Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516349
T. Yamamoto, M. Kayama, Y. Kawamura
InGaAsP/InAlAsP multiple quantum wells (MQWs) for 1 μm wavelength region optical modulators were proposed and were grown by molecular beam epitaxy (MBE). Optical properties, such as photoluminescence and optical absorption of InAlAsP layers, InGaAs/InAlAsP MQW layers and InGaAsP/InAlAsP MQW layers were studied in detail. A clear absorption edge was observed at about 1.06 μm for InGaAsP/InAlAsP MQW layers.
{"title":"Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region","authors":"T. Yamamoto, M. Kayama, Y. Kawamura","doi":"10.1109/ICIPRM.2010.5516349","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516349","url":null,"abstract":"InGaAsP/InAlAsP multiple quantum wells (MQWs) for 1 μm wavelength region optical modulators were proposed and were grown by molecular beam epitaxy (MBE). Optical properties, such as photoluminescence and optical absorption of InAlAsP layers, InGaAs/InAlAsP MQW layers and InGaAsP/InAlAsP MQW layers were studied in detail. A clear absorption edge was observed at about 1.06 μm for InGaAsP/InAlAsP MQW layers.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"22 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113971314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516076
M. S. Kayastha, Ikuo Matsunami, D. Sapkota, M. Takahashi, K. Wakita
Highly efficient surface normal spatial light modulators (SLMs) using ultrahigh purity GaAs layers (30 μm thick) grown on (100) — oriented n+ — GaAs substrate by liquid phase epitaxy (LPE) method have been realized. The extinction ratio of 25 dB has been demonstrated with a low — driving voltage (32 V) at 895 nm, based on electroabsorption (EA) effect. Very large depletion length over 150 μm is confirmed by analyzing the extinction ratio and capacitance- voltage (C-V) measurements. The calculated value of impurity concentration is low (≈1012 cm−3) and indicates donor and accepter in the device are highly compensated.
{"title":"Low driving voltage spatial light modulator fabricated by ultrahigh-purity GaAs","authors":"M. S. Kayastha, Ikuo Matsunami, D. Sapkota, M. Takahashi, K. Wakita","doi":"10.1109/ICIPRM.2010.5516076","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516076","url":null,"abstract":"Highly efficient surface normal spatial light modulators (SLMs) using ultrahigh purity GaAs layers (30 μm thick) grown on (100) — oriented n<sup>+</sup> — GaAs substrate by liquid phase epitaxy (LPE) method have been realized. The extinction ratio of 25 dB has been demonstrated with a low — driving voltage (32 V) at 895 nm, based on electroabsorption (EA) effect. Very large depletion length over 150 μm is confirmed by analyzing the extinction ratio and capacitance- voltage (C-V) measurements. The calculated value of impurity concentration is low (≈10<sup>12</sup> cm<sup>−3</sup>) and indicates donor and accepter in the device are highly compensated.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114274315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516393
Miyuki Esaki, N. Inaba, A. Fukuda, H. Imai
We have compared the photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots (QD) structures with that of InGaAs/InP quantum well (QW) structures by changing the incident angle for TE polarized excitation light. From the results, we have found the shift of the PL peak wavelength is different between QD and QW. Then, we have measured the change in the FWHM of the PL spectrum against the excitation light intensity. The increment rate of the FWHM for QD is larger than that for QW. From the above, we have supposed each QD couples electrically to form a continuous band structure and the quantum levels broaden, due to adjacent QD whose size are variant. It means the band filling effect for the bulk sample occurs in QD samples.
{"title":"Comparison of the photoluminescence spectra between quantum well structure and quantum dots structure","authors":"Miyuki Esaki, N. Inaba, A. Fukuda, H. Imai","doi":"10.1109/ICIPRM.2010.5516393","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516393","url":null,"abstract":"We have compared the photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots (QD) structures with that of InGaAs/InP quantum well (QW) structures by changing the incident angle for TE polarized excitation light. From the results, we have found the shift of the PL peak wavelength is different between QD and QW. Then, we have measured the change in the FWHM of the PL spectrum against the excitation light intensity. The increment rate of the FWHM for QD is larger than that for QW. From the above, we have supposed each QD couples electrically to form a continuous band structure and the quantum levels broaden, due to adjacent QD whose size are variant. It means the band filling effect for the bulk sample occurs in QD samples.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127788849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516357
T. González, I. Íñiguez-de-la-Torre, D. Pardo, A. Song, J. Mateos
By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 400 GHz are predicted, reaching more than 600 GHz for 0.5 μm. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes. By simulating two diodes in parallel, we analyze the possible loss of efficiency due to the technological dispersion in channel lengths.
{"title":"THz generation based on Gunn oscillations in GaN planar asymmetric nanodiodes","authors":"T. González, I. Íñiguez-de-la-Torre, D. Pardo, A. Song, J. Mateos","doi":"10.1109/ICIPRM.2010.5516357","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516357","url":null,"abstract":"By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 400 GHz are predicted, reaching more than 600 GHz for 0.5 μm. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes. By simulating two diodes in parallel, we analyze the possible loss of efficiency due to the technological dispersion in channel lengths.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126841998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516381
Geng-Ying Liau, Heng-Kuang Lin, P. Chiu, H. Ho, J. Chyi, C. Ko, T. Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, C. Wann
Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In0.44Ga0.56Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In0.44Ga0.56Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 cm2/V s. Ti/Pt/Au and Pt/Ti/Pt/Au metals were utilized in Schottky gate metallization processes for evaluating their effects on the device performance. Considering the diffusivity of Pt metals, the devices with as-deposited and annealed Pt-based gates were characterized simultaneously and compared with the ones with Ti-based gates. The devices with Ti-based gates yielded superior dc and rf performances to those with Pt-based gates.
{"title":"Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development","authors":"Geng-Ying Liau, Heng-Kuang Lin, P. Chiu, H. Ho, J. Chyi, C. Ko, T. Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, C. Wann","doi":"10.1109/ICIPRM.2010.5516381","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516381","url":null,"abstract":"Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In0.44Ga0.56Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In0.44Ga0.56Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 cm2/V s. Ti/Pt/Au and Pt/Ti/Pt/Au metals were utilized in Schottky gate metallization processes for evaluating their effects on the device performance. Considering the diffusivity of Pt metals, the devices with as-deposited and annealed Pt-based gates were characterized simultaneously and compared with the ones with Ti-based gates. The devices with Ti-based gates yielded superior dc and rf performances to those with Pt-based gates.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115012884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515942
H. Okazaki, Taketomo Sato, Naoki Yoshizawa, T. Hashizume
We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-density array of straight pores with 150nm diameter and 5000nm depth was formed by the electrochemical anodization process, where the pore depth could be controlled by the anodization time in the n-type layer. The present p-n InP porous structures show the low optical reflectance in UV-, visible- and near-infrared region. The current transport properties clearly show the rectifying behavior. These features are very promising for practical application to high-efficiency photo-sensitive devices.
{"title":"Optical and electrical properties of InP porous structures formed on P-N substrates","authors":"H. Okazaki, Taketomo Sato, Naoki Yoshizawa, T. Hashizume","doi":"10.1109/ICIPRM.2010.5515942","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515942","url":null,"abstract":"We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-density array of straight pores with 150nm diameter and 5000nm depth was formed by the electrochemical anodization process, where the pore depth could be controlled by the anodization time in the n-type layer. The present p-n InP porous structures show the low optical reflectance in UV-, visible- and near-infrared region. The current transport properties clearly show the rectifying behavior. These features are very promising for practical application to high-efficiency photo-sensitive devices.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128727794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516317
Chin-Te Wang, C. Kuo, Wee-Chin Lim, Li-Han Hsu, H. Hsu, Y. Miyamoto, E. Chang, Szu-Ping Tsai, Y. Chiu
The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high IDS = 425 mA/mm and high gm = 970 mS/mm at VDS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.
{"title":"An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications","authors":"Chin-Te Wang, C. Kuo, Wee-Chin Lim, Li-Han Hsu, H. Hsu, Y. Miyamoto, E. Chang, Szu-Ping Tsai, Y. Chiu","doi":"10.1109/ICIPRM.2010.5516317","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516317","url":null,"abstract":"The fabrication process of an 80 nm In<inf>0.7</inf>Ga<inf>0.3</inf>As MHEMT device with flip-chip packaging on Al<inf>2</inf>O<inf>3</inf> substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I<inf>DS</inf> = 425 mA/mm and high g<inf>m</inf> = 970 mS/mm at V<inf>DS</inf> = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NF<inf>min</inf>)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In<inf>0.7</inf>Ga<inf>0.3</inf>As MHEMT device for low noise applications at W-band.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124072188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516341
T. Amemiya, T. Shindo, D. Takahashi, N. Nishiyama, S. Arai
We demonstrated magnetically excited magnetic resonances with negative magnetic permeability in InP-based optical waveguide with an array of gold split-ring resonators (SRRs). In transmission characteristics of the device, an incident-polarization-dependent absorption feature was clearly observed at 1575 nm. The experimental results show that the SRR array interacted with the magnetic field of the propagating light in the device, producing magnetic resonance at optical frequencies.
{"title":"All-optical switch consisting of multimode interferometer combined with metamaterials: Device design","authors":"T. Amemiya, T. Shindo, D. Takahashi, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2010.5516341","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516341","url":null,"abstract":"We demonstrated magnetically excited magnetic resonances with negative magnetic permeability in InP-based optical waveguide with an array of gold split-ring resonators (SRRs). In transmission characteristics of the device, an incident-polarization-dependent absorption feature was clearly observed at 1575 nm. The experimental results show that the SRR array interacted with the magnetic field of the propagating light in the device, producing magnetic resonance at optical frequencies.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125046678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516136
H. Wang, Y. Tian
In this work, an analytic study of DC characteristics based on the drift-diffusion approach has been performed for the InP/GaAsSb DHBTs. The current transport of InP/GaAsSb/InP DHBTs has been investigated focusing the device temperature dependence. Our simulation results show that, at room temperature, the DC characteristics of the InP/GaAsSb/InP DHBTs is similar to the conventional InP-based HBT using InGaAs as the base layer although a type-II energy band alignment is presented in the InP/GaAsSb HBT. However, due to different mechanisms for the electron injection from the emitter induced by the different conduction band alignments, the InP/GaAsSb HBTs may present a different temperature dependent behavior in term of device current gain as compared to the conventional InP/InGaAs HBTs. Higher current gain could be achieved by the InP/GaAsSb HBTs at elevated temperature.
{"title":"Analytical studies on temperature dependence of DC characteristics of InP/GaAsSb double heterojunction bipolar transistors","authors":"H. Wang, Y. Tian","doi":"10.1109/ICIPRM.2010.5516136","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516136","url":null,"abstract":"In this work, an analytic study of DC characteristics based on the drift-diffusion approach has been performed for the InP/GaAsSb DHBTs. The current transport of InP/GaAsSb/InP DHBTs has been investigated focusing the device temperature dependence. Our simulation results show that, at room temperature, the DC characteristics of the InP/GaAsSb/InP DHBTs is similar to the conventional InP-based HBT using InGaAs as the base layer although a type-II energy band alignment is presented in the InP/GaAsSb HBT. However, due to different mechanisms for the electron injection from the emitter induced by the different conduction band alignments, the InP/GaAsSb HBTs may present a different temperature dependent behavior in term of device current gain as compared to the conventional InP/InGaAs HBTs. Higher current gain could be achieved by the InP/GaAsSb HBTs at elevated temperature.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130433538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516144
H. Ito, T. Okumura, Daisuke Kondo, N. Nishiyama, S. Arai
Based on a theoretical analysis of internal quantum efficiency of a thin-film GaInAsP/InP lateral current injection type Fabry-Perot laser prepared on the semi-insulating InP substrate, its fabrication process was modified. As the results, the internal quantum efficiency was improved by a factor of 2 and the waveguide loss was reduced to 2/3 in comparison with previously reported devices. A threshold current of 11 mA and an external differential quantum efficiency of 33% were obtained for the device with 720 µm-long cavity and 1.7 µm-wide stripe under a room temperature continuous-wave condition.
{"title":"Thin-film GaInAsP/InP lateral current injection type Fabry-Perot laser — Improved quantum efficiency operation","authors":"H. Ito, T. Okumura, Daisuke Kondo, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2010.5516144","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516144","url":null,"abstract":"Based on a theoretical analysis of internal quantum efficiency of a thin-film GaInAsP/InP lateral current injection type Fabry-Perot laser prepared on the semi-insulating InP substrate, its fabrication process was modified. As the results, the internal quantum efficiency was improved by a factor of 2 and the waveguide loss was reduced to 2/3 in comparison with previously reported devices. A threshold current of 11 mA and an external differential quantum efficiency of 33% were obtained for the device with 720 µm-long cavity and 1.7 µm-wide stripe under a room temperature continuous-wave condition.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132938959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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