Pub Date : 2025-11-05DOI: 10.1038/s41928-025-01490-3
Alessio Monti
A holography-inspired self-controlled reconfigurable intelligent surface eliminates the need for base station control, paving the way for cost-effective large-scale deployment in 6G networks.
{"title":"Towards cognitive control of intelligent surfaces","authors":"Alessio Monti","doi":"10.1038/s41928-025-01490-3","DOIUrl":"10.1038/s41928-025-01490-3","url":null,"abstract":"A holography-inspired self-controlled reconfigurable intelligent surface eliminates the need for base station control, paving the way for cost-effective large-scale deployment in 6G networks.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 11","pages":"1008-1009"},"PeriodicalIF":40.9,"publicationDate":"2025-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145440917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-03DOI: 10.1038/s41928-025-01484-1
Sunwoo Lee, Shahaboddin Ghajari, Sanaz Sadeghi, Yumin Zheng, Hind Zahr, Alejandro J. Cortese, Wenchao Gu, Kibaek Choe, Aaron Mok, Melanie Wallace, Rui Jiao, Chunyan Wu, Jesse C. Werth, Weiru Fan, Praneeth Mogalipuvvu, Ju Uhn Park, Shitong Zhao, Conrad Smart, Thomas A. Cleland, Melissa R. Warden, Jan Lammerding, Tianyu Wang, Jesse H. Goldberg, Paul L. McEuen, Chris Xu, Alyosha C. Molnar
The long-term recording of neural activity could be used to understand complex behaviours and disorders. However, the development of technology capable of such measurements faces a variety of technical challenges, including the relative motion between recording electrodes and tissue and the excessive displaced volume from implanted electronics. Here we report a subnanolitre-volume tetherless optoelectronic microsystem for neural recording. The system relies on light for photovoltaic power and data transfer, through a light-emitting diode, eliminating the need for wires or other tethers. It uses a single AlGaAs diode as both photovoltaic and light-emitting diode. Complementary metal–oxide–semiconductor circuits provide low-noise amplification, pulse-position-modulated encoding and electro-optical transduction. Two-dimensional materials processing techniques, vacuum annealing and atomic layer deposition, in conjunction with a standard complementary metal–oxide–semiconductor fabrication process, provide compact encapsulation against the corrosive conditions of biological media. We show that the subnanolitre neural implant is capable of chronic (365 days) in vivo recordings in awake mice. A neural implant with a subnanolitre-volume can provide year-long in vivo recordings in awake mice.
{"title":"A subnanolitre tetherless optoelectronic microsystem for chronic neural recording in awake mice","authors":"Sunwoo Lee, Shahaboddin Ghajari, Sanaz Sadeghi, Yumin Zheng, Hind Zahr, Alejandro J. Cortese, Wenchao Gu, Kibaek Choe, Aaron Mok, Melanie Wallace, Rui Jiao, Chunyan Wu, Jesse C. Werth, Weiru Fan, Praneeth Mogalipuvvu, Ju Uhn Park, Shitong Zhao, Conrad Smart, Thomas A. Cleland, Melissa R. Warden, Jan Lammerding, Tianyu Wang, Jesse H. Goldberg, Paul L. McEuen, Chris Xu, Alyosha C. Molnar","doi":"10.1038/s41928-025-01484-1","DOIUrl":"10.1038/s41928-025-01484-1","url":null,"abstract":"The long-term recording of neural activity could be used to understand complex behaviours and disorders. However, the development of technology capable of such measurements faces a variety of technical challenges, including the relative motion between recording electrodes and tissue and the excessive displaced volume from implanted electronics. Here we report a subnanolitre-volume tetherless optoelectronic microsystem for neural recording. The system relies on light for photovoltaic power and data transfer, through a light-emitting diode, eliminating the need for wires or other tethers. It uses a single AlGaAs diode as both photovoltaic and light-emitting diode. Complementary metal–oxide–semiconductor circuits provide low-noise amplification, pulse-position-modulated encoding and electro-optical transduction. Two-dimensional materials processing techniques, vacuum annealing and atomic layer deposition, in conjunction with a standard complementary metal–oxide–semiconductor fabrication process, provide compact encapsulation against the corrosive conditions of biological media. We show that the subnanolitre neural implant is capable of chronic (365 days) in vivo recordings in awake mice. A neural implant with a subnanolitre-volume can provide year-long in vivo recordings in awake mice.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1259-1271"},"PeriodicalIF":40.9,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41928-025-01484-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145427356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-29DOI: 10.1038/s41928-025-01482-3
Jieao Zhu, Ze Gu, Qian Ma, Linglong Dai, Tie Jun Cui
Reconfigurable intelligent surfaces operating at microwave frequencies are of potential use in the development of the sixth generation of wireless communications technology. Such surfaces could, in particular, be used to reprogram the wireless propagation channels in controlled ways and thus provide low-cost wireless capacity boosting, coverage extension and enhanced energy efficiency. To reprogram the channel, each meta-atom of the reconfigurable intelligent surface needs to receive an external control signal, which is usually generated by a base station. However, this requires complicated control cables, which restricts wide deployment. Here we report a self-controlled reconfigurable intelligent surface that is inspired by optical holography. Each meta-atom of the reconfigurable intelligent surface is integrated with a power detector that can record a hologram created from simultaneous microwave illumination from the base station and the user. We use classical Fourier transform to process the measured hologram and retrieve the angular position of the user, which is required for beamforming. As a result, the approach can provide autonomous reconfigurable intelligent surface beamforming without control cables. By integrating power detectors into each of its meta-atoms, a reconfigurable intelligent surface can autonomously determine the location of a user from a microwave hologram formed by illumination from a base station and the user.
{"title":"A self-controlled reconfigurable intelligent surface inspired by optical holography","authors":"Jieao Zhu, Ze Gu, Qian Ma, Linglong Dai, Tie Jun Cui","doi":"10.1038/s41928-025-01482-3","DOIUrl":"10.1038/s41928-025-01482-3","url":null,"abstract":"Reconfigurable intelligent surfaces operating at microwave frequencies are of potential use in the development of the sixth generation of wireless communications technology. Such surfaces could, in particular, be used to reprogram the wireless propagation channels in controlled ways and thus provide low-cost wireless capacity boosting, coverage extension and enhanced energy efficiency. To reprogram the channel, each meta-atom of the reconfigurable intelligent surface needs to receive an external control signal, which is usually generated by a base station. However, this requires complicated control cables, which restricts wide deployment. Here we report a self-controlled reconfigurable intelligent surface that is inspired by optical holography. Each meta-atom of the reconfigurable intelligent surface is integrated with a power detector that can record a hologram created from simultaneous microwave illumination from the base station and the user. We use classical Fourier transform to process the measured hologram and retrieve the angular position of the user, which is required for beamforming. As a result, the approach can provide autonomous reconfigurable intelligent surface beamforming without control cables. By integrating power detectors into each of its meta-atoms, a reconfigurable intelligent surface can autonomously determine the location of a user from a microwave hologram formed by illumination from a base station and the user.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 11","pages":"1108-1118"},"PeriodicalIF":40.9,"publicationDate":"2025-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145381811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-28DOI: 10.1038/s41928-025-01485-0
Stella Laperrousaz, Xin Chen, Marion Cleusix, Lucas Jourdan, Laurène Tribolet, Fabien Sorin
Soft electronic fibres are potential building blocks for a variety of emerging technologies including smart textiles and wearable health monitors. However, it remains a challenge to fabricate fibres that combine conductive and dielectric domains in complex architectures in a simple and scalable way. Here we show that a thermal drawing approach can be used to fabricate stretchable fibre-based sensors from liquid-metal-embedded elastomers. The material formulation and processing parameters can be controlled to create high aspect-ratio stretchable fibres that integrate high-conductivity (around 103 S cm−1) and high-dielectric ( $$kappa approx 13.5$$ ) domains across the fibre cross-section. We illustrate the versatility of our approach by creating an all-liquid-metal-based capacitive fibre sensor, which offers a gauge factor of 0.96, stretchability of 925% and high stability to cyclic deformation. We also integrate our fibre-based sensor into textiles and demonstrate an efficient smart knee brace. A thermal drawing method can be used to create stretchable electronic fibres from a liquid-metal-embedded elastomer that can contain conductive and insulating domains across the fibre cross-section.
软电子纤维是各种新兴技术的潜在基石，包括智能纺织品和可穿戴健康监测器。然而，在复杂的结构中以简单和可扩展的方式制造结合导电和介电畴的纤维仍然是一个挑战。在这里，我们展示了一种热拉伸方法可以用来制造基于液体金属嵌入弹性体的可拉伸纤维传感器。可以控制材料配方和加工参数，以创建高纵横比的可拉伸纤维，该纤维在纤维截面上集成了高导电性（约103 S cm−1）和高介电（$$kappa approx 13.5$$）域。我们通过创建全液体金属电容式光纤传感器来说明我们方法的多功能性，该传感器的测量系数为0.96，拉伸性为925% and high stability to cyclic deformation. We also integrate our fibre-based sensor into textiles and demonstrate an efficient smart knee brace. A thermal drawing method can be used to create stretchable electronic fibres from a liquid-metal-embedded elastomer that can contain conductive and insulating domains across the fibre cross-section.
{"title":"Electronic fibres via the thermal drawing of liquid-metal-embedded elastomers","authors":"Stella Laperrousaz, Xin Chen, Marion Cleusix, Lucas Jourdan, Laurène Tribolet, Fabien Sorin","doi":"10.1038/s41928-025-01485-0","DOIUrl":"10.1038/s41928-025-01485-0","url":null,"abstract":"Soft electronic fibres are potential building blocks for a variety of emerging technologies including smart textiles and wearable health monitors. However, it remains a challenge to fabricate fibres that combine conductive and dielectric domains in complex architectures in a simple and scalable way. Here we show that a thermal drawing approach can be used to fabricate stretchable fibre-based sensors from liquid-metal-embedded elastomers. The material formulation and processing parameters can be controlled to create high aspect-ratio stretchable fibres that integrate high-conductivity (around 103 S cm−1) and high-dielectric ( $$kappa approx 13.5$$ ) domains across the fibre cross-section. We illustrate the versatility of our approach by creating an all-liquid-metal-based capacitive fibre sensor, which offers a gauge factor of 0.96, stretchability of 925% and high stability to cyclic deformation. We also integrate our fibre-based sensor into textiles and demonstrate an efficient smart knee brace. A thermal drawing method can be used to create stretchable electronic fibres from a liquid-metal-embedded elastomer that can contain conductive and insulating domains across the fibre cross-section.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 11","pages":"1072-1081"},"PeriodicalIF":40.9,"publicationDate":"2025-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145382423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-28DOI: 10.1038/s41928-025-01480-5
Conventional analogue compute-in-memory suffers from limited accuracy and reliability. Now, a spintronic digital compute-in-memory macro integrates in-bitcell multiplication and digitization, and flexible-precision accumulation, to deliver software-equivalent artificial intelligence accuracy. The macro achieves computation latencies of 7.4–29.6 ns and energy efficiencies of 7.02–112.3 tera-operations per second per watt.
传统的内存模拟计算精度和可靠性有限。现在，一个自旋电子数字内存计算宏集成了位元倍增和数字化，以及灵活的精度积累，以提供相当于软件的人工智能精度。该宏实现了7.4-29.6 ns的计算延迟和7.02-112.3 tb / s / w的能量效率。
{"title":"Spintronic digital compute-in-memory macro for efficient artificial intelligence","authors":"","doi":"10.1038/s41928-025-01480-5","DOIUrl":"10.1038/s41928-025-01480-5","url":null,"abstract":"Conventional analogue compute-in-memory suffers from limited accuracy and reliability. Now, a spintronic digital compute-in-memory macro integrates in-bitcell multiplication and digitization, and flexible-precision accumulation, to deliver software-equivalent artificial intelligence accuracy. The macro achieves computation latencies of 7.4–29.6 ns and energy efficiencies of 7.02–112.3 tera-operations per second per watt.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 11","pages":"1012-1013"},"PeriodicalIF":40.9,"publicationDate":"2025-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145381812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-27DOI: 10.1038/s41928-025-01487-y
Sinan Yilmaz, Jaebin Choi, Ilke Uguz, Jongwoon Kim, Alejandro Akrouh, Adriaan J. Taal, Victoria Andino-Pavlovsky, Heyu Yin, Jason D. Fabbri, Laurent Moreaux, Michael Roukes, Kenneth L. Shepard
Optical imaging offers a number of advantages over electrophysiology including cell-type specificity. However, its application has been limited to the investigation of shallow brain regions (less than 2 mm) because of the light scattering property of brain tissue. Passive optical conduits, such as graded-index lenses and waveguides, have permitted access to deeper locales but with restricted resolution and field of view, while creating massive lesions along the inserted path. Here we report an implantable complementary metal–oxide–semiconductor fluorescence imager with single-neuron resolution. The imager has a 512-pixel silicon image sensor post-processed into a 4.1-mm-long, 120-μm-wide shank with a collinear fibre for illumination. It can record transient fluorescent signals in deep brain regions at 400 frames per second. We show that the system can offer single-neuron resolution in functional imaging of GCaMP6s-expressing neurons at a frame rate of 400 frames per second. A complementary metal–oxide–semiconductor (CMOS) imager that has a 512-pixel silicon image sensor post-processed into a 4.1-mm-long, 120-μm-wide shank with a collinear fibre for illumination can be used to record transient fluorescent signals in deep brain regions at 400 frames per second.
{"title":"An implantable CMOS deep-brain fluorescence imager with single-neuron resolution","authors":"Sinan Yilmaz, Jaebin Choi, Ilke Uguz, Jongwoon Kim, Alejandro Akrouh, Adriaan J. Taal, Victoria Andino-Pavlovsky, Heyu Yin, Jason D. Fabbri, Laurent Moreaux, Michael Roukes, Kenneth L. Shepard","doi":"10.1038/s41928-025-01487-y","DOIUrl":"10.1038/s41928-025-01487-y","url":null,"abstract":"Optical imaging offers a number of advantages over electrophysiology including cell-type specificity. However, its application has been limited to the investigation of shallow brain regions (less than 2 mm) because of the light scattering property of brain tissue. Passive optical conduits, such as graded-index lenses and waveguides, have permitted access to deeper locales but with restricted resolution and field of view, while creating massive lesions along the inserted path. Here we report an implantable complementary metal–oxide–semiconductor fluorescence imager with single-neuron resolution. The imager has a 512-pixel silicon image sensor post-processed into a 4.1-mm-long, 120-μm-wide shank with a collinear fibre for illumination. It can record transient fluorescent signals in deep brain regions at 400 frames per second. We show that the system can offer single-neuron resolution in functional imaging of GCaMP6s-expressing neurons at a frame rate of 400 frames per second. A complementary metal–oxide–semiconductor (CMOS) imager that has a 512-pixel silicon image sensor post-processed into a 4.1-mm-long, 120-μm-wide shank with a collinear fibre for illumination can be used to record transient fluorescent signals in deep brain regions at 400 frames per second.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 12","pages":"1247-1258"},"PeriodicalIF":40.9,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145381817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two-dimensional (2D) semiconductors are promising building blocks for advanced electronic devices. However, the fabrication of high-quality 2D semiconductor wafers with engineered layers remains a challenge. Here we describe a direct wafer bonding and debonding method that can be applied to semiconductor monolayers that have been grown epitaxially on high-adhesion substrates such as sapphire. The process operates in both vacuum and a glovebox environment and requires no intermediate-layer assistance. It produces stacked 2D semiconductors with clean interfaces and wafer-scale uniformity and allows precise control of layer numbers and the interlayer twist angle. We use the approach to create different homostructures and heterostructures with 2D monolayers, including molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2). We also show that the approach can directly bond monolayer MoS2 onto high-κ dielectric substrates (HfO2 and Al2O3) while preserving its intrinsic electronic properties. A bonding and debonding strategy is used to stack epitaxially grown semiconductor monolayers into various structures with precise control of the layer number and interlayer twist angle.
{"title":"Direct bonding and debonding of two-dimensional semiconductors","authors":"Jieying Liu, Jiaojiao Zhao, Tong Li, Depeng Ji, Liyan Dai, Lu Li, Zheng Wei, JiaWei Li, Qinqin Wang, Hua Yu, Lanying Zhou, Yutong Chen, Fanfan Wu, Mingtong Zhu, Huacong Sun, Yun Li, Songge Zhang, Jinpeng Tian, Xingchao Zhang, Nianpeng Lu, Xuedong Bai, Zexian Cao, Shenghuang Lin, Shuopei Wang, Dongxia Shi, Na Li, Luojun Du, Wei Yang, LeDe Xian, Guangyu Zhang","doi":"10.1038/s41928-025-01474-3","DOIUrl":"10.1038/s41928-025-01474-3","url":null,"abstract":"Two-dimensional (2D) semiconductors are promising building blocks for advanced electronic devices. However, the fabrication of high-quality 2D semiconductor wafers with engineered layers remains a challenge. Here we describe a direct wafer bonding and debonding method that can be applied to semiconductor monolayers that have been grown epitaxially on high-adhesion substrates such as sapphire. The process operates in both vacuum and a glovebox environment and requires no intermediate-layer assistance. It produces stacked 2D semiconductors with clean interfaces and wafer-scale uniformity and allows precise control of layer numbers and the interlayer twist angle. We use the approach to create different homostructures and heterostructures with 2D monolayers, including molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2). We also show that the approach can directly bond monolayer MoS2 onto high-κ dielectric substrates (HfO2 and Al2O3) while preserving its intrinsic electronic properties. A bonding and debonding strategy is used to stack epitaxially grown semiconductor monolayers into various structures with precise control of the layer number and interlayer twist angle.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 11","pages":"1038-1045"},"PeriodicalIF":40.9,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145381815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-27DOI: 10.1038/s41928-025-01476-1
Ablimit Aili, Jihwan Choi, Yew Soon Ong, Yonggang Wen
The increasing occupation of space orbits by fleets of satellites has led to increasing generation of data in space. At the same time, the expansion of technologies such as artificial intelligence (AI) has led to an increasing number of energy-intensive data centres, which have large carbon footprints, back on Earth. The former calls for space-based computing solutions, whereas the latter calls for carbon-neutral computing solutions. Here we explore the potential of developing carbon-neutral data centres in space. Such an approach would be enabled by the sustainability features of space: abundant solar energy that can be captured with high-efficiency solar cells and a giant cold heat sink (deep space itself) that can spontaneously take in large amounts of waste heat released from computing. We outline a framework for orbital edge data centres, which would be equipped with data sensors and AI accelerators, for carbon-neutral data processing at source in space. We then outline a framework for orbital cloud data centres in the form of a constellation of computational satellites equipped with servers and broadband connectivity, for both in-space and ground-outsourced computing applications. We also provide a method to evaluate the lifecycle carbon usage effectiveness of these cloud data centres. This Perspective explores the potential of developing carbon-neutral data centres in space, providing frameworks for orbital edge data centres, which would be equipped with data sensors and AI accelerators, and orbital cloud data centres, which would be based on constellations of computational satellites equipped with servers and broadband connectivity.
{"title":"The development of carbon-neutral data centres in space","authors":"Ablimit Aili, Jihwan Choi, Yew Soon Ong, Yonggang Wen","doi":"10.1038/s41928-025-01476-1","DOIUrl":"10.1038/s41928-025-01476-1","url":null,"abstract":"The increasing occupation of space orbits by fleets of satellites has led to increasing generation of data in space. At the same time, the expansion of technologies such as artificial intelligence (AI) has led to an increasing number of energy-intensive data centres, which have large carbon footprints, back on Earth. The former calls for space-based computing solutions, whereas the latter calls for carbon-neutral computing solutions. Here we explore the potential of developing carbon-neutral data centres in space. Such an approach would be enabled by the sustainability features of space: abundant solar energy that can be captured with high-efficiency solar cells and a giant cold heat sink (deep space itself) that can spontaneously take in large amounts of waste heat released from computing. We outline a framework for orbital edge data centres, which would be equipped with data sensors and AI accelerators, for carbon-neutral data processing at source in space. We then outline a framework for orbital cloud data centres in the form of a constellation of computational satellites equipped with servers and broadband connectivity, for both in-space and ground-outsourced computing applications. We also provide a method to evaluate the lifecycle carbon usage effectiveness of these cloud data centres. This Perspective explores the potential of developing carbon-neutral data centres in space, providing frameworks for orbital edge data centres, which would be equipped with data sensors and AI accelerators, and orbital cloud data centres, which would be based on constellations of computational satellites equipped with servers and broadband connectivity.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 11","pages":"1016-1026"},"PeriodicalIF":40.9,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145381814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-27DOI: 10.1038/s41928-025-01498-9
Transistors are central to modern technology, a role that has been made possible by continuous advances in silicon devices. But how exactly further advances will be achieved is less clear.
晶体管是现代技术的核心，硅器件的不断进步使其成为可能。但究竟如何取得进一步进展尚不清楚。
{"title":"100 years of field-effect transistors","authors":"","doi":"10.1038/s41928-025-01498-9","DOIUrl":"10.1038/s41928-025-01498-9","url":null,"abstract":"Transistors are central to modern technology, a role that has been made possible by continuous advances in silicon devices. But how exactly further advances will be achieved is less clear.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 10","pages":"871-871"},"PeriodicalIF":40.9,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41928-025-01498-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145371976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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