Pub Date : 2024-07-08DOI: 10.1038/s41928-024-01205-0
Saravanan Yuvaraja, Hendrik Faber, Mritunjay Kumar, Na Xiao, Glen Isaac Maciel García, Xiao Tang, Thomas D. Anthopoulos, Xiaohang Li
The monolithic three-dimensional vertical integration of thin-film transistor (TFT) technologies could be used to create high-density, energy-efficient and low-cost integrated circuits. However, the development of scalable processes for integrating three-dimensional TFT devices is challenging. Here, we report the monolithic three-dimensional integration of indium oxide (In2O3) TFTs on a silicon/silicon dioxide (Si/SiO2) substrate at room temperature. We use an approach that is compatible with complementary metal–oxide–semiconductor (CMOS) processes to stack ten n-channel In2O3 TFTs. Different architectures—including bottom-, top- and dual-gate TFTs—can be fabricated at different layers in the stack. Our dual-gate devices exhibit enhanced electrical performance with a maximum field-effect mobility of 15 cm2 V−1 s−1, a subthreshold swing of 0.4 V dec−1 and a current on/off ratio of 108. By monolithically integrating dual-gate In2O3 TFTs at different locations in the stack, we created unipolar invertor circuits with a signal gain of around 50 and wide noise margins. The dual-gate devices also allow fine-tuning of the invertors to achieve symmetric voltage-transfer characteristics and optimal noise margins. A room-temperature approach to monolithic three-dimensional thin-film integration can be used to stack ten layers of n-channel indium oxide transistors on silicon/silicon dioxide substrates, while incorporating a range of architectures.
薄膜晶体管（TFT）技术的单片三维垂直集成可用于制造高密度、高能效和低成本的集成电路。然而，开发用于集成三维 TFT 器件的可扩展工艺具有挑战性。在此，我们报告了在室温下将氧化铟（In2O3）TFT 单片三维集成到硅/二氧化硅（Si/SiO2）衬底上的情况。我们采用一种与互补金属氧化物半导体（CMOS）工艺兼容的方法来堆叠十个 n 沟道 In2O3 TFT。在堆栈的不同层上可以制造出不同的结构，包括底部、顶部和双栅极 TFT。我们的双栅极器件具有更强的电气性能，最大场效应迁移率为 15 cm2 V-1 s-1，阈下摆幅为 0.4 V dec-1，电流开/关比为 108。通过在堆栈的不同位置单片集成双栅极 In2O3 TFT，我们创建了单极反相器电路，信号增益约为 50，噪声裕度大。双栅极器件还允许对反相器进行微调，以实现对称的电压传输特性和最佳的噪声裕度。
{"title":"Three-dimensional integrated metal-oxide transistors","authors":"Saravanan Yuvaraja, Hendrik Faber, Mritunjay Kumar, Na Xiao, Glen Isaac Maciel García, Xiao Tang, Thomas D. Anthopoulos, Xiaohang Li","doi":"10.1038/s41928-024-01205-0","DOIUrl":"10.1038/s41928-024-01205-0","url":null,"abstract":"The monolithic three-dimensional vertical integration of thin-film transistor (TFT) technologies could be used to create high-density, energy-efficient and low-cost integrated circuits. However, the development of scalable processes for integrating three-dimensional TFT devices is challenging. Here, we report the monolithic three-dimensional integration of indium oxide (In2O3) TFTs on a silicon/silicon dioxide (Si/SiO2) substrate at room temperature. We use an approach that is compatible with complementary metal–oxide–semiconductor (CMOS) processes to stack ten n-channel In2O3 TFTs. Different architectures—including bottom-, top- and dual-gate TFTs—can be fabricated at different layers in the stack. Our dual-gate devices exhibit enhanced electrical performance with a maximum field-effect mobility of 15 cm2 V−1 s−1, a subthreshold swing of 0.4 V dec−1 and a current on/off ratio of 108. By monolithically integrating dual-gate In2O3 TFTs at different locations in the stack, we created unipolar invertor circuits with a signal gain of around 50 and wide noise margins. The dual-gate devices also allow fine-tuning of the invertors to achieve symmetric voltage-transfer characteristics and optimal noise margins. A room-temperature approach to monolithic three-dimensional thin-film integration can be used to stack ten layers of n-channel indium oxide transistors on silicon/silicon dioxide substrates, while incorporating a range of architectures.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01205-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Miniaturized optical spectrometers could be of use in portable and wearable applications. Such devices have typically been based on arrays of photodetectors that provide distinct spectral responses or use complex miniaturized dispersive optics. However, these approaches often result in large centimetre-sized systems. Here we report a microsized optical spectrometer that is based on an optical-spacer-integrated photomultiplication-type organic photodetector with a bias-tunable spectral response. The approach allows the computational reconstruction of an incident light spectrum from photocurrents measured under a set of different bias voltages. The device, which has a footprint of 0.0004 cm2, is capable of broadband operation across the entire visible wavelength with a sub-5-nm resolution. To illustrate the capabilities of this approach, we fabricate an 8 × 8 spectroscopic sensor array that can be used for hyperspectral imaging. Optical-spacer-integrated photomultiplication organic photodetectors with electrically tunable spectral response can provide high-resolution optical characterization across the visible spectrum.
{"title":"A microsized optical spectrometer based on an organic photodetector with an electrically tunable spectral response","authors":"Xie He, Yuanzhe Li, Hui Yu, Guodong Zhou, Lingyi Ke, Hin-Lap Yip, Ni Zhao","doi":"10.1038/s41928-024-01199-9","DOIUrl":"10.1038/s41928-024-01199-9","url":null,"abstract":"Miniaturized optical spectrometers could be of use in portable and wearable applications. Such devices have typically been based on arrays of photodetectors that provide distinct spectral responses or use complex miniaturized dispersive optics. However, these approaches often result in large centimetre-sized systems. Here we report a microsized optical spectrometer that is based on an optical-spacer-integrated photomultiplication-type organic photodetector with a bias-tunable spectral response. The approach allows the computational reconstruction of an incident light spectrum from photocurrents measured under a set of different bias voltages. The device, which has a footprint of 0.0004 cm2, is capable of broadband operation across the entire visible wavelength with a sub-5-nm resolution. To illustrate the capabilities of this approach, we fabricate an 8 × 8 spectroscopic sensor array that can be used for hyperspectral imaging. Optical-spacer-integrated photomultiplication organic photodetectors with electrically tunable spectral response can provide high-resolution optical characterization across the visible spectrum.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1038/s41928-024-01192-2
Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdú, Andrés Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluís Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande, Mario Lanza
Radiofrequency switches that drive or block high-frequency electromagnetic signals—typically, a few to tens of gigahertz—are essential components in modern communication devices. However, demand for higher data transmission rates requires radiofrequency switches capable of operating at frequencies beyond 100 GHz, which is challenging for current technologies. Here we report ambipolar memristive radiofrequency switches that are based on multilayer hexagonal boron nitride and can operate at frequencies up to 260 GHz. The ambipolar behaviour, which could help reduce peripheral hardware requirements, is due to a Joule-effect-assisted reset. We show switching in 21 devices with low-resistance states averaging 294 Ω and endurances of 2,000 cycles. With further biasing optimization, we reduce the resistance to 9.3 ± 3.7 Ω over more than 475 cycles, and achieve an insertion loss of 0.9 dB at 120 GHz. We also build a series–shunt device configuration with an isolation of 35 dB at 120 GHz. An optimized pulsed voltage write–verify switching approach can be used to improve the switching performance of memristors based on hexagonal boron nitride for radiofrequency circuit applications.
{"title":"Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications","authors":"Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdú, Andrés Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluís Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande, Mario Lanza","doi":"10.1038/s41928-024-01192-2","DOIUrl":"10.1038/s41928-024-01192-2","url":null,"abstract":"Radiofrequency switches that drive or block high-frequency electromagnetic signals—typically, a few to tens of gigahertz—are essential components in modern communication devices. However, demand for higher data transmission rates requires radiofrequency switches capable of operating at frequencies beyond 100 GHz, which is challenging for current technologies. Here we report ambipolar memristive radiofrequency switches that are based on multilayer hexagonal boron nitride and can operate at frequencies up to 260 GHz. The ambipolar behaviour, which could help reduce peripheral hardware requirements, is due to a Joule-effect-assisted reset. We show switching in 21 devices with low-resistance states averaging 294 Ω and endurances of 2,000 cycles. With further biasing optimization, we reduce the resistance to 9.3 ± 3.7 Ω over more than 475 cycles, and achieve an insertion loss of 0.9 dB at 120 GHz. We also build a series–shunt device configuration with an isolation of 35 dB at 120 GHz. An optimized pulsed voltage write–verify switching approach can be used to improve the switching performance of memristors based on hexagonal boron nitride for radiofrequency circuit applications.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The development of wearable and on-skin electronics requires high-density stretchable electronic systems that can conform to soft tissue, operate continuously and provide long-term biocompatibility. Most stretchable electronic systems have low-density integration and are wired with external printed circuit boards, which limits functionality, deteriorates user experience and impedes long-term usability. Here we report an intrinsically permeable, three-dimensional integrated electronic skin. The system combines high-density inorganic electronic components with organic stretchable fibrous substrates using three-dimensional patterned, multilayered liquid metal circuits and stretchable hybrid liquid metal solder. The electronic skin exhibits high softness, durability, fabric-like permeability to air and moisture and sufficient biocompatibility for on-skin attachment for a week. We use the platform to create wireless, battery-powered and battery-free skin-attached bioelectronic systems that offer complex system-level functions, including the stable sensing of biosignals, signal processing and analysis, electrostimulation and wireless communication. An electronic skin that connects rigid inorganic electronic components with a multilayered stretchy liquid metal fibre mat using a hybrid liquid metal solder can offer high integration density while remaining soft, permeable and biocompatible.
{"title":"Permeable, three-dimensional integrated electronic skins with stretchable hybrid liquid metal solders","authors":"Qiuna Zhuang, Kuanming Yao, Chi Zhang, Xian Song, Jingkun Zhou, Yufei Zhang, Qiyao Huang, Yizhao Zhou, Xinge Yu, Zijian Zheng","doi":"10.1038/s41928-024-01189-x","DOIUrl":"10.1038/s41928-024-01189-x","url":null,"abstract":"The development of wearable and on-skin electronics requires high-density stretchable electronic systems that can conform to soft tissue, operate continuously and provide long-term biocompatibility. Most stretchable electronic systems have low-density integration and are wired with external printed circuit boards, which limits functionality, deteriorates user experience and impedes long-term usability. Here we report an intrinsically permeable, three-dimensional integrated electronic skin. The system combines high-density inorganic electronic components with organic stretchable fibrous substrates using three-dimensional patterned, multilayered liquid metal circuits and stretchable hybrid liquid metal solder. The electronic skin exhibits high softness, durability, fabric-like permeability to air and moisture and sufficient biocompatibility for on-skin attachment for a week. We use the platform to create wireless, battery-powered and battery-free skin-attached bioelectronic systems that offer complex system-level functions, including the stable sensing of biosignals, signal processing and analysis, electrostimulation and wireless communication. An electronic skin that connects rigid inorganic electronic components with a multilayered stretchy liquid metal fibre mat using a hybrid liquid metal solder can offer high integration density while remaining soft, permeable and biocompatible.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1038/s41928-024-01206-z
Three-dimensional electronics is our 2024 technology of the year.
三维电子技术是我们的 2024 年度技术。
{"title":"Build it up","authors":"","doi":"10.1038/s41928-024-01206-z","DOIUrl":"10.1038/s41928-024-01206-z","url":null,"abstract":"Three-dimensional electronics is our 2024 technology of the year.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01206-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141462407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1038/s41928-024-01175-3
Debendra Das Sharma, Ravi V. Mahajan
Heterogeneous integration of chips in three-dimensional systems will be needed to meet increasing global demands for computing power.
为满足全球对计算能力日益增长的需求，需要在三维系统中实现芯片的异构集成。
{"title":"Advanced packaging of chiplets for future computing needs","authors":"Debendra Das Sharma, Ravi V. Mahajan","doi":"10.1038/s41928-024-01175-3","DOIUrl":"10.1038/s41928-024-01175-3","url":null,"abstract":"Heterogeneous integration of chips in three-dimensional systems will be needed to meet increasing global demands for computing power.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141462411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electrons carry both spin and orbital angular momentum. The search for phenomena that generate a flow of spin angular momentum—a spin current—has led to the development of spintronics. In contrast, the orbital counterpart of spin current—an orbital current—has largely been overlooked, and the generation of an orbital current remains challenging. Here we report the observation of orbital-current generation from magnetization dynamics: orbital pumping. We show that orbital pumping in nickel/titanium bilayers injects an orbital current into the titanium layer, which we detect through the inverse orbital Hall effect. Orbital pumping is the orbital counterpart of spin pumping, a versatile and powerful mechanism for spin-current generation. Our findings could, thus, provide a promising approach for generating orbital currents and could help in the development of the orbital analogue of spintronics: orbitronics. In ferromagnetic/non-magnetic bilayers of nickel/titanium, the precession of magnetization in the nickel layer can inject an orbital current into the titanium layer through orbital pumping, the orbital counterpart of spin pumping.
{"title":"Observation of orbital pumping","authors":"Hiroki Hayashi, Dongwook Go, Satoshi Haku, Yuriy Mokrousov, Kazuya Ando","doi":"10.1038/s41928-024-01193-1","DOIUrl":"10.1038/s41928-024-01193-1","url":null,"abstract":"Electrons carry both spin and orbital angular momentum. The search for phenomena that generate a flow of spin angular momentum—a spin current—has led to the development of spintronics. In contrast, the orbital counterpart of spin current—an orbital current—has largely been overlooked, and the generation of an orbital current remains challenging. Here we report the observation of orbital-current generation from magnetization dynamics: orbital pumping. We show that orbital pumping in nickel/titanium bilayers injects an orbital current into the titanium layer, which we detect through the inverse orbital Hall effect. Orbital pumping is the orbital counterpart of spin pumping, a versatile and powerful mechanism for spin-current generation. Our findings could, thus, provide a promising approach for generating orbital currents and could help in the development of the orbital analogue of spintronics: orbitronics. In ferromagnetic/non-magnetic bilayers of nickel/titanium, the precession of magnetization in the nickel layer can inject an orbital current into the titanium layer through orbital pumping, the orbital counterpart of spin pumping.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141461899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1038/s41928-024-01188-y
Elisa Vianello, Melika Payvand
Three-dimensional technology — which can offer enhanced integration density and improved data communication — will be required to build large-scale artificial computing systems inspired by the brain.
三维技术可以提高集成密度，改善数据通信，是建立受大脑启发的大规模人工计算系统所必需的。
{"title":"Scaling neuromorphic systems with 3D technologies","authors":"Elisa Vianello, Melika Payvand","doi":"10.1038/s41928-024-01188-y","DOIUrl":"10.1038/s41928-024-01188-y","url":null,"abstract":"Three-dimensional technology — which can offer enhanced integration density and improved data communication — will be required to build large-scale artificial computing systems inspired by the brain.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141462658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1038/s41928-024-01187-z
Chao Xiang, John E. Bowers
The three-dimensional integration of electronic and photonic integrated circuits could solve critical input/output limitations in existing computing chips, and create larger, more complex chips for application in future data centres and high-performance systems.
{"title":"Building 3D integrated circuits with electronics and photonics","authors":"Chao Xiang, John E. Bowers","doi":"10.1038/s41928-024-01187-z","DOIUrl":"10.1038/s41928-024-01187-z","url":null,"abstract":"The three-dimensional integration of electronic and photonic integrated circuits could solve critical input/output limitations in existing computing chips, and create larger, more complex chips for application in future data centres and high-performance systems.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141462659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1038/s41928-024-01191-3
Peng Wu, Jing Kong
Atomic-layer yttrium doping can be used to form ohmic contacts between molybdenum disulfide channel layers and metals, creating high-performance 2D transistors with low contact resistances.
{"title":"Doping for ohmic contacts in 2D transistors","authors":"Peng Wu, Jing Kong","doi":"10.1038/s41928-024-01191-3","DOIUrl":"10.1038/s41928-024-01191-3","url":null,"abstract":"Atomic-layer yttrium doping can be used to form ohmic contacts between molybdenum disulfide channel layers and metals, creating high-performance 2D transistors with low contact resistances.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141461989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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