Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516124
P. Kaspar, R. Kappeler, P. Friedli, H. Jaeckel
The fabrication of air-bridge contacts for in-plane active photonic crystal devices is presented. The technology allows to access waveguides as narrow as 200nm. The main fabrication challenges described in detail are surface planarization and formation of isolation layers for contact pads. The issue of surface damage effects on dry-etched sidewalls is addressed and current measurements on narrow contacts were performed.
{"title":"Air-bridge contact fabrication for in-plane active photonic crystal devices","authors":"P. Kaspar, R. Kappeler, P. Friedli, H. Jaeckel","doi":"10.1109/ICIPRM.2010.5516124","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516124","url":null,"abstract":"The fabrication of air-bridge contacts for in-plane active photonic crystal devices is presented. The technology allows to access waveguides as narrow as 200nm. The main fabrication challenges described in detail are surface planarization and formation of isolation layers for contact pads. The issue of surface damage effects on dry-etched sidewalls is addressed and current measurements on narrow contacts were performed.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123811450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516245
Linghan Li, R. Takigawa, A. Higo, E. Higurashi, M. Sugiyama, Y. Nakano
The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire to InGaAsP MQW material for spontaneous light emission was successfully demonstrated afterwards.
{"title":"Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasmaassisted bonding technology","authors":"Linghan Li, R. Takigawa, A. Higo, E. Higurashi, M. Sugiyama, Y. Nakano","doi":"10.1109/ICIPRM.2010.5516245","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516245","url":null,"abstract":"The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire to InGaAsP MQW material for spontaneous light emission was successfully demonstrated afterwards.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123817468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516068
T. Sugio, T. Aoyagi, T. Tanimura, Y. Murakami, K. Shimomura
We have demonstrated a carrier-injection-type wavelength switch composed of the straight waveguide array using GaInAs/InP MQW with linearly varying refractive index distribution fabricated by selective MOVPE.
{"title":"Switching characteristics in variable refractive-index waveguide array by carrier injection","authors":"T. Sugio, T. Aoyagi, T. Tanimura, Y. Murakami, K. Shimomura","doi":"10.1109/ICIPRM.2010.5516068","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516068","url":null,"abstract":"We have demonstrated a carrier-injection-type wavelength switch composed of the straight waveguide array using GaInAs/InP MQW with linearly varying refractive index distribution fabricated by selective MOVPE.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125574936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516120
N. Nakata, H. Sano, A. Matsutani, F. Koyama
We propose a multi-wavelength and athermal VCSEL array with thermally-actuated cantilevers. The lithography-defined cantilever structure enables on-chip multi-wavelength integration. The experiment shows the wavelength spacing of 20 nm for 2-ch VCSEL array with different cantilever lengths.
{"title":"Proposal of multi-wavelength integration of athermal GaAs VCSEL array with thermally actuated cantilever structure","authors":"N. Nakata, H. Sano, A. Matsutani, F. Koyama","doi":"10.1109/ICIPRM.2010.5516120","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516120","url":null,"abstract":"We propose a multi-wavelength and athermal VCSEL array with thermally-actuated cantilevers. The lithography-defined cantilever structure enables on-chip multi-wavelength integration. The experiment shows the wavelength spacing of 20 nm for 2-ch VCSEL array with different cantilever lengths.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128046282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515962
S. Kraus, R. Makon, I. Kallfass, R. Driad, M. Moyal, D. Ritter
We present simulations and measurements of the sensitivity of a master-slave emitter-coupled logic (ECL) latched comparator implemented in an InP/GaInAs DHBT technology. The circuit exhibited simulated and experimental sensitivities of 11.5 mV and 17 mV, respectively, at a clock rate of 20 GHz, with no preamplifier
{"title":"Sensitivity of a 20-GS/s InP DHBT latched comparator","authors":"S. Kraus, R. Makon, I. Kallfass, R. Driad, M. Moyal, D. Ritter","doi":"10.1109/ICIPRM.2010.5515962","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515962","url":null,"abstract":"We present simulations and measurements of the sensitivity of a master-slave emitter-coupled logic (ECL) latched comparator implemented in an InP/GaInAs DHBT technology. The circuit exhibited simulated and experimental sensitivities of 11.5 mV and 17 mV, respectively, at a clock rate of 20 GHz, with no preamplifier","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129945866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516112
H. Murata, Tatsuya Nishi-oka, Y. Okamura, T. Kosugi, T. Enoki
Optical control and sub-harmonic-injection-locking of a 60GHz millimeter-wave oscillator using InP-based HEMTs are reported. The oscillation frequency locking by the injection of several order sub-harmonic signals was clearly observed. In addition, the modulation of the frequency-locked 60GHz signals by the illumination of a tightly focused laser beam with intensity modulation was also demonstrated. This oscillator can lead to a key device for the base station in millimeter-wave wireless systems with optical fiber links.
{"title":"Optical control of InP-based HEMT 60GHz oscillators with sub-harmonic injection locking","authors":"H. Murata, Tatsuya Nishi-oka, Y. Okamura, T. Kosugi, T. Enoki","doi":"10.1109/ICIPRM.2010.5516112","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516112","url":null,"abstract":"Optical control and sub-harmonic-injection-locking of a 60GHz millimeter-wave oscillator using InP-based HEMTs are reported. The oscillation frequency locking by the injection of several order sub-harmonic signals was clearly observed. In addition, the modulation of the frequency-locked 60GHz signals by the illumination of a tightly focused laser beam with intensity modulation was also demonstrated. This oscillator can lead to a key device for the base station in millimeter-wave wireless systems with optical fiber links.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124012515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516064
S. Fujimoto, Y. Ueda, K. Kambayashi, K. Utaka
We proposed and analyzed the 1×2 cross-point optical switch with mode-spot modulation in multi-mode interference (MMI) waveguide and 45° total internal reflection (TIR) mirror. It is suitable for crossbar switch fabric and expected some significant switching characteristics for large scale interconnection. As a result, 90° redirection switching is confirmed using FDTD method.
{"title":"Proposal of InAlGaAs/InAlAs/InP 1×2 cross-point optical switch with mode-spot modulation MMI waveguide and 45° TIR mirror","authors":"S. Fujimoto, Y. Ueda, K. Kambayashi, K. Utaka","doi":"10.1109/ICIPRM.2010.5516064","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516064","url":null,"abstract":"We proposed and analyzed the 1×2 cross-point optical switch with mode-spot modulation in multi-mode interference (MMI) waveguide and 45° total internal reflection (TIR) mirror. It is suitable for crossbar switch fabric and expected some significant switching characteristics for large scale interconnection. As a result, 90° redirection switching is confirmed using FDTD method.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115747406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516337
J. Lin, L. Chou, Hao-Hsiung Lin
The competition behavior between two Group V atoms is significant in the epitaxy growth of III-V-V compounds. We have developed a combination for the precursor state and the associated thermodynamic model in order to describe the competition behavior between Sb and As atoms during the pseudomorphic growth of GaAsSb/GaAs multiple quantum wells (MQWs) on GaAs (100) substrates by gas-source molecular-beam epitaxy (GSMBE). The strain-induced incorporation coefficient due to lattice mismatch between the growing film and substrate is also taken into account.
{"title":"The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy","authors":"J. Lin, L. Chou, Hao-Hsiung Lin","doi":"10.1109/ICIPRM.2010.5516337","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516337","url":null,"abstract":"The competition behavior between two Group V atoms is significant in the epitaxy growth of III-V-V compounds. We have developed a combination for the precursor state and the associated thermodynamic model in order to describe the competition behavior between Sb and As atoms during the pseudomorphic growth of GaAsSb/GaAs multiple quantum wells (MQWs) on GaAs (100) substrates by gas-source molecular-beam epitaxy (GSMBE). The strain-induced incorporation coefficient due to lattice mismatch between the growing film and substrate is also taken into account.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127054410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516353
F. Kawamura, T. Taniguchi
Nano-scale cubic-GaN particles were successfully synthesized using the Na flux method under about 500 atm with a belt-type ultra-high pressure apparatus. High pressure nitrogen gas of about 500 atm was sealed in the ultra-high pressure apparatus, which enabled the dissolution of pressurized nitrogen gas into a Ga-Na melt at 500°C without a compressor. In contrast, the conventional Na flux method is carried out under a pressure of 150 atm, the maximum pressure of a nitrogen gas cylinder. A characteristic feature of the process used herein is that the high-pressure reaction gas is dissolved into a flux within the ultra-high pressure apparatus. The c-GaN nanoparticles obtained by this method show excellent crystallinity and a low mixing ratio of hexagonal-GaN, and thus the method solves two common problems in the synthesis of c-GaN.
{"title":"Synthesis of cubic-GaN nanoparticles using the Na flux method: A novel use for the ultra-high pressure apparatus","authors":"F. Kawamura, T. Taniguchi","doi":"10.1109/ICIPRM.2010.5516353","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516353","url":null,"abstract":"Nano-scale cubic-GaN particles were successfully synthesized using the Na flux method under about 500 atm with a belt-type ultra-high pressure apparatus. High pressure nitrogen gas of about 500 atm was sealed in the ultra-high pressure apparatus, which enabled the dissolution of pressurized nitrogen gas into a Ga-Na melt at 500°C without a compressor. In contrast, the conventional Na flux method is carried out under a pressure of 150 atm, the maximum pressure of a nitrogen gas cylinder. A characteristic feature of the process used herein is that the high-pressure reaction gas is dissolved into a flux within the ultra-high pressure apparatus. The c-GaN nanoparticles obtained by this method show excellent crystallinity and a low mixing ratio of hexagonal-GaN, and thus the method solves two common problems in the synthesis of c-GaN.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"110 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114113651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516006
W. Ha, Z. Griffith, Daehyun Kim, Peter Chen, M. Urteaga, B. Brar
We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35nm Lg device showed RF figures-of-merit of 533 GHz fτ and 343 GHz fmax. After full circuit processing, encapsulated in BCB, a 35nm Lg, 2×20um Wg mHEMT showed 387GHz fτ, 580GHz fmax. Four-inch wafer mapping shows excellent device uniformity and yield. We also report a broadband (206–294GHz) 3-stage G-, H-band common-source amplifier having a nominal S21 mid-band gain of 11–16dB employing thin-film microstrip wiring.
{"title":"High performance InP mHEMTs on GaAs substrate with multiple interconnect layers","authors":"W. Ha, Z. Griffith, Daehyun Kim, Peter Chen, M. Urteaga, B. Brar","doi":"10.1109/ICIPRM.2010.5516006","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516006","url":null,"abstract":"We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35nm L<inf>g</inf> device showed RF figures-of-merit of 533 GHz f<inf>τ</inf> and 343 GHz f<inf>max</inf>. After full circuit processing, encapsulated in BCB, a 35nm L<inf>g</inf>, 2×20um W<inf>g</inf> mHEMT showed 387GHz f<inf>τ</inf>, 580GHz f<inf>max</inf>. Four-inch wafer mapping shows excellent device uniformity and yield. We also report a broadband (206–294GHz) 3-stage G-, H-band common-source amplifier having a nominal S<inf>21</inf> mid-band gain of 11–16dB employing thin-film microstrip wiring.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121457971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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