Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516168
K. Shimomura, Y. Suzuki, Y. Saito, F. Kawashima
InAs/InP QDs broadband LED more than 450 nm spectrum width was successfully demonstrated. The broadband spectrum was obtained from the height controlled double-cap procedure and strain controlled buffer layer fabricated by the selective MOVPE technique.
{"title":"InAs/InP QDs broadband LED using selective MOVPE growth and double-cap procedure","authors":"K. Shimomura, Y. Suzuki, Y. Saito, F. Kawashima","doi":"10.1109/ICIPRM.2010.5516168","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516168","url":null,"abstract":"InAs/InP QDs broadband LED more than 450 nm spectrum width was successfully demonstrated. The broadband spectrum was obtained from the height controlled double-cap procedure and strain controlled buffer layer fabricated by the selective MOVPE technique.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130395485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515910
M. Sugiyama
Fundamental aspects in the selective-area metal-organic vapor-phase epitaxy (MOVPE) of III-V semiconductors are presented in this paper, with an emphasis on the role of vapor-phase diffusion of a group-III precursor, which plays the dominant role for substantial modulation of an effective bandgap around wider (>100 μm) masks and is a characteristic of MOVPE that is operated close to atmospheric pressure. A single parameter, D/ks (vapor-phase mass diffusivity / surface incorporation rate coefficient), determines modulation of both thickness and composition of a layer. The value of D/ks can be regarded as an effective lateral diffusion length of a group-III precursor, and the value of ks can be decoupled from D/ks, providing insight to surface reaction kinetics of MOVPE. Coupling with reactor-scale distributions provides unique basis for the discussion of comprehensive reaction mechanism. The values of ks will be presented for basic materials composing InGaAsP system. Luminescence wavelength from multiple quantum wells (MQWs) around a given mask pattern can be simulated precisely based on a simple diffusion/reaction model and it is applicable to monolithic integration of devices using selective-area growth of InGaAsP-related materials. The same framework can be applied to III-nitride materials, and ks values for GaN growth have been obtained. Visible luminescence from InGaN/GaN MQWs on a patterned GaN template was red-shifted according to the mask width, for which only the thickness modulation of the InGaN wells has been suggested to be the governing mechanism.
{"title":"Selective area growth of III-V semiconductors: From fundamental aspects to device structures","authors":"M. Sugiyama","doi":"10.1109/ICIPRM.2010.5515910","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515910","url":null,"abstract":"Fundamental aspects in the selective-area metal-organic vapor-phase epitaxy (MOVPE) of III-V semiconductors are presented in this paper, with an emphasis on the role of vapor-phase diffusion of a group-III precursor, which plays the dominant role for substantial modulation of an effective bandgap around wider (>100 μm) masks and is a characteristic of MOVPE that is operated close to atmospheric pressure. A single parameter, D/ks (vapor-phase mass diffusivity / surface incorporation rate coefficient), determines modulation of both thickness and composition of a layer. The value of D/ks can be regarded as an effective lateral diffusion length of a group-III precursor, and the value of ks can be decoupled from D/ks, providing insight to surface reaction kinetics of MOVPE. Coupling with reactor-scale distributions provides unique basis for the discussion of comprehensive reaction mechanism. The values of ks will be presented for basic materials composing InGaAsP system. Luminescence wavelength from multiple quantum wells (MQWs) around a given mask pattern can be simulated precisely based on a simple diffusion/reaction model and it is applicable to monolithic integration of devices using selective-area growth of InGaAsP-related materials. The same framework can be applied to III-nitride materials, and ks values for GaN growth have been obtained. Visible luminescence from InGaN/GaN MQWs on a patterned GaN template was red-shifted according to the mask width, for which only the thickness modulation of the InGaN wells has been suggested to be the governing mechanism.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132047878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516397
D. Saguatti, A. Chini, G. Verzellesi, M. Isa, K. Ian, M. Missous
High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF measurements from the baseline InP HEMT technology into which the field plate is being incorporated. Simulations have then been used to design field-plate structures with optimal length and passivation thickness.
{"title":"TCAD optimization of field-plated InAlAs-InGaAs HEMTs","authors":"D. Saguatti, A. Chini, G. Verzellesi, M. Isa, K. Ian, M. Missous","doi":"10.1109/ICIPRM.2010.5516397","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516397","url":null,"abstract":"High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF measurements from the baseline InP HEMT technology into which the field plate is being incorporated. Simulations have then been used to design field-plate structures with optimal length and passivation thickness.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133503927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Sub 50 nm InP HEMT with fT = 586 GHz and amplifier circuit gain at 390 GHz for sub-millimeter wave applications","authors":"R. Lai, X. Mei, S. Sarkozy, W. Yoshida, P. Liu, J. Lee, M. Lange, V. Radisic, K. Leong, W. Deal","doi":"10.1109/ICIPRM.2010.5516002","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516002","url":null,"abstract":"In this paper, we report recent advances on sub-50 nm InP HEMT have achieved new benchmarks of 586 GHz fT and 7 dB amplifier circuit gain at 390 GHz","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133533086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516253
H. Ho, Ta Fan, Geng-Ying Liau, Heng-Kuang Lin, P. Chiu, J. Chyi, C. Ko, T. Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, C. Wann
Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics. A 2µm-gate-length depletion-mode InAs n-channel MOS-MODFET shows a maximum drain current of 270 mA/mm, a peak transconductance of 189 mS/mm, and a low output conductance of 18 mS/mm in dc characteristics, and a maximum current-gain cut-off frequency of 14.5 GHz and a maximum oscillation frequency of 24.0 GHz in rf performances. The InAs-channel MOS-MODFET presents potentials for further developing complementary circuit devices.
{"title":"DC and RF characteristics of InAs-channel MOS-MODFETs using PECVD SiO2 as gate dielectrics","authors":"H. Ho, Ta Fan, Geng-Ying Liau, Heng-Kuang Lin, P. Chiu, J. Chyi, C. Ko, T. Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, C. Wann","doi":"10.1109/ICIPRM.2010.5516253","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516253","url":null,"abstract":"Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics. A 2µm-gate-length depletion-mode InAs n-channel MOS-MODFET shows a maximum drain current of 270 mA/mm, a peak transconductance of 189 mS/mm, and a low output conductance of 18 mS/mm in dc characteristics, and a maximum current-gain cut-off frequency of 14.5 GHz and a maximum oscillation frequency of 24.0 GHz in rf performances. The InAs-channel MOS-MODFET presents potentials for further developing complementary circuit devices.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133735129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516221
A. Marshall, P. Vines, S. Xie, J. David, C. H. Tan
We report the avalanche properties of InAs avalanche photodiodes (APDs), extracted from avalanche gain and excess noise measurements performed under pure electron and pure hole injections, and from Monte Carlo simulations. For a given avalanche width electron initiated gain was found to be significantly higher than conventional InP and Si APDs. Hole initiated multiplication was negligible confirming the electron only multiplication process within the field range covered. Excess noise measurements showed the excess noise factors of less than 2, providing further evidence of the ideal avalanche properties in InAs. Monte Carlo simulations performed provided good agreement to experimental results.
{"title":"High gain InAs electron-avalanche photodiodes for optical communication","authors":"A. Marshall, P. Vines, S. Xie, J. David, C. H. Tan","doi":"10.1109/ICIPRM.2010.5516221","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516221","url":null,"abstract":"We report the avalanche properties of InAs avalanche photodiodes (APDs), extracted from avalanche gain and excess noise measurements performed under pure electron and pure hole injections, and from Monte Carlo simulations. For a given avalanche width electron initiated gain was found to be significantly higher than conventional InP and Si APDs. Hole initiated multiplication was negligible confirming the electron only multiplication process within the field range covered. Excess noise measurements showed the excess noise factors of less than 2, providing further evidence of the ideal avalanche properties in InAs. Monte Carlo simulations performed provided good agreement to experimental results.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133973260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516229
L. Moerl, W. Passenberg, M. Ferstl, D. Schmidt, Ruiyong Zhang, T. Aalto, M. Harjanne, M. Kapulainen, S. Ylinen
Vertical hybrid integration of photodiodes (PD) and silicon-on-insulator (SOI) waveguides has been investigated. To this end, InP-based planar detectors were used onto which a polymer prism was formed to turn the light beam into the vertical direction. The photodiodes were flip-chip mounted onto a SOI waveguide platform using thermo-compression bonding. Comparable high responsivity of around 0.75 A/W was obtained when light was coupled directly into the prism as well as via a SOI waveguide. The responsivity for SOI integrated PDs was found to depend only to a minor extent on input wavelength and polarization. PD bandwidth of up to 10 GHz was measured. The investigated optical coupling scheme proved to work well also when integrating a PD with an array of ten SOI waveguides which are combined with a star coupler.
{"title":"Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism","authors":"L. Moerl, W. Passenberg, M. Ferstl, D. Schmidt, Ruiyong Zhang, T. Aalto, M. Harjanne, M. Kapulainen, S. Ylinen","doi":"10.1109/ICIPRM.2010.5516229","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516229","url":null,"abstract":"Vertical hybrid integration of photodiodes (PD) and silicon-on-insulator (SOI) waveguides has been investigated. To this end, InP-based planar detectors were used onto which a polymer prism was formed to turn the light beam into the vertical direction. The photodiodes were flip-chip mounted onto a SOI waveguide platform using thermo-compression bonding. Comparable high responsivity of around 0.75 A/W was obtained when light was coupled directly into the prism as well as via a SOI waveguide. The responsivity for SOI integrated PDs was found to depend only to a minor extent on input wavelength and polarization. PD bandwidth of up to 10 GHz was measured. The investigated optical coupling scheme proved to work well also when integrating a PD with an array of ten SOI waveguides which are combined with a star coupler.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133287346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515938
K. Kinoshita, S. Yoda, H. Aoki, T. Hosokawa, S. Yamamoto, M. Matsushima, M. Arai, Y. Kawaguchi, Y. Kondo, F. Kano
We have succeeded in increasing size of InxGa1−xAs (x: 0.1–0.13) platy single crystals to 30 ×30 mm2 in surface area for mass production of laser diodes. Key points are to suppress convection in a melt and to keep constant temperature gradient for obtaining homogeneous crystals. Grown crystals have enough quality as substrates for 1.3 μm laser diodes. Fabricated laser diodes on these substrates were evaluated by measuring lasing characteristics at various temperatures and by measuring bit error rate for transmission through a single mode fiber up to 20 km. Lasers showed high temperature stability and error free transmission and showed the merit of ternary substrates.
{"title":"Growth of large platy InGaAs crystals and fabrication of semiconductor laser diodes","authors":"K. Kinoshita, S. Yoda, H. Aoki, T. Hosokawa, S. Yamamoto, M. Matsushima, M. Arai, Y. Kawaguchi, Y. Kondo, F. Kano","doi":"10.1109/ICIPRM.2010.5515938","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515938","url":null,"abstract":"We have succeeded in increasing size of InxGa1−xAs (x: 0.1–0.13) platy single crystals to 30 ×30 mm2 in surface area for mass production of laser diodes. Key points are to suppress convection in a melt and to keep constant temperature gradient for obtaining homogeneous crystals. Grown crystals have enough quality as substrates for 1.3 μm laser diodes. Fabricated laser diodes on these substrates were evaluated by measuring lasing characteristics at various temperatures and by measuring bit error rate for transmission through a single mode fiber up to 20 km. Lasers showed high temperature stability and error free transmission and showed the merit of ternary substrates.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133313902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516027
D. Ehrentraut, T. Fukuda
The growth of bulk gallium nitride crystals can only be made from the vapor or liquid phase. The ammonothermal method is emerging as a potential alternative to the hydride vapor phase growth method. A short outline over the technology and some of the recent results from the acidic ammonothermal growth of GaN are presented.
{"title":"Ammonothermal technology for bulk gallium nitride crystals","authors":"D. Ehrentraut, T. Fukuda","doi":"10.1109/ICIPRM.2010.5516027","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516027","url":null,"abstract":"The growth of bulk gallium nitride crystals can only be made from the vapor or liquid phase. The ammonothermal method is emerging as a potential alternative to the hydride vapor phase growth method. A short outline over the technology and some of the recent results from the acidic ammonothermal growth of GaN are presented.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130597401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516385
Jongwon Lee, Sunkyu Choi, Kyounghoon Yang
A low-power 4:1 multiplexer (MUX) IC using Resonant Tunneling Diodes (RTDs) is proposed and fabricated. The proposed 4:1 MUX topology consists of two RTD-based 2:1 MUX ICs and a 2:1 selector IC. By using the unique NDR (Negative Differential Resistance) characteristics of the RTD, the proposed IC has achieved a significantly reduced dc power consumption compared to the conventional III-V transistor-based topology. The fabricated IC shows 15 Gb/s operation with dc power consumption of 80 mW.
{"title":"A new low-power RTD-based 4:1 multiplexer IC using an InP RTD/HBT MMIC technoligy","authors":"Jongwon Lee, Sunkyu Choi, Kyounghoon Yang","doi":"10.1109/ICIPRM.2010.5516385","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516385","url":null,"abstract":"A low-power 4:1 multiplexer (MUX) IC using Resonant Tunneling Diodes (RTDs) is proposed and fabricated. The proposed 4:1 MUX topology consists of two RTD-based 2:1 MUX ICs and a 2:1 selector IC. By using the unique NDR (Negative Differential Resistance) characteristics of the RTD, the proposed IC has achieved a significantly reduced dc power consumption compared to the conventional III-V transistor-based topology. The fabricated IC shows 15 Gb/s operation with dc power consumption of 80 mW.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114941284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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