double-clamped beams were patterned using a photoresist. The HOPG micro-sheet was adhered using a tantalum layer. We succeeded in the fabrication of cantilevers and double-clamped beams by controlling the thickness and surface roughness of the HOPG micro-sheet. The measured first resonance frequency of the constructed cantilever was near graphite property. We plan to develop more precise nano-scale devices in the future.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"2009 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127335085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720805
Ke Chen, Jie Han, F. Lombardi
This paper proposes two non-volatile content addressable memory (CAM) cells using magnetic tunneling junction (MTJ) devices and nanoscaled CMOS transistors. The first novelty of the proposed non-volatile cells is that their operation and comparison outcome are voltage-based, hence requiring no current sensor. Two types of MTJ CAM cell are proposed; each of them utilizes two MTJs in a voltage divider arrangement. They differ in the number of required transistors, i.e. the first is a NOR type cell requiring six MOSFETs, while the second is a NAND type cell requiring five MOSFETs. Performance metrics (as related to search delay, power dissipation and static noise margin) as well as variation to process, voltage and temperature (PVT) are assessed by simulation at different feature sizes of the MOSFETs. The simulation results show that the proposed designs significantly improve in terms of search delay and power delay product (PDP) over existing non-volatile CAM memory cells utilizing MTJs.
{"title":"Design and evaluation of two MTJ-based content addressable non-volatile memory cells","authors":"Ke Chen, Jie Han, F. Lombardi","doi":"10.1109/NANO.2013.6720805","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720805","url":null,"abstract":"This paper proposes two non-volatile content addressable memory (CAM) cells using magnetic tunneling junction (MTJ) devices and nanoscaled CMOS transistors. The first novelty of the proposed non-volatile cells is that their operation and comparison outcome are voltage-based, hence requiring no current sensor. Two types of MTJ CAM cell are proposed; each of them utilizes two MTJs in a voltage divider arrangement. They differ in the number of required transistors, i.e. the first is a NOR type cell requiring six MOSFETs, while the second is a NAND type cell requiring five MOSFETs. Performance metrics (as related to search delay, power dissipation and static noise margin) as well as variation to process, voltage and temperature (PVT) are assessed by simulation at different feature sizes of the MOSFETs. The simulation results show that the proposed designs significantly improve in terms of search delay and power delay product (PDP) over existing non-volatile CAM memory cells utilizing MTJs.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127600726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720855
M. Shahini, J. Yeow
We present a new approach for electroporating cells through a CNT-featured microfluidic device. Micro-devices have become a promising approach for cell manipulation systems. Among cell manipulations techniques, cell electroporation requires relatively higher power to disrupt membrane of cells. This requirement opposes integration of cell electroporation with other on-chip functions to achieve a full-functional point-of-care testing machine. Here we present a new approach for electroporating cells with a microfluidic chip featured by CNT on one electrode. A new methodology for embedding aligned CNT on microchannel has been presented. In the CNT-embedded device, CHO cells are passed through a forest of aligned CNTs so that the enhanced electric field near the tip of CNTs get the cells electroporated. Calcein AM dye has been used to indicate electroporation. The results show that with an operational voltage as low as 3 V CHO cells are electroporated while the yield rate of electroporation is 72% higher compared to a no-CNT device. This achievement is considerable progress toward integration of cell electroporation with other low-voltage on-chip mechanisms.
{"title":"CNT-embedded electro-microchannel for cell electroporation","authors":"M. Shahini, J. Yeow","doi":"10.1109/NANO.2013.6720855","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720855","url":null,"abstract":"We present a new approach for electroporating cells through a CNT-featured microfluidic device. Micro-devices have become a promising approach for cell manipulation systems. Among cell manipulations techniques, cell electroporation requires relatively higher power to disrupt membrane of cells. This requirement opposes integration of cell electroporation with other on-chip functions to achieve a full-functional point-of-care testing machine. Here we present a new approach for electroporating cells with a microfluidic chip featured by CNT on one electrode. A new methodology for embedding aligned CNT on microchannel has been presented. In the CNT-embedded device, CHO cells are passed through a forest of aligned CNTs so that the enhanced electric field near the tip of CNTs get the cells electroporated. Calcein AM dye has been used to indicate electroporation. The results show that with an operational voltage as low as 3 V CHO cells are electroporated while the yield rate of electroporation is 72% higher compared to a no-CNT device. This achievement is considerable progress toward integration of cell electroporation with other low-voltage on-chip mechanisms.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125333528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6721030
Bo Jin, Jungsik Kim, Daegun Kang, M. Meyyappan, Jeong-Soo Lee
Electrical phase transition characteristics of self-assembled In2Se3 nanowire-based phase-change random access memory are presented. Through repeatable phase switching behavior in In2Se3 nanowire, we explored critical device parameters, such as set/reset programming voltage, extremely high resistance ratio (~107), power consumption, thermal resistance by Fourier's law, resistance drift coefficient by power law, etc. Size-dependent properties were observed: a systematic reduction in set/reset voltage and programming power, increase in thermal resistance of amorphous/crystalline phases and decrease in resistance drift coefficient at reset state, all scaling down the nanowire diameter. Such investigations provide an opportunity to develop highly-scalable and thermally efficient nonvolatile memory architecture in the future.
{"title":"Size-dependent characteristics of highly-scalable In2Se3 nanowire phase-change random access memory","authors":"Bo Jin, Jungsik Kim, Daegun Kang, M. Meyyappan, Jeong-Soo Lee","doi":"10.1109/NANO.2013.6721030","DOIUrl":"https://doi.org/10.1109/NANO.2013.6721030","url":null,"abstract":"Electrical phase transition characteristics of self-assembled In2Se3 nanowire-based phase-change random access memory are presented. Through repeatable phase switching behavior in In2Se3 nanowire, we explored critical device parameters, such as set/reset programming voltage, extremely high resistance ratio (~107), power consumption, thermal resistance by Fourier's law, resistance drift coefficient by power law, etc. Size-dependent properties were observed: a systematic reduction in set/reset voltage and programming power, increase in thermal resistance of amorphous/crystalline phases and decrease in resistance drift coefficient at reset state, all scaling down the nanowire diameter. Such investigations provide an opportunity to develop highly-scalable and thermally efficient nonvolatile memory architecture in the future.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"77 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121029931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6721047
L. Hao, J. Gallop, M. Stewart, K. Lees, Jie Chen
As micro- and nano-electromechanical systems (M/NEMS) enter more widely into sensing applications and precision nanometrology it is timely to consider the advantages to be gained from a excitation and readout system which may be tailored for a wide range of applications. In this paper we describe a system that we are developing which allows a combination of excitation and readout methods which impact on many potential applications.
{"title":"Multi-functional MEMS/NEMS for nanometrology applications","authors":"L. Hao, J. Gallop, M. Stewart, K. Lees, Jie Chen","doi":"10.1109/NANO.2013.6721047","DOIUrl":"https://doi.org/10.1109/NANO.2013.6721047","url":null,"abstract":"As micro- and nano-electromechanical systems (M/NEMS) enter more widely into sensing applications and precision nanometrology it is timely to consider the advantages to be gained from a excitation and readout system which may be tailored for a wide range of applications. In this paper we describe a system that we are developing which allows a combination of excitation and readout methods which impact on many potential applications.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127573786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720867
Jinal Shah, M. Barangi, P. Mazumder
Memristive memories are known for their high data density, small read/write delay, and relatively lower power dissipation. This makes them a good fit for biomedical devices. Here, we demonstrate a 2 kb memristive crossbar memory and interface it with an ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications. The memory operates optimally at 0.8V supply level and is turned off while not in use. The filter system operates in sub-threshold to maximize power savings. The entire system operates at 0.96MHz clock frequency and consumes 744pJ per FIR operation.
{"title":"Memristor crossbar memory for hybrid ultra low power hearing aid speech processor","authors":"Jinal Shah, M. Barangi, P. Mazumder","doi":"10.1109/NANO.2013.6720867","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720867","url":null,"abstract":"Memristive memories are known for their high data density, small read/write delay, and relatively lower power dissipation. This makes them a good fit for biomedical devices. Here, we demonstrate a 2 kb memristive crossbar memory and interface it with an ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications. The memory operates optimally at 0.8V supply level and is turned off while not in use. The filter system operates in sub-threshold to maximize power savings. The entire system operates at 0.96MHz clock frequency and consumes 744pJ per FIR operation.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123495137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720827
Jiahao Zhao, Jing Zhu, You Zheng
Design and fabrication of RF (Radio Frequency)-MEMS (Micro-Electro-Mechanical System) planar inductors with a smart material, Permalloy-SiO2 (PS) nano magnetic granular medium, in accordance with the function purpose of the device is presented. The nano magnetic material aspects determining the contributions and impacts to the device operating at ultra-high frequencies are analyzed via physical model. Properties of the smart PS granular film can be designed and controlled by varied microstructure determined by using varied preparation approaches. Therefore, the performance of several types devices with varied PS granular film holds a promise for fabrication of magnetic planar inductors according to function purpose in Giga-Hertz (GHz) applications.
{"title":"Fabricate High performance RF-MEMS inductor with a smart nano magnetic granular film according to function purpose","authors":"Jiahao Zhao, Jing Zhu, You Zheng","doi":"10.1109/NANO.2013.6720827","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720827","url":null,"abstract":"Design and fabrication of RF (Radio Frequency)-MEMS (Micro-Electro-Mechanical System) planar inductors with a smart material, Permalloy-SiO2 (PS) nano magnetic granular medium, in accordance with the function purpose of the device is presented. The nano magnetic material aspects determining the contributions and impacts to the device operating at ultra-high frequencies are analyzed via physical model. Properties of the smart PS granular film can be designed and controlled by varied microstructure determined by using varied preparation approaches. Therefore, the performance of several types devices with varied PS granular film holds a promise for fabrication of magnetic planar inductors according to function purpose in Giga-Hertz (GHz) applications.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121608006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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